A packaging structure for a reverse-bend inner insulation product
By using a packaging structure of reverse-bending internal insulating products in the semiconductor packaging structure, the heat sink, alumina substrate and frame pins are soldered using high-temperature solder and epoxy colloids, and the chip is encapsulated, the chip in the prior art is solved. The contradiction between insulation and heat dissipation achieves the efficient insulation and heat dissipation effect of the chip.
Patent Information
- Application Number
- CN202011598870.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-12-30
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2040-12-30
AI Technical Summary
The existing semiconductor TO series packaging structures have a contradiction between pursuing the insulation and heat dissipation of the chip, and it is impossible to achieve good insulation and heat dissipation at the same time.
Using the packaging structure of the reverse-bending inner insulation product, the heat sink, alumina substrate and frame pins are soldered together through high-temperature soldering tape, and the chip and alumina substrate are encapsulated with epoxy colloids to ensure the insulation of the chip. At the same time, good heat dissipation is achieved.
The balance between the insulation and heat dissipation of the chip is achieved, ensuring that the chip can effectively dissipate heat while being insulated, reducing the hollow rate on the back of the chip, and improving the overall performance of the packaging.
Smart Images
Figure CN112582353B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of semiconductor TO series packaging, and in particular to a packaging structure of a reverse-bent inner insulation product. Background Art
[0002] Semiconductor packaging refers to the process of processing the tested wafers into independent chips according to the product model and functional requirements; the packaging process is as follows: the wafers from the wafer front-end process are cut into small chips through the dicing process, and then the cut chips are glued to the small islands of the corresponding substrate (lead frame) frame, and then the bonding pads of the chips are connected to the corresponding pins of the substrate using ultra-fine metal (gold, tin, copper, and aluminum) wires or conductive resins to form the required circuits; then the independent chips are encapsulated and protected with plastic shells, and a series of operations are required after plastic encapsulation. After the packaging is completed, the finished product is tested, usually after inspection, testing, and packaging, and finally shipped; the semiconductor production process consists of wafer manufacturing, wafer testing, chip packaging, and post-packaging testing; after plastic encapsulation, a series of operations are required, such as post-curing, cutting and molding, electroplating, and printing; the typical packaging process is as follows: dicing, chip mounting, bonding, plastic encapsulation, flash removal, electroplating, printing, cutting and molding, appearance inspection, finished product testing, packaging, and shipping.
[0003] The existing semiconductor TO series packaging structure has the following deficiencies: in order to make the chip have good insulation, the chip is tightly wrapped, which makes the heat dissipation effect of the chip poor; in order to make the chip have good heat dissipation effect, the insulation of the chip is deteriorated.
[0004] Therefore, it is necessary to invent a packaging structure of a reverse-bend inner insulation product. Summary of the invention
[0005] To this end, the present invention provides a packaging structure for a reverse-bend inner insulation product, by using welding strips 1, 2 and 3 of high-temperature solder to weld a heat sink, an alumina substrate, a frame pin and a chip together, and setting an epoxy colloid to encapsulate the chip and the alumina substrate, so as to achieve the goal of insulating the chip while enabling the chip to dissipate heat well, thereby solving the shortcomings of the existing semiconductor TO series packaging structure.
[0006] In order to achieve the above object, the present invention provides the following technical solutions:
[0007] A packaging structure of a reverse-bend inner insulation product, comprising a heat sink, an epoxy colloid, a chip, an alumina substrate, and a frame pin, wherein a third welding strip is provided above the heat sink, the alumina substrate is provided above the third welding strip, a second welding strip is provided above the alumina substrate, the frame pin is provided on the second welding strip, a first welding strip is provided above the frame pin, the chip is provided above the first welding strip, a first bending point and a second bending point are provided on the frame pin, and the epoxy colloid encapsulates the chip and the alumina substrate.
[0008] Preferably, the chip and the frame pins constitute polar electrodes.
[0009] Preferably, the heat sink and the alumina substrate are fixed and connected via the welding strip three.
[0010] Preferably, the alumina substrate and the frame pins are fixed and connected via the second welding strip.
[0011] Preferably, the frame pins and the chip are fixed and connected via a welding strip.
[0012] Preferably, first stress release grooves are provided at equal intervals on the heat sink.
[0013] Preferably, a third stress relief groove is provided at the bottom of the frame pin, and the third stress relief groove is semicircular.
[0014] Preferably, second stress relief grooves are provided at equal distances on the top of the frame pins, and the second stress relief grooves are rectangular.
[0015] The beneficial effects of the present invention are:
[0016] 1. The setting of the alumina substrate can insulate the chip and the heat sink, so that the chip and the heat sink can be completely insulated, effectively dissipating the heat of the chip through the heat sink, and achieving the insulation of the chip;
[0017] 2. The first stress release groove, the second stress release groove and the third stress release groove are arranged so that the chip can be completely melted when assembled and sintered on the frame pins, thereby reducing the void rate on the back of the chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 A schematic diagram of the structure provided by the present invention;
[0019] Figure 2 The present invention provides Figure 1 A partial enlarged view of
[0020] Figure 3 The present invention provides Figure 2 Enlarged view of point A in the middle.
[0021] In the figure: heat sink 1, epoxy colloid 3, chip 4, alumina substrate 5, frame pin 6, pole electrode 7, welding ribbon 1 8, welding ribbon 2 9, welding ribbon 3 10, first stress release groove 11, second stress release groove 12, third stress release groove 13, first bend 61, second bend 62. DETAILED DESCRIPTION
[0022] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.
[0023] Refer to the instruction manual Figure 1-3 The packaging structure of a reverse-bend inner insulation product of this embodiment includes a heat sink 1, an epoxy colloid 3, a chip 4, an alumina substrate 5, and a frame pin 6. A welding strip three 10 is provided above the heat sink 1, the alumina substrate 5 is provided above the welding strip three 10, a welding strip two 9 is provided above the alumina substrate 5, the frame pin 6 is provided on the welding strip two 9, a welding strip one 8 is provided above the frame pin 6, the chip 4 is provided above the welding strip one 8, a first bending point 61 and a second bending point 62 are provided on the frame pin 6, the epoxy colloid 3 encapsulates the chip 4 and the alumina substrate 5; the second stress release groove 12 and the third stress release groove 13 are used to enable the chip 4 to be assembled and sintered on the frame pin 6 to achieve complete melting, thereby reducing the void rate on the back of the chip 4.
[0024] Furthermore, the chip 4 and the frame pin 6 form a pole electrode 7 .
[0025] Furthermore, the heat sink 1 and the alumina substrate 5 are fixed and connected via the welding strip 3 10 .
[0026] Furthermore, the alumina substrate 5 and the frame pin 6 are fixed and connected by the welding strip 2 9; the alumina substrate 5 mainly serves to insulate the chip 4 and the heat sink 1, so that the chip 4 and the heat sink 1 can be completely insulated, and the heat of the chip 4 can be effectively dissipated through the heat sink 1.
[0027] Furthermore, the frame pin 6 and the chip 4 are fixed and connected via a welding strip 8 .
[0028] Furthermore, first stress release grooves 11 are provided at equal intervals on the heat sink 1 .
[0029] Furthermore, a third stress release groove 13 is provided at the bottom of the frame pin 6 , and the third stress release groove 13 is semicircular.
[0030] Furthermore, second stress release grooves 12 are equidistantly formed on the top of the frame pin 6 , and the second stress release grooves 12 are rectangular.
[0031] The specific implementation scenario is as follows: when using the present invention, a first stress release groove 11 is opened at an equal distance on the heat sink 1, a semicircular third stress release groove 13 is opened at an equal distance at the bottom of the frame pin 6, a rectangular second stress release groove 12 is opened at the top of the frame pin 6, and the right end of the frame pin 6 is bent twice to form a first bend 61 and a second bend 62, the heat sink 1 and the alumina substrate 5 are welded together using high-temperature solder, and a welding strip three 10 is formed between the heat sink 1 and the alumina substrate 5, the alumina substrate 5 and the frame pin 6 are welded together using high-temperature solder, and a welding strip two 9 is formed between the alumina substrate 5 and the frame pin 6, the chip 4 is welded to the frame pin 6 using high-temperature solder, and a welding strip one 8 is formed between the chip 4 and the frame pin 6, and finally the chip 4 and the alumina substrate 5 are encapsulated using epoxy glue.
[0032] The above is only a preferred embodiment of the present invention. Any person skilled in the art may modify the present invention by using the above technical solution or modify it into an equivalent technical solution. Therefore, any simple modification or equivalent replacement made according to the technical solution of the present invention shall fall within the scope of protection claimed by the present invention.
Claims
1. A packaging structure of a reverse-bend inner insulation product, comprising a heat sink (1), an epoxy colloid (3), a chip (4), an alumina substrate (5), and a frame pin (6), characterized in that: The heat sink (1) is provided with first stress release grooves (11) at equal intervals, a welding strip three (10) is provided above the heat sink (1), the aluminum oxide substrate (5) is provided above the welding strip three (10), a welding strip two (9) is provided above the aluminum oxide substrate (5), the frame pin (6) is provided on the welding strip two (9), a third stress release groove (13) is provided at the bottom of the frame pin (6), a second stress release groove (12) is provided at equal intervals at the top of the frame pin (6), a welding strip one (8) is provided above the frame pin (6), the chip (4) is provided above the welding strip one (8), the frame pin (6) is provided with a first bending point (61) and a second bending point (62), and the epoxy colloid (3) encapsulates the chip (4) and the aluminum oxide substrate (5).
2. The packaging structure of the reverse-bend inner insulation product according to claim 1, characterized in that: The chip (4) and the frame pin (6) form a polar electrode (7).
3. The packaging structure of the reverse-bend inner insulation product according to claim 1, characterized in that: The heat sink (1) and the alumina substrate (5) are fixed and connected via the welding strip three (10).
4. The packaging structure of the reverse-bent inner insulation product according to claim 1, characterized in that: The alumina substrate (5) and the frame pin (6) are fixed and connected via the second welding strip (9).
5. The packaging structure of the reverse-bend inner insulation product according to claim 1, characterized in that: The frame pin (6) and the chip (4) are fixed and connected via a welding strip (8).
6. The packaging structure of the reverse-bend inner insulation product according to claim 1, characterized in that: The third stress release groove (13) is semicircular.
7. The packaging structure of the reverse-bend inner insulation product according to claim 1, characterized in that: The second stress release groove (12) is rectangular.