Neural microelectrodes with temperature control and temperature measurement functions and their fabrication method

Abstract

This disclosure provides a neural microelectrode with temperature control and temperature measurement functions, which can be applied in the field of microelectromechanical systems (MEMS) biosensor technology. The neural microelectrode includes: a substrate including a detection region; a microelectrode array disposed on the substrate and overlapping with the detection region, the microelectrode array being used to measure the electrical signal of a analyte; a temperature control element disposed on the substrate and overlapping with the detection region, used to control the temperature of the detection region; a temperature measurement element disposed on the substrate and overlapping with the detection region, used to measure the temperature of the detection region; and an insulating layer disposed on the microelectrode array, the temperature control element, and the temperature measurement element, covering the microelectrode array, the temperature control element, and the temperature measurement element. This disclosure integrates temperature control and temperature measurement functions with the neural microelectrode, realizing temperature control and temperature measurement of neurons, while simultaneously recording the electrical signals of neurons.

Description

Technical Field

[0001] This disclosure relates to the field of microelectromechanical systems (MEMS) biosensor technology, specifically to a neural microelectrode with temperature control and temperature measurement functions and its preparation method. Background Technology

[0002] Electroencephalography (EEG) signals are important physiological electrical signals. They consist of oscillations at different frequencies, with characteristic frequency ranges and spatial distributions, related to different functional states of the brain and representing synchronized activities characteristic of neural networks. By acquiring and analyzing EEG signals at specific frequencies, we can understand the physiological state of an organism. Neural electrodes can be surgically implanted into the cerebral cortex to record the electrical signals of neuronal activity and achieve long-term in vivo recording. By analyzing the electrical signals of neuronal activity, we can analyze and model the brain's state.

[0003] Multifunctional electrode technology holds great potential in neuroscience. Closed-loop electrophysiological recordings that modulate neural activity with electrical, optical, thermal, or biochemical signals can help elucidate neural circuits and the connectivity between neurons that make up those circuits, as well as decode potential causal relationships between the activity and behavior of individual neurons. For example, Tao Zhou et al. published "Syringe-injectable mesh electronics integrate seamlessly with minimalchronic immune response in the brain" in Proceedings of the National Academy of Sciences (2017, 114(23):5894-5899). This paper combines mesh electronic probes with low-impedance stimulation electrodes to achieve simultaneous low-current stimulation and recording of individual neurons. For instance, CN109820481A discloses a neural photoelectrode and its fabrication method, which uses a sapphire light array to stimulate multiple brain regions and uses microfilament electrodes to record neuronal signals.

[0004] Since temperature is also an important factor affecting neuronal function, precise local control of neuronal temperature can help study the causal relationship between neuronal activity and behavior. However, currently there are no neural microelectrodes that can precisely control neuronal temperature. Summary of the Invention

[0005] In view of the above problems, this disclosure provides a neural microelectrode with temperature control and temperature measurement functions and a method for its fabrication.

[0006] According to a first aspect of this disclosure, a neural microelectrode with temperature control and temperature measurement functions is provided, comprising:

[0007] The substrate, including the detection area;

[0008] A microelectrode array, disposed on a substrate and overlapping with the detection area, is used to measure the electrical signal of the analyte.

[0009] A temperature control element is disposed on the substrate and overlaps with the detection area. The temperature control element is used to control the temperature of the detection area.

[0010] A temperature measuring element is disposed on a substrate and overlaps with the detection area; the temperature measuring element is used to measure the temperature of the detection area.

[0011] An insulating layer is disposed on the microelectrode array, temperature control element, and temperature measuring element, covering the microelectrode array, temperature control element, and temperature measuring element.

[0012] According to embodiments of this disclosure, the substrate further includes a non-detection region; the temperature control element includes multiple sets of p-type semiconductors, n-type semiconductors, and metal interconnects connected in series.

[0013] The current input and current output terminals of the temperature control element are both located in the non-detection area.

[0014] According to embodiments of this disclosure, in a set of series-connected p-type semiconductors, n-type semiconductors and metal interconnects, a p-type semiconductor or an n-type semiconductor is disposed between two metal interconnects.

[0015] According to embodiments of this disclosure, the current input terminal of the p-type semiconductor and the current output terminal of the n-type semiconductor are disposed in the same direction of the detection region, and the current output terminal of the p-type semiconductor and the current input terminal of the n-type semiconductor are disposed in opposite directions of the same direction.

[0016] According to embodiments of this disclosure, the temperature measuring element comprises two different types of metal, which are disposed on both sides of the temperature measuring element.

[0017] According to embodiments of this disclosure, it further includes: a substrate disposed on a base;

[0018] The microelectrode array, temperature measuring element, and temperature control element are disposed between the substrate and the insulating layer, and the microelectrode array, temperature measuring element, and temperature control element are disposed on the same layer on the substrate.

[0019] According to an embodiment of this disclosure, the temperature measuring element is disposed on the outside of the microelectrode array, and the outside of the microelectrode array is spaced apart from the inside of the temperature measuring element by a predetermined distance.

[0020] According to an embodiment of this disclosure, the microelectrode array is disposed on the outside of the temperature control element, and the outside of the temperature control element and the inside of the microelectrode array are spaced apart by a predetermined distance.

[0021] According to an embodiment of this disclosure, a probe is disposed in the detection area, and the substrate material of the probe is silicon.

[0022] According to a second aspect of this disclosure, a method for fabricating a neural microelectrode with temperature control and temperature measurement functions is provided, comprising:

[0023] Silicon oxide and silicon nitride are grown sequentially on a substrate to obtain a substrate on the substrate;

[0024] Metal interconnects for microelectrode arrays and temperature control elements are patterned and deposited on a substrate;

[0025] A temperature control element is obtained by depositing p-type and n-type semiconductors on a metal interconnect.

[0026] Patterning and depositing temperature measurement elements on a substrate;

[0027] An insulating layer is deposited on a temperature measuring element, a microelectrode array, a temperature control element, and a substrate to obtain a neural microelectrode to be etched. The insulating layer covers the temperature measuring element, the microelectrode array, the temperature control element, and the substrate.

[0028] The neural microelectrode to be etched is etched from the direction of the insulating layer to obtain the front structure of the neural microelectrode to be etched.

[0029] The neural microelectrode to be etched is etched from the direction of the substrate to obtain the back structure of the neural microelectrode to be etched.

[0030] This disclosure provides a neural microelectrode with temperature control and temperature measurement functions. By integrating temperature control and temperature measurement elements on the neural microelectrode, the temperature control and temperature measurement functions are integrated into one unit, realizing simultaneous temperature control, temperature measurement and electrophysiological signal measurement during measurement.

[0031] Furthermore, this disclosure integrates temperature control elements and temperature measurement elements into a small-sized neural microelectrode, and through the special structure of the temperature control elements and temperature measurement elements, it achieves precise control of temperature changes and precise detection of temperature changes in the detection area, thereby improving the accuracy of the electrophysiological signals measured by the neural microelectrode in response to temperature. Attached Figure Description

[0032] The foregoing contents, as well as other objects, features, and advantages of this disclosure, will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0033] Figure 1 An explosion diagram of a neural microelectrode according to an embodiment of the present disclosure is shown schematically;

[0034] Figure 2 The schematic diagram illustrates a structural schematic of a neural microelectrode with temperature control and temperature measurement functions according to an embodiment of the present disclosure.

[0035] Figure 3 An enlarged view of the detection area according to an embodiment of the present disclosure is schematically shown;

[0036] Figure 4 A schematic diagram of a temperature control element according to an embodiment of the present disclosure is shown;

[0037] Figure 5 A schematic diagram of a temperature measuring element according to an embodiment of the present disclosure is shown;

[0038] Figure 6A A schematic diagram of a substrate prepared according to the present disclosure is shown.

[0039] Figure 6B A schematic diagram of the substrate deposition process according to the preparation method of this disclosure is shown.

[0040] Figure 6C The schematic diagram illustrates the metal interconnection of the microelectrode array and temperature control element in the fabrication method according to this disclosure;

[0041] Figure 6D The schematic diagram illustrates the p-type and n-type semiconductors after growth of temperature-controlled elements according to the fabrication method of this disclosure;

[0042] Figure 6E A schematic diagram is shown after the growth temperature measuring element in the preparation method according to this disclosure;

[0043] Figure 6F A schematic diagram is shown after the growth of the insulating layer according to the preparation method of this disclosure;

[0044] Figure 6G A schematic diagram of the front structure of the neural microelectrode after etching according to the fabrication method of this disclosure is shown.

[0045] Figure 6H A schematic diagram of the back structure of a neural microelectrode after etching according to the fabrication method of this disclosure is shown. Detailed Implementation

[0046] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0047] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0048] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0049] When using expressions such as "at least one of A, B, and C", they should generally be interpreted in accordance with the meaning that is commonly understood by a person skilled in the art (e.g., "a system having at least one of A, B, and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B, and C, etc.).

[0050] Figure 1 An exploded view of a neural microelectrode according to an embodiment of the present disclosure is shown schematically.

[0051] According to embodiments of this disclosure, such as Figure 1 As shown, a neural microelectrode with temperature control and temperature measurement functions includes: a substrate 1, a microelectrode array 3, a temperature control element 4, a temperature measurement element 5, and an insulating layer 6.

[0052] According to embodiments of this disclosure, the analyte includes a neuron. The neural microelectrode provided in this disclosure can measure the neuronal electrical signals generated by the neuron during temperature changes.

[0053] According to embodiments of this disclosure, substrate 1 includes a detection region and a non-detection region. For example... Figure 1 As shown, the cone-shaped region in front of basal 1 is the probe region, which measures the electrical signals generated by the neuron in response to temperature changes by contacting the neuron. The other regions on basal 1 are non-probe regions.

[0054] The microelectrode array 3 is disposed on the substrate 1, and the microelectrode array 3 and the substrate 1 have an overlapping portion, which is used to measure the electrical signal of the test object.

[0055] Temperature control element 4 is disposed on substrate 1 and overlaps with the detection area. Temperature control element 4 controls the temperature of the detection area through the structure of the detection area. Electrodes are disposed on the non-overlapping portion of temperature control element 4 and the detection area, used to control the temperature of the detection area by applying currents of different directions and magnitudes.

[0056] A temperature measuring element 5 is disposed on the substrate 1 and overlaps with the detection area. The temperature measuring element 5 can measure the temperature of the detection area through the construction of the overlapping portion with the detection area. Electrodes are disposed on the non-overlapping portion of the temperature measuring element 5 with the detection area to generate a thermoelectric voltage through the temperature difference between the detection area and the non-detection area, thereby measuring the temperature of the detection area in real time.

[0057] An insulating layer 6 is disposed on the microelectrode array 3, the temperature control element 4, and the temperature measuring element 5, covering the microelectrode array 3, the temperature control element 4, and the temperature measuring element 5. Multiple electrodes are disposed on the overlapping portion of the insulating layer 6 and the non-detection area of ​​the substrate, for controlling the microelectrode array 3, the temperature control element 4, and the temperature measuring element 5.

[0058] This disclosure provides a neural microelectrode with temperature control and temperature measurement functions. By integrating temperature control elements and temperature measurement elements on the neural microelectrode, temperature control, temperature measurement and electrophysiological recording can be achieved simultaneously during measurement.

[0059] Furthermore, this disclosure integrates temperature control elements and temperature measurement elements into a small-sized neural microelectrode, and through the special structure of the temperature control elements and temperature measurement elements, it achieves precise control of temperature changes and precise detection of temperature changes in the detection area, thereby improving the accuracy of the electrophysiological signals measured by the neural microelectrode in response to temperature.

[0060] Simultaneous temperature control, temperature measurement, and electrophysiological recording in living organisms solves the problem of not being able to study the effects of temperature on neuronal systems in living organisms.

[0061] Figure 2 The schematic diagram illustrates a structural schematic of a neural microelectrode with temperature control and temperature measurement functions according to an embodiment of the present disclosure. Figure 3 An enlarged view of the detection area according to an embodiment of the present disclosure is shown schematically.

[0062] According to embodiments of this disclosure, substrate 1 includes a detection region and a non-detection region. For example... Figure 2 and Figure 3As shown, the area below the needle tip of the neural microelectrode is the detection area, while the area above the needle handle is the non-detection area. Figure 3 As shown in the enlarged view of the detection area, the positional relationship of the microelectrode array 3, the temperature control element 4, and the temperature measuring element 5 is schematically illustrated.

[0063] The temperature control element 4 comprises multiple sets of p-type semiconductors, n-type semiconductors, and metal interconnects connected in series. Both the current input and current output terminals of the temperature control element 4 are located within the non-detection area. The current input and current output terminals are electrodes located above the insulating layer 6.

[0064] It should be noted that the current input direction of the temperature control element 4 can be changed, and the current input terminals are opposite each other.

[0065] According to embodiments of this disclosure, the temperature control element can be a semiconductor temperature control element.

[0066] like Figure 2 As shown, multiple sets of series-connected p-type semiconductors, n-type semiconductors, and metal wires of the temperature control element 4 are located in the detection area and are connected to the current input and current output terminals of the non-detection area through the metal wires.

[0067] According to embodiments of this disclosure, in a set of series-connected p-type semiconductors, n-type semiconductors and metal interconnects, a p-type semiconductor or an n-type semiconductor is disposed between two metal interconnects.

[0068] Figure 4 A schematic diagram of a temperature control element according to an embodiment of the present disclosure is shown.

[0069] like Figure 4 As shown, the temperature control element 4 includes a p-type semiconductor 41, an n-type semiconductor 42, and a metal interconnect 43. The p-type semiconductor 41 and the n-type semiconductor 42 are connected in series through the metal interconnect 43.

[0070] Specifically, the current input terminal of the p-type semiconductor and the current output terminal of the n-type semiconductor are located in the same direction of the detection region, while the current output terminal of the p-type semiconductor and the current input terminal of the n-type semiconductor are located in opposite directions within the same region.

[0071] like Figure 4 As shown, for the temperature control element 4, in a set of series-connected p-type semiconductors, n-type semiconductors and metal interconnects, it may include one p-type semiconductor 41 and an n-type semiconductor 42, or it may include two p-type semiconductors 41 and n-type semiconductors 42, or one p-type semiconductor 41 and two n-type semiconductors 42.

[0072] like Figure 4As shown, in a series of p-type semiconductors, n-type semiconductors and metal interconnects, two p-type semiconductors 41 and n-type semiconductors 42 are connected in series alternately, and one p-type semiconductor 41 and two n-type semiconductors 42 are connected in series alternately.

[0073] According to embodiments of this disclosure, the specific materials of p-type and n-type semiconductors are not limited herein.

[0074] According to embodiments of this disclosure, based on the Peltier effect, the temperature of the needle tip portion of the neural microelectrode is controlled by controlling the magnitude and direction of the current of the input temperature control element 4.

[0075] According to an embodiment of this disclosure, the temperature measuring element 5 includes two different types of metal, which are disposed on both sides of the temperature measuring element.

[0076] According to embodiments of this disclosure, the temperature measuring element can be a thermocouple.

[0077] like Figure 2 and Figure 3 As shown, the temperature measuring element 5 overlaps with the detection area, and the temperature measuring elements are symmetrically distributed within this overlap. Different types of metal are used on both sides of the temperature measuring element 4 within the detection area.

[0078] Figure 5 A schematic diagram of a temperature measuring element according to an embodiment of the present disclosure is shown.

[0079] like Figure 5 As shown in the enlarged view of the end of the temperature measuring element 5, the two sides of the temperature measuring element 5 are respectively set as metal 51 of the first material and metal 52 of the second material.

[0080] According to embodiments of this disclosure, the materials of the first metal 51 and the second metal 52 are not limited. For example, the two materials can be chromium and nickel, respectively.

[0081] According to embodiments of this disclosure, based on the Seebeck effect, the temperature measuring element 5 generates a thermoelectric voltage through the temperature difference between the tip and handle of the neural microelectrode, thereby measuring the tip temperature of the neural microelectrode in real time.

[0082] According to embodiments of this disclosure, such as Figure 1 As shown, the neural microelectrode provided in this disclosure also includes a substrate 2 disposed on a substrate 1. A microelectrode array 3, a temperature measuring element 5, and a temperature control element 4 are disposed between the substrate 2 and an insulating layer 6, and the microelectrode array 3, the temperature measuring element 5, and the temperature control element 4 are disposed on the same layer of the substrate 2.

[0083] According to embodiments of this disclosure, the microelectrode array 3, temperature measuring element 5, and temperature control element 4 on the substrate 2 are not in contact with each other.

[0084] According to embodiments of this disclosure, there are various positional relationships between the microelectrode array 3, the temperature measuring element 5, and the temperature control element 4. For example, the temperature measuring element 5 can be disposed outside the microelectrode array 3 and the temperature control element 4, and surround the microelectrode array 3 and the temperature control element 4. The temperature measuring element 5 can also be disposed inside the microelectrode array 3 and the temperature control element 4.

[0085] As one specific embodiment, such as Figure 2 As shown, the temperature measuring element 5 is disposed on the outside of the microelectrode array 3, and the outside of the microelectrode array 3 is spaced apart from the inside of the temperature measuring element 5 by a preset distance. The preset distance can be 5-20 micrometers to ensure that the outside of the microelectrode array 3 does not contact the temperature measuring element 5 and can be distributed in the detection area of ​​the neural microelectrode.

[0086] As one specific embodiment, such as Figure 2 As shown, the microelectrode array 3 is disposed outside the temperature control element 4, and the outer side of the temperature control element 4 is spaced apart from the inner side of the microelectrode array 3 by a preset distance. The preset distance can be 5-20 micrometers to ensure that the inner side of the microelectrode array 3 does not contact the temperature control element 4 and can be distributed in the detection area of ​​the neural microelectrode.

[0087] According to an embodiment of this disclosure, a probe is disposed in the detection area, and the probe substrate is made of silicon.

[0088] According to a second aspect of this disclosure, a method for fabricating a neural microelectrode with temperature control and temperature measurement functions is provided, comprising:

[0089] Silicon oxide and silicon nitride are grown sequentially on a substrate to obtain a substrate on the substrate;

[0090] Metal interconnects for microelectrode arrays and temperature control elements are patterned and deposited on a substrate;

[0091] A temperature control element is obtained by depositing p-type and n-type semiconductors on a metal interconnect.

[0092] Patterning and depositing temperature measurement elements on a substrate;

[0093] An insulating layer is deposited on a temperature measuring element, a microelectrode array, a temperature control element, and a substrate to obtain a neural microelectrode to be etched. The insulating layer covers the temperature measuring element, the microelectrode array, the temperature control element, and the substrate.

[0094] The neural microelectrode to be etched is etched from the direction of the insulating layer to obtain the front structure of the neural microelectrode to be etched.

[0095] The neural microelectrode to be etched is etched from the direction of the substrate to obtain the back structure of the neural microelectrode to be etched.

[0096] Figures 6A to 6H The schematic diagram illustrates the process flow for fabricating neural microelectrodes with temperature control and temperature measurement functions.

[0097] Figure 6A A schematic diagram of a substrate prepared according to the present disclosure is shown.

[0098] like Figure 6A As shown, the substrate for fabricating the neural microelectrode is a silicon substrate. Specifically, a 400-micrometer-thick double-polished silicon wafer can be selected as substrate 1.

[0099] Figure 6B A schematic diagram of the substrate after deposition is shown in the preparation method according to this disclosure.

[0100] like Figure 6B As shown, substrate 2 is deposited and grown on substrate 1. Specifically, a 500 nm silicon oxide and a 500 nm silicon nitride mixed film can be sequentially deposited and grown on substrate 1 as substrate 2 using plasma chemical vapor deposition.

[0101] Figure 6C The schematic diagram illustrates the metal interconnection of the microelectrode array and temperature control element grown according to the fabrication method of this disclosure.

[0102] like Figure 6C As shown, after depositing substrate 2 on substrate 1, metal interconnects 43 for microelectrode array and temperature control element are deposited on substrate 2.

[0103] Specifically, the metal interconnects 43 of the microelectrode array 3 and the temperature control element 4 are patterned and deposited on the substrate 2. For example, 10 nanometers of chromium and 200 nanometers of gold are sequentially sputtered on the upper surface of the substrate 2 using magnetron sputtering to serve as the microelectrode array 3 and the metal interconnects 43.

[0104] Figure 6D The schematic diagram illustrates the p-type and n-type semiconductors after growth of temperature-controlled elements according to the fabrication method of this disclosure.

[0105] The p-type semiconductor 41 and n-type semiconductor 42 of the temperature control element 4 are patterned on the substrate 2. Specifically, a 4-micrometer-thick layer of selenium-doped bismuth telluride can be deposited on the substrate 2 as the p-type semiconductor 41, and a 4-micrometer-thick layer of antimony-doped bismuth telluride can be deposited as the n-type semiconductor 42.

[0106] The p-type semiconductor 41 and n-type semiconductor 42 patterned and grown on the substrate 2 are partially deposited on the generated metal interconnect 43 so as to connect the p-type semiconductor 41 and n-type semiconductor 42 in series through the metal interconnect 43.

[0107] Figure 6E A schematic diagram is shown after the growth temperature measuring element in the preparation method according to this disclosure.

[0108] Two materials for the temperature measuring element are patterned and grown on substrate 2 to obtain temperature measuring element 5. Specifically, as shown... Figure 6E As shown, 100-nanometer-thick chromium and nickel can be deposited by magnetron sputtering to serve as metal 51 and metal 52, respectively, as temperature measuring elements.

[0109] Figure 6F A schematic diagram of the preparation method according to this disclosure after the growth of the insulating layer is shown.

[0110] like Figure 6F As shown, after depositing the microelectrode array 3, temperature control element 4, and temperature measurement element 5 on the substrate 2, an insulating layer is then grown on the microelectrode array 3, temperature control element 4, temperature measurement element 5, and substrate 2.

[0111] Specifically, a 300-nanometer silicon oxide layer 6 is grown as an insulating material layer on the microelectrode array 3, the temperature control element 4, the temperature measuring element 5, and the substrate 2 using plasma chemical vapor deposition. The insulating layer completely covers the microelectrode array 3, the temperature control element 4, the temperature measuring element 5, and the substrate 2.

[0112] Figure 6G A schematic diagram of the front structure of the neural microelectrode after etching according to the fabrication method of this disclosure is shown.

[0113] According to an embodiment of the present disclosure, after growing the insulating layer 6, the neural microelectrode to be etched is etched from the direction of the insulating layer to obtain the front structure of the neural microelectrode to be etched.

[0114] Specifically, such as Figure 6G As shown, a 300 nm silicon oxide insulating material layer is etched using reactive ion etching to expose the electrode leads 11 and the test window formed by the two leads 11. Reactive ion etching is used to sequentially etch 300 nm silicon oxide, 500 nm silicon nitride, and 500 nm silicon oxide, followed by deep silicon etching using the Bosch process to etch 10 μm silicon to obtain trench 12, forming the front structure of the neural microelectrode.

[0115] Figure 6H A schematic diagram of the back structure of a neural microelectrode after etching according to the fabrication method of this disclosure is shown.

[0116] According to an embodiment of the present disclosure, the neural microelectrode to be etched is etched from the direction of the substrate to obtain the back structure of the neural microelectrode to be etched.

[0117] Specifically, such as Figure 6H As shown, 390-micrometer silicon was etched from the substrate direction of the neural microelectrode using the Bosch deep silicon etching process. During the etching of the substrate 1 from the back side, a 10-micrometer-thick tip portion 13 was retained to form the back side structure of the neural microelectrode.

[0118] It should be noted that the microelectrode array 3, temperature control element 4 and temperature control element 5 of this disclosure have various positional relationships on the substrate 2. Figures 6A to 6H The process flow diagram is only used as an example to illustrate the hierarchical relationship within the neural microelectrode.

[0119] The method for fabricating a neural microelectrode with temperature control and temperature measurement functions disclosed herein is fully compatible with microelectromechanical systems (MEMS) processes, reducing the cost of fabricating neural microelectrodes with temperature control and temperature measurement functions.

[0120] This disclosure provides a neural microelectrode with temperature control and temperature measurement functions. By combining a temperature control element and a temperature measurement element with the neural microelectrode, it can record the electrical signals of neurons while changing the magnitude and direction of the input current to change the temperature of the brain region tested by the microelectrode, thereby measuring the brain temperature in real time and realizing the study of the effects of temperature changes on the nervous system.

[0121] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0122] The specific embodiments described above further illustrate the purpose, technical solutions, and beneficial effects of this disclosure. It should be understood that the above descriptions are merely specific embodiments of this disclosure and are not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A neural microelectrode with temperature control and temperature measurement functions, comprising: The substrate, including the detection area; A microelectrode array is disposed on the substrate and overlaps with the detection area; the microelectrode array is used to measure the electrical signal of the analyte. A temperature control element is disposed on the substrate and overlaps with the detection area, the temperature control element being used to control the temperature of the detection area; A temperature measuring element is disposed on the substrate and overlaps with the detection area; the temperature measuring element is used to measure the temperature of the detection area. An insulating layer is disposed on the microelectrode array, the temperature control element, and the temperature measuring element, covering the microelectrode array, the temperature control element, and the temperature measuring element; A substrate is disposed on the base. The microelectrode array, the temperature measuring element, and the temperature control element are disposed between the substrate and the insulating layer, and the microelectrode array, the temperature measuring element, and the temperature control element are disposed on the same layer on the substrate; The temperature measuring element is disposed on the outside of the microelectrode array, and the outside of the microelectrode array is spaced apart from the inside of the temperature measuring element by a preset distance. The microelectrode array is disposed on the outside of the temperature control element, and the outside of the temperature control element is spaced apart from the inside of the microelectrode array by a predetermined distance.

2. The neural microelectrode according to claim 1, wherein, The substrate also includes a non-detection region; the temperature control element includes multiple sets of p-type semiconductors, n-type semiconductors and metal interconnects connected in series; The current input terminal and current output terminal of the temperature control element are both located in the non-detection area.

3. The neural microelectrode according to claim 2, wherein, In a series of p-type semiconductors, n-type semiconductors and metal interconnects, one p-type semiconductor or one n-type semiconductor is disposed between two metal interconnects.

4. The neural microelectrode according to claim 3, wherein, The current input terminal of the p-type semiconductor and the current output terminal of the n-type semiconductor are located in the same direction as the detection area, while the current output terminal of the p-type semiconductor and the current input terminal of the n-type semiconductor are located in the opposite direction to the same direction.

5. The neural microelectrode according to claim 1, wherein, The temperature measuring element comprises two different types of metal, which are disposed on both sides of the temperature measuring element.

6. The neural microelectrode according to claim 1, wherein, A probe is provided in the detection area, and the substrate material of the probe is silicon.

7. A method for fabricating a neural microelectrode with temperature control and temperature measurement functions as described in any one of claims 1 to 6, comprising: Silicon oxide and silicon nitride are grown sequentially on a substrate to obtain a substrate on the substrate; Metal interconnects for a microelectrode array and a temperature control element are patterned and deposited on the substrate. The temperature control element is obtained by depositing p-type and n-type semiconductors on the metal interconnect. A temperature measurement element is patterned and deposited on the substrate; An insulating layer is deposited on the temperature measuring element, the microelectrode array, the temperature control element, and the substrate to obtain a neural microelectrode to be etched, wherein the insulating layer covers the temperature measuring element, the microelectrode array, the temperature control element, and the substrate; The neural microelectrode to be etched is etched from the direction of the insulating layer to obtain the front structure of the neural microelectrode to be etched. The neural microelectrode to be etched is etched from the direction of the substrate to obtain the back structure of the neural microelectrode to be etched.

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