Branched compositions for lithographic patterning cross-reference to related applications
Graft polymers address component leaching, pattern collapse, and optical reflection in photolithography by forming in-situ barriers and anti-reflective coatings, enhancing process compatibility and reducing environmental risks associated with PFAS.
Patent Information
- Application Number
- PCT/US2025/046155
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-11-16
- Filing Date
- 2025-09-12
- Publication Date
- 2026-03-19
AI Technical Summary
The semiconductor industry faces challenges in photolithography due to component leaching, pattern collapse, and optical reflection, which are exacerbated by the use of per- and polyfluoroalkyl substances (PFAS) in current solutions, posing environmental and health risks.
The use of graft polymers, including acid-labile polymers and photoacid generators, forms an in-situ barrier to prevent component leaching and reduces pattern collapse, while also serving as a top anti-reflective coating to minimize optical reflections.
The graft polymers effectively reduce surface contamination, enhance compatibility with immersion lithography, and improve pattern fidelity by minimizing leaching and reflections, thus supporting advanced photolithography processes without PFAS.