Memory model (3D stacked NAND)
CN310046776SActive Publication Date: 2026-06-23冯翔
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Patent Information
- Application Number
- CN202530715421.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-04
- Publication Date
- 2026-06-23
- Estimated Expiration
- 2040-12-04
Smart Images
Figure 000005_ABST
Abstract
1. Name of the product in this design: Memory Model (3D Stacked NAND). 2. Purpose of this design: For use in 3D stacked NAND memory models. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.
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