Memory device and operating method thereof

By controlling the threshold voltage of the memory cell using hole injection and electronic charging methods respectively, the problem of slow programming and erasing speeds in memory devices is solved, achieving efficient data storage operations suitable for portable electronic devices.

CN114078525BActive Publication Date: 2025-10-21SK HYNIX INC
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Patent Information

Application Number
CN202110318367.8
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-08-10
Filing Date
2021-03-25
Publication Date
2025-10-21
Estimated Expiration
2041-03-25

AI Technical Summary

Technical Problem

Existing memory devices suffer from slow programming and erasing operations, especially non-volatile memory devices which perform poorly in writing and reading speeds, while still needing to retain data during power outages.

Method used

The threshold voltage of the memory cell is reduced during the programming operation by using hole injection, and the threshold voltage of the memory cell is increased during the erasure operation by using electronic charging, thus realizing the programming and erasure operations respectively.

Benefits of technology

It improves the programming and erasing speed of memory devices, enhances the stability and reliability of data storage, and meets the high information access speed and low power consumption requirements of portable electronic devices in ubiquitous computing environments.

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Abstract

A memory device and an operating method thereof are provided. The memory device includes a memory block including a plurality of memory cells, and a peripheral circuit for performing a program operation and an erase operation on the memory block. The program operation is performed by using a hole injection method, and the erase operation is performed by using an electron charging method. The plurality of memory cells are programmed when a threshold voltage of each of at least some of the plurality of memory cells is lowered below a set level in the program operation, and the plurality of memory cells are erased when a threshold voltage of each of the plurality of memory cells is increased to the set level or higher in the erase operation.
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