Preparation method of SiC / AlFeCrCoNi high-entropy alloy composite material and product thereof

Abstract

The application provides a preparation method of SiC / AlFeCrCoNi high-entropy alloy composite material and a product thereof, and belongs to the technical field of alloys.The preparation method comprises the following steps: 1) mixing SiC plated with copper with AlFeCrCoNi high-entropy alloy powder, ball milling the mixture to obtain a ball-milled material; and 2) performing spark plasma sintering on the ball-milled material to obtain the high-entropy alloy composite material.The SiC / AlFeCrCoNi high-entropy alloy composite material prepared by the method has high tensile strength and good elongation.

Description

Technical Field

[0001] This invention belongs to the field of alloy technology, and particularly relates to a method for preparing SiC / AlFeCrCoNi high-entropy alloy composite material and the resulting product. Background Technology

[0002] High-entropy alloys possess many superior properties not found in traditional alloys, such as high strength / hardness and work hardening, high-temperature resistance to oxidation and softening, and excellent wear and corrosion resistance. Their comprehensive mechanical properties significantly surpass those of traditional metallic materials, leading to a wide range of applications. However, when high-entropy alloys are used as structural components, they operate under extremely complex and demanding conditions, placing exceptionally high requirements on the material's strength and toughness. Most high-entropy alloys, however, do not exhibit outstanding toughness and plasticity. Improving the plasticity and toughness of high-entropy alloys can be achieved through work hardening, heat treatment, and the addition of a second phase to prepare composite materials.

[0003] AlFeCrCoNi high-entropy alloys exhibit high strength / hardness and work hardening properties, high-temperature resistance to oxidation and softening, and good wear and corrosion resistance, with comprehensive mechanical properties significantly exceeding those of traditional metallic materials. SiC ceramics possess numerous advantages such as high strength, high hardness, good thermal stability, and low density, making them an ideal second-phase material. However, problems such as poor wettability, mismatched thermal expansion coefficients, and atomic diffusion often exist between SiC particles and AlFeCrCoNi high-entropy alloys. Furthermore, the interfacial reaction problem of SiC particle-reinforced metal matrix composites has long been a bottleneck issue for researchers. Therefore, improving the interfacial bonding strength between SiC ceramics and high-entropy alloys is particularly crucial. Summary of the Invention

[0004] In view of this, the present invention provides a method for preparing SiC / AlFeCrCoNi high-entropy alloy composite material and the product therefrom. The SiC / AlFeCrCoNi high-entropy alloy composite material prepared by the present invention has high tensile strength and good elongation.

[0005] This invention provides a method for preparing SiC / AlFeCrCoNi high-entropy alloy composite material, comprising the following steps:

[0006] 1) Mix copper-plated SiC with AlFeCrCoNi high-entropy alloy powder, and ball mill the mixture to obtain ball-milled material;

[0007] 2) The ball-milled material is subjected to spark plasma sintering to obtain a high-entropy alloy composite material.

[0008] Preferably, the method for preparing SiC with copper plating on its surface in step 1) includes the following steps:

[0009] a. Mix and stir nano-SiC particles with an acidic SnCl2 solution, wash with water until neutral, to obtain sensitized SiC;

[0010] b. The sensitized SiC is mixed with an activation solution containing silver ions, activated, washed with water until neutral, and dried to obtain activated SiC;

[0011] c. The activated SiC is mixed with a copper plating solution to perform copper plating, resulting in SiC with copper plating on its surface.

[0012] Preferably, in step a, the nano-SiC particles are roughened before being mixed with the SnCl2 acid solution; the roughening process is as follows: the nano-SiC particles are acid-washed, left to stand, and washed with water.

[0013] Preferably, the pickling solution is a mixture of hydrofluoric acid solution and nitric acid solution.

[0014] Preferably, the mass concentration of SnCl2 in the acidic solution of SnCl2 in step a is 7% to 10%.

[0015] Preferably, the preparation method of the copper plating solution in step c includes the following steps:

[0016] Copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water are mixed and heated at 55–65°C until dissolved to obtain a copper sulfate solution; the mass ratio of copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water is 3.5:5:3.75:100.

[0017] Formaldehyde, methanol, and water were added sequentially to the obtained copper sulfate solution to obtain a copper plating solution; the mass-volume ratio of the copper sulfate pentahydrate, formaldehyde, and methanol was 3.5 g: 6 mL: 4 mL.

[0018] Preferably, the copper plating solution is stirred during step c, and the pH value of the copper plating solution is maintained at 12-13.

[0019] Preferably, in step 1), the mass ratio of the copper-plated SiC to the AlFeCrCoNi high-entropy alloy powder is 1:14 to 16.

[0020] Preferably, in step 2), the pressure during discharge plasma sintering is 20-23 MPa, the pulse current is 5000-8000 A, and the temperature is held at 950°C for 15 min.

[0021] The present invention also provides a SiC / AlFeCrCoNi high-entropy alloy composite material prepared by any of the above methods, wherein the tensile strength of the composite material is ≥490.5MPa and the elongation is ≥4.27%.

[0022] Compared with the prior art, the advantages and positive effects of the present invention are as follows:

[0023] 1) The method for preparing SiC / AlFeCrCoNi high-entropy alloy composite material provided by this invention improves the interfacial bonding strength and interfacial mismatch between SiC and the high-entropy alloy by introducing a copper layer on the surface of SiC particles; ball milling is used to achieve more uniform alloying, improving the mechanical properties and corrosion resistance of the material; finally, spark plasma sintering is used to obtain the SiC / AlFeCrCoNi high-entropy alloy composite material. By combining the strong and tough SiC phase onto AlFeCrCoNi, the toughness of the high-entropy alloy is improved, resulting in high tensile strength and good elongation of the high-entropy alloy composite material. Under the same molding conditions, the tensile strength is increased by approximately 1.21 times and the elongation is increased by approximately 53% compared to the pure high-entropy alloy.

[0024] 2) Furthermore, SiC particles are a ceramic material that does not have electrical conductivity or catalytic activity. This application uses roughening, sensitization and activation treatments to make SiC catalytically active, enabling it to spontaneously complete the reaction, reduce copper ions, and attach a copper layer to the surface of the SiC particles. Attached Figure Description

[0025] Figure 1 The results of HEA energy dispersive spectroscopy (EDS) scans of the AlFeCrCoNi composite material are shown below; Figure 1 In the diagram, a represents the energy spectrum scan position of HEA, b represents the distribution of Al atoms, c represents the distribution of Fe atoms, d represents the distribution of Cr atoms, e represents the distribution of Co atoms, and f represents the distribution of Ni atoms. Detailed Implementation

[0026] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] This invention provides a method for preparing SiC / AlFeCrCoNi high-entropy alloy composite material, comprising the following steps:

[0028] 1) Mix copper-plated SiC with AlFeCrCoNi high-entropy alloy powder, and ball mill the mixture to obtain ball-milled material;

[0029] 2) The ball-milled material is subjected to spark plasma sintering to obtain a high-entropy alloy composite material.

[0030] This invention involves mixing copper-plated SiC with AlFeCrCoNi high-entropy alloy powder, and then ball-milling the mixture to obtain ball-milled material. In this invention, the preferred mass ratio of copper-plated SiC to AlFeCrCoNi high-entropy alloy powder is 1:14–16, more preferably 1:15. The preferred ball-milling speed is 250–350 r / min, more preferably 300 r / min; the preferred milling time is 200–250 min, more preferably 240 min. In this invention, ball milling can uniformly mix different metal powders and grind them into fine particles of the desired size, thereby achieving more uniform alloying and improving the mechanical properties and corrosion resistance of the material.

[0031] This invention does not specifically limit the AlFeCrCoNi high-entropy alloy used; any commercially available product in the art can be employed. The high-entropy alloy used in this embodiment was purchased from Beijing Boyanuo New Materials Technology Co., Ltd., wherein the mass ratio of Al:Fe:Cr:Co:Ni is 1:1:1:1:1. The HEA energy dispersive spectroscopy (EDS) results of this alloy are as follows: Figure 1 As shown, it can be seen that the proportions of each element are close, and they are evenly distributed in the matrix material with equal atomic ratios.

[0032] In this invention, the method for preparing the copper-plated SiC preferably includes the following steps:

[0033] a. Mix and stir nano-SiC particles with an acidic SnCl2 solution, wash with water until neutral, to obtain sensitized SiC;

[0034] b. The sensitized SiC is mixed with an activation solution containing silver ions, activated, washed with water until neutral, and dried to obtain activated SiC;

[0035] c. The activated SiC is mixed with a copper plating solution to perform copper plating, resulting in SiC with copper plating on its surface.

[0036] In this invention, nano-SiC particles are preferably mixed and stirred with an acidic solution of SnCl2, and then washed with water until neutral to obtain sensitized SiC. In this invention, to facilitate the processing of Sn... 2+ Before the nano-SiC particles are mixed with the SnCl2 acid solution, they are preferably roughened. In this invention, the roughening process is preferably performed by acid washing, settling, and water washing of the nano-SiC particles. In this invention, the acid washing solution is a mixture of hydrofluoric acid and nitric acid solutions. In this invention, the acid washing time is preferably 3.5–4.5 hours. To prevent the SiC powder from settling after roughening and to improve the acid washing effect, stirring is preferably performed during the acid washing process.

[0037] In this invention, the mass concentration of SnCl2 in the acid solution is preferably 7% to 10%, more preferably 8%. In this invention, the acid used in the SnCl2 acid solution is preferably hydrochloric acid. In this invention, the mixing and stirring time is preferably 8 to 12 minutes. In this invention, the nano-SiC particles and Sn... 2+ The preferred molar ratio is 1 to 2.5:1, more preferably 2.37:1. In this invention, through sensitization treatment, a uniform layer of Sn can be adsorbed on the surface of SiC particles. 2+ Ions lay the foundation for the next step of the activation process.

[0038] After obtaining sensitized SiC, the present invention mixes the sensitized SiC with an activation solution containing silver ions, performs activation treatment, washes with water until neutral, and dries to obtain activated SiC. In the present invention, the activation treatment time is preferably 35–45 min. In the present invention, the nano-SiC particles and Ag... + The preferred molar ratio is 42-45:1, more preferably 42.5:1. In this invention, the preferred method for preparing the silver ion-containing activation solution is as follows: 0.5g of silver nitrate solid powder is poured into a beaker, deionized water is added, and the mixture is continuously stirred with a glass rod until the solid powder is completely dissolved, preparing a 250ml silver nitrate solution. Ammonia water is added dropwise to the beaker using a dropper. As ammonia water is added, a brown precipitate will form in the solution. With continued addition of ammonia water, the brown precipitate will gradually disappear until the solution becomes clear again. The addition of ammonia water is then stopped, completing the preparation of the activation solution. In this invention, centrifugation dehydration is preferred before drying. The drying temperature in this invention is 50-60℃.

[0039] In this invention, the purpose of the activation treatment is to allow the Sn adsorbed on the surface of SiC particles to... 2+ With Ag in the activation solution + Reaction occurs: Sn 2+ +2Ag + →2Ag+Sn 4+ The result of the reaction is that a certain amount of Ag ions are adsorbed on the surface of the nano-SiC particles, which become nucleation sites for copper during the electroless copper plating process, causing the reduced Cu atoms in the plating solution to deposit on these nucleation sites.

[0040] After obtaining activated SiC, the present invention mixes the activated SiC with a copper plating solution for copper plating to obtain SiC with a copper-plated surface. In the present invention, the preparation method of the copper plating solution preferably includes the following steps:

[0041] Copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water are mixed and heated at 65–75°C until dissolved to obtain a copper sulfate solution; the mass ratio of copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water is 3.5:5:3.75:100.

[0042] Formaldehyde, methanol, and water were added sequentially to the obtained copper sulfate solution to obtain a copper plating solution; the mass-volume ratio of the copper sulfate pentahydrate, formaldehyde, and methanol was 3.5 g: 6 mL: 4 mL.

[0043] In this invention, stirring is preferably performed during copper plating, and the pH value of the copper plating solution is maintained at 12-13. In this invention, the nano-SiC particles and Cu... 2+ The preferred molar ratio is 8 to 10:1.

[0044] After obtaining the ball-milled material, the present invention performs spark plasma sintering on the ball-milled material to obtain a high-entropy alloy composite material. In the present invention, the pressure during spark plasma sintering is preferably 20–23 MPa, more preferably 21.6 MPa; the pulse current is preferably 5000–8000 A, and the holding time is 950°C for 15 min. The use of spark plasma sintering in the present invention has the advantages of rapid heating rate, short sintering time, and controllable microstructure, enabling rapid and dense sintering of the powder.

[0045] The present invention also provides a SiC / AlFeCrCoNi high-entropy alloy composite material prepared by any of the above methods, wherein the tensile strength of the composite material is ≥490.5MPa and the elongation is ≥4.27%.

[0046] To further illustrate the present invention, the technical solutions provided by the present invention will be described in detail below with reference to the embodiments, but they should not be construed as limiting the scope of protection of the present invention.

[0047] Example 1

[0048] Preparation of SiC with copper plating on the surface

[0049] a. SiC powder pretreatment

[0050] (1) Roughening treatment

[0051] 5g of nano-SiC powder was placed in an acid washing solution (prepared by mixing 14mL of 40% hydrofluoric acid and 6mL of 70% nitric acid, then bringing the volume to 250mL) and stirred for 4 hours to prevent the SiC powder from coarsening and settling. After 4 hours, stirring was stopped, and the solution was allowed to stand for 50 minutes. After the SiC powder had settled, the supernatant was slowly poured off, and distilled water was added, stirred, and allowed to settle again. This process of repeatedly soaking and rinsing the SiC powder was repeated, and the pH of the solution was continuously tested with pH paper. The cleaning was complete when the pH showed neutrality. The cleaned solution was then placed in an oven and dried at 60℃.

[0052] (2) Sensitization treatment

[0053] Pour 40 mL of concentrated hydrochloric acid into a beaker containing 20 g of SnCl2 solid powder. Then add deionized water to the beaker while stirring continuously. Continue stirring until the solution volume reaches 250 mL, then stop adding deionized water and stir continuously with a glass rod until the SnCl2 solid powder is completely dissolved in the concentrated hydrochloric acid. Slowly pour the roughened SiC powder into the beaker and stir with a glass rod for 10 minutes. Finally, soak and rinse with deionized water, following the same steps as the cleaning section after roughening treatment.

[0054] (3) Activation treatment

[0055] Weigh 0.5g of silver nitrate solid powder and prepare 250ml of silver nitrate solution. Add ammonia water dropwise to the beaker using a dropper. As ammonia water is added, a brown precipitate will form in the solution. Continue adding ammonia water; the brown precipitate will gradually disappear until the solution becomes clear again. Stop adding ammonia water at this point, completing the preparation of the activation solution. Slowly add the sensitized nano-SiC powder to the activation solution and soak for 40min. Then wash the SiC with deionized water. Finally, centrifuge the solution (10 minutes, 3000 rpm). After centrifugation, place the solution in a Type 101 electric heating drying oven and dry at 60℃.

[0056] b. Copper plating on SiC powder surface using chemical methods

[0057] (1) Preparation of copper plating solution

[0058] The prepared chemical copper plating solution for this experiment was 250 mL, and the volume was weighed using an electronic balance.

[0059] Pour 3.5g of copper sulfate pentahydrate crystals, 5g of EDTA solid powder, and 3.75g of potassium sodium tartrate solid powder into a 250mL beaker. Slowly add deionized water to the beaker until it reaches the 100mL mark. Place the beaker in an HH-4 digital display constant temperature water bath at 70℃. During heating, stir continuously with a glass rod and adjust the pH of the solution with a 30% sodium hydroxide solution to maintain the pH between 12 and 13. After heating for approximately 60 minutes, the copper sulfate crystals, EDTA solid powder, and potassium sodium tartrate solid powder in the beaker will have completely dissolved. Remove the beaker from the water bath to end the heating process. Slowly add 6mL of formaldehyde solution and 4mL of methanol solution to the solution in the beaker, then add distilled water until the solution level reaches the 250mL mark. Continuously stir the solution with a glass rod to ensure homogeneity, thus obtaining the copper plating solution.

[0060] The pretreated nano-SiC powder was slowly added to the copper plating solution, and constant stirring with a glass rod was necessary to avoid affecting the plating effect. During the copper plating process, the pH of the solution should be maintained between 12 and 13 (adding 30% sodium hydroxide solution by volume using a dropper as needed based on test results). After 12 minutes of reaction, a uniform bronze color was observed on the surface of the SiC, at which point the copper plating was complete. The SiC was then repeatedly rinsed with deionized water until the solution pH was neutral. The copper-plated solution was then centrifuged (3000 rpm for 10 minutes). The centrifuged SiC was then dried in a drying oven at 60°C to obtain copper-plated SiC, which was then placed in a sample bag and labeled.

[0061] Example 2

[0062] The copper-plated SiC powder and high-entropy alloy powder prepared in Example 1 were mixed at a mass ratio of 1:15 and placed into a spherical grinding jar. 350g of glass balls were then added to the spherical grinding jar. The jars were symmetrically placed on a ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 300 r / min for 240 min to obtain the milled material.

[0063] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0064] Example 3

[0065] The copper-plated SiC powder and high-entropy alloy powder prepared in Example 1 were mixed at a mass ratio of 1:16 and placed into a spherical grinding jar. 500g of glass balls were then added to the spherical grinding jar. The jars were symmetrically placed on a ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 200 r / min for 300 min to obtain the milled material.

[0066] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0067] Example 4

[0068] The copper-plated SiC powder and high-entropy alloy powder prepared in Example 1 were mixed at a mass ratio of 1:14 and placed into a spherical grinding jar. 500g of glass balls were then added to the spherical grinding jar. The jars were symmetrically placed on a ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 200 r / min for 300 min to obtain the milled material.

[0069] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0070] Comparative Example 1

[0071] Nano-SiC particles and high-entropy alloy powder were mixed at a mass ratio of 1:15 and placed into a spherical grinding jar. 500g of glass balls were then added to the jar. The grinding jars were symmetrically placed on the ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 200 r / min for 300 min to obtain the milled material.

[0072] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0073] Comparative Example 2

[0074] The difference between the preparation of copper-plated SiC and Example 1 is that the SiC powder was not pretreated and copper plating was performed directly. The specific operation steps are as follows:

[0075] (1) Preparation of copper plating solution

[0076] The prepared chemical copper plating solution for this experiment was 250 mL, and the volume was weighed using an electronic balance.

[0077] Pour 3.5g of copper sulfate pentahydrate crystals, 5g of EDTA solid powder, and 3.75g of potassium sodium tartrate solid powder into a 250mL beaker. Slowly add deionized water to the beaker until it reaches the 100mL mark. Place the beaker in an HH-4 digital display constant temperature water bath at 70℃. During heating, stir continuously with a glass rod and adjust the pH of the solution with a 30% sodium hydroxide solution to maintain the pH between 12 and 13. After heating for approximately 60 minutes, the copper sulfate crystals, EDTA solid powder, and potassium sodium tartrate solid powder in the beaker will have completely dissolved. Remove the beaker from the water bath to end the heating process. Slowly add 6mL of formaldehyde solution and 4mL of methanol solution to the solution in the beaker, then add distilled water until the solution level reaches the 250mL mark. Continuously stir the solution with a glass rod to ensure homogeneity, thus obtaining the copper plating solution.

[0078] The pretreated nano-SiC powder was slowly added to the copper plating solution, and constant stirring with a glass rod was necessary to avoid affecting the plating effect. During the copper plating process, the pH of the solution should be maintained between 12 and 13 (adding 30% sodium hydroxide solution by volume using a dropper as needed based on test results). After approximately 12 minutes of reaction, a uniform bronze color was observed on the surface of the SiC, at which point the copper plating was complete. The SiC was then repeatedly rinsed with deionized water until the solution pH was neutral. The copper-plated solution was then centrifuged (3000 rpm for 10 minutes). The centrifuged SiC was then dried in a drying oven at 60°C to obtain copper-plated SiC, which was then placed in a sample bag and labeled.

[0079] The copper-plated SiC and high-entropy alloy powder prepared above were mixed at a mass ratio of 1:15 and placed into a spherical grinding jar. 350g of glass balls were then added to the spherical grinding jar. The jars were symmetrically placed on a ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 300 r / min for 240 min to obtain the milled material.

[0080] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0081] Comparative Example 3

[0082] The copper-plated SiC powder and high-entropy alloy powder prepared in Example 1 were mixed at a mass ratio of 1:18 and placed into a spherical grinding jar. 350g of glass balls were then added to the spherical grinding jar. The jars were symmetrically placed on a ball mill, tightened, and the cover was closed. The milling process was performed at a speed of 300 r / min for 240 min to obtain the milled material.

[0083] The ball-milled material was subjected to plasma sintering using an SPS device (pressure 21.6 MPa, pulse current 6000 A, holding at 950℃ for 15 min) to obtain SiC / AlFeCrCoNi composite material.

[0084] Performance testing

[0085] The strength and toughness of the composite materials prepared in each embodiment and comparative example were tested, and the specific results are shown in Table 1.

[0086] Table 1 Strength and toughness of composite materials

[0087] Tensile strength (MPa) Elongation (%) AlFeCrCoNi alloy 225.01 2.79 Example 2 493.7 4.29 Example 3 490.5 4.31 Example 4 495.5 4.27 Comparative Example 1 228.7 2.77 Comparative Example 2 228.3 2.77 Comparative Example 3 486.4 4.31

[0088] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for preparing a SiC / AlFeCrCoNi high-entropy alloy composite material, characterized in that, Includes the following steps: 1) Mix copper-plated SiC with AlFeCrCoNi high-entropy alloy powder, and ball mill the mixture to obtain ball-milled material; 2) The ball-milled material is subjected to spark plasma sintering to obtain a high-entropy alloy composite material; The method for preparing SiC with copper plating on its surface in step 1) includes the following steps: a. Mix and stir nano-SiC particles with an acidic SnCl2 solution, wash with water until neutral, to obtain sensitized SiC; b. The sensitized SiC is mixed with an activation solution containing silver ions, activated, washed with water until neutral, and dried to obtain activated SiC; c. The activated SiC is mixed with a copper plating solution and copper plating is performed to obtain SiC with copper plating on its surface; In step a, the nano-SiC particles are roughened before being mixed with the SnCl2 acid solution; the roughening process is as follows: the nano-SiC particles are acid-washed, left to stand, and washed with water.

2. The preparation method according to claim 1, characterized in that, The pickling solution is a mixture of hydrofluoric acid solution and nitric acid solution.

3. The preparation method according to claim 1, characterized in that, The SnCl2 mass concentration in the acidic solution of SnCl2 mentioned in step a is 7%~10%.

4. The preparation method according to claim 1, characterized in that, The preparation method of the copper plating solution in step c includes the following steps: Copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water are mixed and heated at 55-65°C until dissolved to obtain a copper sulfate solution; the mass ratio of copper sulfate pentahydrate, EDTA, sodium potassium tartrate, and water is 3.5:5:3.75:

100. Formaldehyde, methanol, and water were added sequentially to the obtained copper sulfate solution to obtain a copper plating solution; the mass-volume ratio of the copper sulfate pentahydrate, formaldehyde, and methanol was 3.5 g: 6 mL: 4 mL.

5. The method according to claim 1, characterized in that, During copper plating in step c, the solution is stirred and the pH of the copper plating solution is maintained at 12-13.

6. The preparation method according to claim 1, characterized in that, The mass ratio of the copper-plated SiC to the AlFeCrCoNi high-entropy alloy powder in step 1) is 1:14~16.

7. The preparation method according to claim 1, characterized in that, In step 2), the pressure during discharge plasma sintering is 20~23MPa, the pulse current is 5000~8000A, and the temperature is held at 950℃ for 15min.

8. The SiC / AlFeCrCoNi high-entropy alloy composite material prepared by any one of claims 1 to 7, characterized in that, The composite material has a tensile strength ≥490.5MPa and an elongation ≥4.27%.

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