Near infrared photosensitivity controller and display device using the same

Abstract

The present application provides a near-infrared photosensitive controller, comprising: a substrate; a plurality of scan lines and a plurality of signal lines located on the substrate, the plurality of signal lines being insulated and crossed with the plurality of scan lines; a plurality of thin film transistors located on the substrate, the gate of each thin film transistor being connected to a scan line, and the source being connected to a signal line; a plurality of photodiodes arranged in a matrix, the plurality of photodiodes being arranged one-to-one with the plurality of thin film transistors, each photodiode being connected to a thin film transistor, and each photodiode being electrically conductive with the thin film transistor under the irradiation of near-infrared light; and a plurality of shading material units, each shading material unit covering at least one photodiode, which is used to allow near-infrared light to pass through but visible light to not pass through. The present application also provides a display device using such a near-infrared photosensitive controller. The display device of the present application can use infrared light for non-contact and long-distance control operations.

Description

Technical Field

[0001] The present application relates to the field of display, and in particular to a near-infrared photosensitivity controller and a display device using the near-infrared photosensitivity controller. Background Art

[0002] With the continuous development of the Internet of Everything, 5G commercial use, and smart living, consumers' demands for large-screen display devices have shifted from the past image quality, sound effects, systems, etc. to interconnected smart living interactions. At present, the intelligent recognition of people and objects and convenient human-computer interaction of large-screen display devices such as home TVs and office smart electronic whiteboards have become the focus of competition in large-screen displays. At present, the interaction of home TVs mostly uses remote controls to move items from top to bottom or from left to right, or simple voice input, which cannot make fast and accurate selections and input controls, and the human-computer interaction experience is not ideal; commercial electronic whiteboard interactions mostly use touch technology to realize contact writing and other functions, but cannot realize non-contact or long-distance control, and the experience is poor. Summary of the invention

[0003] A first aspect of an embodiment of the present application provides a near-infrared photosensitivity controller, comprising:

[0004] Base material;

[0005] A plurality of scanning lines are located on the substrate, extending along a first direction and spaced parallel to each other;

[0006] A plurality of signal lines are located on the substrate, extending along the second direction and spaced apart from each other in parallel, and the plurality of signal lines are insulated and cross-linked with the plurality of scanning lines;

[0007] A plurality of thin film transistors are located on the substrate and arranged in a plurality of rows along the first direction and a plurality of columns along the second direction, a gate of each thin film transistor is connected to a scan line, a source is connected to a signal line, gates of thin film transistors located in the same row are connected to the same scan line, and sources of thin film transistors located in the same column are connected to the same signal line;

[0008] A plurality of photodiodes arranged in a matrix, located on the substrate, the plurality of photodiodes being arranged in one-to-one correspondence with the plurality of thin film transistors, each photodiode being connected to a drain of a thin film transistor, each photodiode being electrically connected to the drain of the thin film transistor under irradiation of near-infrared light, and the drain connected to the photodiode shielding the photodiode to prevent light from the substrate side from irradiating the photodiode; and

[0009] A plurality of shading material units are arranged one by one corresponding to the plurality of photodiodes, each shading material unit at least covers a side of each photodiode away from the substrate, and the shading material unit is used to allow near-infrared light to pass through but not visible light to pass through.

[0010] When the near-infrared photosensor controller is working, all the scanning lines are provided with scanning signals in turn, and a row of thin-film transistors connected to the scanned scanning line is turned on, and the source and drain of each thin-film transistor in the row of thin-film transistors are connected to each other, so that the voltage signal of the signal line can be applied to the drain. The near-infrared photosensor controller is used to be set in a display device. When near-infrared light is emitted at any position of the display screen of the display device, the near-infrared light will at least partially penetrate the display screen to reach the near-infrared photosensor controller. After the near-infrared light emitted to the photodiode penetrates the shading material unit, the near-infrared light will turn on the photodiode. After the thin-film transistor is turned on, it is electrically connected to the photodiode, and the photodiode generates a large current; the photodiode not irradiated by the near-infrared light is basically in an insulating state, and after the thin-film transistor is turned on, the current is still small; after scanning one frame (all scanning lines are connected to the scanning signal in turn), the corresponding position of the photodiode irradiated by the near-infrared light is identified due to the large current generated, thereby achieving the purpose of fast and accurate positioning of the near-infrared light, and then the display device can realize functions such as pointing remote control, close-range writing, long-range marking, fast positioning, accurate object recognition, etc., making the interaction more convenient.

[0011] In the implementation manner of the present application, each photodiode is a silicon-germanium-based PIN diode, and each photodiode includes a P-type doped silicon layer, an intrinsic silicon-germanium layer, and an N-type doped silicon layer stacked in sequence.

[0012] The wavelength range of near-infrared light is 780 to 2526 nm. The silicon-germanium-based PIN diode is sensitive to near-infrared light. When not irradiated by near-infrared light, it is basically in an insulating state. When irradiated by near-infrared light, it generates a large photocurrent. Therefore, according to the current size at the photodiode, the projection position of the near-infrared light can be quickly and accurately sensed.

[0013] In the implementation manner of the present application, one end of each photodiode is connected to the drain of a thin film transistor, and the other end is connected to the common electrode.

[0014] The photodiode is a reverse biased diode, and the positive electrode of one end of the photodiode is connected to the low potential end, and the negative electrode of the other end is connected to the high potential end. At this time, almost no current flows through the photodiode, and the photodiode is in a cut-off state; after being irradiated with near-infrared light, a large photocurrent is formed in the photodiode, and the photodiode is turned on; thereby, according to the current size at the photodiode, the projection position of the near-infrared light can be quickly and accurately sensed.

[0015] In the implementation manner of the present application, the near-infrared photosensor controller is applied to a display device and integrated with a thin film transistor (TFT) substrate of the display device.

[0016] The near-infrared photosensor controller is integrated with the thin-film transistor (TFT) substrate of the display device, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device due to the introduction of the near-infrared photosensor controller; at this time, a display thin-film transistor and an electrode for display are also provided on the substrate, and in addition to the display thin-film transistor and the electrode provided in each pixel, a pair of photodiodes and a thin-film transistor of the near-infrared photosensor controller are also provided in each pixel, or a pair of photodiodes and a thin-film transistor of the near-infrared photosensor controller are periodically provided in several adjacent pixels.

[0017] A second aspect of the embodiment of the present application provides a near-infrared photosensitivity controller, comprising:

[0018] Base material;

[0019] A plurality of scanning lines are located on the substrate, extending along a first direction and spaced parallel to each other;

[0020] A plurality of signal lines are located on the substrate, extending along the second direction and spaced apart from each other in parallel, and the plurality of signal lines are insulated and cross-linked with the plurality of scanning lines;

[0021] A plurality of thin film transistors are located on the substrate and arranged in a plurality of rows along the first direction and a plurality of columns along the second direction, a gate of each thin film transistor is connected to a scan line, a source is connected to a signal line, gates of thin film transistors located in the same row are connected to the same scan line, and sources of thin film transistors located in the same column are connected to the same signal line;

[0022] A plurality of photodiodes arranged in a matrix are located on the substrate, the plurality of photodiodes are arranged one by one corresponding to the plurality of thin film transistors, each photodiode is connected to a drain of a thin film transistor, each photodiode is electrically connected to the drain of the thin film transistor under the irradiation of visible light, and the drain connected to the photodiode shields the photodiode to prevent light from the substrate side from irradiating the photodiode;

[0023] A plurality of light-shielding material units, each of which is arranged in one-to-one correspondence with the plurality of photodiodes, each light-shielding material unit at least covers a side of a photodiode away from the substrate, and the light-shielding material unit is used to allow near-infrared light to pass through but not visible light to pass through; and

[0024] An up-conversion material film is located between the light-shielding material unit and the plurality of photodiodes, and the up-conversion material film is used for converting the received near-infrared light into visible light.

[0025] When the near-infrared photosensor controller is working, all the scanning lines are provided with scanning signals in turn, and a row of thin-film transistors connected to the scanned scanning line is turned on, and the source and drain of each thin-film transistor in the row of thin-film transistors are connected to each other, so that the voltage signal of the signal line can be applied to the drain. The near-infrared photosensor controller is used to be set in a display device. When near-infrared light is emitted at any position of the display screen of the display device, the near-infrared light will at least partially penetrate the display screen to reach the near-infrared photosensor controller. After the near-infrared light emitted to the photodiode penetrates the shading material unit, it is converted into visible light by the up-conversion material film. The visible light turns on the photodiode. After the thin-film transistor is turned on, it is electrically connected to the photodiode, and the photodiode generates a large current. The photodiode not irradiated by the visible light is basically in an insulating state. After the thin-film transistor is turned on, the current is still small. After scanning one frame (all scanning lines are connected to the scanning signal in turn), the corresponding position of the photodiode irradiated by the visible light is identified due to the large current generated, thereby achieving the purpose of fast and accurate positioning of the near-infrared light, and then the display device can realize functions such as pointing remote control, close-range writing, long-range marking, fast positioning, and accurate object recognition, making the interaction more convenient.

[0026] In an embodiment of the present application, the up-conversion material film includes nanoparticles of an oxide or halide matrix doped with trivalent rare earth particles.

[0027] The doped trivalent rare earth particles may be Er 3+ ,Eu 3+ , Yb 3+ , Ho 3+ , Nd 3+ Etc.; The up-conversion material film mainly effectively absorbs near-infrared light between 800 and 1600 nm and emits visible light, depending on the specific composition and ratio.

[0028] In the embodiment of the present application, the up-conversion material film is a continuous whole layer, or the up-conversion material film includes a plurality of conversion units arranged at intervals, and each conversion unit is located between a photodiode and a light-shielding material unit corresponding to the photodiode.

[0029] The shape of the up-conversion material film can be selected as needed to cover each photodiode, thereby converting near-infrared light into visible light. The up-conversion material film can be set to select near-infrared light with a larger wavelength range to be projected onto the display device, avoiding the use of short-wavelength near-infrared light that is projected onto the human eye due to misoperation and causing damage to the human eye. The up-conversion material film can make the use of the display device with the near-infrared photosensitive controller safer.

[0030] In the implementation manner of the present application, each photodiode is a silicon-based PIN diode, and the PIN diode includes a P-type doped silicon layer, an intrinsic silicon layer, and an N-type doped silicon layer stacked in sequence.

[0031] The silicon-based PIN diode is sensitive to visible light and is basically in an insulating state when not irradiated by visible light. When irradiated by visible light, it generates a large current. Therefore, according to the current size at the photodiode, the projection position of near-infrared light can be quickly and accurately sensed.

[0032] In the implementation manner of the present application, one end of each photodiode is connected to the drain of a thin film transistor, and the other end is connected to the common electrode.

[0033] The photodiode is a reverse biased diode, and the positive electrode of one end of the photodiode is connected to the low potential end, and the negative electrode of the other end is connected to the high potential end. At this time, almost no current flows through the photodiode, and the photodiode is in a cut-off state; after being irradiated with near-infrared light, a large photocurrent is formed in the photodiode; thereby, according to the current size at the photodiode, the projection position of the near-infrared light can be quickly and accurately sensed.

[0034] In the implementation manner of the present application, the near-infrared photosensor controller is applied to a display device and integrated with a thin film transistor (TFT) substrate of the display device.

[0035] The near-infrared photosensor controller is integrated with the thin-film transistor (TFT) substrate of the display device, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device due to the introduction of the near-infrared photosensor controller; at this time, a display thin-film transistor and an electrode for display are also provided on the substrate, and in addition to the display thin-film transistor and the electrode provided in each pixel, a pair of photodiodes and a thin-film transistor of the near-infrared photosensor controller are also provided in each pixel, or a pair of photodiodes and a thin-film transistor of the near-infrared photosensor controller are periodically provided in several adjacent pixels.

[0036] A third aspect of an embodiment of the present application provides a display device, comprising the above-mentioned near-infrared light-sensitive controller, wherein the near-infrared light-sensitive controller is used to sense the position of the near-infrared light projected onto the display device.

[0037] When near-infrared light is emitted toward any position of the display screen of the display device, the near-infrared photosensitizer controller quickly and accurately locates the near-infrared light, thereby enabling the display device to realize functions such as pointing remote control, close-range writing, long-range marking, rapid positioning, and accurate object recognition. This not only makes intelligent interaction more convenient, but also opens up more application scenarios.

[0038] In the embodiment of the present application, the display device includes a stacked liquid crystal display screen and a backlight module; the near-infrared photosensitivity controller is arranged in the liquid crystal display screen, or in the backlight module, or between the liquid crystal display screen and the backlight module.

[0039] The near-infrared photosensitive controller is arranged between the liquid crystal display screen and the backlight module, and can also be arranged in the liquid crystal display screen, for example, attached to the TFT substrate and located between the TFT substrate and the lower polarizer, or arranged in the backlight module, for example, attached to any optical film of the backlight module. In short, the near-infrared photosensitive controller can be arranged in any layer of the display device, as long as it does not affect the display and does not affect its reception of external infrared light.

[0040] In an embodiment of the present application, when the near-infrared photosensor controller is arranged in the liquid crystal display screen and integrated with the TFT substrate of the liquid crystal display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of gate lines are independent of the plurality of scanning lines; and the plurality of data lines are independent of the plurality of signal lines.

[0041] The near-infrared photosensor controller is integrated with the TFT substrate of the display device, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device due to the introduction of the near-infrared photosensor controller.

[0042] In an embodiment of the present application, when the near-infrared photosensor controller is arranged in the liquid crystal display screen and integrated with the TFT substrate of the liquid crystal display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of data lines are independent of the plurality of signal lines; each scanning line of the near-infrared photosensor controller shares a gate line on the substrate.

[0043] The near-infrared photosensitive controller is integrated with the TFT substrate of the display device, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device caused by the introduction of the near-infrared photosensitive controller; in addition, at least part of each of the multiple gate lines can also be used as a scan line of the near-infrared photosensitive controller, so there is no need to set up additional scan lines of the near-infrared photosensitive controller, which simplifies the structure of the display device. Among them, each gate line is electrically connected to the gate of the display thin film transistor to turn on the display thin film transistor, so that the voltage signal from the signal line can be applied to the pixel electrode through the display thin film transistor, and the gate line shared as the scan line is also electrically connected to the thin film transistor of the near-infrared photosensitive controller. Specifically, a pair of correspondingly arranged photodiodes and thin film transistors of the near-infrared photosensitive controller can be set corresponding to the pixels in the display device, which can be a one-to-one corresponding setting, or a pair of photodiodes and thin film transistors can be set correspondingly to several adjacent pixels. When each pixel in the display device is provided with a photodiode of a near-infrared photosensor controller, each gate line in the display device is shared with a scan line of the near-infrared photosensor controller, that is, a gate line of the display device is a scan line of the near-infrared photosensor controller, and at this time the total number of gate lines of the display device is equal to the total number of scan lines of the near-infrared photosensor controller; when the display device periodically sets a photodiode of a near-infrared photosensor controller in several adjacent pixels, any gate line in several adjacent pixels provided with a photodiode of the near-infrared photosensor controller can be shared with a scan line of the near-infrared photosensor controller, and the total number of gate lines of the display device is greater than the total number of scan lines required by the near-infrared photosensor controller. Therefore, only some gate lines in the display device are shared with the scan lines of the near-infrared photosensor controller, and at this time the number of shared gate lines is the number of scan lines required by the near-infrared photosensor controller.

[0044] In an embodiment of the present application, the display device includes a main display screen, a sub-display screen, and a backlight module which are stacked in sequence from top to bottom; the near-infrared photosensitivity controller is arranged in the main display screen, or in the sub-display screen, or in the backlight module, or between the main display screen and the sub-display screen, or between the sub-display screen and the backlight module.

[0045] The sub-display screen is set to control the brightness of light by controlling the rotation degree of each pixel liquid crystal, achieving the effect of high-precision local dimming, so that the display device as a whole can achieve a high-contrast display effect; the near-infrared photosensor controller can be set in a variety of positions, as long as it does not affect the display and does not affect its reception of external infrared light.

[0046] In the implementation manner of the present application, the backlight module is used to emit polarized light.

[0047] The secondary display screen does not have a polarizing film, and the backlight module is required to emit polarized light, thereby facilitating further reducing the overall thickness of the display device.

[0048] In the implementation manner of the present application, the pixel size of the secondary display screen is 1 to 10 times the pixel size of the primary display screen.

[0049] Since the function of the secondary display screen is to achieve high-precision local dimming, so that the display device as a whole can achieve a high-contrast display effect; therefore, the pixels of the secondary display screen can be the same size as the pixels of the main display screen, or larger than the pixels of the main display screen.

[0050] In an embodiment of the present application, when the near-infrared photosensor controller is arranged in the main display screen and integrated with the TFT substrate of the main display screen, or is arranged in the sub-display screen and integrated with the TFT substrate of the sub-display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of gate lines are independent of the plurality of scanning lines; and the plurality of data lines are independent of the plurality of signal lines.

[0051] The near-infrared photosensor controller is integrated with the TFT substrate of the main display screen or the auxiliary display screen, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device due to the introduction of the near-infrared photosensor controller.

[0052] In an embodiment of the present application, when the near-infrared photosensitivity controller is arranged in the main display screen and integrated with the TFT substrate of the main display screen, or is arranged in the sub-display screen and integrated with the TFT substrate of the sub-display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of data lines are independent of the plurality of signal lines; and each scanning line of the near-infrared photosensitivity controller shares a gate line on the substrate.

[0053] The near-infrared photosensitive controller is integrated with the TFT substrate of the main display screen or the sub-display screen, which does not affect the display function and can effectively reduce the thickness of the display device; in addition, at least part of each of the multiple gate lines can also be used as a scan line, so there is no need to set up additional scan lines, which simplifies the structure of the display device; wherein, each gate line is electrically connected to the gate of the display thin film transistor to turn on the display thin film transistor, so that the voltage signal from the signal line can be applied to the pixel electrode through the display thin film transistor, and the gate line shared as the scan line is also electrically connected to the thin film transistor of the near-infrared photosensitive controller. Specifically, a pair of correspondingly arranged photodiodes and thin film transistors of the near-infrared photosensitive controller can be arranged corresponding to the pixels in the display device, specifically, it can be a one-to-one corresponding arrangement, or a pair of photodiodes and thin film transistors can be arranged correspondingly for several adjacent pixels. When each pixel in the display device is provided with a photodiode of a near-infrared photosensor controller, each gate line in the display device is shared with a scan line of the near-infrared photosensor controller, that is, a gate line of the display device is a scan line of the near-infrared photosensor controller, and at this time the total number of gate lines of the display device is equal to the total number of scan lines of the near-infrared photosensor controller; when the display device periodically sets a photodiode of a near-infrared photosensor controller in several adjacent pixels, any gate line in several adjacent pixels provided with a photodiode of the near-infrared photosensor controller can be shared with a scan line of the near-infrared photosensor controller, and the total number of gate lines of the display device is greater than the total number of scan lines required by the near-infrared photosensor controller. Therefore, only some gate lines in the display device are shared with the scan lines of the near-infrared photosensor controller, and at this time the number of shared gate lines is the number of scan lines required by the near-infrared photosensor controller.

[0054] In an embodiment of the present application, the display device is an organic electroluminescent display device, which includes a cathode layer, an organic layer, an anode layer and a TFT substrate stacked from top to bottom, and the near-infrared photosensitivity controller is arranged on the surface of the TFT substrate away from the anode layer.

[0055] The near-infrared photosensitivity controller is arranged on the surface of the TFT substrate away from the organic layer, which will not affect the display effect, and can also achieve the same purpose of long-distance operation through near-infrared light. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 is a schematic cross-sectional structural diagram of a display device according to Embodiment 1 of the present application;

[0057] Figure 2 is a schematic cross-sectional structure diagram of the near-infrared photosensor controller of the first embodiment;

[0058] Figure 3is a schematic cross-sectional structure diagram of a near-infrared photosensor controller according to a second embodiment;

[0059] Figure 4 is a top view schematic diagram of a near-infrared photosensitizer controller;

[0060] Figure 5 is a schematic cross-sectional structure diagram of a display device according to Embodiment 2 of the present application;

[0061] Figure 6 is a schematic cross-sectional structural diagram of a display device according to Embodiment 3 of the present application;

[0062] Figure 7 is a schematic cross-sectional structural diagram of a display device according to a fourth embodiment of the present application;

[0063] Figure 8 yes Figure 7 Cross-sectional view of a mid- to near-infrared photosensor controller Figure 1 ;

[0064] Fig. 9 yes Figure 7 Cross-sectional view of a mid- to near-infrared photosensor controller Figure 2 ;

[0065] Fig.10 yes Figure 7 A top view of a near-infrared photosensitive controller Figure 1 ;

[0066] Fig.11 yes Figure 7 A top view of a near-infrared photosensitive controller Figure 2 ;

[0067] Fig.12 It is a schematic diagram of the cross-sectional structure of the display device of the fifth embodiment of the present application.

[0068] Main component symbols

[0069] Display device 100, 200, 300, 400

[0070] LCD display 110

[0071] Backlight module 130

[0072] Upper polarizer 41

[0073] Color filter substrate 10, 10b

[0074] Liquid crystal layers 20, 20b

[0075] TFT substrate 30, 30b, 540

[0076] Lower polarizer 43

[0077] Near infrared photosensitive controllers 60, 60a, 60b

[0078] Substrate 61

[0079] Thin Film Transistor 63

[0080] Photodiode 65

[0081] Light-shielding material unit 67

[0082] P-type doped layer 651

[0083] Intrinsic layer 653

[0084] N-type doped layer 655

[0085] Scan line 62

[0086] Signal line 64

[0087] Source 633, 633a, 633b

[0088] Gates 631, 631a, 631b

[0089] Drain 635, 635a, 635b

[0090] Semiconductor layers 637, 637a, 637b

[0091] Gate Driver 66

[0092] Circuit 68

[0093] Common electrode 70

[0094] Pixel electrode 90

[0095] Passivation layer 71

[0096] Insulation layer 73

[0097] Planarization layer 75

[0098] Up conversion material film 50

[0099] Transparent substrates 11, 31, 11b, 31b

[0100] Color filter unit 13

[0101] Shading Matrix 14

[0102] Alignment film 15

[0103] Electrode layer 81

[0104] Thin film transistor and pixel electrode layer 33

[0105] Thin film transistor and electrode layer 33b

[0106] Gate line 52

[0107] Data line 54

[0108] Main display 210

[0109] Secondary display screen 230

[0110] Polarizer 231

[0111] Triacetate Film 40

[0112] Display thin film transistor 63b

[0113] Photosensitive thin film transistor 63a

[0114] Liquid crystal capacitor 21

[0115] Storage capacitor 22

[0116] Cathode layer 510

[0117] Organic layer 520

[0118] Anode layer 530 DETAILED DESCRIPTION

[0119] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application.

[0120] Embodiment 1

[0121] See also Figure 1 The display device 100 of the first embodiment of the present application is a liquid crystal display device, which includes a liquid crystal display screen 110 and a backlight module 130 stacked up and down.

[0122] The liquid crystal display screen 110 includes an upper polarizer 41, a color filter substrate 10, a liquid crystal layer 20, a thin film transistor substrate (TFT substrate) 30, and a lower polarizer 43, which are stacked in sequence. The backlight module 130 is used to project light toward the liquid crystal display screen 110. The backlight module 130 is arranged on a side of the liquid crystal display screen 110 having the lower polarizer 43. The backlight module 130 can be a direct-type backlight module or an edge-type backlight module. Figure 1The specific structure of the backlight module 130 is not specifically shown, and it may include an LED light source, a reflective sheet, a diffuser, a brightness enhancement film and other optical films. The direct-lit backlight module 130 generally includes tiny blue LEDs, quantum dot films or fluorescent films, reflective sheets, diffusers, brightness enhancement films, etc., which are arranged in an array at the bottom of the backlight module 130. The LEDs of the edge-lit backlight are arranged on the side of the backlight module 130, and the light emitted by the LED enters from the side of the light guide plate, and is evenly projected to the liquid crystal display screen 110 through the light guide plate and the dots thereon, as well as the diffuser, prism, etc.

[0123] like Figure 1 As shown, the color filter substrate 10 of the liquid crystal display screen 110 includes a transparent substrate 11 (such as glass or plastic material), a plurality of color filter units 13 and a shading matrix 14 arranged on the surface of the transparent substrate 11 facing the liquid crystal layer 20, and an alignment film 15 arranged on the surface of the plurality of color filter units 13 and the shading matrix 14 facing the liquid crystal layer 20. The plurality of color filter units 13 are arranged at intervals from each other, and the shading matrix 14 is arranged between the color filter units 13. The color filter units 13 include filter units of three colors of red, green and blue. By mixing the three primary colors, any color perceptible to the naked eye can be presented. Among them, the upper polarizer 41 is arranged on the surface of the transparent substrate 11 away from the liquid crystal layer 20.

[0124] like Figure 1 As shown, the TFT substrate 30 includes a transparent substrate 31 (such as glass or plastic material), a layer 33 of thin film transistors and pixel electrodes arranged on the surface of the transparent substrate 31 facing the liquid crystal layer 20, and an alignment film 15 arranged on the surface of the thin film transistor and pixel electrode layer 33 facing the liquid crystal layer 20. The lower polarizer 43 is arranged on the surface of the transparent substrate 11 away from the liquid crystal layer 20.

[0125] The light from the backlight module 130 is emitted through the lower polarizer 43, the TFT substrate 30, the liquid crystal layer 20, the color filter substrate 10 and the upper polarizer 41 in sequence. The light passing through the lower polarizer 43 forms white polarized light with a specific polarization direction, and then is filtered by the color filter unit 13 of the color filter substrate 10 to form polarized light of red, green and blue. When the polarization direction of the polarized light is perpendicular to the polarization direction of the upper polarizer 41, the polarized light cannot penetrate the upper polarizer 41, and when the polarization direction of the polarized light is parallel to the polarization direction of the upper polarizer 41, the polarized light can penetrate the upper polarizer 41. The liquid crystal molecules in the liquid crystal layer 20 have optical rotation characteristics for polarized light. The specific arrangement direction of the liquid crystal molecules can change the polarization direction of the polarized light. When the arrangement direction of the liquid crystal molecules is controlled by the electric field and rotates, the direction of the polarized light passing through the liquid crystal molecules also changes, thereby controlling the emission of light from the upper polarizer 41. The electric field electrodes that control the liquid crystal molecules correspond to the color filter units 13 of the color film substrate 10. When the electric field electrodes regularly control the liquid crystal molecules to rotate according to the electrical signals, the light of the red, green and blue pixels will regularly pass through the upper polarizer 41, and finally form a color image.

[0126] The existing human-computer remote interaction with the display device usually uses a remote control to move the selection item by item from top to bottom or from left to right, or through simple voice input, which cannot perform fast and accurate selection and input control, and the experience is not ideal. Based on the unsatisfactory experience of human-computer remote interaction in display devices in traditional technologies, the present application provides a near-infrared photosensitive controller 60, which can be set in the display device 100. When near-infrared rays are emitted to the display screen of the display device 100 from a long distance, the near-infrared photosensitive controller 60 can quickly and accurately locate the position where the near-infrared rays are projected onto the display screen, thereby realizing remote control operations on the display device 100.

[0127] In this embodiment, the near-infrared light sensitive controller 60 is disposed between the liquid crystal display screen 110 and the backlight module 130 ; more specifically, the near-infrared light sensitive controller 60 is disposed between the lower polarizer 43 and the backlight module 130 .

[0128] It is understandable that the near-infrared photosensitive controller 60 is not limited to being disposed between the liquid crystal display screen 110 and the backlight module 130, but may also be disposed in the liquid crystal display screen 110, for example, attached to the TFT substrate 30 and located between the TFT substrate 30 and the lower polarizer 43, or disposed in the backlight module 130, for example, attached to any optical film of the backlight module 130. In short, the near-infrared photosensitive controller 60 may be disposed in any layer of the display device 100, as long as it does not affect the display and does not affect its reception of external infrared light.

[0129] Figure 2 and Figure 3 Two different structural types of near-infrared photosensitive controllers 60 are shown. The two different structural types of near-infrared photosensitive controllers 60 can be replaced with each other.

[0130] Figure 2 The near infrared photosensitive controller 60a shown includes:

[0131] Substrate 61;

[0132] A plurality of thin film transistors 63 disposed on the substrate 61 and arranged in a matrix;

[0133] A plurality of photodiodes 65 arranged in a matrix on the substrate 61, wherein the plurality of photodiodes 65 are arranged in a one-to-one correspondence with the plurality of thin film transistors 63, each photodiode 65 is connected to a thin film transistor 63, and each photodiode 65 is electrically connected to the thin film transistor 63 under the irradiation of near-infrared light; and

[0134] A plurality of light shielding material units 67 , each light shielding material unit 67 at least covers a side of each photodiode 65 away from the substrate 61 , and is used to allow near-infrared light to pass through but not visible light to pass through.

[0135] Figure 2 Only one photodiode 65, a thin film transistor 63 corresponding thereto, and a light shielding material unit 67 corresponding thereto are shown. In the near-infrared light sensitive controller 60a, each photodiode 65 is a near-infrared light sensitive element, which changes from an electrically insulating state to an electrically conductive state under the irradiation of near-infrared light. Each photodiode 65 is a reverse biased diode, with its anode connected to the low potential end and its cathode connected to the high potential end. At this time, almost no current flows through the photodiode 65, and the photodiode 65 is in a cut-off state; when irradiated with near-infrared light, a strong current is formed in the photodiode 65, thereby turning on.

[0136] In the embodiment of the present application, each photodiode 65 is a silicon germanium-based PIN diode, specifically a PIN diode of amorphous silicon germanium or low-temperature polycrystalline silicon germanium, and the PIN diode includes a P-type doped layer 651, an intrinsic layer 653, and an N-type doped layer 655 stacked in sequence; the P-type doped layer 651 and the N-type doped layer 655 are both silicon layers, the intrinsic layer 653 is a silicon germanium layer, and the specific germanium content in the intrinsic layer 653 is adjusted according to the response wavelength requirements. The wavelength range of near-infrared light is 780 to 2526 nm, and the silicon germanium-based PIN diode is sensitive to near-infrared light. When it is not irradiated by near-infrared light, it is basically in an insulating state. When it is irradiated by near-infrared light, it generates a large photocurrent, thereby realizing fast and accurate sensing of the projection position of near-infrared light according to the current size at the photodiode. The thickness of the P-type doped layer 651 is 20 to 50 nm, the thickness of the intrinsic layer 653 is 500 to 1000 nm, and the thickness of the N-type doped layer 655 is 50 to 200 nm.

[0137] Combined with reference Figure 4 , the near-infrared photosensitive controller 60a also includes a plurality of scan lines 62 extending along a first direction D1 and spaced parallel to each other, and a plurality of signal lines 64 extending along a second direction D2 and spaced parallel to each other; the plurality of signal lines 64 are insulated and cross each scan line 62. In the embodiment of the present application, the first direction D1 is perpendicular to the second direction D2. The gate 631 of each thin-film transistor 63 is connected to a scan line 62, the source 633 is connected to a signal line 64, and the drain 635 is connected to a photodiode 65. Figure 2 As shown, the drain 635 connected to the photodiode 65 completely shields the photodiode 65 to prevent light from the substrate 61 from irradiating the photodiode 65, and the area of ​​the drain 635 is larger than the area of ​​the photodiode 65 to completely shield the photodiode 65. The gates 631 of the thin film transistors 63 in the same row along the first direction D1 are connected to the same scan line 62, and the gates 631 of the thin film transistors 63 in different rows are connected to different scan lines 62; the sources 633 of the thin film transistors 63 in the same column along the second direction D2 are connected to the same signal line 64; the sources 633 of the thin film transistors 63 in different columns are connected to different signal lines 64.

[0138] like Figure 4, the near-infrared photosensitive controller 60 also includes two gate drivers 66 (GOA) and a circuit 68 (IC). The two gate drivers 66 (GOA) are located at the two ends of the plurality of scan lines 62, and each of the two ends of each scan line 62 is respectively connected to a gate driver 66 (GOA), and each gate driver 66 is electrically connected to the circuit 68. When the near-infrared photosensitive controller 60 is working, the circuit 68 and the gate driver 66 cooperate to sequentially provide scan signals to the plurality of scan lines 62; that is, only one scan line 62 is provided with a scan signal at each moment, and the thin film transistor 63 connected to the scan line 62 is turned on. All scan lines 62 are sequentially provided with scan signals to complete a frame of scanning. Each signal line 64 is connected to the circuit 68, and the circuit 68 is used to send an electrical signal to each signal line 64, thereby transmitting the electrical signal to the source 633 of each thin film transistor 63. When the near-infrared photosensitive controller 60 is working, the circuit 68 continuously sends an electrical signal to each signal line 64. It can be understood that the number of the gate driver 66 can also be set to one, which is only set at one end of the plurality of scanning lines 62 .

[0139] When the near-infrared photosensor controller 60 is working, all the scanning lines 62 are provided with scanning signals in turn, and a row of thin-film transistors 63 connected to the scanned scanning line 62 is turned on, and the source 633 and the drain 635 of each thin-film transistor 63 in the row of thin-film transistors 63 are connected to each other, so that the voltage signal of the signal line 64 can be applied to the drain 635. When a near-infrared light emitting device (not shown) or a dedicated near-infrared laser pen (not shown) integrated in a remote controller emits near-infrared light at any position of the display screen of the display device 100, the near-infrared light will partially penetrate the liquid crystal display screen 110 to reach the near-infrared photosensitizer 60a. After the near-infrared light directed to the photodiode 65 penetrates the light-shielding material unit 67, the near-infrared light will turn on the PIN photodiode 65. After the thin-film transistor 63 is turned on, it will be electrically connected to the photodiode 65, and the photodiode 65 will generate a large current. The PIN photodiode 65 that is not irradiated by the near-infrared light is basically in an insulating state. After the thin-film transistor 63 is turned on, the current is still small. After scanning one frame (all scanning lines 62 are connected to the scanning signal in turn), the corresponding position of the photodiode 65 irradiated by the near-infrared light is identified due to the large current generated, thereby achieving the purpose of fast and accurate positioning of the near-infrared light.

[0140] The material of the light shielding material unit 67 is a photoresist material, whose visible light transmittance is less than 1% and near infrared light transmittance is greater than 80%. The light shielding material unit 67 can be formed into a desired pattern through coating, curing, exposure and development, and is arranged on the photodiode 65 to shield the stray visible light in the display device 100 and the visible light in the environment directed toward the display device 100, thereby improving the sensitivity of the near infrared light and the signal-to-noise ratio.

[0141] The substrate 61 can be a transparent, flexible substrate 61, such as transparent polyimide (Colorless Polyimide, CPI), cycloolefin polymer (Cyclo Olefin Polymer, COP), etc.; but it is not limited to flexible substrates. For example, the substrate 61 can also use a glass substrate, and the film in the backlight can be attached to the glass substrate to improve the stability of the backlight.

[0142] like Figure 2 As shown, the near-infrared photosensitive controller 60a also includes a passivation layer 71, an insulating layer 73, and a planarization layer 75 stacked on the substrate 61 from bottom to top. The passivation layer 71, the insulating layer 73, and the planarization layer 75 are all made of conventional electrical insulating materials in the art. The thin film transistor 63 is a bottom gate type, and the gate 631 of the thin film transistor 63 is arranged on the surface of the passivation layer 71 away from the substrate 61; the insulating layer 73 is stacked on the passivation layer 71 and completely covers the gate 631, and the source 633 and drain 635 of the thin film transistor 63 and the semiconductor layer 637 connected between the source 633 and the drain 635 are arranged on the surface of the insulating layer 73 away from the substrate 61. The photodiode 65 is arranged on the drain 635. The planarization layer 75 is stacked on the insulating layer 73 and completely covers the source 633, drain 635, and semiconductor layer 637 of the thin film transistor 63. The light shielding material unit 67 is disposed on the surface of the planarization layer 75 away from the substrate 61 and covers at least one photodiode 65. In the embodiment of the present application, the light shielding material unit 67 covers one photodiode 65 and a thin film transistor 63 connected to the photodiode 65.

[0143] Combined with reference Figure 2 and Figure 4The near-infrared photosensitive controller 60a further includes a common electrode 70 disposed on the substrate 61. The cathode of each photodiode 65 is connected to the drain 635 of the thin film transistor 63, and the anode is connected to the common electrode 70. The potential of the drain 635 is required to be higher than the potential of the common electrode 70, so as to ensure that the anode of the photodiode 65 is connected to the low potential end and the cathode is connected to the high potential end; for example, the N-type doped layer 655 (cathode) of each photodiode 65 is connected to the drain 635 of the thin film transistor 63, and the P-type doped layer 651 (anode) is connected to the common electrode 70. The common electrode 70 is connected to each photodiode 65. The common electrode 70 and the gates 631 of the plurality of thin film transistors 63 can be formed by patterning using the same conductive layer.

[0144] It can be understood that in other embodiments, the positive electrode of each photodiode 65 is connected to the drain 635 of the thin film transistor 63, and the negative electrode is connected to the common electrode 70. The potential of the drain 635 is required to be lower than the potential of the common electrode 70 to ensure that the positive electrode is connected to the low potential end and the negative electrode is connected to the high potential end; for example, the N-type doped layer 655 (negative electrode) of each photodiode 65 is connected to the common electrode 70, and the P-type doped layer 651 (positive electrode) is connected to the drain 635 of the thin film transistor 63. Figure 3 The near infrared photosensitive controller 60b shown is basically the same as the above-mentioned near infrared photosensitive controller 60a, except that the photodiode 65 in the near infrared photosensitive controller 60b is a visible light photosensitive element, and further includes an up-conversion material film 50. Specifically, the near infrared photosensitive controller 60b includes:

[0145] Substrate 61;

[0146] A plurality of thin film transistors 63 disposed on the substrate 61 and arranged in a matrix;

[0147] A plurality of photodiodes 65 arranged in a matrix on the substrate 61, wherein the plurality of photodiodes 65 are arranged in a one-to-one correspondence with the plurality of thin film transistors 63, each photodiode 65 is connected to a thin film transistor 63, and each photodiode 65 is electrically connected to the thin film transistor 63 under the irradiation of visible light;

[0148] A plurality of light shielding material units 67, each light shielding material unit 67 covers at least one side of each photodiode 65 away from the substrate 61, and is used to allow near-infrared light to pass through but not visible light to pass through; and

[0149] The up-conversion material film 50 is located between the plurality of light-shielding material units 67 and the plurality of photodiodes 65 , and the up-conversion material film 50 is used for converting the received near-infrared light into visible light.

[0150] Figure 3 Only one photodiode 65, a thin film transistor 63 corresponding thereto, and a light-shielding material unit 67 corresponding thereto are shown. In the near-infrared photosensitivity controller 60b, each photodiode 65 is a visible light sensitive element, which changes from an electrically insulating state to an electrically conductive state under the irradiation of visible light. Each photodiode 65 is a reverse biased diode, with its anode connected to the low potential end and its cathode connected to the high potential end. At this time, almost no current flows through the photodiode 65, and the photodiode 65 is in a cut-off state; under the irradiation of visible light, electron-hole pairs are formed in the photodiode 65, forming a strong current, thereby conducting. In the embodiment of the present application, each photodiode 65 is a silicon-based PIN diode, specifically a PIN diode of amorphous silicon or low-temperature polycrystalline silicon, and the PIN diode includes a P-type doped layer 651, an intrinsic layer 653, and an N-type doped layer 655 stacked in sequence; the P-type doped layer 651, the intrinsic layer 653, and the N-type doped layer 655 are all silicon layers. The thickness of the P-type doping layer 651 is 20-50 nm, the thickness of the intrinsic layer 653 is 500-1000 nm, and the thickness of the N-type doping layer 655 is 50-200 nm. Similarly, the drain 635 connected to the photodiode 65 shields the photodiode 65 to prevent the light from the substrate 61 from irradiating the photodiode 65, and the area of ​​the drain 635 is larger than the area of ​​the photodiode 65 to completely shield the photodiode 65.

[0151] When the near-infrared photosensor controller 60 is working, all the scanning lines 62 are provided with scanning signals in turn, and a row of thin-film transistors 63 connected to the scanned scanning line 62 is turned on, and the source 633 and the drain 635 of each thin-film transistor 63 in the row of thin-film transistors 63 are connected to each other, so that the voltage signal of the signal line 64 can be applied to the drain 635. When the near-infrared light emitting device integrated in the remote control or a dedicated near-infrared laser pen is aimed at any position of the screen of the display device 100 to emit near-infrared light, the near-infrared light will partially penetrate the liquid crystal display screen 110 to reach the near-infrared photosensitizer 60b, and the near-infrared light emitted to the photodiode 65 penetrates the light-shielding material unit 67, and is converted into visible light by the up-conversion material film 50. The visible light turns on the PIN photodiode 65, and the thin-film transistor 63 is electrically connected to the photodiode 65 after being turned on, generating a large current; the PIN photodiode 65 that is not irradiated by visible light is basically in an insulating state, and after the thin-film transistor 63 is turned on, the current is still small; after scanning one frame (all scanning lines 62 are connected to the scanning signal in turn), the corresponding position of the photodiode 65 irradiated by the visible light is identified due to the large current generated, thereby achieving the purpose of fast and accurate positioning of the near-infrared light.

[0152] like Figure 3As shown, the structure of the near-infrared photosensitivity controller 60b is basically the same as that of the near-infrared photosensitivity controller 60a, and also includes a passivation layer 71, an insulating layer 73, and a planarization layer 75 stacked on the substrate 61 from bottom to top; the up-conversion material film 50 is located on the surface of the planarization layer 75 away from the substrate 61, and at least covers the photodiode 65; the multiple light-shielding material units 67 are located on the surface of the up-conversion material film 50 away from the substrate 61, and at least cover one photodiode 65. In the embodiment of the present application, the up-conversion material film 50 is a continuous whole layer that basically covers the planarization layer 75. In other embodiments, the up-conversion material film 50 includes a plurality of conversion units (not shown) arranged at intervals, and each conversion unit is located between a photodiode 65 and a light-shielding material unit 67 corresponding to the photodiode 65. The setting of the up-conversion material film 50 can select near-infrared light with a larger wavelength range to be projected onto the display device 100, thereby avoiding the use of short-wavelength near-infrared light that may cause damage to the human eye due to misoperation. The up-conversion material film 50 can make the use of the display device 100 with the near-infrared photosensitizer 60 safer.

[0153] The up-conversion material film 50 includes trivalent rare earth doped particles (such as Er 3+ ,Eu 3+ , Yb 3+ , Ho 3+ , Nd 3+ The up-conversion material film 50 mainly absorbs near-infrared light between 800 and 1600 nm and emits visible light according to different composition ratios.

[0154] In the embodiment of the present application, the multiple photodiodes 65 and the multiple shading material units 67 are arranged in a matrix, and the arrangement period is approximately one photodiode 65 and one shading material unit 67 per (1 to 10) mm*(1 to 10) mm area, which can be designed according to the specific application scenario and algorithm of the display device.

[0155] The display device 100 of this embodiment can be quickly and accurately positioned by a near-infrared laser pen or a similar remote control device that can emit near-infrared light, thereby realizing close-range writing and long-range pointing remote control, marking, etc., and convenient human-computer interaction; it can make the application scenarios of television more extensive, such as expanding home entertainment and enhancing the gaming experience such as CS games that require quick and accurate positioning, and making home shopping and family education interaction more convenient.

[0156] Embodiment 2

[0157] See also Figure 5The display device 200 of the second embodiment of the present application is a liquid crystal display device, which includes a main display screen 210, a sub-display screen 230 and a backlight module 130 stacked in sequence from top to bottom. In this embodiment, the near-infrared light sensitive controller 60 is arranged between the main display screen 210 and the sub-display screen 230. The near-infrared light sensitive controller 60 can be the above-mentioned near-infrared light sensitive controller 60a or the near-infrared light sensitive controller 60b.

[0158] In this embodiment, the structure of the main display screen 210 may be completely consistent with the structure of the liquid crystal display screen 110 in the first embodiment, and the structure of the backlight module 130 may be completely consistent with the backlight module 130 in the first embodiment, which will not be described in detail here.

[0159] In this embodiment, the display device 200 is provided with a sub-display screen 230 located between the main display screen 210 and the backlight module 130. Figure 5 As shown, the secondary display screen 230 includes a color filter substrate 10b, a liquid crystal layer 20b and a TFT substrate 30b stacked from top to bottom. The difference from the main display screen 210 is that the color filter substrate 10b of the secondary display screen 230 is not provided with a polarizer and a color filter unit. The secondary display screen 230 mainly controls the degree of rotation of each pixel liquid crystal to achieve the effect of high-precision local dimming (locading dimming), so that the display device 200 as a whole achieves a high-contrast display effect. The pixel size of the secondary display screen 230 can be the same as that of the main display screen 210, or it can be larger than that of the main display screen 210, such as the pixel size is 1 to 10 times that of the main display screen 210, preferably 5 times. The display mode of the secondary display screen 230 can be twisted nematic (TN), fringe field switching (FFS) or vertical alignment liquid crystal (VA), but considering the transmittance, the TN mode is preferred. Figure 5 The sub-display screen 230 shown is in TN mode.

[0160] Please continue reading Figure 5The color filter substrate 10b of the secondary display screen 230 includes a transparent substrate 11b, a transparent electrode layer 81 and an alignment film 15 stacked in sequence from top to bottom, wherein the alignment film 15 is close to the liquid crystal layer 20b; the TFT substrate 30b of the secondary display screen 230 includes a transparent substrate 31b, a layer of thin film transistors and electrodes 33b and an alignment film 15 stacked in sequence from bottom to top, wherein the alignment film 15 is relatively close to the liquid crystal layer 20b; a polarizer 231 is disposed on the surface of the transparent substrate 31b away from the liquid crystal layer 20. Only one polarizer 231 (equivalent to the lower polarizer) is disposed in the secondary display screen 230, which can be used as the upper polarizer of the secondary display screen 230 by sharing the lower polarizer 43 of the main display screen 210, thereby facilitating the reduction of the overall thickness of the display device 200. The transparent substrate 11b of the color film substrate 10b of the secondary display screen 230 and the transparent substrate 31b of the TFT substrate 30b can be a glass substrate or a plastic substrate; considering the lightness and thinness, transparent polyimide (Colorless Polyimide, CPI) and cycloolefin polymer (COP) materials are preferably used as substrate materials. If CPI substrate material is selected, because CPI is thin, a layer of triacetate film (not shown) can be attached to its outer surface for protection. The electrode layer 81 serves as a common electrode for driving the rotation of the liquid crystal molecules in the liquid crystal layer 20b, and its material can be indium tin oxide, but is not limited to indium tin oxide. The electrodes in the thin film transistor and electrode layer 33b include at least pixel electrodes.

[0161] In this embodiment, more specifically, the near-infrared photosensitive controller 60 is disposed between the lower polarizer 43 of the main display screen 210 and the transparent substrate 11 b of the color filter substrate 10 b of the auxiliary display screen 230 .

[0162] It can be understood that the setting position of the near-infrared photosensor controller 60 is not limited to being set between the main display screen 210 and the sub-display screen 230. It can be set in any layer of the display device 200 as long as it does not affect the display and does not affect its reception of external infrared light; for example, between the sub-display screen 230 and the backlight module 130, or set in the layer of the main display screen 210; or set in the layer of the sub-display screen 230; or set in the backlight module 130 (combined with the diaphragm in the backlight).

[0163] Compared with the display device 100 of the first embodiment, the display device 200 of the second embodiment adds a sub-display screen 230. The sub-display screen 230 assists in local dimming on the basis of the main display screen 210, so that the display device 200 can achieve a high-contrast picture display effect, and can also realize fast and accurate positioning using a near-infrared device, realize close-range writing and long-range pointing remote control, marking, etc., and facilitate human-computer interaction for recognizing people and objects. In addition, the sub-display screen 230 in this embodiment can adopt a plastic substrate and a larger pixel design, which not only ensures a light and thin effect, but also ensures that the overall transmittance is less affected.

[0164] Embodiment 3

[0165] See also Figure 6 The display device 300 of the third embodiment of the present application is a liquid crystal display device, which includes a main display screen 210, a sub-display screen 230 and a backlight module 130 stacked in sequence from top to bottom, and the near-infrared photosensitivity controller 60 is arranged between the main display screen 210 and the sub-display screen 230.

[0166] The display device 300 of the embodiment of the present application is basically the same in structure as the display device 200 of the second embodiment, except that: the secondary display screen 230 of the display device 300 is not provided with a polarizer, and the backlight module 130 emits polarized light, the polarization direction of the polarized light is perpendicular to the light transmission direction of the lower polarizer 43 of the main display screen 210, and the higher the polarization degree of the polarized light emitted by the backlight module 130, the higher the contrast of the screen display of the display device 300, and the better the picture layering effect. The secondary display screen 230 is not provided with a polarizer, which is conducive to further reducing the overall thickness of the display device 300, but the backlight module 130 is required to emit polarized light. The transparent substrate 11b of the color film substrate 10b of the secondary display screen 230 and the transparent substrate 31b of the TFT substrate 30b can be a glass substrate or a plastic substrate. Considering the thinness, transparent PI (CPI) or COP material is preferably used as the substrate material. In the embodiment of the present application, the transparent substrate 31b of the TFT substrate 30b and the transparent substrate 11b of the color film substrate 10b are both made of CPI material, because the thickness of CPI is relatively thin. Figure 6 As shown, a layer of triacetate film 40 is attached to the outer surface of the transparent substrate 31b of the TFT substrate 30b away from the liquid crystal layer 20b for protection; a layer of triacetate film 40 is attached to the outer surface of the transparent substrate 11b of the color film substrate 10b away from the liquid crystal layer 20b for protection.

[0167] It can be understood that the setting position of the near-infrared photosensor controller 60 is not limited to being set between the main display screen 210 and the sub-display screen 230. It can be set in any layer of the display device 200 as long as it does not affect the display and does not affect its reception of external infrared light; for example, between the sub-display screen 230 and the backlight module 130, or set in the layer of the main display screen 210; or set in the sub-display screen 230; or set in the backlight module 130 (combined with the diaphragm in the backlight).

[0168] The display device 300 of the embodiment of the present application has the same technical effects as the display device 200 of the second embodiment. In addition, since the secondary display screen 230 of the display device 300 does not use a polarizer, the cost is significantly reduced, but the backlight module 130 needs to emit polarized light.

[0169] Embodiment 4

[0170] See also Figure 7 The display device 400 of the fourth embodiment of the present application is a liquid crystal display device, which includes a main display screen 210, a sub-display screen 230 and a backlight module 130 stacked in sequence from top to bottom.

[0171] The display device 400 of the embodiment of the present application has a substantially identical structure to the display device 300 of the second embodiment, except that a separate near-infrared photosensor controller 60 is not provided in the display device 400 , but the near-infrared photosensor controller 60 is integrated with the TFT substrate 30 b of the secondary display screen 230 .

[0172] It can be understood that the near-infrared photosensitive controller 60 is not limited to being integrated with the TFT substrate 30b of the secondary display screen 230; it can also be integrated with the TFT substrate 30a of the main display screen 210; Figure 1 The display device 100 shown as having only one display screen can also be integrated with the TFT substrate 30 of the liquid crystal display screen 110. The near-infrared light sensitive controller 60 is integrated with the TFT substrate of the display device, which not only does not affect the display function, but also effectively avoids the increase in the thickness of the display device due to the introduction of the near-infrared light sensitive controller 60.

[0173] See also Figure 7 The TFT substrate 30b of the secondary display screen 230 includes a transparent substrate 31b, a layer 33b of thin film transistors and electrodes for display, and an alignment film 15 stacked in sequence from bottom to top, wherein the alignment film 15 is relatively close to the liquid crystal layer 20b, and a polarizer 231 is arranged on the surface of the transparent substrate 31b facing away from the liquid crystal layer 20b.

[0174] Please also read Figure 7 and 8The substrate 61 of the near-infrared photosensitive controller 60 is shared with the transparent substrate 31b of the TFT substrate 30 of the secondary display screen 230, that is, the substrate 61 is provided with not only a thin film transistor and an electrode layer 33b for display, but also a thin film transistor 63a for near-infrared sensing, a photodiode 65, and a light shielding material unit 67. Figure 2 Compared with the near-infrared photosensitive controller 60a shown in FIG. Figure 8 The structures and locations of the thin film transistor 63a for near infrared sensing, the photodiode 65, and the light shielding material unit 67 disposed on the substrate 61 are similar to those of FIG. Figure 2 The substrate 61 is the same as shown, except that it is further provided with a thin film transistor 63b (liquid crystal switch) for display and a pixel electrode 90 (pixel electrode that forms an electric field to drive the liquid crystal to rotate) connected to the thin film transistor 63b.

[0175] The thin film transistor used for display is called a display thin film transistor 63b, and the thin film transistor used for near-infrared sensing is called a photosensitive thin film transistor 63a to distinguish the two. Figure 8 Only one display thin film transistor 63b and one photosensitive thin film transistor 63a are shown. Figure 8 As shown, both the display thin film transistor 63b and the photosensitive thin film transistor 63a on the substrate 61 are bottom-gate type, and the gate electrode 631b of the display thin film transistor 63b and the gate electrode 631a of the photosensitive thin film transistor 63a are arranged on the same surface of the substrate 61, specifically, on the surface of the passivation layer 71 stacked on the substrate 61 away from the substrate 61. An insulating layer 73 is stacked on the passivation layer 71 and completely covers the gate electrode 631b of the display thin film transistor 63b and the gate electrode 631a of the photosensitive thin film transistor 63a. The source electrode 633b, the drain electrode 635b and the semiconductor layer 637b of the display thin film transistor 63b, and the source electrode 633a, the drain electrode 635a and the semiconductor layer 637a of the photosensitive thin film transistor 63a are all arranged on the surface of the insulating layer 73 away from the substrate 61. A planarization layer 75 is stacked on the insulating layer 73 and completely covers the source 633b, drain 635b and semiconductor layer 637b of the display thin film transistor 63b and the source 633a, drain 635a and semiconductor layer 637a of the photosensitive thin film transistor 63a. The photodiode 65 is arranged on the drain 635a of the photosensitive thin film transistor 63a and is completely shielded by the drain 635a to prevent the light from the substrate 61 side from irradiating the photodiode 65. The shading material unit 67 is arranged on the surface of the planarization layer 75 away from the substrate 61 and covers at least one photodiode 65. In the embodiment of the present application, each shading material unit 67 covers a photodiode 65 and the photosensitive thin film transistor 63a connected to the photodiode 65. Figure 8 The photodiode 65 on the substrate 61 is a near-infrared light sensitive element (a silicon germanium-based PIN photodiode), which is electrically connected to the photosensitive thin film transistor 63a under the irradiation of near-infrared light.

[0176] Combined with reference Figure 8-11 The cathode of each photodiode 65 is connected to the drain 635 a of the photosensitive thin film transistor 63 a , and the anode is connected to the common electrode 70 . The common electrode 70 is disposed on the substrate 61 and connected to each photodiode 65 .

[0177] like Figure 8 As shown, the shading material unit 67 can not only cover a photodiode 65, a photosensitive thin film transistor 63a connected to the photodiode 65 and other metal wirings, but also cover the display thin film transistor 63b; on the one hand, it reduces light leakage near the metal wiring and the thin film transistors 63a and 63b, and on the other hand, it reduces the influence of stray visible light on the thin film transistor 63a and the photodiode 65, thereby improving the signal-to-noise ratio and the sensitivity.

[0178] and Figure 3 Compared with the near-infrared photosensitive controller 60b shown in FIG. Fig. 9 The structures and locations of the thin film transistor 63a for near infrared sensing, the photodiode 65, the light shielding material unit 67 and the up-conversion material film 50 disposed on the substrate 61 are similar to those shown in FIG. Figure 2 The same as shown, the difference is that the substrate 61 is also provided with a display thin film transistor 63b and electrodes for display. Fig. 9 Only one display thin film transistor 63b and one photosensitive thin film transistor 63a are shown. Figure 8 compared to, Fig. 9 The photodiode 65 on the substrate 61 shown is a visible light photosensor (silicon-based PIN-type photodiode), which is electrically connected to the photosensitive thin film transistor 63a under the irradiation of visible light; and also includes an up-conversion material film 50 located between the multiple shading material units 67 and the multiple photodiodes 65, and the up-conversion material film 50 is used to convert the received near-infrared light into visible light. Fig. 9 In the embodiment, the up-conversion material film 50 is a continuous whole layer that basically covers the planarization layer 75; in other embodiments, the up-conversion material film 50 may also include a plurality of conversion units (not shown) arranged at intervals, each conversion unit being located between a photodiode 65 and a shading material unit 67 corresponding to the photodiode 65.

[0179] Fig.10 and Fig.11Two schematic diagrams of the integration of the near-infrared photosensitive controller 60 and the TFT substrate 30b of the secondary display screen 230 are shown.

[0180] Combined with reference Fig.10 , the substrate 61 is not only provided with a plurality of scanning lines 62 extending along the first direction D1 and spaced in parallel with each other, and a plurality of signal lines 64 extending along the second direction D2 and spaced in parallel with each other; it is also provided with a plurality of gate lines 52 extending along the first direction D1 and spaced in parallel with each other, and a plurality of data lines 54 extending along the second direction D2 and spaced in parallel with each other. The gate lines 52 and data lines 54 used for display are independent of the scanning lines 62 and signal lines 64 used for near-infrared light sensing. The plurality of gate lines 52 and the plurality of data lines 54 are insulated from each other, cross and define a plurality of pixels for display, and the area defined by the intersection of two adjacent gate lines 52 and two adjacent data lines 54 is the area of ​​one pixel. A display thin film transistor 63b is provided in the area where each pixel is located, and the gate 631b of the display thin film transistor 63b is connected to a gate line 52, the source 633b is connected to a data line 54, and the drain 635b is connected to the pixel electrode 90. And in this embodiment, as Fig.10 As shown, a liquid crystal capacitor 21 and a storage capacitor 22 are connected in parallel between the pixel electrode 90 and the common electrode 70. The gate electrodes 631b of the display thin film transistors 63b in the same row along the first direction D1 are connected to the same gate line 52, and the source electrodes 633b of the display thin film transistors 63b in the same column along the second direction D2 are connected to the same data line 54. The display thin film transistors 63b can switch the on / off state of the display thin film transistors 63b according to the scanning signal provided to the gate line 52, electrically separate the pixel electrode 90 from the data line 54 or electrically connect the pixel electrode 90 to the data line 54, so as to realize the charging and voltage maintenance of the pixel electrode 90.

[0181] The gate electrode 631a of each photosensitive thin film transistor 63a is connected to a scan line 62, the source electrode 633a is connected to a signal line 64, and the drain electrode 635a is connected to a photodiode 65; the drain electrode 635a of the photodiode 65 is connected to the common electrode 70. The gate electrodes 631a of the photosensitive thin film transistors 63a in the same row along the first direction D1 are connected to the same scan line 62, and the source electrodes 633a of the photosensitive thin film transistors 63a in the same column along the second direction D2 are connected to the same signal line 64.

[0182] like Fig.10 As shown, each gate line 52 is adjacent to and corresponding to a scan line 62 ; each data line 54 is adjacent to and corresponding to a signal line 64 .

[0183] like Fig.10, two gate drivers 66 (GOA) and a circuit 68 (IC) are also provided on the substrate 61. The two gate drivers 66 (GOA) are located at both ends of the plurality of scan lines 62 and the plurality of gate lines 52, and each scan line 62 and each gate line 52 are respectively connected to a gate driver 66 (GOA), and each gate driver 66 is electrically connected to the circuit 68. The circuit 68 and the gate driver 66 cooperate to sequentially provide scan signals to the plurality of scan lines 62 and sequentially provide scan signals to the plurality of gate lines 52. Each signal line 64 and each data line 54 are connected to the circuit 68, and the circuit 68 is used to send electrical signals to each signal line 64 and each data line 54. It can be understood that the number of the gate driver 66 can also be set to one, which is only provided at one end of the plurality of scan lines 62.

[0184] In this embodiment, Fig.10 As shown, a pair of photosensitive thin film transistors 63a and photodiodes 65 for near-infrared light sensing can be set in each pixel; in other embodiments, a pair of photosensitive thin film transistors 63a and photodiodes 65 can also be periodically arranged in several adjacent pixels. The scanning frequency of the gate line 52 of the liquid crystal display and the scanning frequency of the scanning line 62 for near-infrared light sensing can be the same frequency or different frequencies.

[0185] Fig.11 and Fig.10 Basically the same, the difference is: Fig.11 The scanning line 62 for near infrared light sensing is shared with the gate line 52 for display. Fig.11As shown, the substrate 61 is provided with a plurality of gate lines 52 extending in a first direction D1 and spaced in parallel with each other, a plurality of data lines 54 extending in a second direction D2 and spaced in parallel with each other, and a plurality of signal lines 64 extending in a second direction D2 and spaced in parallel with each other. Since the near-infrared light sensing scan line 62 is shared with the display gate line 52, no separate scan line 62 is additionally provided. Each gate line 52 is connected to the gate 631b of the display thin film transistor 63b, and at least part of the gate lines 52 is also connected to the gate 631a of the photosensitive thin film transistor 63a. In this embodiment, if a pair of photosensitive thin film transistors 63a and photodiodes 65 for near-infrared light sensing are provided in each display pixel, each gate line 52 is shared as a scan line 62 and connected to the gate 631a of the photosensitive thin film transistor 63a, that is, a gate line 52 of the display device 400 is a scan line 62 of the near-infrared photosensitive controller 60. At this time, the total number of gate lines 52 of the display device 400 is equal to the total number of scan lines 62 of the near-infrared photosensitive controller 60. The gate 631a of each photosensitive thin film transistor 63a is connected to a gate line 52, the source 633a is connected to a signal line 64, and the drain 635a is connected to a photodiode 65; the photodiode 65 is connected to the common electrode 70. The gates 631a of the photosensitive thin film transistors 63a in the same row along the first direction D1 are connected to the same gate line 52, and the sources 633a of the photosensitive thin film transistors 63a in the same column along the second direction D2 are connected to the same signal line 64. Fig.11 As shown, each data line 54 is adjacent to and corresponding to a signal line 64 .

[0186] In this embodiment, Fig.11 As shown, a pair of photosensitive thin film transistors 63a and photodiodes 65 for near infrared light sensing are provided in each pixel. Since the scanning line 62 for near infrared light sensing is shared with the gate line 52 for display, and no separate scanning line 62 is provided, the scanning frequency of the display is the same as the scanning frequency of the near infrared light sensing.

[0187] In other embodiments, a pair of photosensitive thin film transistors 63a and photodiodes 65 may also be periodically arranged in several adjacent pixels; in this case, each gate line 52 of the plurality of gate lines 52 is also used as a scanning line 62; for example, any gate line 52 in several adjacent pixels provided with a pair of photosensitive thin film transistors 63a and photodiodes 65 may be shared with a scanning line 62 of a near-infrared photosensitizer controller 60; each gate line 52 is electrically connected to the display thin film transistor 63b, and the gate line 52 shared as the scanning line 62 is also electrically connected to the photosensitive thin film transistor 63a of the near-infrared photosensitizer controller 60; therefore, only part of the gate lines 52 in the display device 400 are shared with the scanning lines 62 of the near-infrared photosensitizer controller 60, and the total number of gate lines 52 of the display device 400 is greater than the total number of scanning lines 62 of the near-infrared photosensitizer controller 60.

[0188] The manner in which the near-infrared photosensitive controller 60 is integrated into the TFT substrate 30a of the main display screen 210 and the manner in which the near-infrared photosensitive controller 60 is integrated into the TFT substrate 30b of the sub-display screen 230 are the same as the manner in which the near-infrared photosensitive controller 60 is integrated into the TFT substrate 30b of the sub-display screen 230. For details, please refer to Fig.10 and Fig.11 conduct.

[0189] The polarizer of the sub-display screen 230 of the display device 400 of this embodiment can also be removed as in the third embodiment, but the backlight module 130 needs to emit polarized light, and the polarization direction of the polarized light is perpendicular to the transmission direction of the polarizer 43 under the main display screen 210 .

[0190] The display device 400 of the embodiment of the present application has the same technical effect as the display device 200 of the second embodiment. In addition, since the near-infrared photosensitivity controller 60 of the display device 400 is integrated into the layer of thin-film transistors and pixel electrodes of the TFT substrate of the main display screen 210 or the auxiliary display screen 230, it not only reduces the thickness of the device, but also reduces the process flow and reduces the cost.

[0191] Embodiment 5

[0192] See also Fig.12The display device 500 of the fifth embodiment of the present application is an organic light emitting display (OLED) display device, which includes a cathode layer 510, an organic layer 520, an anode layer 530 and a TFT substrate 540 stacked from top to bottom. The organic layer 520 is a multi-layer structure, which may include a hole injection layer (not shown), a hole transport layer (not shown), a light-emitting layer (not shown), an electron transport layer (not shown), and an electron injection layer (not shown) stacked in sequence. The TFT substrate 540 is used to provide a voltage different from that of the cathode layer 510 to the anode layer 530, and the organic layer 520 emits light under the voltage difference between the cathode layer 510 and the anode layer 530.

[0193] The near-infrared photosensitive controller 60 is disposed on a surface of the TFT substrate 540 away from the anode layer 530. The near-infrared photosensitive controller 60 may be the near-infrared photosensitive controller 60a or the near-infrared photosensitive controller 60b described above. The light shielding material unit (not shown) of the near-infrared photosensitive controller 60 is located between the TFT substrate 540 and the base material (not shown) of the near-infrared photosensitive controller 60.

[0194] The near-infrared photosensor controller 60 is arranged on the surface of the TFT substrate 540 away from the organic layer 520, which will not affect the display effect at all. At the same time, the setting of the near-infrared photosensor controller 60 enables the display device 500 of the embodiment of the present application to have functions such as pointing remote control, close-range writing, long-range marking, rapid positioning, and accurate object recognition, making the interaction more convenient.

[0195] It can be understood that the above-mentioned display devices 100, 200, 300, 400, 500 are correspondingly configured with a near-infrared light-emitting device for emitting near-infrared light to the display device. The near-infrared light-emitting device can be, for example, a near-infrared light-emitting device integrated in a remote control or a dedicated near-infrared laser pen.

[0196] It should be noted that the above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; the implementation methods of the present application and the features in the implementation methods can be combined with each other without conflict. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A near-infrared photosensitivity controller, characterized in that: include: Base material; A plurality of scanning lines are located on the substrate, extending along a first direction and spaced parallel to each other; A plurality of signal lines are located on the substrate, extending along the second direction and spaced apart from each other in parallel, and the plurality of signal lines are insulated and cross-linked with the plurality of scanning lines; A plurality of thin film transistors are located on the substrate and arranged in a plurality of rows along the first direction and a plurality of columns along the second direction, a gate of each thin film transistor is connected to a scan line, a source is connected to a signal line, gates of thin film transistors located in the same row are connected to the same scan line, and sources of thin film transistors located in the same column are connected to the same signal line; A plurality of photodiodes arranged in a matrix are located on the substrate, the plurality of photodiodes are arranged in one-to-one correspondence with the plurality of thin film transistors, each photodiode is connected to a drain of a thin film transistor, and each photodiode is electrically connected to the drain of the thin film transistor under the irradiation of near-infrared light; The drain electrode connected to the photodiode shields the photodiode to prevent light from the substrate side from irradiating the photodiode; as well as A plurality of shading material units are arranged one by one corresponding to the plurality of photodiodes, each shading material unit covers at least one side of a photodiode away from the substrate, and the shading material unit is used to allow near-infrared light to pass through but not visible light to pass through.

2. The near-infrared photosensitive controller according to claim 1, characterized in that: Each photodiode is a silicon-germanium-based PIN diode, and each photodiode includes a P-type doped silicon layer, an intrinsic silicon-germanium layer, and an N-type doped silicon layer stacked in sequence.

3. The near-infrared photosensitive controller according to claim 1 or 2, characterized in that: One end of each photodiode is connected to the drain of a thin film transistor, and the other end is connected to the common electrode.

4. The near-infrared photosensitive controller according to any one of claims 1 to 3, characterized in that: The near-infrared photosensor controller is applied to a display device and integrated with a thin film transistor (TFT) substrate of the display device.

5. A near-infrared photosensitivity controller, characterized in that: include: Base material; A plurality of scanning lines are located on the substrate, extending along a first direction and spaced parallel to each other; A plurality of signal lines are located on the substrate, extending along the second direction and spaced apart from each other in parallel, and the plurality of signal lines are insulated and cross-linked with the plurality of scanning lines; A plurality of thin film transistors are located on the substrate and arranged in a plurality of rows along the first direction and a plurality of columns along the second direction, a gate of each thin film transistor is connected to a scan line, a source is connected to a signal line, gates of thin film transistors located in the same row are connected to the same scan line, and sources of thin film transistors located in the same column are connected to the same signal line; A plurality of photodiodes arranged in a matrix are located on the substrate, the plurality of photodiodes are arranged one by one corresponding to the plurality of thin film transistors, each photodiode is connected to a drain of a thin film transistor, each photodiode is electrically connected to the drain of the thin film transistor under the irradiation of visible light, and the drain connected to the photodiode shields the photodiode to prevent light from the substrate side from irradiating the photodiode; A plurality of light-shielding material units, each of which is arranged in one-to-one correspondence with the plurality of photodiodes, each light-shielding material unit at least covers a side of a photodiode away from the substrate, and the light-shielding material unit is used to allow near-infrared light to pass through but not visible light to pass through; and An up-conversion material film is located between the light-shielding material unit and the plurality of photodiodes, and the up-conversion material film is used for converting the received near-infrared light into visible light.

6. The near-infrared photosensitive controller according to claim 5, characterized in that: The up-conversion material film includes nanoparticles of an oxide or halide matrix doped with trivalent rare earth particles.

7. The near-infrared photosensitive controller according to claim 5 or 6, characterized in that: The up-conversion material film is a continuous whole layer; or, the up-conversion material film includes a plurality of conversion units arranged at intervals, and each conversion unit is located between a photodiode and a light-shielding material unit corresponding to the photodiode.

8. The near-infrared photosensitive controller according to any one of claims 5 to 7, characterized in that: Each photodiode is a silicon-based PIN diode, and the PIN diode includes a P-type doped silicon layer, an intrinsic silicon layer, and an N-type doped silicon layer stacked in sequence.

9. The near-infrared photosensitive controller according to any one of claims 5 to 8, characterized in that: One end of each photodiode is connected to the drain of a thin film transistor, and the other end is connected to the common electrode.

10. The near-infrared photosensitive controller according to any one of claims 5 to 9, characterized in that: The near-infrared photosensor controller is applied to a display device and integrated with a thin film transistor (TFT) substrate of the display device.

11. A display device, characterized in that: It comprises a near-infrared light-sensitive controller as described in any one of claims 1 to 10, wherein the near-infrared light-sensitive controller is used to sense the position of the near-infrared light projected onto the display device.

12. The display device according to claim 11, characterized in that: The display device comprises a stacked liquid crystal display screen and a backlight module; the near-infrared photosensitive controller is arranged in the liquid crystal display screen, or in the backlight module, or between the liquid crystal display screen and the backlight module.

13. The display device according to claim 12, characterized in that: When the near-infrared photosensitivity controller is arranged in the liquid crystal display screen and integrated with the TFT substrate of the liquid crystal display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of gate lines are independent of the plurality of scanning lines; and the plurality of data lines are independent of the plurality of signal lines.

14. The display device according to claim 12, characterized in that: When the near-infrared photosensitivity controller is arranged in the liquid crystal display screen and integrated with the TFT substrate of the liquid crystal display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate, and the plurality of data lines are independent of the plurality of signal lines; each scanning line of the near-infrared photosensitivity controller shares a gate line on the substrate.

15. The display device according to claim 11, characterized in that: The display device comprises a main display screen, a sub-display screen and a backlight module which are stacked in sequence from top to bottom; The near-infrared photosensitivity controller is arranged in the main display screen, or in the sub-display screen, or in the backlight module, or between the main display screen and the sub-display screen, or between the sub-display screen and the backlight module.

16. The display device according to claim 15, characterized in that: The backlight module is used for emitting polarized light.

17. The display device according to claim 15 or 16, characterized in that: The pixel size of the secondary display screen is 1 to 10 times the pixel size of the primary display screen.

18. The display device according to any one of claims 15 to 17, characterized in that: When the near-infrared photosensor controller is arranged in the main display screen and integrated with the TFT substrate of the main display screen, or is arranged in the auxiliary display screen and integrated with the TFT substrate of the auxiliary display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate; the plurality of gate lines are independent of the plurality of scanning lines; and the plurality of data lines are independent of the plurality of signal lines.

19. The display device according to any one of claims 15 to 17, characterized in that: When the near-infrared photosensitivity controller is arranged in the main display screen and integrated with the TFT substrate of the main display screen, or is arranged in the auxiliary display screen and integrated with the TFT substrate of the auxiliary display screen, a plurality of gate lines extending along the first direction and spaced parallel to each other and a plurality of data lines extending along the second direction and spaced parallel to each other are also arranged on the substrate, and the plurality of data lines are independent of the plurality of signal lines; each scanning line of the near-infrared photosensitivity controller shares a gate line on the substrate.

20. The display device according to claim 11, characterized in that The display device is an organic electroluminescent display device, which includes a cathode layer, an organic layer, an anode layer and a TFT substrate stacked from top to bottom, and the near-infrared photosensitive controller is arranged on the surface of the TFT substrate away from the anode layer.

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