Edge ring replacement device, plasma processing equipment and use method

Abstract

The present invention discloses an edge ring replacement device, a plasma processing device and a method of using the edge ring replacement device, wherein the edge ring replacement device is located in a plasma etching chamber, a base is provided at the bottom of the plasma etching chamber, and the edge ring surrounds the outside of the base; the edge ring replacement device comprises: an upper grounding ring that can move up and down, located at the top of the plasma etching chamber; a plurality of electrode groups located in the upper grounding ring, each of the electrode groups being arranged opposite to the edge ring; and a circuit system for providing a DC voltage to each of the electrode groups so that each of the electrode groups generates an electrostatic suction force. The electrode group of the present invention can generate an electrostatic suction force to adsorb the edge ring and release the electrostatic suction force to place the adsorbed edge ring in a preset position, thereby removing or moving the edge ring in without opening a cavity for the plasma etching equipment and without setting a plurality of driving components in the chamber, thereby replacing the edge ring.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an edge ring replacement device, plasma processing equipment and a use method. Background Art

[0002] In plasma etching equipment, the substrate processing device mainly uses an electrostatic chuck to clamp the substrate; around the electrostatic chuck, there are usually components such as an edge ring surrounding the substrate to adjust the electric field or temperature distribution around the substrate, thereby improving the uniformity of the plasma distribution of the substrate. However, during the process of plasma etching the substrate, the edge ring surrounding the substrate will be directly or indirectly exposed to chemical etching and physical etching, resulting in rapid loss of the edge ring. In order to ensure the normal progress of the plasma etching process of the substrate, the worn edge ring must be replaced within a predetermined time period.

[0003] At present, the methods for replacing edge rings mainly include: first, manually replacing the edge ring when the chamber is at atmospheric pressure; second, replacing the edge ring by a lifting actuator around the electrostatic chuck. However, if the edge ring is replaced by the above method, the plasma etching equipment needs to be opened to break the vacuum environment, and a long vacuum pumping process is required before the process is carried out again, which will delay the production process. Alternatively, multiple driving components are set around the electrostatic chuck in the chamber, which will cause problems such as the stability of the lower RF feed and the complexity of RF regulation. Summary of the invention

[0004] The object of the present invention is to provide an edge ring replacement device, plasma processing equipment and use method, which can move the edge ring out and in without opening a cavity in the plasma etching equipment and without arranging multiple driving components in the chamber, thereby replacing the edge ring.

[0005] In order to achieve the above object, the present invention is implemented by the following technical solutions:

[0006] An edge ring replacement device is located in a plasma etching chamber, wherein a base is provided at the bottom of the plasma etching chamber, and the edge ring surrounds the outer side of the base; the edge ring replacement device comprises:

[0007] An upper grounding ring that can move up and down and is located at the top of the plasma etching chamber;

[0008] A plurality of electrode groups located in the upper grounding ring, each of the electrode groups being arranged opposite to the edge ring;

[0009] The circuit system is used to provide a direct current voltage to each electrode group so that each electrode group generates an electrostatic attraction.

[0010] Preferably, the circuit system comprises a switch for controlling the on and off of the DC voltage.

[0011] Preferably, a film transmission port is provided on the side wall of the plasma etching chamber, and the lower surface of the upper grounding ring moves between a high position and a low position, wherein the high position is above the film transmission port and the low position is below the film transmission port.

[0012] Preferably, the low position causes the lower surface of the upper grounding ring to contact the upper surface of the edge ring.

[0013] Preferably, the lower surface of the electrode group is close to the lower surface of the upper grounding ring.

[0014] Preferably, the electrode group includes a first electrode and a second electrode with opposite polarities, and the first electrode and the second electrode are arranged in a circumferential direction or a radial direction.

[0015] Preferably, the number of the electrode group is 1, and the first electrode and the second electrode are circular and concentrically arranged.

[0016] Preferably, the number of the electrode group is 1, the first electrode and the second electrode are semi-annular and are arranged along the circumference of the upper grounding ring.

[0017] Preferably, an insulating layer is provided on the surface of the electrode group, and the thickness of the insulating layer is 20 μm to 90 μm.

[0018] Preferably, the DC voltage is 100V to 10000V.

[0019] On the other hand, the present invention also provides a plasma processing device, comprising: a plasma etching chamber, an upper electrode located in the plasma etching chamber, a movable upper grounding ring arranged around the upper electrode, and the edge ring replacement device as described above.

[0020] The present invention also provides a method for using the edge ring replacement device as described above, comprising:

[0021] Turning on the circuit system, applying a DC voltage to the electrode group, and generating an electrostatic attraction;

[0022] Move the upper grounding ring downward to absorb the edge ring;

[0023] The upper grounding ring drives the edge ring to perform a placement operation.

[0024] Preferably, the placing operation includes:

[0025] The upper grounding ring drives the edge ring to move upward, and when the robotic arm moves to the bottom of the edge ring, the electrostatic attraction is released to place the edge ring above the robotic arm.

[0026] Preferably, the placing operation includes:

[0027] When the robot arm moves away from the bottom of the edge ring, the upper grounding ring drives the edge ring to continue to move downward and then releases the electrostatic attraction to place the edge ring outside the base.

[0028] Compared with the prior art, the present invention has at least one of the following advantages:

[0029] The present invention provides an edge ring replacement device, a plasma processing device and a method of using the same. A circuit system can provide a DC voltage to an electrode group located in an upper grounding ring that can move up and down, so that the electrode group can generate electrostatic suction to adsorb the edge ring, thereby completing the replacement of the edge ring.

[0030] The circuit system of the present invention can control the on and off of the DC voltage through a switch, so that the electrode group can generate electrostatic attraction to adsorb the edge ring and release the electrostatic attraction to place the adsorbed edge ring in a preset position, thereby removing or moving the edge ring, and then replacing the edge ring.

[0031] The first electrode and the second electrode with opposite polarities in the electrode group of the present invention can generate electrostatic attraction when the direct current voltage is turned on, thereby adsorbing the edge ring through the electrostatic attraction.

[0032] The first electrode and the second electrode with opposite polarities in the electrode group of the present invention can release the electrostatic attraction when the DC voltage is interrupted, or release the electrostatic attraction when the circuit system provides a voltage with opposite polarity to the original DC voltage.

[0033] The invention can move the edge ring out and in without opening a cavity of the plasma etching equipment, destroying the vacuum and arranging a plurality of driving components in the chamber.

[0034] The present invention can also replace the focusing ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a structural schematic diagram of an edge ring replacement device provided in Embodiment 1 of the present invention;

[0036] Figure 2 is a schematic diagram of a first electrode and a second electrode in an electrode group of an edge ring replacement device provided in Embodiment 1 of the present invention being arranged radially;

[0037] Figure 3 is a schematic diagram of a first electrode and a second electrode in an electrode group of an edge ring replacement device provided in Embodiment 1 of the present invention being arranged along a circumferential direction;

[0038] Figure 4is a schematic diagram of a first electrode and a second electrode in an electrode group of an edge ring replacement device provided in Embodiment 2 of the present invention;

[0039] Figure 5 It is a schematic diagram of a first electrode and a second electrode in an electrode group of an edge ring replacement device provided in Embodiment 3 of the present invention. DETAILED DESCRIPTION

[0040] The following is a further detailed description of an edge ring replacement device, plasma processing equipment and a method of use proposed by the present invention in combination with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the drawings are in a very simplified form and are not in precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0041] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0042] Embodiment 1:

[0043] Combined with Figures 1 to 3As shown, this embodiment provides an edge ring replacement device, which is located in a plasma etching chamber 100, wherein a base 110 is provided at the bottom of the plasma etching chamber 100, and the edge ring 130 surrounds the outer side of the base 110; the edge ring replacement device includes: an upper grounding ring 120 that can move up and down, and is located at the top of the plasma etching chamber 100; a plurality of electrode groups 210 located in the upper grounding ring 120, and each of the electrode groups 210 is arranged opposite to the edge ring 130; and a circuit system 220, which is used to provide a DC voltage to each of the electrode groups 210 so that each of the electrode groups 210 generates an electrostatic suction force.

[0044] Please continue to refer to Figure 1 The circuit system 220 includes a switch for controlling the on and off of the DC voltage.

[0045] It can be understood that in some other embodiments, the DC voltage is 100V to 10000V.

[0046] Specifically, in the present embodiment, the circuit system 220 is connected to each of the electrode groups 210; and when the switch is closed, the circuit system 220 is turned on, thereby being able to provide the DC voltage to each of the electrode groups 210, thereby causing the electrodes of each of the electrode groups 210 to gather charges of opposite polarities, thereby generating the electrostatic attraction to adsorb the edge ring 130; when the switch is disconnected, the circuit system 220 is interrupted and is unable to provide the DC voltage to each of the electrode groups 210, thereby allowing each of the electrode groups 210 to release the electrostatic attraction, thereby placing the adsorbed edge ring 130 at a preset position, but the present invention is not limited thereto.

[0047] In some embodiments, when it is necessary to release the electrostatic attraction and place the edge ring 130 at the preset position, the switch can also be closed, and the circuit system 220 provides a voltage with a polarity opposite to and equal to the original DC voltage to each electrode group 210, so that the charge on each electrode of each electrode group 210 flows in the opposite direction, achieving the purpose of rapid charge removal, and the electrostatic attraction can be released in turn, thereby placing the adsorbed edge ring 130 at the preset position, and at the same time, the residual charge in each electrode group 210 can be neutralized, but the present invention is not limited to this.

[0048] Specifically, in this embodiment, the magnitude of the DC voltage provided by the circuit system 220 directly affects the magnitude of the electrostatic attraction generated by each electrode group 210, and the magnitude of the electrostatic attraction determines whether the edge ring 130 can be continuously and stably adsorbed, so the magnitude of the DC voltage can be determined according to the edge ring 130 to be adsorbed. More specifically, if the weight of the edge ring 130 to be adsorbed is greater, the DC voltage provided by the circuit system 220 should be greater; if the insulation of the edge ring 130 to be adsorbed is stronger, the DC voltage provided by the circuit system 220 should also be greater, but the present invention is not limited thereto.

[0049] Please also refer to Figures 1 to 3 The lower surface of the electrode group 210 is close to the lower surface of the upper grounding ring 120, which can make the electrode group 210 closer to the edge ring 130 when the upper grounding ring 120 descends, and ensure that the electrode group 210 does not protrude from the surface of the upper grounding ring 120 to generate higher plasma corrosion.

[0050] It can be understood that in some other embodiments, the surface of the electrode group 210 is provided with an insulating layer, and the thickness of the insulating layer is 20μm to 90μm. Correspondingly, the distance between the lower surface of the electrode group 210 and the lower surface of the upper grounding ring 120 is also 20μm to 90μm, which is used to prevent plasma bombardment during the process and avoid the generation of contaminated particles. If the thickness of the insulating layer is less than 20μm, it is not enough to protect the electrode. If it is greater than 90μm, the electrostatic field generated by the electrode group 210 on the lower surface of the upper grounding ring 120 will be insufficient, which will significantly increase the DC voltage required to generate sufficient electrostatic attraction and cause excessive losses.

[0051] Specifically, in this embodiment, each of the electrode groups 210 can be embedded in the lower surface of the upper grounding ring 120, so that when the lower surface of the grounding ring 120 contacts the upper surface of the edge ring 130, each of the electrode groups 210 can be at a minimum distance from the upper surface of the edge ring 130, thereby generating a maximum electrostatic attraction on the edge ring 130, but the present invention is not limited to this.

[0052] Specifically, in this embodiment, the insulating layer may be provided on the contact surface between each electrode group 210 and the upper grounding ring 120, so that each electrode group 210 is completely insulated from the upper grounding ring 120, thereby preventing the DC voltage applied to the electrode group 210 from being applied to the entire chamber of the plasma etching chamber 100 through the dielectric ring (conductor), thereby preventing the risk of electric shock when a person touches the outer wall of the chamber. At the same time, the insulating layer is also provided on the end surface of each electrode group 210 close to the base 110, which can prevent the plasma in the plasma etching chamber 100 from corroding the electrode group 210 and keep the grounding function of the upper grounding ring 120 unaffected. In addition, the thickness of the insulating layer provided on the end surface of each electrode group 210 also affects the magnitude of the DC voltage, and the thicker the insulating layer provided on the end surface of the electrode group 210, the greater the DC voltage provided by the circuit system 220. Preferably, the material of the insulating layer may be ceramic or silicon dioxide, but the present invention is not limited thereto.

[0053] Please also refer to Figures 1 to 3 The electrode group 210 includes a first electrode 2101 and a second electrode 2102 with opposite polarities, and the first electrode 2101 and the second electrode 2102 are arranged in a circumferential direction or a radial direction.

[0054] Specifically, in this embodiment, when the number of the electrode groups 210 is greater than one, all the electrode groups 210 may be spaced apart along the circumference of the upper grounding ring 120, so that all the electrode groups 210 may be evenly distributed on the lower surface of the upper grounding ring 120, thereby being able to stably adsorb the edge ring 130. Figure 2 and Figure 3 As shown, when the number of the electrode groups 210 is 3, the 3 electrode groups 210 can be arranged at intervals of 120 degrees. More specifically, the first electrode 2101 and the second electrode 2102 in each electrode group 210 can be arranged along the radial direction of the upper grounding ring 120 (such as Figure 2 ), or may be arranged along the circumference of the upper grounding ring 120 (as shown in Figure 3 As shown), but the present invention is not limited thereto.

[0055] Please continue to refer to Figure 1 A film transmission port 101 is provided on the side wall 102 of the plasma etching chamber 100, and the lower surface of the upper grounding ring 120 moves between a high position and a low position, wherein the high position is above the film transmission port 101 and the low position is below the film transmission port 101.

[0056] It is understandable that in some other embodiments, the low position causes the lower surface of the upper grounding ring 120 to contact the upper surface of the edge ring 130 .

[0057] Specifically, the upper surface of the upper grounding ring 120 can be fixedly connected to the lifting actuator 230 that passes through the plasma etching chamber 100, and the lifting actuator 230 can drive the upper grounding ring 120 to move up and down, so that the lower surface of the upper grounding ring 120 can move between the high position and the low position, but the present invention is not limited to this.

[0058] Specifically, a robot arm is provided outside the plasma etching chamber 100, and the robot arm can enter and exit the plasma etching chamber 100 through the film transfer port 101 to move the edge ring 130 out of / into the plasma etching chamber 100, thereby completing the replacement of the edge ring 130, but the present invention is not limited to this.

[0059] In this embodiment, the upper grounding ring 120 moves downward so that the lower surface of the upper grounding ring 120 is in the low position, so that each of the electrode groups 210 embedded in the lower surface of the upper grounding ring 120 can be close to the upper surface of the edge ring 130 to be replaced, and then the electrode group 210 can adsorb the edge ring 130 to be replaced through the electrostatic suction force generated by it; then the upper grounding ring 120 drives the adsorbed edge ring 130 to be replaced to move upward, so that the lower surface of the upper grounding ring 120 and the adsorbed edge ring 130 to be replaced move to the height of the film transfer port 101, and after the robot arm moves to the bottom of the adsorbed edge ring 130 to be replaced, the electrode group 210 releases the electrostatic suction force and places the edge ring 130 to be replaced above the robot arm, so that the robot arm moves the edge ring 130 to be replaced out of the plasma etching chamber 100 through the film transfer port 101. In addition, the robotic arm can also move the new edge ring 130 into the plasma etching chamber 100 through the film transfer port 101; and the upper grounding ring 120 moves downward, so that the electrode group 210 can be close to the upper surface of the new edge ring 130, so that the electrode group 210 can adsorb the new edge ring 130 through the electrostatic suction force generated by it; after the robotic arm moves away from the bottom of the adsorbed new edge ring 130, the upper grounding ring 120 drives the adsorbed new edge ring 130 to continue to move downward, so that the lower surface of the upper grounding ring 120 and the adsorbed new edge ring 130 are in the low position, so that the electrode group 210 releases the electrostatic suction force and places the new edge ring 130 on the outside of the base 110, thereby completing the replacement of the edge ring 130.

[0060] Embodiment 2:

[0061] Please refer to Figure 4 , which is different from the first embodiment, the number of the electrode group 210 is 1, and the first electrode 2101 and the second electrode 2102 are circular and concentrically arranged.

[0062] In this embodiment, the inner diameter of the first electrode 2101 can be larger than the inner diameter of the upper grounding ring 120, and the inner diameter of the second electrode 2102 can be larger than the outer diameter of the first electrode 2101, and the outer diameter of the second electrode 2102 is smaller than the outer diameter of the upper grounding ring 120, that is, the first electrode 2101 is the inner ring, and the second electrode 2102 is the outer ring, but the present invention is not limited to this.

[0063] Embodiment three:

[0064] Please refer to Figure 5 , which is different from the first embodiment, is that the number of the electrode group 210 is one, the first electrode 2101 and the second electrode 2102 are semi-annular and are arranged along the circumference of the upper grounding ring 120 .

[0065] In this embodiment, the inner diameter of the first electrode 2101 may be equal to the inner diameter of the second electrode 2102 , and the outer diameter of the first electrode 2101 may be equal to the outer diameter of the second electrode 2102 , but the present invention is not limited thereto.

[0066] Embodiment 4:

[0067] This embodiment also provides a plasma processing device, comprising: a plasma etching chamber 100, an upper electrode located in the plasma etching chamber 100, a movable upper grounding ring 120 arranged around the upper electrode, and an edge ring replacement device as described above. The edge ring replacement device is located in the plasma etching chamber 100 and is used to replace the edge ring 130.

[0068] Embodiment five:

[0069] This embodiment also provides a method for using the edge ring replacement device as described above, comprising: step 1: turning on the circuit system 220, applying a DC voltage to the electrode group 210, and generating an electrostatic attraction; step 2: moving the upper grounding ring 120 downward to absorb the edge ring 130; step 3: causing the upper grounding ring 120 to drive the edge ring 130 to perform a placement operation. The order of step 1 of generating a DC voltage and step 2 of moving the upper grounding ring downward can be reversed, that is, first moving the upper grounding ring 120 downward to contact the edge ring 130 and then applying a DC voltage to generate an electrostatic attraction.

[0070] It is understandable that in some other embodiments, the placement operation includes: the upper grounding ring 120 drives the edge ring 130 to move upward, and when the robotic arm moves to the bottom of the edge ring 130, the electrostatic suction force is released to place the edge ring 130 above the robotic arm.

[0071] In some embodiments, the placement operation includes: when the robot arm moves away from the bottom of the edge ring 130 , the upper grounding ring 120 drives the edge ring 130 to continue to move downward and then releases the electrostatic attraction to place the edge ring 130 outside the base 110 .

[0072] Specifically, in this embodiment, step 1 includes: closing the switch to conduct the circuit system 220. In addition, since the robot is located outside the plasma etching chamber 100 and the robot can enter and exit the plasma etching chamber 100 through the film transfer port 101, the edge ring 130 can be moved out of / into the plasma etching chamber 100 by performing the placement operation in step 3, thereby completing the replacement of the edge ring 130, but the present invention is not limited thereto.

[0073] More specifically, when the edge ring 130 to be replaced is removed, step 2 includes: the upper grounding ring 120 moves downward so that the lower surface of the upper grounding ring 120 is in the low position; each of the electrode groups 210 embedded in the lower surface of the upper grounding ring 120 is close to the upper surface of the edge ring 130 to be replaced; and the electrode groups 210 adsorb the edge ring 130 to be replaced by the electrostatic suction force generated thereby. The step 3 includes: the upper grounding ring 120 drives the adsorbed edge ring 130 to be replaced to move upward, so that the lower surface of the upper grounding ring 120 and the adsorbed edge ring 130 to be replaced are moved to the height of the film transfer port 101; the robot arm is moved to the bottom of the adsorbed edge ring 130 to be replaced through the film transfer port 101; the switch is disconnected, and the electrode group 210 releases the electrostatic suction to place the edge ring 130 to be replaced above the robot arm; and the robot arm moves the edge ring 130 to be replaced out of the plasma etching chamber 100 through the film transfer port, but the present invention is not limited to this.

[0074] When the new edge ring 130 is moved in, before executing step 2, the process further includes: placing the new edge ring 130 on the robot arm; and moving the robot arm into the plasma etching chamber 100 through the film transfer port 101 and positioned below the upper grounding ring 120. Step 2 includes: the upper grounding ring 120 moves downward so that the electrode group 210 is close to the upper surface of the new edge ring 130; and the electrode group 210 absorbs the new edge ring 130 through the electrostatic attraction generated by the electrode group 210. The step 3 includes: moving the robot arm away from the bottom of the new edge ring 130 that has been adsorbed; the upper grounding ring 120 drives the new edge ring 130 that has been adsorbed to continue to move downward, so that the lower surface of the upper grounding ring 120 and the new edge ring 130 that has been adsorbed are in the low position; and disconnecting the switch, the electrode group 210 releases the electrostatic suction force to place the new edge ring 130 on the outside of the base 110, but the present invention is not limited to this.

[0075] In this embodiment, after the new edge ring 130 is moved in, the upper grounding ring 120 is still in the low position. At this time, the upper grounding ring 120 needs to be moved upward and reset to the high position so as not to affect the normal operation of the devices in the plasma etching chamber 100.

[0076] In some embodiments, the edge ring may be a focus ring, or an insert ring 140 located below the focus ring, or a cover ring located outside the focus ring, etc.

[0077] In summary, this embodiment provides an edge ring replacement device, a plasma processing device, and a method of use. Through the circuit system, a DC voltage can be provided to an electrode group located in an upper grounding ring that can move up and down, so that the electrode group can generate an electrostatic suction force to adsorb the edge ring, thereby completing the replacement of the edge ring. This embodiment can move the edge ring out and in without opening a cavity in the plasma etching device and without arranging multiple driving components in the chamber; in addition, this embodiment can also replace the focus ring.

[0078] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An edge ring replacement device, which is located in a plasma etching chamber, wherein a base is provided at the bottom of the plasma etching chamber, and the edge ring surrounds the outer side of the base; characterized in that: The edge ring replacement device comprises: An upper grounding ring that can move up and down and is located at the top of the plasma etching chamber; A plurality of electrode groups located in the upper grounding ring, each of the electrode groups being arranged opposite to the edge ring; The circuit system is used to provide a DC voltage to each electrode group so that each electrode group generates an electrostatic attraction; the upper grounding ring uses the electrostatic attraction to absorb and drive the edge ring to move up and down to replace the edge ring.

2. The edge ring replacement device according to claim 1, characterized in that: The circuit system includes a switch for controlling the on and off of the DC voltage.

3. The edge ring replacement device according to claim 1, characterized in that: A film transmission port is arranged on the side wall of the plasma etching chamber, and the lower surface of the upper grounding ring moves between a high position and a low position, wherein the high position is above the film transmission port and the low position is below the film transmission port.

4. The edge ring replacement device according to claim 3, characterized in that: The low position causes the lower surface of the upper ground ring to contact the upper surface of the edge ring.

5. The edge ring replacement device according to claim 2, characterized in that: The lower surface of the electrode group is close to the lower surface of the upper grounding ring.

6. The edge ring replacement device according to claim 2, characterized in that: The electrode group includes a first electrode and a second electrode with opposite polarities, and the first electrode and the second electrode are arranged in a circumferential direction or a radial direction.

7. The edge ring replacement device according to claim 6, characterized in that: The number of the electrode group is 1, and the first electrode and the second electrode are circular and concentrically arranged.

8. The edge ring replacement device according to claim 6, characterized in that: The number of the electrode group is one, the first electrode and the second electrode are semi-annular and are arranged along the circumference of the upper grounding ring.

9. The edge ring replacement device according to claim 5, characterized in that: An insulating layer is provided on the surface of the electrode group, and the thickness of the insulating layer is 20 μm to 90 μm.

10. The edge ring replacement device according to claim 1, characterized in that: The DC voltage is 100V to 10000V.

11. A plasma processing device, characterized in that: include: A plasma etching chamber, an upper electrode located in the plasma etching chamber, a movable upper grounding ring arranged around the upper electrode, and an edge ring replacement device as claimed in any one of claims 1 to 10.

12. A method for using the edge ring replacement device according to any one of claims 1 to 10, characterized in that: include: Turning on the circuit system, applying a DC voltage to the electrode group, and generating an electrostatic attraction; Move the upper grounding ring downward to absorb the edge ring; The upper grounding ring drives the edge ring to perform a placement operation.

13. The method for using the edge ring replacement device according to claim 12, characterized in that: The placement operation includes: The upper grounding ring drives the edge ring to move upward, and when the robotic arm moves to the bottom of the edge ring, the electrostatic attraction is released to place the edge ring above the robotic arm.

14. The method for using the edge ring replacement device according to claim 12, wherein: The placement operation includes: When the robot arm moves away from the bottom of the edge ring, the upper grounding ring drives the edge ring to continue to move downward and then releases the electrostatic attraction to place the edge ring outside the base.

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