Semiconductor device with wireless transmitter and / or wireless receiver

Abstract

Embodiments of this disclosure relate to a semiconductor device having a wireless transmitter and / or a wireless receiver. The semiconductor device includes a semiconductor chip and a conductive chip carrier, wherein the semiconductor chip is mounted on the chip carrier. The semiconductor device also includes a conductive extension mechanically connected to the chip carrier, wherein the extension and the chip carrier are formed as a single, integrated unit. A portion of the chip carrier having the extension is designed as an antenna.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device having a wireless transmitter and / or a wireless receiver. Background Technology

[0002] Semiconductor devices with wireless transceivers may have antennas that radiate and receive electromagnetic waves. For some communication technologies, such as Wi-Fi, Bluetooth, and ZigBee, the antenna can often exist as a separate component, which leads to higher system costs and increased space requirements on the circuit board. Semiconductor device manufacturers are constantly striving to improve their products. In particular, they may expect to develop inexpensive devices with small sizes. They may also expect to provide methods for manufacturing such semiconductor devices. Summary of the Invention

[0003] Various aspects relate to a semiconductor device. The semiconductor device includes a semiconductor chip and a conductive chip carrier, wherein the semiconductor chip is mounted on the chip carrier. The semiconductor device also includes a conductive extension mechanically connected to the chip carrier, wherein the extension and the chip carrier are formed as a single, integrated unit. A portion of the chip carrier, including the extension, is designed as an antenna.

[0004] Various aspects relate to a method of manufacturing a semiconductor device. The method includes forming a conductive chip carrier and mounting a semiconductor chip on a mounting plane of the chip carrier. The method also includes bending a portion of the chip carrier outward from the mounting plane, wherein at least one segment of the chip carrier having the bent portion is designed as an antenna. Attached Figure Description

[0005] The methods and apparatus according to this disclosure are explained in more detail below with reference to the accompanying drawings. The elements shown in the drawings are not necessarily drawn to scale relative to each other. The same reference numerals may indicate the same components.

[0006] Figure 1 A cross-sectional side view of a semiconductor device 100 according to the present disclosure is shown schematically.

[0007] Figure 2 A cross-sectional side view of a semiconductor device 200 according to the present disclosure is shown schematically.

[0008] Figure 3 A cross-sectional side view of a semiconductor device 300 according to the present disclosure is shown schematically.

[0009] Figure 4 A cross-sectional side view of a semiconductor device 400 according to the present disclosure is shown schematically.

[0010] Figure 5 A perspective view of a semiconductor device 500 according to the present disclosure is shown.

[0011] Figure 6 A perspective view of a semiconductor device 600 according to the present disclosure is shown.

[0012] Figure 7 A perspective view of a semiconductor device 700 according to this disclosure is shown.

[0013] Figure 8 A cross-sectional side view of a semiconductor device 800 according to the present disclosure is shown schematically.

[0014] Figure 9 includes Figure 9A and 9B The diagram shows a cross-sectional side view and a top view of a semiconductor device 900 according to the present disclosure.

[0015] Figure 10 A flowchart of the method according to the present invention is shown.

[0016] Figure 11 contains Figure 11A and 11B It illustrates the method operation of a method for manufacturing a semiconductor device according to the present disclosure.

[0017] Figure 12 contains Figure 12A and 12B The diagram shows a perspective view and a top view of a semiconductor device 1200 according to the present disclosure. Detailed Implementation

[0018] The accompanying drawings described below illustrate apparatus and methods according to this disclosure. The described apparatus and methods are presented in a general manner in order to qualitatively describe aspects of this disclosure. For simplicity, the described apparatus and methods may have other aspects not shown in the corresponding drawings. However, the various examples can be extended to include aspects described in conjunction with other examples according to this disclosure. Therefore, embodiments for a particular drawing can be equivalently applied to examples in other drawings.

[0019] Figure 1 The semiconductor device 100 may have a conductive chip carrier 2 and a MEMS sensor chip 4 mounted on its underside. Furthermore, a logic chip 6 may be disposed on the MEMS sensor chip 4. A conductive extension 8 may be mechanically connected to the chip carrier 2. A spacer 10 may optionally be disposed between the chip carrier 2 and the extension 8. These aforementioned components of the semiconductor device 100 may be at least partially encapsulated by an encapsulation material 12.

[0020] MEMS sensor chip 4 can be a semiconductor chip with one or more MEMS structures, which can be integrated into MEMS sensor chip 4. MEMS sensor chip 4 can be designed to detect one or more physical parameters, such as pressure, acceleration, temperature, air humidity, etc. Examples of sensors are pressure sensors, tire pressure sensors, acceleration sensors, gas sensors, air humidity sensors, etc. Figure 1 In the examples, pressure sensors that are part of a tire pressure monitoring system (TPMS) may be specifically involved. Figure 1 In this example, the MEMS sensor chip 4 may not be covered by the encapsulation material 12 on its top side, allowing its MEMS structure to detect physical parameters. In this case, the encapsulation material 12 may have an opening or recess 18 when the MEMS sensor chip 4 is in this position.

[0021] The logic chip 6, or one or more circuits contained therein, can be designed to logically process the measurement signals provided by the MEMS sensor chip 4. The logic chip 6 can be, for example, an ASIC (Application-Specific Integrated Circuit). Figure 1 In one example, logic chip 6 can be integrated into semiconductor device 100. In other examples, logic chip 6 can be arranged externally to semiconductor device 100, particularly adjacent to semiconductor device 100 on the same printed circuit board. Logic chip 6 can therefore be considered or not be part of semiconductor device 100. Figure 1 In the example, MEMS sensor chip 4 and logic chip 6 are shown as two separate semiconductor chips. In other examples, the two chips may also be combined into a single integral component.

[0022] The portion of the chip carrier 2 with the extension 8 can be designed as an antenna. In one example, the antenna may be formed solely by the extension 8, while in another example, the extension 8 and at least a portion of the chip carrier 2 can serve as an antenna. The extension 8, designed as an antenna or as part of an antenna, can be constructed to optimize electromagnetic radiation emission. For example, viewed from above, the extension can have a herringbone, spiral, or coil-shaped extension. Figures 5 to 7 An exemplary extension of the extension according to the invention is shown and described in Figure 11.

[0023] The antenna formed by the extension element 8 can be designed to transmit signals detected by the MEMS sensor chip 4 and processed by the logic chip 6. Figure 1In one example, such a signal can be emitted upwards, with the radiation capable of having an opening angle of up to 180 degrees. In other examples, the signal can also be emitted in all directions. The radiation can vary in intensity depending on the direction. The operation of the antenna is not limited to a specific wireless communication technology. For example, the communication technology used can be based on at least one of the following: Wi-Fi, Bluetooth, ZigBee, UWB (Ultra-Wideband), 434MHz, high-frequency millimeter waves, etc.

[0024] The chip carrier 2 and the expansion component 8 can be formed as a single integrated unit. This in particular means that no contact resistance will occur during the transition from the chip carrier 2 to the expansion component 8 and vice versa. Contact resistance can be specified as the resistance generated at the contact points between components or materials when connecting them. Contact resistance can be caused by any type of connection used to connect different materials to each other, such as soldered connections, plug-in connections, circuit connections, wiring connections, etc. However, according to the present invention, the chip carrier 2 and the extension element 8 cannot be connected as a component in this manner, and therefore no contact resistance occurs. The monolithic assembly formed by the chip carrier 2 and the extension element 8 cannot be additively manufactured, but can be manufactured using subtractive manufacturing techniques. For example, the monolithic assembly can be made of the same, particularly homogeneous, material, such as... Figure 1 As shown and described in the examples.

[0025] The extension 8 can be formed, for example, by a bent portion of the chip carrier 2. The extension 8 can be bent outward from a mounting plane in which the MEMS sensor chip 4 is mounted. The chip carrier 2 can be bent such that the extension 8 and the mounting plane have sections that are opposite each other and extend substantially parallel to each other. The spacer 10 prevents mechanical contact between the chip carrier 2 and the extension 8. The spacer 10 can be made of, for example, any electrically insulating material. Figure 1 In this configuration, the chip carrier 2 can be bent so that the MEMS sensor chip 4 and the extension 8 can be arranged on the opposite surface of the chip carrier 2.

[0026] exist Figure 1In the example, extension 8 can be completely encapsulated by encapsulating material 12. Additionally, other components of the semiconductor device 100 can be embedded in encapsulating material 12. Encapsulating material 12 can thus form a housing for components of the semiconductor device 100, making it also refer to as a semiconductor encapsulation. Encapsulating material 12 can contain at least one of the following: molding compound, laminate, epoxy resin, filled epoxy resin, glass fiber filled epoxy resin, imide, thermoplastic, thermosetting polymer, polymer mixture. Encapsulating material 12 can particularly have an epoxy resin material or an epoxy resin matrix with filler. In one example, the filler may contain silicon oxide (SiO2), wherein encapsulating material 12 may have a dielectric constant of about 4 to about 4.2. In another example, the filler may contain aluminum oxide (AlO), wherein the dielectric constant of encapsulating material 12 may be in the range of about 5 to about 10.

[0027] Semiconductor device 100 can provide a small housing for high radiation frequencies. In the technological development of semiconductor devices, on the one hand, the frequency of the emitted electromagnetic waves is constantly increasing, and on the other hand, the size of the device housing is constantly decreasing. This difference can be compensated for by "electrical expansion of the housing" to make the physical housing size compatible with the wavelength used. Figure 1 In the example, this can be achieved by using the extender 8 as a physical extension of the structure that radiates electromagnetic waves. By using the extender 8, the current covers a longer path until it reaches the end of the formed antenna, which, from an electrical point of view, is equivalent to an extension of the housing.

[0028] Furthermore, compared to conventional semiconductor devices, semiconductor device 100 can be cheaper and more space-saving. In conventional semiconductor devices with the same function, the antenna can typically exist as a separate component. In contrast, in the case of the semiconductor device according to the invention, the antenna or radiating structure can be fully integrated into the semiconductor device. In this way, additional production costs for these individual components can be saved. Furthermore, space on the assembly circuit board can be saved, and enhanced system integration can be achieved.

[0029] Figure 2 The semiconductor device 200 may be at least partially similar to Figure 1 The semiconductor device 100 has the same function. (And) Figure 1 on the contrary, Figure 2 The semiconductor device 200 may additionally have an optional dielectric material 14, which may cover the extension 8 and may have a dielectric constant greater than 5. In one example, the dielectric material 14 may include an epoxy-based material having aluminum oxide as a filler, such as bonded... Figure 1As already described, the dielectric material 14 can be designed to increase the performance of the antenna formed by the extension 8 by adjusting its dielectric constant. Because the dielectric constant is increased compared to conventional molding compounds, the propagation speed of the waves radiated by the antenna can be reduced, which is equivalent to combining... Figure 2 The electrical expansion of the housing of the described semiconductor device 200. Figure 2 In the example, the dielectric material 14 may also have Figure 1 The function of spacer 10.

[0030] Figure 3 The semiconductor device 300 may be at least partially similar to the semiconductor device described above and have the same function. Unlike... Figure 2 , Figure 3 The semiconductor device 300 may additionally have a spacer 10 that can mechanically contact the top side of the chip carrier 2 and the bottom side of the dielectric material 14.

[0031] Figure 4 The semiconductor device 400 may be at least partially similar to the semiconductor device in the above figures. In contrast, Figure 4 The extension 8 can protrude at least partially from the encapsulating material 12. Figure 4 In one example, the mounting planes of the extension 8 and the chip carrier 2 can extend substantially perpendicular to each other. In other examples, the angle between the extension 8 and the mounting plane can be chosen differently depending on the geometry of the encapsulation material 12. The chip carrier 2 may, for example, include a lead frame, wherein the extension 8 can be formed by bent connecting conductors of the lead frame.

[0032] Figure 5 The semiconductor device 500 may be at least partially similar to the semiconductor device in the above figures. Figure 5 In the example, the chip carrier 2 can be implemented as a wire frame having one or more die pads and one or more connecting conductors. Multiple connecting conductors 16 can protrude from the encapsulation material 12 and provide electrical contact from outside the housing to the electronic components encapsulated by the encapsulation material 12. The semiconductor device 500 can be a "pin" package, particularly a "gull-wing" package. However, the semiconductor device according to this disclosure is not limited to a particular type of package. Figure 5 In the example, the extension 8 can be formed from the connecting conductor of the wire frame and can have a helical extension, i.e., it can form a helical antenna. The extension 8 can extend substantially parallel to the top side of the housing formed by the encapsulation material 12.

[0033] Figure 6 The semiconductor device 600 can be at least partially similar to Figure 5 The semiconductor device 500. Unlike... Figure 5 , Figure 6The spiral extension 8 can extend substantially perpendicular to the top side of the housing. In another example, the angle between the extension 8 and the top side of the housing can be selected to have any other different angle depending on the geometry of the encapsulation material 12.

[0034] Figure 7 The semiconductor device 700 illustrates another possible geometry of the extension 8. Figure 7 In the example, a portion of the chip carrier 2 can protrude from the rear side of the housing, and the section of the chip carrier 2 not covered by the encapsulation material 12 can form an extension 8. The extension 8 can be bent at an angle of approximately 90 degrees at three points. Based on the geometry of the extension 8, the semiconductor package 700 can have a scorpion shape.

[0035] Figure 8 The semiconductor device 800 may have a conductive chip carrier 2 and a MEMS sensor chip 4 mounted on its underside. Furthermore, a logic chip 6 may be disposed on the MEMS sensor chip 4. At least a portion of the chip carrier 2 may be designed as an antenna. In one example, the chip carrier 2 may have a rectangular shape when viewed from above. The chip carrier 2 and chips 4 and 6 may be at least partially encapsulated by an encapsulation material 12, which may have a dielectric constant greater than 5.

[0036] The encapsulation material 12 may comprise at least one of the following: molding compound, laminate, epoxy resin, filled epoxy resin, glass fiber filled epoxy resin, imide, thermoplastic, thermosetting polymer, or polymer mixture. The encapsulation material 12 may particularly have an epoxy resin material or an epoxy resin matrix with fillers. In one example, the filler may comprise alumina (AlO), wherein the dielectric constant of the encapsulation material 12 may be in the range of about 5 to about 10. Because the dielectric constant of the encapsulation material 12 is increased compared to conventional housing materials, the propagation speed of electromagnetic waves emitted by the antenna can be reduced, which is equivalent to that already bonded... Figure 1 The electrical expansion of the semiconductor device housing is described.

[0037] The semiconductor device 900 in Figure 9 can be regarded as Figure 8 A more detailed implementation of the semiconductor device 800. Therefore, with Figure 8The associated implementation can also be applied to FIG9, and vice versa. The semiconductor device 900 can be mounted on the circuit board 20, which may or may not be part of the semiconductor device 900. In the example of FIG9, the chip carrier 2 can have multiple connecting conductors 16. Connecting conductors 16A and 16B shown on the far right of FIG9 can be integrally formed with the chip carrier 2, while the remaining connecting conductors 16 can be electrically insulated from the chip carrier 2. The chip carrier 2 can be connected to ground potential or the ground plane 22 of the circuit board 20 via the connecting conductors 16A and 16B.

[0038] The chip carrier 2 can form at least a portion of an inverted F-shaped antenna. In Figure 9, the hot end 24 of the F-antenna can be arranged on the left, and the cold end 26 of the F-antenna can be arranged on the right. The cold end 26 can be connected to ground potential 22, while the HF (high frequency) voltage can reach its maximum at the hot end 24. The power amplifier (not shown) included in the logic chip 6 can be connected to ground potential 22 via a first electrical connection element 28A and a connection conductor 16A. Furthermore, the output of the power amplifier can be electrically connected to one of the remaining connection conductors 16 via a second electrical connection element 28B. During operation of the semiconductor device 900, the power amplifier can generate a high-frequency current loop, which is represented by an ellipse in Figure 9. In other words, the chip carrier 2 and the connection conductor electrically connected to the output of the power amplifier can form a conductor loop for the inverted F-antenna. The feed point 30 of the inverted F-antenna is... Figure 9A It is shown in the cross-sectional side view.

[0039] Figure 10 The method described herein is a method for manufacturing semiconductor devices. The method is presented in a general manner for the purpose of qualitatively describing various aspects of this disclosure. For simplicity, the method may have the following characteristics: Figure 10 Other aspects not shown or described in the figures. For example, the method can be extended by incorporating one or more aspects described in the foregoing figures.

[0040] At position 32, a conductive chip carrier can be formed. At position 34, a semiconductor chip can be mounted on the mounting plane of the chip carrier. At position 36, a portion of the chip carrier can be bent outward from the mounting plane, wherein at least one segment of the chip carrier having the bent portion can be designed as an antenna. Figure 10 The method can have other optional operations. For example, in another operation, after the chip carrier has been bent, the chip carrier and the semiconductor chip can be at least partially encapsulated by the encapsulation material.

[0041] Figure 11 contains Figure 11A and 11BThe figures illustrate method operations for manufacturing a semiconductor device according to the present disclosure. The upper figure of each figure shows a plan view of the corresponding method operation, while the lower figure shows a cross-sectional side view of the corresponding method operation. For example, the operation shown in Figure 11 could be... Figure 10 This is part of the method shown and described in the document.

[0042] exist Figure 11A A conductive chip carrier in the form of a lead frame 38 can be provided. The lead frame 38 may have die pads 40, multiple connecting conductors 16, and extensions 8. The lead frame 38 may be formed, for example, by stamping or etching a flat metal sheet. Specifically, the lead frame 38 and the extensions 8 can be manufactured by a subtractive process, in which material is removed from an initially unprocessed metal sheet. In other words, the extensions 8 are not added to or attached to the lead frame 38 in the sense of an additive process. Figure 11A In this example, the extension 8 may have a herringbone-shaped extension. In other examples, the shape of the extension 8 may be chosen differently, for example, in the form of a coil or a spiral.

[0043] exist Figure 11B In the middle, extension 8 can be bent outward from the assembly plane (see...). Figure 11A (The arrows in the image indicate that the extension 8 and the mounting plane or die pad 40 have sections that extend substantially parallel to each other, as shown in...) Figure 1 The method shown and illustrated is for simplicity and may include one or more other operations not shown in Figure 11. For example, one or more semiconductor chips may be mounted on die pad 40 in another method operation. Assembly may be performed before or after bending the extension 8 outward from the assembly plane. In yet another method operation, the components of this arrangement may be embedded in the encapsulation material.

[0044] The semiconductor device 1200 of Figure 12 may be at least partially similar to the semiconductor device in the above figures, for example... Figure 5 The semiconductor device 500. Unlike... Figure 5 The extension 8 in Figure 12 may have a herringbone-shaped extension. In one example, the extension 8 may protrude from the encapsulation material 12 and may not be covered by the encapsulation material. The extension 8 may extend substantially parallel to the top side of the housing formed by the encapsulation material 12. In another example, the extension 8 may be completely covered by or encapsulated by the encapsulation material 12.

[0045] Example

[0046] The following text explains the devices and methods based on examples.

[0047] Example 1 is a semiconductor device comprising: a semiconductor chip; a conductive chip carrier, wherein the semiconductor chip is mounted on the chip carrier; and a conductive extension mechanically connected to the chip carrier, wherein the extension and the chip carrier are formed as a single unit, wherein a portion of the chip carrier having the extension is designed as an antenna.

[0048] Example 2 is a semiconductor device according to Example 1, wherein the extension is formed by a curved portion of the chip carrier.

[0049] Example 3 is a semiconductor device according to Example 1 or 2, wherein the semiconductor chip is mounted on a mounting plane of the chip carrier, and the extension bends outward from the mounting plane.

[0050] Example 4 is a semiconductor device according to Example 3, wherein the extension and the mounting plane have opposing and substantially parallel extending sections.

[0051] Example 5 is a semiconductor device according to any one of the foregoing examples, wherein the extension has a meander or coil-shaped extension.

[0052] Example 6 is a semiconductor device according to any one of the foregoing examples, wherein the chip carrier includes a lead frame, and the extension is formed by a bent connecting conductor of the lead frame.

[0053] Example 7 is a semiconductor device according to any one of Examples 3 to 6, wherein the extension and the mounting plane extend substantially perpendicular to each other.

[0054] Example 8 is a semiconductor device according to any of the foregoing examples, wherein the semiconductor chip includes at least one MEMS structure, and the antenna is designed to transmit a signal detected by the MEMS structure.

[0055] Example 9 is a semiconductor device according to any of the foregoing examples, wherein the semiconductor chip and the extension are arranged on the opposing surface of the chip carrier.

[0056] Example 10 is a semiconductor device according to any one of the foregoing examples, further comprising: a packaging material, wherein the chip carrier and the semiconductor chip are at least partially encapsulated by the packaging material.

[0057] Example 11 is a semiconductor device according to Example 10, wherein the extension protrudes at least partially from the packaging material.

[0058] Example 12 is a semiconductor device according to Example 10, wherein the extension is completely encapsulated by the encapsulation material.

[0059] Example 13 is a semiconductor device according to any one of Examples 3 to 12, further comprising: a spacer, wherein the spacer is disposed between the extension and the mounting plane and mechanically contacts the extension and the mounting plane.

[0060] Example 14 is a semiconductor device according to any one of the preceding examples, further comprising: a dielectric material covering the extension, wherein the dielectric material has a dielectric constant greater than 5.

[0061] Example 15 is a method of manufacturing a semiconductor device, the method comprising: generating a conductive chip carrier; mounting a semiconductor chip on a mounting plane of the chip carrier; and bending a portion of the chip carrier outward from the mounting plane, wherein at least one segment of the chip carrier having the bent portion is designed as an antenna.

[0062] Example 16 is the method according to Example 15, further comprising: after bending the chip carrier, at least partially encapsulating the chip carrier and the semiconductor chip with an encapsulation material.

[0063] Example 17 is a semiconductor device comprising: a conductive chip carrier; a semiconductor chip on a mounting chip carrier; and an encapsulation material, wherein the chip carrier and the semiconductor chip are at least partially encapsulated by the encapsulation material, wherein at least a portion of the chip carrier is designed as an antenna, and wherein the encapsulation material has a dielectric constant greater than 5.

[0064] Example 18 is a semiconductor device according to Example 17, wherein the encapsulation material comprises an epoxy resin material filled with aluminum oxide.

[0065] Example 19 is a semiconductor device according to Example 17 or 18, wherein the chip carrier forms at least a portion of an inverted-F antenna.

[0066] Example 20 is a semiconductor device according to Example 19, wherein the chip carrier includes a connecting conductor, wherein the chip carrier is connected to ground potential, and wherein the chip carrier and the connecting conductor form a conductor loop of the inverted-F antenna.

[0067] Although specific embodiments have been shown and described herein, it will be apparent to those skilled in the art that various alternatives and / or equivalent implementations may be made in place of the specific embodiments shown and described without departing from the scope of this disclosure. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this disclosure be limited only by examples and their equivalents.

Claims

1. A semiconductor device, comprising: Semiconductor chips (4, 6); A conductive chip carrier (2), wherein the semiconductor chips (4, 6) are mounted on the bottom surface of the chip carrier (2); and A conductive extension member (8) mechanically connected to the chip carrier (2), wherein the extension member (8) and the chip carrier (2) are formed as a single integrated unit. The portion of the chip carrier (2) having the extension (8) is designed as an antenna, wherein the antenna has a section extending above the top surface of the chip carrier (2) opposite the bottom surface.

2. The semiconductor device according to claim 1, wherein the extension (8) is formed from a curved portion of the chip carrier (2).

3. The semiconductor device according to claim 1 or 2, wherein the semiconductor chip (4, 6) is mounted on the mounting plane of the chip carrier (2), and the extension (8) bends outward from the mounting plane.

4. The semiconductor device according to claim 3, wherein the extension (8) and the mounting plane have opposing and substantially parallel segments.

5. The semiconductor device according to any one of the preceding claims, wherein the extension (8) has a meander or coil-shaped extension.

6. The semiconductor device according to any one of the preceding claims, wherein the chip carrier (2) comprises a wire frame, and the extension (8) is formed by a bent connecting conductor (16) of the wire frame.

7. The semiconductor device according to any one of claims 3 to 6, wherein the extension (8) and the mounting plane extend substantially perpendicular to each other.

8. The semiconductor device according to any one of the preceding claims, wherein the semiconductor chip (4, 6) includes at least one MEMS structure, and the antenna is designed to transmit a signal detected by the MEMS structure.

9. The semiconductor device according to any one of the preceding claims, wherein the semiconductor chip (4, 6) and the extension member (8) are arranged on the opposing surface of the chip carrier (2).

10. The semiconductor device according to any one of the preceding claims, further comprising: The encapsulation material (12) is used to encapsulate the chip carrier (2) and the semiconductor chips (4, 6) at least partially.

11. The semiconductor device of claim 10, wherein the extension (8) protrudes at least partially from the encapsulation material (12).

12. The semiconductor device of claim 10, wherein the extension (8) is completely encapsulated by the encapsulation material (12).

13. The semiconductor device according to any one of claims 3 to 12, further comprising: Spacer (10), wherein the spacer (10) is arranged between the extension (8) and the mounting plane and mechanically contacts the extension (8) and the mounting plane.

14. The semiconductor device according to any one of the preceding claims, further comprising: The dielectric material (14) covering the extension (8) has a dielectric constant greater than 5.

15. A method of manufacturing a semiconductor device, wherein the method comprises: Generate a conductive chip carrier (2); Semiconductor chips (4, 6) are mounted on the mounting plane of the chip carrier (2); as well as A portion of the chip carrier (2) is bent outward from the mounting plane, wherein at least one segment of the chip carrier (2) having the bent portion is designed as an antenna having a segment extending above the top surface of the chip carrier (2) opposite to the mounting plane.

16. The method of claim 15, further comprising: After bending the chip carrier (2), the chip carrier (2) and the semiconductor chips (4, 6) are at least partially encapsulated by the encapsulation material (12).

17. A semiconductor device, comprising: Conductive chip carrier (2); Semiconductor chips (4, 6) mounted on the bottom surface of the chip carrier (2); and The encapsulation material (12) is used, wherein the chip carrier (2) and the semiconductor chips (4, 6) are at least partially encapsulated by the encapsulation material (12). At least a portion of the chip carrier (2) is designed as an antenna, and The encapsulation material (12) has a dielectric constant greater than 5. The antenna has a section extending above the top surface of the chip carrier (2) opposite the bottom surface.

18. The semiconductor device of claim 17, wherein the packaging material (12) comprises an epoxy resin material filled with alumina.

19. The semiconductor device according to claim 17 or 18, wherein the chip carrier (2) forms at least a portion of the inverted F antenna.

20. The semiconductor device of claim 19, wherein the chip carrier (2) includes a connecting conductor (16), wherein the chip carrier (2) is connected to ground potential (22), wherein the chip carrier (2) and the connecting conductor (16) form a conductor loop of the inverted F antenna.

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