A UV photoresist and a method for patterning UV photoresist

Abstract

This invention relates to a UV photoresist and a method for patterning the UV photoresist. The UV photoresist comprises an organic solvent, a photosensitizer, and zirconium oxide nanoclusters, wherein the general chemical formula of the zirconium oxide nanoclusters is Zr. x O y (OH) z L m Where 2≤x≤20, 2≤y≤40, 0≤z≤40, 4≤m≤40, and L is an organic ligand containing a carboxyl group. The photosensitizer has the following structure, where R... 1 R is an alkyl-substituted or unsubstituted furanyl vinyl or benzodioxolane group. 2 and R 3 Each occurrence is independently selected from -F, -Cl, -Br, or -I.

Description

Technical Field

[0001] This invention relates to the field of photoresist technology, and more specifically, to an ultraviolet photoresist and a method for patterning ultraviolet photoresist. Background Technology

[0002] Currently, ultra-large-scale integrated circuits (ULSIs) in the semiconductor industry are all manufactured using photolithography technology. The resolution and linewidth of photolithography directly determine the integration density, yield, and cost of integrated circuits. Photolithography is a micro-nano fabrication technology that utilizes the change in solubility of photoresist under an exposure beam to transfer patterns from a photomask to an exposure substrate. Photoresist is a type of mixed material sensitive to light or radiation. Currently, ultraviolet photoresist mainly consists of film-forming resin, photosensitizer, solvent, and other additives, with the film-forming resin being the main component.

[0003] Currently commercially available ultraviolet photoresists are photosensitive materials that are mainly based on polymer compounds as film-forming resins. They require a large exposure dose and have low sensitivity during use. Summary of the Invention

[0004] Based on this, the present invention provides a UV photoresist with low exposure dose and high sensitivity, and a method for patterning UV photoresist.

[0005] In one aspect, this invention provides an ultraviolet photoresist comprising an organic solvent, a photosensitizer, and zirconium oxide nanoclusters, wherein the general chemical formula of the zirconium oxide nanoclusters is Zr. x O y (OH) z L m , where 2≤x≤20, 2≤y≤40, 0≤z≤40, 4≤m≤40, and L is an organic ligand containing a carboxyl group;

[0006] The photosensitizer has the following structure:

[0007]

[0008] Among them, R 1 Selected from

[0009] Any one of them, * represents the connection site, R 2 and R 3 Each occurrence is independently selected from -F, -Cl, -Br, or -I.

[0010] Optionally, as described above, the ultraviolet photoresist, R 2 and R 3 All are -Cl.

[0011] Optionally, the ultraviolet photoresist described above may contain at least one of the following: an acrylic acid ligand, a methacrylic acid ligand, a 1-hydroxy-2-naphthoic acid ligand, and a salicylic acid ligand.

[0012] Optionally, in the ultraviolet photoresist described above, the mass percentage of zirconium oxide nanoclusters in the organic solvent is 0.5% to 15%, and the mass percentage of photosensitizer is 0.001% to 1%.

[0013] Optionally, the organic solvent in the ultraviolet photoresist described above includes at least one of ethyl lactate, anisole, propylene glycol monomethyl ether acetate, methyl isobutyl ketone, and isopropanol.

[0014] In another aspect, the present invention also provides a method for ultraviolet photoresist patterning, comprising the following steps:

[0015] The ultraviolet photoresist described above is spin-coated onto the substrate and then dried to form an ultraviolet photoresist film;

[0016] The ultraviolet photoresist film is exposed to ultraviolet light under a photomask and then developed in a developer to form a photolithographic pattern.

[0017] Optionally, the developer includes at least one selected from toluene, xylene, 1,2-diacetoxypropane, propylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, isopropanol, isobutanol, isoamyl alcohol, 4-methyl-2-pentanol, isopropoxyethanol, 1-methoxy-2-propanol, 1-propoxy-2-propanol, 1-butoxy-2-propanol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, propylene glycol ethyl ether, 2-heptanone, and 2-butanone.

[0018] Optionally, in the ultraviolet photoresist patterning method described above, the light source for ultraviolet lithography exposure is ultraviolet light with a wavelength of 365 nm, deep ultraviolet light with a wavelength of 254 nm, or extreme ultraviolet light with a wavelength of 13.5 nm. Further, when the light source for ultraviolet lithography exposure is deep ultraviolet light with a wavelength of 254 nm, the exposure dose is greater than or equal to 12 mJ / cm². -2 When the light source for ultraviolet lithography is 365nm wavelength ultraviolet light, the exposure dose is greater than or equal to 200mJ / cm². -2 .

[0019] The ultraviolet photoresist of this invention uses zirconia nanoclusters as the film-forming resin, with a single nanocluster size of only 1nm-5nm, far smaller than the size of polymer chains (generally greater than 20nm). Therefore, compared with traditional polymer resin-based photoresists, the ultraviolet photoresist of this invention has the potential to etch patterns with smaller linewidths. After effective matching of the zirconia nanocluster film-forming resin with the photosensitizer, the sensitivity of the ultraviolet photoresist is significantly improved, the exposure dose is significantly reduced, and the photolithography efficiency is greatly enhanced. Furthermore, the presence of metal oxides gives the photoresist excellent mechanical properties and etching resistance, and the exposed pattern hardly undergoes deformation or peeling in the subsequent development process, resulting in high pattern fidelity. Attached Figure Description

[0020] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1A and Figure 1B The exposure pattern obtained in Embodiment 1 of the present invention with an exposure wavelength of 254nm;

[0022] Figure 2A and Figure 2B The exposure pattern obtained with an exposure wavelength of 365nm in Embodiment 1 of the present invention;

[0023] Figure 3A and Figure 3B The exposure pattern obtained with an exposure wavelength of 254nm in Embodiment 2 of the present invention;

[0024] Figure 4A and Figure 4B The exposure pattern obtained with an exposure wavelength of 365nm in Embodiment 2 of the present invention;

[0025] Figure 5A and Figure 5B The exposure pattern obtained with an exposure wavelength of 254nm in Embodiment 3 of the present invention;

[0026] Figure 6A and Figure 6B The exposure pattern obtained with an exposure wavelength of 365nm in Embodiment 3 of the present invention;

[0027] Figure 7A and Figure 7B The exposure pattern obtained with an exposure wavelength of 254nm in the comparative example of this invention;

[0028] Figure 8Aand Figure 8B This is the exposure pattern obtained with an exposure wavelength of 365nm in the comparative example of this invention. Detailed Implementation

[0029] Reference will now be made to detailed embodiments of the present invention, one or more of which are described below. Each example is provided for explanation and not for limitation of the invention. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made to the invention without departing from its scope or spirit. For example, features described or illustrated as part of one embodiment may be used in another embodiment to produce further embodiments.

[0030] Therefore, this invention is intended to cover such modifications and variations falling within the scope of the appended claims and their equivalents. Other objects, features, and aspects of the invention are disclosed in or will be apparent from the following detailed description. It will be understood by those skilled in the art that this discussion is merely a description of exemplary embodiments and is not intended to limit the broader aspects of the invention.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items. The terms “comprising,” “including,” “having,” “containing,” or any other variations thereof as used herein are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises the listed elements is not necessarily limited to those elements but may include other elements not expressly listed or elements inherent to such a composition, step, method, article, or apparatus.

[0032] Unless otherwise shown or indicated in the operational embodiments, all figures used to represent the amounts, physicochemical properties, etc., of ingredients in the specification and claims are to be understood to be adjusted by the term "about" in all cases. For example, therefore, unless stated to the contrary, the numerical parameters listed in the foregoing specification and appended claims are approximations, and those skilled in the art can appropriately modify these approximations to obtain the desired characteristics by utilizing the teachings disclosed herein. The use of numerical ranges indicated by endpoints includes all numbers within that range and any range within that range; for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4, and 5, etc.

[0033] Photoresist "sensitivity" refers to the minimum light energy or minimum charge (for electron beam photoresist) incident per unit area that causes the photoresist to react completely. In this invention, the unit of photoresist sensitivity is mJ / cm². -2 The sensitivity of photoresist can also be reflected by the minimum exposure dose, which is calculated as: Exposure dose = Light intensity × Exposure time.

[0034] In one aspect, this invention provides an ultraviolet photoresist comprising an organic solvent, a photosensitizer, and zirconium oxide nanoclusters, wherein the general chemical formula of the zirconium oxide nanoclusters is Zr. x O y (OH) z L m , where 2≤x≤20, 2≤y≤40, 0≤z≤40, 4≤m≤40, and L is an organic ligand containing a carboxyl group;

[0035] The photosensitizer has the following structure:

[0036]

[0037] Among them, R 1 R is an alkyl-substituted or unsubstituted furanyl vinyl or benzodioxolane group. 2 and R 3 Each occurrence is independently selected from -F, -Cl, -Br, or -I.

[0038] The ultraviolet photoresist of this invention uses zirconia nanoclusters as the film-forming resin, with a single nanocluster size of only 1nm-5nm, far smaller than the size of polymer chains (generally greater than 20nm). Therefore, compared with traditional polymer resin-based photoresists, the ultraviolet photoresist of this invention has the potential to etch patterns with smaller linewidths. After effective matching of the zirconia nanocluster film-forming resin with the photosensitizer, the sensitivity of the ultraviolet photoresist is significantly improved, the exposure dose is significantly reduced, and the photolithography efficiency is greatly enhanced. Furthermore, the presence of metal oxides gives the photoresist excellent mechanical properties and etching resistance, and the exposed pattern hardly undergoes deformation or peeling in the subsequent development process, resulting in high pattern fidelity.

[0039] In some implementations, R 1 Selected from any one of the following groups:

[0040]

[0041] In this context, * indicates a connection site.

[0042] In some implementations, R 2 and R 3 All are -Cl.

[0043] In some embodiments, the photosensitizer is one or more of 2-(1,3-benzodioxolane-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-[2-(furan-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine, and 2-[2-(5-methylfuran-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine.

[0044] In some embodiments, the organic ligands containing carboxyl groups include, but are not limited to, acrylic acid ligands, methacrylic acid ligands, 1-hydroxy-2-naphthoic acid ligands, salicylic acid ligands, etc.

[0045] In some embodiments, the mass percentage of zirconium oxide nanoclusters in the organic solvent can be 0.5% to 15%, and can also be 1%, 1.5%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 14.5%, etc.

[0046] In some embodiments, the photosensitizer in the organic solvent can be 0.001% to 1% by mass, or it can be 0.002%, 0.003%, 0.005%, 0.006%, 0.008%, 0.01%, 0.02%, 0.05%, 0.08%, 0.1%, 0.12%, 0.15%, 0.3%, 0.5%, 0.8%, etc.

[0047] In some embodiments, the organic solvent is selected from those with strong solubility for the photosensitizer and zirconia nanoclusters, so that the photosensitizer and zirconia nanoclusters can be well dissolved and uniformly dispersed in the organic solvent. After spin-coating the UV photoresist onto the substrate and drying it to form a UV photoresist film, it can be ensured that the photosensitizer and zirconia nanoclusters can be uniformly dispersed in the UV photoresist film. After photolithography exposure, the exposed areas of the UV photoresist are difficult to dissolve in the developer, while the non-exposed areas of the UV photoresist can dissolve accurately and quickly. Preferably, the organic solvent can be any one or more commonly used in the art, including but not limited to ethyl lactate, anisole, propylene glycol monomethyl ether acetate, methyl isobutyl ketone, and isopropanol.

[0048] In another aspect, the present invention also provides a method for ultraviolet photoresist patterning, comprising the following steps:

[0049] The ultraviolet photoresist described above is spin-coated onto the substrate and then dried to form an ultraviolet photoresist film;

[0050] The ultraviolet photoresist film is exposed to ultraviolet light under a photomask and then developed in a developer to form a photolithographic pattern.

[0051] In some embodiments, the developer includes, but is not limited to, at least one of toluene, xylene, 1,2-diacetoxypropane, propylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, isopropanol, isobutanol, isoamyl alcohol, 4-methyl-2-pentanol, isopropoxyethanol, 1-methoxy-2-propanol, 1-propoxy-2-propanol, 1-butoxy-2-propanol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, propylene glycol ethyl ether, 2-heptanone, and 2-butanone.

[0052] In some embodiments, the light source for ultraviolet lithography exposure is deep ultraviolet light with a wavelength of 254 nm or ultraviolet light with a wavelength of 365 nm. When the light source for ultraviolet lithography exposure is deep ultraviolet light with a wavelength of 254 nm, the exposure dose can be greater than or equal to 12 mJ / cm². -2 When the light source for ultraviolet lithography is 365nm wavelength ultraviolet light, the exposure dose can be greater than or equal to 200mJ / cm². -2 .

[0053] In some embodiments, the substrate can be any substrate material commonly used in the art, such as silicon wafers, quartz sheets, glass sheets, etc.

[0054] In some implementations, when forming a photolithography pattern, a mask needs to be applied to block the light in order to form an ultraviolet photolithography pattern with a preset shape.

[0055] The ultraviolet photoresist and the method for patterning ultraviolet photoresist of the present invention will be further described in detail below with reference to specific embodiments.

[0056] Example 1

[0057] Take 0.03 g of 2-(1,3-benzodioxolane-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine and 0.75 g of zirconium oxide nanoclusters (Zr6O4(OH)4(CH2=CCH3COO)). 12 The UV photoresist solution was dissolved in 14.25 g of propylene glycol monomethyl ether acetate solvent and stirred until completely dissolved. The solution was then filtered twice through a 0.22 μm pore size filter membrane. After filtration, the UV photoresist solution was placed in a brown glass bottle and stored at room temperature away from light.

[0058] Take an appropriate amount of the prepared UV photoresist solution and drop it onto the surface of a clean silicon wafer. Place the substrate material into the wafer at a rotation speed of 2000 rpm and an acceleration of 500 rpm. -1The substrate was then coated for 1 minute in a spin coater. Afterward, the substrate was removed and baked at 90°C for 1 minute. Subsequently, the substrate was placed in a UV contact lithography machine, and a mask was applied. Photolithography exposure was performed using UV light at wavelengths of 254 nm and 365 nm, respectively. The exposure doses for the 254 nm and 365 nm UV light exposures were 12 mJ / cm², respectively. -2 and 200mJ cm -2 The development time was 15 seconds for both. After UV exposure, the substrate material was removed and placed in 1,2-diacetoxypropane for development. After development, the residual developer on the surface of the substrate material was dried with a nitrogen gun. The patterns obtained by photolithography exposure at wavelengths of 254 nm and 365 nm were observed using a metallurgical microscope, as shown below. Figure 1A , Figure 1B and Figure 2A , Figure 2B As shown.

[0059] Example 2

[0060] Take 0.03 g of 2-[2-(furan-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine and 0.75 g of zirconium oxide nanoclusters (Zr6O4(OH)4(CH2=CCH3COO)). 12 The UV photoresist solution was dissolved in 14.25 g of propylene glycol monomethyl ether acetate solvent and stirred until completely dissolved. The solution was then filtered twice through a 0.22 μm pore size filter membrane. After filtration, the UV photoresist solution was placed in a brown glass bottle and stored at room temperature away from light.

[0061] Take an appropriate amount of the prepared UV photoresist solution and drop it onto the surface of a clean silicon wafer. Place the substrate material into the wafer at a rotation speed of 2000 rpm and an acceleration of 500 rpm. -1 The substrate was then coated for 1 minute in a spin coater. Afterward, the substrate was removed and baked at 90°C for 1 minute. Subsequently, the substrate was placed in a UV contact lithography machine, a mask was applied, and photolithography exposure was performed using UV light at wavelengths of 254 nm and 365 nm, respectively. The exposure doses for the 254 nm and 365 nm UV light exposures were 54 mJ / cm², respectively. -2 and 800mJ cm -2 The development time was 15 seconds for both. After UV exposure, the substrate material was removed and placed in 1,2-diacetoxypropane for development. After development, the residual developer on the surface of the substrate material was dried with a nitrogen gun. The patterns obtained by photolithography exposure at wavelengths of 254 nm and 365 nm were observed using a metallurgical microscope, as shown below. Figure 3A , Figure 3B and Figure 4A, Figure 4B As shown.

[0062] Example 3

[0063] Take 0.03 g of 2-[2-(5-methylfuran-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine and 0.75 g of zirconium oxide nanoclusters (Zr6O4(OH)4(CH2=CCH3COO)). 12 The UV photoresist solution was dissolved in 14.25 g of propylene glycol monomethyl ether acetate solvent and stirred until completely dissolved. The solution was then filtered twice through a 0.22 μm pore size filter membrane. After filtration, the UV photoresist solution was placed in a brown glass bottle and stored at room temperature away from light.

[0064] Take an appropriate amount of the prepared UV photoresist solution and drop it onto the surface of a clean silicon wafer. Place the substrate material into the wafer at a rotation speed of 2000 rpm and an acceleration of 500 rpm. -1 The substrate was then coated for 1 minute in a spin coater. Afterward, the substrate was removed and baked at 90°C for 1 minute. Subsequently, the substrate was placed in a UV contact lithography machine, a mask was applied, and photolithography exposure was performed using UV light at wavelengths of 254 nm and 365 nm, respectively. The exposure doses for the 254 nm and 365 nm UV light exposures were 72 mJ / cm², respectively. -2 and 3600mJ cm -2 The development time was 15 seconds for both. After UV exposure, the substrate material was removed and placed in 1,2-diacetoxypropane for development. After development, the residual developer on the surface of the substrate material was dried with a nitrogen gun. The patterns obtained by photolithography exposure at wavelengths of 254 nm and 365 nm were observed using a metallurgical microscope, as shown below. Figure 5A , Figure 5B and Figure 6A , Figure 6B As shown.

[0065] Comparative Example

[0066] Take 0.03 g of N-hydroxynaphthalimide trifluoromethanesulfonate and 0.75 g of zirconium oxide nanoclusters (Zr6O4(OH)4(CH2=CCH3COO)). 12 The UV photoresist solution was dissolved in 14.25 g of propylene glycol monomethyl ether acetate solvent and stirred until completely dissolved. The solution was then filtered twice through a 0.22 μm pore size filter membrane. After filtration, the UV photoresist solution was placed in a brown glass bottle and stored at room temperature away from light.

[0067] Take an appropriate amount of the prepared UV photoresist solution and drop it onto the surface of a clean silicon wafer. Place the substrate material into the wafer at a rotation speed of 2000 rpm and an acceleration of 500 rpm. -1 The substrate material was then homogenized in a spin coater for 1 minute. Afterward, the substrate material was removed and baked at 90°C for 1 minute. Subsequently, the substrate material was placed in a UV contact lithography machine, and a mask was applied. Photolithography exposure was performed using UV light at wavelengths of 254 nm and 365 nm, respectively. The exposure doses for the 254 nm and 365 nm UV light exposures were 144 mJ / cm², respectively. -2 and 6000mJ cm -2 The development time was 15 seconds for both. After UV exposure, the substrate material was removed and placed in 1,2-diacetoxypropane for development. After development, the residual developer on the surface of the substrate material was dried with a nitrogen gun. The patterns obtained by photolithography exposure at wavelengths of 254 nm and 365 nm were observed using a metallurgical microscope, as shown below. Figure 7A , Figure 7B and Figure 8A , Figure 8B As shown.

[0068] As can be seen from the above examples and comparative examples, under the condition that the exposure light source is ultraviolet light with wavelengths of 254 nm and 365 nm, when 2-(1,3-benzodioxolane-5-yl)-4,6-bis(trichloromethyl)-1,3,5-triazine, 2-[2-(furan-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine, and 2-[2-(5-methylfuran-2-yl)vinyl]-4,6-bis(trichloromethyl)-1,3,5-triazine are used as photosensitizers to react with zirconium oxide nanoclusters, the exposure doses are 12 mJ / cm², respectively. -2 and 200mJ cm -2 54mJ cm -2 and 800mJ cm -2 72mJ cm -2 and 3600mJ cm -2 In the comparative examples, when photosensitizers other than those specified in this invention were used to react with zirconium oxide nanoclusters, the exposure doses were 144 mJ / cm². -2 and 6000mJ cm -2 Therefore, the ultraviolet photoresist provided in this embodiment of the invention, during the exposure process, allows the zirconium oxide nanoclusters to interact with a defined photosensitizer, which can significantly reduce the ultraviolet exposure dose of the photoresist and increase the photolithography speed.

[0069] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0070] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A type of ultraviolet photoresist, characterized in that, It is composed of an organic solvent, a photosensitizer, and zirconium oxide nanoclusters, wherein the general chemical formula of the zirconium oxide nanoclusters is Zr. x O y (OH) z L m , where 2≤x≤20, 2≤y≤40, 0≤z≤40, 4≤m≤40, and L is an organic ligand containing a carboxyl group; The photosensitizer has the following structure: Among them, R 1 Selected from , , Any one of them, * indicates a connection site, R 2 and R 3 Each occurrence is independently selected from -F, -Cl, -Br, or -I.

2. The ultraviolet photoresist according to claim 1, characterized in that, The R 2 and R 3 All are -Cl.

3. The ultraviolet photoresist according to claim 1 or 2, characterized in that, The organic ligand containing a carboxyl group includes at least one of acrylic acid ligand, methacrylic acid ligand, 1-hydroxy-2-naphthoic acid ligand, and salicylic acid ligand.

4. The ultraviolet photoresist according to claim 1 or 2, characterized in that, In the organic solvent, the photosensitizer has a mass percentage content of 0.001% to 1%.

5. The ultraviolet photoresist according to claim 1 or 2, characterized in that, In the organic solvent, the zirconium oxide nanoclusters have a mass percentage content of 0.5% to 15%.

6. The ultraviolet photoresist according to claim 1 or 2, characterized in that, The organic solvent includes at least one of ethyl lactate, anisole, propylene glycol monomethyl ether acetate, methyl isobutyl ketone, and isopropanol.

7. A method for patterning ultraviolet photoresist, characterized in that, Includes the following steps: The ultraviolet photoresist according to any one of claims 1-6 is spin-coated onto a substrate and then dried to form an ultraviolet photoresist film; The ultraviolet photoresist film is exposed to ultraviolet light under a mask and then developed in a developer to form a photolithographic pattern.

8. The method according to claim 7, characterized in that, The developer comprises at least one of toluene, xylene, 1,2-diacetoxypropane, propylene glycol monomethyl ether acetate, ethylene glycol monobutyl ether acetate, isopropanol, isobutanol, isoamyl alcohol, 4-methyl-2-pentanol, isopropoxyethanol, 1-methoxy-2-propanol, 1-propoxy-2-propanol, 1-butoxy-2-propanol, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, propylene glycol ethyl ether, 2-heptanone, and 2-butanone.

9. The method for ultraviolet photoresist patterning according to claim 7, characterized in that, The light source for the ultraviolet lithography exposure is ultraviolet light with a wavelength of 365 nm, deep ultraviolet light with a wavelength of 254 nm, or extreme ultraviolet light with a wavelength of 13.5 nm.

10. The method for ultraviolet photoresist patterning according to claim 7, characterized in that, When the light source for ultraviolet lithography is deep ultraviolet light with a wavelength of 254 nm, the exposure dose is greater than or equal to 12 mJ / cm². -2 When the light source for ultraviolet lithography is 365nm wavelength ultraviolet light, the exposure dose is greater than or equal to 200 mJ / cm². -2 .

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