Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method. The efficiency of supercritical drying treatment is sought. The substrate processing device disclosed in the present invention is a substrate processing device that uses a processing fluid in a supercritical state to perform a drying treatment to dry a substrate, and the substrate processing device includes a processing container and a plurality of holding parts. The processing container is a container for performing drying treatment. The plurality of holding parts respectively hold different substrates inside the processing container.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] Conventionally, as a technique for suppressing pattern collapse and removing moisture remaining on the surface of a substrate, a supercritical drying technique for drying a substrate using a supercritical fluid obtained under high pressure is known.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2011-009299 Summary of the invention

[0004] Problem that the invention aims to solve

[0005] The present disclosure provides a technology for improving the efficiency of a supercritical drying process.

[0006] Solutions for solving problems

[0007] A substrate processing device in one form of the present disclosure is a substrate processing device that uses a processing fluid in a supercritical state to perform a drying process to dry a substrate, and the substrate processing device includes a processing container and a plurality of holding parts. The processing container is a container for performing the drying process. The plurality of holding parts respectively hold different substrates inside the processing container.

[0008] Effects of the Invention

[0009] According to the present disclosure, it is possible to improve the efficiency of supercritical drying treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a schematic cross-sectional view of the substrate processing system according to the first embodiment as viewed from above.

[0011] Figure 2 This is a flowchart showing a series of steps of substrate processing executed in the substrate processing system according to the first embodiment.

[0012] Figure 3 It is a diagram showing a configuration example of a liquid processing unit.

[0013] Figure 4 It is a schematic cross-sectional view showing the structure of the drying unit according to the first embodiment.

[0014] Figure 5 This is a schematic cross-sectional view showing an example of a state in which a plurality of wafers are stored in a processing container.

[0015] Figure 6 This is a schematic cross-sectional view showing an example of a flow path of a processing fluid in a processing space.

[0016] Figure 7 It is a schematic cross-sectional view showing the structure of a drying unit according to the second embodiment.

[0017] Figure 8 It is a schematic cross-sectional view showing the structure of a drying unit according to a third embodiment.

[0018] Fig. 9 It is a schematic cross-sectional view showing the structure of a drying unit according to a fourth embodiment.

[0019] Fig.10 It is a schematic cross-sectional view showing the structure of a drying unit according to a fifth embodiment.

[0020] Fig.11 It is a schematic cross-sectional view showing the structure of a drying unit according to the sixth embodiment.

[0021] Fig.12 It is a schematic plan view showing the structure of a holding portion according to the sixth embodiment.

[0022] Fig.13 It is a schematic cross-sectional view showing the structure of a drying unit according to the seventh embodiment. DETAILED DESCRIPTION

[0023] Hereinafter, the form (hereinafter referred to as "embodiment") for implementing the substrate processing apparatus and substrate processing method disclosed herein will be described in detail with reference to the accompanying drawings. In addition, the substrate processing apparatus and substrate processing method disclosed herein are not limited to the embodiments. In addition, the various embodiments can be appropriately combined within the scope that the processing contents are not contradictory. In addition, in the following embodiments, the same reference numerals are marked on the same parts, and repeated descriptions are omitted.

[0024] (First embodiment)

[0025] 〔1. Structure of substrate processing system〕

[0026] First, refer to Figure 1 The configuration of the substrate processing system according to the embodiment will be described. Figure 1 This is a schematic cross-sectional view of the substrate processing system according to the first embodiment as viewed from above. In order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0027] like Figure 1 As shown, the substrate processing system 1 includes a carrying-in / out station 2 and a processing station 3. The carrying-in / out station 2 and the processing station 3 are disposed adjacent to each other.

[0028] (About delivery station 2)

[0029] The loading and unloading station 2 includes a carrier placement unit 11 and a conveying unit 12. A plurality of carriers C storing a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal state are placed on the carrier placement unit 11.

[0030] The conveying section 12 is provided adjacent to the carrier placing section 11. Inside the conveying section 12, a conveying device 13 and a delivery section 14 are arranged.

[0031] The transport device 13 includes a wafer holding mechanism for holding the wafer W. The transport device 13 can move in the horizontal and vertical directions and rotate about a vertical axis, and transports the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0032] (About Processing Station 3)

[0033] The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a conveying module 4 and a plurality of (two in this case) processing modules 5_1 and 5_2.

[0034] (About conveying module 4)

[0035] The transport module 4 includes a transport region 15 and a transport device 16. The transport region 15 is a rectangular parallelepiped region extending along the arrangement direction of the input / output station 2 and the processing station 3 (X-axis direction), for example.

[0036] A conveying device 16 is disposed in the conveying area 15. The conveying device 16 includes a wafer holding mechanism for holding the wafer W. The conveying device 16 is capable of moving in the horizontal direction and the vertical direction and rotating about the vertical axis, and conveys the wafer W between the interface 14 and the plurality of processing modules 5 using the wafer holding mechanism.

[0037] The processing modules 5_1 and 5_2 are arranged adjacent to the conveying area 15 on both sides of the conveying area 15. Specifically, the processing module 5_1 is arranged on one side (positive Y-axis direction side) of the conveying area 15 in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the conveying station 2 and the processing station 3, and the processing module 5_2 is arranged on the other side (negative Y-axis direction side) of the conveying area 15 in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the conveying station 2 and the processing station 3.

[0038] The processing module 5_1 includes a drying unit 18_1, a supply unit 19_1, and a plurality of (here, two) liquid processing units 17a and 17b. The processing module 5_2 includes a drying unit 18_2, a supply unit 19_2, and a plurality of (here, two) liquid processing units 17c and 17d.

[0039] In the following, when the processing modules 5_1 and 5_2 are not distinguished, they are sometimes collectively referred to as "processing module 5". Similarly, the liquid processing units 17a to 17d are sometimes collectively referred to as "liquid processing unit 17", the drying units 18_1 and 18_2 are sometimes collectively referred to as "drying unit 18", and the supply units 19_1 and 19_2 are sometimes collectively referred to as "supply unit 19".

[0040] The liquid processing unit 17 performs a cleaning process for cleaning the upper surface of the wafer W as a pattern formation surface. In addition, the liquid processing unit 17 performs a liquid film forming process for forming a liquid film on the upper surface of the wafer W after the cleaning process. The structure of the liquid processing unit 17 will be described below.

[0041] The drying unit 18 performs supercritical drying on the wafer W after the liquid film forming process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film forming process into contact with the processing fluid in a supercritical state. The structure of the drying unit 18 will be described later.

[0042] The supply unit 19 supplies the treatment fluid to the drying unit 18. Specifically, the supply unit 19 includes: a supply device group including a flow meter, a flow regulator, a back pressure valve, a heater, etc.; and a housing that accommodates the supply device group. In the first embodiment, the supply unit 19 supplies CO2 as the treatment fluid to the drying unit 18.

[0043] In each processing module 5, a plurality of liquid processing units 17, drying units 18, and supply units 19 are arranged along the conveying area 15 (i.e., along the X-axis direction). Among the liquid processing units 17, drying units 18, and supply units 19, the liquid processing unit 17 is arranged at a position closest to the carrying-in and carrying-out station 2, and the supply unit 19 is arranged at a position farthest from the carrying-in and carrying-out station 2.

[0044] The drying unit 18_1 includes: a processing area 181a for performing supercritical drying processing; and a plurality of (here, two) handover areas 182a and 182b for handing over the wafer W between the conveying module 4 and the processing area 181a. In the first embodiment, the processing area 181a and the plurality of handover areas 182a and 182b are arranged along the conveying area 15. Specifically, the plurality of handover areas 182a and 182b are arranged on both sides of the processing area 181a in the X-axis direction, that is, on the negative X-axis direction side and the positive X-axis direction side of the processing area 181a.

[0045] Similarly, the drying unit 18_2 includes: a processing area 181b for performing supercritical drying processing; and a plurality of (here, two) handover areas 182c and 182d for handing over the wafer W between the conveying module 4 and the processing area 181b. In the first embodiment, the processing area 181b and the plurality of handover areas 182c and 182d are arranged along the conveying area 15. Specifically, the plurality of handover areas 182c and 182d are arranged on both sides of the processing area 181b in the X-axis direction, that is, on the negative X-axis direction side and the positive X-axis direction side of the processing area 181b.

[0046] In the following, when the drying units 18_1 and 18_2 are not distinguished, they are sometimes collectively referred to as "drying unit 18". Similarly, the processing areas 181a and 181b are sometimes collectively referred to as "processing area 181", and the handover areas 182a to 182d are sometimes collectively referred to as "handover area 182".

[0047] (For control device 6)

[0048] The substrate processing system 1 includes a control device 6 . The control device 6 is, for example, a computer, and includes a control unit 61 and a storage unit 62 .

[0049] The control unit 61 includes a microcomputer and various circuits including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, etc. The CPU of the microcomputer reads out and executes a program stored in the ROM to control the conveying devices 13 and 16, the liquid processing unit 17, the drying unit 18, and the supply unit 19.

[0050] The program may be recorded on a computer-readable recording medium or installed from the recording medium to the storage unit 62 of the control device 6. Examples of the computer-readable recording medium include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0051] The storage unit 62 can be implemented by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0052] 〔2. Substrate processing flow〕

[0053] Next, refer to Figure 2 and Figure 3A flow of a series of substrate processing in the above-mentioned substrate processing system 1 will be described. Figure 2 1 is a flowchart showing a series of steps of substrate processing performed in the substrate processing system 1 of the first embodiment. Figure 2 The series of substrate processing shown is performed under the control of the control unit 61 .

[0054] like Figure 2 As shown, in the substrate processing system 1, first, a feeding process is performed (step S101). In the feeding process, the conveying device 13 (see Figure 1 ) takes out the wafer W from the carrier C and places it on the delivery section 14. Next, the transport device 16 (see Figure 1 ) takes out the wafer W from the delivery portion 14 and sends it to the liquid processing unit 17.

[0055] Next, in the substrate processing system 1, the liquid processing unit 17 performs a cleaning process (step S102). The liquid processing unit 17 removes particles, natural oxide films, etc. from the upper surface of the wafer W by supplying various processing liquids to the upper surface of the wafer W as the pattern formation surface.

[0056] Next, in the substrate processing system 1, a liquid film forming process is performed in the liquid processing unit 17 (step S103). The liquid processing unit 17 forms a liquid film of the IPA liquid on the upper surface of the wafer W by supplying liquid IPA (hereinafter referred to as "IPA liquid") to the upper surface of the wafer W after the cleaning process.

[0057] After the wafer W after the liquid film forming process is transported by the transport device 16 to the delivery area 182 of the drying unit 18 configured in the same processing module 5, it is transported from the delivery area 182 to the processing area 181. Thereafter, in the substrate processing system 1, a supercritical drying process is performed in the processing area 181 (step S104). In the supercritical drying process, the drying unit 18 dries the wafer W after the liquid film forming process by bringing the wafer W after the liquid film forming process into contact with the processing fluid in a supercritical state.

[0058] In the first embodiment, the drying unit 18 performs supercritical drying treatment on two wafers W at the same time. Specifically, the conveying device 16 takes out the wafer W after the liquid film formation treatment from one of the two liquid processing units 17a and 17b configured in one processing module 5, such as the processing module 5_1. Then, the conveying device 16 conveys the wafer W taken out from the liquid processing unit 17a to one of the two handover areas 182a and 182b of the drying unit 18_1 configured in the same processing module 5_1. Moreover, the conveying device 16 takes out the wafer W after the liquid film formation treatment from the other liquid processing unit 17b of the two liquid processing units 17a and 17b configured in the processing module 5_1. Then, the conveying device 16 conveys the wafer W taken out from the liquid processing unit 17b to the other handover area 182b of the two handover areas 182a and 182b of the drying unit 18_1. Thereafter, the two wafers W are transported from the delivery regions 182 a and 182 b to the processing region 181 , and a supercritical drying process is performed in the processing region 181 .

[0059] In addition, the conveying device 16 may first convey the wafer W taken out from the liquid processing unit 17a arranged on the negative side of the X-axis to the handover area 182b arranged on the positive side of the X-axis. Moreover, the conveying device 16 may then convey the wafer W taken out from the liquid processing unit 17b arranged on the positive side of the X-axis to the handover area 182a arranged on the negative side of the X-axis. In the first embodiment, there is a difference in the waiting time of the two wafers W in the handover areas 182a and 182b, but by shortening the conveying distance of the wafer W to be initially conveyed as described above, the difference in the waiting time can be absorbed.

[0060] Next, in the substrate processing system 1, a delivery process is performed (step S105). In the delivery process, first, the wafer W after the supercritical drying process is transported from the processing area 181 to the delivery area 182. Then, the transport device 16 takes out the wafer W after the supercritical drying process from the delivery area 182 and transports it to the delivery portion 14. Then, the transport device 13 takes out the wafer W after the supercritical drying process from the delivery portion 14 and transports it to the carrier C.

[0061] [3. Structure of liquid processing unit]

[0062] Next, refer to Figure 3 The structure of the liquid processing unit 17 will be described. Figure 3 1 is a diagram showing a configuration example of the liquid processing unit 17. The liquid processing unit 17 is configured as a single-wafer cleaning device that cleans wafers W one by one by spin cleaning, for example.

[0063] like Figure 3As shown, the liquid processing unit 17 holds the wafer W substantially horizontally by using a wafer holding mechanism 25 disposed in an outer chamber 23 forming a processing space, and rotates the wafer holding mechanism 25 around a vertical axis to rotate the wafer W. In addition, the liquid processing unit 17 causes the nozzle arm 26 to enter above the rotating wafer W, and supplies the chemical solution and the rinse liquid in a predetermined order from the chemical solution nozzle 26a provided at the top end of the nozzle arm 26, thereby performing a cleaning process on the upper surface of the wafer W.

[0064] In the liquid processing unit 17, a chemical solution supply path 25a is also formed inside the wafer holding mechanism 25. The lower surface of the wafer W is also cleaned by the chemical solution or the rinse liquid supplied from the chemical solution supply path 25a.

[0065] In the cleaning process, for example, SC1 solution (a mixture of ammonia and hydrogen peroxide) as an alkaline chemical solution is first used to remove particulates and organic pollutants, and then deionized water (hereinafter referred to as "DIW") as a rinse liquid is used for rinsing. Then, a natural oxide film is removed using a dilute hydrofluoric acid solution (hereinafter referred to as "DHF") as an acidic chemical solution, and then DIW is used for rinsing.

[0066] The various chemical solutions are received by the outer chamber 23 and the inner cup 24 disposed in the outer chamber 23, and are discharged from the drain port 23a provided at the bottom of the outer chamber 23 and the drain port 24a provided at the bottom of the inner cup 24. In addition, the atmosphere in the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.

[0067] The liquid film forming process is performed after the rinsing process in the cleaning process. Specifically, the liquid processing unit 17 rotates the wafer holding mechanism 25 while supplying IPA liquid to the upper and lower surfaces of the wafer W. As a result, the DIW remaining on both sides of the wafer W is replaced with IPA. Afterwards, the liquid processing unit 17 gently stops the rotation of the wafer holding mechanism 25.

[0068] The wafer W after the liquid film formation process is held with the liquid film of the IPA liquid formed on its upper surface, and is handed over to the conveying device 16 by a handover mechanism (not shown) provided to the wafer holding mechanism 25, and is sent out from the liquid processing unit 17. The liquid film formed on the wafer W is prevented from pattern collapse due to evaporation (gasification) of the liquid on the upper surface of the wafer W during the transportation of the wafer W from the liquid processing unit 17 to the drying unit 18 and during the operation of sending the wafer W into the drying unit 18.

[0069] 〔4. Structure of drying unit〕

[0070] Next, refer to Figure 4 as well as Figure 5 The structure of the drying unit 18 will be described. Figure 4 1 is a schematic cross-sectional view showing the structure of the drying unit 18 according to the first embodiment. Figure 5 FIG. 2 is a schematic cross-sectional view showing an example of a state in which a plurality of wafers W are stored in a processing container.

[0071] like Figure 4 as well as Figure 5 As shown, the drying unit 18 includes a processing container 31, a plurality of covers 32a and 32b, and a plurality of holders 33a and 33b.

[0072] The processing container 31 is a pressure container capable of forming a high pressure environment of, for example, 16 MPa to 20 MPa. The processing container 31 is disposed in the processing area 181 (see Figure 1 ), the supercritical drying process is carried out in the processing space 311 inside the processing container 31.

[0073] The processing container 31 has a rectangular shape when viewed from above, and has openings 312a and 312b on two sides facing the interface area 182 among the multiple (here, four) sides. In the first embodiment, the two interface areas 182 are arranged at positions opposite to each other across the processing area 181. Therefore, the two openings 312a and 312b are arranged on the sides opposite to each other among the multiple sides of the processing container 31, and are arranged on the side on the negative direction side of the X-axis and the side on the positive direction side of the X-axis. In this way, the multiple openings 312a and 312b are respectively arranged on different sides of the processing container 31, and the opening area of ​​each side can be reduced compared with the case where the opening is set on, for example, one side. The smaller the opening area, the smaller the pressure applied to the locking member 42 described later when high pressure is applied to the processing space 311. Therefore, it is easy to ensure the pressure resistance of the processing container 31.

[0074] A plurality of (two in this case) covers 32a and 32b are respectively connected to the moving mechanism 321, and are horizontally moved between the processing area 181 and the interface area 182 by the moving mechanism 321. Thus, each cover 32a and 32b opens and closes the corresponding openings 312a and 312b of the processing container 31. Specifically, the cover 32a disposed on the negative side of the X-axis opens and closes the opening 312a formed on the side of the processing container 31 on the negative side of the X-axis, and the cover 32b disposed on the positive side of the X-axis opens and closes the opening 312b formed on the side of the processing container 31 on the positive side of the X-axis.

[0075] The plurality of (here, two) holding parts 33a and 33b each horizontally hold a different wafer W. Each holding part 33a and 33b is, for example, a rectangular frame in a plan view, and holds the wafer W by supporting the outer periphery of the wafer W from below.

[0076] The holding portion 33a of the two holding portions 33a and 33b, which is arranged on the negative direction side of the X-axis, is provided on the cover 32a of the two covers 32a and 32b, which is arranged on the negative direction side of the X-axis. In addition, the holding portion 33b of the two holding portions 33a and 33b, which is arranged on the positive direction side of the X-axis, is provided on the cover 32b of the two covers 32a and 32b, which is arranged on the positive direction side of the X-axis.

[0077] These holding parts 33a and 33b are moved to the processing area 181 together with the covers 32a and 32b by the moving mechanism 321, and are stored inside the processing space 311. Specifically, the holding part 33a that enters the processing space 311 from the negative direction of the X axis is arranged below the holding part 33b that enters the processing space 311 from the positive direction of the X axis in the processing space 311. In this way, the two holding parts 33a and 33b are arranged at intervals in the vertical direction inside the processing container 31, so that, for example, the increase in the occupied area of ​​the processing container 31 can be suppressed. In addition, in the following, when the covers 32a and 32b are not distinguished, they are sometimes collectively referred to and recorded as "cover 32". Similarly, the holding parts 33a and 33b are sometimes collectively referred to and recorded as "holding part 33", and the openings 312a and 312b are sometimes collectively referred to and recorded as "opening 312".

[0078] The processing container 31 is provided with a supply unit 35 and a discharge unit 37. The supply unit 35 and the supply unit 19 (see Figure 1 ) is connected to the supply device group of the processing space 311, and supplies the processing fluid supplied from the supply unit 19 to the processing space 311. The discharge part 37 discharges the processing fluid from the processing space 311.

[0079] The supply unit 35 is provided on the top surface of the processing space 311 in the processing container 31, and supplies the processing fluid vertically downward to the processing space 311 from the supply port opened downward. The supply unit 35 is provided near the opening 312 (here, the opening 312 on the positive direction side of the X axis) through which the upper holding unit 33 enters and exits, of the two openings 312 formed in the processing container 31. In addition, the supply unit 35 may also be a structure having a plurality of supply ports along the horizontal direction (Y axis direction) orthogonal to the arrangement direction (X axis direction) of the processing area 181 and the interface area 182.

[0080] The discharge portion 37 is provided on the bottom surface of the processing space 311 of the processing container 31, and discharges the processing fluid from the discharge port opened upward. The discharge portion 37 is provided close to the opening 312 (here, the opening 312 on the negative side of the X-axis) for the lower holding portion 33 to enter and exit among the two openings 312 formed in the processing container 31. In addition, the discharge portion 37 may also be a structure having a plurality of discharge ports along the horizontal direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the processing area 181 and the interface area 182.

[0081] The drying unit 18 supplies the treatment fluid from the supply unit 35 to the treatment space 311, and discharges the treatment fluid in the treatment space 311 through the discharge unit 37. A regulator for adjusting the discharge amount of the treatment fluid from the treatment space 311 is provided in the discharge path of the treatment fluid, and the discharge amount of the treatment fluid is adjusted by the regulator so that the pressure in the treatment space 311 is adjusted to a desired pressure. Thus, the supercritical state of the treatment fluid is maintained in the treatment space 311. Hereinafter, the treatment fluid in the supercritical state is sometimes described as "supercritical fluid".

[0082] The processing container 31 includes a first protrusion 313 and a second protrusion 314 protruding toward the opening direction of each opening 312 from each opening 312. The first protrusion 313 protrudes from the bottom of the opening 312 toward the X-axis direction, and the second protrusion 314 protrudes from the top of the opening 312 toward the X-axis direction.

[0083] The first protrusion 313 has a first through hole 315 that communicates between the upper surface and the lower surface of the first protrusion 313. In addition, the second protrusion 314 has a second through hole 316 that communicates between the upper surface and the lower surface of the second protrusion 314 at a position that is opposite to the first through hole 315 in the vertical direction (i.e., above the first through hole 315).

[0084] The drying unit 18 includes a plurality of (two in this case) locking members 42. The locking members 42 are respectively inserted into a plurality of first through holes 315 formed in the first protrusion 313. Each locking member 42 is connected to a lifting mechanism 43 that moves the locking member 42 in the vertical direction.

[0085] [5. Example of drying unit operation]

[0086] First, the drying unit 18 performs a process of feeding two wafers W. During the feeding process, the drying unit 18 horizontally moves the cover 32a disposed on the negative side of the X-axis to the positive side of the X-axis by using the moving mechanism 321, and horizontally moves the cover 32b disposed on the positive side of the X-axis to the negative side of the X-axis by using the moving mechanism 321. Thus, the two wafers W respectively held by the two holding parts 33a and 33b are stored in the processing space 311 of the processing container 31, and the processing space 311 is sealed by using the two covers 32a and 32b. In addition, the order and timing of moving the two covers 32a and 32b are not particularly limited.

[0087] Furthermore, the drying unit 18 raises the two locking members 42 using the lifting mechanism 43 , so that each locking member 42 is inserted into the second through hole 316 formed in the second protruding portion 314 .

[0088] The locking member 42 presses the cover 32 toward the processing space 311 against the internal pressure of the processing fluid supplied to the processing space 311. Thus, the processing space 311 can be maintained in a state of being sealed by the covers 32a and 32b.

[0089] Next, a pressure boosting process is performed in the drying unit 18. During the pressure boosting process, the drying unit 18 supplies the processing fluid from the supply unit 35 to the processing space 311 of the processing container 31, thereby increasing the pressure of the processing space 311. As a result, the pressure of the processing space 311 increases from the atmospheric pressure to the processing pressure. The processing pressure is a pressure that exceeds the critical pressure (approximately 7.2 MPa) at which CO2, which is the processing fluid, becomes a supercritical state, for example, about 16 MPa. By utilizing this pressure boosting process, the processing fluid in the processing space changes phase to a supercritical state, and the IPA liquid filling the surface of the wafer W begins to dissolve in the processing fluid in the supercritical state. In addition, the processing fluid supplied from the supply unit 19 can be in either a supercritical state or a liquid state.

[0090] Next, the flow process is performed in the drying unit 18. In the flow process, the drying unit 18 maintains the pressure of the processing space 311 at the processing pressure, and in this state, the processing fluid is supplied from the supply unit 35 to the processing space 311, and the processing fluid supplied to the processing space is discharged from the discharge unit 37 to the outside of the processing space 311. As a result, a laminar flow of the processing fluid flowing in a predetermined direction around the wafer W is formed in the processing space 311.

[0091] Here, refer to Figure 6 The flow path of the processing fluid in the processing space 311 is described. Figure 6 311 is a schematic cross-sectional view showing an example of a flow path of the processing fluid in the processing space 311. Figure 6 A part of the structure of the drying unit 18 is omitted and shown.

[0092] like Figure 6 As shown, the processing fluid is supplied from the supply portion 35 to the upper surface of the wafer W held by the cover body 32b of the upper layer, and then flows along its surface in the negative direction of the X-axis above the wafer W of the upper layer. Then, the processing fluid flows downward between the front end of the holding portion 33b of the upper layer and the inner wall of the processing space 311, and then flows along its surface in the positive direction of the X-axis above the wafer W held by the holding portion 33a of the lower layer. Then, the processing fluid flows downward between the front end of the holding portion 33a of the lower layer and the inner wall of the processing space 311, and then flows between the lower surface of the wafer W of the lower layer and the bottom surface of the processing space 311 in the negative direction of the X-axis. Then, the processing fluid is discharged from the discharge portion 37 to the outside of the processing space 311.

[0093] The IPA liquid on the pattern forming surface (upper surface) of the wafer W gradually dissolves in the supercritical fluid by contacting the supercritical fluid under high pressure (eg, 16 MPa), and is eventually replaced by the supercritical fluid. Thus, the gaps between the patterns are filled with the supercritical fluid.

[0094] In this way, according to the drying unit 18 , a flow of the processing fluid can be formed along the surface of each wafer W in the processing space 311 , thereby suppressing a decrease in processing uniformity when supercritical drying is performed on a plurality of wafers W simultaneously.

[0095] Next, the decompression process is performed in the drying unit 18. In the decompression process, the drying unit 18 reduces the pressure of the processing space 311 from the high pressure state to the atmospheric pressure. As a result, the supercritical fluid filling the gaps between the patterns changes to a normal processing fluid in a gas state.

[0096] In this manner, the drying unit 18 replaces the IPA liquid on the pattern forming surface with the supercritical fluid and then returns the supercritical fluid to a processing fluid in a gas state, thereby removing the IPA liquid from the pattern forming surface and drying the pattern forming surface.

[0097] The viscosity of supercritical fluid is lower than that of liquid (such as IPA liquid), and the ability to dissolve liquid is also high. In addition, there is no interface between supercritical fluid and liquid or gas in equilibrium. Therefore, by performing supercritical drying treatment, the liquid can be dried without being affected by surface tension. In other words, the pattern collapse can be suppressed during the drying process.

[0098] Here, IPA liquid is used as the liquid for preventing drying, and CO 2 is used as the processing fluid, but a liquid other than IPA can be used as the liquid for preventing drying, and a fluid other than CO 2 can be used as the processing fluid.

[0099] Thus, according to the drying unit 18 of the first embodiment, a plurality of wafers W are simultaneously subjected to supercritical drying treatment, and thus, the efficiency of supercritical drying treatment can be improved compared to a conventional substrate processing apparatus that performs supercritical drying treatment on each wafer W. In addition, for example, compared to a case where the number of drying units is increased for the purpose of improving the efficiency of supercritical drying treatment, the high cost of the substrate processing system 1 can be suppressed.

[0100] (Second embodiment)

[0101] Figure 7 It is a schematic cross-sectional view showing the structure of the drying unit according to the second embodiment. In addition, in each of the following embodiments, for easy understanding, a part of the structure of the drying unit may be omitted and shown.

[0102] like Figure 7 As shown in the figure, the drying unit 18A of the second embodiment includes a partition plate 38. The partition plate 38 is a plate-shaped member disposed between the upper holding portion 33b and the lower holding portion 33a, and extends from the inner wall on the negative side of the X-axis direction of the processing space 311 of the processing container 31 toward the inner wall on the positive side of the X-axis direction. A gap is provided between the front end of the partition plate 38 and the inner wall on the positive side of the X-axis direction of the processing space 311. In addition, the partition plate 38 may be provided separately from the processing container 31, or may be formed integrally.

[0103] In the drying unit 18A of the second embodiment, the processing fluid flows downward between the front end of the upper holding portion 33b and the inner wall of the processing space 311, and then flows in the positive direction of the X axis between the partition plate 38 and the lower surface of the upper wafer W. Then, the processing fluid flows in the negative direction of the X axis between the lower surface of the partition plate 38 and the upper surface of the lower wafer W, and then flows downward through the hollow portion of the frame-shaped holding portion 33, and is discharged from the discharge portion 37 to the outside of the processing space 311.

[0104] In this way, by providing the partition plate 38 between the upper holding portion 33b and the lower holding portion 33a, the space above the lower holding portion 33a can be reduced, and the processing fluid can be more efficiently brought into contact with the lower wafer W. In addition, the partition plate 38 is arranged at a position where the distance D1 between the lower surface of the partition plate 38 and the upper surface of the wafer W is the same as the distance D2 between the top surface of the processing space 311 and the upper surface of the upper wafer W. Thus, the processing uniformity of the supercritical drying process for the plurality of wafers W can be improved.

[0105] Here, an example in which the partition plate 38 is provided in the processing container 31 is shown, but the partition plate 38 may be provided in the lower cover 32 a or the lower holding portion 33 a .

[0106] (Third embodiment)

[0107] Figure 8 2 is a schematic cross-sectional view showing the structure of the drying unit according to the third embodiment. Figure 8 As shown, the drying unit 18B of the third embodiment includes a replenishing section 50. The replenishing section 50 is disposed in the delivery area 182 (here, the delivery area 182a) that is the delivery destination of the wafer W initially delivered to the drying unit 18B, among the two delivery areas 182, and replenishes IPA on the upper surface of the wafer W held by the holding section 33a in the delivery area 182a.

[0108] As described above, in the delivery area 182a, a liquid film of the IPA liquid is formed on the upper surface of the wafer W held by the holding portion 33a. Figure 1 ) wafers W are transported one by one, so the wafer W initially transported to the drying unit 18B waits in the transfer area 182a while the second wafer W is transported to the drying unit 18B. During this period, the IPA liquid on the upper surface of the first wafer W evaporates, which may cause a difference in the thickness of the liquid film of the two wafers W.

[0109] In contrast, the drying unit 18B of the third embodiment can replenish the IPA liquid to the wafer W first transported to the drying unit 18B among the two wafers W to be processed simultaneously using the replenisher 50. Therefore, the drying unit 18B of the third embodiment can suppress the difference in the thickness of the liquid film between the two wafers W.

[0110] In addition, the drying unit 18B may include the replenishing portion 50 in both of the two delivery regions 182 (for example, the delivery regions 182a and 182b).

[0111] (Fourth embodiment)

[0112] Fig. 9 2 is a schematic cross-sectional view showing the structure of the drying unit according to the fourth embodiment. Fig. 9 As shown, the drying unit 18C of the fourth embodiment includes a box 51 surrounding the delivery area 182 (here, the delivery area 182a), which is the area of ​​the two delivery areas 182 that becomes the delivery destination of the wafer W initially delivered to the drying unit 18C. The box 51 can accommodate the cover 32a, the holding portion 33a, and the wafer W arranged in the delivery area 182a. In addition, the drying unit 18C of the fourth embodiment includes an atmosphere gas supply unit 52 that supplies IPA atmosphere gas to the interior of the box 51.

[0113] According to the drying unit 18C of the fourth embodiment, the IPA atmosphere gas is supplied into the housing 51 using the atmosphere gas supply unit 52 , thereby suppressing the volatilization of the IPA liquid film formed on the upper surface of the wafer W. Therefore, the difference in the thickness of the liquid film between the two wafers W can be suppressed.

[0114] In addition, the drying unit 18C may include the box body 51 and the atmosphere gas supply unit 52 in both of the two delivery regions 182 (for example, the delivery regions 182 a and 182 b ).

[0115] (Fifth embodiment)

[0116] Fig.10 2 is a schematic cross-sectional view showing the structure of the drying unit according to the fifth embodiment. Fig.10 As shown, the drying unit 18D of the fifth embodiment includes a processing container 31D, two lids 32Da and 32Db, and four holding portions 33e to 33h.

[0117] The cover 32Da supports two of the four holding portions 33e to 33h, and the cover 32Db supports two of the four holding portions 33e to 33h. Specifically, the cover 32Da supports the holding portions 33e and 33f, and the cover 32Db supports the holding portions 33g and 33h.

[0118] Inside the processing space 311, among the four holders 33e to 33h, the holders 33e and 33f supported by the cover 32Da on the negative side of the X-axis and the holders 33g and 33h supported by the cover 32Db on the positive side of the X-axis are arranged alternately.

[0119] In this way, the drying unit 18D may also be a structure having more than three holding parts 33e to 33h. In this case, by arranging the holding parts 33e and 33f supported by the cover 32Da on one side and the holding parts 33g and 33h supported by the cover 32Db on the other side in a staggered manner, the intervals between the multiple holding parts 33e to 33h supported by one cover 32Da and 32Db can be widened. Therefore, the delivery of the wafer W using the conveying device 16 becomes easy. In addition, by arranging the holding parts 33e and 33f supported by the cover 32Da on one side and the holding parts 33g and 33h supported by the cover 32Db on the other side in a staggered manner, it is possible to form a flow of the processing fluid that flows through the upper surface of each wafer W in sequence from the top layer inside the processing space 311.

[0120] In the fifth embodiment, four liquid processing units 17 may be provided in each processing module 5 .

[0121] In addition, here, an example is shown in which the same number of retaining parts are provided on the cover body 32Da on one side and the cover body 32Db on the other side, but the number of retaining parts provided on the cover body 32Da on one side and the number of retaining parts provided on the cover body 32Db on the other side may be different.

[0122] (Sixth embodiment)

[0123] Fig.11 2 is a schematic cross-sectional view showing the structure of the drying unit of the sixth embodiment. Fig.11 As shown, the drying unit 18E of the sixth embodiment includes a processing container 31E having one opening, a cover 32E, and a plurality of holders 33Ea to 33Ec. The plurality of (here, three) holders 33Ea to 33Ec are provided on the cover 32E.

[0124] The drying unit 18E includes a plurality of (three in this case) supply units 35Ea to 35Ec. The plurality of supply units 35Ea to 35Ec are provided on a side surface of the processing container 31E that is opposite to the side surface where the opening is provided.

[0125] Each of the plurality of supply units 35Ea to 35Ec corresponds to each of the plurality of wafers W held by the plurality of holding units 33Ea to 33Ec. Specifically, the supply unit 35Ea of the upper layer among the three supply units 35Ea to 35Ec is arranged at a height position between the upper surface of the wafer W held by the holding unit 33Ea of the upper layer among the three holding units 33Ea to 33Ec and the top surface of the processing space 311E. Similarly, the supply unit 35Eb of the middle layer is arranged at a height position between the upper surface of the wafer W held by the holding unit 33Eb of the middle layer and the lower surface of the wafer W of the upper layer, and the supply unit 35Ec of the lower layer is arranged at a height position between the upper surface of the wafer W held by the holding unit 33Ec of the lower layer and the lower surface of the wafer W of the middle layer.

[0126] Each of the supplying parts 35Ea to 35Ec supplies the processing fluid along the upper surface of the corresponding wafer W. Therefore, according to the drying unit 18E of the sixth embodiment, the processing fluid can be uniformly supplied to the plurality of wafers W.

[0127] The drying unit 18E of the sixth embodiment has a structure in which a plurality of holding portions 33Ea to 33Ec are provided for one cover 32E. With this structure, the number of the interfacing region 182 can be reduced to one, thereby suppressing an increase in the occupied area.

[0128] Fig.12 1 is a schematic plan view showing the structure of the holding portion 33Ea according to the sixth embodiment. The holding portions 33Eb and Ec also have the same structure as the holding portion 33Ea, and their description is omitted here.

[0129] like Fig.12 As shown, the holding portion 33Ea has a hook-shaped shape when viewed from above, after removing the portion that interferes with the conveying device 16 when delivering the wafer W. Specifically, the holding portion 33Ea has a first supporting portion 331, a second supporting portion 332, and a third supporting portion 333. The first supporting portion 331 extends in the Y-axis direction and supports the outer peripheral portion of the wafer W on the negative side of the X-axis. The second supporting portion 332 extends in the X-axis direction from the end of the first supporting portion 331 on the positive side of the Y-axis and supports the outer peripheral portion of the wafer W on the positive side of the Y-axis. The third supporting portion 333 extends in the Y-axis direction from the end of the second supporting portion 332 on the positive side of the X-axis and supports the outer peripheral portion of the wafer W on the positive side of the X-axis. The holding portion 33Ea supports the wafer W at three points using the first supporting portion 331, the second supporting portion 332, and the third supporting portion 333.

[0130] When a plurality of holding portions 33Ea to 33Ec are provided for one cover body 32E, the intervals between the holding portions 33Ea to 33Ec are reduced, which may make it difficult to deliver the wafer W by the conveying device 16. In contrast, by forming the holding portion 33E into the above-described shape, even when the intervals between the plurality of holding portions 33Ea to 33Ec are small, interference between the conveying device 16 and the holding portions 33Ea to 33Ec can be suppressed.

[0131] (Seventh Implementation Method)

[0132] Fig.13 2 is a schematic cross-sectional view showing the structure of the drying unit of the seventh embodiment. Fig.13 As shown, the drying unit 18F according to the seventh embodiment includes a processing container 31F, a cover 32F, and a plurality of holding portions 33F.

[0133] The processing container 31F has an opening 312F at the upper portion thereof. The cover 32F is disposed above the processing container 31F and is moved in the vertical direction by a moving mechanism 321F.

[0134] A plurality of holding portions 33F are provided on the lower surface of the cover 32F, which is the ceiling surface of the processing space 311F, via a support member 39 extending in the vertical direction. The plurality of holding portions 33F are arranged at intervals in the vertical direction.

[0135] The drying unit 18F moves the cover 32F downward using the moving mechanism 321F, so that the plurality of holders 33F provided on the cover 32F are accommodated in the processing space 311F of the processing container 31F, and the processing space 311F is sealed by the cover 32F.

[0136] A supply unit 35F is provided in the processing container 31F, and a processing fluid is supplied to the processing space 311F via the supply unit 35F. In addition, a discharge unit 37F is provided in the processing container 31F, and the processing fluid is discharged from the processing space 311F via the discharge unit 37F. Here, an example is shown in which the supply unit 35F and the discharge unit 37F are provided on the bottom surface of the processing space 311F, but the supply unit 35F and the discharge unit 37F may also be provided on the side of the processing space 311F. In this case, the drying unit 18F may be provided with a plurality of supply units for supplying the processing fluid along the upper surface of each wafer W. Specifically, it is preferred to have the same number of supply units as the number of wafers W. In addition, a structure having a plurality of supply units corresponding to each of the plurality of wafers W held by a plurality of holding units and supplying the processing fluid along the upper surface of the corresponding wafer W can also be applied to drying units of other embodiments.

[0137] In this way, the plurality of holding portions 33F may be provided on the cover 32F capable of opening and closing the processing container 31F whose upper portion is open.

[0138] (Other embodiments)

[0139] In the first to fourth embodiments, an opening 312 is provided on each of two mutually opposite side surfaces among the plurality of side surfaces of the processing container 31, and one wafer W is introduced from the opening 312 on one side, and the other wafer W is introduced from the opening 312 on the opposite side. Not limited thereto, the two openings 312 may be provided on two mutually orthogonal side surfaces among the plurality of side surfaces of the processing container 31. For example, the opening 312 may be provided on the side surface on the negative direction side of the X axis and the side surface on the negative direction side of the Y axis among the plurality of side surfaces of the processing container 31. The same is true for the cover 32D of the fifth embodiment.

[0140] Furthermore, the number of liquid processing units 17 provided in each processing module 5 does not necessarily have to be the same as the number of wafers W processed simultaneously by the drying units 18 and 18A to 18F. For example, in the substrate processing system 1 of the first embodiment, the number of liquid processing units 17 provided in the processing module 5 may be one.

[0141] As described above, the substrate processing apparatus of the embodiment (as an example, the drying units 18, 18A to 18F) is a substrate processing apparatus that uses a processing fluid in a supercritical state to perform a drying process to dry a substrate (as an example, a wafer W). The substrate processing apparatus of the embodiment includes a processing container (as an example, the processing container 31, 31D to 31F), and a plurality of holding parts (as an example, the holding parts 33, 33E, 33F). The processing container is a container for performing a drying process. The plurality of holding parts respectively hold different substrates inside the processing container. Therefore, according to the substrate processing apparatus of the embodiment, it is possible to seek to improve the efficiency of the supercritical drying process.

[0142] A plurality of holding parts (for example, holding parts 33, 33E, and 33F) may be arranged at intervals in the vertical direction inside the processing container. This can, for example, suppress an increase in the occupied area of ​​the processing container.

[0143] Alternatively, the substrate processing apparatus of the embodiment (as an example, the drying units 18, 18A to 18D) may include a first cover (as an example, the cover 32, 32D disposed on the negative side of the X-axis) and a second cover (as an example, the cover 32, 32D disposed on the positive side of the X-axis). The first cover can open and close the first opening (as an example, the opening 312 on the negative side of the X-axis) provided on the first side surface (as an example, the side surface on the negative side of the X-axis) of the processing container (as an example, the processing container 31, 31D). The second cover can open and close the second opening (as an example, the opening 312 on the positive side of the X-axis) provided on the second side surface (as an example, the side surface on the positive side of the X-axis) of the processing container. In this case, a part of the holding parts (as an example, one or more holding parts 33 disposed on the negative side of the X-axis) of the plurality of holding parts may also be provided on the first cover. In addition, another part of the plurality of holding parts (for example, one or more holding parts 33 arranged on the positive direction side of the X axis) can also be provided on the second cover. In this way, by providing a plurality of openings on different sides of the processing container, it is easy to ensure the pressure resistance of the processing container.

[0144] Alternatively, inside the processing container (for example, the processing container 31D), a portion of the plurality of holders (for example, the plurality of holders 33 provided in the drying unit 18D) of the plurality of holders (for example, the plurality of holders 33 provided in the drying unit 18D) of the plurality of holders (for example, the plurality of holders 33 provided in the drying unit 18D) of the plurality of holders (for example, the plurality of holders 33 provided in the drying unit 18D) of the plurality of holders (for example, the plurality of holders 33 provided in the drying unit 18D) of the plurality of holders may be arranged alternately. Thus, the intervals between the plurality of holders supported by one cover body can be widened, thereby facilitating the transfer of substrates using the conveying device.

[0145] Alternatively, the second side surface (for example, the side surface on the positive direction side of the X-axis) may be disposed at a position opposite to the first side surface (for example, the side surface on the negative direction side of the X-axis) among the plurality of side surfaces of the processing container (for example, the processing container 31, 31D). Thus, for example, by disposing the first side surface and the second side surface along the length direction of the substrate processing system 1, it is possible to suppress an increase in the width of the substrate processing system 1 in the width direction.

[0146] Alternatively, the substrate processing apparatus (as an example, the drying unit 18E) of the embodiment may further include a cover (as an example, the cover 32E) capable of opening and closing an opening provided on the side of the processing container (as an example, the processing container 31E). In this case, a plurality of holding portions (as an example, the holding portion 33E) may also be provided on the cover (as an example, the cover 32E). Thus, the number of the interface region 182 can be set to one, thereby suppressing the increase in the occupied area.

[0147] Alternatively, the substrate processing apparatus (for example, the drying unit 18F) of the embodiment may further include a cover (for example, the cover 32F) capable of opening and closing the processing container (for example, the processing container 31F) opened at the top. In this case, a plurality of holding portions (for example, the holding portion 33F) may also be provided on the cover (for example, the cover 32F). Thus, the increase in the occupied area can be suppressed.

[0148] Alternatively, the substrate processing apparatus of the embodiment (as an example, the drying units 18, 18A to 18D) includes a supply unit 35 and a discharge unit 37. The supply unit 35 is arranged at a position above the substrate held by the uppermost holding unit among the plurality of holding units (as an example, the holding unit 33) inside the processing container, and is used to supply the processing fluid to the inside of the processing container. The discharge unit 37 is arranged at a position below the substrate held by the lowermost holding unit among the plurality of holding units inside the processing container, and is used to discharge the processing fluid from the inside of the processing container. Thus, a flow of the processing fluid that flows sequentially from the uppermost layer over the upper surfaces of the substrates can be formed inside the processing space.

[0149] Alternatively, the substrate processing apparatus of the embodiment (as an example, the drying unit 18A) further includes a partition plate 38, and the partition plate 38 is disposed between two holding portions adjacent in the vertical direction inside the processing container (as an example, the processing container 31). Thus, the space above the lower holding portion of the two vertically adjacent holding portions can be reduced, and the processing fluid can be brought into contact with the substrate held in the lower holding portion more efficiently.

[0150] Alternatively, in the substrate processing apparatus of the embodiment (as an example, the drying unit 18A), the upper holding portion 33b of the two holding portions 33a and 33b adjacent in the vertical direction is the uppermost holding portion of the plurality of holding portions 33a and 33b. In this case, the partition plate 38 may be arranged at a position where the distance D1 between the upper surface of the substrate held by the lower holding portion 33a of the two holding portions 33a and 33b adjacent in the vertical direction and the lower surface of the partition plate 38 is the same as the distance D2 between the upper surface of the substrate held by the upper holding portion 33b of the two holding portions 33a and 33b adjacent in the vertical direction and the top surface of the processing container 31. Thus, the processing uniformity of the supercritical drying process for the plurality of substrates can be improved.

[0151] Alternatively, the substrate processing apparatus (the drying unit 18E as an example) of the embodiment may further include a plurality of supply units (the supply unit 35E as an example) that supply the processing fluid along the upper surfaces of corresponding substrates among the plurality of substrates held by the plurality of holding units (the holding unit 33E as an example) in the processing container (the processing space 311E as an example). Thus, the processing fluid can be uniformly supplied to the plurality of substrates accommodated in the processing container.

[0152] Alternatively, the substrate processing apparatus (drying unit 18B as an example) of the embodiment may further include a replenishing unit 50, which is disposed in an interface region (interface region 182 as an example) adjacent to the processing container and is used to replenish the liquid (IPA as an example) on the upper surface of the substrate. This can suppress the difference in thickness of the liquid film between the plurality of substrates.

[0153] Alternatively, the substrate processing apparatus of the embodiment (as an example, the drying unit 18C) includes a housing 51 and an atmosphere gas supply unit 52. The housing 51 surrounds the interface region (as an example, the interface region 182) adjacent to the processing container, and the housing 51 can accommodate substrates on which a film of a liquid (as an example, IPA) is formed. The atmosphere gas supply unit 52 supplies the atmosphere gas of the liquid to the interior of the housing 51. Thus, it is possible to suppress the difference in the thickness of the liquid film between the plurality of substrates.

[0154] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. In essence, the embodiments described above can be embodied in a variety of forms. In addition, the embodiments described above can be omitted, replaced, or changed in various forms without departing from the appended claims and their gist.

Claims

1. A substrate processing device, which uses a processing fluid in a supercritical state to perform a drying process to dry a substrate, wherein: The substrate processing device comprises: a processing container, which performs the drying process; as well as a plurality of holding parts, each of which holds different substrates in the processing container; The plurality of holding portions are arranged at intervals in the vertical direction inside the processing container. The substrate processing device also includes: a first cover capable of opening and closing a first opening provided on a first side surface of the processing container; and a second cover capable of opening and closing a second opening provided on a second side surface of the processing container, A part of the plurality of holding portions is provided on the first cover body, Another part of the plurality of holding portions is provided on the second cover body, Inside the processing container, the retaining portions of one part of the multiple retaining portions and the retaining portions of another part of the multiple retaining portions are arranged alternately, so that a flow of the processing fluid can be formed inside the processing container to flow through the upper surfaces of each substrate in sequence from the top layer.

2. The substrate processing apparatus according to claim 1, wherein: The second side surface is disposed at a position opposing the first side surface among the plurality of side surfaces of the processing container.

3. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing device also includes: a supply unit, disposed inside the processing container at a position above the substrate held by the uppermost holding unit among the plurality of holding units, and configured to supply the processing fluid into the processing container; as well as The discharge portion is disposed inside the processing container at a position lower than the substrate held by the holding portion at the lowest layer among the plurality of holding portions, and is used to discharge the processing fluid from the inside of the processing container.

4. The substrate processing apparatus according to claim 3, wherein: The substrate processing apparatus further includes a partition plate disposed between two of the holding portions adjacent to each other in the vertical direction in the processing container.

5. The substrate processing apparatus according to claim 4, wherein: The upper holding portion of two holding portions adjacent to each other in the vertical direction is the uppermost holding portion of the plurality of holding portions. The partition plate is arranged at the following position: the distance between the upper surface of the substrate held by the lower holding part of the two holding parts adjacent in the vertical direction and the lower surface of the partition plate is the same as the distance between the upper surface of the substrate held by the upper holding part of the two holding parts adjacent in the vertical direction and the top surface of the processing container.

6. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing apparatus further includes a plurality of supply units configured to supply the processing fluid along upper surfaces of corresponding substrates among the plurality of substrates held by the plurality of holding units in the processing container.

7. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing apparatus further includes a replenishing portion, which is disposed in an interface region adjacent to the processing container and is used to replenish the liquid to the upper surface of the substrate having a film of the liquid formed on the upper surface.

8. The substrate processing apparatus according to claim 1 or 2, wherein: The substrate processing device also includes: a box body surrounding an interface region adjacent to the processing container, the box body being capable of housing the substrate having a liquid film formed on an upper surface thereof; and An atmosphere gas supply unit is used to supply an atmosphere gas of the liquid into the interior of the housing.

9. A substrate processing apparatus, which uses a processing fluid in a supercritical state to perform a drying process to dry a substrate, wherein: The substrate processing device comprises: a processing container, which performs the drying process; as well as a plurality of holding parts, each of which holds different substrates in the processing container; The plurality of holding portions are arranged at intervals in the vertical direction inside the processing container. The substrate processing device also includes: a supply unit, disposed inside the processing container at a position above the substrate held by the uppermost holding unit among the plurality of holding units, and configured to supply the processing fluid into the processing container; as well as a discharge portion, disposed inside the processing container at a position lower than the substrate held by the bottommost holding portion among the plurality of holding portions, for discharging the processing fluid from the inside of the processing container, The substrate processing apparatus further comprises a partition plate, which is arranged inside the processing container between two of the holding portions adjacent to each other in the vertical direction. A gap is provided between the front end of the partition plate and the inner wall of the processing container.

10. A substrate processing method, wherein: The substrate processing method comprises: A holding step of holding a plurality of substrates using a plurality of holding portions provided in the substrate processing apparatus; a storing step of storing the plurality of holding portions holding the plurality of substrates in a processing container provided in the substrate processing apparatus; as well as a drying step of drying the plurality of substrates in the processing container using a processing fluid in a supercritical state; The plurality of holding portions are arranged at intervals in the vertical direction inside the processing container. The substrate processing device also includes: a first cover capable of opening and closing a first opening provided on a first side surface of the processing container; and a second cover capable of opening and closing a second opening provided on a second side surface of the processing container, A part of the plurality of holding portions is provided on the first cover body, Another part of the plurality of holding portions is provided on the second cover body, Inside the processing container, the retaining portions of one part of the multiple retaining portions and the retaining portions of another part of the multiple retaining portions are arranged alternately, so that a flow of the processing fluid can be formed inside the processing container to flow through the upper surfaces of each substrate in sequence from the top layer.

11. A substrate processing method, wherein: The substrate processing method comprises: A holding step of holding a plurality of substrates using a plurality of holding portions provided in the substrate processing apparatus; a storing step of storing the plurality of holding portions holding the plurality of substrates in a processing container provided in the substrate processing apparatus; as well as a drying step of drying the plurality of substrates in the processing container using a processing fluid in a supercritical state; The plurality of holding portions are arranged at intervals in the vertical direction inside the processing container. The substrate processing device also includes: a supply unit, disposed inside the processing container at a position above the substrate held by the uppermost holding unit among the plurality of holding units, and configured to supply the processing fluid into the processing container; as well as a discharge portion, disposed inside the processing container at a position lower than the substrate held by the bottommost holding portion among the plurality of holding portions, for discharging the processing fluid from the inside of the processing container, The substrate processing apparatus further comprises a partition plate, which is arranged inside the processing container between two of the holding portions adjacent to each other in the vertical direction. A gap is provided between the front end of the partition plate and the inner wall of the processing container.

Images