Photoresist development with organic vapor

Photopatterned metal-containing resists using organic vapors address the limitations of conventional EUV photolithography by enhancing resolution and etch resistance, preventing line collapse, and improving throughput through dry development.

TWI933845BActive Publication Date: 2026-08-01LAM RES CORP
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Patent Information

Application Number
TW110145602
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-12-08
Filing Date
2021-12-07
Publication Date
2026-08-01
Estimated Expiration
2041-12-06

AI Technical Summary

Technical Problem

Conventional photolithography processes face challenges in achieving small feature sizes due to the limitations of light wavelengths and the use of organic chemical amplifying resists, which result in low absorption coefficients and pattern collapse, especially in extreme ultraviolet (EUV) photolithography.

Method used

The use of photopatterned metal-containing resists developed using organic vapors, such as trifluoroacetic acid, to selectively remove unexposed portions and form a resist mask through dry development, eliminating the need for wet development and reducing line collapse.

Benefits of technology

This method enhances resolution and etch resistance, improving the formation of small features by preventing line collapse and increasing throughput while maintaining high selectivity and adjustability.

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Abstract

The development of resists can be used, for example, to form patterned masks against a high-resolution patterned background. Development can be performed using organic vapors (e.g., carboxylic acids). In some embodiments, the organic vapor is trifluoroacetic acid. In some embodiments, the organic vapor is hexafluoroacetate. Metal-containing resist films (e.g., EUV-sensitive organometallic oxides) can be deposited on semiconductor substrates using dry or wet deposition techniques. The metal-containing resist films on the semiconductor substrates can be developed using organic vapors, or residues of metal-containing resist material formed on the surface of the process chamber can be removed using organic vapors.
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