Method of regulating beam displacement and beam displacement device

Abstract

The application provides a beam displacement regulation method and a beam displacement device. The method is applied to the beam displacement device, the beam displacement device comprises a plurality of cell structures which are sequentially and spacedly distributed along the same direction, and the method comprises the following steps: obtaining structure data of the cell structure and a working frequency of the cell structure; determining a transmittance and a transmission phase corresponding to the cell structure based on the structure data and the working frequency; determining a correlation curve between the incident angle, the transmittance and the transmission phase based on each incident angle, each transmittance and each transmission phase; and determining a transverse displacement corresponding to a preset adjustment mode of the incident wave in the cell structure by setting the cell structure as a second type of boundary condition for finite element simulation calculation based on the correlation curve and the incident wave of a preset incident wavelength incident to the cell structure of the preset adjustment mode. The complexity and cost of the regulation method are reduced, the regulation efficiency of the beam displacement is improved, and the transverse displacement is increased.

Description

Technical Field

[0001] This application belongs to the field of metasurface technology, and in particular relates to a method for controlling beam displacement and a beam displacement device. Background Technology

[0002] When a beam of light is incident from an optically denser medium into an optically less dense medium and undergoes total internal reflection, the light propagates a distance along the interface before being reflected again. This beam deflection effect occurs at the interface between two different media, where the reflected beam exhibits a lateral displacement relative to the incident beam's geometrical and optical position. This displacement is called the Guth-Hanshin (GH) shift. The GH shift is generated because the incident light consists of a series of plane waves with different incident directions. These plane waves undergo different phase transitions during reflection, and the phase abrupt change resulting from the superposition of these reflected plane waves manifests spatially as the GH shift of the beam. Controllable GH shifts are significant in surface plasmon resonance imaging, biosensing, and the flexible manipulation and positioning of beams, and have been applied to the detection of displacement, refractive index, irregularities, surface roughness, and chemical sensors.

[0003] With the emergence of new materials such as chiral media, dielectric films, photonic crystals, and absorption media, there are more and more ways to control beams. However, constructing new beams or new optical structures leads to high system complexity, lack of portability, high cost, stringent equipment requirements, and difficulty in achieving integration. This results in high complexity and cost of control methods and stringent requirements for control devices.

[0004] Existing technologies suffer from problems such as high complexity and cost of control methods, as well as stringent requirements for control devices. Summary of the Invention

[0005] This application provides a beam shift control method and a beam shift device, which can solve the problems of high complexity, high cost, and stringent requirements for control methods and control devices.

[0006] In a first aspect, embodiments of this application provide a method for controlling beam displacement, applied to a beam displacement device, the beam displacement device comprising a plurality of cell structures spaced apart sequentially along the same direction, the control method comprising:

[0007] Obtain the structural data of the cell structure and the operating frequency of the cell structure;

[0008] Based on the structural data and the operating frequency, the transmittance and transmission phase corresponding to each incident angle are determined by incidenting the cell structure at multiple incident angles with a preset incident wavelength.

[0009] Based on each incident angle, each transmittance, and each transmission phase, a correlation curve is determined among the incident angle, transmittance, and transmission phase.

[0010] Based on the correlation curve, an incident wave of the preset incident wavelength is incident on the cell structure with the preset adjustment mode. Finite element simulation calculation is performed by setting the cell structure as the second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode.

[0011] In one embodiment, the cell structure includes a first elliptical structure and a second elliptical structure, the major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure, and the preset adjustment method includes a first preset adjustment method, which represents adjusting the rotation angle of the major axis of the second elliptical structure in the counterclockwise direction.

[0012] An incident wave of the preset incident wavelength is incident on the cell structure with a preset adjustment mode. Finite element simulation is performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode, including:

[0013] An incident wave of the preset incident wavelength is incident at a preset incident angle onto the cell structure of the first preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculations.

[0014] In one embodiment, the rotation angle includes a first rotation angle and a second rotation angle, and the lateral displacement includes a first lateral displacement and a second lateral displacement;

[0015] An incident wave of the preset incident wavelength is incident at a preset incident angle onto the cell structure of the first preset adjustment mode. Finite element simulation is performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode, including:

[0016] An incident wave with the preset incident wavelength is incident at the preset incident angle to the cell structure at the first rotation angle. The first lateral displacement of the incident wave within the cell structure corresponding to the first rotation angle is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculation.

[0017] An incident wave of the preset incident wavelength is incident at the preset incident angle to the cell structure at the second rotation angle. The second lateral displacement of the incident wave within the cell structure corresponding to the second rotation angle is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculation.

[0018] Wherein, the first rotation angle is smaller than the second rotation angle, and the first lateral displacement is greater than the second lateral displacement.

[0019] In one embodiment, the cell structure includes a first elliptical structure and a second elliptical structure, the major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure, and the preset adjustment method includes a second preset adjustment method, which represents adjusting the length of the minor axis of the second elliptical structure.

[0020] An incident wave of the preset incident wavelength is incident on the cell structure with a preset adjustment mode. Finite element simulation is performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode, including:

[0021] An incident wave of the preset incident wavelength is incident on the cell structure of the second preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculation.

[0022] In one embodiment, the preset incident angle includes a first preset incident angle and a second preset incident angle, the minor axis length of the second elliptical structure includes a first minor axis length and a second minor axis length, and the lateral displacement further includes a third lateral displacement and a fourth lateral displacement.

[0023] An incident wave of the preset incident wavelength is incident on the cell structure of the second preset adjustment mode. Finite element simulation is performed by setting the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode, including:

[0024] An incident wave of the preset incident wavelength is incident from the first preset incident angle onto the cell structure with the first minor axis length. The third lateral displacement of the incident wave within the cell structure corresponding to the first minor axis length is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculation.

[0025] An incident wave of the preset incident wavelength is incident from the second preset incident angle onto the cell structure with the second minor axis length. The fourth lateral displacement of the incident wave corresponding to the second minor axis length is determined by finite element simulation calculation of the cell structure as a second type of boundary condition.

[0026] Wherein, the first minor axis length is greater than the second minor axis length, the first preset incident angle is greater than the second preset incident angle, and the third lateral displacement is less than the fourth lateral displacement.

[0027] In one embodiment, the preset incident wavelength is a preset multiple of the length of the cell structure, the length of the cell structure is in the range of 1 mm to 50 cm, and the preset multiple is in the range of 0.5 to 3.

[0028] In one embodiment, the incident angle includes a working angle, which is the incident angle corresponding to a transmittance greater than or equal to 0.8 in the correlation curve.

[0029] In a second aspect, embodiments of this application provide a beam shifting device for implementing the method described in any of the first aspects, the beam shifting device comprising a plurality of cell structures spaced apart sequentially along the same direction;

[0030] The cell structure includes a first elliptical structure and a second elliptical structure. The direction of the major axis of the first elliptical structure is the same as the direction in which the cell structures are distributed at intervals. The major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure. The length of the first major axis of the first elliptical structure is greater than the length of the second major axis of the second elliptical structure.

[0031] The materials of the first elliptical structure and the second elliptical structure are both acoustic hard boundaries or ideal electrical conductors.

[0032] In one embodiment, the second elliptical structure is located on one side of the end of the major axis of the first elliptical structure; the spacing between the cell structures and the spacing between the first elliptical structure and the second elliptical structure are both air medium.

[0033] In one embodiment, the incident wave enters from the side of the first elliptical structure of the cell structure away from the second elliptical structure, and the outgoing wave exits from the side of the second elliptical structure of the cell structure away from the first elliptical structure.

[0034] It is understandable that the beneficial effects of the second aspect mentioned above can be found in the relevant descriptions in the first aspect above, and will not be repeated here.

[0035] The beneficial effects of the embodiments in this application compared with the prior art are:

[0036] This application provides a beam shift control method applied to a beam shifting device. The beam shifting device includes multiple cell structures spaced sequentially along the same direction. The control method acquires the structural data and operating frequency of the cell structures; based on the structural data and operating frequency, it determines the transmittance and transmission phase corresponding to each incident angle by incidenting a preset incident wavelength onto the cell structure at multiple incident angles; based on each incident angle, each transmittance, and each transmission phase, it determines the correlation curve between the incident angle, transmittance, and transmission phase; based on the correlation curve, it incident a preset incident wavelength onto a preset adjustment mode. The cellular structure is used to determine the lateral displacement of the incident wave within the cellular structure corresponding to the preset adjustment mode by setting the cellular structure as the second type of boundary condition and performing finite element simulation calculations. Compared with the existing technology, this method only requires obtaining the correlation curve between the incident angle, transmittance and transmission phase of the cellular structure. Then, the incident wave is incident on the cellular structure with the preset adjustment mode, and the lateral displacement corresponding to the preset adjustment mode is determined by setting the cellular structure as the second type of boundary condition and performing finite element simulation calculations. This reduces the complexity and cost of the control method, reduces the requirements of the control device, and improves the control efficiency of beam displacement. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This is a schematic flowchart of a beam displacement control method provided in an embodiment of this application;

[0039] Figure 2 This is a schematic diagram of the beam shifting device provided in the embodiments of this application;

[0040] Figure 3 This is a schematic diagram of the cell structure of the beam shifting device provided in the embodiments of this application;

[0041] Figure 4 This is a schematic diagram of the correlation curves between the incident angle, transmittance, and transmission phase provided in an embodiment of this application;

[0042] Figure 5 This is a schematic diagram of a cell structure of a second elliptical structure provided in an embodiment of this application, in which the rotation angles of the major axis of the elliptical structure are 0°, 45° and 90° respectively.

[0043] Figure 6 This is a schematic diagram of the correlation curves between the second elliptical structure provided in an embodiment of this application and the corresponding transmission phase when the rotation angles are 0°, 45° and 90° respectively;

[0044] Figure 7 This is a schematic diagram of the beam displacement of the normalized transmission field when the rotation angles of the second elliptical structure provided in an embodiment of this application are 0°, 45° and 90° respectively;

[0045] Figure 8 This is a schematic diagram of the beam displacement of the normalized transmission field when the rotation angle of the second elliptical structure provided in an embodiment of this application is 45°.

[0046] Figure 9 This is a schematic diagram of the beam displacement of the normalized transmission field when the rotation angle of the second elliptical structure provided in an embodiment of this application is 90°.

[0047] Figure 10 This is a schematic diagram of a cell structure of a second elliptical structure provided in an embodiment of this application, with normalized minor axis lengths of 1 / 7, 1 / 8, 1 / 9 and 1 / 10 respectively.

[0048] Figure 11 This is a schematic diagram of the correlation curves between the normalized minor axis lengths of the second elliptical structure provided in this application embodiment and the corresponding transmission phase when they are 1 / 7, 1 / 8, 1 / 9 and 1 / 10 respectively. Detailed Implementation

[0049] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0050] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0051] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0052] Furthermore, in the description of this application and the appended claims, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0053] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0054] Lateral beam shifting has significant potential applications in optical devices, such as optical information storage, optical switches, and sensors. Therefore, achieving enhanced beam shifting and further exploring the potential applications of Gus-Hansheim shift (GH shift) have been ongoing research directions. With the continuous emergence of various new materials, it is possible to achieve focusing, shifting, and diffraction effects through artificial microstructures.

[0055] With the emergence of new materials such as chiral media, dielectric films, photonic crystals, and absorption media, there are more and more ways to control beams. However, constructing new beams or new optical structures leads to high system complexity, lack of portability, high cost, stringent equipment requirements, and difficulty in achieving integration. This results in high complexity and cost of control methods and stringent requirements for control devices.

[0056] To address the aforementioned problems, this application provides a beam shift control method applied to a beam shifting device. The beam shifting device includes multiple cell structures spaced apart sequentially along the same direction. The control method acquires the structural data and operating frequency of the cell structures; based on the structural data and operating frequency, a preset incident wavelength is incident on the cell structure at multiple incident angles to determine the transmittance and transmission phase corresponding to each incident angle; based on each incident angle, each transmittance, and each transmission phase, a correlation curve is determined between the incident angle, transmittance, and transmission phase; based on the correlation curve, an incident wave of the preset incident wavelength is incident on the cell structure with a preset adjustment mode. The proposed method determines the lateral displacement of the incident wave within the cell structure corresponding to a preset adjustment mode by setting the cell structure as a second type of boundary condition and performing finite element simulation calculations. Compared to existing technologies, this method only requires obtaining the correlation curves between the incident angle, transmittance, and transmission phase of the cell structure. Then, by incidenting the incident wave onto the cell structure with the preset adjustment mode and performing finite element simulation calculations with the cell structure set as a second type of boundary condition, the lateral displacement corresponding to the preset adjustment mode can be determined. This reduces the complexity and cost of the control method, lowers the requirements for control devices, improves the control efficiency of beam displacement, and increases the lateral displacement of the beam.

[0057] The technical solution of this application will be illustrated below through specific embodiments.

[0058] Firstly, such as Figure 1 As shown, this embodiment provides a beam shift control method, applied to a beam shifting device. The control method includes:

[0059] S100, acquires the structural data of the cell structure and the operating frequency of the cell structure.

[0060] In one embodiment, such as Figure 2 , Figure 3 As shown, the beam shifting device includes multiple cell structures spaced apart sequentially along the same direction. The cell structures include a first elliptical structure and a second elliptical structure. The major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure. The structural data includes the length of the cell structure (also called the period length), the first major axis length a1 of the major axis of the first elliptical structure, the first minor axis length b1 of the minor axis of the first elliptical structure, the second major axis length a2 of the major axis of the second elliptical structure, the second minor axis length b2 of the minor axis of the second elliptical structure, the lateral distance dx between the center of the first elliptical structure and the center of the second elliptical structure, and the longitudinal distance dy between the center of the first elliptical structure and the center of the second elliptical structure. Based on the above structural data, it is easy to determine the transmittance, reflectance, transmission phase, and reflection phase of the cell structure.

[0061] In one embodiment, the operating frequency of the cell structure is the incident wavelength divided by the speed of light, the preset incident wavelength is a preset multiple of the length of the cell structure, the length of the cell structure ranges from 1 mm to 50 cm, and the preset multiple ranges from 0.5 to 3.

[0062] In one embodiment, the structural parameters of the cell structure are normalized as follows: the length of the first major axis a1 of the first elliptical structure is 1 / 4; the length of the first minor axis b1 of the first elliptical structure is 1 / 5; the length of the second major axis a2 of the second elliptical structure is 1 / 6; the length of the second minor axis b2 of the second elliptical structure is 1 / 7; the lateral distance dx between the centers of the first and second elliptical structures is 0.35; and the longitudinal distance dy between the centers of the first and second elliptical structures is 1.35. It should be noted that there are no restrictions on the specific values ​​and ratios of the major and minor axes of the first and second elliptical structures, the lateral distance between their centers, and the longitudinal distance between their centers; these values ​​are set according to the scene requirements and beam displacement requirements. For example, the ratio of the length of the first major axis of the first elliptical structure to the length of the second major axis of the second elliptical structure can range from 1 to 2.

[0063] S200, based on structural data and operating frequency, determines the transmittance and transmission phase corresponding to each incident angle by incidenting the cell structure at multiple incident angles with a preset incident wavelength.

[0064] In one embodiment, after determining the structural data and operating frequency, the cell structure is incident at multiple incident angles with a preset incident wavelength. The transmittance and transmission phase of the cell structure at each incident angle are determined by solving the incident wave under different incident angle conditions.

[0065] S300 determines the correlation curves between the incident angle, transmittance, and transmission phase based on each incident angle, each transmittance, and each transmission phase.

[0066] In one embodiment, such as Figure 4 As shown, correlation curves were plotted based on various incident angles, transmittance, and transmission phases. These curves revealed that within the working angle range of the cell structure, the transmittance is close to 1, and the transmission phase exhibits a significant phase gradient. Therefore, a substantial change in the transmission phase can be achieved by finely adjusting the transmittance within the working angle range of the cell structure. For example, the incident angle includes the working angle, which is the incident angle corresponding to a transmittance greater than or equal to 0.8 in the correlation curve.

[0067] S400, based on the correlation curve, uses an incident wave of a preset incident wavelength to be incident on a cell structure with a preset adjustment mode. By setting the cell structure as a second type of boundary condition, finite element simulation calculation is performed to determine the transverse displacement of the incident wave within the cell structure corresponding to the preset adjustment mode.

[0068] In one embodiment, based on the correlation curve, an incident wave of a preset incident wavelength is incident on a cell structure with a preset adjustment mode to obtain the transmission phase corresponding to the preset adjustment mode. Finite element simulation is then performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode. This allows for beam displacement control according to scenario requirements. Since only the correlation curve between the incident angle, transmittance, and transmission phase of the cell structure needs to be obtained, and the lateral displacement corresponding to the preset adjustment mode can be determined by incident a wave onto the cell structure with the preset adjustment mode and performing finite element simulation using the cell structure as a second type of boundary condition, the complexity and cost of the control method are reduced, the requirements for control devices are lowered, and the efficiency of beam displacement control is improved. The second type of boundary condition is also called the Neumann boundary condition.

[0069] In one embodiment, the preset adjustment method includes a first preset adjustment method, which represents adjusting the rotation angle of the major axis of the second elliptical structure in the counterclockwise direction, thereby changing the transmittance of the cell structure by rotating the major axis of the second elliptical structure; for example, as... Figure 5 As shown, the rotation angles of the major axis of the second elliptical structure from left to right are 0°, 45° and 90° respectively.

[0070] In one embodiment, an incident wave of a preset incident wavelength is incident on a cell structure with a preset adjustment mode. The lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode is determined by finite element simulation calculation using the cell structure as a second type of boundary condition. This includes: an incident wave of a preset incident wavelength is incident on a cell structure with a preset incident angle at a preset incident angle. The lateral displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode is determined by finite element simulation calculation using the cell structure as a second type of boundary condition. In scenarios where it is inconvenient to change the size of the second elliptical structure, the beam displacement is controlled by changing the rotation angle of the major axis of the second elliptical structure in the counterclockwise direction according to the scenario requirements.

[0071] In one embodiment, the rotation angle includes a first rotation angle, a second rotation angle, and a third rotation angle, and the lateral displacement includes a first lateral displacement, a second lateral displacement, and a fifth lateral displacement. Further, the first rotation angle, the second rotation angle, and the third rotation angle are 0°, 45°, and 90°, respectively. The first lateral displacement is the lateral displacement corresponding to 0°, the second lateral displacement is the lateral displacement corresponding to 45°, and the fifth lateral displacement is the lateral displacement corresponding to 90°. It should be noted that in this embodiment, the specific value of the rotation angle is not limited. The rotation angle is set according to the requirements of the scene and the beam displacement. For example, the rotation angle can also be 30°, 60°, etc.

[0072] In one embodiment, an incident wave of a preset incident wavelength is incident on a cell structure with a first preset adjustment mode at a preset incident angle. Finite element simulation is performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode. This includes: an incident wave of a preset incident wavelength is incident on a cell structure with a first rotation angle at a preset incident angle; finite element simulation is performed using the cell structure as a second type of boundary condition to determine the first lateral displacement of the incident wave within the cell structure corresponding to the first rotation angle; and an incident wave of a preset incident wavelength is incident on a cell structure with a second rotation angle at a preset incident angle; finite element simulation is performed using the cell structure as a second type of boundary condition to determine the second lateral displacement of the incident wave within the cell structure corresponding to the second rotation angle. Wherein, the first rotation angle is less than the second rotation angle, and the first lateral displacement is greater than the second lateral displacement.

[0073] In one specific embodiment, the preset incident angle ranges from 1° to 6°, and is further preset to 4.8°. An incident wave with a normalized operating frequency of 0.90062 is incident at an incident angle of 4.8° onto a cell structure with a first rotation angle of 0°. The first lateral displacement of the incident wave within the cell structure corresponding to the first rotation angle of 0° is calculated using finite element simulation with the cell structure set as a second type of boundary condition; the first lateral displacement is 24 wavelengths. Similarly, an incident wave with a normalized operating frequency of 0.90062 is incident at an incident angle of 4.8° onto a cell structure with a second rotation angle of 45°. The first lateral displacement of the incident wave within the cell structure corresponding to the second rotation angle of 45° is calculated as follows: The second lateral displacement corresponding to 5° is calculated using finite element analysis (FEM) with the cell structure set to the second type of boundary conditions. This second lateral displacement is 20 wavelengths. An incident wave with a normalized operating frequency of 0.90062 is incident at an angle of 4.8° onto a cell structure with a third rotation angle of 90°. The fifth lateral displacement occurring within the cell structure, corresponding to the third rotation angle of 90°, is calculated using finite element analysis (FEM) with the cell structure set to the second type of boundary conditions. This fifth lateral displacement is 8 wavelengths. Therefore, with a fixed incident angle and frequency, the beam displacement can be controlled by adjusting the counterclockwise rotation angle of the major axis of the second elliptical structure. Figure 6 , Figure 7 , Figure 8 , Figure 9 As shown, Figure 6 This is a schematic diagram showing the correlation curves between the second elliptical structure (also known as the small ellipse) and the corresponding transmission phase when the rotation angles are 0°, 45°, and 90°. Figure 7 This is a schematic diagram showing the beam displacement of the normalized transmission field when the rotation angle of the second elliptical structure is 0°. Figure 8 This is a schematic diagram showing the beam displacement of the normalized transmission field when the rotation angle of the second elliptical structure is 45°. Figure 9 This is a schematic diagram showing the beam displacement of the normalized transmission field when the second elliptical structure is rotated by 90°. Figure 7 , Figure 8 , Figure 9 The horizontal axis represents the position coordinate divided by the incident wavelength, and the vertical axis represents the normalized transmitted field strength amplitude.

[0074] In one embodiment, the preset adjustment method includes a second preset adjustment method, which represents adjusting the minor axis length of the second elliptical structure to change the transmittance of the cell structure; for example, as... Figure 10 As shown, the normalized minor axis lengths of the second elliptical structure are 1 / 7, 1 / 8, 1 / 9 and 1 / 10 from left to right.

[0075] In one embodiment, an incident wave of a preset incident wavelength is incident on a cell structure with a preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the preset adjustment mode is determined by finite element simulation calculation using the cell structure as a second type of boundary condition. This includes: an incident wave of a preset incident wavelength is incident on a cell structure with a second preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode is determined by finite element simulation calculation using the cell structure as a second type of boundary condition. In scenarios where it is inconvenient to change the rotation angle of the second ellipse, the beam displacement is controlled by changing the minor axis length of the second ellipse structure according to the scenario requirements.

[0076] In one embodiment, the preset incident angles include a first preset incident angle, a second preset incident angle, a third preset incident angle, and a fourth preset incident angle; the minor axis length of the second elliptical structure includes a first minor axis length, a second minor axis length, a third minor axis length, and a fourth minor axis length; and the lateral displacements include a third lateral displacement, a fourth lateral displacement, a sixth lateral displacement, and a seventh lateral displacement. Further, the first preset incident angle, the second preset incident angle, the third preset incident angle, and the fourth preset incident angle are 4°, 2.8°, 2.3°, and 1.7°, respectively, and the normalized first minor axis length, second minor axis length, third minor axis length, and fourth minor axis length are 1 / 7, 1 / 8, 1 / 9, and 1 / 10, respectively. The third lateral displacement corresponds to the first preset incident angle of 4° and 1 / 7 of the normalized first minor axis length; the fourth lateral displacement corresponds to the first preset incident angle of 2.8° and 1 / 8 of the normalized first minor axis length; the sixth lateral displacement corresponds to the first preset incident angle of 2.3° and 1 / 9 of the normalized first minor axis length; and the seventh lateral displacement corresponds to the first preset incident angle of 1.7° and 1 / 10 of the normalized first minor axis length. It should be noted that in this embodiment, the specific values ​​of the preset incident angle and the minor axis length of the second elliptical structure are not limited. The preset incident angle and the minor axis length of the second elliptical structure are set according to the scene requirements and beam displacement requirements. For example, the normalized minor axis length of the second elliptical structure can also be 1 / 4, 1 / 5, etc.

[0077] In one embodiment, an incident wave of a preset incident wavelength is incident on a cell structure with a second preset adjustment mode. Finite element simulation is performed using the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode. This includes: an incident wave of a preset incident wavelength is incident from a first preset incident angle onto a cell structure with a first minor axis length; finite element simulation is performed using the cell structure as a second type of boundary condition to determine the third lateral displacement of the incident wave within the cell structure corresponding to the first minor axis length; an incident wave of a preset incident wavelength is incident from a second preset incident angle onto a cell structure with a second minor axis length; finite element simulation is performed using the cell structure as a second type of boundary condition to determine the fourth lateral displacement of the incident wave within the cell structure corresponding to the second minor axis length; wherein the first minor axis length is greater than the second minor axis length, the first preset incident angle is greater than the second preset incident angle, and the third lateral displacement is less than the fourth lateral displacement.

[0078] In one specific embodiment, an incident wave with a normalized operating frequency of 0.9173 is incident at an incident angle of 4° onto a cell structure with a first minor axis length of 1 / 7. The third lateral displacement of the incident wave within the cell structure, corresponding to 1 / 7 of the first minor axis length, is calculated as 22 wavelengths using finite element simulation with the cell structure set as a second type of boundary condition. Similarly, an incident wave with a normalized operating frequency of 0.9173 is incident at an incident angle of 2.8° onto a cell structure with a second minor axis length of 1 / 8. The fourth lateral displacement of the incident wave within the cell structure, corresponding to 1 / 8 of the second minor axis length, is calculated as 28 wavelengths using finite element simulation with the cell structure set as a second type of boundary condition. The third lateral displacement is calculated as 22 wavelengths using finite element simulation with the cell structure set as a second type of boundary condition. An incident wave at an incident angle of 3° is incident on a cell structure whose third minor axis is 1 / 9 of its length. The sixth lateral displacement, corresponding to 1 / 9 of the third minor axis, occurs within the cell structure. Finite element simulation using the cell structure as a second type of boundary condition yields a sixth lateral displacement of 30 wavelengths. Similarly, an incident wave at a normalized operating frequency of 0.9173 is incident on a cell structure whose fourth minor axis is 1 / 10 of its length at an incident angle of 1.7°. The seventh lateral displacement, corresponding to 1 / 10 of the fourth minor axis, occurs within the cell structure. Finite element simulation using the cell structure as a second type of boundary condition yields a seventh lateral displacement of 32 wavelengths. Thus, with a fixed incident frequency, the magnitude of the beam displacement can be controlled by adjusting the minor axis length of the second elliptical structure, thereby increasing the lateral displacement of the beam. Figure 11 As shown, Figure 11 This is a schematic diagram showing the correlation curves between the normalized minor axis lengths of the second elliptical structure and the corresponding transmission phases when they are 1 / 7, 1 / 8, 1 / 9, and 1 / 10.

[0079] In one embodiment, the beam displacement calculation formula for the case of infinitely wide plane wave incidence is:

[0080]

[0081] Among them, L shift This is a lateral displacement; For transmission phase or reflection phase; k x For wave number.

[0082] In another embodiment, the beam displacement control method can also control the displacement of the acoustic wave and the transverse magnetic wave.

[0083] It should be understood that the sequence number of each step in the above embodiments does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0084] The beneficial effects of the embodiments in this application compared with the prior art are:

[0085] This application provides a beam shift control method applied to a beam shifting device. The beam shifting device includes multiple cell structures spaced sequentially along the same direction. The control method acquires the structural data and operating frequency of the cell structures; determines the transmittance and transmission phase corresponding to the cell structure based on the structural data and operating frequency; determines the correlation curve between the incident angle, transmittance, and transmission phase based on each incident angle, each transmittance, and each transmission phase; and, based on the correlation curve, incident a preset incident wavelength onto the cell structure with a preset adjustment mode, by setting the cell structure as the first... Using finite element simulation calculations with two types of boundary conditions to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode, compared to existing technologies, this method only requires obtaining the correlation curves between the incident angle, transmittance, and transmission phase of the cell structure. Then, by incidenting the incident wave onto the cell structure with the preset adjustment mode and setting the cell structure as the second type of boundary condition for finite element simulation calculations to determine the lateral displacement corresponding to the preset adjustment mode, the complexity and cost of the control method are reduced, the requirements for control devices are reduced, the control efficiency of beam displacement is improved, and the lateral displacement of the beam is increased.

[0086] Secondly, such as Figure 2 , Figure 3As shown, this embodiment provides a beam shifting device for implementing any of the methods in the first aspect. The beam shifting device includes multiple cell structures that are sequentially spaced along the same direction. Each cell structure includes a first elliptical structure and a second elliptical structure. The direction of the major axis of the first elliptical structure is the same as the direction in which the cell structures are sequentially spaced. The major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure. The length of the first major axis of the first elliptical structure is greater than the length of the second major axis of the second elliptical structure. Both the first and second elliptical structures are made of acoustically hard boundaries or ideal electrical conductors. Since only the second elliptical structure needs to be adjusted, and then an incident wave is incident on the cell structure with a preset adjustment mode, the lateral displacement corresponding to the preset adjustment mode can be determined. This reduces the complexity and cost of the beam control device and improves the beam shifting control efficiency.

[0087] In one embodiment, the second elliptical structure is located on one side of the end of the major axis of the first elliptical structure; the spacing between the cell structures and the spacing between the first and second elliptical structures are all in air medium, which reduces the requirements of the beam control device, further reduces the complexity and cost of the beam control device, and improves the beam displacement control efficiency.

[0088] In one embodiment, Figure 2 This is a top view of a beam shifting device. The beam shifting device can be placed on one side of any two-dimensional surface. The bottom of the first elliptical structure and the second elliptical structure are both located on one side of the two-dimensional surface. The incident wave enters from the side of the first elliptical structure of the cell structure that is away from the second elliptical structure, and the outgoing wave exits from the side of the second elliptical structure of the cell structure that is away from the first elliptical structure.

[0089] It is understandable that the beneficial effects of the second aspect mentioned above can be found in the relevant descriptions in the first aspect above, and will not be repeated here.

[0090] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0091] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0092] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0093] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A method for controlling beam displacement, applied to a beam displacement device, the beam displacement device comprising a plurality of cell structures spaced apart sequentially along the same direction, characterized in that, The method includes: Obtain the structural data of the cell structure and the operating frequency of the cell structure; Based on the structural data and the operating frequency, the transmittance and transmission phase corresponding to each incident angle are determined by incidenting the cell structure at multiple incident angles with a preset incident wavelength. Based on each incident angle, each transmittance, and each transmission phase, a correlation curve is determined among the incident angle, transmittance, and transmission phase. Based on the correlation curve, an incident wave with a preset incident wavelength is incident on the cell structure with a preset adjustment mode. The transverse displacement of the incident wave in the cell structure corresponding to the preset adjustment mode is determined by setting the cell structure as a second type of boundary condition and performing finite element simulation calculation. The cell structure includes a first elliptical structure and a second elliptical structure, the major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure, and the preset adjustment method includes a first preset adjustment method, which represents adjusting the rotation angle of the major axis of the second elliptical structure in the counterclockwise direction. An incident wave of a preset incident wavelength is incident on a cell structure with a preset adjustment mode. Finite element simulation is performed by setting the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode, including: An incident wave of the preset incident wavelength is incident at a preset incident angle onto the cell structure of the first preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode is determined by setting the cell structure as the second type of boundary condition and performing finite element simulation calculation. The rotation angle includes a first rotation angle and a second rotation angle, and the lateral displacement includes a first lateral displacement and a second lateral displacement; An incident wave of the preset incident wavelength is incident at a preset incident angle onto the cell structure of the first preset adjustment mode. Finite element simulation is performed by setting the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the first preset adjustment mode, including: An incident wave with the preset incident wavelength is incident at the preset incident angle to the cell structure at the first rotation angle. The first lateral displacement of the incident wave within the cell structure corresponding to the first rotation angle is determined by setting the cell structure as the second type of boundary condition and performing finite element simulation calculation. An incident wave of the preset incident wavelength is incident at the preset incident angle to the cell structure at the second rotation angle. The second lateral displacement of the incident wave within the cell structure corresponding to the second rotation angle is determined by setting the cell structure as the second type of boundary condition and performing finite element simulation calculation. Wherein, the first rotation angle is smaller than the second rotation angle, and the first lateral displacement is greater than the second lateral displacement.

2. The method as described in claim 1, characterized in that, The cell structure includes a first elliptical structure and a second elliptical structure, the major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure, and the preset adjustment method includes a second preset adjustment method, which represents adjusting the length of the minor axis of the second elliptical structure. An incident wave of a preset incident wavelength is incident on a cell structure with a preset adjustment mode. Finite element simulation is performed by setting the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the preset adjustment mode, including: An incident wave of the preset incident wavelength is incident on the cell structure of the second preset adjustment mode. The transverse displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode is determined by setting the cell structure as the second type of boundary condition and performing finite element simulation calculation.

3. The method as described in claim 2, characterized in that, The preset incident angle includes a first preset incident angle and a second preset incident angle; the minor axis length of the second elliptical structure includes a first minor axis length and a second minor axis length; and the lateral displacement also includes a third lateral displacement and a fourth lateral displacement. An incident wave of the preset incident wavelength is incident on the cell structure of the second preset adjustment mode. Finite element simulation is performed by setting the cell structure as a second type of boundary condition to determine the lateral displacement of the incident wave within the cell structure corresponding to the second preset adjustment mode, including: An incident wave of the preset incident wavelength is incident from the first preset incident angle onto the cell structure with the first minor axis length. The third lateral displacement of the incident wave within the cell structure corresponding to the first minor axis length is determined by setting the cell structure as the second type of boundary condition and performing finite element simulation calculation. An incident wave of the preset incident wavelength is incident from the second preset incident angle onto the cell structure with the second minor axis length. The fourth lateral displacement of the incident wave corresponding to the second minor axis length is determined by finite element simulation calculation of the cell structure as the second type of boundary condition. Wherein, the first minor axis length is greater than the second minor axis length, the first preset incident angle is greater than the second preset incident angle, and the third lateral displacement is less than the fourth lateral displacement.

4. The method as described in claim 1, characterized in that, The preset incident wavelength is a preset multiple of the length of the cell structure, the length of the cell structure is in the range of 1 mm to 50 cm, and the preset multiple is in the range of 0.5 to 3.

5. The method as described in claim 1, characterized in that, The incident angle includes the working angle, which is the incident angle corresponding to a transmittance greater than or equal to 0.8 in the correlation curve.

6. A beam shifting device for implementing the method of any one of claims 1 to 5, characterized in that, The beam shifting device comprises multiple cell structures that are spaced apart sequentially along the same direction; The cell structure includes a first elliptical structure and a second elliptical structure. The direction of the major axis of the first elliptical structure is the same as the direction in which the cell structures are distributed at intervals. The major axis of the second elliptical structure is perpendicular to the major axis of the first elliptical structure. The length of the first major axis of the first elliptical structure is greater than the length of the second major axis of the second elliptical structure. The materials of the first elliptical structure and the second elliptical structure are both acoustic hard boundaries or ideal electrical conductors.

7. The device as claimed in claim 6, characterized in that, The second elliptical structure is located on one side of the end of the major axis of the first elliptical structure; The intervals between the cell structures and the intervals between the first elliptical structure and the second elliptical structure are all in the air medium.

8. The device as claimed in claim 6, characterized in that, The incident wave enters from the side of the first elliptical structure of the cell structure away from the second elliptical structure, and the outgoing wave exits from the side of the second elliptical structure of the cell structure away from the first elliptical structure.

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