Driving substrate and display panel

By employing a three-layer structure of the first gate insulating layer and passivation layer in the driving substrate, the interlayer adhesion is enhanced, the diffusion path of metal atoms is extended, the problems of poor adhesion of the insulating layer and water vapor infiltration are solved, and the carrier concentration of the active layer and the stability of the driving substrate are improved.

CN114551482BActive Publication Date: 2026-04-14GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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Patent Information

Application Number
CN202210193607.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-03-01
Publication Date
2026-04-14
Estimated Expiration
2042-03-01

AI Technical Summary

Technical Problem

Poor adhesion of the insulating layer in the driving substrate leads to copper ion diffusion, affecting the channel carrier concentration of the active layer. Furthermore, the metal oxide active layer is sensitive to moisture and is prone to reaction, affecting its characteristics.

Method used

The first gate insulation layer adopts a three-layer structure, including a first barrier layer, a second barrier layer and a third barrier layer, which enhances the interlayer adhesion and extends the diffusion path of metal atoms through the passivation layer and adsorption layer, preventing interface defects and moisture penetration.

Benefits of technology

The adhesion of the insulating layer is improved, preventing metal atoms from diffusing into the active layer, reducing interface electron trapping, increasing the channel carrier concentration of the active layer and isolating moisture intrusion, thereby improving the performance of the driving substrate.

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Abstract

The application discloses a driving substrate and a display panel. The driving substrate comprises a substrate, a first gate, a first gate insulating layer, an active layer, a passivation layer, a source and a drain. The first gate is arranged on the substrate. The active layer is arranged on the substrate. The first gate insulating layer is arranged between the active layer and the first gate. The first gate insulating layer comprises a first barrier layer, a second barrier layer and a third barrier layer arranged in sequence. The adhesion between the first barrier layer and the second barrier layer and / or the adhesion between the second barrier layer and the third barrier layer is greater than the adhesion between the first barrier layer and the third barrier layer. The passivation layer is arranged on the substrate. The source and the drain are arranged on the passivation layer and are electrically connected to the active layer respectively.
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