A deposition device for high-throughput preparation of SiC nanowires on a substrate surface and a method for preparing SiC nanowires

Abstract

The present application relates to a kind of substrate surface high flux preparation SiC nanowire deposition device and the method for preparing SiC nanowire.The substrate surface high flux preparation SiC nanowire deposition device includes: at least 2 or more graphite plate, a plurality of through holes are arranged in the graphite plate;For supporting and fixing the support device for graphite plate;And substrate support device for being placed on the upper surface of graphite plate and being used for the substrate or substrate hanging device for being hung on the lower surface of graphite plate and being used for the substrate.

Description

Technical Field

[0001] This invention relates to a method for preparing SiC nanowires, specifically an apparatus and method for high-throughput preparation of SiC nanowires on a substrate surface. The method mainly employs chemical vapor deposition to prepare SiC nanowires of various sizes on a substrate surface in the absence of a metal catalyst. Background Technology

[0002] SiC possesses excellent high-temperature strength, high wear resistance, high thermal conductivity, high chemical stability, and oxidation resistance, making it widely used in aerospace, automotive machinery, chemical, and electronics fields. One-dimensional SiC nanowires, in addition to the excellent properties of bulk SiC, also exhibit superior mechanical properties (elastic modulus and hardness) and optical properties (photoluminescence, hydrogen storage). In recent years, SiC nanowires have received widespread attention and research reports as a reinforcing agent in ceramic-based and metal-based composite materials, demonstrating tremendous application potential.

[0003] To date, scholars worldwide have employed various methods to prepare SiC nanowires of different sizes and morphologies, exhibiting diverse structures and forms, including nanowires, nanotubes, nanorods, and nanowhiskers. The main methods for preparing SiC nanowires include pyrolysis of organic precursors, carbothermal reduction, sol-gel methods, arc discharge methods, and chemical vapor deposition (CVD). The pyrolysis organic precursor method for preparing SiC nanowires mainly involves the pyrolysis of organic silicon-containing carbon precursors under high-temperature inert gas protection. Because a metal catalyst is required during the impregnation and pyrolysis process, the prepared SiC nanowires often suffer from heavy metal contamination, leading to low purity. The carbothermal reduction method uses inorganic carbon as a reducing agent, undergoing a redox reaction at specific temperatures and pressures. Its disadvantages include high preparation temperatures, high energy consumption, and high costs. Furthermore, the prepared SiC nanowires contain a large amount of residual carbon powder, silicon powder, and other substances, resulting in high impurity content and low purity. The sol-gel method disperses raw materials in an organic solvent, undergoes hydrolysis to generate active monomers, and then polymerizes to form a sol, thereby generating a certain shaped... The first method involves drying and heat treatment to form SiC nanowires from a gel-like substance. However, this method has high requirements for the carbon source and water content, and the degree of SiC nanowire aggregation varies under different acid and alkaline environments, resulting in numerous defects in the prepared SiC nanowires. The second method involves using graphite as the cathode and a silicon carbide rod containing a metal element (such as iron) as the anode, discharging under low pressure to obtain SiC nanowires. Its drawback is that the presence of the metal element iron can easily cause metal residues in the generated nanowires, resulting in low purity. The third method, chemical vapor deposition, has significant advantages in the preparation of SiC nanowires, such as low reaction temperature, controllable composition, high purity, and high crystallinity, making it the most promising method for preparing SiC nanowires.Currently, there are few reports on the preparation of SiC nanowires using CVD without a catalyst. Chinese patent application number 201010154550.0 discloses a catalyst-free method for preparing ultralong single-crystal β-SiC nanowires. Its characteristic is the use of carbon-containing gas as the carbon source, silicon monoxide or a mixture of silicon monoxide and silicon as the silicon source, and Ar or N as the carrier gas. The preparation is carried out at 1350–1600℃ and a gas pressure of 1.1–1.5 atm. Although β-SiC nanowires were successfully prepared, the excessively high nanowire preparation pressure (exceeding 10 atmospheres) places excessively high demands on equipment safety, and the reaction temperature is also too high. The main problem is that the prepared SiC nanowires are limited by the substrate and corundum sheets in the ceramic boat, resulting in a relatively limited range of aspect ratios. The average diameter of the nanowires does not exceed 100 nm, making it impossible to prepare SiC nanowires with different aspect ratios according to requirements. Chinese patent application number 201610028462.3 discloses a method for preparing bamboo-shaped SiC nanowires. The method is characterized by grinding and polishing the graphite substrate sample and washing it clean. Then, while keeping the furnace body leak-proof and maintaining the pressure inside the furnace at 1 kPa, a precursor and dilution gas are introduced into the furnace. After the reaction is maintained for a period of time, SiC nanowires are generated on the surface of the substrate. Although SiC nanowires were successfully fabricated on graphite substrates, the fabrication process is subject to numerous limiting factors. The sample surface requires polishing, and the pressure must be maintained at 1 kPa. The furnace pressure is too low after introducing the precursor, placing excessive demands on equipment pumping speed. Most importantly, the SiC nanowires are fabricated under a single deposition parameter, resulting in a very uniform aspect ratio with limited variation. Furthermore, the substrate is bound with carbon fiber bundles before deposition, making it unsuitable for large-sized graphite or other substrate types due to weight limitations. Additionally, the binding effect of the fiber bundles hinders the formation of SiC nanowires at the contact points between the fiber bundles and the graphite substrate, preventing the acquisition of uniform SiC nanowires across the entire substrate surface.

[0004] To date, SiC nanowires prepared in a single batch using existing CVD methods under the same parameters have drawbacks such as a small aspect ratio range, uneven SiC nanowire preparation on the substrate surface, and relatively uniform morphology. They are mostly used for preparing SiC nanowires on the surface of small substrate samples. There are no reports of using chemical vapor deposition to prepare SiC nanowires with different aspect ratios and morphologies in a single batch with high throughput in a short period of time and applying it to the uniform preparation of SiC nanowires on the surface of large-size substrate samples. Summary of the Invention

[0005] To address the shortcomings of current technologies, this invention provides an apparatus and method for high-throughput preparation of SiC nanowires. The SiC nanowires prepared by this method can be uniformly deposited on the substrate surface, achieving uniform and complete coverage of the substrate surface. This method can be applied to large-size substrate surfaces, improving the preparation efficiency of SiC nanowires on substrate surfaces. Importantly, this invention provides a high-throughput preparation method for SiC nanowires with different aspect ratios and morphologies in a single batch, and also provides a method for preparing high-purity SiC whiskers without metal residue.

[0006] On one hand, the present invention provides a deposition apparatus for high-throughput fabrication of SiC nanowires on a substrate surface, comprising: at least two or more graphite plates, wherein the graphite plates are provided with a plurality of through holes.

[0007] Support device for supporting and fixing graphite plates;

[0008] And a substrate support device disposed on the upper surface of a graphite plate for placing a substrate, or a substrate suspension device disposed on the lower surface of a graphite plate for suspending a substrate.

[0009] In this disclosure, given a constant flow rate of the precursor introduced into the furnace, the presence of multiple hollow graphite plates within the furnace leads to a continuous depletion of gas concentration as the precursor passes through them. This results in varying saturated vapor pressures of the precursor on the substrate surface after passing through different hollow graphite plates, consequently causing completely different morphologies and aspect ratios of the generated SiC nanowires. This achieves high-throughput preparation of SiC nanowires. Furthermore, the presence of the hollow graphite plates allows for the placement of substrate materials of different sizes. With the assistance of a graphite support device, complete diffusion of the gas flow across the substrate surface is achieved, resulting in uniform deposition of SiC nanowires on substrates of different sizes, further enabling high-throughput preparation of SiC nanowires.

[0010] Preferably, the cross-sectional shape of the graphite plate is circular or polygonal; the polygon is triangular, quadrilateral or hexagonal.

[0011] Preferably, the number of through holes is at least two, and they are evenly distributed on the cross-section of the graphite plate; the diameter of the through holes is 2mm to 100mm.

[0012] Preferably, the interface shape of the through hole is circular or polygonal, and the polygonal shape is triangular, quadrilateral or hexagonal.

[0013] Preferably, the support device is a support rod; the number of support rods is three or more; the bottom of the support device is provided with a base for fixing the deposition device for high-throughput SiC nanowire fabrication on the substrate surface, and the shape of the base can be circular or polygonal (e.g., triangular, quadrilateral or hexagonal).

[0014] Preferably, the number of graphite plates is at least two, and they are placed in parallel on the support device, with a distance of 2 cm or more between adjacent graphite plates.

[0015] Preferably, the substrate support device is a graphite support device; the graphite support device is a graphite strip with a rectangular cross-section, a graphite strip with a triangular cross-section, a graphite cylinder, or a graphite screw.

[0016] Preferably, the substrate suspension device comprises: carbon fiber, silicon carbide fiber, graphite fiber, or carbon rope.

[0017] On the other hand, the present invention provides a method for high-throughput fabrication of SiC nanowires on a substrate surface, comprising:

[0018] (1) The deposition apparatus for high-throughput SiC nanowire preparation on the surface of the above substrate is placed in a vertical reactor, and multiple substrates are placed on different graphite plates or different positions on the same graphite plate.

[0019] (2) CH3Cl3Si is used as the carbon source and silicon source, H2 is used as the carrier gas, and Ar or a mixture of Ar and H2 is used as the dilution gas. CH3Cl3Si is introduced into the reaction chamber of the furnace by bubbling. H2, CH3Cl3Si and dilution gas are mixed and transported to the reaction chamber of the vertical reactor through a 316L stainless steel pipeline. The deposition pressure of SiC nanowires is controlled to be 2 to 10 kPa and the deposition temperature is 1200 to 1350 °C, so as to achieve high-throughput preparation of SiC nanowires.

[0020] Preferably, the purity of CH3Cl3Si (trichloromethylsilane) is above 97%, and the purity of both hydrogen and argon is above 99.99%.

[0021] The molar ratio of hydrogen to trichloromethylsilane is 2 to 15, and the molar ratio of hydrogen to argon is 0.1 to 30.

[0022] Preferably, the substrate includes: a graphite substrate, a ceramic substrate, or a porous preform;

[0023] The graphite substrate includes graphite sheets, graphite plates, graphite rings, or graphite cylinders.

[0024] The ceramic substrate includes alumina ceramic sheets, silicon carbide ceramic sheets, or silicon nitride ceramic sheets.

[0025] The porous preform includes a carbon fiber preform or a silicon carbide fiber preform.

[0026] In another aspect, the present invention provides a SiC nanowire prepared according to the above method, wherein the aspect ratio of the SiC nanowire is in the range of 5 to 3000, and the length of the SiC nanowire is in the range of 50 nm to 3000 μm.

[0027] The beneficial effects of this invention are:

[0028] In this invention, by placing multiple hollow graphite plates inside a furnace, and then placing the substrate on the hollow graphite plates and supporting it with a graphite support device, the morphology and aspect ratio of the prepared SiC nanowires can be controlled in different ways. This achieves high-throughput batch preparation of SiC nanowires, which is impossible with conventional chemical vapor deposition methods, and enables the preparation of SiC nanowires with a wide range of aspect ratios. Placing the substrate on different graphite plates or different positions on the same graphite plate can achieve the preparation of nanowires with different SiC morphologies. Furthermore, this method has a simple process operation, is suitable for mass production, and improves the preparation efficiency of SiC nanowires.

[0029] Compared to traditional chemical vapor deposition (CVD), this method enables the fabrication of SiC nanowires on substrates of varying sizes, representing a technological breakthrough in the preparation of SiC nanowires on large-size substrates. The uniformity and efficiency of SiC nanowire deposition are significantly improved. Furthermore, this method allows for the simultaneous fabrication of different SiC morphologies in the same furnace, including SiC coatings, SiC whiskers, and SiC nanowires. By adjusting the spacing between hollow graphite plates, the deposition area of ​​the SiC nanowires within the furnace can be controlled precisely.

[0030] In this invention, SiC nanowires are not limited to being deposited on the surface of a substrate; they can also be deposited on other areas such as hollow graphite plates, graphite support devices, and bases at the bottom of the support devices.

[0031] In this invention, the substrate material does not require special treatment such as grinding and polishing before depositing nanowires; it only needs to be cleaned. The prepared SiC nanowires have high purity and good quality, with no metal residues or byproducts adhering around the SiC nanowires, and the nanowires have good bonding with the substrate.

[0032] In this invention, SiC nanowire deposition is applicable to a wide range of substrate materials, and no special treatment is required before substrate deposition, which can effectively improve the application range of SiC nanowires and has very significant application prospects. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the deposition apparatus used in the high-throughput SiC nanowire fabrication process of the present invention;

[0034] Figure 2This is a low-magnification scanning electron microscope image of the SiC whiskers deposited on the surface of the graphite substrate on the middle-layer hollow graphite plate in Example 1.

[0035] Figure 3 This is a low-magnification scanning electron microscope image of the SiC nanowires prepared on the surface of the graphite substrate on the middle-layer hollow graphite plate in Example 2.

[0036] Figure 4 The images are high-magnification scanning electron microscope images of SiC nanowires prepared on the substrate surface of the lower hollow graphite plate in Example 2. (a), (b) and (c) are nanowire morphology images of the substrate surface at different positions on the same hollow graphite plate. As can be seen from the images, there are huge differences in the aspect ratio and morphology of SiC nanowires prepared at different positions.

[0037] Figure 5 The image shows the energy dispersive spectroscopy (EDS) characterization of the SiC nanowires prepared on the substrate surface of the lower hollow plate in Example 2. As can be seen from the image, the prepared SiC nanowires are mainly composed of three elements: Si, C, and O. The oxygen may be oxygen adsorbed from the air. There are no other metal impurities. The prepared SiC nanowires have high purity.

[0038] Figure 6 This is a scanning electron microscope image of the SiC nanowires prepared on the graphite sheet on the middle-layer hollow graphite plate in Example 3;

[0039] Figure 7 The figures show the morphology of SiC nanowires prepared from graphite at different positions on the lower hollow graphite plate in Example 3. As can be seen from the figures, the aspect ratio and morphology of the SiC nanowires prepared at different positions vary greatly. Detailed Implementation

[0040] The present invention will be further illustrated by the following embodiments. It should be understood that the following embodiments are for illustrative purposes only and are not intended to limit the present invention.

[0041] In this disclosure, SiC nanowires are fabricated on the substrate surface in high throughput using low-pressure chemical vapor deposition (LPCVD) without the introduction of a catalyst. This method involves placing multiple perforated graphite plates within an LCVD furnace, separating the perforated plates and placing them in a constant-temperature zone within the furnace. The substrate is then placed on different perforated graphite plates and at different positions on the same perforated graphite plate. The equipment is heated to a high temperature under vacuum, and a precursor gas is introduced into the furnace. The gas flows through the perforated plates and diffuses to the substrate surface. Deposition is carried out at a constant temperature and pressure for a period of time, followed by cooling and removal, thus achieving high-throughput fabrication of SiC nanowires of different sizes and morphologies on the substrate surface.

[0042] The following exemplifies the basic process of a method for high-throughput fabrication of SiC nanowires.

[0043] Multiple hollow graphite plates with different aperture sizes and numbers are placed in the reaction chamber of the furnace. The hollow graphite plates are connected by graphite support screws. The graphite support device is placed on the hollow graphite plates and fixed. According to the nanowire preparation requirements, the substrate material is placed in different areas and positions in the furnace.

[0044] Using trichloromethylsilane (MTS) as the carbon and silicon source, H2 as the carrier gas, and a mixture of Ar and H2 as the dilution gas, CH3Cl3Si was introduced into the reaction chamber of the furnace by bubbling hydrogen. H2, Ar and MTS were mixed and then transported to the reaction chamber. After reacting at a constant temperature and pressure for a period of time, the SiC nanowires on the substrate surface were prepared.

[0045] More specifically, as an example, the specific process for preparing a SiBCN coating on a substrate surface according to the present invention is as follows.

[0046] Placement of hollow graphite plates: Place two or more hollow graphite plates with a diameter of 100-1500mm inside the furnace, and support them with graphite support rods. The hollow graphite plates should be kept horizontal and parallel, and each plate should have two or more through holes with a diameter of 5-100mm. The distance between adjacent hollow graphite plates should be at least 2cm (e.g., 4cm, 5cm, 6cm, 10cm, 20cm, 40cm, 80cm, etc.).

[0047] Substrate placement: Fix the graphite support device on the hollow porous plate, and then place the substrate to be deposited nanowires on the graphite support device after ultrasonic cleaning and drying. In order to ensure uniform preparation of nanowires on the substrate surface, the substrate and the graphite support device should maintain line contact or point contact as much as possible. The substrate can be placed upright or flat on the graphite support device.

[0048] The furnace is evacuated and heated. After the sample is loaded, the furnace is evacuated and pressurized 2-3 times to fully replace the air in the furnace. Then, the temperature is first increased to 1000℃ at a rate of 6-10℃ per minute, and then increased to a specific temperature at a rate of 1-5℃ per minute.

[0049] Preparation of SiC nanowires: MTS, H2, and Ar are introduced into the reaction chamber. The molar ratio of hydrogen to trichloromethylsilane is 2–15, and the molar ratio of hydrogen to argon is 0.1–30. The coating deposition temperature is 1200–1350℃, the deposition pressure is 2–10 kPa, and the coating deposition time is 0.5 hours or more. In addition to the materials mentioned above, silicon carbide nanowires can also be obtained on the surface of hollow graphite plates.

[0050] Compared with existing technologies, the SiC nanowires prepared in this invention can achieve uniform coverage and deposition on the substrate surface. It allows for the controllable preparation of SiC nanowires with different aspect ratios and morphologies on multiple substrate samples in a single batch, significantly improving the preparation efficiency of SiC nanowires. Furthermore, it provides a method for uniformly preparing SiC nanowires on large-size substrate surfaces. The prepared SiC nanowires are of high purity and quality, contain no metallic materials, and exhibit excellent bonding with the substrate. When used as a coating, they can provide excellent reinforcement and toughening effects. Moreover, no special surface treatment of the substrate is required before nanowire deposition, enabling industrial-scale production and demonstrating significant application potential.

[0051] The following examples further illustrate the present invention in detail. It should also be understood that the following examples are only for further explanation of the present invention and should not be construed as limiting the scope of protection of the present invention. Any non-essential improvements and adjustments made by those skilled in the art based on the above description of the present invention are within the scope of protection of the present invention. The specific process parameters, etc., in the following examples are merely examples within a suitable range; that is, those skilled in the art can make appropriate selections within the appropriate range based on the description herein, and are not intended to be limited to the specific values ​​in the examples below.

[0052] Example 1:

[0053] (1) Place a hollow graphite plate with a diameter of 300mm into the reaction chamber of the furnace. It is divided into three layers: upper, middle and lower (the distance between adjacent hollow graphite plates is 5cm). There are 20 evenly distributed round holes on the hollow graphite plate. The round holes are evenly distributed on the entire cross section of the graphite plate. Place the rectangular graphite support device on the graphite plate.

[0054] (2) Cut the required SiC nanowire graphite substrate into a disc with a diameter of 150 mm and a thickness of 8 mm, clean it with ultrasonication, and then bake it at 120°C for 5 h. After drying, place it on a rectangular graphite support device.

[0055] (3) After the sample is loaded, the furnace is evacuated and filled with argon gas three times to completely replace the air in the furnace. The vacuum level in the furnace is maintained in a vacuum state. Then, the temperature is increased to 1000°C at 8°C per minute, and then increased to 1230°C at 5°C per minute. After the temperature is reached, it is kept at the temperature for 1 hour.

[0056] (4) Introduce MTS, H2 and Ar into the reaction chamber. The molar ratio of hydrogen to MTS is 10, the molar ratio of hydrogen to argon is 10, the deposition temperature is 1230℃, the deposition pressure is 3Kpa, the deposition time is 1h, and the process gas is cut off after the process is completed and the temperature is allowed to drop naturally.

[0057] (5) After the above operation, no SiC nanowires were obtained on the surface of the upper graphite substrate, but a large number of brown SiC whiskers were obtained on the surface of the middle graphite substrate. The diameter was about 4.5 μm and the length was up to 200 μm. A small number of white SiC nanowires were obtained on the surface of the lower graphite substrate. The aspect ratio of the SiC nanowires obtained ranged from 10 to 2000.

[0058] Example 2:

[0059] (1) Place a hollow graphite plate with a diameter of 300mm into the reaction chamber of the furnace. It is divided into three layers: upper, middle and lower (the distance between adjacent hollow graphite plates is 15cm). There are 20 evenly distributed round holes on the hollow graphite plate. The round holes are evenly distributed on the entire cross section of the graphite plate. Place the rectangular graphite support device on the graphite plate.

[0060] (2) Cut the required SiC nanowire graphite substrate into 4mm×5mm×50mm size, ultrasonically clean it, and then bake it at 120℃ for 5h. After drying, place it on a rectangular graphite support device.

[0061] (3) After the sample is loaded, the furnace is evacuated and filled with argon gas three times to completely replace the air in the furnace. The vacuum level in the furnace is maintained in a vacuum state. Then, the temperature is increased to 1000°C at 8°C per minute, and then increased to 1270°C at 5°C per minute. After the temperature is reached, it is kept at the temperature for 1 hour.

[0062] (4) Introduce MTS, H2, and Ar into the reaction chamber. The molar ratio of hydrogen to MTS is 10, and the molar ratio of hydrogen to argon is 10. The deposition temperature is 1270℃, the deposition pressure is 4 kPa, and the deposition time is 2 h. After the process is completed, cut off the process gas and allow it to cool naturally.

[0063] (5) After the above operation, a small amount of brown SiC nanowires are obtained on the surface of the upper and middle graphite substrates. The aspect ratio of the SiC nanowires is 10 to 200. A small amount of white SiC nanowires are obtained on the surface of the lower graphite substrate. The aspect ratio of the SiC nanowires is 10 to 2800.

[0064] Example 3:

[0065] (1) Place a hollow graphite plate with a diameter of 300mm into the reaction chamber of the furnace. It is divided into three layers: upper, middle and lower (the distance between adjacent hollow graphite plates is 15cm). There are 20 evenly distributed round holes on the hollow graphite plate. The round holes are evenly distributed on the entire cross section of the graphite plate. Place the triangular graphite support device on the graphite plate.

[0066] (2) Cut the required SiC nanowire graphite substrate into a disc with a diameter of 180 mm and a thickness of 8 mm, clean it with ultrasonication, and then bake it at 120°C for 5 h. After drying, place it on a rectangular graphite support device.

[0067] (3) After the sample is loaded, the furnace is evacuated and filled with argon gas three times to completely replace the air in the furnace. The vacuum level in the furnace is maintained in a vacuum state. Then, the temperature is increased to 1000°C at 8°C per minute, and then increased to 1320°C at 5°C per minute. After the temperature is reached, it is kept at the temperature for 1 hour.

[0068] (4) Introduce MTS, H2 and Ar into the reaction chamber. The molar ratio of hydrogen to MTS is 10, the molar ratio of hydrogen to argon is 10, the deposition temperature is 1320℃, the deposition pressure is 6Kpa, the deposition time is 5h, and the process gas is cut off after the process is completed and the temperature is allowed to drop naturally.

[0069] (5) After the above operation, a large number of SiC nanowires are obtained on the surface of the upper, middle and lower graphite substrates. A large number of brown SiC nanowires are obtained on the surface of the upper and middle graphite substrates, with an aspect ratio of 5 to 100 and a diameter close to 1 μm. A large number of white SiC nanowires are obtained on the surface of the lower graphite substrate, with an aspect ratio of 20 to 1000.

[0070] In summary, the SiC nanowires prepared by this invention possess advantages over other methods, including faster deposition rates, higher purity, simpler preparation processes, a wider range of nanowire sizes (aspect ratio, etc.), more diverse nanowire morphologies, and controllable nanowire yield. The method of this invention can significantly improve the preparation efficiency of SiC nanowires; reduce the nanowire preparation cycle and raw material costs; achieve high-throughput preparation of multiple SiC nanowires of different sizes (aspect ratios) and morphologies in a single batch; and overcome the shortcomings of existing SiC nanowire preparation processes, such as complex processes, low purity, high energy consumption, and limited nanowire morphology.

Claims

1. A deposition apparatus for high-throughput fabrication of SiC nanowires on a substrate surface, characterized in that, include: At least two graphite plates, wherein the graphite plates are provided with multiple through holes; Support device for supporting and fixing graphite plates; And a substrate support device disposed on the upper surface of a graphite plate for placing a substrate; the substrate support device is a graphite support device; the graphite support device is a graphite strip with a triangular cross-section; The at least two graphite plates are placed parallel to each other on the support device, and the distance between adjacent graphite plates is more than 2 cm.

2. The deposition apparatus according to claim 1, characterized in that, The graphite plate has a circular or polygonal cross-sectional shape; the polygonal shape is a triangle, quadrilateral, or hexagon.

3. The deposition apparatus according to claim 1, characterized in that, The number of through holes is at least two, and the through holes are evenly distributed on the cross-section of the graphite plate; the diameter of the through holes is 2mm to 100mm.

4. The deposition apparatus according to claim 3, characterized in that, The interface shape of the through hole is circular or polygonal, and the polygonal shape is triangular, quadrilateral or hexagonal.

5. The deposition apparatus according to claim 1, characterized in that, The support device is a support rod; the number of support rods is three or more; the bottom of the support device is provided with a base for fixing the deposition device for high-throughput SiC nanowire fabrication on the substrate surface, and the base is circular or polygonal in shape.

6. A method for high-throughput fabrication of SiC nanowires on a substrate surface, characterized in that, include: (1) The deposition apparatus for high-throughput SiC nanowire preparation on the substrate surface according to any one of claims 1-5 is placed in a vertical reactor, and multiple substrates are placed on different graphite plates or at different positions on the same graphite plate. (2) CH3Cl3Si is used as the carbon source and silicon source, H2 is used as the carrier gas, and Ar or a mixture of Ar and H2 is used as the dilution gas. CH3Cl3Si is introduced into the reaction chamber of the furnace by bubbling. H2, CH3Cl3Si and dilution gas are mixed and transported to the reaction chamber of the vertical reactor through a 316L stainless steel pipeline. The deposition pressure of SiC nanowires is controlled to be 2 to 10 kPa and the deposition temperature is 1200 to 1350 °C, so as to achieve high-throughput preparation of SiC nanowires.

7. The method according to claim 6, characterized in that, The purity of CH3Cl3Si is above 97%, and the purity of H2 and Ar is above 99.99%. The molar ratio of H2 to CH3Cl3Si is 2 to 15, and the molar ratio of H2 to Ar is 0.1 to 30.

8. The method according to claim 6, characterized in that, The substrate includes: a graphite substrate, a ceramic substrate, or a porous preform; The graphite substrate includes graphite sheets, graphite plates, graphite rings, or graphite cylinders. The ceramic substrate includes alumina ceramic sheets, silicon carbide ceramic sheets, or silicon nitride ceramic sheets. The porous preform includes a carbon fiber preform or a silicon carbide fiber preform.

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