Silicon wafer cutting device, multi-wire cutting machine, silicon wafer processing method and silicon wafer
By using cutting rollers with different hardness to run-in with cutting lines in the silicon wafer cutting device, the total thickness deviation and large wire bow problems caused by fine lineization of diamond wires are solved, and efficient and accurate silicon wafer cutting is achieved.
Patent Information
- Application Number
- CN202310678887.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-08
- Publication Date
- 2024-12-10
AI Technical Summary
During the multi-line diamond wire cutting process of single crystal silicon, the total thickness deviation (TTV) caused by thinning of diamond wire is high and the wire bow is large, which affects the cutting quality and efficiency.
Design a silicon wafer cutting device, adopting multiple cutting rollers, in which the surface layer hardness of at least two cutting rollers is different, and the cutting rollers with different hardness are run-in with the cutting line, quickly tensioning the cutting line, reducing the cutting line bow, and improving Cutting efficiency.
Through cutting roller design with different hardness, the cutting line is quickly tightened, the cutting line bow is reduced, the cutting efficiency and accuracy are improved, and the cutting quality and economic benefits are met.
Smart Images
Figure CN119099055A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of silicon wafer cutting, and in particular to a silicon wafer cutting device, a multi-wire saw, a silicon wafer processing method and a silicon wafer. Background Art
[0002] With the continuous development of the world economy, the demand for efficient energy in modernization construction is growing. Photovoltaic power generation, as a green energy and a major energy source for sustainable development of mankind, is increasingly valued and vigorously developed by countries around the world.
[0003] During the multi-wire diamond wire cutting process of single crystal silicon, with the gradual development of thinning and fine wire, the tension of the diamond wire is gradually reduced. During the high-speed cutting process of the diamond wire, the wire groove only serves as a guide. The shaking of the diamond wire causes the surface of the silicon wafer to be uneven and not at the same level, resulting in a high TTV (Total Thickness Variation), which affects the cutting quality. In addition, the phenomenon of large wire bow becomes increasingly obvious during the cutting process, reducing the cutting efficiency. Summary of the invention
[0004] The purpose of the present disclosure is to provide a silicon wafer cutting device, a multi-wire saw, a silicon wafer processing method and a silicon wafer, so as to solve the problems of high TTV and large wire bow caused by thinning of diamond wire.
[0005] In order to achieve the above-mentioned objectives, the present disclosure provides a silicon wafer cutting device, comprising a plurality of cutting rollers and cutting wires wound on the plurality of cutting rollers, the cutting rollers comprising a roller core and a surface layer located at the periphery of the roller core, wherein, among the plurality of cutting rollers, the hardness of the surface layers of at least two of the cutting rollers is different.
[0006] Optionally, among the plurality of cutting rollers, a difference in hardness of the surface layers of any two of the cutting rollers is between 1-10.
[0007] Optionally, the hardness is Shore A hardness, and the Shore A hardness of the surface layer of each cutting roller is between 90HA and 100HA.
[0008] Optionally, the surface layer is at least one of polyurethane and polytetrafluoroethylene.
[0009] Optionally, there are two cutting rollers, and the surface layers of the two cutting rollers have different hardnesses.
[0010] Optionally, there are three cutting rollers, and the surface layers of at least two of the cutting rollers have different hardnesses.
[0011] Optionally, among the plurality of cutting rollers,
[0012] The surface layers of any two cutting rollers are made of the same material and the contents of the components in the material are different; or,
[0013] The surface layers of any two cutting rollers are made of the same material but have different thicknesses; or,
[0014] The surface layers of any two cutting rollers are made of different materials.
[0015] According to a second aspect of the present disclosure, a multi-wire saw is also provided, comprising the above-mentioned silicon wafer cutting device.
[0016] According to a third aspect of the present disclosure, a silicon wafer processing method is also provided, wherein the silicon wafer processing method uses the above-mentioned silicon wafer cutting device to cut silicon rods to obtain silicon wafers.
[0017] Optionally, the silicon wafer processing method comprises:
[0018] Heat engine;
[0019] Running-in, controlling the rotation speeds of the plurality of cutting rollers to be the same, and running-in the surface layers of the cutting rollers with the cutting lines; and
[0020] Slicing, the cutting wire cuts the silicon rod,
[0021] Wherein, in the running-in step, the running-in amount of the cutting line located on the cutting roller with greater hardness is smaller, and the running-in amount of the cutting line located on the cutting roller with less hardness is larger, so as to tension the cutting line.
[0022] According to a fourth aspect of the present disclosure, a silicon wafer is also provided, wherein the silicon wafer is obtained by the above-mentioned silicon wafer processing method.
[0023] Through the above technical solution, in the silicon wafer processing device provided by the present disclosure, the hardness of the surface layer of the cutting roller is designed, and cutting rollers with different surface layer hardness are used. When the cutting line and the cutting roller are run-in, due to the different hardness, the dynamic friction coefficient of the cutting line is different. The cutting line offset on the cutting roller with a large surface layer hardness is small, and the cutting line offset on the cutting roller with a small surface layer hardness is large, which can make the cutting line quickly tensioned and speed up the running-in of the cutting roller. In addition, during the cutting process, due to the different hardness, the deformation of the cutting line can be released, the cutting line bow can be reduced, and the cutting efficiency can be improved.
[0024] Other features and advantages of the present disclosure will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:
[0026] Figure 1 It is a schematic structural diagram of a silicon wafer cutting device provided by an exemplary embodiment of the present disclosure.
[0027] Figure 2 It is a schematic structural diagram of a silicon wafer cutting device provided by another exemplary embodiment of the present disclosure.
[0028] Figure 3 is a flow chart of a silicon wafer processing method provided by an exemplary embodiment of the present disclosure.
[0029] Description of Reference Numerals
[0030] 1-cutting roller; 11-roller core; 12-surface layer; 2-cutting line. DETAILED DESCRIPTION
[0031] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.
[0032] In the present disclosure, unless otherwise specified, directional words such as "inner" and "outer" used refer to the inner and outer sides of the corresponding component profiles, and "circumferential" and "radial" are defined with respect to the circumferential direction of the cutting roller. In addition, in the following description, when referring to the drawings, unless otherwise explained, the same reference numerals in different drawings represent the same or similar elements.
[0033] like Figure 1 and Figure 2 As shown, the present disclosure provides a silicon wafer cutting device, which includes a plurality of cutting rollers 1 and a cutting wire 2 wound around the plurality of cutting rollers 1, the cutting roller 1 includes a roller core 11 and a surface layer 12 located at the periphery of the roller core 11, wherein among the plurality of cutting rollers 1, the hardness of the surface layer 12 of at least two cutting rollers 1 is different.
[0034] Here, it should be noted that the roller core 11 can be made of metal materials such as carbon steel and alloy, and the surface layer 12 can be made of at least one of polyurethane and polytetrafluoroethylene. The surface layer 12 can be formed on the surface of the roller core 11 by coating or spraying. The different hardness of the surface layer 12 can be achieved by the material or thickness design of the surface layer 12 itself, and of course it can also be achieved by the material of the roller core 11 or the structural design of the outer peripheral surface, such as providing an annular groove, a structural layer, etc. on the outer peripheral surface of the roller core 11. In addition, the hardness mentioned here and below refers to the Shore hardness ("Shore hardness" refers to the reading of the value measured by a Shore hardness tester, its unit is "degree", and its description method is divided into A and D, representing different hardness ranges, respectively. The range of the Shore A hardness tester is 0-100HA, and the range of the Shore D hardness tester is 0-100HD. The Shore A hardness is used in the following text). Of course, it is not limited to the Shore hardness, and it is sufficient to ensure that the same hardness is used for comparison. The number of multiple cutting rollers 1 is not limited here, and can be Figure 1 The two shown in Figure 2 In the embodiment where three cutting rollers 1 are provided, the hardness of the surface layers 12 of the three cutting rollers 1 may be different, or the hardness of the surface layers 12 of any two of the cutting rollers 1 may be different, which all fall within the protection scope of the present disclosure.
[0035] Through the above technical scheme, in the silicon wafer processing device provided by the present invention, the hardness of the surface layer 12 of multiple cutting rollers 1 is designed, and cutting rollers with different hardness of the surface layer 12 are used. When the cutting line 2 and the cutting roller 1 are run-in, due to the different hardness, the dynamic friction coefficient of the cutting line 2 is different. The cutting line offset on the cutting roller with a large surface layer hardness is small, and the cutting line offset on the cutting roller with a small surface layer hardness is large. The cutting line 2 can be quickly tensioned and the running-in of the cutting roller 1 is accelerated. In addition, during the cutting process, due to the different hardness, the deformation of the cutting line 2 can be released, the cutting line bow is reduced, and the cutting efficiency is improved.
[0036] When designing the hardness of the surface layer 12 of different cutting rollers 1, among the multiple cutting rollers 1, the difference in hardness of the surface layer 12 of any two cutting rollers 1 is between 1-10. Preferably, the difference between the two is between 2-10, and more preferably, the difference between the two is between 2-5. Under the condition of ensuring that the cutting line 2 is quickly tensioned, the difference in hardness between the two cannot be too large to avoid excessive deviation and improve cutting accuracy. The same pair of cutting rollers can be coated with two materials of different hardness to form a surface layer 12, or a plurality of materials of different hardness can be coated to form a surface layer 12, both of which belong to the protection scope of the present disclosure. Compared with the technical solution that multiple cutting rollers 1 are coated with the same hardness material to form a surface layer 12, the multiple cutting rollers 1 in the silicon wafer cutting device provided by the present disclosure adopt an asymmetric hardness arrangement, which can reduce the running-in time of the cutting device, reduce the occurrence of wire bow during the cutting process, and ensure the cutting effect.
[0037] In the present disclosure, the hardness of the surface layer 12 of each cutting roller 1 is between 90 and 100. Preferably, the Shore A hardness of the surface layer 12 can be 93HA, 94HA, 95HA, 96HA, 97HA, 98HA, or 99HA, which can be adjusted according to cutting requirements and coating process.
[0038] exist Figure 1 In the embodiment shown, there are two cutting rollers 1, for example, the two cutting rollers 1 can be arranged in the same horizontal direction or the same vertical direction or arranged obliquely, the cutting roller A can be coated with a material with a Shore hardness of a, and the cutting roller B can be coated with a material with a Shore hardness of b, and the distribution range of the hardness values a and b is between 90-100. In the case of coating with materials of different hardness, the coating thickness of the surface layer 12 of the cutting roller A and the cutting roller B can be the same. Of course, in the case of coating with the same material, the content of different components in the material can be adjusted, or the thickness of the coating surface layer 12 can be adjusted, or the structure of the outer peripheral surface of the roller core 11 can be adjusted, etc., to achieve the effect of having different hardness.
[0039] exist Figure 2In the embodiment shown, there are three cutting rollers 1, for example, the three cutting rollers 1 can be arranged in an inverted triangle, and the hardness of the surface layer 12 of at least two cutting rollers 1 is different. Specifically, the present disclosure includes an implementation in which the cutting roller C, the cutting roller D, and the cutting roller E are coated with materials of different hardness respectively; it also includes an embodiment in which the cutting roller C and the cutting roller D are coated with a material of the same hardness, and the cutting roller E is coated with a material of another hardness; it also includes an embodiment in which the cutting roller D and the cutting roller E are coated with a material of the same hardness, and the cutting roller C is coated with a material of another hardness, and of course it also includes an embodiment in which the cutting roller C and the cutting roller E are coated with a material of the same hardness, and the cutting roller D is coated with a material of another hardness. In the embodiment in which there are four cutting rollers 1, the hardness of the surface layer 12 of any two or three cutting rollers can be different, or the hardness of the surface layer 12 of the four cutting rollers 1 can be different, all of which belong to the protection scope of the present disclosure.
[0040] Furthermore, in order to achieve the effect that the surface layers 12 of different cutting rollers 1 have different hardnesses, in the present disclosure, the surface layer 12 may be at least one layer arranged in sequence along the radial direction, and the surface layer 12 and the roller core 11 may be made of different materials, and when the surface layer 12 is multi-layered, the multi-layered surface layers 12 may be made of the same material but different hardnesses; or, the multi-layered surface layers 12 may be made of different materials. For example, an embodiment of spraying one layer and coating one layer may be adopted.
[0041] According to a second aspect of the present disclosure, a multi-wire saw is also provided, comprising the silicon wafer cutting device described above. The multi-wire saw can achieve rapid tensioning of the cutting wire 2, increase the tensioning force of the cutting wire 2, and reduce the occurrence of wire bow. The multi-wire saw has all the beneficial effects of the above-mentioned silicon wafer cutting device, which will not be repeated here.
[0042] According to the third aspect of the present disclosure, a silicon wafer processing method is also provided. The silicon wafer processing method adopts the above-mentioned multi-wire sawing machine to cut silicon rods to obtain silicon wafers. The silicon wafers cut by the multi-wire sawing machine provided by the present disclosure can meet the requirements in terms of TTV.
[0043] like Figure 3As shown, the silicon wafer processing method provided by the present disclosure includes steps 301 to 303. In step 301, the multi-wire sawing machine is heated up, and multiple cutting rollers 1 are rotated before cutting. After reaching thermal equilibrium, the cutting accuracy can be guaranteed, and the stability of the whole machine is higher; in step 302, the cutting rollers 1 and the cutting wires 2 are run-in, and the rotation speeds of the multiple cutting rollers 1 are controlled to be the same. The surface layer 12 of the cutting roller 1 is run-in with the cutting wire 2. By controlling the acceleration and deceleration of the cutting roller 1, relative sliding occurs between the cutting roller 1 and the cutting wire 2, and the dynamic friction of the cutting wire on the cutting roller with a large surface layer hardness is reduced. The friction coefficient is small, the amount of offset is small, and the amount of running-in is small. The dynamic friction coefficient of the cutting line on the cutting roller with a small surface hardness is large, the amount of offset is large, and the amount of running-in is large. In this process, the cutting line 2 is tensioned to improve the running-in efficiency; after the running-in is completed, step 103 is performed to perform normal cutting, and the cutting line 2 cuts the silicon rod. During the cutting process, due to the difference in hardness, the deformation of the cutting line 2 can be released, the wire bow can be reduced, and the cutting effect can be ensured. The multi-wire cutting machine can obtain hundreds of silicon wafers with uniform thickness at one time. The corresponding process parameters can be adjusted according to the situation of the equipment.
[0044] According to the fourth aspect of the present disclosure, a silicon wafer is also provided. The silicon wafer is obtained by the silicon wafer processing method introduced above. The obtained silicon wafer has fewer geometric defects, can obtain an ideal cutting effect, and has higher cutting efficiency and high economic benefits.
[0045] The preferred embodiments of the present disclosure are described in detail above in conjunction with the accompanying drawings; however, the present disclosure is not limited to the specific details in the above embodiments. Within the technical concept of the present disclosure, a variety of simple modifications can be made to the technical solution of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.
[0046] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present disclosure will not further describe various possible combinations.
[0047] In addition, various embodiments of the present disclosure may be arbitrarily combined, and as long as they do not violate the concept of the present disclosure, they should also be regarded as the contents disclosed by the present disclosure.
Claims
1. A silicon wafer cutting device, characterized in that: The invention comprises a plurality of cutting rollers and cutting wires wound on the plurality of cutting rollers, wherein the cutting roller comprises a roller core and a surface layer located at the periphery of the roller core, wherein among the plurality of cutting rollers, the surface layers of at least two of the cutting rollers have different hardnesses.
2. The silicon wafer cutting device according to claim 1, characterized in that: Among the plurality of cutting rollers, a difference in hardness of the surface layers of any two of the cutting rollers is between 1-10.
3. The silicon wafer cutting device according to claim 1, characterized in that: The hardness is Shore A hardness, and the Shore A hardness of the surface layer of each cutting roller is between 90HA and 100HA.
4. The silicon wafer cutting device according to claim 1, characterized in that: The surface layer is at least one of polyurethane and polytetrafluoroethylene.
5. The silicon wafer cutting device according to claim 1, characterized in that: There are two cutting rollers, and the surface layers of the two cutting rollers have different hardnesses.
6. The silicon wafer cutting device according to claim 1, characterized in that: There are three cutting rollers, and the surface layers of at least two of the cutting rollers have different hardnesses.
7. The silicon wafer cutting device according to claim 1, characterized in that: Among the plurality of cutting rollers, The surface layers of any two cutting rollers are made of the same material with different contents of components in the material; or, The surface layers of any two cutting rollers are made of the same material but have different thicknesses, or, The surface layers of any two cutting rollers are made of different materials.
8. A multi-wire cutting machine, characterized in that: A silicon wafer cutting device comprising the silicon wafer cutting device according to any one of claims 1 to 7.
9. A silicon wafer processing method, characterized in that: The silicon wafer processing method adopts the multi-wire sawing machine described in claim 8 to cut silicon rods to obtain silicon wafers.
10. The silicon wafer processing method according to claim 9, characterized in that: The silicon wafer processing method comprises: Heat engine; Running-in, controlling the rotation speeds of the plurality of cutting rollers to be the same, and running-in the surface layers of the cutting rollers with the cutting lines; and Slicing, the cutting wire performs a cutting action on the silicon rod; Wherein, in the running-in step, the running-in amount of the cutting line on the cutting roller with greater hardness is smaller, and the running-in amount of the cutting line on the cutting roller with less hardness is larger, so as to tension the cutting line.
11. A silicon wafer, characterized in that: The silicon wafer is obtained by the silicon wafer processing method according to claim 9 or 10.