Display panel, manufacturing method thereof and display device
By employing BG devices, BGB devices, BY devices, and microcavity structures in the display panel, combined with quantum dot materials, the problems of low brightness and low light utilization have been solved, achieving improved brightness and reduced power consumption.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2021-07-21
- Publication Date
- 2026-06-26
AI Technical Summary
Existing display panels combining quantum dot layers with OLEDs suffer from low brightness and low light utilization, leading to increased power consumption.
The blue OLED device is replaced by BG, BGB and BY devices, and combined with microcavity structure and quantum dot materials, the light utilization and brightness are improved by cavity length adjustment layer and wavelength conversion unit.
It improves the overall brightness and light utilization of the display panel, and reduces power consumption.
Smart Images
Figure CN115701233B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of display technology, specifically to a display panel and its manufacturing method, and a display device. Background Technology
[0002] The display architecture that combines quantum dot layers with OLED (Organic Light-Emitting Diode) can achieve a higher color gamut, higher resolution, and wider viewing angle, making it suitable for large-size self-emissive display technologies. Summary of the Invention
[0003] This disclosure presents a display panel, a method for manufacturing the same, and a display device.
[0004] In a first aspect, this disclosure provides a display panel, comprising:
[0005] A plurality of light-emitting devices are disposed on a substrate, each light-emitting device comprising, in a direction away from the substrate, a first electrode, a plurality of light-emitting units, and a second electrode arranged sequentially; wherein, the first electrode is a reflective electrode, the second electrode is a transmissive-reflective electrode, and a microcavity structure is formed between the first electrode and the second electrode; each light-emitting unit includes a light-emitting layer, and in the same light-emitting device, at least two of the light-emitting layers emit different colors; at least one light-emitting device further includes a cavity length adjustment layer, the cavity length adjustment layer being located between the first electrode and its adjacent light-emitting unit;
[0006] The color conversion layer includes multiple wavelength conversion units, each wavelength conversion unit corresponding to a light-emitting device having the cavity length adjustment layer. The wavelength conversion unit is disposed on the light-emitting side of the light-emitting device and is used to convert light that is irradiated to the wavelength conversion unit and is within its light absorption band into light of the target color and emit it.
[0007] Wherein, at least one emission peak in the emission band of the light-emitting device is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the light-emitting device.
[0008] In some embodiments, the overlap between the light absorption band of the wavelength conversion unit and the light emission band of the light-emitting device accounts for 50% to 100% of the light emission band.
[0009] In some embodiments, the multiple wavelength conversion units of the color conversion layer are divided into various types, with different target colors corresponding to different types of wavelength conversion units, and different light emission bands corresponding to different types of light emission devices.
[0010] In some embodiments, the multiple wavelength conversion units include a red wavelength conversion unit and a green wavelength conversion unit, wherein the target color corresponding to the red wavelength conversion unit is red, and the target color corresponding to the green wavelength conversion unit is green.
[0011] The light-emitting band of the light-emitting device corresponding to the red wavelength conversion unit includes [380nm, 480nm]; the light-emitting band of the light-emitting device corresponding to the green wavelength conversion unit includes [380nm, 580nm].
[0012] The color conversion layer also includes multiple scattering units, each scattering unit corresponding to a light-emitting device, and the light-emitting band of the light-emitting device corresponding to the scattering unit includes [380nm, 480nm].
[0013] In some embodiments, the thickness of the cavity length adjustment layer varies for different types of wavelength conversion units.
[0014] In some embodiments, the plurality of light-emitting layers in each light-emitting device includes: two blue light-emitting layers and a green light-emitting layer located between the two blue light-emitting layers;
[0015] The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the red wavelength conversion unit is in the range of [100nm, 120nm], so that the light emission band of the light-emitting device corresponding to the red wavelength conversion unit includes [380nm, 480nm].
[0016] The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the green wavelength conversion unit is in the range of [70nm, 90nm], so that the light emission band of the light-emitting device corresponding to the green wavelength conversion unit includes [380nm, 580nm].
[0017] In some embodiments, the plurality of light-emitting layers in each light-emitting device includes: a blue light-emitting layer and a yellow light-emitting layer;
[0018] The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the red wavelength conversion unit is in the range of [150nm, 170nm], so that the light emission band of the light-emitting device corresponding to the red wavelength conversion unit includes: [380nm, 480nm] and [580nm, 680nm].
[0019] The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the green wavelength conversion unit is in the range of [130nm, 150nm) so that the light emission band of the light-emitting device corresponding to the green wavelength conversion unit includes [380nm, 580nm].
[0020] In some embodiments, the wavelength conversion unit is made of quantum dot material.
[0021] In some embodiments, the first electrode includes a first transparent conductive layer and a metal reflective layer, wherein the metal reflective layer is located on the side of the first transparent conductive layer away from the substrate.
[0022] In some embodiments, the cavity length adjustment layer is made of a transparent conductive material;
[0023] Alternatively, the cavity length adjustment layer may be made of a transparent insulating material, and a second transparent conductive layer may be provided on the side of the cavity length adjustment layer away from the substrate. The orthographic projection of the second transparent conductive layer on the substrate may exceed the orthographic projection of the cavity length adjustment layer on the substrate, and the portion of the second transparent conductive layer that exceeds the cavity length adjustment layer may be electrically connected to the first electrode.
[0024] In some embodiments, the display panel further includes a color filter layer disposed on the side of the color conversion layer away from the substrate. The color filter layer includes a plurality of color filters, each of the scattering units and each of the wavelength conversion units corresponds to one of the color filters, and the color of the color filter is the same as the emitted color of its corresponding scattering unit or wavelength conversion unit.
[0025] In some embodiments, each light-emitting device includes N light-emitting units arranged sequentially along a direction away from the substrate, wherein the light-emitting layer of the i-th light-emitting unit of the plurality of light-emitting devices is an integral structure; N and i are both integers, N>1, 0<i<N.
[0026] In some embodiments, a charge generation layer is provided between every two adjacent light-emitting units in the same light-emitting device.
[0027] In some embodiments, the display panel further includes: a first encapsulation layer and a second encapsulation layer; wherein,
[0028] The first encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate, and is used to encapsulate the plurality of light-emitting devices;
[0029] The color conversion layer is disposed on the side of the first encapsulation layer away from the substrate;
[0030] The second encapsulation layer is disposed on the side of the color conversion layer away from the substrate, and is used to encapsulate the color conversion layer.
[0031] In some embodiments, the display panel further includes: a cover plate, a first encapsulation layer, a second encapsulation layer, and a fill layer, wherein,
[0032] The first encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate, and is used to encapsulate the plurality of light-emitting devices;
[0033] The cover plate is disposed opposite to the base;
[0034] The color conversion layer is disposed on the side of the cover plate facing the substrate, and the second encapsulation layer is disposed on the side of the color conversion layer away from the cover plate, for encapsulating the color conversion layer;
[0035] The filler layer is disposed between the first encapsulation layer and the second encapsulation layer.
[0036] Secondly, embodiments of this disclosure also provide a method for manufacturing a display panel, comprising:
[0037] Multiple light-emitting devices are formed on a substrate. Each light-emitting device includes, in a direction away from the substrate, a first electrode, multiple light-emitting units, and a second electrode arranged sequentially. The first electrode is a reflective electrode, and the second electrode is a transmissive-reflective electrode. A microcavity structure is formed between the first electrode and the second electrode. Each light-emitting unit includes a light-emitting layer. In the same light-emitting device, at least two of the light-emitting layers emit different colors. At least one light-emitting device also includes a cavity length adjustment layer located between the first electrode and its adjacent light-emitting unit.
[0038] A color conversion layer is formed, the color conversion layer includes multiple wavelength conversion units, each wavelength conversion unit corresponds to a light-emitting device having the cavity length adjustment layer, the wavelength conversion unit is disposed on the light-emitting side of the light-emitting device, and is used to convert light that is irradiated to the wavelength conversion unit and is within its light absorption band into light of the target color and emit it;
[0039] Wherein, at least one emission peak in the emission band of the light-emitting device is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the light-emitting device.
[0040] Thirdly, embodiments of this disclosure also provide a display device, including the display panel described above. Attached Figure Description
[0041] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:
[0042] Figure 1 This is a schematic diagram of a display panel provided in some embodiments of the present disclosure.
[0043] Figure 2 This is a schematic diagram of a light-emitting device provided in some embodiments of this disclosure.
[0044] Figure 3This is a schematic diagram of a light-emitting device provided in some other embodiments of the present disclosure.
[0045] Figure 4 This is a schematic diagram of the first electrode and driving structure layer provided in some embodiments of this disclosure.
[0046] Figure 5 This is a peak diagram of a light-emitting device consisting of two blue light-emitting layers and one green light-emitting layer.
[0047] Figure 6 The graph shows the relationship between the overall brightness of the light-emitting device and the thickness of the cavity length adjustment layer when the light-emitting device consists of two blue light-emitting layers and one green light-emitting layer.
[0048] Figure 7 The graphs show the absorption and emission spectra of the red wavelength conversion unit.
[0049] Figure 8 The absorption and emission spectra of the green wavelength conversion unit are shown.
[0050] Figure 9 This is a peak diagram of a light-emitting device consisting of a blue light-emitting layer and a yellow light-emitting layer.
[0051] Figure 10 The graph shows the relationship between the overall brightness of the light-emitting device and the thickness of the cavity length adjustment layer when the light-emitting device includes a blue light-emitting layer and a yellow light-emitting layer.
[0052] Figure 11 This is a schematic diagram of a display panel provided in some other embodiments of this disclosure.
[0053] Figure 12 This is a flowchart illustrating a method for manufacturing a display panel as provided in some embodiments of this disclosure.
[0054] Figures 13A to 13H This is a schematic diagram of step S10 in the method for manufacturing a display panel provided in some embodiments of this disclosure. Detailed Implementation
[0055] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0056] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.
[0057] The terminology used herein to describe embodiments of this disclosure is not intended to limit and / or restrict the scope of this disclosure. For example, unless otherwise defined, the technical or scientific terms used herein should be understood in their ordinary sense as would be understood by one of ordinary skill in the art to which this invention pertains. It should be understood that the terms “first,” “second,” and similar terms used herein do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Unless the context clearly indicates otherwise, the singular forms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. Terms such as “comprising” or “including” mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described object changes.
[0058] In the following description, when an element or layer is referred to as "on" or "connected to" another element or layer, the element or layer may be directly on or directly connected to the other element or layer, or there may be intermediate elements or intermediate layers. However, when an element or layer is referred to as "directly on" or "directly connected to" another element or layer, there are no intermediate elements or intermediate layers. The term "and / or" includes any and all combinations of one or more of the related listed items.
[0059] Display architectures combining quantum dot layers with OLED devices can achieve higher color gamut, higher resolution, and wider viewing angles. In some examples, the display panel includes a quantum dot layer and multiple blue OLED devices. The quantum dot layer includes red quantum dot units, green quantum dot units, and scattering units. Each red quantum dot unit, each green quantum dot unit, and each scattering unit corresponds to a blue OLED device. Red quantum dot units emit red light when excited by blue light, green quantum dot units emit green light when excited by blue light, and the scattering units scatter the blue light. However, due to the low light conversion efficiency of quantum dot units, the overall brightness of the display panel is not high. To improve the overall brightness of the display panel, in other examples, BG devices, BGB devices, and BY devices are used instead of blue OLED devices. A BG device refers to an OLED device whose light-emitting layer includes both a blue and a green light-emitting layer; a BGB device refers to an OLED device whose light-emitting layer includes two blue light-emitting layers and a green light-emitting layer between them; and a BY device refers to an OLED device whose light-emitting layer includes both a blue and a yellow light-emitting layer. However, this arrangement reduces the light utilization rate of the light-emitting devices, leading to increased power consumption.
[0060] Figure 1 This is a schematic diagram of a display panel provided in some embodiments of this disclosure, such as... Figure 1 As shown, the display panel includes: a substrate 10, a plurality of light-emitting devices 23 disposed on the substrate 10, and a color conversion layer.
[0061] The substrate 10 can be a glass substrate or a flexible substrate made of flexible materials such as polyimide (PI), which is beneficial for realizing flexible displays.
[0062] The light-emitting device 23 is disposed on the substrate 10. Figure 2 This is a schematic diagram of a light-emitting device provided in some embodiments of this disclosure. Figure 3The schematic diagram provided in some other embodiments of the present disclosure shows a light-emitting device 23, each of which includes, in a direction away from the substrate 10, a first electrode 231, a plurality of light-emitting units 234, and a second electrode 232 arranged sequentially. The first electrode 231 can serve as the anode of the light-emitting device 23, and the second electrode 232 can serve as the cathode. Each light-emitting unit 234 includes, in a direction away from the substrate 10, a hole injection layer 2341, a hole transport layer 2342, a light-emitting layer 2343, an electron injection layer 2344, and an electron transport layer 2345 arranged sequentially. Optionally, the light-emitting device 23 is an OLED device, in which case the light-emitting layer 2343 uses an organic light-emitting material; or, the light-emitting device 23 is a QLED (Quantum Dot Light Emitting Diode) device, in which case the light-emitting layer 2343 uses a quantum dot light-emitting material. In the same light-emitting device 23, at least two light-emitting layers 2343 emit different colors. It should be noted that the phrase "sequentially arranged" in the direction away from the substrate 10 refers to the fact that the multiple light-emitting units 234 are located on the side of the first electrode 231 away from the substrate 10 and the multiple light-emitting units 234 are stacked in sequence, and the second electrode 232 is located on the side of the multiple light-emitting units 234 away from the substrate 10. It does not mean that the first electrode 231 and the light-emitting units 234 are necessarily in contact.
[0063] For example, at least one of the plurality of light-emitting devices 23 may further include: a cavity length adjustment layer 233, the cavity length adjustment layer 233 being located between the first electrode 231 and the light-emitting unit 234 closest to the first electrode 231.
[0064] The first electrode 231 is a reflective electrode, configured to reflect light incident on it. The second electrode 232 is a transmissive-reflective electrode, configured to partially transmit and partially reflect light incident on it. A microcavity structure is formed between the first electrode 231 and the second electrode 232. The cavity length of the microcavity structure is related to the thickness of the cavity length adjustment layer 233. When the thickness of the cavity length adjustment layer 233 is large, the cavity length of the microcavity structure is long; when the thickness is small, the cavity length of the microcavity structure is short. The light emitted by the light-emitting layers 2343 of the multiple light-emitting units 234 oscillates multiple times within the microcavity structure, so that the light-emitting device 23 as a whole emits light in a wavelength band corresponding to the cavity length of the microcavity structure.
[0065] The microcavity effect is an optical resonant cavity with a size on the order of micrometers or submicrometers. It uses the effects of reflection, total internal reflection, scattering or diffraction of light at the interface of discontinuous refractive index to confine light within the microcavity of the light-emitting device 23. Only light of a specific wavelength can be emitted. Therefore, the microcavity effect has the function of enhancing light of a certain wavelength while suppressing the emission of light of other wavelengths, thereby enhancing and narrowing the light of a specific wavelength.
[0066] The color conversion layer includes multiple wavelength conversion units 24, each corresponding to a light-emitting device 23, and the light-emitting device 23 corresponding to the wavelength conversion unit 24 includes the aforementioned cavity length adjustment layer 233. The wavelength conversion unit 24 is disposed on the light-emitting side of the light-emitting device 23, which is the side of the second electrode 232 away from the first electrode 231. The wavelength conversion unit 24 is used to convert light irradiated to it and within its light absorption band into light of the target color and emit it. The wavelength of the target color light emitted by the wavelength conversion unit 24 is greater than the light absorption band of the light conversion unit 24; that is, the wavelength conversion unit 24 converts low-wavelength light into high-wavelength light. It should be noted that the multiple wavelength conversion units 24 of the color conversion layer can be of various types, and the target colors of different types of wavelength conversion units 24 can be different. That is, when different types of wavelength conversion units 24 receive light located within their respective light absorption bands, the colors of the emitted light are different.
[0067] In this process, at least one emission peak in the emission band of the light-emitting device 23 is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit 24, and the light absorption band of the wavelength conversion unit 24 overlaps with the emission band of the light-emitting device 23.
[0068] The light absorption band of wavelength conversion unit 24 refers to the wavelength range of light that can excite wavelength conversion unit 24 to emit light. The intrinsic emission peak of wavelength conversion unit 24 refers to the wavelength of the light emitted by wavelength conversion unit 24 when it is excited, where the light intensity is the highest. For example, if the wavelength conversion unit emits light in the red band (i.e., 580nm to 680nm) after being excited, and the light intensity is the highest at a wavelength of 630nm, then the intrinsic emission peak of the wavelength conversion unit is 630nm.
[0069] It should be noted that the emission peak value in the emission band of the light-emitting device 23 refers to the wavelength corresponding to the peak position of the spectral curve of the light-emitting device 23. The spectral curve of the light-emitting device 23 may have two peaks, i.e., two emission peak values. At least one emission peak value is less than or equal to the intrinsic emission peak of the wavelength conversion unit 24.
[0070] In some embodiments, the material of the wavelength conversion unit includes quantum dot materials. Quantum dot materials are extremely small semiconductor nanocrystals, known as a new generation of fluorescent nanomaterials. They have excellent properties such as adjustable emission color with size, high light conversion efficiency, and narrow half-peak width of the emission spectrum. Quantum dot materials can be excited by low-wavelength light, thereby emitting high-wavelength light.
[0071] In some embodiments, a color filter layer may be provided on the side of the color conversion layer away from the substrate 10. The color filter layer includes a plurality of color filters 26r, 26b and 26g. Each wavelength conversion unit 24 corresponds to a color filter, and the color of the color filter is the same as the emitted color of the wavelength conversion unit 24.
[0072] In this embodiment, the light-emitting device 23 includes multiple light-emitting layers 2343, and at least two light-emitting layers 2343 emit different colors. Furthermore, the light-emitting device 23 includes a cavity length adjustment layer 233. By adjusting the thickness of the cavity length adjustment layer 233, the cavity length of the microcavity structure can be adjusted, thereby ensuring that at least one emission peak of the light-emitting device 23 is less than or equal to the intrinsic emission peak of the wavelength conversion unit 24. The light absorption band of the wavelength conversion unit 24 overlaps with the emission band of the light-emitting device 23, ensuring that the wavelength conversion unit 24 can be excited by the emitted light from the light-emitting device 23 and improving the utilization rate of the emitted light from the light-emitting device 23. Light not absorbed by the wavelength conversion unit 24 can directly pass through the color filter corresponding to the wavelength conversion unit 24, thereby increasing the luminous brightness of the region where the wavelength conversion unit 24 is located.
[0073] In some embodiments, the overlap between the light absorption band of the wavelength conversion unit 24 and the light emission band of the light-emitting device 23 accounts for 50% to 100% of the light emission band. Preferably, the overlap between the light absorption band of the wavelength conversion unit 24 and the light emission band of the light-emitting device 23 accounts for 80%, 90%, 95%, or 100% of the light emission band, thereby maximizing the utilization rate of the light emitted by the light-emitting device 23.
[0074] The display panel in the embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.
[0075] like Figure 1 As shown, a driving structure layer 20 is provided on the substrate 10. The driving structure layer 20 includes multiple pixel driving circuits. Each pixel driving circuit corresponds to a light-emitting device 23. The pixel driving circuit is used to provide driving current to the light-emitting device 23 so as to drive the light-emitting device 23 to emit light. Figure 4This is a schematic diagram of the first electrode and driving structure layer provided in some embodiments of this disclosure. For example, the pixel driving circuit includes multiple thin-film transistors 21. Each thin-film transistor 21 includes a gate 211, an active layer 212, a source 213, and a drain 214. Taking a top-gate thin-film transistor as an example, the active layer 212 is located between the gate 211 and the substrate 10. The material of the active layer 212 may include, for example, inorganic semiconductor materials (e.g., polycrystalline silicon, amorphous silicon, etc.), organic semiconductor materials, and oxide semiconductor materials. The active layer 212 includes a channel portion and source connection portions and drain connection portions located on both sides of the channel portion. The source connection portions are connected to the source 213 of the thin-film transistor 21, and the drain connection portions are connected to the drain 214 of the thin-film transistor 21. Both the source connection portions and the drain connection portions may be doped with impurities (e.g., N-type impurities or P-type impurities) with a higher impurity concentration than the channel portion. The channel is directly opposite the gate 211 of the thin film transistor 21. When the voltage signal applied to the gate 211 reaches a certain value, a carrier path is formed in the channel, which turns on the source 213 and drain 214 of the thin film transistor 21.
[0076] like Figure 4 As shown, a buffer layer BFL is disposed between the thin-film transistor 21 and the substrate 10 to prevent or reduce the diffusion of metal atoms and / or impurities from the substrate 10 into the active layer 212 of the thin-film transistor 21. The buffer layer BFL may comprise inorganic materials such as silicon oxide, silicon nitride, and / or silicon oxynitride, and may be formed as a multilayer or a single layer.
[0077] like Figure 4 As shown, the gate insulating layer GI is disposed on the side of the active layer 212 away from the buffer layer BFL. The material of the gate insulating layer GI may include silicon compounds and metal oxides. For example, the material of the gate insulating layer GI includes silicon oxynitride, silicon oxide, silicon nitride, silicon oxycarbide, silicon carbide nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, titanium oxide, etc. In addition, the gate insulating layer GI can be a single layer or multiple layers.
[0078] like Figure 4 As shown, the gate 211 of the thin-film transistor 21 is disposed on the side of the gate insulating layer GI away from the buffer layer BFL. The material of the gate 211 can include, for example, metals, metal alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc. For example, the gate 211 can include gold, gold alloys, silver, silver alloys, aluminum, aluminum alloys, aluminum nitride, tungsten, tungsten nitride, copper, copper alloys, nickel, chromium, chromium nitride, molybdenum, molybdenum alloys, titanium, titanium nitride, platinum, tantalum, tantalum nitride, neodymium, scandium, strontium ruthenium oxide, zinc oxide, tin oxide, indium oxide, gallium oxide, indium tin oxide, indium zinc oxide, etc. The gate 211 can have a single layer or multiple layers.
[0079] like Figure 4As shown, the interlayer insulating layer (ILD) is disposed on the side of the gate 211 away from the buffer layer (BFL). The material of the interlayer insulating layer (ILD) can include, for example, silicon compounds and metal oxides. Specifically, silicon compounds and metal oxides listed above can be selected, which will not be elaborated here.
[0080] The source-drain conductive layer is disposed on the side of the interlayer insulating layer (ILD) away from the buffer layer (BFL). The source-drain conductive layer may include the source 213 and drain 214 of each transistor, with the source 213 electrically connected to the source junction and the drain 214 electrically connected to the drain junction. The source-drain conductive layer may include metals, alloys, metal nitrides, conductive metal oxides, transparent conductive materials, etc. For example, the source-drain conductive layer may be a single layer or multiple layers made of metal, such as Mo / Al / Mo or Ti / Al / Ti.
[0081] like Figure 4 As shown, the planarization layer PLN is disposed on the side of the source / drain conductive layer away from the buffer layer BFL. The planarization layer PLN can be made of an organic insulating material, such as polyimide, epoxy resin, acrylic, polyester, photoresist, polyacrylate, polyamide, siloxane, and other resin-based materials. The first electrode 231 is disposed on the planarization layer PLN.
[0082] like Figure 1 and Figure 4 As shown, the pixel defining layer (PDL) is located on the side of the planarization layer (PLN) away from the buffer layer (BFL), and the PDL has multiple pixel openings. Each light-emitting device (LED) 23 corresponds to one of the pixel openings. The LED 23 includes: a first electrode 231, a cavity length adjustment layer 233, multiple light-emitting units 234, and a second electrode 232. The cavity length adjustment layer 233 is located on the side of the first electrode 231 away from the substrate 10, and the multiple light-emitting units 234 are located between the cavity length adjustment layer 233 and the second electrode 232.
[0083] Optionally, the first electrode 231 includes a first transparent conductive layer 231a and a metal reflective layer 231b stacked together, to provide reflection while reducing the resistance of the first electrode 231. The metal reflective layer 231b is located on the side of the first transparent conductive layer 231a away from the substrate 10. The first transparent conductive layer 231a can be made of a transparent conductive material such as indium tin oxide (ITO), and the thickness of the first transparent conductive layer 231a is within [specific range missing]. Between, for example The metallic reflective layer 231b can be made of materials with good conductivity, such as silver or aluminum, and its thickness is within... between.
[0084] In one example, the cavity length adjustment layer 233 is made of a transparent conductive material, such as ITO. The cavity length adjustment layer 233 is in contact with the first electrode 231. In another example, the cavity length adjustment layer 233 is made of a transparent insulating material, such as silicon nitride, silicon oxide, or silicon oxynitride. A second transparent conductive layer (not shown) is also disposed on the side of the cavity length adjustment layer 233 away from the substrate 10, and the second transparent conductive layer is electrically connected to the first electrode 231. The second transparent conductive layer can be made of a transparent conductive material such as ITO, and the thickness of the second transparent conductive layer is... Between, for example
[0085] Optionally, the material of the second electrode 232 includes magnesium and silver, with a volume ratio of magnesium to silver between 2:8 and 8:2, and the thickness of the second electrode 232 is between 120 nm and 180 nm; or, the second electrode 232 is made of indium zinc oxide (IZO), with a thickness between 80 nm and 500 nm.
[0086] Each light-emitting unit 234 includes, in a direction away from the substrate 10, the following layers arranged sequentially: a hole injection layer 2341, a hole transport layer 2342, a light-emitting layer 2343, an electron transport layer 2344, and an electron injection layer 2345. Within the same light-emitting device 23, a charge generation layer 235 is disposed between adjacent light-emitting units 234.
[0087] Optionally, assume that the number of light-emitting units 234 in each light-emitting device 23 is N, where N is an integer greater than 1, and the light-emitting layer 2343 of the i-th light-emitting unit 234 of the multiple light-emitting devices 23 is an integral structure; i is an integer, N>1, 0<i<N. Here, the i-th light-emitting unit 234 refers to the i-th light-emitting unit 234 arranged in the direction away from the substrate 10. Furthermore, the hole injection layer 2341 of the i-th light-emitting unit 234 of the multiple light-emitting devices 23 can be an integral structure, the hole transport layer 2342 of the i-th light-emitting unit 234 of the multiple light-emitting devices 23 can be an integral structure, the electron transport layer 2344 of the i-th light-emitting unit 234 of the multiple light-emitting devices 23 can be an integral structure, the electron injection layer 2345 of the i-th light-emitting unit 234 of the multiple light-emitting devices 23 can be an integral structure, and the second electrode 232 of the multiple light-emitting devices 23 can be an integral structure.
[0088] In some embodiments, the plurality of light-emitting units 234 in each light-emitting device 23 includes: two blue light-emitting units and a yellow light-emitting unit located between them, that is, the plurality of light-emitting layers in each light-emitting device 23 includes: two blue light-emitting layers and a yellow light-emitting layer located between them; or, the plurality of light-emitting units 234 in each light-emitting device 23 includes: two blue light-emitting units and a green light-emitting unit located between them, that is, the plurality of light-emitting layers 2343 in each light-emitting unit 234 includes: two blue light-emitting layers and a green light-emitting layer located between them; or, the plurality of light-emitting units 234 in each light-emitting device 23 includes: a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit, that is, the plurality of light-emitting layers in each light-emitting device 23 includes: a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer.
[0089] like Figure 1 As shown, a first encapsulation layer 25 is disposed on the side of the plurality of light-emitting devices 23 away from the substrate 10, for encapsulating the plurality of light-emitting devices 23 to prevent moisture and / or oxygen in the external environment from corroding the light-emitting devices 23. In some embodiments, the first encapsulation layer 25 includes a first inorganic encapsulation layer 25a, a second inorganic encapsulation layer 25b, and an organic encapsulation layer 25c. The second inorganic encapsulation layer 25b is located on the side of the first inorganic encapsulation layer 25a away from the substrate 10, and the organic encapsulation layer 25c is located between the first inorganic encapsulation layer 25a and the second inorganic encapsulation layer 25b. Both the first inorganic encapsulation layer 25a and the second inorganic encapsulation layer 25b can be made of highly dense inorganic materials such as silicon oxynitride (SiON), silicon oxide (SiOx), and silicon nitride (SiNx). The organic encapsulation layer 25c can be made of a polymer material containing a desiccant or a polymer material that can block moisture. For example, a polymer resin can be used to relieve the stress of the first inorganic encapsulation layer 25a and the second inorganic encapsulation layer 25b, and a water-absorbing material such as a desiccant can be included to absorb water, oxygen and other substances that have penetrated into the interior.
[0090] Optionally, a light extraction layer and a protective layer (not shown) may be provided between each light-emitting device 23 and the first encapsulation layer 25. The light extraction layer may be made of a material with a high refractive index to facilitate the extraction of light emitted by the light-emitting device 23. The protective layer is disposed between the light extraction layer and the encapsulation layer to prevent the manufacturing process of the encapsulation layer from affecting the light-emitting device 23. The material of the protective layer may include lithium fluoride (LiF).
[0091] The color conversion layer and the housing structure layer 27 are disposed on the side of the first encapsulation layer 25 away from the substrate 10, such as... Figure 1As shown, the color conversion layer includes multiple wavelength conversion units 24 and multiple scattering units 241. For example, the multiple wavelength conversion units 24 are of various types, each corresponding to a different target color. For instance, the multiple wavelength conversion units 24 include a red wavelength conversion unit 24r and a green wavelength conversion unit 24g, where the light emitted by the red wavelength conversion unit 24r is red, and the light emitted by the green wavelength conversion unit 24g is green. For example, the multiple wavelength conversion units 24 and multiple scattering units 241 in the color conversion layer form multiple repeating groups, each repeating group including: one red wavelength conversion unit 24r, one green wavelength conversion unit 24g, and one scattering unit 241. Each red wavelength conversion unit 24r, each green wavelength conversion unit 24g, and each scattering unit 241 corresponds to a light-emitting device 23. Each light-emitting device 23 corresponds to one wavelength conversion unit or one scattering unit 241. The material of the red wavelength conversion unit 24r may include red quantum dot material, the material of the green wavelength conversion unit 24g may include green quantum dot material, and the material of the scattering unit 241 includes scattering particles. The quantum dot material can be one or more of ZnCdSe2, CdSe, CdTe, InP, and InAs; the quantum dots are not limited to the above materials and can be selected from group II-VI compounds, group III-V compounds, group IV-VI compounds, group IV elements, group IV compounds and / or combinations thereof.
[0092] The accommodating structure layer 27 has multiple accommodating slots, each accommodating slot being used to accommodate a wavelength conversion unit 24 or a scattering unit 241.
[0093] The second encapsulation layer 28 is disposed on the side of the color conversion layer away from the substrate 10, and is used to encapsulate the color conversion layer.
[0094] The color filter layer and the black matrix BM are disposed on the side of the color conversion layer away from the substrate 10. The color filter layer includes multiple color filters 26r, 26b, and 26g. Each scattering unit 241 and each wavelength conversion unit 24 corresponds to a color filter 26r / 26b / 26g, and the color of the color filter is the same as the color of its corresponding scattering unit 241 or wavelength conversion unit 24. For example, color filter 26r corresponds to the red wavelength conversion unit, color filter 26g corresponds to the green wavelength conversion unit, and scattering unit 241 corresponds to color filter 26b. Any two adjacent color filters are separated by the black matrix BM.
[0095] In some embodiments, the light-emitting devices 23 corresponding to different wavelength conversion units 24 have different emission bands. For example, the light-emitting device 23 corresponding to the red wavelength conversion unit 24r has an emission band of [380nm, 480nm], and the light-emitting device 23 corresponding to the green wavelength conversion unit 24g has an emission band of [380nm, 580nm]. Each scattering unit 241 corresponds to one light-emitting device 23, and the light-emitting device 23 corresponding to the scattering unit 241 has an emission band of [380nm, 480nm].
[0096] In some embodiments, the thickness of the cavity length adjustment layer 233 corresponding to different types of wavelength conversion units 24 can be different, thereby resulting in different emission bands of the light-emitting devices 23 corresponding to different types of wavelength conversion units 24. For the scattering unit 241, its corresponding light-emitting device 23 may or may not include the cavity length adjustment layer 233. When the light-emitting device 23 corresponding to the scattering unit 241 includes the cavity length adjustment layer 233, the thickness of the cavity length adjustment layer 233 can be adjusted so that the emission band of the light-emitting device 23 corresponding to the scattering unit 241 includes [380nm, 480nm], for example, causing the light-emitting device 23 corresponding to the scattering unit 241 to emit blue light; when the light-emitting device 23 corresponding to the scattering unit 241 does not include the cavity length adjustment layer 233, the emitted light of the light-emitting device 23 includes not only blue light in the [380nm, 480nm] band, but also light in other bands. In this case, the color filter 26b corresponding to the scattering unit 241 can filter out light in other bands. Furthermore, when the light-emitting device 23 does not include the cavity length adjustment layer 233, the manufacturing process of the light-emitting device 23 can be simplified.
[0097] In some embodiments, the plurality of light-emitting layers in the light-emitting device 23 include: two blue light-emitting layers and a green light-emitting layer located between the two blue light-emitting layers. Figure 5This is a peak plot of the light-emitting device (LED) comprising two blue emitting layers and one green emitting layer. The horizontal axis represents wavelength, and the vertical axis represents normalized light intensity. Each curve corresponds to a cavity length adjustment layer 233 of a certain thickness. Each curve represents the intensity of the emitted light from the LED 23 as a function of wavelength when the cavity length adjustment layer 233 reaches a corresponding thickness. Specifically, when the thickness of the cavity length adjustment layer 233 is in the range of [50nm, 60nm], the emission band of the LED 23 is [440nm, 580nm], and the emission peak is in the range of [460nm, 530nm]. When the thickness of the cavity length adjustment layer 233 is 70nm, the emission band of the LED 23 is [440nm, 580nm], and the corresponding spectral curve of the LED 23 shows two peaks, meaning the LED 23 has two emission peaks, one in the range of [450nm, 460nm] and the other in the range of [535nm, 545nm]. When the cavity length adjustment layer 233 has a thickness of 80 nm, the emission band of the light-emitting device 23 is [440 nm, 580 nm], and the corresponding spectral curve of the light-emitting device 23 shows two peaks, that is, the light-emitting device 23 has two emission peaks, which are in the range of [450 nm, 460 nm] and [545 nm, 555 nm], respectively. When the cavity length adjustment layer 233 has a thickness of 90 nm, the emission band of the light-emitting device 23 includes [435 nm, 480 nm] and [520 nm, 580 nm], with the first emission peak in the range of [445 nm, 455 nm] and the second emission peak in the range of [555 nm, 560 nm]. When the cavity length adjustment layer 233 is 100 nm, the emission band of the light-emitting device 23 is [450 nm, 480 nm], and the emission peak is in the range of [445 nm, 455 nm]. When the thickness of the cavity length adjustment layer 233 is 110 nm, the emission band of the light-emitting device 23 is [450 nm, 480 nm], and the emission peak is in the range of [455 nm, 465 nm]. When the thickness of the cavity length adjustment layer 233 is 120 nm, the emission band of the light-emitting device 23 is [445 nm, 480 nm], and the emission peak is in the range of [465 nm, 470 nm]. When the thickness of the cavity length adjustment layer 233 is 130 nm, the emission band of the light-emitting device 23 is [455 nm, 530 nm], and the emission peak is in the range of [470 nm, 480 nm]. When the thickness of the cavity length adjustment layer 233 is 140 nm, the emission band of the light-emitting device 23 is [455 nm, 540 nm], and the emission peak is in the range of [480 nm, 490 nm].
[0098] Figure 6 The graph shows the relationship between the overall brightness of the light-emitting device and the thickness of the cavity length adjustment layer when the light-emitting device consists of two blue light-emitting layers and one green light-emitting layer. Figure 6The horizontal axis represents wavelength, and the vertical axis represents brightness. Figure 7 The graphs show the absorption and emission spectra of the red wavelength conversion unit. Figure 8 The absorption and emission spectra of the green wavelength conversion unit are shown. Figure 7 and Figure 8 The horizontal axis represents wavelength, and the vertical axis represents light intensity. Figure 7 It can be seen that the light absorption band of the red wavelength conversion unit 24r is 380nm~650nm, and the intrinsic emission peak is 625nm; from Figure 8 It can be seen that the light absorption band of the green wavelength conversion unit 24g is 380nm~540nm, and the intrinsic emission peak is 525nm.
[0099] according to Figures 5 to 8 For each curve in the figure, when the light-emitting device 23 includes two blue light-emitting layers and one green light-emitting layer, the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the red wavelength conversion unit 24r can be set in the range of [100nm, 120nm], for example, 100nm or 110nm, so that the emission band of the light-emitting device 23 corresponding to the red wavelength conversion unit 24r includes [380nm, 480nm], that is, the emitted light includes blue light and the emission peak is in the range of [450nm, 470nm]; the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the green wavelength conversion unit 24g can be set in the range of [70nm, 90nm], for example, 70nm or 80nm or 90nm, so that the emitted light of the light-emitting device 23 corresponding to the green wavelength conversion unit 24g is in the range of [380nm, 580nm], that is, the emitted light includes blue light and green light. When the light-emitting device 23 corresponding to the scattering unit 241 includes a cavity length adjustment layer 233, the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the scattering unit 241 can be set in the range of [100nm, 120nm], for example, 100nm, 110nm, or 120nm, so that the emitted light of the light-emitting device 23 corresponding to the scattering unit 241 is in the range of [380nm, 480nm], that is, emitted blue light. This allows at least one emission peak of the light-emitting device 23 corresponding to the wavelength conversion unit 24 to be less than or equal to the intrinsic emission peak of the wavelength conversion unit 24, and the light absorption band of the wavelength conversion unit 24 overlaps with the emission band of the corresponding light-emitting device 23. At the same time, it can also ensure that the brightness of the light-emitting device 23 is high.
[0100] In other embodiments, the plurality of light-emitting layers 2343 in the light-emitting device 23 include a blue light-emitting layer and a yellow light-emitting layer, for example, the yellow light-emitting layer is located on the side of the blue light-emitting layer away from the substrate 10. Figure 9 This is a peak diagram of a light-emitting device consisting of a blue light-emitting layer and a yellow light-emitting layer. Figure 9 The horizontal axis represents wavelength, and the vertical axis represents normalized light intensity. For example... Figure 9 As shown, when the thickness of the cavity length adjustment layer 233 is 100nm, the emission band of the light-emitting device 23 is [400nm, 480nm]; when the thickness of the cavity length adjustment layer 233 is 110nm, the emission band of the light-emitting device 23 is [420nm, 480nm]; when the thickness of the cavity length adjustment layer 233 is 120nm, the emission band of the light-emitting device 23 is [430nm, 480nm]; when the thickness of the cavity length adjustment layer 233 is in the range of [130nm, 150nm], the emission band of the light-emitting device 23 is [430nm, 580nm]; when the thickness of the cavity length adjustment layer 233 is in the range of (150nm, 170nm), the emission band of the light-emitting device 23 includes: [380nm, 480nm] and [580nm, 680nm].
[0101] Figure 10 The graph shows the relationship between the overall brightness of the light-emitting device and the thickness of the cavity length adjustment layer when the light-emitting device consists of a blue light-emitting layer and a yellow light-emitting layer. Figure 10 The horizontal axis represents the thickness of the cavity length adjustment layer, and the vertical axis represents the light emission brightness of the light-emitting device. (Combined with...) Figures 7 to 10For each curve in the figure, when each light-emitting device 23 includes a blue light-emitting layer and a yellow light-emitting layer, the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the red wavelength conversion unit 24r can be set in the range of [150nm, 170nm], for example, 150nm, 160nm, or 170nm, so that the light emission band of the light-emitting device 23 corresponding to the red wavelength conversion unit 24r includes the [380nm, 480nm] band and the [580nm, 680nm] band, that is, the emitted light includes blue light and red light, and the red wavelength conversion unit 24r corresponding to The light emission peak of the light-emitting device 23 is less than 580nm; the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the green wavelength conversion unit 24g is set in the range of [130nm, 150nm), for example, 130nm, 135nm, 140nm, or 145nm, so that the light emission band of the light-emitting device 23 corresponding to the green wavelength conversion unit 24g includes [380nm, 580nm], that is, the emitted light includes blue light and green light, and at least one light emission peak of the light-emitting device 23 corresponding to the green wavelength conversion unit 24g is less than 525nm. When a cavity length adjustment layer 233 is provided in the light-emitting device 23 corresponding to the scattering unit 241, the thickness of the cavity length adjustment layer 233 in the light-emitting device 23 corresponding to the scattering unit 241 can be set in the range of [100nm, 120nm], for example, 100nm, 110nm, or 120nm, so that the wavelength of the emitted light of the light-emitting device 23 corresponding to the scattering unit 241 is in the range of [380nm, 480nm], that is, the emitted light is blue light. This allows at least one emission peak of the light-emitting device 23 corresponding to the wavelength conversion unit to be less than or equal to the intrinsic emission peak of the wavelength conversion unit 24, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the corresponding light-emitting device 23. At the same time, it can also ensure that the brightness of the light-emitting device 23 is high.
[0102] Figure 11 This is a schematic diagram of a display panel provided in some other embodiments of this disclosure. Figure 11 The display panel shown is Figure 1 The display panel is similar to that in other systems, the only difference being... Figure 1 The display panel in the middle adopts an On-EL structure (that is, the color conversion layer is directly fabricated on the first encapsulation layer 25), and Figure 11 The display panel adopts a box-type structure, that is, the display panel also includes: a cover plate 30 and a filler layer 29, the cover plate 30 is disposed opposite to the substrate 10; a color conversion layer is disposed on the side of the cover plate 30 facing the substrate 10, and a second encapsulation layer 28 is disposed on the side of the color conversion layer away from the cover plate 30, for encapsulating the color conversion layer. The first encapsulation layer 25 and the second encapsulation layer 28 are connected by the filler layer 29 between them.
[0103] Figure 12This is a flowchart illustrating a method for manufacturing a display panel according to some embodiments of this disclosure. This method is used to manufacture the display panel described in the above embodiments. Figure 12 As shown, the manufacturing method includes:
[0104] S10. A plurality of light-emitting devices are formed on a substrate. Each light-emitting device includes, in a direction away from the substrate, a first electrode, a plurality of light-emitting units, and a second electrode arranged sequentially. The first electrode is a reflective electrode, and the second electrode is a transmissive-reflective electrode. A microcavity structure is formed between the first electrode and the second electrode. The cavity length of the microcavity structure is related to the thickness of the cavity length adjustment layer. Each light-emitting unit includes a light-emitting layer. Light emitted from the light-emitting layers of the plurality of light-emitting units oscillates multiple times within the microcavity structure, causing the light-emitting device to emit light in a wavelength band corresponding to the cavity length of the microcavity structure. In the same light-emitting device, at least two of the light-emitting layers emit different colors. At least one of the light-emitting devices further includes a cavity length adjustment layer located between the first electrode and its adjacent light-emitting unit.
[0105] S20. A color conversion layer is formed, the color conversion layer including a plurality of wavelength conversion units, each wavelength conversion unit corresponding to a light-emitting device having the cavity length adjustment layer, the wavelength conversion unit being disposed on the light-emitting side of the light-emitting device, and used to convert light irradiated to the wavelength conversion unit and within its light absorption band into light of the target color and emit it.
[0106] Wherein, at least one emission peak in the emission band of the light-emitting device is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the light-emitting device.
[0107] Prior to step S10, the process may further include: forming a driving structure layer on a substrate, the driving structure layer including: multiple pixel circuits, each pixel circuit including multiple thin-film transistors, the pixel circuits corresponding one-to-one with light-emitting devices, and providing driving current to the corresponding light-emitting devices.
[0108] In some embodiments, the plurality of light-emitting devices include: a plurality of first light-emitting devices, a plurality of second light-emitting devices, and a plurality of third light-emitting devices; the thickness of the cavity length adjustment layer in the first light-emitting device is a first thickness, the thickness of the cavity length adjustment layer in the second light-emitting device is a second thickness, and the thickness of the cavity length adjustment layer in the third light-emitting device is a third thickness, wherein the second thickness is greater than the first thickness and the third thickness is greater than the second thickness.
[0109] Figures 13A to 13H This is a schematic diagram of step S10 in the method for manufacturing a display panel provided in some embodiments of this disclosure, as shown below. Figures 13A to 13HAs shown, step S10 specifically includes:
[0110] S11. A conductive material layer 231a for fabricating a first electrode is formed on the substrate 10. For example, the conductive material layer 231a includes a first transparent conductive material layer and a metal material layer.
[0111] S121, Form a first cavity length adjustment film layer 233a with a first thickness.
[0112] S13. A second cavity length adjustment sublayer 2332 with a fourth thickness is formed at the position corresponding to each second light-emitting device; wherein the second cavity length adjustment sublayer 2332 is located on the side of the first cavity length adjustment film layer 233a away from the substrate 10. The fourth thickness is the difference between the first thickness and the second thickness.
[0113] Step S13 may include:
[0114] S131, such as Figure 13A As shown, the first photoresist layer PR1 is formed.
[0115] S132. A first through hole V1 is formed on the first photoresist layer PR1 corresponding to the position of each second light-emitting device.
[0116] S133, such as Figure 13B As shown, a second cavity length adjustment film layer 233b with a fourth thickness is formed. A portion of the second cavity length adjustment film layer 233b is located in the first via V1, and another portion is located on the surface of the first photoresist layer PR1 away from the substrate 10.
[0117] S134, such as Figure 13C As shown, the first photoresist layer PR1 is removed to remove the second cavity length adjustment film layer 233b on the first photoresist layer PR1. The second cavity length adjustment film layer 233b in the first via V1 serves as the second cavity length adjustment sublayer 2332.
[0118] After step S13, proceed to step S14: at the position corresponding to each third light-emitting device, form a third cavity length adjustment sublayer with a fifth thickness. The fifth thickness is the difference between the third thickness and the first thickness.
[0119] Step S14 may include:
[0120] S141, such as Figure 13D As shown, a second photoresist layer PR2 is formed, and a second via V2 is formed on the second photoresist layer PR2 corresponding to the position of each third light-emitting device.
[0121] S143, such as Figure 13EAs shown, a third cavity length adjustment film layer 233c with a fifth thickness is formed. A portion of the third cavity length adjustment film layer 233c is located in the second via V2, and another portion is located on the surface of the second photoresist layer PR2 away from the substrate 10.
[0122] S144, such as Figure 13F As shown, the second photoresist layer PR2 is removed to remove the third cavity length adjustment film layer on the second photoresist layer PR2. The third cavity length adjustment film layer 233c in the second via V2 serves as the third cavity length adjustment sublayer 2333.
[0123] Next, proceed to step S122: as follows Figure 13G As shown, a patterning process is performed on the first cavity length adjustment film layer 233a to form a first cavity length adjustment sublayer 2331 of first thickness at the location of each light-emitting device.
[0124] Specifically, steps S121 and S122 are steps for fabricating the first cavity length adjustment sublayer 2331. The first cavity length adjustment sublayer 2331 at the location of the first light-emitting device serves as the cavity length adjustment layer 233 of the first light-emitting device. The first cavity length adjustment sublayer 2331 and the second cavity length adjustment sublayer 2332 at the location of the second light-emitting device together serve as the cavity length adjustment layer 233 of the second light-emitting device. The first cavity length adjustment sublayer 2331 and the third cavity length adjustment sublayer 2333 at the location of the third light-emitting device together serve as the cavity length adjustment layer 233 of the third light-emitting device.
[0125] Next, step S15 is performed: a photolithography patterning process is applied to the conductive material layer 231a to form the first electrode 231 of each light-emitting device, such as... Figure 13H As shown.
[0126] It should be noted that the above method for manufacturing the light-emitting device is only illustrative, and multiple light-emitting devices can be formed through other manufacturing steps or sequences. For example, step S122 can be performed before step S13. For example, step S15 can be performed between step S11 and step S121.
[0127] When the display panel adopts Figure 1 The fabrication method of the structure shown may further include: forming a first encapsulation layer after forming multiple light-emitting devices and before forming a color conversion layer; and sequentially forming a second encapsulation layer and a color filter layer after forming the color conversion layer. When the display panel adopts... Figure 11 In the structure shown, a first encapsulation layer is formed on the side of the multiple light-emitting devices away from the substrate on the substrate; and a color filter layer, a color conversion layer, and a second encapsulation layer located on the side of the color conversion layer away from the cover plate are formed on the cover plate. Then, the substrate of the formed light-emitting devices and the cover plate on which the color conversion layer is formed are assembled together, and the first encapsulation layer and the second encapsulation layer are connected by a filler layer.
[0128] This disclosure also provides a display device, which includes the display panel described in the above embodiments. The display device can be any product or component with display functionality, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator.
[0129] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.
Claims
1. A display panel, characterized in that, include: A plurality of light-emitting devices are disposed on a substrate, each light-emitting device comprising, in a direction away from the substrate, a first electrode, a plurality of light-emitting units, and a second electrode arranged sequentially; wherein, the first electrode is a reflective electrode, the second electrode is a transmissive-reflective electrode, and a microcavity structure is formed between the first electrode and the second electrode; each light-emitting unit includes a light-emitting layer, and in the same light-emitting device, at least two of the light-emitting layers emit different colors; at least one light-emitting device further includes a cavity length adjustment layer, the cavity length adjustment layer being located between the first electrode and its adjacent light-emitting unit; The color conversion layer includes multiple wavelength conversion units, each wavelength conversion unit corresponding to a light-emitting device having the cavity length adjustment layer. The wavelength conversion unit is disposed on the light-emitting side of the light-emitting device and is used to convert light that is irradiated to the wavelength conversion unit and is within its light absorption band into light of the target color and emit it. Wherein, at least one emission peak in the emission band of the light-emitting device is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the light-emitting device; The color conversion layer has multiple wavelength conversion units of various types, each corresponding to a different target color, and the light emission band of the light-emitting device corresponding to each type of wavelength conversion unit is different. The color conversion layer also includes multiple scattering units, each scattering unit corresponding to a light-emitting device. The display panel further includes a color filter layer, which is disposed on the side of the color conversion layer away from the substrate. The color filter layer includes a plurality of color filters, each of the scattering units and each of the wavelength conversion units corresponds to one of the color filters, and the color of the color filter is the same as the emitted color of its corresponding scattering unit or wavelength conversion unit.
2. The display panel according to claim 1, characterized in that, The overlap between the light absorption band of the wavelength conversion unit and the light emission band of the light-emitting device accounts for 50% to 100% of the light emission band.
3. The display panel according to claim 1, characterized in that, The multiple wavelength conversion units include a red wavelength conversion unit and a green wavelength conversion unit. The target color corresponding to the red wavelength conversion unit is red, and the target color corresponding to the green wavelength conversion unit is green. The light-emitting device corresponding to the red wavelength conversion unit has a light-emitting band of [380nm, 480nm]; the light-emitting device corresponding to the green wavelength conversion unit has a light-emitting band of [380nm, 580nm]. The light emission bands of the light-emitting devices corresponding to the scattering units include [380nm, 480nm].
4. The display panel according to claim 3, characterized in that, The thickness of the cavity length adjustment layer varies depending on the type of wavelength conversion unit.
5. The display panel according to claim 4, characterized in that, Each light-emitting device comprises multiple light-emitting layers including: two blue light-emitting layers and a green light-emitting layer located between the two blue light-emitting layers; The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the red wavelength conversion unit is in the range of [100nm, 120nm], so that the light emission band of the light-emitting device corresponding to the red wavelength conversion unit includes [380nm, 480nm]. The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the green wavelength conversion unit is in the range of [70nm, 90nm], so that the light emission band of the light-emitting device corresponding to the green wavelength conversion unit includes [380nm, 580nm].
6. The display panel according to claim 4, characterized in that, Each light-emitting device contains multiple light-emitting layers, including: a blue light-emitting layer and a yellow light-emitting layer; The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the red wavelength conversion unit is in the range of [150nm, 170nm], so that the light emission band of the light-emitting device corresponding to the red wavelength conversion unit includes: [380nm, 480nm] and [580nm, 680nm]. The thickness of the cavity length adjustment layer in the light-emitting device corresponding to the green wavelength conversion unit is in the range of [130nm, 150nm) so that the light emission band of the light-emitting device corresponding to the green wavelength conversion unit includes [380nm, 580nm].
7. The display panel according to any one of claims 1 to 6, characterized in that, The wavelength conversion unit is made of quantum dot materials.
8. The display panel according to any one of claims 1 to 6, characterized in that, The first electrode includes a first transparent conductive layer and a metal reflective layer, wherein the metal reflective layer is located on the side of the first transparent conductive layer away from the substrate.
9. The display panel according to claim 8, characterized in that, The cavity length adjustment layer is made of a transparent conductive material; Alternatively, the cavity length adjustment layer may be made of a transparent insulating material, and a second transparent conductive layer may be provided on the side of the cavity length adjustment layer away from the substrate. The orthographic projection of the second transparent conductive layer on the substrate may exceed the orthographic projection of the cavity length adjustment layer on the substrate, and the portion of the second transparent conductive layer that exceeds the cavity length adjustment layer may be electrically connected to the first electrode.
10. The display panel according to any one of claims 1 to 6, characterized in that, Each light-emitting device includes N light-emitting units arranged sequentially along the direction away from the substrate, wherein the light-emitting layer of the i-th light-emitting unit of the plurality of light-emitting devices is an integral structure; N and i are both integers, N>1, 0<i<N.
11. The display panel according to any one of claims 1 to 6, characterized in that, A charge generation layer is provided between each pair of adjacent light-emitting units in the same light-emitting device.
12. The display panel according to any one of claims 1 to 6, characterized in that, The display panel further includes: a first encapsulation layer and a second encapsulation layer; wherein... The first encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate, and is used to encapsulate the plurality of light-emitting devices; The color conversion layer is disposed on the side of the first encapsulation layer away from the substrate; The second encapsulation layer is disposed on the side of the color conversion layer away from the substrate, and is used to encapsulate the color conversion layer.
13. The display panel according to any one of claims 1 to 6, characterized in that, The display panel further includes: a cover plate, a first encapsulation layer, a second encapsulation layer, and a filler layer, wherein, The first encapsulation layer is disposed on the side of the plurality of light-emitting devices away from the substrate, and is used to encapsulate the plurality of light-emitting devices; The cover plate is disposed opposite to the base; The color conversion layer is disposed on the side of the cover plate facing the substrate, and the second encapsulation layer is disposed on the side of the color conversion layer away from the cover plate, for encapsulating the color conversion layer; The filler layer is disposed between the first encapsulation layer and the second encapsulation layer.
14. A method for manufacturing a display panel, characterized in that, include: Multiple light-emitting devices are formed on a substrate. Each light-emitting device includes, in a direction away from the substrate, a first electrode, multiple light-emitting units, and a second electrode arranged sequentially. The first electrode is a reflective electrode, and the second electrode is a transmissive-reflective electrode. A microcavity structure is formed between the first electrode and the second electrode. Each light-emitting unit includes a light-emitting layer. In the same light-emitting device, at least two of the light-emitting layers emit different colors. At least one light-emitting device also includes a cavity length adjustment layer located between the first electrode and its adjacent light-emitting unit. A color conversion layer is formed, comprising multiple wavelength conversion units and multiple scattering units. Each wavelength conversion unit corresponds to a light-emitting device having the cavity length adjustment layer. The wavelength conversion unit is disposed on the light-emitting side of the light-emitting device and is used to convert light irradiated to the wavelength conversion unit and within its light absorption band into light of the target color and emit it. The multiple wavelength conversion units of the color conversion layer are of various types, with different target colors corresponding to different types of wavelength conversion units, and different light-emitting bands corresponding to different types of wavelength conversion units. Each scattering unit corresponds to one light-emitting device. A color filter layer is formed on the side of the color conversion layer away from the substrate. The color filter layer includes a plurality of color filters, and each scattering unit and each wavelength conversion unit corresponds to one color filter. The color of the color filter is the same as the emitted color of its corresponding scattering unit or wavelength conversion unit. Wherein, at least one emission peak in the emission band of the light-emitting device is less than or equal to the intrinsic emission peak of the corresponding wavelength conversion unit, and the light absorption band of the wavelength conversion unit overlaps with the emission band of the light-emitting device.
15. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 13.