Adapter plate, forming method thereof, packaging method and packaging structure

By etching the base of the adapter plate to form interconnection zone and capacitor zone trenches, and forming capacitors in the capacitor zone, integrating the process flow of capacitors and adapter plates, the signal delay and power consumption problems caused by the long distance between the capacitor and the chip are solved, and more efficient process integration and performance improvement are achieved.

CN113903721BActive Publication Date: 2025-08-19SEMICON MFG NORTH CHINA (BEIJING) CORP
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Patent Information

Application Number
CN202010571641.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-06-22
Publication Date
2025-08-19
Estimated Expiration
2040-06-22

AI Technical Summary

Technical Problem

In the prior art, the distance between the capacitor and the chip in the package structure of the silicon interposer layer is relatively long, resulting in increased signal delay and power consumption, and the process of forming capacitors is complicated, which increases the process flow and cost.

Method used

Etching is performed on the front of the substrate of the adapter plate to form trenches of the interconnection zone and the capacitor region, and forming capacitors in the capacitor region, integrating the process flow of the capacitor and the adapter plate, eliminating the additional step of forming capacitors, and thinning the back of the substrate to expose the through-hole interconnection structure by forming a conductive via and through-hole interconnection structure in the substrate.

Benefits of technology

By integrating the process flow of capacitors and adapter boards, the process cost and production cycle are reduced, the functional diversity and performance of adapter boards are improved, the distance between the capacitor and the chip is shortened, and the signal transmission rate is improved.

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Abstract

A transfer board and its forming method, packaging method, and packaging structure, the transfer board forming method comprising: providing a substrate including an interconnection region and a capacitor region, the substrate including a front side and a back side facing each other; etching the front side of the substrate to form a first groove in the substrate in the interconnection region and a second groove in the substrate in the capacitor region; forming a capacitor in the second groove; etching a portion of the thickness of the substrate below the first groove to form a conductive through-hole; forming a through-hole interconnection structure in the conductive through-hole; and thinning the back side of the substrate to expose the through-hole interconnection structure. The embodiment of the present invention also forms a capacitor in the transfer board, thereby integrating the processes of forming the capacitor and forming the transfer board, eliminating the additional step of forming the capacitor, which is beneficial for saving process steps, improving process integration, and thus reducing process costs and shortening production cycles. It also increases the functional diversity of the transfer board, thereby diversifying the application scenarios of the transfer board.
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