A split-type gas spray assembly for semiconductor equipment

Abstract

This invention discloses a split-type gas spray assembly for semiconductor equipment, including a main housing, which is a cylindrical sleeve with an upwardly extending inner cavity formed in the center of its bottom surface. An air inlet is formed in the center of the top plate of the main housing. A gas distribution plate is provided in the center of the inner cavity, with multiple upwardly extending protrusions formed on the top surface of the gas distribution plate. Multiple gas distribution holes are formed on the gas distribution plate around the protrusions, and multiple second gas distribution holes are also formed on the gas distribution plate. A downwardly extending central through-hole is formed in the center of the top surface of the protrusion formed at the center of the gas distribution plate. A jetting plate is fixed to the bottom of the main housing, covering the bottom of the inner cavity. The gas is initially dispersed by the gas distribution plate from the air inlet, and then further dispersed into all the jetting holes through the gas distribution holes and second gas distribution holes, ensuring uniform gas flow from all the jetting holes and guaranteeing a more even airflow onto the wafer surface, thus ensuring a good coating effect.

Description

Technical fields:

[0001] This invention relates to the field of semiconductor processing equipment technology, and more specifically to a split-type gas spray assembly for semiconductor equipment. Background technology:

[0002] Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a method of epitaxy in which gas is excited to generate low-temperature plasma, enhancing the chemical reactivity of the reactants. Specifically, the PECVD apparatus introduces the reactant gas into the reaction chamber through an inlet device, controlling the pressure, temperature, and other reaction conditions within the chamber to induce a reaction and complete the deposition process. To ensure uniform flow of the reactant gas to the wafer surface, a gas distributor is used to divert the gas, allowing it to diffuse after entering the spray head from the inlet pipe, ensuring the entire wafer is covered by the reactant gas and improving coating quality.

[0003] However, existing plasma-enhanced chemical vapor deposition (PECVD) devices have overly simple gas-blocking structures. Typically, the top plate of the gas-blocking housing has an inlet hole formed in the middle, and the bottom plate has multiple cylindrical jet holes. This structure causes the gas entering through the inlet hole to concentrate at the jet hole in the middle of the bottom plate, while the gas flow around the jet holes is very small. This results in uneven gas distribution as the gas flows toward the wafer surface, leading to poor film quality. Summary of the Invention:

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a split-type gas spray assembly for semiconductor equipment. It disperses the gas entering from the inlet through the gas distribution plate, and then disperses it a second time through the gas distribution through the gas distribution through the second gas distribution through the ...

[0005] The solution of the present invention to the aforementioned technical problem is:

[0006] A split-type gas spray assembly for semiconductor equipment includes a main housing, which is a cylindrical sleeve with an upwardly extending inner cavity formed in the center of its bottom surface. An air inlet hole is formed in the center of the top plate of the main housing. A gas distribution plate is provided in the center of the inner cavity. Multiple upwardly extending bosses are formed on the top surface of the gas distribution plate. Multiple gas distribution holes are formed on the gas distribution plate around the bosses. Multiple second gas distribution holes are also formed on the gas distribution plate. A downwardly extending central through hole is formed in the center of the top surface of the boss formed at the center of the gas distribution plate.

[0007] A jet plate is fixed to the bottom of the main housing, covering the bottom of the inner cavity. Multiple jet holes are formed on the jet plate, and all jet holes are evenly distributed on the jet plate.

[0008] An annular groove is formed on the bottom inner wall of the inner cavity, and an internal thread is formed on the inner wall of the annular groove. The edge of the air distribution plate is inserted into the annular groove, and an upwardly extending sleeve is formed on the top edge of the jet plate. The external thread formed on the outer wall of the sleeve is screwed onto the internal thread of the annular groove, and the edge of the air distribution plate is clamped between the top surface of the sleeve and the top surface of the annular groove.

[0009] The top surface of the boss formed at the center of the air distribution plate has a downwardly extending groove formed in the middle of its top surface, and a central through hole is formed in the middle of the bottom surface of the groove.

[0010] The top surface of the annular groove is formed with a first sealing annular groove, and a first sealing ring is nested in the first sealing annular groove. The bottom surface of the first sealing ring presses against the top surface of the edge of the air distribution plate. The top surface of the sleeve part is formed with a second sealing annular groove, and a second sealing ring is nested in the second sealing annular groove. The top surface of the second sealing ring presses against the bottom surface of the edge of the air distribution plate.

[0011] The top edge of the jet plate presses against the bottom edge of the main housing.

[0012] The top surface of the air distribution plate has a protrusion at its center. Around the central protrusion, the top surface of the air distribution plate has six protrusions evenly distributed around the central axis of the air distribution plate. On the outer side of the six protrusions, the top surface of the air distribution plate has twelve protrusions evenly distributed around the central axis of the air distribution plate.

[0013] The outstanding effects of this invention are:

[0014] It establishes multiple protrusions above the gas distribution plate, so that when the gas flows through the gas distribution plate, the protrusions divide the gas and flow it evenly to the jet plate below, thus solving the problem of uneven gas flow to the wafer.

[0015] Its central boss has a lower groove, and a central through hole is formed in the middle of the bottom surface of the lower groove, so that gas can continuously flow downward from the central through hole at the very center. The lower groove has a certain gas storage effect, preventing the gas from dispersing outward at once and causing no gas to flow down from the central through hole at the central boss, thus ensuring gas uniformity.

[0016] Its air distribution plate has different diameters for the air distribution holes and the second air distribution hole. The air holes are larger in areas with high flow resistance and smaller in areas with low flow resistance, ensuring that the gas flowing from the air distribution plate to the jet plate is more uniform.

[0017] The jet through-holes in its jet plate include an upper tapered section, a middle transition section, and a lower tapered section. The upper tapered section has a larger inner diameter at the top and a smaller inner diameter at the bottom, while the lower tapered section has a smaller inner diameter at the top and a larger inner diameter at the bottom. Its structure is similar to that of a Laval tube, which makes the jetting more uniform and solves the problem of insufficient uniformity when the gas flows to the wafer. Attached image description:

[0018] Figure 1 This is a partial structural schematic diagram of the present invention;

[0019] Figure 2 This is a partial cross-sectional view of the present invention;

[0020] Figure 3 This is a partial sectional view from another sectional view position of the present invention;

[0021] Figure 4 yes Figure 2 A magnified view of a portion of the image;

[0022] Figure 5 yes Figure 3 A magnified view of a portion of the image;

[0023] Figure 6 This is a partial structural diagram of the air distribution plate of the present invention;

[0024] Figure 7 This is a partial bottom view of the present invention;

[0025] Figure 8 This is a simulation result diagram of the gas flow of the present invention;

[0026] Figure 9 This is another simulation result diagram of gas flow in this invention. Detailed implementation method:

[0027] For example, see below. Figures 1 to 7 As shown, a split-type gas spray assembly for semiconductor equipment includes a main housing 10, which is a cylindrical sleeve with an upwardly extending inner cavity 11 formed in the center of its bottom surface. An air inlet 12 is formed in the center of the top plate of the main housing 10, which communicates with the inner cavity 11. A gas distribution plate 20 is provided in the center of the inner cavity 11. A plurality of upwardly extending bosses 21 are formed on the top surface of the gas distribution plate 20. A plurality of gas distribution holes 22 are formed on the gas distribution plate 20 around the bosses 21. A plurality of second gas distribution holes 23 are also formed on the gas distribution plate 20. A downwardly extending central through hole 211 is formed in the center of the top surface of the bosses 21 formed at the center of the gas distribution plate 20.

[0028] The top surface of the air distribution plate 20 has a protrusion 21 formed at the center. Around the central protrusion, the top surface of the air distribution plate 20 has six protrusions 21 evenly distributed around the central axis of the air distribution plate 20. The six protrusions 21 are six central protrusions. The top surface of the air distribution plate 20 outside the six protrusions 21 has twelve protrusions 21 evenly distributed around the central axis of the air distribution plate 20. These twelve protrusions 21 are twelve external protrusions. Each protrusion 21 has an air distribution hole 22 formed on the front part and the rear part of the air distribution plate 20 on the left and right sides.

[0029] Each pair of external protrusions and one of the corresponding central protrusions are arranged in a triangle to form a triangular group of protrusions. An air distribution hole 22 is formed in the middle of the air distribution plate 20 between these three protrusions 21.

[0030] Three second air distribution holes 23 arranged in a straight line are formed on the top surface of the air distribution plate 20 between each pair of adjacent triangular protrusions.

[0031] Each of the air distribution holes 22 includes an upper conical hole section, a middle transition hole section, and a lower conical hole section. The upper conical hole section has a larger inner diameter at the upper end and a smaller inner diameter at the lower end, while the lower conical hole section has a smaller inner diameter at the upper end and a larger inner diameter at the lower end. The middle transition hole section is a cylindrical hole section. The lower end of the upper conical hole section is formed together with and communicates with the top end of the middle transition hole section, and the bottom end of the middle transition hole section is formed at and communicates with the upper end of the lower conical hole section. The second air distribution hole 23 includes a vertical cylindrical hole section and a bottom conical hole section. The upper small-diameter hole section of the conical hole section is formed together with and communicates with the bottom end of the vertical cylindrical hole section. The top end of the vertical cylindrical hole section extends out of the top surface of the air distribution plate 20, and the lower large-diameter hole section of the conical hole section extends out of the bottom surface of the air distribution plate 20.

[0032] Meanwhile, the inner diameter of the vertical cylindrical section of the second air distribution hole 23 is smaller than the inner diameter of the intermediate transition section of the air distribution hole 22. The flow resistance around its protrusion 21 is large, therefore the inner diameter of the air distribution hole 23 around it is large to ensure a large volume of gas exiting from the protrusion, while the flow resistance in other areas is small. The second air distribution hole 23 only needs a small inner diameter to meet the gas flow requirements, ensuring that the gas flowing from the air distribution plate 20 to the jet plate 30 is relatively uniform.

[0033] The above distribution ensures that the gas exits more evenly after passing through the gas distributor 20.

[0034] A jet plate 30 is fixed to the bottom of the main housing 10. The jet plate 30 covers the bottom of the inner cavity 11. Multiple jet through holes 31 are formed on the jet plate 30. All jet through holes 31 are evenly distributed on the jet plate 30.

[0035] Furthermore, an annular groove is formed on the inner sidewall of the bottom of the inner cavity 11, and an internal thread is formed on the inner sidewall of the annular groove. The edge of the air distribution plate 20 is inserted into the annular groove, and an upwardly extending sleeve portion 32 is formed on the top edge of the jet plate 30. The external thread formed on the outer wall of the sleeve portion 32 is screwed onto the internal thread of the annular groove. The edge of the air distribution plate 20 is clamped between the top surface of the sleeve portion 32 and the top surface of the annular groove. The main housing 10, the air distribution plate 20, and the jet plate 30 are detachable structures, facilitating replacement, maintenance, and repair.

[0036] Furthermore, the top surface of the boss 21 formed at the center of the air distribution plate 20 has a downwardly extending groove 212 formed in the middle of its top surface, and a central through hole 211 is formed in the middle of the bottom surface of the groove 212.

[0037] Furthermore, the top surface of the annular groove is formed with a first sealing annular groove, the first sealing ring 1 is nested in the first sealing annular groove, the bottom surface of the first sealing ring 1 is pressed against the top surface of the edge of the air distribution plate 20, the top surface of the sleeve part 32 is formed with a second sealing annular groove, the second sealing ring 2 is nested in the second sealing annular groove, and the top surface of the second sealing ring 2 is pressed against the bottom surface of the edge of the air distribution plate 20.

[0038] Furthermore, the top edge of the jet plate 30 presses against the bottom edge of the main housing 10.

[0039] Furthermore, the jet through-hole 31 and the gas distribution through-hole 22 have the same structure, which is similar to that of the Laval tube, making the jet more uniform and solving the problem of insufficient uniformity of gas flow to the wafer.

[0040] In this embodiment, the upper tapered section of the jet through-hole 31 and the air distribution through-hole 22 has a maximum diameter of 2mm, a minimum diameter of 1mm, and a height of 1.5mm. The middle transition section has a diameter of 1mm and a height of 1mm. The lower tapered section has a minimum diameter of 1mm, a maximum diameter of 1.5mm, and a height of 0.5mm.

[0041] Of all the jet holes 31, six corresponding adjacent jet holes 31 form a hexagonal jet hole group, with the center of the jet hole 31 being the vertex of the hexagon; all jet hole groups are densely distributed on the jet plate 30 with the central axis of the jet plate 30 as the center.

[0042] The top surface of the inner cavity 11 of the main housing 10 is 3 mm away from the air distribution plate 20, and the air distribution plate 20 is 5 mm away from the jet plate 30.

[0043] Working principle: When the gas entering through the air inlet 12 reaches the air distribution plate 20, it is blocked by the boss 21 and its speed will decrease. A small part of the gas flows through the central through hole 211 in the central boss 21 to the lower jet plate 30, while the rest of the gas will diffuse evenly to the surroundings. When the airflow passes through the boss 21, it will continue to move forward along both sides of the boss 21, thereby achieving the effect of air distribution.

[0044] The flow resistance around the boss 21 is relatively large, so the diameter of the air distribution hole 22 is set to be relatively large. The flow resistance in other areas is small, so the diameter of the second air distribution hole 23 is set to be relatively small. This design makes the gas flow more evenly when it flows to the jet plate 30 below.

[0045] like Figure 8 and Figure 9 The simulation results of gas flow show that after the gas is ejected through the gas distribution plate 20, the speed is reduced by an order of magnitude, and the gas flow velocity spreading to the surroundings is relatively uniform. The gas then flows to the wafer through the jet holes 31 on the jet plate 30, which further makes the gas distribution more uniform, thus covering the entire wafer.

Claims

1. A split-type gas spray assembly for semiconductor equipment, comprising a main housing (10), characterized in that: The main housing (10) is a cylindrical sleeve with an upwardly extending inner cavity (11) formed in the middle of its bottom surface. An air inlet hole (12) is formed in the middle of the top plate of the main housing (10). An air distribution plate (20) is provided in the middle of the inner cavity (11). Multiple upwardly extending bosses (21) are formed on the top surface of the air distribution plate (20). Multiple air distribution holes (22) are formed on the air distribution plate (20) around the bosses (21). Multiple second air distribution holes (23) are also formed on the air distribution plate (20). A downwardly extending central through hole (211) is formed in the middle of the top surface of the boss (21) formed at the center of the air distribution plate (20). The bottom of the main housing (10) is fixed with a jet plate (30), which covers the bottom of the inner cavity (11). Multiple jet through holes (31) are formed on the jet plate (30), and all jet through holes (31) are evenly distributed on the jet plate (30). An annular groove is formed on the bottom inner wall of the inner cavity (11), and an internal thread is formed on the inner wall of the annular groove. The edge of the air distribution plate (20) is inserted into the annular groove. An upwardly extending sleeve part (32) is formed on the top edge of the jet plate (30). The external thread formed on the outer wall of the sleeve part (32) is screwed onto the internal thread of the annular groove. The edge of the air distribution plate (20) is clamped between the top surface of the sleeve part (32) and the top surface of the annular groove. The jet through-hole (31) and the air distribution through-hole (22) both include an upper conical hole section, a middle transition hole section and a lower conical hole section. The upper conical hole section has a large inner diameter at the upper end and a small inner diameter at the lower end. The lower conical hole section has a small inner diameter at the upper end and a large inner diameter at the lower end. The middle transition hole section is a cylindrical hole section. The lower end of the upper conical hole section is formed together with the top end of the middle transition hole section and is connected. The bottom end of the middle transition hole section is formed at the upper end of the lower conical hole section and is connected. The second air distribution hole (23) includes a vertical cylindrical hole section and a bottom conical hole section. The upper small-diameter hole section of the conical hole section is formed together with the bottom end of the vertical cylindrical hole section and is connected. The top end of the vertical cylindrical hole section extends out of the top surface of the air distribution plate (20), and the lower large-diameter hole section of the conical hole section extends out of the bottom surface of the air distribution plate (20).

2. The split-type gas spray assembly for semiconductor equipment according to claim 1, characterized in that: The top surface of the top surface of the top boss (21) formed at the center of the gas distribution plate (20) has a downwardly extending groove (212) formed in the middle of the top surface, and a central through hole (211) is formed in the middle of the bottom surface of the groove (212).

3. The split-type gas spray assembly for semiconductor equipment according to claim 1, characterized in that: The top surface of the annular groove is formed with a first sealing annular groove, and the first sealing ring (1) is nested in the first sealing annular groove. The bottom surface of the first sealing ring (1) presses against the top surface of the side of the air distribution plate (20). The top surface of the sleeve part (32) is formed with a second sealing annular groove, and the second sealing ring (2) is nested in the second sealing annular groove. The top surface of the second sealing ring (2) presses against the bottom surface of the side of the air distribution plate (20).

4. A split-type gas spray assembly for semiconductor equipment according to claim 1, characterized in that: The top edge of the jet plate (30) presses against the bottom edge of the main housing (10).

5. A split-type gas spray assembly for semiconductor equipment according to claim 1, characterized in that: The top surface of the air distribution plate (20) has a boss (21) formed at the center. The top surface of the air distribution plate (20) around the boss (21) at the center has six bosses (21) evenly distributed around the central axis of the air distribution plate (20). The top surface of the air distribution plate (20) outside the six bosses (21) has twelve bosses (21) evenly distributed around the central axis of the air distribution plate (20).

6. A split-type gas spray assembly for semiconductor equipment according to claim 1, characterized in that: The inner diameter of the vertical cylindrical section of the second air distribution hole (23) is smaller than the inner diameter of the intermediate transition section of the air distribution hole (22).

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