Bandpass filter, filter tuning method, and tuning device

Abstract

The application relates to a band-pass filter, a filter frequency modulation method and a frequency modulation device. The band-pass filter comprises a signal layer, a first ground layer and a second ground layer arranged from top to bottom; the signal layer and the first ground layer are coupled and connected through a first dielectric unit; the first ground layer and the second ground layer are coupled and connected through a second dielectric unit, and a metal probe penetrating through the second dielectric unit is arranged between the first ground layer and the second ground layer; the number and position of the metal probe are used for adjusting the filtering frequency band of the band-pass filter on the signal. The band-pass filter can adjust the working frequency band through the probe, and the scene applicability of the band-pass filter can be improved.

Description

Technical Field

[0001] This application relates to the field of microwave technology, and in particular to a bandpass filter, a filter frequency modulation method, and a frequency modulation device. Background Technology

[0002] With the development of microwave technology, microwave devices are widely used in many fields, such as spaceborne and airborne applications. Different application fields correspond to different microwave operating frequency bands, which requires filters to remove interference noise and achieve frequency selection.

[0003] Taking the airborne field as an example, for the operating frequency range, multiple filter components are connected together through interconnecting devices to design a bandpass filter, so that the output signal of the bandpass filter meets the signal transmission requirements of the field.

[0004] However, in related technologies, the bandpass filter structures designed for the operating frequency band are relatively simple, resulting in poor applicability of bandpass filters in various scenarios. Summary of the Invention

[0005] Therefore, it is necessary to provide a bandpass filter, a filter frequency modulation method, and a frequency modulation device to address the above-mentioned technical problems and improve the applicability of the bandpass filter in various scenarios.

[0006] In a first aspect, this application provides a bandpass filter, which includes a signal layer, a first ground layer and a second ground layer arranged from top to bottom; the signal layer and the first ground layer are coupled together through a first dielectric unit; the first ground layer and the second ground layer are coupled together through a second dielectric unit, and a metal probe penetrating the second dielectric unit is provided between the first ground layer and the second ground layer.

[0007] The number and position of metal probes are used to adjust the filtering frequency band of the bandpass filter for the signal.

[0008] In one embodiment, the first ground layer includes a first ground plane and a first metal coupling patch, the second ground layer includes a second ground plane and a resonator, and the second dielectric unit includes a metal grounding via.

[0009] A metal probe passes through a metal grounding hole to short-circuit the first metal coupling patch and the resonator.

[0010] In one embodiment, the first metal coupling patch includes two metal patches with a first gap between them, and the two metal patches are capacitively coupled through the first gap.

[0011] In one embodiment, the size of the resonator is determined based on the operating bandwidth of the bandpass filter.

[0012] In one embodiment, the signal layer includes a microstrip line and a second metal coupling patch, the microstrip line and the second metal coupling patch constituting a composite left-handed and right-handed transmission line unit structure;

[0013] The second metal coupling patch is connected to the first metal coupling patch through the first dielectric unit.

[0014] In one embodiment, the microstrip line includes a first microstrip line and a second microstrip line; the second metal coupling patch includes a first metal patch and a second metal patch, a second gap exists between the first metal patch and the second metal patch, and the first metal patch and the second metal patch are capacitively coupled through the second gap;

[0015] One end of the first microstrip line is a signal receiving end, and the other end is connected to one end of the first metal patch; one end of the second microstrip line is connected to one end of the second metal patch, and the other end of the second microstrip line is a signal output end.

[0016] In one embodiment, the difference between the size of the first metal coupling patch and the size of the second metal coupling patch is within a preset range.

[0017] In one embodiment, the first dielectric unit includes a first dielectric layer and a second dielectric layer; the first dielectric layer is located below the signal layer and above the second dielectric layer.

[0018] In one embodiment, the signal layer, the first ground layer, and the second ground layer are both made of metallic materials, and the first dielectric unit and the second dielectric unit are both made of insulating materials.

[0019] In one embodiment, the signal layer, the first ground layer, and the second ground layer are connected by a lamination process.

[0020] Secondly, this application also provides a filter frequency modulation method, the method comprising:

[0021] Based on the bandwidth of the bandpass filter, determine the number and location information of the metal probes;

[0022] The frequency band of the signal can be adjusted by changing the number and position of the metal probes.

[0023] Thirdly, this application also provides a frequency modulation device, which includes a memory and a processor. The memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0024] Based on the bandwidth of the bandpass filter, determine the number and location information of the metal probes;

[0025] The frequency band of the signal can be adjusted by changing the number and position of the metal probes.

[0026] In the aforementioned bandpass filter, filter frequency modulation method, and frequency modulation device, the bandpass filter includes a signal layer, a first ground layer, and a second ground layer arranged from top to bottom. The signal layer and the first ground layer are coupled together through a first dielectric unit; the first ground layer and the second ground layer are coupled together through a second dielectric unit, and a metal probe penetrating the second dielectric unit is disposed between the first ground layer and the second ground layer. The number and position of the metal probes are used to adjust the filtering frequency band of the bandpass filter for the signal. Because the signal layer and the first ground layer are coupled together through the first dielectric unit, and the first ground layer and the second ground layer are connected through the metal probe penetrating the second dielectric unit, the resulting bandpass filter has a compact structure, making it easy to integrate into microwave devices in various scenarios. Furthermore, by adjusting the number and position of the metal probes to adjust the filtering frequency band of the bandpass filter, it is equivalent to only needing to adjust the number or position of the probes to meet the signal transmission requirements of different frequency ranges under the condition of a fixed structure, thereby improving the scenario applicability of the bandpass filter. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a bandpass filter in one embodiment;

[0028] Figure 2 This is a schematic diagram of the bandpass filter in another embodiment;

[0029] Figure 3 This is a schematic diagram of the bandpass filter in another embodiment;

[0030] Figure 4 This is a schematic diagram of the bandpass filter in another embodiment;

[0031] Figure 5 This is a schematic diagram of the bandpass filter in another embodiment;

[0032] Figure 6 This is a schematic diagram of the bandpass filter in another embodiment;

[0033] Figure 7 This is a schematic diagram of the bandpass filter in another embodiment;

[0034] Figure 8 This is a top view of a bandpass filter in one embodiment;

[0035] Figure 9 This is a side view of a bandpass filter in one embodiment;

[0036] Figure 10This is a top view of the first ground layer of a bandpass filter in one embodiment;

[0037] Figure 11 This is a top view of the second ground layer of a bandpass filter in one embodiment;

[0038] Figure 12 This is a schematic diagram of the loss curve of a bandpass filter in one embodiment;

[0039] Figure 13 This is a flowchart illustrating a filter frequency modulation method in one embodiment.

[0040] Explanation of reference numerals in the attached figures:

[0041] 01: Bandpass filter; 11: Signal layer;

[0042] 111: Microstrip line; 111a: First microstrip line;

[0043] 111b: Second microstrip line; 112: Second metallic coupling patch;

[0044] 112a: First metal patch; 112b: Second metal patch;

[0045] 12: First dielectric unit; 121: First dielectric layer;

[0046] 122: Second dielectric layer; 13: First ground layer;

[0047] 131: First ground plane; 132: First metal coupling patch;

[0048] 14: Second dielectric unit; 141: Metal grounding hole;

[0049] 15: Second grounding layer; 151: Second grounding plate;

[0050] 152: Resonator; 16: Metal probe. Detailed Implementation

[0051] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and accompanying drawings of this application, are intended to cover non-exclusive inclusion. In the description of embodiments of this application, "a plurality of" and "multiple layers" mean two or more, unless otherwise expressly specified. The reference to "embodiment" herein means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0053] In the description of the embodiments of this application, the technical terms "length," "width," "thickness," "upper," "lower," "front," "rear," "left," and "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the embodiments of this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0054] With the development of microwave integrated interconnect technology, microwave devices are widely used in many fields. Different application fields correspond to different microwave operating frequency bands, and in these cases, filters are needed to remove interference noise and achieve the purpose of frequency selection.

[0055] Taking the airborne field as an example, for the operating frequency range, multiple filter components are connected together through interconnecting devices to design a bandpass filter, so that the output signal of the bandpass filter meets the signal transmission requirements of the field.

[0056] However, in related technologies, bandpass filters are typically designed by creating a low-frequency blocking circuit and a high-frequency blocking circuit corresponding to the low and high frequencies of the operating frequency band, and then connecting the two circuits in series to achieve frequency selection. Therefore, the bandpass filter structures designed for the operating frequency band in related technologies are relatively simple, resulting in poor applicability. Based on this, this application proposes a bandpass filter that can flexibly adjust the operating frequency band by changing the number of probes in the bandpass filter structure, thereby improving the applicability of the bandpass filter.

[0057] In one embodiment, such as Figure 1 As shown, the bandpass filter 01 includes a signal layer 11, a first ground layer 13, and a second ground layer 15 arranged from top to bottom; the signal layer 11 and the first ground layer 13 are coupled together through a first dielectric unit 12; the first ground layer 13 and the second ground layer 15 are coupled together through a second dielectric unit 14, and a metal probe 16 penetrating the second dielectric unit 14 is provided between the first ground layer 13 and the second ground layer 15.

[0058] The number and position of the metal probes 16 are used to adjust the filtering frequency band of the signal by the bandpass filter 01.

[0059] The bandpass filter 01 is integrated on a multi-layer microwave backplane, and its structure is also a multi-layer stacked structure. Figure 1 As can be seen, the multi-layer stacked structure of the bandpass filter 01, from top to bottom, consists of: signal layer 11, first dielectric unit 12, first ground layer 13, second dielectric unit 14, and second ground layer 15. Among them, signal layer 11, first ground layer 13, and second ground layer 15 are all signal processing layers, used for signal processing and transmission, to realize the frequency selection function of bandpass filter 01.

[0060] It is understood that the bandpass filter 01 is manufactured using a lamination process. To prevent the electromagnetic field generated by the signal processing layer itself from affecting adjacent signal processing layers, dielectric units are used to isolate adjacent groups of signal processing layers, namely signal layer 11 and the first ground layer 13, and the first ground layer 13 and the second ground layer 15. In this embodiment, the first dielectric unit 12 is below the signal layer 11 and above the first ground layer 13; the second dielectric unit 14 is below the first ground layer 13 and above the second ground layer 15.

[0061] Optionally, a hole is drilled in the first dielectric unit 12 to achieve an air dielectric connection between the signal layer 11 and the first ground layer 13, i.e., a spatial electromagnetic coupling connection. A hole is drilled in the second dielectric unit 14, and a metal probe 16 is provided penetrating the second dielectric unit 14 to achieve a metal dielectric connection between the first ground layer 13 and the second ground layer 15. It should be noted that the height of the metal probe 16 is consistent with the sum of the thicknesses of the first ground layer 13, the second dielectric unit 14, and the second ground layer 15, to ensure that the metal probe 16 can penetrate the second dielectric unit 14 and achieve a short-circuit connection between the first ground layer 13 and the second ground layer 15.

[0062] In this embodiment, the bandpass filter 01 includes a signal layer 11, a first ground layer 13, and a second ground layer 15 arranged from top to bottom. The signal layer 11 and the first ground layer 13 are coupled together via a first dielectric unit 12. The first ground layer 13 and the second ground layer 15 are coupled together via a second dielectric unit 14, and a metal probe 16 penetrating the second dielectric unit 14 is disposed between the first ground layer 13 and the second ground layer 15. The number and position of the metal probes 16 are used to adjust the filtering frequency band of the bandpass filter 01. The bandpass filter provided in this embodiment has a compact structure because the signal layer and the first ground layer are coupled together via the first dielectric unit, and the first and second ground layers are connected via metal probes penetrating the second dielectric unit. This makes it easy to integrate into microwave devices in various scenarios. Furthermore, by adjusting the number and position of the metal probes to adjust the filtering frequency band of the bandpass filter, the bandpass filter provided in this embodiment, under the condition of a fixed structure, only needs to adjust the number or position of the probes to meet the signal transmission requirements of different frequency ranges, thereby improving the scenario applicability of the bandpass filter.

[0063] Based on the above embodiments that describe the hierarchical structure and connection relationships of the bandpass filter 01, the specific components of each ground layer and dielectric unit in the bandpass filter 01 will be further described.

[0064] In one embodiment, the first ground layer 13 includes a first ground plane 131 and a first metal coupling patch 132, the second ground layer 15 includes a second ground plane 151 and a resonator 152, and the second dielectric unit 14 includes a metal grounding hole 141.

[0065] The metal probe 16 passes through the metal grounding hole 141 to short-circuit the first metal coupling patch 132 and the resonator 152.

[0066] Please see Figure 2 , Figure 2 This is a schematic diagram of bandpass filter 01, as shown below. Figure 2As shown, the first grounding layer 13 includes a first ground plane 131, which can be a metal plate. An isolation frame is etched inside the first ground plane 131 by an electroplating process. The isolation frame includes a first metal coupling patch 132. Furthermore, a metal grounding hole 141 is generated by drilling a hole in the first ground plane 131.

[0067] Please continue reading Figure 2 The second grounding layer 15 includes a second grounding plate 151, which can be a metal plate, such as a copper plate. A resonator 152 is etched in the middle of the second grounding plate 151 by an electroplating process. The resonator 152 can be a complementary open-loop resonator. Furthermore, a metal grounding hole is generated by drilling a hole in the second grounding plate 151.

[0068] With both the first grounding layer 13 and the second grounding layer 15 having metal grounding holes, a hole is drilled in the second dielectric unit 14 to generate a metal grounding hole 141. The second dielectric unit 14 can be an insulating layer.

[0069] In summary, due to the correspondence between the metal grounding holes of the first grounding layer 13, the second dielectric unit 14, and the second grounding layer 15, the first grounding layer 13 and the second grounding layer 15 are connected through the air medium; the metal probe 16 passes through the metal grounding hole 141 of the first grounding layer 13, the second dielectric unit 14, and the second grounding layer 15, and short-circuit the first metal coupling patch 132 in the first grounding layer 13 and the resonator 152 in the second grounding layer 15.

[0070] In the bandpass filter provided in this application embodiment, the first ground layer and the second ground layer are short-circuited together by a metal probe, which can quickly establish the signal transmission relationship between the resonator in the second ground layer and the first metal coupling patch in the first ground layer, thereby improving the filtering efficiency of the bandpass filter.

[0071] In a bandpass filter, the first metal coupling patch in the first ground layer, the resonator in the second ground layer, and the signal layer form a closed loop to achieve the filtering effect of the bandpass filter. Based on this, the structure of the first metal coupling patch in the first ground layer will be described below through an embodiment.

[0072] In one embodiment, the first metal coupling patch 132 includes two metal patches with a first gap between them, and the two metal patches are capacitively coupled through the first gap.

[0073] like Figure 3 As shown, Figure 3 This is a schematic diagram of the structure of bandpass filter 01. Figure 3It is known that the first grounding layer 13 includes a first metal coupling patch 132, which comprises two metal patches symmetrically distributed in a left-right configuration. A first gap exists between the two metal patches, allowing the first metal coupling patch 132 to capacitively couple through the first gap between the two metal patches.

[0074] In this embodiment, a first metal coupling patch is generated using two metal patches, which can be made of the same material as the first ground layer. This is equivalent to constructing an isolation frame on the surface of the first ground layer using an etching process, and then dividing the isolation frame into two metal patches to generate the first metal coupling patch. This construction method maximizes the utilization of the material of the first ground layer in the bandpass filter, avoiding resource waste.

[0075] In a bandpass filter, the first metal coupling patch in the first ground layer, the resonator in the second ground layer, and the signal layer form a closed loop to achieve the filtering effect of the bandpass filter. Based on this, the following example illustrates the relationship between the resonator and actual filtering requirements.

[0076] In one embodiment, the size of the resonator 152 is determined based on the operating bandwidth of the bandpass filter 01.

[0077] Optionally, the resonator 152 in the bandpass filter 01 can be a complementary open-loop resonator. The complementary open-loop resonator includes a pair of concentric, subwavelength open metal rings, each with a notch, causing the capacitance on the open resonator rings to converge at the notch. Thus, each open metal ring acts as an inductor, and the notch in each open metal ring acts as a capacitor. Under the combined action of capacitance and inductance, a resonant circuit is generated to achieve multiple functions of the bandpass filter 01, including frequency selection, frequency stabilization, energy storage, energy release, and vibration.

[0078] In this embodiment, the size of the resonator 152 is equivalent to the size of each open metal ring. The expression for the size of the open metal ring and the operating frequency is as follows:

[0079] L=C / (2f) Equation 1

[0080] In Equation 1, L is the size of the open metal ring, C is the capacitance of the resonator, and f is the operating frequency of the filter.

[0081] As can be seen from Equation 1, the size of the resonator 152 has a linear relationship with the operating frequency of the bandpass filter 01. This means that by adjusting the size of the resonator 152, a resonant circuit that meets the operating frequency band of the bandpass filter 01 can be constructed, thereby achieving the frequency selection purpose of the bandpass filter 01.

[0082] Furthermore, the material of the resonator 152 can be the same as that of the second ground layer 15. This is equivalent to forming a pair of concentric open metal rings on the surface of the second ground layer 15 by etching, and connecting the pair of concentric open metal rings through the gaps in each open metal ring to form the resonator 152.

[0083] In this embodiment, the size of the resonator is determined by the operating frequency band of the bandpass filter, resulting in a simple design process that is easy to implement. Furthermore, due to the logical relationship between the resonator size and the bandpass filter, the bandpass filter determined based on the resonator size provided in this embodiment possesses high reliability.

[0084] In a bandpass filter, the first metal coupling patch in the first ground layer, the resonator in the second ground layer, and the signal layer form a closed loop to achieve the filtering effect of the bandpass filter. Based on this, the components of the signal layer are described below through an embodiment.

[0085] In one embodiment, the signal layer 11 includes a microstrip line 111 and a second metal coupling patch 112, which constitute a composite left-handed and right-handed transmission line unit structure; the second metal coupling patch 112 is connected to the first metal coupling patch 132 through the first dielectric unit 12.

[0086] like Figure 4 As shown, Figure 4 This is a schematic diagram of the structure of bandpass filter 01. Figure 4 As can be seen, the signal layer 11 includes a microstrip line 111, which is used for signal reception, conversion, and output processing. Furthermore, the signal layer 11 also includes a second metal coupling patch 112, which is connected to the microstrip line 111, forming a composite left- and right-handed transmission line unit structure.

[0087] It should be noted that the first ground layer 13 includes a first metal coupling patch 132, and the signal layer 11 includes a second metal coupling patch 112.

[0088] Optionally, both the first metal coupling patch 132 and the second metal coupling patch 112 are composed of two symmetrically arranged metal patches. A hole is drilled in the first dielectric unit 12 to form a metal grounding hole 141, and the first metal coupling patch 132 and the second metal coupling patch 112 are spatially connected through the grounding hole of the first dielectric unit 12. This application does not limit the dimensions of the first metal coupling patch 132 and the second metal coupling patch 112, or the gaps between the metal coupling patches, provided that both are made of metal.

[0089] In this embodiment, the signal layer is a composite left- and right-handed transmission line unit structure composed of microstrip lines and a second metal coupling patch. This structure is symmetrical, which facilitates the design and application of bandpass filters.

[0090] The foregoing embodiments have described the components of the signal layer, which includes microstrip lines and a second metal coupling patch. Based on this, the connection method of each component in the signal layer will be described below through an embodiment.

[0091] In one embodiment, the microstrip line 111 includes a first microstrip line 111a and a second microstrip line 111b; the second metal coupling patch 112 includes a first metal patch 112a and a second metal patch 112b, a second gap exists between the first metal patch 112a and the second metal patch 112b, and the first metal patch 112a and the second metal patch 112b are capacitively coupled through the second gap.

[0092] One end of the first microstrip line 111a is a signal receiving end, and the other end is connected to one end of the first metal patch 112a; one end of the second microstrip line 111b is connected to one end of the second metal patch 112b, and the other end of the second microstrip line 111b is a signal output end.

[0093] like Figure 5 The bandpass filter shown has a signal layer 11 including a microstrip line 111 and a second metal coupling patch 112. The second metal coupling patch 112 includes a first metal patch 112a and a second metal patch 112b, and a second gap exists between the first metal patch 112a and the second metal patch 112b. The second gap serves two purposes:

[0094] (1) The first metal patch 112a and the second metal patch 112b are capacitively coupled through the second gap.

[0095] (2) The high-frequency signals of the first metal patch 112a and the second metal patch 112b are blocked by the second gap, so as to achieve the frequency selection purpose of the bandpass filter to "block high frequency".

[0096] It should be noted that the microstrip line 111 and the second metal coupling patch 112 together form a composite left-handed and right-handed transmission line structure. Since the two metal patches of the second metal coupling patch correspond to each other, the microstrip line 111 includes a first microstrip line 111a and a second microstrip line 111b, and according to the signal transmission direction, they are in the following order: first microstrip line 111a, first metal patch 112a, second metal patch 112b, and second microstrip line 111b. Correspondingly, one end of the first microstrip line 111a is the signal input terminal, and the other end of the first microstrip line 111a is connected to the first metal patch 112a. The first metal patch 112a and the second metal patch 112b are coupled through a second gap capacitor. The second metal patch 112b is connected to one end of the second microstrip line 111b, and the other end of the second microstrip line 111b is the signal output terminal.

[0097] In this embodiment, the microstrip line is connected to the second metal coupling patch. Since there is a gap between the two metal patches in the second metal coupling patch, it can block the high-frequency signal passing through the microstrip line, thereby achieving the effect of a bandpass filter blocking high frequencies. In other words, the design of the second metal coupling patch in this embodiment can block high frequencies. Combined with the low-frequency blocking of the resonant circuit, the frequency selection of the bandpass filter can be achieved.

[0098] In a bandpass filter, the signal layer includes a second metal slot coupling patch, and the first ground layer includes a first metal slot coupling patch. The second and first metal slot coupling patches have the same structure, such as gaps between the metal patches or a symmetrical structure. Based on this, the differences between the second and first metal slot coupling patches will be explained below through an embodiment.

[0099] In one embodiment, the difference between the size of the first metal coupling patch 132 and the size of the second metal coupling patch 112 is within a preset range.

[0100] In the bandpass filter 01, the first metal coupling patch 132 and the second metal coupling patch 112 are connected through an air medium space. The materials of the first metal coupling patch 132 and the second metal coupling patch 112 are both metal materials. The structures of the first metal coupling patch 132 and the second metal coupling patch 112 are both left-right symmetrical structures. There are gaps between the corresponding metal patches of the first metal coupling patch 132 and the second metal coupling patch 112 to allow for capacitive coupling connection of the metal patches.

[0101] The difference between the dimensions of the first metal coupling patch 132 and the second metal coupling patch 112 is positively correlated with the filtering efficiency of the bandpass filter. The smaller the difference between the dimensions of the first metal coupling patch 132 and the second metal coupling patch 112, the closer the coupling between them, and the higher the signal processing efficiency of the bandpass filter 01. Therefore, when the difference between the dimensions of the first metal coupling patch 132 and the second metal coupling patch 112 is within a preset range, the filtering efficiency of the bandpass filter 01 can be improved.

[0102] Optionally, the size of the first metal coupling patch 132 is equal to the size of the second metal coupling patch 112, and the first gap of the first metal coupling patch 132 is the same as the second gap of the second metal coupling patch 112. The center position of the first metal coupling patch 132 is perpendicular to the center position of the second metal coupling patch 112.

[0103] In this embodiment, by limiting the difference between the size of the first metal coupling patch and the size of the second metal coupling patch to a preset range, the coupling relationship between the first metal coupling patch and the second metal coupling patch is strengthened, thereby improving the filtering efficiency of the bandpass filter.

[0104] The signal layer includes a microstrip line and a second metal-coupled patch, which is connected to the first ground layer via a first dielectric unit. Due to the stacked structure design of the bandpass filter, the signal layer must first be associated with the first dielectric unit before the signal layer is stacked with the first ground layer. Based on this, the components and positional relationships of the first dielectric unit are described below through an embodiment.

[0105] In one embodiment, the first dielectric unit 12 includes a first dielectric layer 121 and a second dielectric layer 122; the first dielectric layer 121 is located below the signal layer 11 and above the second dielectric layer 122.

[0106] like Figure 6 The bandpass filter 01 shown has a signal layer 11 located above a first dielectric unit 12. The first dielectric unit 12 comprises two layers: a first dielectric layer 121 and a second dielectric layer 122, from top to bottom. The signal layer 11 can be placed on the surface of the first dielectric layer 121 to establish spatial electromagnetic coupling with the first ground layer 13. The first dielectric layer 121 is used to fix the signal layer 11, and the second dielectric layer 122 has a grounding hole to connect and isolate the signal layer 11 from the first ground layer 13. In this embodiment, the thickness of the second dielectric layer 122 is not limited.

[0107] In this embodiment, the first dielectric unit includes two dielectric layers from top to bottom. On the one hand, it can fix the signal layer, and on the other hand, it can maintain the connection between the signal layer and the first ground layer, so as to improve the compactness of the bandpass filter structure.

[0108] A bandpass filter has a structure consisting of multiple tightly connected layers. Generally, the materials of the layers are different; for example, metal layers are connected by dielectric layers. Based on this, the materials of each layer in a bandpass filter will be described below through an embodiment.

[0109] In one embodiment, the signal layer 11, the first ground layer 13, and the second ground layer 15 are all made of metallic materials, and the first dielectric unit 12 and the second dielectric unit 14 are both made of insulating materials.

[0110] Optionally, the signal layer 11, the first ground layer 13, and the second ground layer 15 are all made of copper foil. Correspondingly, the first metal coupling patch 132, the second metal coupling patch 112, and the resonator 152 are also made of copper foil. This means that the second metal coupling patch 112 can be fabricated on the first ground plane 131, and the resonator 152 can be fabricated on the second ground plane 151.

[0111] Both the first dielectric unit 12 and the second dielectric unit 14 are made of insulating materials, such as silicon dioxide. The first dielectric unit 12 includes a first dielectric layer 121 and a second dielectric layer 122. It should be noted that although the first dielectric layer 121 and the second dielectric layer 122 are two closely connected layers, the function of the first dielectric layer 121 is to fix the signal layer 11, while the function of the second dielectric layer 122 is to connect the signal layer 11 and the first ground layer. When adjacent layers have different functions, two different insulating materials are usually selected.

[0112] Optionally, the second dielectric layer 122 and the second dielectric unit 14 are made of “FR-28-0040-50” insulating material, which has a relative permittivity of 2.75 and a dielectric loss tangent of 0.0012.

[0113] Optionally, the first dielectric layer 121 uses "TSM-DS3" insulating material, which has a relative permittivity of 2.94 and a dielectric loss tangent of 0.0012.

[0114] In this embodiment, the signal layer, the first ground layer, and the second ground layer are made of metal materials, and insulating dielectric units are used between the metal materials as isolation films between adjacent metal layers. Such a bandpass filter can further compress the volume of the bandpass filter, making the structure of the bandpass filter more compact.

[0115] The fabrication process of the stacked structure of a bandpass filter is described below through an example.

[0116] In one embodiment, the signal layer 11, the first ground layer 13, and the second ground layer 15 are connected by a lamination process.

[0117] Optionally, the signal layer 11, the first ground layer 13, and the second ground layer 15 can be connected by PCB (Printed Circuit Board) lamination process or by LTCC (Low Temperature Co-fired Ceramic) lamination process.

[0118] Optionally, the first grounding layer 13 and the second grounding layer 15 can be processed by drilling to generate a metal grounding hole 141.

[0119] Optionally, the first ground layer 13 can be processed by electroplating to generate the second metal coupling patch 112, and the second ground layer 15 can be processed by electroplating to generate the resonator 152.

[0120] In this embodiment, the bandpass filter structure is compressed using a lamination process, effectively reducing the overall size of the bandpass filter. Furthermore, the lamination process is unaffected by the complex structure of the bandpass filter, allowing for flexible integration into various structurally complex devices.

[0121] In one embodiment, such as Figure 7 As shown, a schematic diagram of the bandpass filter 01 is provided, consisting of... Figure 7 As can be seen, the bandpass filter 01 has a multi-layer panel structure, with the microstrip line 111 of the signal layer 11 and the second metal coupling patch 112 located above the first dielectric layer 121.

[0122] In one embodiment, a bandpass filter is provided; see [link to relevant documentation]. Figures 8-11 The structure of the bandpass filter is explained below:

[0123] Figure 8 This is a top view of a bandpass filter, by Figure 8 It can be seen that the second gap in the second metal coupling patch is a curved gap. Figure 8 The dimension markings and dimensional data are shown in Table 1. Table 1 is the dimension table corresponding to the top view of the bandpass filter. All dimensions in Table 1 are in millimeters (mm).

[0124] Table 1

[0125]

[0126] In Table 1, W1 represents the width of the first dielectric layer (i.e., the width of the bandpass filter), which is 15 mm; W2 represents the width of the second metal coupling patch, which is 4.8 mm; W3 represents the width of the microstrip line, which is 1.2 mm; L1 represents the length of the first dielectric layer (i.e., the length of the bandpass filter), which is 30 mm; L2 represents the length of the second metal coupling patch (including the width of the second gap), which is 4.8 mm; and S1 represents the width of the second gap between the second metal coupling patches, which is 0.2 mm.

[0127] Figure 9 This is a side view of the bandpass filter and its amplification section, constructed from... Figure 9 As can be seen, the microstrip line consists of three layers: upper, middle, and lower. H1 represents the thickness of the upper layer, H2 the thickness of the middle layer, and H3 the thickness of the lower layer. Figure 9 The dimension markings and dimensional data are shown in Table 2. Table 2 is a dimension table corresponding to the side view of the bandpass filter. All dimensions in Table 2 are in millimeters (mm).

[0128] Table 2

[0129]

[0130] In Table 2, the thickness of the upper layer of the microstrip line is 0.5 mm, the thickness of the middle layer of the microstrip line is 0.2 mm, and the thickness of the bottom layer of the microstrip line is 0.5 mm.

[0131] Figure 10 This is a top view of the first grounding layer, by Figure 10 It can be seen that the first grounding layer includes three rows of metal grounding holes and a first metal coupling patch. The second gap in the first metal coupling patch is a curved gap, and the first metal coupling patch is located within the isolation frame on the surface of the first grounding layer. Figure 10 The dimension markings and data are shown in Table 3. Table 3 is a dimension table corresponding to the first ground layer in the bandpass filter. All dimensions in Table 3 are in millimeters (mm).

[0132] Table 3

[0133]

[0134] In Table 3, L3 represents the length of the first metal coupling patch, which is 4.8 mm; L4 represents the length of the isolation frame in the first grounding layer where the first metal coupling patch is placed, which is 7.3 mm; W4 represents the width of the first metal coupling patch, which is 4.8 mm; W5 represents the width of the isolation frame in the first grounding layer where the first metal coupling patch is placed, which is 7.3 mm; and S2 represents the width of the first gap between the first metal coupling patches, which is 0.2 mm.

[0135] Figure 11 This is a top view of the second grounding layer, by Figure 11 It can be seen that the second grounding layer includes three rows of metal grounding holes and a resonator, and the resonator includes two concentric metal rectangles. Figure 11 The dimension markings and data are shown in Table 4. Table 4 is a dimension table for the second ground layer in the bandpass filter. All dimensions in Table 4 are in millimeters (mm).

[0136] Table 4

[0137]

[0138] In Table 4, L5 and W6 represent the length and width of the inner resonant rectangle closest to the center in the two concentric resonant rings of the resonator, both of which are 3.6 mm. L6 and W7 represent the length and width of the outer resonant rectangle furthest from the center in the two concentric resonant rings of the resonator, both of which are 4.8 mm. S3 represents the gap width between the two concentric resonant rings of the resonator, which is 0.2 mm. ds represents the interval between two adjacent metal grounding holes in each row of metal grounding holes, which is 0.75 mm. D represents the total width of the three rows of metal grounding holes in the second grounding layer, which is 2.5 mm.

[0139] In one embodiment, to verify the filtering performance of the bandpass filter, the loss parameters of the bandpass filter operating in the frequency band of 2.63 GHz to 4.74 GHz were analyzed, and the loss curve of the bandpass filter is shown below. Figure 12 As shown. In Figure 12 In the graph, the horizontal axis represents the operating frequency of the bandpass filter in GHz, and the vertical axis represents the loss of the bandpass filter in dB; line 1 represents the return loss curve of the bandpass filter, and line 2 represents the insertion loss curve of the bandpass filter. Figure 9 As can be seen from line 1, within the operating frequency band, the return loss of the bandpass filter provided in this embodiment is ≤-15dB. From Figure 9 As can be seen from line 2, within the operating frequency band, the insertion loss of the bandpass filter provided in this application embodiment is ≤0.66dB. That is, the bandpass filter provided in this application embodiment has low loss within the operating frequency band.

[0140] In another embodiment, this application provides a filter frequency modulation method applied to a bandpass filter, such as... Figure 13 As shown, the method includes the following steps:

[0141] S1301. Determine the number and location information of the metal probes based on the bandwidth of the bandpass filter.

[0142] S1302. Adjust the filtering frequency band of the signal by adjusting the quantity and position information of the metal probes.

[0143] Specifically, a pre-set program command for filter frequency modulation can be implemented. Upon receiving this command, the control device executes the corresponding operation: based on a pre-defined correspondence between bandwidth and metal probes, it determines the number and position of the metal probes according to the bandwidth of the bandpass filter. After determining the number and position of the metal probes, the control device can continue to execute the pre-set program command to adjust the corresponding number of metal probes to their corresponding positions, activating the bandpass filter and thus achieving the desired filtering frequency band.

[0144] According to the embodiments of this application, the number and position information of metal probes are determined based on the bandwidth of the bandpass filter, and the number and position information of metal probes are adjusted so that the filtering frequency band of the signal by the bandpass filter is in a preset frequency band.

[0145] It is understood that the above process is implemented through computer program instructions, which are provided to the processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing device, so that the instructions executed by the processor of the computer or other programmable data processing device can implement the filter frequency modulation method of this embodiment. Of course, these computer program instructions may also be stored in a computer-readable storage medium that can direct the computer or other programmable data processing device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means. Alternatively, these computer program instructions may also be loaded onto a computer or other programmable data processing device, causing a series of operational steps to be performed on the computer or other programmable device to produce a computer-implemented process, thereby executing the computer program instructions on the computer or other programmable device to achieve the above-described function.

[0146] In addition, this application also provides a frequency modulation device, which includes a memory and a processor. The memory stores a computer program, which enables the processor to implement the steps of the filter frequency modulation method provided in the above embodiments when executing the computer program.

[0147] Those skilled in the art will understand that implementing all or part of the processes in the methods of the above embodiments can be accomplished by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical storage, etc. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.

[0148] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0149] The above embodiments are merely illustrative of several implementation methods of this application, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A bandpass filter, characterized in that, The bandpass filter includes a signal layer, a first ground layer, and a second ground layer arranged from top to bottom; the signal layer and the first ground layer are coupled together through a first dielectric unit; the first ground layer and the second ground layer are coupled together through a second dielectric unit, and a metal probe penetrating the second dielectric unit is provided between the first ground layer and the second ground layer. The first ground layer includes a first ground plane and a first metal coupling patch; the second ground layer includes a second ground plane and a resonator etched on the second ground plane; the second dielectric unit includes a metal grounding via; the metal probe passes through the metal grounding via to short-circuit the first metal coupling patch and the resonator. The signal layer includes a microstrip line and a second metal coupling patch, and the microstrip line and the second metal coupling patch constitute a composite left- and right-handed transmission line unit structure. The second metal coupling patch is connected to the first metal coupling patch through the first dielectric unit; The number and position of the metal probes are used to adjust the filtering frequency band of the signal by the bandpass filter.

2. The bandpass filter according to claim 1, characterized in that, The first metal coupling patch includes two metal patches with a first gap between them, and the two metal patches are capacitively coupled through the first gap.

3. The bandpass filter according to claim 1, characterized in that, The size of the resonator is determined based on the operating bandwidth of the bandpass filter.

4. The bandpass filter according to any one of claims 1-3, characterized in that, The microstrip line includes a first microstrip line and a second microstrip line; the second metal coupling patch includes a first metal patch and a second metal patch, and there is a second gap between the first metal patch and the second metal patch, and the first metal patch and the second metal patch are capacitively coupled through the second gap; One end of the first microstrip line is a signal receiving end, and the other end is connected to one end of the first metal patch; one end of the second microstrip line is connected to one end of the second metal patch, and the other end of the second microstrip line is a signal output end.

5. The bandpass filter according to any one of claims 1-3, characterized in that, The difference between the size of the first metal coupling patch and the size of the second metal coupling patch is within a preset range.

6. The bandpass filter according to any one of claims 1-3, characterized in that, The first dielectric unit includes a first dielectric layer and a second dielectric layer; the first dielectric layer is located below the signal layer and above the second dielectric layer.

7. The bandpass filter according to any one of claims 1-3, characterized in that, The signal layer, the first ground layer, and the second ground layer are all made of metallic materials, and the first dielectric unit and the second dielectric unit are both made of insulating materials.

8. The bandpass filter according to any one of claims 1-3, characterized in that, The signal layer, the first ground layer, and the second ground layer are connected by a lamination process.

9. A filter frequency modulation method, characterized in that, The method, applied to the bandpass filter according to any one of claims 1-8, comprises: Based on the bandwidth of the bandpass filter, determine the number and location information of the metal probes; By adjusting the number and position information of the metal probes, the filtering frequency band of the bandpass filter for the signal can be adjusted.

10. A frequency modulation device, characterized in that, The frequency modulation device includes a memory and a processor, the memory storing a computer program, characterized in that the processor executes the computer program to implement the steps of the method of claim 9.

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