Simulation method of nbti and total dose coupling effect of fdsoi device

Abstract

The application provides a simulation method for NBTI and total dose coupling effect of an FDSOI device, and relates to the technical field of semiconductor devices. In the simulation method for NBTI and total dose coupling effect of the FDSOI device, a pre-established two-dimensional device structure model is imported into an sdevice instruction file, a first sdevice instruction file is generated, and Trap addition, NBTI simulation physical model addition and total dose radiation effect setting processing are performed based on the first sdevice instruction file, so that a simulation result for NBTI and total dose coupling effect is finally obtained, the correlation between the total dose radiation effect and the reliability of the device itself is realized, and the reliability and flexibility of the device in simulation verification are improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor device technology, specifically relating to a simulation method for the NBTI and total dose coupling effect of an FDSOI device. Background Technology

[0002] With the rapid development of the semiconductor industry, ordinary bulk silicon MOS devices can no longer meet industry demands. Fully depleted silicon-on-insulator (FDSOI) devices have become a viable alternative to bulk silicon devices due to their superior gate control and lower leakage current. Because FDSOI employs a fully dielectric isolation structure, it exhibits significant advantages in single-event and dose rate resistance, making it promising for applications in aerospace and military fields. However, this fully dielectric isolation structure also makes FDSOI sensitive to total dose effects, making radiation degradation analysis more difficult. Furthermore, FDSOI devices still face the reliability issues inherent in bulk silicon devices, including hot carrier injection (HCI), time-dependent dielectric breakdown (TDDB), and negative bias temperature instability (NBTI).

[0003] Studies have shown that the NBTI effect ultimately limits the lifespan of nanodevices due to its impact on their reliability. Electronic devices used in space face harsh environments with high-energy particle radiation and extreme temperatures. Radiation damage caused by high-energy particles in the radiation environment can affect the reliability degradation of the devices themselves, posing challenges to device evaluation and performance prediction. Therefore, to ensure the safety of spaceborne electronic systems, it is urgent to study the total dose radiation effect, inherent reliability, and the correlation between the two of FDSOI devices. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides a simulation method for the NBTI and total dose coupling effect of FDSOI devices.

[0005] The technical problem to be solved by this invention is achieved through the following technical solution:

[0006] In a first aspect, the present invention provides a simulation method for the NBTI and total dose coupling effect of an FDSOI device, comprising:

[0007] The first sdevice instruction file is generated by calling a pre-established two-dimensional device structure model using the calling instructions in the sdevice instruction file.

[0008] Add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file;

[0009] The total dose radiation effect is set in the second sdevice command file to obtain the third sdevice command file;

[0010] Add the third sdevice instruction file to the simulation project folder, and use quasi-static scanning and the pre-built first sdevice component to perform instantaneous simulation on the third sdevice instruction file, obtain instantaneous simulation state information and save it in the first tdr file;

[0011] The second tdr file is obtained by loading the first tdr file from the pre-built second sdevice component and simulating it.

[0012] Select the data you want to observe in the second TDR file to obtain the PLT file;

[0013] Open the plt file in the Svisual component to obtain the simulation results of the coupling effect between NBTI and total dose.

[0014] Optionally, the process of establishing a pre-built two-dimensional device structure model includes:

[0015] Based on the device's two-dimensional structural information and the SDE component of the TCAD simulation tool, a two-dimensional device structure model of the FDSOI device is established; the device's two-dimensional structural information includes: device material, device geometry, dimensions, and mesh information.

[0016] Optionally, a Trap and NBTI simulation physical model are added to the first sdevice instruction file to obtain a second sdevice instruction file, which includes:

[0017] The physics keyword in the first sdevice instruction file is invoked so that the physics keyword can obtain the physical information of the selected area input by the user;

[0018] Add the name of the selected area after the keyword "physics" to generate the selected area according to the physical information;

[0019] By adding the keywords "trap" and "NBTI" to the selected area using the first sdevice instruction file, a second sdevice instruction file is obtained.

[0020] Optionally, the selected area includes: the gate oxide layer, the buried oxide layer, and the contact area between the gate oxide layer and the trench.

[0021] Optionally, the total dose radiation effect settings include: adding a device radiation model, setting the irradiation dose rate and irradiation time.

[0022] Optionally, before performing transient simulation of the third sdevice instruction file using the pre-established first sdevice component, the simulation method for the NBTI and total dose coupling effect of the FDSOI device further includes:

[0023] In the third sdevice instruction file, the bias state of the device is set, and the corresponding initial state of the device voltage is set according to the bias state.

[0024] Optionally, the bias states include: on, off, and transmission states.

[0025] Optionally, the device bias state is set in the third sdevice instruction file, and the corresponding device voltage initial state is set according to the bias state, including:

[0026] When the bias state is on, the initial state of the device voltage is:

[0027] Vg=-VDD, Vd=Vs=Vsub=0V;

[0028] When the bias state is off, the initial state of the device voltage is:

[0029] Vd=-VDD, Vg=Vs=Vsub=0V;

[0030] When the bias state is in the transmission state, the initial state of the device voltage is:

[0031] Vd=Vs=-VDD, Vg=Vsub=0V;

[0032] Where Vg represents the gate voltage, Vs represents the source voltage, Vd represents the drain voltage, Vsub represents the substrate voltage, and VDD represents the operating voltage.

[0033] Secondly, the present invention provides a simulation device for the coupling effect of NBTI and total dose of FDSOI devices, comprising: a calling unit, an adding unit, a setting unit, a simulation unit, a selection unit, and an acquisition unit;

[0034] The calling unit is used to call a pre-established two-dimensional device structure model using the calling instructions in the sdevice instruction file, and generate the first sdevice instruction file;

[0035] The added unit is used to add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file;

[0036] The setting unit is used to set the total dose radiation effect in the second sdevice instruction file to obtain the third sdevice instruction file;

[0037] The simulation unit is used to add the third sdevice instruction file to the simulation project folder, and use the pre-built first sdevice component and quasi-static scanning to perform instantaneous simulation on the third sdevice instruction file, obtain instantaneous simulation state information and save it in the first tdr file;

[0038] The simulation unit is also used to load the first tdr file from the pre-established second sdevice component and simulate to obtain the second tdr file;

[0039] Select the cell to use, then select the data to be observed in the second tdr file to obtain the plt file;

[0040] The acquisition unit is used to open the plt file under the Svisual component and obtain the simulation results of the coupling effect between NBTI and total dose.

[0041] Thirdly, the present invention provides a simulation system for the NBTI and total dose coupling effect of an FDSOI device, comprising: a processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor, and when the system is running, the processor communicates with the storage medium via the bus, and the processor executes the machine-readable instructions to perform the steps of the method described in the first aspect above.

[0042] This invention provides a simulation method for the coupling effect of NBTI and total dose in FDSOI devices, comprising: calling a pre-established two-dimensional device structure model using a call command in the sdevice command file to generate a first sdevice command file; adding a Trap and NBTI simulation physical model to the first sdevice command file to obtain a second sdevice command file; setting the total dose radiation effect in the second sdevice command file to obtain a third sdevice command file; adding the third sdevice command file to the simulation project folder, and performing a transient simulation on the third sdevice command file using a quasi-static scan and the pre-established first sdevice component to obtain transient simulation state information and save it in a first tdr file; loading the first tdr file by the pre-established second sdevice component and simulating to obtain a second tdr file; selecting the data to be observed in the second tdr file to obtain a plt file; opening the plt file in the Svisual component to obtain the simulation results of the coupling effect of NBTI and total dose. In this invention, a first sdevice instruction file is generated by importing a pre-established two-dimensional device structure model into the sdevice instruction file. Based on the first sdevice instruction file, subsequent Trap additions, NBTI simulation physical model additions, and total dose radiation effect settings are performed. Finally, the simulation results of the coupling effect between NBTI and total dose are obtained, realizing the correlation study between the total dose radiation effect and the device's own reliability, and improving the reliability and flexibility of the device in simulation verification.

[0043] The present invention will now be described in further detail with reference to the accompanying drawings. Attached Figure Description

[0044] Figure 1 A schematic flowchart illustrating the simulation method for the NBTI and total dose coupling effect of the FDSOI device provided in this embodiment of the invention;

[0045] Figure 2 A schematic diagram of a pre-established two-dimensional device structure model provided for an embodiment of the present invention;

[0046] Figure 3 The total dose and the transfer characteristic curves of the PMOS device before and after NBTI simulation are provided for embodiments of the present invention;

[0047] Figure 4 The total dose and the distribution of trap charge in the gate oxide layer and channel layer after NBTI simulation are provided for embodiments of the present invention as a function of NBTI stress and time.

[0048] Figure 5A schematic diagram of the structure of a simulation device for the NBTI and total dose coupling effect of an FDSOI device provided in an embodiment of the present invention;

[0049] Figure 6 This is a schematic diagram of a simulation system for the NBTI and total dose coupling effect of an FDSOI device provided in an embodiment of the present invention. Detailed Implementation

[0050] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0051] To study the correlation between total dose radiation effect and device reliability, and to improve the reliability and flexibility of the device in simulation verification, this invention provides a simulation method for the coupling effect of NBTI and total dose on FDSOI devices. Figure 1 This is a schematic flowchart illustrating the simulation method for the NBTI and total dose coupling effect of the FDSOI device provided in this embodiment of the invention, as shown below. Figure 1 As shown, the simulation method for the NBTI and total dose coupling effect of this FDSOI device includes:

[0052] S101. Use the calling instructions in the sdevice instruction file to call the pre-established two-dimensional device structure model and generate the first sdevice instruction file;

[0053] It should be noted that the first sdevice instruction file is an instruction file generated for the pre-established two-dimensional device structure model in the embodiments of the present invention, which includes the device material, device geometry, size and mesh information of the pre-established two-dimensional device structure model.

[0054] Optionally, in this embodiment of the invention, the process of establishing the pre-established two-dimensional device structure model includes:

[0055] Based on the device's two-dimensional structural information and the SDE component of the TCAD simulation tool, a two-dimensional device structure model of the FDSOI device is established; the device's two-dimensional structural information includes: device material, device geometry, dimensions, and mesh information.

[0056] Furthermore, in this embodiment of the invention, the device material needs to be replaced from the default SiO2 material to OxideAssemiconductor material using the sdevice command file. The reason for this step is that charge carriers cannot appear in the insulating material in the TCAD simulation tool, but the generation of electron-hole pairs in the gate oxide layer and buried oxide layer (BOX layer) needs to be simulated in the total dose simulation. The gate oxide layer and BOX layer use SiO2, which is an insulating material. Replacing the SiO2 material with OxideAssemiconductor material, and replacing the parameters of the OxideAssemiconductor material with those of the SiO2 material, allows for the generation of electron-hole pairs while retaining the parameters of the SiO2 material.

[0057] To clearly illustrate the structure of the pre-established two-dimensional device structure model provided in the embodiments of the present invention, Figure 2 This is a schematic diagram of a pre-established two-dimensional device structure model provided for an embodiment of the present invention. (See attached diagram.) Figure 2 Figure (a) shows a schematic diagram of the pre-established two-dimensional device structure model without a mesh, provided by the present invention; from Figure 2 As shown in Figure (a), the two-dimensional device structure model, from bottom to top, includes: substrate, back gate doped layer, buried oxide layer, channel, gate oxide layer, and gate dielectric layer. The left and right sides of the channel are the source and drain regions, respectively. Figure 2 Figure (b) shows a schematic diagram of the pre-established two-dimensional device structure model with a mesh provided by the present invention. Figure 2 Figure (b) and Figure 2 The structure of the two-dimensional device model in Figure (a) is consistent with that in Figure 2, and will not be described again here. It should be noted that... Figure 2 Figure (b) and Figure 2 Figure (a) shows the numbers and color areas in the substrate, representing the doping concentration corresponding to the color of the layer of the device.

[0058] S102. Add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file;

[0059] Optionally, in this embodiment of the invention, S102 may specifically include:

[0060] The physics keyword in the first sdevice instruction file is invoked so that the physics keyword can obtain the physical information of the selected area input by the user;

[0061] Add the name of the selected area after the keyword "physics" to generate the selected area according to the physical information;

[0062] By adding the keywords "trap" and "NBTI" to the selected area using the first sdevice instruction file, a second sdevice instruction file is obtained.

[0063] It should be noted that, in this embodiment of the invention, the second sdevice instruction file is an instruction file generated based on NBTI simulation. The NBTI simulation physical model includes two types: TDM (Trap Degradation Model) and TSNDM (Two Stage NBTI Degradation Model). Specifically, TDM is a model developed based on reaction-diffusion theory, used to simulate the process of Si-H bond breakage to form traps on the model interface of the first sdevice instruction file under NBTI stress, and the trap-captured charges forming trap charges. TSNDM is used to simulate the trap-captured charges that already exist on the model interface of the first sdevice instruction file before the application of NBTI stress, and the process of trap charge formation.

[0064] Furthermore, in this embodiment of the invention, adding the `Degradation` keyword to the `Trap` declaration in the first `sdevice` instruction file activates the TDM. Secondly, modifications to parameters such as the initial interface trap density, maximum interface trap density, reaction constant, and diffusion coefficient of the TDM can also be determined in the `Degradation` keyword. Adding the `NBTI` keyword to the `Trap` declaration in the first `sdevice` instruction file activates the TSNDM. Secondly, parameter information such as trap density and number of samples can also be determined in the `NBTI` keyword.

[0065] Optionally, in this embodiment of the invention, the selected area includes: the gate oxide layer, the buried oxide layer, and the contact area between the gate oxide layer and the channel.

[0066] S103. Set the total dose radiation effect in the second sdevice command file to obtain the third sdevice command file;

[0067] Optionally, in this embodiment of the invention, the total dose radiation effect setting includes: adding a device radiation model, setting the irradiation dose rate and irradiation time.

[0068] It should be noted that, in this embodiment of the invention, the third sdevice instruction file is the instruction file generated by performing the NBTI and total dose coupling simulation. In this embodiment of the invention, the Radiation model can be added and activated using the physics keyword in the second sdevice instruction file.

[0069] Optionally, in one implementation of the present invention, the irradiation dose rate (total dose effect dose rate) can be set to 100 rad (SiO2) / s, the irradiation time can be set to 10000s, and the corresponding total dose can be set to 1000 krad (SiO2).

[0070] S104. Add the third sdevice instruction file to the simulation project folder, and use quasi-static scanning and the pre-built first sdevice component to perform instantaneous simulation on the third sdevice instruction file, obtain instantaneous simulation state information and save it in the first tdr file.

[0071] S105. Load the first tdr file from the pre-established second sdevice component and simulate to obtain the second tdr file;

[0072] It should be noted that in S105, the bias state of the device also needs to be set, and the bias state voltage needs to be set to be higher than the bias state voltage of the device set in the third sdevice instruction file. In addition, the start time and end time of the simulation can be set to 0s and 10000s respectively.

[0073] S106. Select the data to be observed in the second tdr file to obtain the plt file;

[0074] S107. Open the plt file in the Svisual component to obtain the simulation results of the coupling effect between NBTI and total dose.

[0075] It should be noted that, in this embodiment of the invention, the transfer characteristic curve of the PMOS device after total dose and NBTI stress can be viewed by opening the plt file using the Svisual component, as well as the distribution of trap charge over time. Figure 3 The total dose and transfer characteristic curves of the PMOS device before and after NBTI simulation are provided for embodiments of the present invention. The horizontal axis Vg represents the gate voltage, the vertical axis Id represents the drain current, the dark line (Fresh) represents the transfer characteristic curve before irradiation and NBTI stress, and the light line (After_TID_NBTI) represents the transfer characteristic curve after irradiation and NBTI stress. Figure 3 The degradation of electrical parameters of PMOS devices after exposure to irradiation and NBTI stress can be observed. Figure 4 The total dose and the distribution of trap charge in the gate oxide layer and channel layer after NBTI simulation are provided for embodiments of the present invention, wherein... Figure 4 The horizontal axis represents the time of NBTI stress application, and the vertical axis represents the amount of interface trap charge generated. According to... Figure 4It can analyze the degradation mechanism of PMOS devices under total dose and NBTI coupling effect.

[0076] This invention provides a simulation method for the coupling effect of NBTI and total dose in an FDSOI device, comprising: calling a pre-established two-dimensional device structure model using a call instruction in the sdevice instruction file to generate a first sdevice instruction file; adding a Trap and NBTI simulation physical model to the first sdevice instruction file to obtain a second sdevice instruction file; setting the total dose radiation effect in the second sdevice instruction file to obtain a third sdevice instruction file; adding the third sdevice instruction file to the simulation project folder, and performing a transient simulation on the third sdevice instruction file using a quasi-static scan and the pre-established first sdevice component to obtain transient simulation state information and save it in a first tdr file; loading the first tdr file by the pre-established second sdevice component and simulating to obtain a second tdr file; selecting the data to be observed in the second tdr file to obtain a plt file; opening the plt file in the Svisual component to obtain the simulation results of the coupling effect of NBTI and total dose. In this embodiment of the invention, a first sdevice instruction file is generated by importing a pre-established two-dimensional device structure model into the sdevice instruction file. Based on the first sdevice instruction file, subsequent Trap additions, NBTI simulation physical model additions, and total dose radiation effect settings are performed. Finally, the simulation results of the coupling effect between NBTI and total dose are obtained, realizing the correlation study between the total dose radiation effect and the device's own reliability, and improving the reliability and flexibility of the device in simulation verification.

[0077] Optionally, before performing transient simulation of the third sdevice instruction file using the pre-established first sdevice component, the simulation method for the NBTI and total dose coupling effect of the FDSOI device further includes:

[0078] In the third sdevice instruction file, the bias state of the device is set, and the corresponding initial state of the device voltage is set according to the bias state.

[0079] Optionally, the bias states include: on, off, and transmission states.

[0080] Optionally, the device bias state is set in the third sdevice instruction file, and the corresponding device voltage initial state is set according to the bias state, including:

[0081] When the bias state is on, the initial state of the device voltage is:

[0082] Vg=-VDD, Vd=Vs=Vsub=0V;

[0083] When the bias state is off, the initial state of the device voltage is:

[0084] Vd=-VDD, Vg=Vs=Vsub=0V;

[0085] When the bias state is in the transmission state, the initial state of the device voltage is:

[0086] Vd=Vs=-VDD, Vg=Vsub=0V;

[0087] Where Vg represents the gate voltage, Vs represents the source voltage, Vd represents the drain voltage, Vsub represents the substrate voltage, and VDD represents the operating voltage.

[0088] It should be noted that the method provided in this embodiment of the invention can be applied to electronic devices. Specifically, the electronic device can be a desktop computer, a portable computer, a smart mobile terminal, a server, etc. No limitation is made here; any electronic device that can implement this invention falls within the protection scope of this invention.

[0089] Corresponding to a simulation method for the coupling effect of NBTI and total dose in an FDSOI device, this invention provides a simulation device for the coupling effect of NBTI and total dose in an FDSOI device. Figure 5 This is a schematic diagram of the simulation device for the NBTI and total dose coupling effect of the FDSOI device provided in the embodiments of the present invention, as shown in the figure. Figure 5 As shown, the simulation device for the coupling effect of NBTI and total dose of the FDSOI device includes: a calling unit 501, an adding unit 502, a setting unit 503, a simulation unit 504, a selection unit 505, and an acquisition unit 506.

[0090] The calling unit 501 is used to call a pre-established two-dimensional device structure model using the calling instructions in the sdevice instruction file to generate the first sdevice instruction file;

[0091] Unit 502 is used to add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file;

[0092] The setting unit 503 is used to set the total dose radiation effect in the second sdevice instruction file to obtain the third sdevice instruction file;

[0093] The simulation unit 504 is used to add the third sdevice instruction file to the simulation project folder, and use the pre-built first sdevice component and quasi-static scanning to perform instantaneous simulation on the third sdevice instruction file, obtain instantaneous simulation state information and save it in the first tdr file.

[0094] Simulation unit 504 is also used to load the first tdr file from the pre-established second sdevice component and simulate to obtain the second tdr file;

[0095] Select cell 505 for use, then select the data to be observed in the second tdr file to obtain the plt file;

[0096] Unit 506 is used to open the plt file under the Svisual component and obtain the simulation results of the coupling effect between NBTI and total dose.

[0097] Figure 6 This is a schematic diagram of a simulation system for the NBTI and total dose coupling effect of an FDSOI device provided in an embodiment of the present invention. The system includes a processor 710, a storage medium 720, and a bus 730. The storage medium 720 stores machine-readable instructions executable by the processor 710. When the system is running, the processor 710 communicates with the storage medium 720 via the bus 730. The processor 710 executes the machine-readable instructions to perform the steps of the above-described method embodiment. The specific implementation and technical effects are similar and will not be repeated here.

[0098] The storage medium may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage device. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor.

[0099] The processors mentioned above can be general-purpose processors, including central processing units (CPUs), network processors (NPs), etc.; they can also be digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0100] It should be noted that the terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this disclosure described herein can be implemented in orders other than those illustrated or described herein. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure.

[0101] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0102] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A simulation method for the coupling effect of NBTI and total dose in an FDSOI device, characterized in that, include: The first sdevice instruction file is generated by calling a pre-established two-dimensional device structure model using the calling instructions in the sdevice instruction file. Add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file; The total dose radiation effect is set in the second sdevice command file to obtain the third sdevice command file; Add the third sdevice instruction file to the simulation project folder, and use quasi-static scanning and the pre-built first sdevice component to perform instantaneous simulation on the third sdevice instruction file to obtain instantaneous simulation state information and save it in the first tdr file; The second tdr file is obtained by loading the first tdr file using a pre-established second sdevice component and simulating it. Select the data to be observed in the second tdr file to obtain the plt file; Open the plt file in the Svisual component to obtain the simulation results of the coupling effect between NBTI and total dose; The step of adding Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file includes: The physics keyword in the first sdevice instruction file is invoked so that the physics keyword can obtain the physical information of the selected area input by the user; Add the name of the selected region after the physics keyword to generate the selected region according to the physics information; The second sdevice instruction file is obtained by adding the keywords trap and NBTI to the selected area using the first sdevice instruction file.

2. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 1, characterized in that, The process of establishing the pre-established two-dimensional device structure model includes: Based on the device's two-dimensional structural information and the SDE component of the TCAD simulation tool, a two-dimensional device structure model of the FDSOI device is established; the device's two-dimensional structural information includes: device material, device geometry, dimensions, and mesh information.

3. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 1, characterized in that, The selected area includes: the gate oxide layer, the buried oxide layer, and the contact area between the gate oxide layer and the trench.

4. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 1, characterized in that, The total dose radiation effect settings include: adding a device radiation model, setting the irradiation dose rate and irradiation time.

5. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 1, characterized in that, Before performing transient simulation of the third sdevice instruction file using the pre-established first sdevice component, the simulation method for the NBTI and total dose coupling effect of the FDSOI device further includes: The bias state of the device is set in the third sdevice instruction file, and the corresponding initial state of the device voltage is set according to the bias state.

6. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 5, characterized in that, The bias states include: on, off, and transmission states.

7. The simulation method for the NBTI and total dose coupling effect of the FDSOI device according to claim 6, characterized in that, The step of setting the device bias state in the third sdevice instruction file and setting the corresponding initial device voltage state according to the bias state includes: When the bias state is on, the initial state of the device voltage is: Vg = -VDD, Vd = Vs = Vsub = 0V; When the bias state is off, the initial state of the device voltage is: Vd=-VDD, Vg=Vs=Vsub=0V; When the bias state is the transmission state, the initial state of the device voltage is: Vd=Vs=-VDD, Vg=Vsub=0V; Where Vg represents the gate voltage, Vs represents the source voltage, Vd represents the drain voltage, Vsub represents the substrate voltage, and VDD represents the operating voltage.

8. A simulation device for the coupling effect of NBTI and total dose in an FDSOI device, characterized in that, include: Calling a cell, adding a cell, setting a cell, simulating a cell, selecting a cell, and retrieving a cell; The calling unit is used to call a pre-established two-dimensional device structure model using the calling instructions in the sdevice instruction file to generate the first sdevice instruction file; The adding unit is used to add Trap and NBTI simulation physical models to the first sdevice instruction file to obtain the second sdevice instruction file. The setting unit is used to set the total dose radiation effect in the second sdevice instruction file to obtain the third sdevice instruction file; The simulation unit is used to add the third sdevice instruction file to the simulation project folder, and use the pre-established first sdevice component and quasi-static scanning to perform instantaneous simulation on the third sdevice instruction file, obtain instantaneous simulation state information and save it in the first tdr file; The simulation unit is also used to load the first tdr file from the pre-established second sdevice component and simulate to obtain the second tdr file; The selection unit is used to select the data to be observed in the second tdr file to obtain a plt file; The acquisition unit is used to open the plt file under the Svisual component and obtain the simulation results of the coupling effect between NBTI and total dose. The adding unit is specifically used to call the physics keyword in the first sdevice instruction file so that the physics keyword can obtain the physical information of the selected area input by the user. Add the name of the selected region after the physics keyword to generate the selected region according to the physics information; The second sdevice instruction file is obtained by adding the keywords trap and NBTI to the selected area using the first sdevice instruction file.

9. A simulation system for the coupling effect of NBTI and total dose in an FDSOI device, characterized in that, include: The system includes a processor, a storage medium, and a bus, wherein the storage medium stores machine-readable instructions executable by the processor, and when the system is running, the processor communicates with the storage medium via the bus, and the processor executes the machine-readable instructions to perform the steps of the method as described in any one of claims 1-7.

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