IGBT (Insulated Gate Bipolar Translator) parallel current sharing assembly

By using the Zener diode and high-voltage film capacitor in the IGBT parallel current sharing component, combined with the common-mode inductor and heat dissipation structure, the problems of current imbalance and synchronization in IGBT parallel drive are solved, thereby improving the system reliability and stability.

CN224401511UActive Publication Date: 2026-06-23LUOYANG JIASHENG NEW ENERGY TECH CO LTD
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Patent Information

Application Number
CN202520852795.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-30
Publication Date
2026-06-23
Estimated Expiration
2035-04-30

AI Technical Summary

Technical Problem

In parallel IGBT driving, the turn-on delay is large and the current consistency is poor, which leads to device damage and reduced system reliability.

Method used

The IGBT parallel current sharing component, including Zener diodes and high-voltage film capacitors, is adopted. The synchronous startup of the IGBT module is achieved by regulating the current and using a common-mode inductor. Combined with heat sinks and auxiliary components, uniform installation and efficient heat dissipation are ensured.

Benefits of technology

It achieves current balancing and synchronization among IGBT modules, improves drive reliability and current consistency, reduces the possibility of heat buildup in IGBT modules, and ensures stable operation.

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Abstract

The utility model discloses an IGBT parallel current sharing assembly. The IGBT parallel current sharing assembly comprises an installation structure and at least one IGBT module. The installation structure comprises a heat dissipation piece, and a plurality of heat conduction pieces are evenly arranged on the heat dissipation piece. The IGBT modules are arranged on the heat conduction part in a one-to-one correspondence mode, each IGBT module comprises two IGBT modules which are connected in parallel, a diode and a capacitor are connected between a collector electrode and an emitter electrode of each IGBT module, a negative electrode of each diode is connected with the collector electrode of the corresponding IGBT module, a positive electrode of each diode is connected with a first end of the corresponding capacitor, and a second end of the corresponding capacitor is connected with the emitter electrode of the corresponding IGBT module. The problems that in the prior art, when a plurality of IGBTs are used in parallel, the turn-on delay is large, and the current consistency is poor are solved.
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