Method for testing trap evolution of gallium oxide schottky barrier diode after electrical stress

Abstract

This invention discloses a method for testing the evolution of traps in gallium oxide Schottky barrier diodes after electrical stress, comprising: performing deep-level transient spectrum testing on the current gallium oxide Schottky barrier diode sample to obtain deep-level transient spectrum test results; performing variable-temperature low-frequency noise testing on the current sample to obtain variable-temperature low-frequency noise test results; comparing the two test results to determine the majority and minority carrier traps in the sample to obtain trap information; determining whether the current device has failed, and if not, applying electrical stress to the current sample for a certain period of time and performing the two tests and comparisons again, with the applied electrical stress time increasing progressively; if yes, obtaining the evolution process of traps after applying electrical stress based on all trap information. This invention can simultaneously characterize and distinguish the majority and minority carrier traps in gallium oxide Schottky diodes, and can quantitatively give the concentration and energy level corresponding to each trap, enabling a more comprehensive analysis of traps in gallium oxide Schottky barrier diode devices.

Description

Technical Field

[0001] This invention belongs to the field of microelectronics, specifically relating to a test method for the evolution of traps after electrical stress in gallium oxide Schottky barrier diodes. Background Technology

[0002] As an emerging ultrawide bandgap conductor, gallium oxide (Ga2O3) boasts an ultrawide bandgap of 4.9–5.3 eV. In comparison, SiC and GaN have a bandgap of 3.3 eV, while silicon has only 1.1 eV. Therefore, Ga2O3, as a new material, possesses higher power characteristics and deep-ultraviolet photoelectric properties. Furthermore, its low-cost synthesis on artificial crystal substrates allows developers to potentially develop miniaturized, efficient, and cost-effective ultra-high-power transistors. This may explain why Ga2O3 continues to attract widespread interest from developers, even after significant progress has been made in wide-bandgap (WBG) semiconductor devices represented by SiC and GaN. Therefore, gallium oxide materials hold promise for applications in high-voltage, high-power, and low-loss power devices. Currently, the microelectronics field frequently encounters bottlenecks, and research and development of gallium oxide power devices could be a crucial opportunity for my country to reach the forefront of the world or achieve a leapfrog development in the semiconductor industry.

[0003] Due to its low fabrication difficulty, short fabrication time, low switching losses, and increasingly good rectification characteristics, gallium oxide Schottky barrier diodes (GaOS diodes) are widely used in power electronics, new energy, and rail transportation, and their research interest is growing. Although GaOS diodes do not exhibit minority carrier storage effects compared to traditional pn junction diodes and have advantages in withstanding high voltage and current, researchers often add various termination structures to fully utilize the high breakdown voltage of GaOS. This affects their reliability. Furthermore, the environments in which GaOS Schottky barrier diodes are used in practical applications are quite complex. Therefore, addressing their reliability is crucial in their current development.

[0004] Gallium oxide Schottky barrier diodes (GaOSS diodes) suffer severe performance degradation after electrical stress, primarily due to defects. However, there is currently no research scheme specifically addressing the defect evolution of GaOSS diodes after electrical stress, making it impossible to comprehensively analyze the defect behavior in GaOSS diodes. This hinders reliability research on GaOSS diodes and impedes their further development. Summary of the Invention

[0005] To address the aforementioned problems in the prior art, this invention provides a method, apparatus, electronic device, and storage medium for testing the post-stress trap evolution of gallium oxide Schottky barrier diodes. The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] In a first aspect, embodiments of the present invention provide a method for testing the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode, the method comprising:

[0007] Step 1: Perform deep-level transient spectroscopy on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectroscopy test results; wherein, when Step 1 is performed for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample; the deep-level transient spectroscopy test results include the concentration, energy level and trapping cross section corresponding to different majority carrier traps in the device corresponding to the current gallium oxide Schottky barrier diode sample;

[0008] Step 2: Perform a variable-temperature low-frequency noise test on the current gallium oxide Schottky barrier diode sample to obtain the variable-temperature low-frequency noise test results; wherein, the variable-temperature low-frequency noise test results include the concentration and energy level of traps in the device;

[0009] Step 3: Compare the current deep-level transient spectrum test results and the variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample; use the deep-level transient spectrum test results and variable-temperature low-frequency noise test results after trap type determination as trap information;

[0010] Step 4: Determine if the current device is faulty. If not, proceed to step 5; if yes, proceed to step 6.

[0011] Step 5: Apply electrical stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and repeat step 1; wherein the applied electrical stress time is increased successively.

[0012] Step 6: Based on all the trap information obtained from the gallium oxide Schottky barrier diode sample before and after applying electrical stress, the evolution process of the traps in the gallium oxide Schottky barrier diode sample after applying electrical stress is obtained.

[0013] In one embodiment of the present invention, the step of performing deep-level transient spectroscopy on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectroscopy test results includes:

[0014] The current gallium oxide Schottky barrier diode sample is mounted on a variable temperature sample stage, ensuring that the device is tightly connected to the variable temperature sample stage, and the anode and cathode of the diode in the sample are connected to the positive and negative test terminals of the deep energy transient spectrometer, respectively.

[0015] Test parameters were set, and the sample was tested to obtain the peaks of the deep-level transient spectrum (DLTS). Based on the DLTS peaks, the concentrations of different majority carrier traps in the device were calculated. The test parameters included: bias voltage V. measure Fill voltage V fill Fill pulse width t p and a first temperature range; the first temperature range contains multiple temperature values;

[0016] By analyzing the DLTS spectral lines under different rate windows, the Allen-Nius curves are obtained. Based on the slope and intercept of the Allen-Nius curves, the energy levels and trapping cross sections corresponding to different majority carrier traps in the device are obtained respectively.

[0017] In one embodiment of the present invention, the step of performing a variable-temperature low-frequency noise test on the current gallium oxide Schottky barrier diode sample to obtain the variable-temperature low-frequency noise test results includes:

[0018] The current gallium oxide Schottky barrier diode sample is mounted on the variable temperature sample stage using the same mounting method as during DLTS testing.

[0019] Connect the sample to the 1 / f noise testing system and turn on the 1 / f noise testing system;

[0020] For each temperature within the second temperature range, the temperature of the variable-temperature sample stage is set accordingly.

[0021] A 1 / f noise test was performed on the current gallium oxide Schottky barrier diode sample at this temperature to obtain the noise power spectral density of the sample at this temperature.

[0022] Using the noise power spectral density obtained from all temperatures within the second temperature range, the trap concentration and energy level in the device are characterized by a model.

[0023] In one embodiment of the present invention, the step of comparing the currently obtained deep-level transient spectrum test results and the temperature-varying low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample includes:

[0024] By comparing the current deep-level transient spectrum test results with the variable-temperature low-frequency noise test results, traps that are detected by both deep-level transient spectrum test and variable-temperature low-frequency noise test and have the same energy level are identified as majority carrier traps, while traps that are detected only by variable-temperature low-frequency noise test but not by deep-level transient spectrum test are identified as minority carrier traps.

[0025] In one embodiment of the present invention, the gallium oxide Schottky barrier diode is a gallium oxide Schottky barrier diode with a conventional structure.

[0026] Secondly, embodiments of the present invention provide a testing apparatus for the post-stress trap evolution of gallium oxide Schottky barrier diodes, the apparatus comprising:

[0027] The deep-level transient spectrum testing module is used to perform deep-level transient spectrum testing on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectrum test results. Specifically, when performing the deep-level transient spectrum test for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample. The deep-level transient spectrum test results include the concentration, energy level, and trapping cross-section corresponding to different majority carrier traps in the device of the current gallium oxide Schottky barrier diode sample.

[0028] Variable-temperature low-frequency noise testing is used to perform variable-temperature low-frequency noise testing on current gallium oxide Schottky barrier diode samples to obtain variable-temperature low-frequency noise test results; wherein, the variable-temperature low-frequency noise test results include the concentration and energy level of traps in the device;

[0029] The trap type determination module is used to compare the currently obtained deep-level transient spectrum test results and variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample; the deep-level transient spectrum test results and variable-temperature low-frequency noise test results after trap type determination are used as trap information;

[0030] The failure determination module is used to determine whether the current device has failed. If not, the processing of the applied electrical stress module is executed; if so, the processing of the trap evolution process analysis module is executed.

[0031] An electric stress application module is used to apply electric stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and then execute the processing of the deep energy level transient spectrum test module again; wherein, the time of the electric stress applied by the electric stress application module is increased successively;

[0032] The trap evolution process analysis module is used to obtain the evolution process of traps in the gallium oxide Schottky barrier diode sample after applying electrical stress, based on all trap information obtained before and after applying electrical stress.

[0033] Thirdly, embodiments of the present invention provide an electronic device, including a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus;

[0034] The memory is used to store computer programs;

[0035] When the processor executes the program stored in the memory, it implements the steps of the test method for the post-stress trap evolution of gallium oxide Schottky barrier diodes provided in the embodiments of the present invention.

[0036] Fourthly, embodiments of the present invention provide a computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the steps of the test method for the post-stress trap evolution of gallium oxide Schottky barrier diodes provided in embodiments of the present invention.

[0037] The beneficial effects of this invention are:

[0038] This invention proposes a research scheme combining deep-level transient spectroscopy and variable-temperature low-frequency noise testing, filling a gap in the study of defect evolution in gallium oxide Schottky barrier diodes (GaOSDBs) after electrical stress. This scheme can simultaneously characterize and distinguish between majority carrier traps and minority carrier traps in GaOSDBs, and can quantitatively provide the concentration and energy level of each trap. It can comprehensively and quantitatively characterize the trap evolution of GaOSDBs before and after applying electrical stress. Compared with using a single testing method, this invention can provide a more comprehensive analysis of traps in GaOSDB devices, solving the research challenge of defect evolution after electrical stress in GaOSDBs, and thus providing an effective and feasible research scheme for the reliability study of GaOSDBs. Attached Figure Description

[0039] Figure 1 A schematic flowchart illustrating a method for testing the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode, provided in an embodiment of the present invention.

[0040] Figure 2 This is a schematic diagram of the device structure of the gallium oxide Schottky barrier diode used in an embodiment of the present invention;

[0041] Figure 3 This is another flowchart illustrating the testing method for the post-stress trap evolution of a gallium oxide Schottky barrier diode provided in an embodiment of the present invention.

[0042] Figure 4 This is a graph showing the deep-level transient spectrum of a gallium oxide Schottky barrier diode before and after electrical stress in an experiment according to an embodiment of the present invention.

[0043] Figure 5 The Arrhenius curve of the gallium oxide Schottky barrier diode after electrical stress in the experiment of the embodiment of the present invention;

[0044] Figure 6This is a temperature dependence diagram of the voltage-noise-power-density spectrum of a gallium oxide Schottky barrier diode before and after electrical stress in an experiment according to an embodiment of the present invention.

[0045] Figure 7 This is a schematic diagram of a test device for the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode, provided in an embodiment of the present invention.

[0046] Figure 8 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0047] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0048] To fill the gap in the industry regarding research schemes on defect evolution of gallium oxide Schottky barrier diodes after electrical stress, and to comprehensively analyze the defect behavior in gallium oxide Schottky barrier diodes, embodiments of the present invention provide a test method, apparatus, electronic device, and storage medium for the trap evolution of gallium oxide Schottky barrier diodes after electrical stress.

[0049] It should be noted that the execution subject of the test method for the post-stress trap evolution of a gallium oxide Schottky barrier diode provided in this embodiment of the invention can be a device, which can operate in an electronic device. This electronic device can be a server or a terminal device, but is not limited to these.

[0050] In a first aspect, embodiments of the present invention provide a method for testing the evolution of traps after electrical stress in gallium oxide Schottky barrier diodes, such as... Figure 1 As shown, the method may include the following steps:

[0051] Step 1: Perform deep-level transient spectrum testing on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectrum test results;

[0052] In one optional embodiment, the gallium oxide Schottky barrier diode is a gallium oxide Schottky barrier diode of conventional structure. Please refer to [link to relevant documentation]. Figure 2 As shown, the device structure of this gallium oxide Schottky barrier diode, from bottom to top, includes:

[0053] Cathode 1, β-Ga2O3 substrate 2, β-Ga2O3 epitaxial layer 3, and anode 4.

[0054] It is understood that the gallium oxide Schottky barrier diode of this traditional structure is a vertical structure; the β-Ga2O3 substrate 2 uses heavily doped gallium oxide, typically with a doping concentration of 10. 18 cm -3 The order of magnitude; the β-Ga2O3 epitaxial layer 3 uses lightly doped gallium oxide, typically with a doping concentration of 10. 16 cm -3 The magnitude is not limited to the conventional structure. Of course, the gallium oxide Schottky barrier diode in this embodiment of the invention is not limited to a traditional structure.

[0055] In this embodiment of the invention, when step 1 is executed for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample, that is, the gallium oxide Schottky barrier diode sample without applied electrical stress. This initial gallium oxide Schottky barrier diode sample will sequentially undergo the tests in steps 1 and 2, and complete the comparison in step 3 to obtain the corresponding trap information.

[0056] In one optional implementation, step 1 may include the following steps:

[0057] Step 11: Install the current gallium oxide Schottky barrier diode sample onto the variable temperature sample stage, ensuring that the device is tightly connected to the variable temperature sample stage, and connect the anode and cathode of the diode in the sample to the positive and negative test terminals of the deep energy transient spectrometer, respectively.

[0058] Deep Level Transient Spectroscopy (DLTS) is an important method in the semiconductor field for studying and detecting deep energy levels of semiconductor impurities and defects, as well as interface states. Currently, deep level transient spectrometers are available as mature equipment.

[0059] Step 12: Set the test parameters, test the sample to obtain the peak of the deep level transient spectrum (DLTS), and calculate the concentration of different majority carrier traps in the device based on the peak of the deep level transient spectrum (DLTS).

[0060] The test parameters include: bias voltage V measure Fill voltage V fill Fill pulse width t p And a first temperature range; the first temperature range contains multiple temperature values. For the specific meaning of the test parameters, please refer to the relevant DLTS documentation, which will not be detailed here.

[0061] Step 13: By analyzing the DLTS spectral lines under different rate windows, the Allen-Nius curves are obtained. Based on the slope and intercept of the Allen-Nius curves, the energy levels and trapping cross sections corresponding to different majority carrier traps in the device are obtained respectively.

[0062] The deep-level transient spectroscopy test results include the concentration, energy level, and trapping cross section corresponding to different majority carrier traps in the current gallium oxide Schottky barrier diode sample. For the specific process of the deep-level transient spectroscopy test, please refer to the relevant technical understanding, which will not be explained in more detail here. Although the deep-level transient spectroscopy method can quantitatively characterize device defects, for gallium oxide Schottky barrier diode samples, the deep-level transient spectroscopy test alone can only characterize the majority carrier traps in the device, and cannot characterize the minority carrier traps. Therefore, using this method alone to test gallium oxide Schottky barrier diodes cannot completely characterize the defects in the device.

[0063] Step 2: Perform variable-temperature low-frequency noise test on the current gallium oxide Schottky barrier diode sample to obtain the variable-temperature low-frequency noise test results;

[0064] In one optional implementation, step 2 may include the following steps:

[0065] Step 21: Mount the current gallium oxide Schottky barrier diode sample onto the variable temperature sample stage using the same mounting method as during DLTS testing.

[0066] The variable temperature sample stage used in step 21 is the same as the variable temperature sample stage used in step 11.

[0067] Step 22: Connect the sample to the 1 / f noise testing system and turn on the 1 / f noise testing system;

[0068] Step 23: For each temperature within the second temperature range, set the temperature of the variable temperature sample stage accordingly;

[0069] The first and second temperature ranges can be set according to the actual situation. In some cases, these two temperature ranges may be the same; in other cases, they may be different because the principles of the two methods are different. The spectral peak corresponding to the same defect may appear at different temperatures. No specific restrictions are imposed here.

[0070] Step 24: Perform a 1 / f noise test on the current gallium oxide Schottky barrier diode sample at this temperature to obtain the noise power spectral density of the sample at this temperature;

[0071] Step 25: Using the noise power spectral density obtained from all temperatures within the second temperature range, the trap concentration and energy level in the device are characterized by a model.

[0072] Temperature-dependent low-frequency noise (TLD) is a term used to describe the testing process. For detailed explanations of the relevant technical documentation, please refer to the relevant technical documentation; further details will not be provided here. The TLD test results include the concentration and energy levels of traps within the device. TLD testing can determine the concentration and energy levels of all traps within the device, including both majority carrier and minority carrier traps.

[0073] Although the variable-temperature low-frequency noise method can quantitatively characterize device defects, it cannot distinguish between majority carrier traps and minority carrier traps when used alone. Therefore, using this method alone to test gallium oxide Schottky barrier diodes cannot fully characterize the defects in the device.

[0074] Step 3: Compare the current deep-level transient spectrum test results and the variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample; use the deep-level transient spectrum test results and variable-temperature low-frequency noise test results after trap type determination as trap information;

[0075] Since there is no existing technology to study the defect evolution process of gallium oxide Schottky barrier diode devices after electrical stress, this invention considers using current methods for quantitatively characterizing semiconductor device defects for testing and implementation.

[0076] Among existing methods, Optical Deep Level Transient Spectroscopy (ODLTS) can theoretically characterize defects in semiconductor devices and simultaneously test and distinguish between majority carrier traps and minority carrier traps. However, for ultra-wide bandgap semiconductors like gallium oxide, shorter wavelength excitation sources (typically ultraviolet light sources less than 254 nm) are required for testing. Furthermore, for conventional vertical-structure gallium oxide Schottky barrier diodes, the ultraviolet light source cannot penetrate the metal electrode to reach the gallium oxide epitaxial layer. Therefore, this method cannot characterize traps in the epitaxial layer of these gallium oxide Schottky barrier diode devices and thus cannot be applied to defect characterization of gallium oxide Schottky barrier diode devices before and after electrical stress.

[0077] Furthermore, both deep-level transient spectroscopy and variable-temperature low-frequency noise (VFD) methods can be used to quantitatively characterize defect concentration and energy levels in semiconductor devices. When applied to the defect characterization of gallium oxide Schottky barrier diodes before and after electrical stress, either method alone can characterize the change in trap concentration or the energy level of newly generated traps. However, the root causes of new trap formation and the underlying reasons for some trap concentration changes remain unresolved. This is because deep-level transient spectroscopy alone cannot detect minority carrier traps in gallium oxide Schottky barrier diodes, resulting in the loss of half of the trap type information, which may lead to a failure to determine the root cause of trap evolution. While VFD alone can fully obtain information on majority and minority carrier traps, it cannot distinguish between trap types, potentially leading to incorrect analysis of the trap evolution root cause.

[0078] Therefore, after in-depth analysis, this invention embodiment determines that two characterization methods, deep-level transient spectroscopy and variable-temperature low-frequency noise method, are used simultaneously. The same variable-temperature sample stage is connected to the deep-level transient spectroscopy and low-frequency noise test modules. The variable-temperature low-frequency noise method is used to compensate for the problem that the deep-level transient spectroscopy method cannot characterize minority carrier traps, and the deep-level transient spectroscopy method is used to compensate for the problem that the variable-temperature low-frequency noise method cannot distinguish between majority and minority carrier traps. This allows for the detection of minority carrier traps in gallium oxide Schottky barrier diodes while simultaneously identifying majority and minority carrier traps, thereby filling the research gap in the industry regarding the defect evolution process of gallium oxide Schottky barrier diode devices after electrical stress.

[0079] Specifically, in step 3, the current deep-level transient spectrum test results and the temperature-varying low-frequency noise test results are compared to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample, including:

[0080] By comparing the current deep-level transient spectrum test results with the variable-temperature low-frequency noise test results, traps that are detected by both deep-level transient spectrum test and variable-temperature low-frequency noise test and have the same energy level are identified as majority carrier traps, while traps that are detected only by variable-temperature low-frequency noise test but not by deep-level transient spectrum test are identified as minority carrier traps.

[0081] Through the above comparison and judgment process, it is possible to distinguish between majority carrier traps and minority carrier traps in the deep-level transient spectrum test results and the variable-temperature low-frequency noise test results, and to quantitatively characterize them respectively, thereby obtaining the trap information of the current gallium oxide Schottky barrier diode sample for this test.

[0082] Step 4: Determine if the current device is faulty. If not, proceed to step 5; if yes, proceed to step 6.

[0083] For the initial gallium oxide Schottky barrier diode sample, it generally will not fail after completing steps 1 to 3. Step 4, which determines whether the device has failed, is mainly for the gallium oxide Schottky barrier diode sample that has undergone the process of applying electrical stress and completing steps 1 to 3.

[0084] Step 5: Apply electrical stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and then repeat step 1.

[0085] Specifically, if it is determined that the current device has not failed, an electrical stress is applied to the current gallium oxide Schottky barrier diode sample for a certain period of time, and then steps 1 to 3 are executed.

[0086] The applied electrical stress time is increased successively; that is, applying electrical stress to the gallium oxide Schottky barrier diode sample to complete steps 1 to 3 is counted as one test under electrical stress, and each test under electrical stress is completed after increasing the electrical stress time compared to the previous one.

[0087] Step 6: Based on all the trap information obtained from the gallium oxide Schottky barrier diode sample before and after applying electrical stress, the evolution process of the traps in the gallium oxide Schottky barrier diode sample after applying electrical stress is obtained.

[0088] The embodiments of the present invention can compare all the trap information obtained by gallium oxide Schottky barrier diode samples before and after applying electrical stress, and use data processing methods to obtain the evolution process of traps in gallium oxide Schottky barrier diode samples after applying electrical stress.

[0089] The processing steps described above in this embodiment of the invention can also be referred to Figure 3 understand, Figure 3 The steps described in the text provide a brief overview of the relevant processing procedures. For details, please refer to the previous explanation; they will not be repeated here.

[0090] To facilitate understanding of the relevant processing steps in step 6 and to facilitate understanding of the solution of this embodiment of the invention, experimental data are provided below for illustration.

[0091] Deep-level transient capacitance spectroscopy was performed on a gallium oxide Schottky barrier diode in its initial state, i.e., without applied electrical stress. The results are as follows: Figure 4 The black curve in the middle represents the initial sample, and this test result indicates that no majority carrier trap signal peak was detected. The gallium oxide Schottky barrier diode after applying electrical stress for a certain period of time was tested using deep-level transient spectroscopy, and the results are as follows. Figure 4The red curve in the image represents the sample after electrical stress. This test result detected a signal peak of a majority carrier trap, designated E1. This indicates that the gallium oxide Schottky barrier diode generated new majority carrier traps with a concentration of 7 × 10⁻⁶ after applying electrical stress. 15 cm -3 . Figure 4 In the diagram, the horizontal axis represents temperature, and the vertical axis represents the intensity of the deep-level transient spectrum signal.

[0092] By setting different rate windows, multiple sets of relationships between emissivity and peak temperature were obtained, and Arrhenius curves of gallium oxide Schottky barrier diodes under electrical stress were plotted. Based on... Figure 5 The energy level of this majority carrier trap is fitted to be E. C -0.46 eV, with a capture cross-section of 5.65 × 10⁻⁶. -17 cm 2 .in, Figure 5 The horizontal axis represents q / kT, where q represents the electron charge, k represents the Boltzmann constant, and T represents the thermodynamic temperature. The vertical axis represents ln(T). 2 / e), where e is the thermal emissivity of the charge carriers.

[0093] The results of the variable-temperature low-frequency noise test of gallium oxide Schottky barrier diodes are as follows: Figure 6 As shown. The gallium oxide Schottky barrier diode in its initial state exhibits a trap signal peak ① (as shown). Figure 6 (As shown by the black curve in the middle), the trap energy level corresponding to this peak is approximately 0.3 eV. After electrical stress, peak ① disappears, and the device detects trap signal peak ② (as shown by the black curve in the middle). Figure 6 (As shown by the red curve in the middle), the energy level corresponding to this peak is approximately 0.46 eV. Among them, Figure 6 The bottom horizontal axis represents the thermodynamic temperature, the top horizontal axis represents the trap energy level, and the vertical axis represents the S... V ×f / T, where S V denoted by voltage noise power spectral density, f represents frequency, and T represents thermodynamic temperature.

[0094] Since the DLTS characterization method can only detect majority carrier traps in Schottky diodes, the DLTS test of the initial state gallium oxide Schottky barrier diode did not detect the trap signal peak. (Comparison is needed.) Figure 6 The detected trap signal peak ① is a minority carrier trap with an energy level of E. V +0.3eV.

[0095] Figure 6 The energy level corresponding to the trap signal peak ② is 0.46 eV, which matches the energy level of the E1 trap detected by the DLTS test of the electrically stressed gallium oxide Schottky barrier diode. Therefore, Figure 6Trap ② in the text is the E1 trap, and it is a majority carrier trap.

[0096] By comparing the data before and after electrical stress, the newly generated E after electrical stress in the gallium oxide Schottky barrier diode tested in this study can be obtained. C The majority carrier trap at -0.46 eV is due to the intrinsic minority carrier trap E V This is due to a reduction of +0.3 eV, meaning the energy level after electrical stress is E. V The minority carrier trap at +0.3 eV evolves into an energy level of E. C Majority carrier trap of -0.46 eV.

[0097] As can be seen, this invention proposes a scheme combining deep-level transient spectroscopy and variable-temperature low-frequency noise method to study the evolution of trap behavior in gallium oxide Schottky barrier diodes before and after electrical stress. This testing scheme can simultaneously and quantitatively characterize and distinguish between majority carrier and minority carrier traps in gallium oxide Schottky barrier diodes, enabling a comprehensive analysis of defect behavior in gallium oxide Schottky barrier diodes.

[0098] This invention proposes a research scheme combining deep-level transient spectroscopy and variable-temperature low-frequency noise testing, filling a gap in the study of defect evolution in gallium oxide Schottky barrier diodes (GaOSDBs) after electrical stress. This scheme can simultaneously characterize and distinguish between majority carrier traps and minority carrier traps in GaOSDBs, and can quantitatively provide the concentration and energy level of each trap. It can comprehensively and quantitatively characterize the trap evolution of GaOSDBs before and after applying electrical stress. Compared with using a single testing method, this invention can provide a more comprehensive analysis of traps in GaOSDB devices, solving the research challenge of defect evolution after electrical stress in GaOSDBs, and thus providing an effective and feasible research scheme for the reliability study of GaOSDBs. For power devices, high reliability means that the device can operate in harsher environments without easily experiencing significant degradation that could lead to failure. Therefore, the test scheme proposed in this invention can accurately quantify and characterize the trapping behavior of gallium oxide Schottky barrier diodes, thereby analyzing their degradation mechanism after electrical stress. This not only provides a reference for device reliability but also helps in predicting the lifetime of gallium oxide Schottky barrier diodes in the future, enabling gallium oxide Schottky barrier diodes to operate more stably in fields with more stringent performance requirements, such as communications and signal processing.

[0099] Secondly, corresponding to the above method embodiments, this invention also provides a testing device for the evolution of traps after electrical stress in gallium oxide Schottky barrier diodes, such as... Figure 7 As shown, the device includes:

[0100] The deep-level transient spectrum testing module 701 is used to perform deep-level transient spectrum testing on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectrum test results. Specifically, when performing the deep-level transient spectrum test for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample. The deep-level transient spectrum test results include the concentration, energy level, and trapping cross-section corresponding to different majority carrier traps in the device of the current gallium oxide Schottky barrier diode sample.

[0101] The variable-temperature low-frequency noise test module 702 is used to perform variable-temperature low-frequency noise testing on the current gallium oxide Schottky barrier diode sample to obtain variable-temperature low-frequency noise test results; wherein, the variable-temperature low-frequency noise test results include the concentration and energy level of traps in the device;

[0102] The trap type determination module 703 is used to compare the currently obtained deep-level transient spectrum test results and the variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample; and to use the deep-level transient spectrum test results and the variable-temperature low-frequency noise test results after trap type determination as trap information.

[0103] The failure judgment module 704 is used to determine whether the current device has failed. If not, the processing of the applied electrical stress module is executed; if so, the processing of the trap evolution process analysis module is executed.

[0104] An electric stress application module 705 is used to apply electric stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and then execute the processing of the deep-level transient spectrum test module again; wherein, the time of the electric stress applied by the electric stress application module is increased successively.

[0105] The trap evolution process analysis module 706 is used to obtain the evolution process of traps in the gallium oxide Schottky barrier diode sample after applying electrical stress, based on all the trap information obtained before and after applying electrical stress.

[0106] Optional, the deep-level transient spectrum testing module 701 is specifically used for:

[0107] The current gallium oxide Schottky barrier diode sample is mounted on a variable temperature sample stage, ensuring that the device is tightly connected to the variable temperature sample stage, and the anode and cathode of the diode in the sample are connected to the positive and negative test terminals of the deep energy transient spectrometer, respectively.

[0108] Test parameters were set, and the sample was tested to obtain the peaks of the deep-level transient spectrum (DLTS). Based on the DLTS peaks, the concentrations of different majority carrier traps in the device were calculated. The test parameters included: bias voltage V. measure Fill voltage V fill Fill pulse width t p and a first temperature range; the first temperature range contains multiple temperature values;

[0109] By analyzing the DLTS spectral lines under different rate windows, the Allen-Nius curves are obtained. Based on the slope and intercept of the Allen-Nius curves, the energy levels and trapping cross sections corresponding to different majority carrier traps in the device are obtained respectively.

[0110] Optional, the variable temperature low-frequency noise test module 702 is specifically used for:

[0111] The current gallium oxide Schottky barrier diode sample is mounted on the variable temperature sample stage using the same mounting method as during DLTS testing.

[0112] Connect the sample to the 1 / f noise testing system and turn on the 1 / f noise testing system;

[0113] For each temperature within the second temperature range, the temperature of the variable-temperature sample stage is set accordingly.

[0114] A 1 / f noise test was performed on the current gallium oxide Schottky barrier diode sample at this temperature to obtain the noise power spectral density of the sample at this temperature.

[0115] Using the noise power spectral density obtained from all temperatures within the second temperature range, the trap concentration and energy level in the device are characterized by a model.

[0116] Optional, the trap type determination module 703 is specifically used for:

[0117] By comparing the current deep-level transient spectrum test results with the variable-temperature low-frequency noise test results, traps that are detected by both deep-level transient spectrum test and variable-temperature low-frequency noise test and have the same energy level are identified as majority carrier traps, while traps that are detected only by variable-temperature low-frequency noise test but not by deep-level transient spectrum test are identified as minority carrier traps.

[0118] Optionally, the gallium oxide Schottky barrier diode is a gallium oxide Schottky barrier diode with a conventional structure.

[0119] For details on the specific processing procedures of each module of the device, please refer to the relevant content in the first section, which will not be repeated here.

[0120] This invention proposes a research scheme combining deep-level transient spectroscopy and variable-temperature low-frequency noise testing, filling a gap in the study of defect evolution in gallium oxide Schottky barrier diodes (GaOSDBs) after electrical stress. This scheme can simultaneously characterize and distinguish between majority carrier traps and minority carrier traps in GaOSDBs, and can quantitatively provide the concentration and energy level of each trap. It can comprehensively and quantitatively characterize the trap evolution of GaOSDBs before and after applying electrical stress. Compared with using a single testing method, this invention can provide a more comprehensive analysis of traps in GaOSDB devices, solving the research challenge of defect evolution after electrical stress in GaOSDBs, and thus providing an effective and feasible research scheme for the reliability study of GaOSDBs.

[0121] Thirdly, embodiments of the present invention also provide an electronic device, such as... Figure 8 As shown, it includes a processor 801, a communication interface 802, a memory 803, and a communication bus 804, wherein the processor 801, the communication interface 802, and the memory 803 communicate with each other through the communication bus 804.

[0122] The memory is used to store computer programs;

[0123] When the processor executes the program stored in the memory, it implements the steps of the test method for the post-stress trap evolution of any gallium oxide Schottky barrier diode provided in the first aspect of the present invention.

[0124] The communication bus mentioned in the above electronic devices can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, only one thick line is used to represent it in the diagram, but this does not mean that there is only one bus or one type of bus.

[0125] The communication interface is used for communication between the aforementioned electronic devices and other devices.

[0126] The memory may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage device. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor.

[0127] The processors mentioned above can be general-purpose processors, including central processing units (CPUs), network processors (NPs), etc.; they can also be digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0128] The method provided in this invention can be applied to electronic devices. Specifically, the electronic device can be a desktop computer, a portable computer, a smart mobile terminal, a server, etc. No limitation is made herein; any electronic device that can implement this invention falls within the protection scope of this invention.

[0129] Fourthly, corresponding to the test method for the post-stress trap evolution of a gallium oxide Schottky barrier diode provided in the first aspect, this embodiment of the invention also provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it implements the steps of the test method for the post-stress trap evolution of any gallium oxide Schottky barrier diode provided in the first aspect of this invention.

[0130] For the embodiments of the device / electronic device / storage medium, since they are basically similar to the method embodiments, the description is relatively simple, and relevant parts can be referred to in the description of the method embodiments.

[0131] It should be noted that the device, electronic device, and storage medium in the embodiments of the present invention are respectively the device, electronic device, and storage medium for testing the trap evolution after electrical stress of the gallium oxide Schottky barrier diode. Therefore, all embodiments of the above-mentioned test method for testing the trap evolution after electrical stress of the gallium oxide Schottky barrier diode are applicable to the device, electronic device, and storage medium, and can achieve the same or similar beneficial effects.

[0132] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0133] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A method for testing the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode, characterized in that, include: Step 1 involves performing deep-level transient spectroscopy (DLTS) on the current gallium oxide Schottky barrier diode sample to obtain the DLTS test results. Step 1 includes: mounting the current gallium oxide Schottky barrier diode sample onto a variable-temperature sample stage, ensuring a tight connection between the device and the stage; connecting the anode and cathode of the diode in the sample to the positive and negative test terminals of the deep-level transient spectrometer, respectively; setting the test parameters; and performing the test on the sample to obtain the DLTS peaks. The concentrations of different majority carrier traps in the device are calculated based on the DLTS peaks. The test parameters include: bias voltage V... measure Fill voltage V fill Fill pulse width t p The first temperature range contains multiple temperature values. By analyzing DLTS spectra under different rate windows, Allen-Nius curves are obtained. Based on the slope and intercept of the Allen-Nius curves, the energy levels and trapping cross-sections corresponding to different majority carrier traps in the device are obtained. When step 1 is executed for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample. The deep-level transient spectrum test results include the concentration, energy level, and trapping cross-section corresponding to different majority carrier traps in the device corresponding to the current gallium oxide Schottky barrier diode sample. Step 2 involves performing a variable-temperature low-frequency noise test on the current gallium oxide Schottky barrier diode sample to obtain the test results. These results include the concentration and energy levels of traps within the device. Step 2 includes: mounting the current gallium oxide Schottky barrier diode sample onto the variable-temperature sample stage using the same mounting method as during DLTS testing; connecting the sample to the 1 / f noise testing system and activating the 1 / f noise testing system; setting the temperature of the variable-temperature sample stage for each temperature within the second temperature range; performing a 1 / f noise test on the current gallium oxide Schottky barrier diode sample at that temperature to obtain the corresponding noise power spectral density; and using the noise power spectral densities obtained from all temperatures within the second temperature range, characterizing the trap concentration and energy levels within the device through a model. Step 3: Compare the currently obtained deep-level transient spectrum test results and variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample. This includes comparing the currently obtained deep-level transient spectrum test results and variable-temperature low-frequency noise test results; identifying traps detected by both deep-level transient spectrum test and variable-temperature low-frequency noise test and with the same energy level as majority carrier traps; and identifying traps detected only by variable-temperature low-frequency noise test but not by deep-level transient spectrum test as minority carrier traps. The deep-level transient spectrum test results and variable-temperature low-frequency noise test results after trap type determination are used as trap information. Step 4: Determine if the current device is faulty. If not, proceed to step 5; if yes, proceed to step 6. Step 5: Apply electrical stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and repeat step 1; wherein the applied electrical stress time is increased successively. Step 6: Based on all the trap information obtained from the gallium oxide Schottky barrier diode sample before and after applying electrical stress, the evolution process of the traps in the gallium oxide Schottky barrier diode sample after applying electrical stress is obtained.

2. The method for testing the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode according to claim 1, characterized in that, The gallium oxide Schottky barrier diode is a gallium oxide Schottky barrier diode with a conventional structure.

3. A testing device for the evolution of traps after electrical stress in a gallium oxide Schottky barrier diode, characterized in that, A test apparatus for performing the post-stress trap evolution of a gallium oxide Schottky barrier diode as described in claim 1 or 2, the test apparatus comprising: The deep-level transient spectrum testing module is used to perform deep-level transient spectrum testing on the current gallium oxide Schottky barrier diode sample to obtain the deep-level transient spectrum test results. Specifically, when performing the deep-level transient spectrum test for the first time, the current gallium oxide Schottky barrier diode sample is the initial gallium oxide Schottky barrier diode sample. The deep-level transient spectrum test results include the concentration, energy level, and trapping cross-section corresponding to different majority carrier traps in the device of the current gallium oxide Schottky barrier diode sample. Variable-temperature low-frequency noise testing is used to perform variable-temperature low-frequency noise testing on current gallium oxide Schottky barrier diode samples to obtain variable-temperature low-frequency noise test results; wherein, the variable-temperature low-frequency noise test results include the concentration and energy level of traps in the device; The trap type determination module is used to compare the currently obtained deep-level transient spectrum test results and variable-temperature low-frequency noise test results to determine the majority and minority carrier traps in the current gallium oxide Schottky barrier diode sample; the deep-level transient spectrum test results and variable-temperature low-frequency noise test results after trap type determination are used as trap information; The failure determination module is used to determine whether the current device has failed. If not, the processing of the applied electrical stress module is executed; if so, the processing of the trap evolution process analysis module is executed. An electric stress application module is used to apply electric stress to the current gallium oxide Schottky barrier diode sample for a certain period of time, and then execute the processing of the deep energy level transient spectrum test module again; wherein, the time of the electric stress applied by the electric stress application module is increased successively; The trap evolution process analysis module is used to obtain the evolution process of traps in the gallium oxide Schottky barrier diode sample after applying electrical stress, based on all trap information obtained before and after applying electrical stress.

4. An electronic device, characterized in that, It includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; The memory is used to store computer programs; When the processor executes the program stored in the memory, it implements the steps of the method described in any one of claims 1-2.

5. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the method described in any one of claims 1-2.

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