Dual hot spot protection method, apparatus, and terminal device

Abstract

The application is suitable for the technical field of solar photovoltaic power generation, and provides a double hot spot protection method, device and terminal equipment. The double hot spot protection method comprises the following steps: when a hot spot phenomenon occurs, the position of the hot spot and the breakdown condition of a first Schottky diode are obtained; and based on the position of the hot spot and the breakdown condition of the first Schottky diode, hot spot protection is performed. The application can simply and quickly realize double hot spot protection of a photovoltaic module.

Description

Technical Field

[0001] This application belongs to the field of solar photovoltaic power generation technology, and in particular relates to a dual hot spot protection method, device and terminal equipment. Background Technology

[0002] Photovoltaic modules are used in a variety of environments, and it is inevitable that some modules will be partially shaded by trees, clouds, or buildings. This can cause hot spots, which will cause the shaded modules to heat up and, in severe cases, burn out. To prevent hot spots from damaging the modules, a bypass diode design is generally used. However, in environments with severe shading, the bypass diode, as a hot spot protection component, is used more frequently, which makes it more susceptible to burnout and breakdown.

[0003] The purpose of this invention is to provide a dual hot spot protection method for photovoltaic modules in environments where shading is frequent. When the bypass circuit chip fails, the backup bypass circuit chip can be activated easily and quickly to continue hot spot protection. Summary of the Invention

[0004] This application provides a dual hot spot protection method, apparatus, and terminal equipment, offering a hot spot protection means for photovoltaic modules that exhibit hot spot phenomena in shaded environments.

[0005] This application is achieved through the following technical solution:

[0006] In a first aspect, embodiments of this application provide a dual hot spot protection method. This method is based on a dual hot spot protection photovoltaic module circuit, which includes: multiple diode units, multiple sets of photovoltaic module main strings, and multiple MOSFETs. The multiple sets of photovoltaic module main strings correspond one-to-one with the multiple diode units. The number of multiple MOSFETs is less than or equal to the number of sets of photovoltaic module main strings. The multiple MOSFETs are connected sequentially to each other, and the multiple diode units are connected sequentially to each other.

[0007] Each photovoltaic (PV) module main string comprises an even number of PV module sub-strings. These sub-strings are divided into two groups. The first end of the first group of sub-strings is connected to the first end of the corresponding diode unit. The first end of the second group of sub-strings is connected to the second end of the corresponding diode unit. The second ends of the first and second groups of sub-strings are also connected, and simultaneously connected to the source and drain of one of the multiple MOSFETs. At least one of the diode units includes a first Schottky diode connected in parallel and a push-button closing switch circuit. The remaining diode units all include a first Schottky diode.

[0008] The aforementioned dual hotspot protection method includes: when a hotspot phenomenon occurs, obtaining the location of the hotspot and the breakdown status of the first Schottky diode; and performing hotspot protection based on the location of the hotspot and the breakdown status of the first Schottky diode.

[0009] In conjunction with the first aspect, in some possible implementations, the push-button closure switch circuit includes a second Schottky diode and a push-button closure switch connected in sequence.

[0010] In conjunction with the first aspect, in some possible implementations, hot spot protection is performed based on the location of the hot spot and the breakdown status of the first Schottky diode. Specifically, this includes: when a hot spot occurs in the main string of photovoltaic modules connected to the diode unit, the first Schottky diode is turned on to provide hot spot protection; when a hot spot occurs in the main string of photovoltaic modules connected to the diode unit and the first Schottky diode is broken down, the first Schottky diode device is removed and the button is pressed to close the switch; when a hot spot occurs in two adjacent main strings of photovoltaic modules, the MOSFETs connected to these two main strings of photovoltaic modules are turned on to provide hot spot protection; when the MOSFET fails, the first Schottky diode or the second Schottky diode is turned on to provide hot spot protection.

[0011] In conjunction with the first aspect, in some possible implementations, the forward conduction voltage range of the first Schottky diode and the second Schottky diode is 0.3V-0.6V; the forward conduction voltage range of the MOSFET is 0.08V-0.2V.

[0012] In conjunction with the first aspect, in some possible implementations, each photovoltaic module substring has the same number of parallel paths, each path includes multiple photovoltaic power sources connected in series, and the number of photovoltaic power sources connected in series on each path is the same.

[0013] In conjunction with the first aspect, in some possible implementations, the MOSFET is an N-channel enhancement-mode MOSFET.

[0014] In conjunction with the first aspect, in some possible implementations, the dual hot spot protection photovoltaic module circuit also includes a diode, with the source of the MOSFET connected to the anode of the diode and the drain of the MOSFET connected to the cathode of the diode.

[0015] Secondly, embodiments of this application provide a dual hot spot protection device, comprising: an acquisition module, used to acquire the location of the hot spot and the breakdown status of the first Schottky diode when a hot spot phenomenon occurs; and a protection module, used to perform hot spot protection based on the location of the hot spot and the breakdown status of the first Schottky diode.

[0016] Thirdly, embodiments of this application provide a terminal device, including: a processor and a memory, the memory being used to store a computer program, wherein the processor, when executing the computer program, implements the dual hot spot protection method as described in any of the first aspects.

[0017] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when executed by a processor, implements the dual hotspot protection method as described in any of the first aspects.

[0018] Fifthly, embodiments of this application provide a computer program product that, when run on a terminal device, causes the terminal device to execute the dual hotspot protection method described in any one of the first aspects.

[0019] It is understood that the beneficial effects of the second to fifth aspects mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here.

[0020] The beneficial effects of the embodiments in this application compared with the prior art are:

[0021] This application achieves dual hot spot protection for photovoltaic modules through diode units and MOSFETs. Since the diode units and MOSFETs can start working when hot spots are generated in the photovoltaic modules, the photovoltaic modules can still operate normally even when hot spots are generated. When the diode is broken down, the diode can be replaced by the diode unit. Therefore, dual hot spot protection for photovoltaic modules can be achieved simply and quickly. Compared with the prior art, it has the advantages of comprehensive consideration, ease of operation, and greater safety.

[0022] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this specification. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram illustrating an application scenario of the dual hot spot protection method provided in the embodiments of this application;

[0025] Figure 2 This is a partial structural schematic diagram of the photovoltaic module circuit with dual hot spot protection provided in the embodiments of this application;

[0026] Figure 3 This is a schematic flowchart of the dual hot spot protection method provided in the embodiments of this application;

[0027] Figure 4 This is a schematic diagram of a photovoltaic module circuit with dual hot spot protection provided in an embodiment of this application;

[0028] Figure 5 This is a schematic diagram of the structure of the dual hot spot protection device provided in the embodiments of this application;

[0029] Figure 6 This is a schematic diagram of the structure of the terminal device provided in the embodiments of this application. Detailed Implementation

[0030] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0031] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0032] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0033] As used in this application specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if detected [the described condition or event]" may be interpreted, depending on the context, as meaning "once determined," "in response to determination," "once detected [the described condition or event]," or "in response to detection [the described condition or event]."

[0034] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0035] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0036] For example, embodiments of this application can be applied to, for example... Figure 1 In the exemplary scenario shown, the hot spot location acquisition device S1 acquires hot spot location data and sends it to the hot spot protection device S2, which then performs hot spot protection based on the hot spot location.

[0037] The following combination Figure 1 The dual hot spot protection method of this application is described in detail.

[0038] One embodiment of this application provides a dual hot spot protection method based on a dual hot spot protection photovoltaic module circuit, which is as follows: Figure 2 As shown, the dual hot spot protection photovoltaic module circuit includes: multiple diode units 10, multiple sets of photovoltaic module main strings 20, and multiple MOSFETs. The multiple sets of photovoltaic module main strings 20 correspond one-to-one with the multiple diode units 10. The number of multiple MOSFETs 30 is less than or equal to the number of sets of photovoltaic module main strings 20. The multiple MOSFETs 30 are connected sequentially, and the multiple diode units 10 are connected sequentially.

[0039] Each photovoltaic module main string 20 includes an even number of photovoltaic module sub strings 200. The even number of photovoltaic module sub strings 200 are divided into two groups. The first end of the first group of photovoltaic module sub strings is connected to the first end of the corresponding diode unit 10. The first end of the second group of photovoltaic module sub strings is connected to the second end of the corresponding diode unit 10. The second end of the first group of photovoltaic module sub strings is connected to the second end of the second group of photovoltaic module sub strings. At the same time, it is connected to the source and drain of one of the multiple MOSFETs 30.

[0040] At least one of the plurality of diode units 10 includes: a first Schottky diode 100 and a push-button closing switch circuit 110 connected in parallel, and the remaining diode units include the first Schottky diode 100.

[0041] For example, the photovoltaic module sub-string 200 is used to generate photovoltaic voltage, the diode unit 10 and the MOSFET 30 are used to isolate the photovoltaic module sub-string 200 from hot spot effects, and the push-button closing switch circuit 110 is used to replace the damaged first Schottky diode 100.

[0042] For example, the push-button closing switch circuit 110 includes a second Schottky diode 1110 and a push-button closing switch 1120 connected in sequence. The push-button closing switch 1120 is used to control the second Schottky diode 1110 to turn on or off.

[0043] Figure 3 This is a schematic flowchart of a dual hot spot protection method provided in an embodiment of this application, referring to... Figure 3 The detailed description of this dual hot spot protection method is as follows:

[0044] In step 301, when a hot spot phenomenon occurs, the location of the hot spot and the breakdown status of the first Schottky diode are obtained.

[0045] For example, the location of hot spots can be determined by monitoring the temperature of the entire photovoltaic module using a temperature sensor. When the temperature difference between a certain area and the surrounding area is large, it can be determined that a hot spot effect has occurred in that area.

[0046] In step 302, hot spot protection is performed based on the location of the hot spot and the breakdown status of the first Schottky diode.

[0047] For example, hot spot protection is implemented based on the location of the hot spot and the breakdown status of the first Schottky diode, specifically including: when a hot spot occurs in the main string of the photovoltaic module connected to the diode unit, the first Schottky diode is turned on to provide hot spot protection; when a hot spot occurs in the main string of the photovoltaic module connected to the diode unit and the first Schottky diode is broken down, the first Schottky diode device is removed and the button is pressed to close the switch; when a hot spot occurs in two adjacent main strings of photovoltaic modules, the MOSFETs connected to these two main strings of photovoltaic modules are turned on to provide hot spot protection; when the MOSFETs fail, the first Schottky diode or the second Schottky diode is turned on to provide hot spot protection.

[0048] For example, the forward conduction voltage range of the first Schottky diode and the second Schottky diode is 0.3V-0.6V; the forward conduction voltage range of the MOSFET is 0.08V-0.2V.

[0049] For example, each photovoltaic module substring has the same number of parallel paths, each path includes multiple photovoltaic power sources connected in series, and the number of photovoltaic power sources connected in series on each path is the same.

[0050] For example, the MOSFET is an N-channel enhancement-mode MOSFET.

[0051] For example, the dual hot spot protection photovoltaic module circuit also includes a diode, with the source of the MOSFET connected to the anode of the diode and the drain of the MOSFET connected to the cathode of the diode.

[0052] For example, Figure 4 This is a schematic diagram of a photovoltaic module circuit with dual hot spot protection provided in an embodiment of this application. As shown in the figure, the first Schottky diode D1 is connected to the first Schottky diode D2, and the first Schottky diode D2 is connected to the first Schottky diode D3; the second Schottky diode D4 is connected in series with the push-button switch S1 and in parallel across the first Schottky diode D1; the second Schottky diode D5 is connected in series with the push-button switch S2 and in parallel across the first Schottky diode D3; the first end of the photovoltaic module sub-string C1 is connected to the first end of the first Schottky diode D1, the first end of the photovoltaic module sub-string C2 is connected to the second end of the first Schottky diode D1, the second end of the photovoltaic module sub-string C1 and the second end of the photovoltaic module sub-string C2 are connected, and are connected to the source and drain of the first MOSFET Q1; The first end of photovoltaic module sub-string C3 is connected to the first end of the first Schottky diode D2; the first end of photovoltaic module sub-string C4 is connected to the second end of the first Schottky diode D2; the second ends of photovoltaic module sub-string C3 and C4 are connected, and are also connected to the source and drain of the second MOSFET Q2; the first end of photovoltaic module sub-string C5 is connected to the first end of the first Schottky diode D3; the first end of photovoltaic module sub-string C6 is connected to the second end of the first Schottky diode D3; the second ends of photovoltaic module sub-string C5 and C6 are connected; the gate of the first MOSFET Q1 is connected to the source and drain of the second MOSFET Q2; the gate of the second MOSFET is connected to the second ends of photovoltaic module sub-strings C5 and C6 of the third group of photovoltaic module main strings.

[0053] Specifically, the dual hot spot protection photovoltaic module has two hot spot protection mechanisms. The first hot spot protection is as follows: when a hot spot occurs in photovoltaic module sub-string C1, the first Schottky diode D1 starts working; when hot spots occur in photovoltaic module sub-strings C2 and C3, the MOSFET Q1 starts working; when hot spots occur in photovoltaic module sub-strings C4 and C5, the MOSFET Q2 starts working; and when a hot spot occurs in photovoltaic module sub-string C6, the first Schottky diode D3 starts working.

[0054] The second type of hot spot protection: When the first Schottky diode D1 fails, remove the first Schottky diode D1, press the button to close switch S1, and activate the second Schottky diode D4; when the first Schottky diode D3 fails, remove the first Schottky diode D3, press the button to close switch S2, and activate the second Schottky diode D5; when the MOSFET Q1 fails, remove the MOSFET Q1. If a hot spot occurs in the photovoltaic module sub-string C2 at this time, the first Schottky diode D1 or the second Schottky diode D4 provides hot spot protection; if a hot spot occurs in the photovoltaic module sub-string C3 at this time, the first Schottky diode D2 provides hot spot protection; when the MOSFET Q2 fails, remove the MOSFET Q2. If a hot spot occurs in the photovoltaic module sub-string C4 at this time, the first Schottky diode D2 provides hot spot protection; if a hot spot occurs in the photovoltaic module sub-string C5 at this time, the first Schottky diode D3 or the second Schottky diode D5 provides hot spot protection.

[0055] The aforementioned dual hot spot protection method achieves dual hot spot protection for photovoltaic modules through diode units and MOSFETs. Since the diode units and MOSFETs can start working when hot spots are generated in the photovoltaic modules, the photovoltaic modules can still operate normally even when hot spots are generated. When the diode is broken down, it can be replaced by the diode unit. Therefore, dual hot spot protection for photovoltaic modules can be achieved simply and quickly. Compared with existing technologies, it has the advantages of comprehensive consideration, ease of operation, and greater safety.

[0056] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0057] Corresponding to the dual hot spot protection method described in the above embodiments, Figure 5 A structural block diagram of the dual hot spot protection device provided in the embodiments of this application is shown. For ease of explanation, only the parts related to the embodiments of this application are shown.

[0058] See Figure 5 The dual hot spot protection device in this application embodiment may include an acquisition module 401 and a protection module 402.

[0059] Optionally, the acquisition module 401 is used to acquire the location of the hot spot and the breakdown status of the first Schottky diode when the hot spot phenomenon occurs.

[0060] Optionally, the protection module 402 is used to perform hot spot protection based on the location of the hot spot and the breakdown status of the first Schottky diode.

[0061] For example, the protection module 402 is specifically used for: when a hot spot phenomenon occurs in the main string of the photovoltaic module connected to the diode unit, the first Schottky diode is turned on to provide hot spot protection; when a hot spot phenomenon occurs in the main string of the photovoltaic module connected to the diode unit and the first Schottky diode is broken down, the first Schottky diode device is removed and the button is pressed to close the switch; when a hot spot phenomenon occurs in two adjacent main strings of photovoltaic modules, the MOSFETs connected to these two main strings of photovoltaic modules are turned on to provide hot spot protection; when the MOSFETs fail, the first Schottky diode or the second Schottky diode is turned on to provide hot spot protection.

[0062] For example, the forward conduction voltage range of the first Schottky diode and the second Schottky diode is 0.3V-0.6V; the forward conduction voltage range of the MOSFET is 0.08V-0.2V.

[0063] For example, each photovoltaic module substring has the same number of parallel paths, each path includes multiple photovoltaic power sources connected in series, and the number of photovoltaic power sources connected in series on each path is the same.

[0064] For example, the MOSFET is an N-channel enhancement-mode MOSFET.

[0065] For example, the dual hot spot protection photovoltaic module circuit also includes a diode, with the source of the MOSFET connected to the anode of the diode and the drain of the MOSFET connected to the cathode of the diode.

[0066] It should be noted that the information interaction and execution process between the above-mentioned devices / units are based on the same concept as the method embodiments of this application. For details on their specific functions and technical effects, please refer to the method embodiments section, and they will not be repeated here.

[0067] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0068] This application also provides a terminal device, see [link to relevant documentation] Figure 6 The terminal device 500 may include at least one processor 510 and a memory 520, the memory 520 being used to store computer programs. The processor 510 is used to call and run the computer programs stored in the memory 520 to implement the steps in any of the above method embodiments, for example... Figure 3 Steps 301 to 302 in the illustrated embodiment. Alternatively, when the processor 510 executes the computer program, it implements the functions of each module / unit in the above-described device embodiments, for example... Figure 5 The functions of modules 401 to 402 are shown.

[0069] For example, a computer program may be divided into one or more modules / units, one or more of which are stored in memory 520 and executed by processor 510 to complete this application. The one or more modules / units may be a series of computer program segments capable of performing specific functions, which describe the execution process of the computer program in terminal device 500.

[0070] Those skilled in the art will understand that Figure 6 This is merely an example of a terminal device and does not constitute a limitation on the terminal device. It may include more or fewer components than shown, or combine certain components, or different components, such as input / output devices, network access devices, buses, etc.

[0071] The processor 510 can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or any conventional processor.

[0072] The memory 520 can be an internal storage unit of the terminal device or an external storage device, such as a plug-in hard drive, a smart media card (SMC), a secure digital card (SD), or a flash card. The memory 520 is used to store the computer program and other programs and data required by the terminal device. The memory 520 can also be used to temporarily store data that has been output or will be output.

[0073] The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus, etc. Buses can be categorized as address buses, data buses, control buses, etc. For ease of illustration, the buses shown in the accompanying drawings are not limited to a single bus or a single type of bus.

[0074] The dual hotspot protection method provided in this application embodiment can be applied to terminal devices such as dual hotspot protection circuits, computers, wearable devices, vehicle-mounted devices, tablet computers, laptops, netbooks, and mobile phones. This application embodiment does not impose any restrictions on the specific type of terminal device.

[0075] This application also provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps described in the various embodiments of the dual hotspot protection method.

[0076] This application provides a computer program product that, when run on a mobile terminal, enables the mobile terminal to implement the steps described in the various embodiments of the dual hotspot protection method.

[0077] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments of this application can be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include at least: any entity or device capable of carrying computer program code to a photographing device / terminal device, a recording medium, a computer memory, a read-only memory (ROM), a random access memory (RAM), an electrical carrier signal, a telecommunication signal, and a software distribution medium. Examples include USB flash drives, portable hard drives, magnetic disks, or optical disks. In some jurisdictions, according to legislation and patent practice, computer-readable media cannot be electrical carrier signals or telecommunication signals.

[0078] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0079] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0080] In the embodiments provided in this application, it should be understood that the disclosed apparatus / network devices and methods can be implemented in other ways. For example, the apparatus / network device embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0081] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0082] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A dual hot spot protection method, characterized in that, This method is based on a dual hot spot protection photovoltaic module circuit, which includes: multiple diode units, multiple sets of photovoltaic module main strings, and multiple MOSFETs. The multiple sets of photovoltaic module main strings correspond one-to-one with the multiple diode units. The number of multiple MOSFETs is less than or equal to the number of sets of photovoltaic module main strings. The multiple MOSFETs are connected sequentially, and the multiple diode units are connected sequentially. Each photovoltaic module main string includes an even number of photovoltaic module sub strings. The even number of photovoltaic module sub strings are divided into two groups. The first end of the first group of photovoltaic module sub strings is connected to the first end of the corresponding diode unit. The first end of the second group of photovoltaic module sub strings is connected to the second end of the corresponding diode unit. The second end of the first group of photovoltaic module sub strings is connected to the second end of the second group of photovoltaic module sub strings, and is simultaneously connected to the source and drain of one of the multiple MOS transistors. At least one of the plurality of diode units includes: a first Schottky diode and a push-button closing switch circuit connected in parallel; the remaining diode units include a first Schottky diode. The dual hot spot protection method includes: When a hot spot phenomenon occurs, the location of the hot spot and the breakdown status of the first Schottky diode are obtained; Hot spot protection is implemented based on the location of the hot spot and the breakdown status of the first Schottky diode.

2. The dual hot spot protection method as described in claim 1, characterized in that, The push-button closing switch circuit includes a second Schottky diode and a push-button closing switch connected in sequence.

3. The dual hot spot protection method as described in claim 2, characterized in that, The hotspot protection based on the location of the hotspot and the breakdown status of the first Schottky diode specifically includes: When a hot spot phenomenon occurs in the main string of the photovoltaic module connected to the diode unit, the first Schottky diode is turned on to protect against the hot spot. When a hot spot occurs in the main string of the photovoltaic module connected to the diode unit, and the first Schottky diode is broken down, remove the first Schottky diode device and press the button to close the switch; When hot spot phenomenon occurs in two adjacent photovoltaic module main strings, the MOS transistors connected to these two photovoltaic module main strings are turned on to protect against hot spot. When the MOSFET fails, the first Schottky diode or the second Schottky diode is turned on to protect against hot spots.

4. The dual hot spot protection method as described in claim 2, characterized in that, The forward conduction voltage range of the first Schottky diode and the second Schottky diode is 0.3V-0.6V; the forward conduction voltage range of the MOSFET is 0.08V-0.2V.

5. The dual hot spot protection method as described in claim 1, characterized in that, Each of the photovoltaic module substrings has the same number of parallel paths, each path includes multiple photovoltaic power sources connected in series, and the number of photovoltaic power sources connected in series on each path is the same.

6. The dual hot spot protection method as described in claim 1, characterized in that, The MOSFET is an N-channel enhancement-mode MOSFET.

7. The dual hot spot protection method as described in claim 1, characterized in that, The dual hot spot protection photovoltaic module circuit also includes a diode, with the source of the MOS transistor connected to the anode of the diode and the drain of the MOS transistor connected to the cathode of the diode.

8. A dual hot spot protection device, characterized in that, The apparatus, applied to the dual hot spot protection method according to any one of claims 1-7, comprises: The acquisition module is used to acquire the location of the hot spot and the breakdown status of the first Schottky diode when a hot spot phenomenon occurs. The protection module is used to perform hot spot protection based on the location of the hot spot and the breakdown status of the first Schottky diode.

9. A terminal device, characterized in that, include: A processor and a memory, the memory for storing a computer program, the processor for calling and running the computer program stored in the memory to perform the dual hot spot protection method as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that, When the computer program is executed by the processor, it implements the dual hot spot protection method as described in any one of claims 1 to 7.

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