A UWB Low Noise Monolithic Integrated Amplifier

Abstract

The invention discloses an ultra-wide-band low-noise singlechip integrated amplifier. The ultra-wide-band low-noise singlechip integrated amplifier comprises a primary amplifying circuit, a secondary amplifying circuit and a tertiary amplifying circuit, wherein the primary amplifying circuit comprises a first triode transistor; the secondary amplifying circuit comprises a second triode transistor and a third triode transistor; the tertiary amplifying circuit comprises a control current inputting end, a fourth resistor, a first filtering capacitor and a fourth triode transistor; the control current inputting end is connected to a base electrode of the third triode transistor through the fourth resistor; the fourth resistor and the base electrode of the third triode transistor are simultaneously grounded through the first filtering capacitor; an emitting electrode of the third triode transistor is connected to a base electrode of the fourth triode transistor; and a collector electrode of the fourth triode transistor is a signal outputting end of the tertiary amplifying circuit. By using the ultra-wide-band low-noise singlechip integrated amplifier, the service life of a battery is greatly prolonged, the parasitic inductance is greatly reduced, high-frequency gain is increased, and a bandwidth range is broadened.

Description

technical field

[0001] The invention relates to an integrated amplifier, in particular to an ultra-wideband low-noise monolithic integrated amplifier. Background technique

[0002] In the face of tight wireless communication resources, since the FCC (Federal Communications Commission of the United States) allocated the 3.1GHz-10.6GHz frequency band to ultra-wideband UWB (Ultra-Wide Band) and approved ultra-wideband UWB civilian use, wireless personal area network (WPAN) ), home network connection and short-range radar and other fields have achieved rapid development, and thus have broad market application prospects.

[0003] At present, there are two main methods of ultra-wideband communication. One is pulse ultra-wideband, which uses short-time impact pulses as information carriers, and carries information through PPM, PAM, etc. Modulation at the nanosecond level) to obtain very wide bandwidth; the other is multi-band ultra-wideband, which carries information through MB-OF...

Examples

Embodiment Construction

[0022] The present invention will be further described below in conjunction with accompanying drawing.

[0023] see figure 1 , an ultra-broadband low-noise monolithic integrated amplifier of the present invention includes a first-stage amplifying circuit and a second-stage amplifying circuit, the first-stage amplifying circuit includes a first transistor HBT1, and the second-stage amplifying circuit includes a second transistor HBT2 and the third transistor HBT3, the present invention also includes a third-stage amplifying circuit, the third-stage amplifying circuit includes a control current input terminal Control circuit, a fourth resistor R4, a first filter capacitor C1 and a fourth transistor HBT4.

[0024] The base of the first transistor HBT1 is connected to the signal input terminal, and the collector of the first transistor HBT1 is the signal output terminal of the first-stage amplifying circuit.

[0025] The collector of the first transistor HBT1 is connected with th...

technical field

[0001] The invention relates to an integrated amplifier, in particular to an ultra-wideband low-noise monolithic integrated amplifier. Background technique

[0002] In the face of tight wireless communication resources, since the FCC (Federal Communications Commission of the United States) allocated the 3.1GHz-10.6GHz frequency band to ultra-wideband UWB (Ultra-Wide Band) and approved ultra-wideband UWB civilian use, wireless personal area network (WPAN) ), home network connection and short-range radar and other fields have achieved rapid development, and thus have broad market application prospects.

[0003] At present, there are two main methods of ultra-wideband communication. One is pulse ultra-wideband, which uses short-time impact pulses as information carriers, and carries information through PPM, PAM, etc. Modulation at the nanosecond level) to obtain very wide bandwidth; the other is multi-band ultra-wideband, which carries information through MB-OF...

Examples

Embodiment Construction

[0022] The present invention will be further described below in conjunction with accompanying drawing.

[0023] see figure 1 , an ultra-broadband low-noise monolithic integrated amplifier of the present invention includes a first-stage amplifying circuit and a second-stage amplifying circuit, the first-stage amplifying circuit includes a first transistor HBT1, and the second-stage amplifying circuit includes a second transistor HBT2 and the third transistor HBT3, the present invention also includes a third-stage amplifying circuit, the third-stage amplifying circuit includes a control current input terminal Control circuit, a fourth resistor R4, a first filter capacitor C1 and a fourth transistor HBT4.

[0024] The base of the first transistor HBT1 is connected to the signal input terminal, and the collector of the first transistor HBT1 is the signal output terminal of the first-stage amplifying circuit.

[0025] The collector of the first transistor HBT1 is connected with th...

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