Gate driving device and gate driving method, power semiconductor module and power conversion device
By precharging the semiconductor device before the drive branch is disconnected in the half-bridge circuit, the negative-side gate surge voltage problem of the SiC-MOSFET is solved, achieving reliability protection for the switching element.
Patent Information
- Application Number
- CN202110186742.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-03-18
- Filing Date
- 2021-02-18
- Publication Date
- 2025-09-30
- Estimated Expiration
- 2041-02-18
AI Technical Summary
In a half-bridge circuit, the negative-side gate surge voltage of a SiC-MOSFET can easily exceed the rated voltage, leading to failure or characteristic degradation of the switching element. This risk increases particularly during high-speed switching.
Before the drive branch starts to disconnect, the gate drive device charges the main terminal and gate terminal of the semiconductor device to a voltage value that is greater than the negative voltage of the gate negative power supply in the positive direction and smaller than the gate threshold voltage to suppress the negative side gate surge voltage.
The negative-side gate surge voltage is effectively suppressed, false triggering and characteristic degradation of the switching element are prevented, and the reliability of the switching element is improved.