Ultra-small high-sensitivity magnetic sensor

CN110753850B8Active Publication Date: 2022-04-01ASAHI INTECC CO LTD
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Patent Information

Application Number
CN201880039654.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2017-07-21
Filing Date
2018-05-22
Publication Date
2022-04-01
Estimated Expiration
2038-05-22

AI Technical Summary

Technical Problem

It is difficult to miniaturize the GSR sensor while maintaining detection sensitivity with existing technology, especially in terms of thickness reduction.

Method used

By forming a substrate film on the insulating protective film of the ASIC, and providing a magnetic conductor groove on the substrate film, a GSR element consisting of a magnetic conductor and a detection coil surrounding the magnetic conductor is formed, and a GSR element is formed that penetrates the substrate film and the insulating protective film. Through-hole bonding reduces electrode size to achieve thinning and ultra-miniaturization of GSR sensors.

Benefits of technology

The GSR sensor has been made thinner and ultra-miniaturized while maintaining high sensitivity. It can be installed in a device introduced into a living body and is suitable for ultra-small and high-performance applications.

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Abstract

In order to provide an ultra-small, highly sensitive magnetic sensor consisting of a magnetic field detection element integrally formed with an ASIC, the present invention sets the thickness of the substrate film (10b) formed on the upper surface of the insulating protective film (10a) of the ASIC (4) to 1 to 20 μm, and provides a trench (11) with a depth of 1 to 10 μm on the substrate film (10b). An element (1) is formed along the surface of the trench (11) in such a way that part or all of the coil is embedded. The electrode of the element (1) is electrically connected to the electrode of the ASIC (4) through an electrode joint portion that penetrates the insulating protective film (10a) and the substrate film (10b). The thickness of the element portion from the surface of the ASIC (4) is set to 20 μm or less.
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