A method for producing a high-density and high-conductivity metallized Al film on a flexible organic-based film

By using radio frequency capacitively coupled plasma pretreatment and resistive evaporation technology, the problems of poor density and conductivity of flexible organic thin films with a thickness of more than 20 μm were solved, and metallized Al films with high density and high conductivity were prepared, which improved the performance of electronic devices, optical devices and sensors.

CN118064838BActive Publication Date: 2026-07-24ANHUI UNIVERSITY OF TECHNOLOGY
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Patent Information

Application Number
CN202410169802.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-02-06
Publication Date
2026-07-24
Estimated Expiration
2044-02-06

AI Technical Summary

Technical Problem

Existing technologies are insufficient to effectively improve the density and conductivity of flexible organic films with a thickness of 20 μm or more, leading to a decline in the performance of metallized films in electronic devices, optical devices, and sensor devices.

Method used

A flexible organic substrate film was pretreated using Ar gas with radio frequency capacitively coupled plasma pretreatment technology, and an Al film was deposited by resistive evaporation technology. The film density and conductivity were improved by physical etching and chemical modification.

Benefits of technology

Without damaging the flexible organic base film, the density and conductivity of the metallized Al film were significantly improved, thus enhancing the film's electrical properties and lifespan.

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Abstract

The application provides a method for preparing a high-density and high-conductivity metallized Al film on a flexible organic base film, which comprises the following steps: performing radio frequency capacitive coupling plasma pretreatment on a 20-100 mu m flexible organic film as a base film; and depositing an Al film on the pretreated base film by using resistance evaporation technology, wherein Ar gas is introduced as a pretreatment gas, ionized Ar ions have etching effect on the base film but do not cause thermal damage to the base film, and then a suitable evaporation coating process is adopted, so that the method has the dual effects of physical etching and chemical modification on the 20-100 mu m flexible organic base film without damaging the flexible organic base film, and a high-density, high-conductivity metallized Al film is prepared.
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