Method for plasma assisted film deposition

A plasma and thin film deposition technology, used in gaseous chemical plating, coating, metal material coating process, etc., can solve practical application and operation complexity, monitoring and quantitative analysis of dissociated gas composition changes, affecting accuracy And other issues

CN101413115BInactive Publication Date: 2010-08-25IND TECH RES INST
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2010-08-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a film deposition system through the assistance of plasma and a method thereof. The system mainly consists of a plasma film deposition device and a plasma process monitoring device; the plasma film deposition device can be used for inputting pulse power and process reaction gas; the pulse power and process reaction gas act to produce an active species in reaction gas for a plasma discharge and dissociation process so as to carry out a film deposition process; the plasma process monitoring device comprises a plasma composition optical emission spectroscopy and a pulse plasma modulation program device; the value of spectral intensity of the active species in a plasma composition is measured through the plasma composition optical emission spectroscopy; and the spectral intensity ratio between the active species is calculated through pulse plasma modulation program device, so as to modulate the proper action time and power of the pulse power plasma, obtain high sedimentation rate within the sedimentation range of microcrystal silicon and master the optimal sedimentation quality of the film in real time.
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Description

technical field

[0001] The present invention relates to a plasma-assisted thin film deposition system and method, in particular to a plasma composition optical emission spectrometer to monitor the spectral intensity between active species dissociated by pulsed plasma, and to adjust the program device through the plasma A plasma-assisted thin film deposition system and method that calculates the spectral intensity ratio between active species, actively modulates pulse power supply parameters, obtains a high deposition rate within the range of microcrystalline silicon deposition, and controls the best film deposition quality in real time. Background technique

[0002] Press, microcrystalline silicon (μc-Si) thin films can be applied to tandem silicon thin film solar cell structure, which has the advantage of improving the photoelectric conversion efficiency of thin film solar cells; usually by plasma-assisted vapor deposition (PECVD) ) technology can obtain microcrystalline si...

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Embodiment Construction

[0067] In order to have a further understanding and recognition of the structure, purpose and effect of the present invention, the detailed description is as follows in conjunction with the accompanying drawings.

[0068] The technical means and functions used to achieve the purpose of the present invention will be described below with reference to the accompanying drawings, and the embodiments listed in the following drawings are only for auxiliary illustration, and the technical means of the present invention are not limited to the listed accompanying drawings.

[0069] Please refer to FIG. 2 , the plasma-assisted thin film deposition system 10 provided by the present invention is mainly composed of a plasma thin film deposition device 20 and a plasma process monitoring device 30 .

[0070] The plasma thin film deposition device 20 can be a plasma-assisted chemical vapor deposition device, as shown in FIG. The body 21 is provided with an upper electrode 22 and a lower electr...