Semiconductor structure, method for preparing semiconductor structure, and memory

By introducing the first air gap and the metal silicide layer into the bit line structure, the problem of contact window oxidation is solved, the conductivity is improved, the parasitic capacitance is reduced, and the performance of the semiconductor memory device is improved.

CN118785694BActive Publication Date: 2025-10-03CHANGXIN MEMORY TECH INC
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Patent Information

Application Number
CN202310341070.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-30
Publication Date
2025-10-03
Estimated Expiration
2043-03-30

AI Technical Summary

Technical Problem

In semiconductor memory devices, oxidation of the polysilicon material of the contact window leads to reduced conductivity, causing memory cell failure.

Method used

A first air gap is introduced between the side wall of the bit line structure and the contact window so that the upper surface of the contact window is higher than the upper surface of the air gap, and a metal silicide layer is provided between the contact window and the conductive layer to increase the difficulty for oxide molecules and free radicals to migrate to the interface, while reducing the dielectric constant of the medium to reduce parasitic capacitance.

Benefits of technology

The conductivity of the contact window is improved, the failure of the memory cell is reduced, and the parasitic capacitance between the bit line and the contact window is reduced, thereby improving the performance of the semiconductor.

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Abstract

The present disclosure provides a semiconductor structure, a method for preparing the semiconductor structure, and a memory, relating to the field of semiconductor technology. The semiconductor structure includes: a substrate; at least one active region formed in the substrate; a bitline structure located on the substrate; a contact window located on at least one side of the bitline structure and adjacent to the bitline structure; a conductive layer located above the contact window; wherein the bitline structure includes a bitline, a bitline protection layer, and a first air gap, the bitline protection layer covers the sidewalls of the bitline, and the first air gap is located in the bitline protection layer; the bitline is electrically connected to one of the drain region and the source region of the active region, and the contact window is electrically connected to the other; the upper surface of the contact window is higher than the upper surface of the first air gap. The present disclosure increases the difficulty of oxygen-containing small molecules and oxygen free radicals in the first air gap being liberated to the contact window / conductive layer (or contact window / metal silicide layer) interface, thereby improving the problem of contact window oxidation.
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