Display substrate, display device and manufacturing method
By setting a visible light antireflection film on the black matrix layer, the problem of low light signal utilization of optical sensor devices in the prior art is solved, the sensitivity of optical fingerprint recognition is improved, and the amount of light entering the optical sensor device is enhanced.
Patent Information
- Application Number
- CN202111271578.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-10-29
- Publication Date
- 2026-03-03
- Estimated Expiration
- 2041-10-29
AI Technical Summary
In existing fingerprint recognition technologies, optical sensors can only receive a single wavelength of light reflected from the finger, resulting in a weak light signal and low light signal utilization, which affects the sensitivity of fingerprint recognition.
A visible light anti-reflection coating is placed at the optical sensor position in the black matrix layer to enhance the amount of light entering the optical sensor. The utilization rate of light is improved by opening a second opening in the black matrix layer and placing a visible light anti-reflection coating thereon.
It improves the light signal intensity of the optical sensor, enhances the sensitivity of optical fingerprint recognition, and reduces visible light loss.
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Figure CN113990911B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of fingerprint recognition technology. More specifically, it relates to a display substrate, a display device, and a method for manufacturing the substrate. Background Technology
[0002] Currently, existing fingerprint recognition technologies often utilize BM (black matrix layer) + CF (filter film) to form the collimated optical path for fingerprint recognition. Due to the filtering properties of the filter film, in an optical fingerprint recognition structure consisting of a set of RGB pixels + OPD (Organic Photodiode Diode), the OPD of the optical sensor can only receive one type of light reflected from the finger, such as the green light emitted by the G pixel. Other wavelengths of light suffer from light loss, resulting in a weaker light signal received by the optical sensor. Summary of the Invention
[0003] The purpose of this invention is to provide a display substrate, a display device, and a manufacturing method to solve at least one of the problems existing in the prior art.
[0004] To achieve the above objectives, the present invention adopts the following technical solution:
[0005] The first aspect of the present invention provides a display substrate, comprising:
[0006] Substrate;
[0007] Multiple optical fingerprint recognition structures arranged in an array on the substrate, each optical fingerprint recognition structure including a display area and a sensing area, the display area including a light-emitting device, and the sensing area including an optical sensor.
[0008] A black matrix layer is disposed on the side of the array of multiple optical fingerprint recognition structures facing away from the substrate; wherein the black matrix layer has multiple first openings and multiple second openings, the projection of the first opening on the substrate overlaps with the projection of the light-emitting device on the substrate, the projection of the second opening on the substrate overlaps with the projection of the optical sensor on the substrate, a visible light anti-reflection film or a filter film is disposed in the first opening, and a visible light anti-reflection film is disposed in the second opening.
[0009] In one specific embodiment, the visible light antireflection film includes at least two dielectric layers and a metal layer located between adjacent dielectric layers.
[0010] In one specific embodiment, the dielectric layer is made of silicon dioxide or silicon nitride, and the metal layer is made of titanium or aluminum.
[0011] In one specific embodiment, the visible light antireflection film comprises three dielectric layers and two metal layers.
[0012] In one specific embodiment, the projection of the first opening on the substrate coincides with the projection of the light-emitting device on the substrate, and the projection of the second opening on the substrate coincides with the projection of the optical sensor on the substrate.
[0013] In one specific embodiment, the optical sensor includes a first electrode, a first hole transport layer, an organic photodiode, a first electron transport layer, and a second electrode stacked together.
[0014] In one specific embodiment, the light-emitting device includes an anode, a second hole transport layer, a light-emitting layer, a second electron transport layer, and a cathode stacked together, wherein the second electrode reuses the cathode.
[0015] In one specific embodiment, the first electrode and the anode are disposed in the same layer, the first hole transport layer and the second hole transport layer are disposed in the same layer, and the first electron transport layer and the second electron transport layer are disposed in the same layer.
[0016] A second aspect of the present invention provides a display device including the display substrate described above.
[0017] A third aspect of the present invention provides a method for preparing a display substrate, comprising:
[0018] Multiple optical fingerprint recognition structures are formed in an array on a substrate, wherein the optical fingerprint recognition structure includes a display area and a sensing area, the display area includes a light-emitting device, and the sensing area includes an optical sensor.
[0019] A black matrix layer is formed on the array of multiple optical fingerprint recognition structures; wherein the black matrix layer has multiple first openings and multiple second openings, the projection of the first opening on the substrate overlaps with the projection of the light-emitting device on the substrate, the projection of the second opening on the substrate overlaps with the projection of the optical sensor on the substrate, a visible light anti-reflection film or a filter film is disposed in the first opening, and a visible light anti-reflection film is disposed in the second opening.
[0020] The beneficial effects of this invention are as follows:
[0021] The technical solution of the present invention reduces visible light loss, improves the utilization rate of visible light and the amount of light entering the optical sensor by setting a visible light anti-reflection film at the position of the optical sensor device corresponding to the optical fingerprint recognition structure integrated in the display substrate, thereby increasing the light signal intensity of the optical sensor device and enhancing the sensitivity of optical fingerprint recognition. Attached Figure Description
[0022] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings.
[0023] Figure 1 A schematic cross-sectional view of an existing display substrate is shown.
[0024] Figure 2 This diagram shows a cross-sectional schematic of a display substrate according to an embodiment of the present invention.
[0025] Figure 3 A cross-sectional schematic diagram of an optical sensor component according to an embodiment of the present invention is shown.
[0026] Figure 4 A schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention is shown.
[0027] Figure 5 A schematic cross-sectional view of the visible light antireflection film composition according to an embodiment of the present invention is shown.
[0028] Figure 6 This diagram illustrates the relationship between the transmittance of a visible light antireflective film according to an embodiment of the present invention and the wavelength of visible light.
[0029] Figure 7 This diagram illustrates the relationship between the reflectance of a visible light antireflection film according to an embodiment of the present invention and the wavelength of visible light.
[0030] Figure 8 The curves showing the relationship between the sensing current of the organic photodiode, the voltage between the first and second electrodes, and red, green, and blue light are illustrated. Detailed Implementation
[0031] To more clearly illustrate this application, the following description, in conjunction with embodiments and accompanying drawings, further clarifies the application. Similar components in the drawings are indicated by the same reference numerals. Those skilled in the art should understand that the specific description below is illustrative rather than restrictive and should not be construed as limiting the scope of protection of this application.
[0032] In this invention, "on," "formed on," and "set on" can mean that one layer is directly formed or set on another layer, or that one layer is indirectly formed or set on another layer, meaning that there are other layers between the two layers.
[0033] It should be noted that although the terms "first," "second," etc., may be used herein to describe various components, members, elements, regions, layers, and / or portions, these components, members, elements, regions, layers, and / or portions should not be limited by these terms. Rather, these terms are used to distinguish one component, member, element, region, layer, and / or portion from another. Thus, for example, the first component, first member, first element, first region, first layer, and / or first portion discussed below may be referred to as a second component, second member, second element, second region, second layer, and / or second portion without departing from the teachings of the invention.
[0034] In this invention, unless otherwise stated, the term "co-layer arrangement" refers to two layers, components, members, elements, or portions that can be formed using the same fabrication process (e.g., patterning process), and that these two layers, components, members, elements, or portions are generally formed of the same material. For example, co-layer arrangement of two or more functional layers means that these co-layer functional layers can be formed using the same material layers and the same fabrication process, thereby simplifying the fabrication process of the display substrate, and they are not necessarily located on the same horizontal plane in the cross-sectional view.
[0035] In this invention, unless otherwise stated, the term "patterning process" generally includes steps such as photoresist coating, exposure, development, etching, and photoresist stripping. The term "one-step patterning process" refers to a process of forming patterned layers, components, or parts using a single photomask.
[0036] Currently, such as Figure 1 As shown, existing fingerprint recognition technologies often utilize BM (black matrix layer) + CF (filter film) to form the collimated optical path for fingerprint recognition. Due to the filtering property of the filter film, in an optical fingerprint recognition structure consisting of a set of RGB pixels + OPD, the OPD of the optical sensor can only receive one type of light reflected from the finger. For example... Figure 1 If the filter film above the OPD can only transmit green light, then the OPD can only receive green light. There is light loss in other wavelengths, and the optical signal received by the optical sensor is weak.
[0037] In view of this, embodiments of the present invention provide a display substrate, the display substrate comprising:
[0038] Substrate;
[0039] Multiple optical fingerprint recognition structures arranged in an array on the substrate, each optical fingerprint recognition structure including a display area and a sensing area, the display area including a light-emitting device, and the sensing area including an optical sensor.
[0040] A black matrix layer is disposed on the side of the array of multiple optical fingerprint recognition structures facing away from the substrate; wherein the black matrix layer has multiple first openings and multiple second openings, the projection of the first opening on the substrate overlaps with the projection of the light-emitting device on the substrate, the projection of the second opening on the substrate overlaps with the projection of the optical sensor on the substrate, a visible light anti-reflection film or a filter film is disposed in the first opening, and a visible light anti-reflection film is disposed in the second opening.
[0041] Compared with existing fingerprint recognition, the embodiments of the present invention provide a visible light anti-reflection film in the second opening of the corresponding optical sensor in the black matrix layer. As a result, the fingerprint recognition collimation optical path in the embodiments of the present invention can increase the amount of light incident on the optical sensor, improve the utilization rate of visible light and the amount of light incident on the optical sensor, and enhance the sensitivity of optical fingerprint recognition.
[0042] Those skilled in the art will understand that in the optical fingerprint recognition structure of this embodiment, the ratio of the number of light-emitting devices to optical sensor devices is not limited. For example, one optical sensor device and three light-emitting devices surrounding it (each of the three pixels, red, green, and blue, is a light-emitting device) can be considered as one optical fingerprint recognition structure, or one optical sensor device and four light-emitting devices surrounding it can be considered as one optical fingerprint recognition structure. The first opening corresponds one-to-one with the light-emitting devices, and the second opening corresponds one-to-one with the optical sensor devices.
[0043] In one possible implementation, the projection of the first opening onto the substrate coincides with the projection of the light-emitting device onto the substrate, and the projection of the second opening onto the substrate coincides with the projection of the optical sensor onto the substrate.
[0044] In one possible implementation, the visible light antireflection film comprises at least two dielectric layers and a metal layer located between adjacent dielectric layers. Further, the visible light antireflection film comprises three dielectric layers and two metal layers, which provides good antireflection and antireflection effects and simplifies the fabrication process.
[0045] In one possible implementation, the dielectric layer is made of silicon dioxide (SiO2) or silicon nitride (Si3N4), and the metal layer is made of titanium (Ti) or aluminum (Al), resulting in high transmittance. The metal layer can also be made of molybdenum (Mo), etc. Hereafter, the description will assume the dielectric layer is made of silicon dioxide (SiO2) and the metal layer is made of titanium (Ti).
[0046] In one possible implementation, the optical sensor includes a first electrode, a first hole transport layer, an organic photodiode, a first electron transport layer, and a second electrode stacked together. Further, the light-emitting device includes an anode, a second hole transport layer, a light-emitting layer, a second electron transport layer, and a cathode stacked together, with the second electrode multiplexing the cathode. Further, the first electrode and the anode are disposed in the same layer, the first hole transport layer and the second hole transport layer are disposed in the same layer, and the first electron transport layer and the second electron transport layer are disposed in the same layer.
[0047] In a specific example, such as Figure 2 As shown, the display substrate provided in this embodiment of the invention includes:
[0048] Substrate 100;
[0049] Multiple optical fingerprint recognition structures are arranged in an array on the substrate 100. Each optical fingerprint recognition structure includes a display area and a sensing area. The display area includes a light-emitting device, and the sensing area includes an optical sensor.
[0050] A black matrix layer 114 is disposed on the side of the array of multiple optical fingerprint recognition structures opposite to the substrate 100. The black matrix layer 114 has multiple first openings and multiple second openings. The projection of the first opening onto the substrate 100 coincides with the projection of the light-emitting device onto the substrate 100, and the projection of the second opening onto the substrate 100 coincides with the projection of the optical sensor onto the substrate 100. A light filter 115 is disposed within the first opening, and a visible light anti-reflection film 116 is disposed within the second opening. The display effect is better when the light filter 115 is disposed within the first opening. Alternatively, a visible light anti-reflection film can also be disposed within the first opening, as the structure and process for disposing of the visible light anti-reflection film within the first opening are relatively simple. Those skilled in the art will understand that… Figure 2 This is just one example; in reality, the location and structure of optical sensor devices are not limited to... Figure 2 As shown, the optical sensor device only needs to be located between the substrate 100 and the black matrix layer 114.
[0051] The following is based on Figure 2 The display substrate and its preparation method according to an embodiment of the present invention will be described using an example.
[0052] Step S1: Provide a substrate 100. For example, when the display substrate is a flexible display substrate, the provided substrate 100 can be polyimide (PI), polyethylene naphthalate (PEN), thermoplastic polyester (PET), etc.; when the display substrate is a rigid display substrate, the substrate 100 can be a rigid material such as glass or quartz.
[0053] Step S2, forming the driving circuit layer or thin-film transistor layer, includes:
[0054] An active layer 101 is formed on a substrate 100 using a patterning process; a gate insulating layer 102 is formed on the active layer 101 by deposition or the like; a gate 103 is formed on the gate insulating layer 102 using a patterning process; an interlayer dielectric layer 104 is formed on the gate by deposition or the like; and then, the interlayer dielectric layer 104 is etched to form a via exposing the active layer 101.
[0055] After the via is formed in the interlayer dielectric layer 104, the source 105A and the drain 105B are formed.
[0056] The active layer 101 can be made of materials such as polycrystalline silicon and metal oxides, the gate insulating layer 102 can be made of inorganic insulating materials such as silicon oxide, silicon nitride, or silicon oxynitride, and the interlayer dielectric layer 104 can be made of inorganic insulating materials such as silicon oxide, silicon nitride, or silicon oxynitride. The gate material includes metals or alloys such as aluminum, titanium, and cobalt. During fabrication, a gate material layer is first formed using methods such as sputtering or evaporation, and then a patterning process is performed on the gate material layer to form a patterned gate 103.
[0057] In addition, before forming the active layer 101, a barrier layer (not shown in the figure) and a buffer layer (not shown in the figure) can be formed on the substrate 100. For example, the barrier layer and the buffer layer can be formed on the entire surface of the substrate 100. The barrier layer can be made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and the buffer layer can also be made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. The barrier layer helps to prevent water and oxygen from entering the display substrate formed after it has been deposited from the bottom. The buffer layer helps to improve the quality of subsequent material deposition.
[0058] The embodiments of the present invention do not limit the materials of each functional layer, and the materials of each functional layer are not limited to the examples described above. The fabrication of the thin-film transistor structure is now complete.
[0059] Those skilled in the art will understand that the above-described thin-film transistor uses a top-gate structure as an example, but the present invention is not limited thereto, and a bottom-gate structure is also included within the scope of the present invention.
[0060] Step S3: Form planarization layer 106.
[0061] Specifically, a planarization layer material, such as an organic material, with a thickness of about 1 to 3 μm is deposited to cover the above-mentioned film layers. Then, a patterning process is used to pattern the film layers to form an opening at the position corresponding to the other of the above-mentioned source and drain electrodes (the source electrode in the figure).
[0062] Step S4, forming the light-emitting device and optical sensor, including:
[0063] Step S41: Deposit the anode layer metal of the display substrate in the opening of the planarization layer 106 and pattern it to form the anode 108 (the anode 108 is connected to the source 105A) of the light-emitting device in the display area and the first electrode of the optical sensor in the sensing area. For example, the materials of the anode and the first electrode include metal oxides such as ITO and IZO or metals such as Ag, Al, and Mo or their alloys.
[0064] Step S42: Form a pixel defining layer 107 around the anode and the first electrode using a patterning process. Specifically, deposit a pixel defining layer material, for example, with a thickness of about 1 to 2 μm. Form the pixel defining layer 107 in the display area and the sensing area using a patterning process. For example, the material of the pixel defining layer may include negative photoresist, polyimide, epoxy resin and other organic insulating materials.
[0065] Step S43: A light-emitting device layer 109 is formed on the anode 108 in the opening of the pixel-defining layer of the display area by inkjet printing or vapor deposition, and an optical sensor layer 110 is formed on the first electrode in the opening of the pixel-defining layer of the sensing area. The light-emitting device layer 109 includes a second hole transport layer (HTL), a light-emitting layer (EML), and a second electron transport layer (ETL). The optical sensor layer 110 includes a first hole transport layer (HTL), an organic photodiode (OPD), and a first electron transport layer (ETL). The first hole transport layer of the optical sensor layer 110 and the second hole transport layer of the light-emitting device layer 109 are co-located or fabricated using the same process. Similarly, the first electron transport layer of the optical sensor layer 110 and the second electron transport layer of the light-emitting device layer 109 are co-located or fabricated using the same process. Additionally, the light-emitting device layer 109 may also include one or more auxiliary light-emitting layers such as a hole injection layer (HIL), an electron blocking layer (EBL), a hole blocking layer (HBL), and an electron injection layer (EIL). The auxiliary light-emitting layer may be, for example, an organic material layer.
[0066] Step S44: Forming cathode 112. Cathode 112 is formed on the entire surface of the display substrate, for example. The cathode material may include metals such as Mg, Ca, Li or Al or their alloys, or metal oxides such as IZO or ZTO, or organic materials with conductive properties such as PEDOT / PSS (poly(3,4-ethylenedioxythiophene / polystyrene sulfonate). The optical sensor device includes a first electrode, an optical sensor layer 110 and a second electrode. The light-emitting device includes an anode 108, a light-emitting device layer 109 and a cathode. The second electrode of the optical sensor device is reused from the cathode 112.
[0067] In this configuration, the anodes corresponding to each pixel (i.e., the light-emitting device layer 109) and the optical sensor layer 110 are isolated from each other, while the cathodes corresponding to each pixel and the optical sensor layer 110 are connected to each other.
[0068] Step S5: Forming the encapsulation layer 113. For example, the encapsulation layer 113 may include a first inorganic encapsulation layer (not shown in the figure), an organic encapsulation layer (not shown in the figure), and a second inorganic encapsulation layer (not shown in the figure) stacked together. The first and second inorganic encapsulation layers can be formed by deposition or other methods. The organic encapsulation layer can be formed by inkjet printing. The first and second inorganic encapsulation layers can be formed using inorganic materials such as silicon nitride, silicon oxide, and silicon oxynitride, while the organic encapsulation layer can be formed using organic materials such as polyimide (PI) and epoxy resin. Thus, the first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer form a composite encapsulation layer. This composite encapsulation layer provides multiple layers of protection for the functional structures of the display area and the sensing area, resulting in better encapsulation performance.
[0069] Step S6: Deposit a black matrix layer 114 on the encapsulation layer 113. After deposition, pattern the black matrix layer 114 to form a plurality of first openings and a plurality of second openings (only two first openings and one second opening are shown in the figure). The projection of the first opening on the substrate 100 coincides with the projection of the light-emitting device layer 109 on the substrate 100. The projection of the second opening on the substrate 100 coincides with the projection of the optical sensor layer 110 on the substrate 100. A filter film 115 is disposed in the first opening and a visible light anti-reflection film 116 is disposed in the second opening.
[0070] In some embodiments of the present invention, other necessary functional film layers may be formed in the display area and the sensing area as needed, such as storage capacitors in the display area. These film layers can be formed using conventional methods, which will not be described in detail here.
[0071] Understandably, the black matrix layer 114 should have components such as a cover plate. Figure 2 (Not shown in the image). Therefore, Figure 2 The middle finger is touching above the black matrix layer 114.
[0072] In a specific example, such as Figure 3 As shown, the optical sensor includes: a first electrode disposed in the same layer as the anode 108. Figure 3 (shown as reference numeral 108 in the attached figures), first hole transport layer 1101, organic photodiode (OPD) 1102, first electron transport layer 1103, and second electrode of multiplexed cathode 112. Figure 3 (As shown by reference numeral 112 in the attached figure). Figure 4As shown, the light-emitting device includes: a stacked anode 108, a second hole transport layer 1091, a light-emitting layer 1092, a second electron transport layer 1093, and a cathode 112. The anode 108 and the first electrode are, for example, stacked layers of indium tin oxide (ITO), silver (Ag), and indium tin oxide (ITO) materials. The organic photodiode exhibits band selectivity; one type is a narrow-band response device, exhibiting a strong response within a certain wavelength range and a relatively weak response in other bands; the other type is a full-band response device, exhibiting high response across the entire wavelength range, with increased current and signal strength as light intensity increases. The appropriate type can be selected based on actual needs.
[0073] like Figure 5 As shown, in one specific embodiment, the visible light antireflection film 116 includes: three dielectric layers, such as silicon dioxide (SiO2), and a metal layer, such as titanium (Ti), located between adjacent dielectric layers. The dielectric and metal layers of the visible light antireflection film 116 can be prepared by a stacked deposition and exposure etching process.
[0074] The visible light antireflective coating with a multilayer stacked structure of silicon dioxide (SiO2) and titanium (Ti) used in this embodiment has the advantages of full-band antireflection and full-band high transmittance. Figure 6 and Figure 7 As shown, the average transmittance of visible light in the 380-780nm wavelength range is 57.7%, and the reflectance is 1.69%. The transmittance and reflection bands can be adjusted by changing the thickness or material of the metal layer and the dielectric layer. The curves showing the correspondence between the sensing current I, the voltage V between the first and second electrodes, and red, green, and blue light in the organic photodiode are also shown. R Q G Q B like Figure 8 As shown.
[0075] Because the photocurrent of devices under the same RGB illumination intensity is similar, organic photodiodes receive light across the entire wavelength range; that is, the light from all RGB pixels can be received by the organic photodiode. Figure 2 As shown, the light from both pixels, after being reflected by the finger, can be incident on the organic photodiode. Therefore, the organic photodiode can receive more finger valley / ridge illumination, reduce visible light loss, increase the amount of visible light incident on the optical sensor, improve the utilization rate of visible light and the amount of light entering the optical sensor, increase the light signal intensity, and thus enhance the sensitivity of optical fingerprint recognition.
[0076] Another embodiment of the present invention provides a display device including the above-described display substrate. The display device can be any product or component with display function, such as electronic paper, mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator; this embodiment does not limit this.
[0077] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. For those skilled in the art, other variations or modifications can be made based on the above description. It is impossible to exhaustively list all the implementation methods here. All obvious variations or modifications derived from the technical solutions of the present invention are still within the protection scope of the present invention.
Claims
1. A display substrate, characterized by, The display substrate comprises: a substrate; a plurality of optical fingerprint identification structures arranged in an array on the substrate, the optical fingerprint identification structure comprising a display area and a sensing area, the display area comprising a light emitting device, and the sensing area comprising an optical sensor device; a black matrix layer arranged on a side of the plurality of optical fingerprint identification structures away from the substrate; wherein the black matrix layer is provided with a plurality of first openings and a plurality of second openings, a projection of the first opening on the substrate and a projection of the light emitting device on the substrate overlap each other, a projection of the second opening on the substrate and a projection of the optical sensor device on the substrate overlap each other, a visible light anti-reflection film or a filter film is arranged in the first opening, and a visible light anti-reflection film is arranged in the second opening. The visible light anti-reflection film comprises at least two dielectric layers and a metal layer between adjacent dielectric layers. The material of the dielectric layer is silicon dioxide or silicon nitride, and the material of the metal layer is titanium or aluminum. The visible light anti-reflection film comprises three dielectric layers and two metal layers. The projection of the first opening on the substrate and the projection of the light emitting device on the substrate coincide, and the projection of the second opening on the substrate and the projection of the optical sensor device on the substrate coincide. The optical sensor device comprises a first electrode, a first hole transport layer, an organic photodiode, a first electron transport layer and a second electrode arranged in layers. The organic photodiode has wavelength selectivity.
2. The display substrate of claim 1, wherein, The light emitting device comprises an anode, a second hole transport layer, a light emitting layer, a second electron transport layer and a cathode arranged in layers, and the second electrode is multiplexed with the cathode. 3.The display substrate of claim 2, wherein, The first electrode is arranged in the same layer as the anode, the first hole transport layer is arranged in the same layer as the second hole transport layer, and the first electron transport layer is arranged in the same layer as the second electron transport layer.
4. A display device, characterized by comprising: The display substrate comprises any one of claims 1-3.
5. A method for manufacturing the display substrate according to any one of claims 1 to 3, characterized by, The display substrate comprises: forming a plurality of optical fingerprint identification structures arranged in an array on a substrate, wherein the optical fingerprint identification structure comprises a display area and a sensing area, the display area comprising a light emitting device, and the sensing area comprising an optical sensor device; forming a black matrix layer on the plurality of optical fingerprint identification structures arranged in an array; wherein the black matrix layer is provided with a plurality of first openings and a plurality of second openings, a projection of the first opening on the substrate and a projection of the light emitting device on the substrate overlap each other, a projection of the second opening on the substrate and a projection of the optical sensor device on the substrate overlap each other, a visible light anti-reflection film or a filter film is arranged in the first opening, and a visible light anti-reflection film is arranged in the second opening. The visible light anti-reflection film comprises at least two dielectric layers and a metal layer between adjacent dielectric layers.
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