Ceramic electronic devices

By adjusting the polarization conditions and structure in the dielectric layer of ceramic electronic devices, the movement of oxygen vacancies and the interface resistance are effectively controlled, solving the problem of degradation of insulation performance caused by oxygen vacancies accumulation, and achieving long life and high reliability of the device.

CN113936916BActive Publication Date: 2025-03-28TAIYO YUDEN KK
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Patent Information

Application Number
CN202110727009.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2021-04-05
Filing Date
2021-06-29
Publication Date
2025-03-28
Estimated Expiration
2041-06-29

AI Technical Summary

Technical Problem

The accumulation of oxygen vacancy and reduced interface resistance of existing ceramic electronic devices in the dielectric layer leads to a decrease in insulation performance, affecting device life.

Method used

The structure of the dielectric layer is adjusted under the TSDC conditions where the polarization temperature is 150°C, the polarization electric field is 15V/μm to 20V/μm, the polarization time is 60 minutes, and the temperature rise rate is 10°C/min, the structure of the dielectric layer is so that the ratio IA/IB of the peak current is greater than 0.30, and the peak current IB is 100pA/mm2 or less.

Benefits of technology

The long life and high reliability of ceramic electronic devices are achieved, and good insulation performance can be maintained even under relatively high electric fields.

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Abstract

A ceramic electronic device includes a laminated structure in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately laminated. In TSDC with a polarization temperature of 150°C, a polarization electric field of 15 V / μm to 20 V / μm, a polarization time of 60 minutes, and a heating rate of 10°C / minute, when the peak current on the low temperature side is I A , the peak current on the high temperature side in the temperature range of 230°C to 350°C is I B When "I A / I B >0.30”, and the peak current I B 100pA / mm 2 the following.
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