Ion beam forming module for flat glass and ion implantation system and method

Abstract

The application provides an ion beam forming module for flat glass, an ion implantation system and a method, wherein the ion beam forming module for flat glass comprises ion source combination units, ion beam mass and charge ratio analysis magnetic field units, expansion magnet combination units and collimating magnet combination units which are sequentially connected; the ion source combination units comprise a plurality of ion source devices arranged side by side, and the input end of the ion source device is connected with an energy supply and material supply device; the expansion magnet combination units comprise a plurality of groups of expansion magnets, and the position of each group of expansion magnets corresponds to the two sides of the ion beam generated by one ion source device; the collimating magnet combination units are located at the intersection of a plurality of ion beams generated by the plurality of ion source devices after deflection by the ion beam mass and charge ratio analysis magnetic field units. The parallel strip-shaped ion beam obtained by the scheme has a very high effective height, and the beam width of the ion beam is small, the ion density is high and the uniformity is good.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor device manufacturing, and particularly relates to an ion beam forming module for flat glass, and an ion implantation system and method. BACKGROUND

[0002] Ion implantation refers to a process of irradiating an ion beam to a solid material (target piece) and finally stopping on the surface or inside of the solid material. In the current electronic industry, ion implantation has become an important doping technology in semiconductor processes and microelectronic processes. For example, for the thin film transistor array substrate used in liquid crystal display screens, flat glass is needed as a substrate on which ion implantation is performed.

[0003] One of the development trends of the thin film transistor array substrate used in liquid crystal display screens is to use metal oxide thin film transistors such as IGZO (indium gallium zinc oxide) thin films. However, the sheet resistance of a pure IGZO thin film is high, which belongs to the range of semiconductors; after ion implantation (for example, boron ions), the sheet resistance can be greatly reduced to the range of conductors, thereby obtaining a high electron mobility. However, the required ion implantation dose is large, for example, 10 15 / cm 2 In addition, the thin film transistor array substrate using metal oxide technology (flat glass substrate with metal oxide thin film transistors attached to the surface, which is referred to as flat glass or glass substrate for convenience of description in the present application) is generally large, for example, an 8.5 generation glass substrate is a rectangle with a width of 2200 mm and a length of 2500 mm, while the existing ion implanters are much smaller than this area, for example, the ion implanters for silicon wafers generally process circular silicon wafers with a diameter of 310 mm. The height for calculating the beam uniformity is called the effective height, and for the ion beam of a silicon wafer, only the effective height needs to be greater than 310 mm; while for the 8.5 generation glass substrate of the metal oxide thin film transistor process of the liquid crystal display industry, the effective height of the ion beam needs to reach more than 2200 mm, and the ion implantation dose is large and the density distribution is uniform.

[0004] In addition, for organic light emitting diode (OLED) display screens and the like, there is also a problem of ion implantation on glass substrates with oxide thin films attached to the surface.

[0005] The ion current (or the number of ions per unit time) required for ion implantation increases with the increase of the target area. For flat glass, not only an ultra-high effective height is required, but also a sufficient ion current is required, which requires a large number of ions generated by the ion source. Currently, the ion implantation machine can only achieve an effective height of 1500mm for 6.0 generation glass substrate. For larger area target, a required ion implantation machine has not been designed and produced, and therefore, ion implantation for super large area glass substrate has become an important technical problem that hinders the technical development of flat panel display industry and troubles enterprises at home and abroad.

[0006] One of the most important key points of the above problem is that the existing ion beam forming module cannot meet the ion concentration and uniformity requirements, and therefore, a new ion beam forming module is required, and accordingly, an ion implantation system and method suitable for large area flat glass are designed. SUMMARY

[0007] Based on the problems in the prior art, the present application provides an ion beam forming module for flat glass and an ion implantation system and method, which solves the problem that a high effective height, large density and uniform strip-shaped ion beam cannot be obtained at present, provides technical support for super large area flat panel display industry, and can be applied to 8.5 generation glass substrate and other flat glass or other target, and can adjust the area of the ion beam by adjusting the settings of each part according to the use requirements, so as to meet the ion implantation requirements of 4.5 generation (731mm×920mm) to 10.5 generation (2940mm×3370mm) and other larger area glass substrate and other flat glass or other target.

[0008] According to a first aspect of the technical scheme of the present application, the present application provides an ion beam forming module for flat glass, which comprises an ion source combination unit, an ion beam mass and charge ratio analysis magnetic field unit, an expansion magnet combination unit and a collimating magnet combination unit connected in sequence.

[0009] The ion source combination unit is used for generating an ion beam. The ion source combination unit comprises a plurality of ion source devices arranged side by side. The input end of the ion source device is connected with an energy and material supply device, which provides the required voltage, gas and / or vacuum degree for the ion source device.

[0010] The ion beam mass and charge ratio analysis magnetic field unit is used for generating a magnetic field, deflecting the ion beam and screening out impurities in the ion beam.

[0011] The expansion magnet combination unit is used for expanding and stretching the ion beam in the height direction. The expansion magnet combination unit comprises a plurality of groups of expansion magnets. The position of each group of expansion magnets corresponds to the two sides of the ion beam generated by one ion source device.

[0012] The collimating magnet combination unit is used for collimating or parallel stretching of the ion beams, so that the ion beams are parallel to each other in the ion beams; the collimating magnet combination unit is located at the intersection of the ion beams generated by the ion source devices after deflection by the ion beam mass and charge ratio analysis magnetic field unit.

[0013] Further, an ion extraction electrode group is arranged at the output side of the ion source device, and an electrode translation mechanism and a controller are arranged on the ion extraction electrode group, which are used for adjusting the distance between the ion extraction electrode group and the output end of the ion source device.

[0014] In the preferred embodiment, an ion source gate valve is arranged between the ion beam mass and charge ratio analysis magnetic field unit and the expanding magnet combination unit; the gate valve cavity has a shape with gradually increasing height in the cross section along the ion beam travel direction; a valve plate cavity for accommodating a valve plate is sealingly connected to the upper side of the gate valve cavity; a gas cylinder is arranged above the valve plate cavity, and the piston rod of the gas cylinder is connected to the valve plate after penetrating through the top wall of the valve plate cavity.

[0015] In the preferred embodiment, the valve plate is provided with an ion receiving plate on the side facing the ion beam mass and charge ratio analysis magnetic field unit.

[0016] In the preferred embodiment, an expanding baffle is arranged on the side of the expanding magnet extending downstream along the ion beam travel direction.

[0017] In the preferred embodiment, the internal space of the collimating magnet combination unit has a shape with wide ends and a narrow middle part, and a collimating magnet group is arranged at the middle part of the internal space.

[0018] In the preferred embodiment, a beam current detection device is arranged at the rear of the internal space of the collimating magnet combination unit, the working surface of the beam current detection device has a height greater than that of the ion beam, and the beam current detection device is arranged on a mechanical arm for moving the position of the working surface of the beam current detection device to receive the ion beam or move away.

[0019] In the preferred embodiment, a step is arranged on the side of the ion beam forming module, the step is a steel structure support, and the step has an accommodating space below; a ladder is arranged above the step and extends upward along the outer side of the ion beam forming module to the top of the ion beam forming module; a fence is arranged at the edge of the top of the ion beam forming module except for the position adjacent to the ladder; an inspection window which can be opened and sealingly closed is arranged at the top of the ion beam forming module, and an anti-slip tread is arranged around the inspection window.

[0020] According to a second aspect of the present application, the present application provides an ion implantation system for flat glass, characterized in that the ion implantation system comprises an ion beam forming module for flat glass according to the present application, and further comprises an implantation module, a load lock module and an atmospheric transfer module, wherein the ion beam forming module, the implantation module, the load lock module and the atmospheric transfer module are sequentially connected; the implantation module is configured to move the flat glass for scanning to complete ion implantation; the load lock module is configured to load or unload the flat glass; and the atmospheric transfer module is configured to transfer the flat glass in an atmospheric environment.

[0021] According to a third aspect of the present application, the present application provides an ion implantation method for flat glass, which is implemented by using the ion implantation system for flat glass according to the present application, and comprises the following steps:

[0022] The initial state is to ensure that the ion implantation system for flat glass is in a standby state for implementing ion implantation;

[0023] The atmospheric transfer module transfers the flat glass to be implanted with ions to the load lock module;

[0024] The load lock module is vacuumized;

[0025] The implantation module moves the flat glass out of the load lock module and moves in the implantation module, so that the strip-shaped ion beam output by the ion beam forming module scans the flat glass, and the ion implantation of the flat glass is completed;

[0026] The implantation module sends the flat glass implanted with ions back to the load lock module;

[0027] The load lock module is broken vacuum;

[0028] The atmospheric transfer module moves the processed flat glass out of the load lock module;

[0029] The process of generating and outputting the ion beam by the ion beam forming module comprises the following steps:

[0030] The ion source devices in the ion source combination unit ionize the gas to generate ions, and the ions are extracted under the action of an electric field, and a plurality of strip-shaped ion beams are formed;

[0031] The ion beam quality and charge ratio analysis magnetic field unit forms an analysis magnetic field, and each ion beam is deflected at a specific angle under the action of the analysis magnetic field, and only the required specific ions are allowed to deflect along the predetermined route, and the remaining unwanted impurity ions are blocked by moving to the inner side of the ion beam quality and charge ratio analysis magnetic field unit;

[0032] The extended magnet combination unit forms an extended magnetic field, each ion beam correspondingly passes through a set of extended magnets, and under the action of the extended magnetic field, the ion beam is stretched and diverges outward in the height direction, thereby increasing the height of the ion beam;

[0033] The collimating magnet combination unit forms a collimating magnetic field, at the intersection of the ion beams, the ion beams are collimated or parallel stretched under the action of the collimating magnetic field, so that the ion beams are parallel to each other in the direction of travel; thereby forming a required strip-shaped ion beam at the output end of the collimating magnet combination unit.

[0034] Compared with the prior art, the ion beam forming module for flat glass and the ion implantation system and method have the following beneficial technical effects:

[0035] 1. The ion beam forming module for flat glass and the ion implantation system and method of the present application combine multiple ion source devices, analyze the deflection, screening, expansion and collimation of the ion beam mass and charge ratio analysis magnetic field unit, the extended magnet combination unit and the collimating magnet combination unit, and obtain a required parallel strip-shaped ion beam with a very high effective height (for example, more than 2200 mm) and a small beam width, high ion density and good uniformity, thereby meeting the needs of high-dose and uniform ion implantation on a large-area flat glass substrate, providing reliable technical support for the ultra-large-area flat display industry, and making it possible to produce larger-area glass display screens or other semiconductor devices requiring ion implantation processes.

[0036] 2. The ion beam forming module for flat glass and the ion implantation system and method of the present application are provided with an ion extraction electrode group, an electrode translation mechanism and a controller, and can adjust the distance between the ion extraction electrode group and the output end of the ion source device as needed, thereby adjusting the electric field force acting on each part of the ion beam, so that the extracted ion beam obtains the required or maximum flow rate, and provides better ion implantation effect.

[0037] 3. The ion beam forming module for flat glass and the ion implantation system and method of the present application are provided with a special ion source gate valve between the ion beam mass and charge ratio analysis magnetic field unit and the extended magnet combination unit, which is convenient for maintenance and does not greatly increase the volume of the equipment vacuum chamber, and at the same time matches the path of the ion beam and does not hinder the transmission of the ion beam.

[0038] 4. The ion beam forming module for flat glass and the ion implantation system and method of the present application are provided with an ion receiving plate on the valve plate of the ion source gate valve, which provides sealing when the valve plate is closed, receives the ion beam by the ion receiving plate, avoids damage caused by the ion beam directly impacting the valve plate, effectively prolongs the service life, and avoids the possibility of contamination of the ion beam due to ion impact and residence on the valve plate during long-term use.

[0039] 5、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0040] 6、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0041] 7、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0042] 8、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0043] 9、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0044] 10、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0045] 11、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0046] 12、The ion beam forming module for flat glass, ion implantation system and method of the present application is provided with an expansion baffle on the expansion magnet, which is parallel to the expansion magnet, so as to further screen and block the ions which are too divergent in the horizontal direction, and ensure that the travel direction of the output ion beam conforms to the set angle.

[0047] 13、The ion beam forming module for flat glass, ion implantation system and method of the present application use small unit ion source module, so that the ion source module is easy to maintain; compared with prior art, the maintenance man-hours can be reduced by more than 50%.

[0048] 14、The ion beam forming module for flat glass, ion implantation system and method of the present application adopt redundant design of multiple ion sources; even after a single ion source fails, the work of the entire ion implantation machine will not be affected, reducing unplanned downtime. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 is a perspective structural schematic view of the ion beam forming module of a preferred embodiment of the present application.

[0050] Figure 2 is a structural schematic view of the entire ion implantation system for flat glass of a preferred embodiment of the present application.

[0051] Figure 3 is Figure 1 is a front view of the partial structure of the ion beam forming module shown.

[0052] Figure 4 is Figure 3 is a sectional view of the A-A plane in

[0053] Figure 5 is Figure 3 is a perspective sectional view of the structure shown.

[0054] Figure 6 is Figure 1 is a left view of the ion source combination unit in

[0055] Figure 7 is Figure 6 is a sectional view of the B-B plane in

[0056] Figure 8 is Figure 1 is a perspective structural schematic view of the partial structure of the ion beam forming module shown from another angle.

[0057] Figure 9 is a front view of the principle structure of the ion beam forming module of the ion implantation system for flat glass according to the present application.

[0058] Figure 10 is Figure 9 is a top view of the structure shown.

[0059] Figure 11 is a structural schematic view of the implantation module and the load interlock module part in another embodiment of the ion implantation system for flat glass according to the present application.

[0060] Figure 12 is a schematic diagram of the implant module and the load interlock module part of another embodiment of the ion implant system for flat glass according to the present application.

[0061] Figure 13 is a schematic diagram of the vacuum robot arm part.

[0062] Figure 14 is a schematic diagram of the load interlock module part in cooperation with the vacuum robot arm.

[0063] Figure 15 is a schematic diagram of the load interlock module and the atmospheric robot arm in cooperation.

[0064] Figure 16 is a schematic diagram of the atmospheric robot arm.

[0065] The reference signs in the drawings are explained as follows:

[0066] 1. Ion beam forming module; 11. Ion source assembly unit; 111. Ion source device; 112. Ion extraction electrode; 113. Energy and material supply device; 114. Electrode translation mechanism; 115. Electrode fixing frame; 12. Ion beam mass and charge ratio analyzing magnetic field unit; 13. Expander magnet assembly unit; 131. Expander magnet; 132. Expander baffle; 14. Collimating magnet assembly unit; 141. Collimating magnet set; 142. Plasma flow gun; 143. Beam current detection device; 15. Ion source gate valve; 151. Gate valve cavity; 152. Valve plate; 153. Air cylinder; 154. Valve plate cavity; 155. Ion receiving plate; 161. Step; 162. Ladder; 163. Fence; 164. Maintenance window; 165. Anti-slip tread plate;

[0067] 2. Implant module; 21. First vacuum robot arm; 22. Second vacuum robot arm; 23. Beam analyzer; 24. First guide rail; 25. Second guide rail; 211. Electrostatic chuck fixing part; 212. Electrostatic chuck;

[0068] 3. Load interlock module; 31. First load interlock module; 32. Second load interlock module; 311. Inner gate valve; 312. Outer gate valve; 313. Electrostatic chuck table; 314. Table lifting part; 315. Mechanical gripper;

[0069] 4. Atmospheric transfer module; 41. Atmospheric robot arm; 411. Vacuum chuck fixing part; 412. Vacuum chuck; 413. Vacuum suction hole;

[0070] 5. Glass substrate box;

[0071] G. Glass substrate. DETAILED DESCRIPTION

[0072] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the technical solutions, rather than all the embodiments. Based on the embodiments of the technical solutions, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application. In addition, the protection scope of the present application should not be limited to the specific structures or components or specific parameters.

[0073] The drawings are only used for illustrative description, and the representation is a schematic diagram, not a physical diagram, and should not be understood as a limitation on the present application. In order to better illustrate the embodiments of the present application, some components in the drawings are omitted, enlarged or reduced, and do not represent the actual area of the product. It is understandable for those skilled in the art that some well-known structures and their descriptions in the drawings can be omitted.

[0074] In the drawings of the embodiments of the present application, the same or similar reference numerals correspond to the same or similar components; in the description of the present application, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "left", "right", "front", "back" and the like is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, therefore the terms describing the position relationship in the drawings are only used for illustrative description, and should not be understood as a limitation on the present application. For those skilled in the art, the specific meaning of the above terms can be understood according to the specific circumstances.

[0075] The present application provides an ion beam forming module for flat glass, and an ion implantation system and method. The "flat glass" referred to in the present application particularly refers to a target sheet with an area of not less than 20000mm 2 or an integral or large piece of spliced and laid target sheet. Since ion implantation needs to ensure a certain ion implantation density, the required ion current intensity (or the number of ions per unit time) will increase with the increase of the area of the target sheet. For the above-mentioned large-area target sheet, the required ion beam current intensity is extremely high. In the existing structure, only one ion source device is used to form an ion beam, which cannot form the extremely large amount of ions required for large-area flat glass, and therefore the ion implantation effect is poor, which becomes a key problem in the production of large-area display products. In view of this situation, the present application is characterized in that a plurality of ion source devices and corresponding ion extraction electrodes are provided, so as to form a plurality of ion beams, and the plurality of ion beams are combined together through other modules to increase the total ion beam intensity.

[0076] According to a first aspect of the technical scheme, the application provides an ion beam forming module for flat glass, comprising an ion source combination unit, an ion beam mass and charge ratio analysis magnetic field unit, an expansion magnet combination unit and a collimating magnet combination unit connected in sequence.

[0077] The ion source combination unit is used for generating an ion beam; the ion source combination unit comprises a plurality of ion source devices arranged side by side, and an energy and material supply device is connected to the input end of the ion source device to provide the ion source device with required voltage, gas and / or vacuum degree.

[0078] The ion beam mass and charge ratio analysis magnetic field unit is used for generating a magnetic field, deflecting the ion beam and screening out impurities in the ion beam.

[0079] The expansion magnet combination unit is used for expanding and stretching the ion beam in the height direction; the expansion magnet combination unit comprises a plurality of expansion magnets, and the position of each expansion magnet corresponds to the two sides of the ion beam generated by one ion source device.

[0080] The collimating magnet combination unit is used for collimating or parallelly stretching the ion beam so that the travel directions of the ions in the ion beam are parallel to each other; the collimating magnet combination unit is located at the intersection of a plurality of ion beams generated by a plurality of ion source devices after being deflected by the ion beam mass and charge ratio analysis magnetic field unit.

[0081] Further, an ion extraction electrode group is arranged on the output side of the ion source device, and an electrode translation mechanism and a controller are arranged on the ion extraction electrode group to adjust the distance between the ion extraction electrode group and the output end of the ion source device.

[0082] In a preferred embodiment, an ion source gate valve is arranged between the ion beam mass and charge ratio analysis magnetic field unit and the expansion magnet combination unit; the gate valve cavity has a shape with gradually increasing cross-sectional height along the travel direction of the ion beam; a valve plate cavity for accommodating a valve plate is sealingly connected to the upper side of the gate valve cavity; a gas cylinder is arranged above the valve plate cavity, and the piston rod of the gas cylinder is connected to the valve plate after penetrating through the top wall of the valve plate cavity.

[0083] In a preferred embodiment, an ion receiving plate is arranged on the side of the valve plate facing the ion beam mass and charge ratio analysis magnetic field unit.

[0084] In a preferred embodiment, an expansion baffle is arranged on the side of the expansion magnet extending downstream along the travel direction of the ion beam.

[0085] In a preferred embodiment, the internal space of the collimating magnet combination unit has a shape with wide ends and a narrow middle, and a collimating magnet group is arranged at the middle position, and the collimating magnet group is located on both sides of the ion beam.

[0086] In the preferred embodiment, a beam current detection device is arranged at the rear of the inner space of the collimating magnet combination unit, the working surface of the beam current detection device has a height greater than the ion beam, and the beam current detection device is arranged on a mechanical arm for moving the position of the working surface of the beam current detection device to receive the ion beam or move away.

[0087] In the preferred embodiment, a step is arranged on the side of the ion beam forming module, the step is a steel structure support, and the step has a containing space below; a ladder is arranged above the step and extends upwards along the outer side of the ion beam forming module to the top of the ion beam forming module; a fence is arranged at the edge of the top of the ion beam forming module except for a position adjacent to the ladder; an inspection window that can be opened and sealed closed is arranged at the top of the ion beam forming module, and an anti-skid tread plate is arranged around the inspection window.

[0088] According to the second aspect of the technical scheme of the present application, the present application provides an ion implantation system for flat glass, characterized in that the ion implantation system for flat glass comprises an ion beam forming module of the present application, an implantation module, a load interlocking module and an atmospheric transfer module, and the ion beam forming module, the implantation module, the load interlocking module and the atmospheric transfer module are sequentially connected; the implantation module is used for scanning and moving the flat glass to complete ion implantation; the load interlocking module is used for uploading or downloading the flat glass; and the atmospheric transfer module is used for transferring the flat glass in an atmospheric environment.

[0089] According to the third aspect of the technical scheme of the present application, the present application provides an ion implantation method for flat glass, which is implemented by using an ion implantation system for flat glass of the present application, and comprises the following steps:

[0090] The initial state is to ensure that the ion implantation system for flat glass is in a standby state for implementing ion implantation;

[0091] The atmospheric transfer module transfers the flat glass to be implanted with ions to the load interlocking module;

[0092] The load interlocking module performs vacuum pumping;

[0093] The implantation module moves the flat glass out of the load interlocking module and moves the flat glass in the implantation module, so that the strip-shaped ion beam output by the ion beam forming module scans the flat glass, and the ion implantation of the flat glass is completed;

[0094] The implantation module sends the flat glass implanted with ions back to the load interlocking module;

[0095] The load interlocking module performs vacuum breaking;

[0096] The atmospheric transfer module moves the processed flat glass out of the load interlocking module;

[0097] The process of generating and outputting the ion beam by the ion beam forming module comprises the following steps:

[0098] The ion source devices of the ion source combination unit ionize the gas to generate ions, and the ions are extracted under the action of an electric field, and a plurality of strip-shaped ion beams are formed;

[0099] The ion beam mass and charge ratio analysis magnetic field unit forms an analysis magnetic field, each ion beam is deflected at a specific angle under the action of the analysis magnetic field, and only the required specific ions are allowed to deflect along the predetermined route, and the rest of the unwanted impurity ions move to the inner side of the ion beam mass and charge ratio analysis magnetic field unit and are blocked;

[0100] The expansion magnet combination unit forms an expansion magnetic field, each ion beam correspondingly passes through a group of expansion magnets, and under the action of the expansion magnetic field, the ion beam is stretched and diverged in the height direction, thereby increasing the height of the ion beam;

[0101] The collimating magnet combination unit forms a collimating magnetic field, at the intersection of the plurality of ion beams, the ion beams are collimated or parallelly stretched under the action of the collimating magnetic field, so that the travel directions of the ions in the ion beams are parallel to each other; thereby forming a required strip-shaped ion beam at the output end of the collimating magnet combination unit.

[0102] The detailed structure of the ion implantation system for flat glass will be described below with reference to the accompanying drawings. Among them, the flat glass takes the display screen thin film transistor array substrate (glass substrate G) as an example, and more specifically, takes the case of 8.5 generation glass substrate (rectangular with a width of 2200 mm and a length of 2500 mm) and scanning along the length direction during implantation as an example for description.

[0103] First, please refer to Figure 2The ion implantation system for flat glass comprises an ion beam forming module 1, an implantation module 2, a loading interlocking module 3 and an atmospheric transmission module 4. The ion beam forming module 1, the implantation module 2, the loading interlocking module 3 and the atmospheric transmission module 4 are sequentially connected, that is, the ion beam forming module 1 is connected to the implantation module 2, the implantation module 2 is connected to the loading interlocking module 3, and the loading interlocking module 3 is connected to the atmospheric transmission module 4. The ion beam forming module 1 is used for forming an ion beam with a certain specification, and the ion beam with the certain specification has ion species, ion concentration (density) and ion beam height required for vacuum ion implantation. The implantation module 2 is used for completing ion implantation on the glass substrate G. The loading interlocking module 3 is used for uploading or downloading the glass substrate G, and switching the environment of the glass substrate G to the vacuum environment connected to the implantation module 2 or the normal pressure environment connected to the atmospheric transmission module 4, so as to assist in completing the ion implantation of the glass substrate G in the implantation module 2. The atmospheric transmission module 4 is used for transmitting the glass substrate G in the normal pressure environment, and the glass substrate G is taken out or put back from the glass substrate box 5 by the atmospheric mechanical arm 41.

[0104] Wherein, please refer to Figures 1 to 8 The ion beam forming module 1 mainly comprises an ion source combination unit 11, an ion beam mass and charge ratio analysis magnetic field unit 12, an expansion magnet combination unit 13 and a collimating magnet combination unit 14. The ion source combination unit 11, the ion beam mass and charge ratio analysis magnetic field unit 12, the expansion magnet combination unit 13 and the collimating magnet combination unit 14 are sequentially connected, that is, the ion source combination unit 11 is connected to the ion beam mass and charge ratio analysis magnetic field unit 12, the ion beam mass and charge ratio analysis magnetic field unit 12 is connected to the expansion magnet combination unit 13, and the expansion magnet combination unit 13 is connected to the collimating magnet combination unit 14. The ion source combination unit 11, the ion beam mass and charge ratio analysis magnetic field unit 12, the expansion magnet combination unit 13 and the collimating magnet combination unit all have a cavity structure (or a shell structure), and the cavity structures are sequentially connected to form a vacuum cavity in communication in the ion beam forming module 1. Preferably, according to needs, a door valve can be arranged at the joint of one or more adjacent units, which can be controlled to be opened or closed, so that a certain section of the ion beam forming module 1 is sealed and separated from other parts, thereby facilitating maintenance and the like.

[0105] The ion source combination unit 11 is used for generating an ion beam. Please refer to Figures 4 to 7The ion source assembly unit 11 comprises an ion source assembly unit cavity, and a plurality of ion source installation holes are arranged side by side on the ion source assembly unit cavity, and a plurality of ion source devices 111 are correspondingly installed in the ion source installation holes. The ion source device 111 is used for ionizing gas to generate ions. In the structure of one ion source assembly unit 11 in the embodiment, three ion source devices 111 are arranged side by side, and the ion source device 111 is preferably an indirect heating cathode ion source (referred to as IHC ion source). The ion source device 111 comprises an ion source cavity with an extraction slit and the like. Please refer to Figure 1 The input end of the ion source device 111 is further connected with a power supply and feeding device 113 outside the ion source assembly unit cavity, which is used for providing the ion source device 111 with required voltage, gas and / or vacuum degree and the like. Inside the ion source assembly unit cavity, an ion extraction electrode group is arranged on the side of the ion source device 111 facing the ion beam mass and charge ratio analysis magnetic field unit 12 (i.e. the side of the output ion beam), and the ion extraction electrode group comprises a plurality of ion extraction electrodes 112 (also referred to as ion beam current divergence extraction lens) arranged side by side, which is used for providing an extraction electric field to extract ions to form an ion beam. For example, one ion extraction electrode 112 is arranged outside the extraction slit of the ion source cavity of each ion source device 111.

[0106] Please refer to Figure 7In a preferred embodiment, an electrode translation mechanism 114 and a controller are provided on each ion extraction electrode 112 to control the relative position of the ion extraction electrode 112 and the ion source device 111, or a plurality of ion extraction electrodes 112 are simultaneously controlled by one electrode translation mechanism 114 and one controller to adjust the ion extraction electrode 112 to an appropriate position so that the ion beam extracted from the extraction slit under the action of the electric field of the ion extraction electrode 112 obtains the maximum current. For example, the upper part of the ion source assembly unit cavity has a slot for the ion extraction electrode 112 connecting part to pass through, the electrode fixing frame 115 and the wire of the ion extraction electrode 112 are arranged upwardly from the main body of the ion extraction electrode 112 (the part for forming the required electric field), the electrode fixing frame 115 and the wire pass through the slot and are connected with the electrode translation mechanism 114, the electrode translation mechanism 114 is connected with the controller, and the wire is connected with an adjustable power supply. An extraction electrode housing is provided outside the electrode translation mechanism 114, the extraction electrode housing is sealingly connected with the ion source assembly unit cavity at the upper slot, thereby forming a sealed chamber inside. In an embodiment, the electrode translation mechanism 114 is a linear module with a matching controller. In another embodiment, the electrode translation mechanism 114 is a screw rod, the screw rod is arranged horizontally, the screw rod is rotationally connected with screw rod connecting seats located on both sides inside the extraction electrode housing, the controller is a servo motor, the output end of the servo motor is in transmission connection with the screw rod, the upper end of the electrode fixing frame 115 of the ion extraction electrode 112 has a through screw hole, which is sleeved on the screw rod and is threadedly connected with the screw rod in a matched manner, and the electrode fixing frame 115 of the ion extraction electrode 112 is slidingly connected with the extraction electrode housing and / or the ion source assembly unit cavity at the middle section, for example, the electrode fixing frame 115 has a sliding block, and a sliding rail is installed above the ion source assembly unit cavity, the sliding rail is arranged horizontally and located on one side or both sides of the electrode fixing frame 115, and the sliding rail is connected with the sliding block in a matched manner. During operation, the servo motor drives the screw rod to rotate, under the limiting action of the threaded connection and the sliding block and the sliding rail, the electrode fixing frame 115 of the ion extraction electrode 112 moves back and forth along the length direction of the screw rod (parallel to the ion beam extraction direction) with the rotation of the screw rod, thereby adjusting the distance between the ion extraction electrode 112 and the output end of the ion source cavity of the ion source device 111 with extremely high precision, and further adjusting the electric field condition of the ion beam and the electric field force acting on each position in the ion beam.

[0107] The ion beam mass and charge ratio analysis magnetic field unit 12 is used to generate a magnetic field, deflect the ion beam, and screen out impurities in the ion beam to obtain a relatively pure ion beam of the desired ions. The ion beam mass and charge ratio analysis magnetic field unit 12 is arranged along the direction of travel of the ion beam after the ion extraction electrode 112. The ion beam mass and charge ratio analysis magnetic field unit 12 has an analysis magnetic field unit cavity, and has upper and lower working ends that sealingly pass through the analysis magnetic field unit cavity and oppositely located within the analysis magnetic field unit cavity. The working ends of the ion beam mass and charge ratio analysis magnetic field unit 12 are generally rectangular prismatic in cross section when laid horizontally, and have flanges at the outer upper and lower ends, respectively, and are sealingly connected to the outer side of the analysis magnetic field unit cavity by a sealing ring. The opposite sides of the two working ends of the ion beam mass and charge ratio analysis magnetic field unit 12 are both inclined, and the distance between them gradually increases in the direction of travel of the ion beam. A magnetic field generating unit, such as an electromagnet structure, is arranged on the outside of the working ends, thereby forming a desired analysis magnetic field between the two working ends. The analysis magnetic field has a specific field strength and shape distribution, and only allows the specific ions to be deflected along a predetermined path, while the remaining unwanted impurity ions are moved to the inner side of the ion beam mass and charge ratio analysis magnetic field unit 12 and are blocked.

[0108] Figure 7In the shown embodiment, the analysis magnetic field unit cavity of the ion beam mass and charge ratio analysis magnetic field unit 12 and the ion source combination unit cavity of the ion source combination unit 11 are integrated into one structure, which is more compact and has better sealing performance. The analysis magnetic field unit cavity is connected to the expanding magnet combination unit 13 through an ion source gate valve 15 at the end along the ion beam travel direction. The ion source gate valve 15 is used to close and isolate the cavities on both sides when needed, facilitating maintenance and repair. A preferred ion source gate valve 15 mainly includes a gate valve cavity 151, a valve plate 152, and a gas cylinder 153. The gate valve cavity 151 is generally flat and columnar (annular) in shape, matches and is sealingly connected to the analysis magnetic field unit cavity, for example, the input end of the gate valve cavity 151 is embedded in the inside of the output end of the analysis magnetic field unit cavity. The shape of the gate valve cavity 151 gradually increases (increases in height) along the cross section in the ion beam travel direction, so as to match the shape of the ion beam and not block the divergence and transmission of the ion beam. A flat valve plate cavity 154 is sealingly connected above the gate valve cavity 151, and the valve plate cavity 154 is used to accommodate the valve plate 152 when the ion source gate valve 15 is open. The gas cylinder 153 is arranged above the valve plate cavity 154, and the piston rod end of the gas cylinder 153 is downwardly connected to the valve plate 152 after passing through the top wall of the valve plate cavity 154. Preferably, the valve plate 152 is slidingly connected to the inner wall of the valve plate cavity 154 on at least one side through a sliding block and sliding rail assembly, so as to be limited and ensure smooth movement of the valve plate 152 without being stuck. When the ion source gate valve 15 is closed, the piston rod of the gas cylinder 153 is controlled to extend downwardly, and the valve plate 152 closes and blocks the valve plate cavity 154. The lower part of the valve plate cavity 154 has a groove and a bottom pad, which can play a role in preventing collision and sealing. Preferably, the valve plate 152 is provided with an ion receiving plate 155 on one side facing the ion beam mass and charge ratio analysis magnetic field unit 12, for example, made of graphite, which is used to receive the ion beam when the valve plate 152 moves downwardly and is in a closed state, so as to avoid damage caused by direct impact of the ion beam on the valve plate 152.

[0109] The expanding magnet combination unit 13 is used to expand and stretch the ion beam in the height direction, so as to increase the height of the ion beam. The expanding magnet combination unit 13 is connected after the ion beam mass and charge ratio analysis magnetic field unit 12 (and the ion source gate valve 15). The expanding magnet combination unit 13 includes an expanding magnet cavity, which is preferably prismatic with a generally trapezoidal bottom surface. A plurality of groups of expanding magnets 131 are preferably arranged side by side in the expanding magnet cavity. The number of groups of expanding magnets 131 is the same as the number of ion source devices 111, and the position of each group of expanding magnets 131 corresponds to the two sides of the ion beam generated by one ion source device 111, respectively. From the bottom to the top of the expanding magnet cavity, the height of the expanding magnet cavity gradually increases, so as to match the shape of the ion beam and not block the divergence and transmission of the ion beam. Figure 4Each group of expansion magnets 131 only passes one (group) of ion beams which travels substantially in the same direction from the perspective of the top view. The expansion magnets 131 are, for example, electromagnets, and each group of expansion magnets 131 includes two oppositely arranged electromagnets which are substantially parallel (optionally with a small angle of inclination at the rear end, close to each other). Preferably, an expansion baffle 132 is also arranged downstream of the expansion magnets 131 in the direction of travel of the ion beams, and the expansion baffle 132 is parallel to the expansion magnets 131, further filters and blocks the ions which are too divergent in the horizontal direction, so as to ensure that the output ion beams travel in the set angle. The angles of the directions of the plurality of groups of expansion magnets 131 (i.e. the directions of travel of the ion beams generated by the plurality of ion source devices 111) are relatively small (for example, preferably spaced by 3-5 degrees), and meet at a point far away. The side of the expansion magnet cavity is provided with a pipe opening, which can be used for vacuum pumping and / or maintenance, etc. The length of the expansion magnet cavity is relatively long, and can be assembled by three shell bodies. Based on the horizontal travel routes of the plurality of ion beams in the expansion magnet cavity, the three shell bodies can be selected to have a width which decreases in sequence and a height which increases in sequence along the direction of travel of the ion beams, so as not to hinder the travel of the ion beams, while reducing the volume of the cavity as much as possible, which helps to reduce the production cost and improve the production efficiency.

[0110] The collimating magnet assembly unit 14 is used for collimating or parallel stretching of the ion beams, so that the directions of travel of the ions in the ion beams are all parallel to each other. The collimating magnet assembly unit 14 includes a collimating magnet cavity in which a collimating magnet group 141 is fixedly arranged. The shape of the collimating magnet cavity is preferably a substantially cuboid, and the internal cavity thereof is preferably substantially in the shape of a sandglass, i.e. wider at both ends and narrower in the middle, and gradually narrows from both ends to the middle, which matches the path of the ion beams, and helps to reduce the volume of the vacuum cavity, reduce the cost of the equipment, improve the process efficiency, and reduce the width of the obtained strip-shaped ion beams. The neck part in the middle corresponds to the working end of the collimating magnet group 141. The side of the collimating magnet cavity is provided with a mounting hole for sealingly mounting the collimating magnet group 141. The side of the collimating magnet cavity is provided with a pipe opening, which can be used for vacuum pumping and / or maintenance, etc. The collimating magnet group 141 is located on both sides of the intersection of the plurality of ion beams generated by the plurality of ion source devices 111 after being deflected by the ion beam mass and charge ratio analysis magnetic field unit 12. Preferably, a plasma flow gun 142 (PFG) is also arranged behind the collimating magnet cavity, which functions to remove the charging effect on the glass substrate G, so as to eliminate the risk of electrostatic discharge. Preferably, a beam current detection device 143, for example, a Faraday device, is also arranged behind the collimating magnet cavity, and the beam current detection device 143 is preferably connected to the collimating magnet cavity through a mechanical arm. The working surface of the beam current detection device 143 has a height greater than that of the ion beam, and is controlled to move by the mechanical arm to receive (completely block) the ion beam, or to move away to allow the ion beam to continue to travel.

[0111] The ion source assembly unit cavity, the analysis magnetic field unit cavity, the expansion magnet cavity and the collimating magnet cavity form a sealed and vacuumable chamber in sealed communication, and at least one of them is provided with a vacuum device such as a vacuum pump and a vacuum gauge. The rear end of the collimating magnet cavity has a through hole, which is sealingly connected with the implant module 2 to form an integrated sealed vacuum chamber, and the qualified ion beam passes through the through hole into the implant module 2 for ion implantation process.

[0112] In the preferred embodiment, a door valve that can be controlled to open and sealingly closed is preferably arranged between the collimating magnet cavity and the implant module 2, so as to facilitate maintenance and repair, and to avoid unqualified ion beams entering the implant module 2. For example, before ion implantation, the door valve in front of the implant module 2 is in a closed state, and the beam detection device 143 is located in front of the door valve to receive the ion beam for detection, and the detection result is transmitted to the computer device for manual or automatic identification and inspection. If the inspection is qualified, the door valve is opened, the beam detection device 143 is moved away, and the qualified ion beam enters the implant module 2 for ion implantation. At the same time, the implant module 2 is also provided with a beam analyzer 23 to detect the ion beam before / during / after ion implantation, so as to ensure that any unqualified ion beam can be found in time, and the process quality and uniformity of ion implantation are ensured. If the beam detection device 143 detects that the ion beam is unqualified, the settings of the ion source assembly unit 11, the ion beam mass and charge ratio analysis magnetic field unit 12, the expansion magnet assembly unit 13 and / or the collimating magnet assembly unit 14 can be adjusted manually or automatically by the system, such as adjusting the magnetic field strength, adjusting the position of the ion extraction electrode 112, etc.

[0113] The working process and principle of the ion beam forming module 1 of the present application are as follows. Please refer to Figure 9 、 Figure 10In the ion implantation system for flat glass, the ion source assembly unit 11 has a plurality of ion source devices 111 arranged side by side, and plasma is formed in each of the ion source devices 111; the plasma formed is extracted from the extraction slit of the ion source device 111 under the action of the electric field force of the ion extraction electrode 112, and an ion beam with a strip-shaped longitudinal section is formed; the ion beam formed moves into the ion beam mass and charge ratio analysis magnetic field unit 12, so that the ion beam is deflected under the action of the Lorentz force, only specific ions can pass through the ion beam mass and charge ratio analysis magnetic field unit 12, and the rest of the impurity ions or stray ions will be blocked by the inner side wall of the ion beam mass and charge ratio analysis magnetic field unit 12 due to the too large or too small Lorentz force, so that the ion beam mass and charge ratio analysis magnetic field unit 12 has the function of screening ions, and a pure ion beam of the required ions is obtained at the output end of the ion beam mass and charge ratio analysis magnetic field unit 12; the ion beam mass and charge ratio analysis magnetic field unit 12 converges a plurality of ion beams to a position far away from it, i.e. the position of the collimating magnet assembly unit 14; the plurality of ion beams pass through the expanding magnet assembly unit 13 in the process of moving, the expanding magnet 131 stretches the ion beam, and the quadrupole magnetic field formed by the expanding magnet 131 makes the ion beam as a whole gradually diverge along the height direction of the ion beam; when the ion beam moves to the collimating magnet assembly unit 14, the height of the ion beam is the required height, and the required height is greater than or equal to the width of the glass substrate G; at the converging position of the plurality of ion beams, the collimating magnet assembly unit 14 collimates the ion beam, and the magnetic field formed by the collimating magnet assembly unit 14 makes the moving direction of each ion in the ion beam deflect to be parallel to each other.

[0114] It should be noted that, since the position where the plurality of ion beams converge is located far away, the included angle between the two ion beams located at the positions on both sides can also be controlled within a small range, so that the ion beam has better straightness, the beam width is smaller, and the ion density is larger.

[0115] In the preferred embodiment, please refer to Figure 8On the side of the ion beam forming module 1, there are also a step 161 and a ladder 162. The step 161 is in the form of a steel structure support, and has a space below to accommodate electrical equipment and the like. The ladder 162 is above the step 161, and extends upward along the outer side of the ion beam forming module 1 to the top of the ion beam forming module 1. The ladder 162 has a guardrail around it, forming a tubular ladder. On the top edge of the ion beam forming module 1, except for the position adjacent to the ladder 162, there is a fence 163 to prevent people from falling. On the top of the ion beam forming module 1, there is also an inspection window 164 that can be opened and sealed closed, such as an inspection window 164 that is opened to communicate with the analysis magnetic field unit cavity. There can also be an inspection window on the collimating magnet cavity. In the surrounding area of the inspection window, there is an anti-slip tread plate 165, such as a grid, to increase friction and provide sufficient support for maintenance personnel to stand and walk on it, and the like. Anti-slip tread plates 165 can also be provided as needed at other locations such as the step 161.

[0116] The implantation module 2 is used for ion implantation of flat glass, which is repeatedly moved and scanned therein. Please refer to Figure 11 The implantation module 2 is connected to the downstream side of the ion beam travel direction of the ion beam forming module 1, and includes an implantation cavity, which is generally cuboid. Inside the implantation cavity, there is a vacuum mechanical arm, which functions to hold and move the glass substrate G, thereby performing a scanning action relative to the fixed ion beam to achieve the ion implantation process of the glass substrate G. The vacuum mechanical arm includes a transmission mechanism and a holding mechanism for holding the glass substrate G. The implantation module 2 also includes a beam analyzer 23, which functions to display the beam current density and shape of the ion beam in real time, thereby controlling the implantation dose according to the detected data. For example, in the embodiment shown in Figure 10 The beam analyzer 23 is fixedly arranged on the side of the implantation cavity opposite to the ion beam forming module 1, and the ion beam directly enters the beam analyzer 23 before the implantation starts, thereby achieving monitoring.

[0117] In an embodiment, as shown in Figure 11 The holding mechanism on the first vacuum mechanical arm 21 is realized by, for example, an electrostatic chuck for electrostatic adsorption, or other mechanical structures, and the like. The first vacuum mechanical arm 21 can translate in a direction perpendicular to the ion beam travel direction and in a direction parallel to the ion beam travel direction, so that the vacuum mechanical arm 21 can move left and right to scan, and move forward and backward to extend into different positions of the loading interlock module 3 to take and place the glass substrate G.

[0118] In a preferred embodiment, as shown in Figure 12As shown, the implant cavity inside bottom of the implant module 2 is provided with a first guide rail 24 and a second guide rail 25 arranged side by side, both of which are arranged along a direction perpendicular to the ion beam (i.e. the moving direction of the glass substrate G during scanning implantation), and a first vacuum mechanical arm 21 and a second vacuum mechanical arm 22 are respectively slidably connected on the first guide rail 24 and the second guide rail 25, and the first vacuum mechanical arm 21 and the second vacuum mechanical arm 22 can independently move relative to each other. For example, the first vacuum mechanical arm 21 is taken as an example, the lower end of the electrostatic chucking arm fixing part 211 is provided with a sliding block structure, and the first guide rail 24 is provided with a corresponding sliding groove, and the two are matched and slidably connected.

[0119] The first vacuum mechanical arm 21 and the second vacuum mechanical arm 22 adopt the same structure, as shown in Figure 13 As shown, the first vacuum mechanical arm 21 and the second vacuum mechanical arm 22 each independently include an electrostatic chucking arm fixing part 211 and an electrostatic chucking arm 212 (for the sake of simplicity of illustration, only one set of electrostatic chucking arm fixing part 211 and electrostatic chucking arm 212 is shown in the figure), and the electrostatic chucking arm fixing part 211 is slidably connected with the guide rail where it is located through, for example, a matched sliding block structure, and the electrostatic chucking arm fixing part 211 is connected with a driving device to control its movement on the guide rail. The electrostatic chucking arm fixing part 211 is provided with a plurality of electrostatic chucking arms 212 (preferably four electrostatic chucking arms) arranged along a direction perpendicular to the ion beam, and the plurality of electrostatic chucking arms 212 are parallel to each other and have a spacing. The electrostatic chucking arm 212 realizes the holding of the glass substrate through electrostatic chucking, and its structure includes, for example, a plate-shaped bottom plate, the bottom plate is provided with a first thin film layer, the first thin film layer is provided with at least two groups of electrode arrays. An insulating adhesive filling layer is further provided between the plurality of electrode arrays on the first thin film layer and the upper surface of the electrode array, and a second thin film layer is fixed on the adhesive filling layer. The insulating adhesive filling layer fills the gap between the electrode arrays, and is used to adhesively fix the first thin film layer, the second thin film layer and the electrode arrays together. The first thin film layer and the second thin film layer are both dielectric films, which are preferably films of high molecular materials, and ceramic thin films can also be used. The two ends of the electrode array are connected with an external power supply. Its working principle is that the external power supply applies a set voltage to the electrode array to make the electrode array charged, and then according to the principle of electrostatic induction, the glass substrate G close to the electrostatic chucking arm 212 generates an induced electric dipole and an electric field, so that the glass substrate G is firmly attracted to the electrostatic chucking arm 212 due to the attraction of the positive and negative electric dipoles; when the external power supply is turned off, the adsorption effect disappears.

[0120] Preferably as Figure 13As shown, the beam current analyzer 23 is fixedly arranged on one side of the electrostatic chucking arm fixing portion 211 of the ion beam forming module 1, so as to monitor the ion beam while the vacuum mechanical arm moves to the loading interlocking module 3. According to the design requirement, the length of the beam current analyzer 23 is greater than the effective height of the ion beam, and the effective height of the ion beam is not less than the width of the glass substrate G. Therefore, the lower end of the electrostatic chucking arm fixing portion 211 for fixedly mounting the beam current analyzer 23 also needs to be lower than the lower end of the glass substrate G; the position of the ion beam forming module 1, the position of the first guide rail 24, the position of the second guide rail 25, and the position where the beam current analyzer 23 is fixed are all matched, so as to ensure that the beam current analyzer 23 can completely receive the ion beam.

[0121] The loading interlocking module 3 is used to realize the conversion of the glass substrate G between the vacuum environment and the atmospheric environment, and to carry the glass substrate G to be implanted or the glass substrate G after implantation. As shown in Figure 11 , Figure 12 As shown, the loading interlocking module 3 is arranged on one side of the implantation module 2, corresponding to the moving direction of the vacuum mechanical arm of the implantation module 2, and located in the moving range of the vacuum mechanical arm. The loading interlocking module 3 includes a loading interlocking cavity which can be sealed and vacuumized, and is connected with a vacuumizing device such as a vacuum pump and a vacuum gauge. An inner side door valve 311 which can be controlled to open and close is arranged between the loading interlocking cavity and the implantation cavity of the implantation module 2. The other side of the cavity of the loading interlocking module 3 is connected with the atmospheric transmission module 4, and an outer side door valve 312 which can be controlled to open and close is arranged between the cavity of the loading interlocking module 3 and the atmospheric transmission module 4.

[0122] In the preferred embodiment, as shown in Figure 11 and Figure 12 The loading interlocking module 3 includes a first loading interlocking module 31 and a second loading interlocking module 32, both of which have the same structure and include the inner side door valve 311 and the outer side door valve 312. The positions of the first loading interlocking module 31 and the second loading interlocking module 32 correspond to the first guide rail 24 and the second guide rail 25 respectively, so that the first vacuum mechanical arm 21 can move into the first loading interlocking module 31, and the second vacuum mechanical arm 22 can move into the second loading interlocking module 32. The first loading interlocking module 31 and the second loading interlocking module 32 each include an electrostatic chucking stage 313, a stage lifting portion 314, and a mechanical gripper 315.

[0123] As shown in Figure 14As shown, the carrier lifting part 314 is for example a large flat lifting platform, which can be configured with existing lifting mechanism, such as piston telescopic or scissor lifting mechanism, etc. One side of the carrier lifting part 314 is fixedly connected with the wall of the loading interlocking cavity, and the other side is fixedly provided with the electrostatic adsorption carrier 313 and the mechanical gripper 315, so that the electrostatic adsorption carrier 313 and the mechanical gripper 315 can be raised or lowered together relative to the inner wall behind the loading interlocking module.

[0124] The electrostatic adsorption carrier 313 is in a plurality of strip structures, the width, number and position distribution of which are matched with the intervals between the plurality of electrostatic adsorption arms 212. For example, the electrostatic adsorption arms 212 are four, and there are three intervals in the middle. The electrostatic adsorption carrier 313 is also three, and is correspondingly located at the intervals between the four electrostatic adsorption arms 212, and the width of the electrostatic adsorption carrier 313 is not greater than the corresponding interval. The electrostatic adsorption carrier 313 realizes the holding of the glass substrate through electrostatic adsorption. The structure thereof is for example, including a plate-shaped bottom plate, a first film layer is arranged on the bottom plate, and at least two groups of electrode arrays are arranged on the first film layer. An adhesive filling layer is arranged between the plurality of groups of electrode arrays on the first film layer and the upper surface of the electrode array. A second film layer is fixed on the adhesive filling layer. The adhesive filling layer fills the gap between the electrode arrays, and is used for bonding and fixing the first film layer, the second film layer and the electrode arrays together. The first film layer and the second film layer are both dielectric films, and the dielectric film is preferably a high polymer material film. A ceramic dielectric film can also be used. The two ends of the electrode array are connected with an external power supply. The working principle is that the external power supply applies a set voltage to the electrode array, so that the electrode array is charged, and then according to the principle of electrostatic induction, the glass substrate G close to the second film layer of the electrostatic adsorption carrier 313 generates an induced electric dipole and an electric field, so that the glass substrate G is firmly adsorbed on the electrostatic adsorption carrier 313 due to the attraction of the positive and negative electric dipoles; when the external power supply is turned off, the adsorption effect disappears.

[0125] The mechanical gripper 315 is preferably two oppositely arranged mechanical grippers, which are respectively located above the uppermost electrostatic adsorption carrier 313 and below the lowermost electrostatic adsorption carrier 313, and are both separated from the adjacent electrostatic adsorption carrier 313 by a distance of at least the width of one electrostatic adsorption arm 212. The two mechanical grippers 315 are the same in structure, which can be configured with existing technology, such as Figure 14The mechanical gripper 315 is shown with one end as a gripper connecting part and the other end as a gripper holding part. The gripper connecting part is fixedly connected with the stage lifting part 314, and the gripper holding part is used to hold the glass substrate G. The distance between the gripper holding parts of the two mechanical grippers 315 matches the width of the glass substrate G. The gripper holding part includes two grippers that are controlled to move relative to each other. Preferably, both grippers are in the shape of a board strip, and the length of the board strip matches the length of the glass substrate G, so that the glass substrate G can be held more stably. It is conceivable that, for example, a plurality of smaller mechanical grippers are arranged side by side to hold the glass substrate G together, and the specific structure and arrangement mode that can assist in holding and fixing the glass substrate G can be used.

[0126] It should be noted that in the present application, the thickness of the glass substrate G is very thin, about 0.5mm to 1.0mm. In order to stably hold the glass substrate G on the vacuum mechanical arm and the atmospheric mechanical arm 41, the edge of the glass substrate G needs to be close to the edge of the mechanical arm. However, after the glass substrate G is delivered to the loading interlocking module 3 by the mechanical arm, the part of the loading interlocking module 3 that holds the glass substrate G also needs to be close to the edge of the glass substrate G. Therefore, in the loading interlocking module 3 of the preferred embodiment, the glass substrate G is mainly held by the electrostatic adsorption stage 313 with a large contact area, and the mechanical gripper 315 provides auxiliary fixing for the edge of the glass substrate G. The two work together to stably hold the glass substrate G in the loading interlocking module 3, and the glass substrate G will not be bent, broken or displaced due to the disturbance of the gas during the pumping and charging process of the vacuum state.

[0127] The atmospheric transmission module 4 is used to transport the flat glass before and after implantation in an atmospheric environment. The atmospheric transmission module 4 is sealingly connected with one end of the loading interlocking module 3. Please refer to Figures 14 to 16 The atmospheric transmission module 4 has a placing part, for example, one or more placing tables, which is used to fixedly place the glass substrate box 5. The atmospheric transmission module 4 has at least one atmospheric mechanical arm 41, which is used to grab the glass substrate G and deliver the glass substrate G between the glass substrate box 5 and the loading interlocking module 3. The atmospheric transmission module 4 is provided with a track, and the atmospheric mechanical arm 41 and the track are movably connected through a controllable telescopic structure, so that the atmospheric mechanical arm 41 can move longitudinally along the track, and extend in a direction perpendicular to the track into the glass substrate box 5 or the loading interlocking module 3.

[0128] Please refer to Figure 15 , Figure 16The transmission part of the atmospheric mechanical arm 41 is preferably a multi-axis mechanical arm; more preferably a six-axis mechanical arm structure, which has six degrees of freedom and can meet the use requirements of conveying and overturning the glass substrate G. The end of the six-axis mechanical arm structure is fixedly connected with a vacuum suction arm fixing part 411, a plurality of vacuum suction arms 412 are arranged on the vacuum suction arm fixing part 411, and the plurality of vacuum suction arms 412 are parallel to each other and have intervals; the width, number and position distribution of the vacuum suction arms 412 are matched with the intervals between the plurality of electrostatic adsorption benches 313, for example, the width, number and position distribution of the vacuum suction arms 412 are the same as the arrangement of the electrostatic adsorption arms 212. A plurality of vacuum suction holes 413 are arranged on each vacuum suction arm 412, and all the vacuum suction holes 413 are located on the same side; the vacuum suction holes 413 are in communication with a vacuum pumping device such as a vacuum generator through a pipeline, for example, the vacuum suction arm 412 is a hollow plate-shaped cavity, a plurality of through vacuum suction holes 413 are formed on one side wall thereof, and a through air exhaust hole is also formed at another position on the side wall, and a vacuum pumping device is sealingly connected. After the vacuum pumping device is turned on, a negative air pressure is generated in the vacuum suction hole 413, so that the glass substrate G in front of the vacuum suction hole 413 is firmly sucked.

[0129] The working steps of the ion implantation system for flat glass in the preferred embodiment of the present application are as follows:

[0130] Step S1, setting the initial state of ion implantation: the initial state is to ensure that the ion implantation system for flat glass is in a preparation state before ion implantation is performed.

[0131] For example, the inner door valve 311 and the outer door valve 312 of the first loading interlocking module 31 and the second loading interlocking module 32 are in a closed state, the first loading interlocking module 31 and the second loading interlocking module 32 are preferably in a rough vacuum state, the rough vacuum state is close to the required vacuum state for production, for example, the vacuum degree is 10 -1 torr to 10 -5 torr; the ion beam forming module 1 and the implantation module 2 connected thereto have been pumped to the required high vacuum degree, for example, 10 -4 torr to 10 -6 torr, and the mechanical gripper 315 is in an open state, and the stage lifting part 314 is in a retracted (lowered) state.

[0132] Step S2, preparing the glass substrate G to be implanted: fixing the glass substrate box 5 on the placing part of the atmospheric transmission module 4, at least one glass substrate box 5 contains the glass substrate G to be implanted, and at least another glass substrate box 5 is empty and used to contain the glass substrate G after implantation.

[0133] Step S3, grab the glass substrate G to be implanted: atmospheric mechanical arm 41 action, vacuum suction arm 412 moves to the glass substrate box 5 in close to the glass substrate G to be grabbed position, through the suction of vacuum suction hole 413, atmospheric pressure makes a piece of glass substrate G to be grabbed is adsorbed on the vacuum suction arm 412, completes the grab; atmospheric mechanical arm 41 can use six-axis mechanical arm, can also use hydraulic drive type mechanical arm, electrical drive type mechanical arm and mechanical type mechanical arm; preferred point control mechanical arm and continuous trajectory control mechanical arm; control in the corresponding control mode.

[0134] Step S4, transfer or transport the glass substrate G to be implanted: the vacuum suction arm 412 holding the glass substrate G moves to the outside door valve 312 on the first loading interlocking module 31, and turns to be approximately perpendicular (80 degrees to 90 degrees with the horizontal plane, so that the glass substrate G and the vacuum suction arm 412 can enter the loading interlocking module 3); wherein, it needs to be explained that this movement and turning process is preferably completed at the same time, of course, can also be divided into two steps in turn; wherein, the loading interlocking module 3 breaks the vacuum by opening the outside door valve 312; or the outside door valve 312 of the loading interlocking module 3 is a vacuum electromagnetic valve with the function of breaking the vacuum, that is, when energized, the electromagnetic valve opens to suck the vacuum and holds the suction cup, after power off, the inflation hole in the upper part of the electromagnetic valve coil enters the atmosphere, breaking the vacuum and lowering the suction cup.

[0135] Step S5, positioning the glass substrate G to be implanted, and vacuumizing the loading interlocking module, and then opening the inside door valve 311: taking out the glass substrate G to be implanted from the glass substrate box 5, and transferring and positioning the glass substrate G to be implanted at the ion implantation position. Specifically, it includes the following steps:

[0136] The outside door valve 312 of the first loading interlocking module 31 is opened, the vacuum suction arm 412 holding the glass substrate G moves to the first loading interlocking module 31, and the electrostatic adsorption stage 313 and the mechanical clamp 315 are separated, and the glass substrate G is located in the middle position of the upper and lower mechanical clamps 315 and corresponds to the electrostatic adsorption stage 313;

[0137] The stage lifting part 314 is raised, the electrostatic adsorption stage 313 and the mechanical clamp 315 are raised, and the back surface of the glass substrate G is contacted, the electrostatic adsorption stage 313 is powered on, the electrostatic adsorption stage 313 adsorbs the glass substrate G through electrostatic adsorption, and the mechanical clamp 315 acts to clamp and fix the glass substrate G on the upper and lower sides;

[0138] The vacuum suction hole 413 (vacuum device connected) of the vacuum suction arm 412 stops working, releasing the glass substrate G, the stage lifting part 314 further rises by a distance, ensuring that the vacuum suction arm 412 is separated from the glass substrate G and giving enough moving space to the vacuum suction arm 412, and then the vacuum suction arm 412 moves out of the first loading interlocking module 31;

[0139] The outer side door valve 312 of the first loading interlocking module 31 is closed, the vacuum device connected to the first loading interlocking module 31 reduces the vacuum degree in the first loading interlocking module 31 to be close to the vacuum degree in the implantation module 2, and then the inner side door valve 311 of the first loading interlocking module 31 is opened;

[0140] The first vacuum mechanical arm 21 moves into the first loading interlocking module 31, and the electrostatic suction arm 212 penetrates into the space between the glass substrate G and the stage lifting part 314, the electrostatic suction stage 313 and the mechanical clamp jaw 315;

[0141] The stage lifting part 314 retracts, and the electrostatic suction stage 313 and the mechanical clamp jaw 315 are lowered, so that the glass substrate G on them gradually approaches and contacts the electrostatic suction arm 212;

[0142] The electrostatic suction arm 212 is powered on to adsorb the glass substrate G;

[0143] The electrostatic suction stage 313 stops being powered on, and the mechanical clamp jaw 315 releases the glass substrate G; the stage lifting part 314 is further lowered by a distance, ensuring that the electrostatic suction stage 313 is separated from the glass substrate G, ensuring that the glass substrate G is only adsorbed by the electrostatic suction arm 212 of the first vacuum mechanical arm 21, and giving enough moving space to the electrostatic suction arm 212;

[0144] Step S6, ion beam forming and analyzing step, using the beam analyzer 23 on the electrostatic suction arm fixing part 211 of the first vacuum mechanical arm 21 to receive the ion beam and analyze the ion beam;

[0145] Step S7, ion implantation step of the glass substrate G: in the case that the ion beam analyzed by the beam analyzer 23 meets the requirements, the first vacuum mechanical arm 21 repeatedly moves the glass substrate G at a corresponding speed along the direction of the first guide rail 24 according to the calculation result of the dose controller to complete the ion implantation;

[0146] Step S8, post-processing step of the glass substrate G after ion implantation: the glass substrate G after ion implantation is taken out and transferred and placed into the glass substrate box 5 of the glass substrate G after implantation. The specific steps are as follows:

[0147] The vacuum mechanical arm 21 moves to place the glass substrate G after implantation back into the first loading interlocking module 31;

[0148] The carrier lifting part 314 is lifted, the electrostatic chuck 313 and the mechanical gripper 315 are lifted to contact the back of the glass substrate G, the electrostatic chuck 313 is powered, the electrostatic chuck 313 adsorbs the glass substrate G by electrostatic adsorption, and the mechanical gripper 315 acts to clamp and fix the glass substrate G on both sides;

[0149] The electrostatic chuck arm 212 stops being powered and releases the glass substrate G, the carrier lifting part 314 is further lifted by a distance to ensure that the electrostatic chuck arm 212 is separated from the glass substrate G and to give enough moving space, and then the vacuum adsorption arm 412 moves out of the first loading interlocking module 31;

[0150] The inner side door valve 311 of the first loading interlocking module 31 is closed, the first loading interlocking module 31 is released from the vacuum state, and the air pressure in the first loading interlocking module 31 approaches the air pressure of the atmospheric transmission module 4, that is, the normal pressure, about one atmosphere;

[0151] The outer side door valve 312 of the first loading interlocking module 31 is opened, the atmospheric mechanical arm 41 acts, the vacuum adsorption arm 412 moves to the first loading interlocking module 31 between the glass substrate G and the carrier lifting part 314, the electrostatic chuck 313 and the mechanical gripper 315 are lowered to contact the glass substrate G and the vacuum adsorption arm 412; the vacuum adsorption arm 412 works to adsorb the glass substrate G; the electrostatic chuck 313 and the mechanical gripper 315 release the glass substrate G, and then are further lowered by a distance; the vacuum adsorption arm 412 moves out to move the glass substrate G to the glass substrate G box 5 for placing the glass substrate G after implantation, so as to complete the implantation of one piece of glass substrate G, and the implantation is repeated.

[0152] In the ion implantation system for flat glass according to the present application, two sets of vacuum mechanical arms and loading interlocking modules are preferably provided, which have the advantages of redundancy and staggered design, and can greatly improve the work efficiency compared with the case of only one set of vacuum mechanical arms and loading interlocking modules. After the atmospheric mechanical arm 41 puts a glass substrate G to be implanted into the first loading interlocking module 31, another glass substrate G to be implanted can be immediately grabbed from the glass substrate G box 5 and put into the second loading interlocking module 32. The second vacuum mechanical arm 22 moves along the second guide rail 25 to grab, scan and put back the glass substrate G in the second loading interlocking module 32. The specific process is similar to that of the first loading interlocking module 31 and the first vacuum mechanical arm 21, and will not be repeated here. That is, the first vacuum mechanical arm 21 and the second vacuum mechanical arm 22 alternately perform scanning work, and the first loading interlocking module 31 and the second loading interlocking module 32 (as well as the atmospheric transmission module 4) cooperate with the mechanical arm to load and interlock the glass substrate G. For example, when the first mechanical arm 21 performs scanning, the second loading interlocking module 32 performs work of adjusting the vacuum degree, so that the staggered design obviously improves the work efficiency.

[0153] In the ion implantation system for flat glass according to the present application, the electrostatic adsorption stage 313 and the mechanical clamping jaw 315 are lifted by the stage lifting part 314 to realize a quick and stable transfer process of the glass substrate G. After obtaining the glass substrate G, the electrostatic adsorption stage 313 and the mechanical clamping jaw 315 are further lifted to separate the glass substrate G from other mechanical arms. After releasing the glass substrate G, the electrostatic adsorption stage 313 and the mechanical clamping jaw 315 are further lowered to separate themselves from the glass substrate G. Thus, the glass substrate G is only held by the correct device when it starts to move, avoiding sticking and other interference such as accidental collision, and the reliability of the moving and conveying process is high.

[0154] In summary, the above is only a preferred embodiment of the present application, and is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. An ion beam forming module for flat glass, characterized by, The ion source combination unit, the ion beam mass and charge ratio analysis magnetic field unit, the expansion magnet combination unit and the collimating magnet combination unit are sequentially connected; The ion source combination unit is used for generating an ion beam; the ion source combination unit comprises a plurality of ion source devices arranged side by side, and an energy and material supply device is connected to the input end of the ion source device to provide the ion source device with required voltage, gas and / or vacuum degree; The ion beam mass and charge ratio analysis magnetic field unit is used for generating a magnetic field, deflecting the ion beam and screening out impurities in the ion beam; The expansion magnet combination unit is used for expanding and stretching the ion beam in the height direction; the expansion magnet combination unit comprises a plurality of groups of expansion magnets, and the position of each group of expansion magnets corresponds to the two sides of the ion beam generated by one ion source device; an expansion baffle is arranged on the side of the expansion magnet downstream in the direction of the ion beam; The collimating magnet combination unit is used for collimating or parallelly stretching the ion beam so that the ion beams in the ion beam are parallel to each other; the collimating magnet combination unit is located at the intersection of a plurality of ion beams generated by a plurality of ion source devices after being deflected by the ion beam mass and charge ratio analysis magnetic field unit; the collimating magnet combination unit comprises a collimating magnet cavity, a collimating magnet group is fixedly arranged in the collimating magnet cavity, the internal space of the collimating magnet cavity is wide at both ends and narrow in the middle, the middle narrow part corresponds to the working end of the collimating magnet group, and the collimating magnet group is located on both sides of the ion beam; a mounting hole is formed in the side surface of the collimating magnet cavity for sealingly mounting the collimating magnet group; A beam current detection device is arranged behind the collimating magnet cavity, the working surface of the beam current detection device is higher than the ion beam, the beam current detection device is arranged on a mechanical arm, and the mechanical arm is used for moving the position of the working surface of the beam current detection device to receive the ion beam or move away; a plasma flow gun is further arranged behind the collimating magnet cavity.

2. The ion beam forming module for flat panel glass of claim 1, wherein, An ion extraction electrode group is arranged on the output side of the ion source device, an electrode translation mechanism and a controller are arranged on the ion extraction electrode group, and the distance between the ion extraction electrode group and the output end of the ion source device is adjusted.

3. The ion beam forming module for flat panel glass of claim 1, wherein, An ion source gate valve is arranged between the ion beam mass and charge ratio analysis magnetic field unit and the expansion magnet combination unit; the ion source gate valve comprises a gate valve cavity, the shape of the gate valve cavity is that the cross-sectional height gradually increases along the direction of the ion beam; a valve plate cavity for accommodating a valve plate is sealingly connected to the upper part of the gate valve cavity; a gas cylinder is arranged above the valve plate cavity, and the piston rod of the gas cylinder is connected to the valve plate after penetrating through the top wall of the valve plate cavity.

4. The ion beam forming module for flat panel glass of claim 3, wherein, An ion receiving plate is arranged on the side of the valve plate facing the ion beam mass and charge ratio analysis magnetic field unit.

5. The ion beam forming module for flat glass according to any one of claims 1 to 4, characterized in that A step is arranged on the side surface of the ion beam forming module, the step is a steel structure support, and the step has an accommodating space below; a ladder is arranged above the step and extends upward along the outer side surface of the ion beam forming module to the top of the ion beam forming module; a fence is arranged at the edge of the top of the ion beam forming module except for the position adjacent to the ladder; an openable and sealable maintenance window is arranged on the top of the ion beam forming module, and an anti-slip tread plate is arranged around the maintenance window.

6. An ion implantation system for flat glass, characterized by The ion beam forming module for flat glass as claimed in any one of claims 1-5, further comprising an implantation module, a load interlock module and an atmospheric transfer module, the ion beam generating module, the implantation module, the load interlock module and the atmospheric transfer module being connected in sequence; the implantation module is used for scanning and moving the flat glass to complete ion implantation; the load interlock module is used for uploading or downloading the flat glass; and the atmospheric transfer module is used for transferring the flat glass in an atmospheric environment.

7. An ion implantation method for flat glass, characterized by, The ion implantation system for flat glass as claimed in claim 6 is implemented, comprising the following steps: The initial state is to ensure that the ion implantation system for flat glass is in standby state for ion implantation; The atmospheric transfer module transfers the flat glass to be implanted with ions to the load interlock module; The load interlock module is vacuumized; The implantation module removes the flat glass from the load interlock module and moves in the implantation module, so that the strip-shaped ion beam output by the ion beam forming module scans the flat glass to complete ion implantation of the flat glass; The implantation module sends the flat glass implanted with ions back to the load interlock module; The load interlock module is broken vacuum; The atmospheric transfer module removes the processed flat glass from the load interlock module; The process of generating and outputting the ion beam by the ion beam forming module comprises the following steps: The ion source devices in the ion source combination unit ionize the gas to generate ions, which are extracted under the action of an electric field, and form several strip-shaped ion beams at the same time; The ion beam mass and charge ratio analysis magnetic field unit forms an analysis magnetic field, each ion beam is deflected at a specific angle under the action of the analysis magnetic field, and only the required specific ions are allowed to deflect along the predetermined route, and the rest of the unwanted impurity ions move to the inner side of the ion beam mass and charge ratio analysis magnetic field unit and are blocked; The expansion magnet combination unit forms an expansion magnetic field, each ion beam corresponds to a group of expansion magnets, and under the action of the expansion magnetic field, the ion beam is stretched and diverged in the height direction, thereby increasing the height of the ion beam; The collimating magnet combination unit forms a collimating magnetic field, at the intersection of the several ion beams, the ion beams are collimated or parallel stretched under the action of the collimating magnetic field, so that the travel directions of the ions in the ion beams are parallel to each other; thereby forming a required strip-shaped ion beam at the output end of the collimating magnet combination unit. The ion implantation system for flat glass as claimed in claim 6 is implemented, comprising the following steps: The initial state is to ensure that the ion implantation system for flat glass is in standby state for ion implantation; The atmospheric transfer module transfers the flat glass to be implanted with ions to the load interlock module; The load interlock module is vacuumized; The implantation module removes the flat glass from the load interlock module and moves in the implantation module, so that the strip-shaped ion beam output by the ion beam forming module scans the flat glass to complete ion implantation of the flat glass; The implantation module sends the flat glass implanted with ions back to the load interlock module; The load interlock module is broken vacuum; The atmospheric transfer module removes the processed flat glass from the load interlock module; The process of generating and outputting the ion beam by the ion beam forming module comprises the following steps: The ion source devices in the ion source combination unit ionize the gas to generate ions, which are extracted under the action of an electric field, and form several strip-shaped ion beams at the same time; The ion beam mass and charge ratio analysis magnetic field unit forms an analysis magnetic field, each ion beam is deflected at a specific angle under the action of the analysis magnetic field, and only the required specific ions are allowed to deflect along the predetermined route, and the rest of the unwanted impurity ions move to the inner side of the ion beam mass and charge ratio analysis magnetic field unit and are blocked; The expansion magnet combination unit forms an expansion magnetic field, each ion beam corresponds to a group of expansion magnets, and under the action of the expansion magnetic field, the ion beam is stretched and diverged in the height direction, thereby increasing the height of the ion beam; The collimating magnet combination unit forms a collimating magnetic field, at the intersection of the several ion beams, the ion beams are collimated or parallel stretched under the action of the collimating magnetic field, so that the travel directions of the ions in the ion beams are parallel to each other; thereby forming a required strip-shaped ion beam at the output end of the collimating magnet combination unit.

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