Device for metal surface modification

Abstract

The present application discloses a device for metal surface modification, which comprises: a box body, the box body comprises a gas cooling system, a rare gas input system, an exhaust gas exhaust system and a sample placement table; the box body is also provided with an isolation generating chamber, the isolation generating chamber is respectively connected to the gas cooling system and the exhaust gas exhaust system; the sample placement table is arranged below the isolation generating chamber, wherein a metal sheet is placed on the sample placement table; the isolation generating chamber is also provided with a plasma discharge generator, the rare gas input system is connected to the plasma discharge generator, and the plasma discharge generator is used to generate a jet plasma and spray it onto the surface of the metal sheet. Through the present application, it is achieved to effectively excite a plasma jet under an atmospheric pressure environment, which can induce the excitation of a liquid surface modifier and introduce organic active groups on the metal surface.

Description

Technical Field

[0001] The invention relates to a material surface modification technology, in particular to a device for metal surface modification. Background Art

[0002] Low-temperature plasma polymerization, also known as plasma enhanced chemical vapor deposition (PECVD), is a low-temperature, low-pressure plasma surface modification technology that is achieved by glow discharge of single or mixed organic vapors. Under the high-energy state of current discharge, the chemical bonds of volatile gaseous monomers are broken, and they are covalently bonded and reorganized on the surface of the material without destroying their basic chemical functions. Ultimately, a large number of stable and highly specific chemical functional groups are generated on the surface of the material, which significantly improves the surface reactivity of the material. The thickness of this plasma polymer is a nano-scale covalent chemical bond, which is uniform and consistent. There is no residual stress between the coating and the material, and the bond is strong. PECVD has a shallow depth of action, does not affect the physical and chemical properties of the material itself, and is simple to operate. The surface modification results are easy to control and have good repeatability. This is the biggest advantage of applying PECVD to metal surface modification.

[0003] Existing discharge technologies are mostly carried out in open spaces, which cannot ensure airtightness and may introduce gas impurities from the air into the plasma. Summary of the invention

[0004] The main purpose of the present invention is to provide a device for metal surface modification to solve the problem of poor excitation effect caused by gas discharge in an open space in the prior art.

[0005] According to an embodiment of the present invention, a device for metal surface modification is proposed, which includes: a box body, the box body includes a gas cooling system, a rare gas input system, an exhaust gas exhaust system and a sample placement table; an isolation generating chamber is also provided in the box body, and the isolation generating chamber is respectively connected to the gas cooling system and the exhaust gas exhaust system; the sample placement table is arranged below the isolation generating chamber, wherein a metal sheet is placed on the sample placement table; the isolation generating chamber also has a plasma discharge generator, the rare gas input system is connected to the plasma discharge generator, and the plasma discharge generator is used to generate jet plasma and spray it onto the surface of the metal sheet.

[0006] Wherein, the gas cooling system comprises: a nitrogen intake flow meter, a nitrogen intake flow adjustment knob, a nitrogen solenoid valve switch and a gas cooler.

[0007] Wherein, the exhaust gas exhaust system includes: an exhaust gas exhaust flow meter, an exhaust gas exhaust flow adjustment knob, an exhaust gas exhaust pump, and an exhaust gas solenoid valve switch.

[0008] Wherein, the rare gas input system includes: a rare gas intake flow meter, a rare gas intake flow adjustment knob, and a rare gas solenoid valve switch.

[0009] The plasma discharge generator comprises: a plasma generator outer tube, a plasma generator high-voltage electrode, a plasma generator cathode, a plasma generator liquid tube, a generator backflow shield, and a plasma excitation gas inlet; the plasma generator high-voltage electrode and the plasma generator cathode are respectively arranged at the top and the bottom of the plasma generator outer tube, and the plasma generator high-voltage electrode and the plasma generator cathode constitute a dielectric barrier discharge structure; the plasma generator liquid tube is arranged inside the plasma generator high-voltage electrode, the plasma excitation gas inlet is arranged at the top of the plasma generator outer tube, and the rare gas enters the plasma generator outer tube through the plasma excitation gas inlet; the lower part of the plasma generator outer tube is opposite to the sample placement table.

[0010] Wherein, the plasma generator liquid pipe comprises an inlet, and the inlet of the plasma generator liquid pipe is arranged outside the isolation generating chamber.

[0011] The isolation chamber is provided with a through hole, and the sample placement platform is inserted into the isolation chamber through the through hole.

[0012] According to the technical solution of the present invention, by using nitrogen to exhaust the air in a closed cavity to form an oxygen-free environment, the liquid surface modifier is introduced into the interior of the device and excited to form plasma, and fixed on the surface of the metal sheet, thereby achieving effective excitation of the plasma jet under atmospheric pressure environment, and being able to induce the excitation of the liquid surface modifier, thereby introducing organic active groups on the metal surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0014] Figure 1 is a three-dimensional schematic diagram of a box according to an embodiment of the present invention;

[0015] Figure 2 is a perspective view of a box according to an embodiment of the present invention;

[0016] Figure 3is a schematic diagram of an isolation generating chamber according to an embodiment of the present invention;

[0017] Figure 4 is a schematic diagram of a plasma discharge generator according to an embodiment of the present invention;

[0018] Figure 5 2 is a schematic diagram of the interior of a box according to an embodiment of the present invention. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0020] The technical solutions provided by various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0021] refer to Figures 1 to 5 The device for metal surface modification includes a box 1, the front of the box 1 has a through hole, and the sample placement table 11 can be inserted into the box 1 through the through hole. A refrigeration system controller 12 is arranged on the side of the box 1, and the target temperature of the cooling system can be set by the refrigeration system controller 12. The controller is equipped with a temperature probe, and the temperature is set by the button on the controller. When the set temperature is higher than the temperature collected by the temperature probe, the refrigeration system does not work. When the set temperature is lower than the temperature collected by the temperature probe, the cooling system works to cool down the gas refrigeration block. In addition, a plurality of foot pads 13 are also arranged at the bottom of the box.

[0022] In the embodiment of the present application, a gas cooling system is provided in the box body 1, and the gas cooling system is used to cool the isolated generating chamber. Specifically, the gas cooling system includes: a nitrogen intake flow meter 21, a nitrogen intake flow adjustment knob 22, a nitrogen solenoid valve switch 23, and a gas cooling device 24. Among them, the nitrogen intake flow meter 21 is connected to an external nitrogen supply device (not shown) through a nitrogen intake pipe 25, and is connected to the gas cooling device 24 through a pipeline 26. The gas cooling device 24 is used to cool the nitrogen, and the cooled nitrogen is input into the isolated generating chamber through the gas cooling device 24 and the pipeline 27.

[0023] In the embodiment of the present application, an exhaust gas exhaust system is also provided in the box body 1. Specifically, the exhaust gas exhaust system includes: an exhaust gas exhaust flow meter 31, an exhaust gas exhaust flow adjustment knob 32, an exhaust gas exhaust pump 33, and an exhaust gas solenoid valve switch. The exhaust gas generated in the isolation generating chamber enters the exhaust gas exhaust flow meter 31 through the pipe 34, then enters the exhaust gas exhaust pump 33 through the pipe 35, and finally is discharged through the pipe 36. The exhaust gas exhaust flow adjustment knob 32 is used to control the exhaust gas exhaust flow control, and the exhaust gas exhaust flow meter 31 is used to monitor the exhaust gas flow rate. Figure 1 The exhaust gas exhaust system also includes an exhaust gas exhaust pump adjustment knob 38 for adjusting the exhaust gas exhaust pump 33.

[0024] In the embodiment of the present application, a rare gas input system is also provided in the box 1, specifically, the rare gas input system comprises: a rare gas inlet flow meter 41, a rare gas inlet flow adjustment knob 42, and a rare gas solenoid valve switch 43. The rare gas (argon) is introduced into the argon gas flow meter 41 through the argon gas inlet pipe 44, and then enters the plasma excitation gas inlet 46 through the argon gas flow meter 41 and the pipeline 45.

[0025] An isolation chamber 5 is also provided inside the housing 1, and the isolation chamber 5 includes an upper cover 51 and a lower cover 52. The upper cover 51 is provided with a nitrogen gas pipe quick-connect interface 53 for introducing nitrogen, which is used as a gas to exhaust the air in the chamber, and the temperature generated by the discharge of the plasma generator in the isolation chamber 5 can be reduced by the cooled nitrogen entering the sealed chamber. The interface 53 needs to be sealed, and an exhaust gas exhaust quick-connect interface 54 is installed at the lower part of the isolation chamber 5, which is used to exhaust the exhaust gas generated in the sealed chamber and provide a negative pressure environment. A through hole is opened on the front of the isolation chamber for installing a sample placement plate 15, through which the metal sheet sample to be processed can be placed or replaced.

[0026] A plasma discharge generator 6 is arranged in the isolation generating chamber 5, and the plasma discharge generator 6 is composed of a plasma generator outer tube 61, a plasma generator high voltage electrode 62, a plasma generator cathode 63, a plasma generator liquid tube 64, a generator backflow shield 65, a plasma excitation gas inlet 66, etc. Among them, the rare gas argon flows in through the plasma excitation gas inlet 46, and forms an argon gas flow inside the plasma generator outer tube 61. The plasma generator high voltage electrode 62 is installed on the top of the plasma generator outer tube 61, and a part of it is arranged in the plasma generator outer tube 61 and keeps coaxial with the plasma generator outer tube 61. The plasma generator liquid tube 64 is installed inside the plasma generator high voltage electrode 62, and the jet plasma 67 flows into the upper end of the plasma generator liquid tube 64 from the plasma generator liquid inlet tube 68, flows out at the lower part of the plasma generator liquid tube 64, and reaches the lower metal sheet inside the plasma generator outer tube 61. The negative electrode 63 of the plasma generator is installed at the lower part of the outer tube 61 of the plasma generator, and forms a dielectric barrier discharge structure with the high-voltage electrode 62 in the outer tube 61 of the plasma generator. The jet plasma 67 flowing into the inlet of the plasma generator liquid tube 64 is just in the center of this dielectric barrier discharge. When the plasma generator discharges, the jet plasma 67 flowing through can be ionized and finally acts on the metal sheet surface 16. A generator anti-backflow cover 65 is arranged outside the jet plasma 67 and the metal sheet surface. The generator anti-backflow cover 65 is used to isolate the gas outside the backflow cover from flowing into the inside of the backflow cover, causing the plasma generator to be disturbed by stray gases.

[0027] The metal sheet sample placement table is provided with a recessed groove for placing metal sheet samples with a size of 5 mm to 1 cm in a circular shape.

[0028] In the above description, with reference to the accompanying drawings, the present disclosure includes one or more aspects or embodiments, wherein similar reference numerals represent identical or similar components. It will be appreciated by those skilled in the art that this description is intended to cover all alternatives, modifications, and equivalent concepts that may be included within the scope of the present disclosure. In this description, many specific details, such as specific configurations, compositions, and procedures, are provided in order to provide a full understanding of the present disclosure. In other cases, in order not to confuse the present disclosure, the specific details of well-known processes and manufacturing techniques are not described. In addition, the various embodiments shown in the figures are merely illustrative representations and are not necessarily limited to what is shown.

[0029] The words "exemplary", "illustrative", or various forms thereof used herein are intended to be used as examples or diagrammatic illustrations. In addition, examples are provided only for the purpose of clarity and understanding, and are not intended to limit or restrict the scope of protection of the disclosed invention in any way.

[0030] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present invention shall be included in the scope of the claims of the present invention.

Claims

1. A device for metal surface modification based on PECVD plasma enhanced chemical vapor deposition technology, characterized in that: include: The box further comprises a gas cooling system, a rare gas input system, an exhaust gas exhaust system and a sample placement table; an isolation generating chamber is also arranged in the box, and the isolation generating chamber is respectively connected to the gas cooling system and the exhaust gas exhaust system; the sample placement table is arranged below the isolation generating chamber, wherein a metal sheet is placed on the sample placement table; a plasma discharge generator is also arranged in the isolation generating chamber, the rare gas input system is connected to the plasma discharge generator, the plasma discharge generator is used to generate jet plasma and spray it onto the surface of the metal sheet, and the isolation generating chamber is used to provide a sealed oxygen-free negative pressure environment for the metal sheet; The plasma discharge generator comprises: a plasma generator outer tube, a plasma generator high-voltage electrode, a plasma generator cathode, a plasma generator liquid tube, a generator backflow protection cover, and a plasma excitation gas inlet; the plasma generator high-voltage electrode and the plasma generator cathode are respectively arranged on the top and the bottom of the plasma generator outer tube, and the plasma generator high-voltage electrode and the plasma generator cathode form a dielectric barrier discharge structure; the plasma generator liquid tube is arranged inside the plasma generator high-voltage electrode.

2. The device according to claim 1, characterized in that The gas cooling system comprises: a nitrogen intake flow meter, a nitrogen intake flow regulating knob, a nitrogen solenoid valve switch and a gas cooler.

3. The device according to claim 1, characterized in that The exhaust gas discharge system includes: an exhaust gas flow meter, an exhaust gas flow adjustment knob, an exhaust gas discharge pump, and an exhaust gas solenoid valve switch.

4. The device according to claim 1, characterized in that The rare gas input system includes: a rare gas intake flow meter, a rare gas intake flow adjustment knob, and a rare gas solenoid valve switch.

5. The device according to claim 1, characterized in that The plasma excitation gas inlet is arranged at the top of the plasma generator outer tube, and the rare gas enters the plasma generator outer tube through the plasma excitation gas inlet; the lower part of the plasma generator outer tube is opposite to the sample placement table.

6. The device according to claim 5, characterized in that The plasma generator liquid pipe comprises an inlet, and the inlet of the plasma generator liquid pipe is arranged outside the isolated generating chamber.

7. The device according to claim 5, characterized in that The isolation generating chamber is provided with a through hole, and the sample placing platform is inserted into the interior of the isolation generating chamber through the through hole.

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