Semiconductor devices, electronic equipment and systems

The semiconductor device with a laminated structure and specific electrodes addresses the challenges of crystallinity and electrical properties in r-GeO2 devices, enhancing performance in high-voltage and high-current applications.

JP2026091259APending Publication Date: 2026-06-03PATENTIX INC
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
PATENTIX INC
Filing Date
2025-11-11
Publication Date
2026-06-03

AI Technical Summary

Technical Problem

Existing methods for manufacturing rutile-structured germanium dioxide (r-GeO2) semiconductor devices face challenges in achieving high crystallinity, controlling composition, and ensuring excellent electrical properties, particularly in laminated structures and Schottky barrier diodes, limiting their industrial applicability.

Method used

A semiconductor device with a laminated structure comprising a second semiconductor layer with the same crystal structure as the first, using a Schottky electrode and an ohmic electrode, formed through a mist CVD apparatus with a guide partition wall, ensuring excellent crystallinity and electrical characteristics.

Benefits of technology

The semiconductor device achieves improved crystallinity and electrical properties, enabling better control over doping and superior performance in high-voltage and high-current applications, such as Schottky barrier diodes.

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Abstract

To provide semiconductor devices, electronic devices, and systems with excellent electrical properties useful for power devices and the like. [Solution] A semiconductor device comprising a laminated structure in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer on a first semiconductor layer made of a crystalline oxide mainly composed of germanium or a mixed crystal thereof, further comprising a Schottky electrode that is Schottky bonded to the second semiconductor layer and an ohmic electrode that is ohmic bonded to the first semiconductor layer, is applied, for example, to a power device.
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Citation Information

Patent Citations

  • Oxide semiconductor and semiconductor device

    WO2023008452A1

  • Oxide crystal, crystalline oxide film, crystalline laminated structure, and semiconductor device

    WO2023008453A1

  • Crystalline oxide film and semiconductor device

    WO2023008454A1