Method for preparing two-dimensional layered arsenic-antimony material

Abstract

The application provides a two-dimensional layered arsenic-antimony material, comprising the following steps: S1, providing an arsenic-antimony layered alloy; S2, wet-milling the arsenic-antimony layered alloy and a first organic dispersant in an oxygen-free and water-free environment to obtain a mixture; adding a second organic dispersant to the mixture to perform liquid-phase exfoliation, and obtaining the two-dimensional layered arsenic-antimony material. The method is simple and easy to operate, and has low cost. A large amount of two-dimensional layered arsenic-antimony material can be obtained at low cost through the preparation method. The method fills the gap of the preparation technology of the two-dimensional layered arsenic-antimony material, solves the problems of low preparation yield and high preparation cost of the two-dimensional material in the prior art, realizes efficient preparation of the two-dimensional layered arsenic-antimony material, and the obtained two-dimensional layered arsenic-antimony material has wide application prospect.

Description

Technical Field

[0001] This invention relates to the fields of nanomaterial preparation and materials science and engineering, and particularly to a method for preparing a two-dimensional layered arsenic-antimony material. Background Technology

[0002] In recent years, graphene-like two-dimensional materials have attracted widespread research attention as emerging materials in nanoelectronics due to their outstanding properties. For example, graphene, silicene, boron nitride nanosheets, transition metal dichalcogenides (TMDs), and black phosphorus are two-dimensional layered materials that can exhibit a variety of electronic properties, including metallic, semiconductor, superconducting, and even topological insulator properties with extremely high mobility.

[0003] Research has found that when the thickness of antimonyene is reduced to one atomic layer, it transforms into an indirect bandgap semiconductor with a bandgap value as high as 2.28 eV. Further application of minute stress can transform it into a direct bandgap semiconductor. Therefore, it is predicted that two-dimensional antimony arsenide materials will possess unique semiconductor properties: a bandgap size similar to antimonyene, the ability to achieve indirect and direct bandgap transformation, band inversion characteristics of topological insulators, and stronger spin-orbit coupling effects.

[0004] The preparation of two-dimensional layered arsenic-antimony materials is currently a technological gap in this field. The preparation of two-dimensional materials typically suffers from low yield and high cost, making it impossible to achieve efficient and high-quality preparation of two-dimensional layered arsenic-antimony materials. Summary of the Invention

[0005] The main objective of this invention is to provide a two-dimensional layered arsenic-antimony material, aiming to solve the problems of low yield and high preparation cost of two-dimensional layered arsenic-antimony materials in existing technologies.

[0006] To achieve the above objectives, the present invention provides a two-dimensional layered arsenic-antimony material, comprising the following steps:

[0007] S1, providing an arsenic-antimony layered alloy; S2, wet milling the arsenic-antimony layered alloy and a first organic dispersant in an oxygen-free and water-free environment to obtain a mixture; adding a second organic dispersant to the mixture for liquid-phase exfoliation to obtain the two-dimensional layered arsenic-antimony material.

[0008] Further, in step S1, the arsenic-antimony layered alloy is obtained by mixing elemental arsenic and elemental antimony, annealing them in a closed protective gas atmosphere, and then cooling them to obtain the arsenic-antimony layered alloy.

[0009] Furthermore, the molar ratio of elemental arsenic to elemental antimony is 1 to 2:1.

[0010] Furthermore, the annealing treatment includes: holding the reaction vessel at 650-750°C for 30-60 minutes, raising the temperature to 800-900°C for 30-60 minutes, then cooling it down for 30-60 minutes before allowing it to cool naturally to room temperature.

[0011] Furthermore, the mass-to-volume ratio of the arsenic-antimony layered alloy to the first organic dispersant is 100 mg: 3-5 mL.

[0012] Further, the mass-to-volume ratio of the arsenic-antimony layered alloy to the second organic dispersant is 100 mg:((80~400)-x) mL; where x is the amount of the first organic dispersant added, x = 3~5 mL.

[0013] Furthermore, the first organic dispersant and the second organic dispersant are one or more of NMP, DMF, acetone, dimethyl sulfoxide, and methanol, respectively.

[0014] Furthermore, the mixture is a uniform powder with a flake-like morphology and a particle size of 0.5 to 1 mm.

[0015] Furthermore, the liquid phase stripping method involves ultrasonically breaking down the mixture after adding the second organic dispersant; the duration of the ultrasonic breaking down is 2 to 4 hours; and the power of the ultrasonic breaking down is 100 to 200 W.

[0016] Furthermore, the liquid phase stripping process further includes centrifugation and filtration to obtain the two-dimensional layered arsenic-antimony material; wherein the centrifugation speed is 3000-6000 rpm / min; and the centrifugation time is 10-20 min.

[0017] The beneficial effects achieved by this invention are as follows:

[0018] The method for preparing two-dimensional layered arsenic-antimony materials provided by this invention involves only wet milling and liquid-phase exfoliation of a mixture of arsenic-antimony layered alloy and organic dispersant. This method is simple, easy to operate, and low-cost, allowing for the production of large quantities of two-dimensional layered arsenic-antimony materials at low cost. It fills a gap in the preparation technology of two-dimensional layered arsenic-antimony materials, solves the problems of low yield and high cost in existing two-dimensional material preparation technologies, and achieves efficient preparation of two-dimensional layered arsenic-antimony materials. The obtained two-dimensional layered arsenic-antimony materials have broad application prospects. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0020] Figure 1 This is a schematic flowchart of the preparation method of this application;

[0021] Figure 2 This is a transmission electron microscope image of the two-dimensional layered arsenic-antimony material prepared in Example 1 of this application;

[0022] Figure 3 This is a transmission electron microscope image of the two-dimensional layered arsenic-antimony material prepared in Example 2 of this application;

[0023] Figure 4 This is a transmission electron microscope image of the two-dimensional layered arsenic-antimony material prepared in Example 3 of this application;

[0024] Figure 5 XRD comparison diagrams of materials with different arsenic-antimony molar ratios prepared in Comparative Example 1 of this application;

[0025] Figure 6 The XRD comparison diagrams are of materials with different annealing and cooling times prepared in Comparative Example 2 of this application.

[0026] The realization of the objective, functional characteristics and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] It should be noted that, unless otherwise specified, the following embodiments and features can be combined with each other. It should also be understood that the terminology used in the embodiments of this invention is for describing specific implementations and not for limiting the scope of protection of this invention.

[0029] Unless otherwise defined, all technical and scientific terms used in this invention are consistent with the prior art known to those skilled in the art and the description of this invention. This invention can also be implemented using any prior art methods, devices, and materials similar to or equivalent to those described, used, or made of materials in the embodiments of this invention. It should be understood by those skilled in the art that, as an explanation of this application, without affecting the actual understanding of the technical solutions of this application, "intensity" can represent intensity, "2θ" can represent twice the diffraction angle, "AsSb" can represent arsenic-antimony alloy, "As" can represent metallic arsenic, "NMP" is N-methylpyrrolidone, and "DMF" can represent N,N-dimethylformamide.

[0030] When numerical ranges are given in the examples, it should be understood that, unless otherwise stated in the invention, both endpoints of each range and any value between the two endpoints may be used. Test methods in the following examples that do not specify specific conditions are generally performed under conventional conditions or as recommended by the respective manufacturers. Unless otherwise specified, all materials or reagents required in the following examples are commercially available.

[0031] To address the problems of low yield and high preparation cost in existing technologies for preparing two-dimensional layered arsenic-antimony materials, this invention provides a two-dimensional layered arsenic-antimony material, comprising the following steps:

[0032] S1, providing an arsenic-antimony layered alloy; S2, wet milling the arsenic-antimony layered alloy and a first organic dispersant in an oxygen-free and anhydrous environment to obtain a mixture; adding a second organic dispersant to the mixture for liquid-phase exfoliation to obtain a two-dimensional layered arsenic-antimony material. Adding a portion of the organic dispersant for wet milling before liquid-phase exfoliation allows the layered structure of the arsenic-antimony layered alloy to cleave and separate along the same direction, resulting in a mixture with uniform particle size. This reduces the difficulty of liquid-phase exfoliation and improves its exfoliation efficiency.

[0033] The flowchart of the above preparation method is shown below. Figure 1 As shown; where "NMP" stands for N-methylpyrrolidone. This method is simple to operate, low in cost, and can produce large quantities of low-cost, layered arsenic-antimony materials. It fills the gap in the preparation technology of two-dimensional layered arsenic-antimony materials, solves the problems of low yield and high cost in existing two-dimensional material preparation technologies, and achieves efficient preparation of two-dimensional layered arsenic-antimony materials. The obtained two-dimensional layered arsenic-antimony materials have broad application prospects.

[0034] Further, in step S1, the arsenic-antimony layered alloy is obtained by mixing elemental arsenic and elemental antimony, annealing them in a closed protective gas atmosphere, and then cooling them to obtain the arsenic-antimony layered alloy.

[0035] Specifically, the reaction vessel can be a high-purity quartz tube, such as one with an inner diameter of 16 mm, a wall thickness of 1.5 mm, and a reaction volume of approximately 0.04 L. Elemental arsenic and elemental antimony can be mixed and placed in the high-purity quartz tube. An inert gas or nitrogen gas is introduced to a pressure of 10–30 kPa, followed by vacuuming. This process is repeated three times to complete the inert gas or nitrogen cleaning, after which a vacuum is applied to below 100 Pa, and the high-purity quartz tube is sealed. Alternatively, after inert gas or nitrogen cleaning, an inert gas or nitrogen gas is introduced for protection, and the high-purity quartz tube is then sealed.

[0036] Furthermore, the molar ratio of elemental arsenic to elemental antimony is 1–2:1. Experiments have shown that only when the molar ratio of arsenic to antimony is 1–2:1 can a high-purity layered arsenic-antimony alloy be synthesized. Synthetic products outside this ratio range have poor crystal quality and contain impurities.

[0037] Furthermore, the annealing treatment includes: holding the reaction vessel at 650-750°C for 30-60 minutes, raising the temperature to 800-900°C for a second holding for 30-60 minutes, then cooling it down for 30-60 minutes before allowing it to cool naturally to room temperature.

[0038] Specifically, the high-purity quartz tube can be placed in a dual-temperature zone reactor, rapidly heated to 650–750°C at a heating rate of 1°C / min, and held for 30–60 min; then heated to 800–900°C at a heating rate of 1°C / min and held for 30–60 min; then cooled to room temperature naturally at a cooling rate of 5–10°C / min for 30–60 min.

[0039] It should be noted that the complete sublimation temperature of metallic arsenic at room temperature and pressure is 613℃, and the sublimation temperature of metallic antimony is 1635℃. Experiments have shown that rapidly heating to 650–750℃ at a heating rate of 1℃ / min and holding at that temperature for 30–60 min can completely vaporize arsenic. Further heating to 800–900℃ at a rate of 1℃ / min and holding at that temperature for 30–60 min can bring antimony to an intermediate state of partial melting and partial vaporization.

[0040] Subsequent cooling at a rate of 5–10 °C / min for 30–60 min allows arsenic and antimony atoms to slowly condense and crystallize, fully undergoing a bonding reaction to obtain a layered arsenic-antimony alloy with better crystal quality.

[0041] After the high-purity quartz tube is cooled to room temperature, an inert gas is introduced into the tube to balance the internal pressure to atmospheric pressure. The high-purity quartz tube is then removed from the dual-temperature zone reactor and transferred to a glove box to break the tube, from which the resulting arsenic-antimony layered alloy is extracted.

[0042] Furthermore, the mass-to-volume ratio of the arsenic-antimony layered alloy to the first organic dispersant is 100 mg: 3–5 mL.

[0043] Specifically, 3–5 ml of the first organic dispersant is added to every 100 mg of arsenic-antimony layered alloy for wet milling; and the mixture is milled uniformly in the same direction until it is ground into a uniform powder with a flake-like morphology of 0.5–1 mm. Within this particle size range, the structure of the arsenic-antimony layered alloy remains relatively intact after wet milling, which is beneficial for maintaining its microstructure and helps to ensure the integrity of the subsequent liquid phase exfoliation product.

[0044] Furthermore, the mass-to-volume ratio of the arsenic-antimony layered alloy to the second organic dispersant is 100 mg:((80~400)-x) mL; where x is the amount of the first organic dispersant added, x=3~5 mL.

[0045] Specifically, a second organic dispersant is added to the above-mentioned uniform powder for liquid-phase exfoliation. The sum of the amounts of the first and second organic dispersants added is 80–400 mL per 100 mg of arsenic-antimony layered alloy. The first and second organic dispersants can be the same or different organic dispersants.

[0046] Furthermore, the first organic dispersant and the second organic dispersant are one or more of NMP, DMF, acetone, dimethyl sulfoxide, and methanol, respectively.

[0047] Furthermore, the mixture is a uniform powder with a flake-like morphology and a particle size of 0.5 to 1 mm.

[0048] Furthermore, the liquid phase stripping method involves ultrasonically breaking down the mixture after the addition of the second organic dispersant; the duration of ultrasonic breaking down is 2–4 hours; and the power of ultrasonic breaking down is 100–200 W.

[0049] Specifically, an ultrasonic disruptor can be used to ultrasonically disrupt the mixture after adding the second organic dispersant. The operating parameters of the ultrasonic disruptor can be set as follows: working time 2-4 hours, with a 3-6 second working interval followed by a 12-24 second rest period; power 100-200W. An ultrasonic working time of 2-4 hours and a power of 100-200W are necessary for effective dissection. Too short a time or too low a power will not achieve the desired dissection effect, while too long a time or too high a power will result in overly fragmented material with small size and poor morphology. The 3-6 second working interval followed by a 12-24 second rest period prevents the instrument from overheating during prolonged operation, which could affect the condition of both the instrument and the material.

[0050] Furthermore, after liquid phase stripping, centrifugation and filtration are also performed to obtain two-dimensional layered arsenic-antimony material; wherein, the centrifugation speed is 3000-6000 rpm / min; and the centrifugation time is 10-20 min.

[0051] Specifically, the product after liquid phase stripping is centrifuged for 10–20 min at a rotation speed of 3000–6000 rpm. Two-thirds of the supernatant of the centrifuged product is taken to obtain a dispersion containing two-dimensional layered arsenic-antimony material; it can be further filtered to obtain the two-dimensional layered arsenic-antimony material.

[0052] To further illustrate the present invention, the following examples are provided:

[0053] Example 1

[0054] 1) 100 mg of elemental arsenic (chemical formula As, 99.999%) and elemental antimony (chemical formula Sb, 99.99%) were added to a reaction vessel (high-purity quartz tube, inner diameter 16 mm, wall thickness 1.5 mm, reaction volume approximately 0.04 L), with a total mass of 100 mg. The molar ratio of As:Sb was 1:1.

[0055] 2) After evacuating the reaction vessel using a vacuum sealing machine (below 300 Pa), introduce inert gas Ar to a pressure of 10-30 kPa, then evacuate again. Repeat this cycle of Ar gas purification three times, followed by evacuation (below 100 Pa), and then seal the tube. Place the reactor in a dual-temperature zone furnace, turn on the dual-temperature zone reactor, and rapidly heat the vessel (heating rate 1℃ / min) to 650℃ and hold for 30 min. Continue heating at a rate of 1℃ / min to 800℃ and maintain the vessel temperature at 800℃ for 30 min. Then, cool down at a rate of 5℃ / min for 30 min and allow it to cool naturally. After the furnace temperature drops to room temperature, introduce inert gas to balance the internal pressure of the vessel to atmospheric pressure. Use a tube furnace hook to remove the quartz tube, then transfer it to a glove box to break the tube and remove the product.

[0056] 3) The prepared arsenic-antimony layered alloy block was ground in a mortar with 3 ml of NMP added for wet grinding, resulting in a uniform coarse powder with a flake-like morphology (approximately 1 mm in size). 10 mg of the above arsenic-antimony layered alloy powder was weighed and added to a 50 ml centrifuge tube along with NMP. The total ratio of NMP to arsenic-antimony layered alloy was 80 ml of organic dispersant per 100 mg of arsenic-antimony layered alloy. The centrifuge tube was then connected to an ultrasonic disruptor for ultrasonic-assisted liquid-phase exfoliation. The parameters were set as follows: working time 2 hours, 3-second work interval followed by a 12-second rest interval, and power 130 W.

[0057] 4) Centrifuge the obtained dispersion at 3000 rpm for 10 minutes. After centrifugation, take about 2 / 3 of the supernatant to obtain the dispersion of the arsenic-antimony two-dimensional layered material. The transmission electron microscope image of the two-dimensional arsenic-antimony layered material obtained in this embodiment is shown below. Figure 2 As shown.

[0058] Example 2

[0059] 1) 100 mg of elemental arsenic (chemical formula As, 99.999%) and elemental antimony (chemical formula Sb, 99.99%) were added to a reaction vessel (high-purity quartz tube, inner diameter 16 mm, wall thickness 1.5 mm, reaction volume approximately 0.04 L), with a total mass of 100 mg. The molar ratio of As:Sb was 1:0.5.

[0060] 2) After evacuating the reaction vessel using a vacuum sealing machine (below 300 Pa), introduce inert gas Ar to a pressure of 10-30 kPa, then evacuate again. Repeat this cycle of Ar gas purification three times, followed by evacuation (below 100 Pa), and then seal the tube. Place the reactor in a dual-temperature zone furnace, turn on the dual-temperature zone reactor, and rapidly heat the vessel (heating rate 2℃ / min) to 750℃ and hold for 60 min. Continue heating at a rate of 2℃ / min to 900℃ and maintain the vessel temperature at 900℃ for 60 min. Then, cool down at a rate of 10℃ / min for 60 min and allow it to cool naturally. After the furnace temperature drops to room temperature, introduce inert gas to balance the internal pressure of the vessel to atmospheric pressure. Use a tube furnace hook to remove the quartz tube, then transfer it to a glove box to break the tube and remove the product.

[0061] 3) The prepared arsenic-antimony layered alloy block was ground in a mortar with 5 ml of DMF added for wet grinding, resulting in a uniform coarse powder with a flake-like morphology (approximately 1 mm in size). 10 mg of the above arsenic-antimony layered alloy powder was weighed and added to a 50 ml centrifuge tube along with DMF. The total ratio of DMF to arsenic-antimony layered alloy was 400 ml of organic dispersant per 100 mg of arsenic-antimony layered alloy. The centrifuge tube was then connected to an ultrasonic disruptor for ultrasonic-assisted liquid-phase exfoliation. The parameters were set as follows: working time 4 hours, 6-second working interval followed by a 24-second rest interval, and power 180 W.

[0062] 4) Centrifuge the obtained dispersion at 6000 rpm for 20 minutes. After centrifugation, take about 2 / 3 of the supernatant to obtain the dispersion of the arsenic-antimony two-dimensional layered material. The transmission electron microscope image of the two-dimensional arsenic-antimony layered material obtained in this embodiment is shown below. Figure 3 As shown.

[0063] Example 3

[0064] 1) 100 mg of elemental arsenic (chemical formula As, 99.999%) and elemental antimony (chemical formula Sb, 99.99%) were added to a reaction vessel (high-purity quartz tube, inner diameter 16 mm, wall thickness 1.5 mm, reaction volume approximately 0.04 L), with a total mass of 100 mg. The molar ratio of As:Sb was 1:0.8.

[0065] 2) After evacuating the reaction vessel using a vacuum sealing machine (below 300 Pa), introduce inert gas Ar to a pressure of 10-30 kPa, then evacuate again. Repeat this cycle of Ar gas purification three times, followed by evacuation (below 100 Pa), and then seal the tube. Place the reactor in a dual-temperature zone furnace, turn on the dual-temperature zone reactor, and rapidly heat the vessel (heating rate 1℃ / min) to 700℃, hold for 60 min, continue heating at a rate of 1℃ / min to 850℃, maintain the vessel temperature at 850℃ for 45 min, then cool down at a rate of 7℃ / min for 45 min, and allow it to cool naturally. After the furnace temperature drops to room temperature, introduce inert gas to balance the internal pressure of the vessel to atmospheric pressure. Use a tube furnace hook to remove the quartz tube, then transfer it to a glove box to break the tube and remove the product.

[0066] 3) The prepared arsenic-antimony layered alloy block was ground in a mortar with 4 ml of acetone added for wet grinding, resulting in a uniform coarse powder with a flake-like morphology (approximately 1 mm in size). 10 mg of the above arsenic-antimony layered alloy powder was weighed and added to a 50 ml centrifuge tube along with acetone. The total ratio of acetone to arsenic-antimony layered alloy was 200 ml of organic dispersant per 100 mg of arsenic-antimony layered alloy. The centrifuge tube was then connected to an ultrasonic disruptor for ultrasonic-assisted liquid-phase exfoliation. The parameters were set as follows: working time 3 hours, 3 seconds of work followed by a 12-second rest, and power 150 W.

[0067] 4) Centrifuge the obtained dispersion at 5000 rpm for 15 minutes. After centrifugation, take about 2 / 3 of the supernatant to obtain the dispersion of the two-dimensional layered material containing arsenic and antimony. The transmission electron microscope image of the two-dimensional layered arsenic and antimony product obtained in this embodiment is shown below. Figure 4 As shown.

[0068] Comparative Example 1

[0069] Based on Example 1, with other conditions remaining unchanged, only the molar ratio (elemental arsenic and elemental antimony) in step 1) is changed:

[0070] That is, As:Sb=4:1; As:Sb=8:1, As:Sb=1:2.

[0071] The XRD patterns of the final products obtained from the three ratios are shown below. Figure 5 As shown.

[0072] from Figure 5 It can be seen from this that when As:Sb = 4:1; As:Sb = 8:1 and As:Sb = 1:2, the ratio is similar to... Figure 5The XRD peaks of the AsSb standard PDF card at the bottom were significantly shifted to the right; and the comparison with the As standard PDF card revealed the presence of As phase impurities, indicating the presence of As impurities in the synthesized product.

[0073] Comparative Example 2

[0074] Based on Example 1, with all other conditions remaining unchanged, only the cooling time in the annealing temperature program control in step 1) is changed:

[0075] That is, "cool down at a rate of 5℃ / min for 30 minutes and then let it cool naturally" should be changed to "cool down at a rate of 5℃ / min for 20 minutes and then let it cool naturally", "cool down at a rate of 5℃ / min for 80 minutes and then let it cool naturally", and "cool down at a rate of 5℃ / min for 120 minutes and then let it cool naturally".

[0076] The XRD patterns of the final products obtained with three different cooling times are shown below. Figure 6 As shown.

[0077] from Figure 6 It can be seen that when the cooling time is 20 min, 80 min, and 120 min, compared with... Figure 6 The XRD peaks of the AsSb standard PDF card at the bottom were significantly shifted to the left, indicating that the crystal structure of the synthesized product phase had changed and that a standard arsenic-antimony alloy could not be synthesized.

[0078] In summary, the above-described technical solutions of the present invention are merely preferred embodiments of the present invention and do not limit the patent scope of the present invention. All equivalent structural transformations made using the contents of the present invention's specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A method for producing a two-dimensional layered arsenic-antimony material, characterized by, Including the following steps: S1. Provides arsenic-antimony layered alloys; S2. The arsenic-antimony layered alloy and the first organic dispersant are wet-milled in an oxygen-free and water-free environment to obtain a mixture; a second organic dispersant is added to the mixture for liquid-phase exfoliation to obtain the two-dimensional layered arsenic-antimony material; In step S1, the source of the arsenic-antimony layered alloy includes mixing elemental arsenic and elemental antimony and placing them in a reaction vessel, annealing them in a closed protective gas atmosphere, and cooling them to obtain the arsenic-antimony layered alloy. The molar ratio of elemental arsenic to elemental antimony is 1 to 2:1; The annealing process includes: holding the reaction vessel at 650-750°C for 30-60 minutes, raising the temperature to 800-900°C for 30-60 minutes, cooling it down for 30-60 minutes, and then allowing it to cool naturally to room temperature. The mixture is a uniform powder with a flaky morphology and a particle size of 0.5 to 1 mm; The mass-to-volume ratio of the arsenic-antimony layered alloy to the first organic dispersant is 100 mg: 3-5 mL; The mass-to-volume ratio of the arsenic-antimony layered alloy to the second organic dispersant is 100 mg:((80~400)-x) mL; where x is the amount of the first organic dispersant added, x = 3~5 mL.

2. The method for preparing the two-dimensional layered arsenic-antimony material according to claim 1, characterized in that, The first organic dispersant and the second organic dispersant are one or more of NMP, DMF, acetone, dimethyl sulfoxide, and methanol, respectively.

3. The method for preparing the two-dimensional layered arsenic-antimony material according to claim 1, characterized in that, The liquid phase stripping method involves ultrasonically breaking down the mixture after adding the second organic dispersant. The duration of the ultrasonic fragmentation is 2 to 4 hours; the power of the ultrasonic fragmentation is 100 to 200 W.

4. The method for preparing the two-dimensional layered arsenic-antimony material according to claim 1, characterized in that, The liquid phase stripping process further includes centrifugation and filtration to obtain the two-dimensional layered arsenic-antimony material. The centrifugation speed is 3000-6000 rpm; the centrifugation time is 10-20 min.

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