Heterojunction battery and preparation method thereof

The heterojunction battery design addresses poor passivation by incorporating widened and structured passivation layers, enhancing edge passivation and improving efficiency through reduced carrier recombination and increased collection.

CN119133263AInactive Publication Date: 2024-12-13TRINA SOLAR CO LTD
View PDF 6 Cites 4 Cited by

Patent Information

Application Number
CN202411233403.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-04
Publication Date
2024-12-13
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

The existing heterojunction batteries suffer from poor passivation effects due to thin passivation layers, which affect the conversion efficiency.

Method used

A heterojunction battery design with enhanced passivation layers, including a first passivation layer plated around the substrate's sides and surface, and a second passivation layer on the substrate's surface, along with doping and conductive layers, to improve edge passivation and reduce carrier recombination.

Benefits of technology

The enhanced passivation layers increase the short-circuit current and conversion efficiency by reducing carrier recombination in the edge recombination region, while maintaining optimal carrier transmission.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119133263A_ABST
    Figure CN119133263A_ABST
Patent Text Reader

Abstract

The invention relates to the field of solar cells, particularly provides a heterojunction cell, and aims to solve the problem that the passivation effect of the side face of an existing heterojunction cell is poor. In order to achieve the purpose, the heterojunction cell disclosed by the invention comprises a substrate, a first passivation layer and a second passivation layer, the substrate is provided with a first surface, a second surface and a side surface adjacent to the first surface and the second surface; the first passivation layer is located on the first surface of the substrate and is plated around the side surface and the second surface of the substrate; the second passivation layer is located on the second surface of the substrate. The first passivation layer which is plated to the side surface and the second surface in a winding manner can passivate the edge composite area of the substrate, so that the possibility that carriers are compounded in the edge composite area is reduced, the probability that the carriers moving to the edge composite area are collected is improved, and the efficiency of the cell is improved.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Heterojunction solar cell and manufacturing method thereof

    CN114171633A

  • Silicon heterojunction solar cell and preparation method thereof

    CN117613128A

  • Silicon-based heterojunction solar cell and preparation method thereof

    CN118431309A

  • Photovoltaic element and manufacture thereof

    JP2001044461A

  • Rear-emitter solar cell structure having a heterojunction, and method and device for producing same

    WO2021044232A1

Cited By

  • Battery structure, battery monomer and photovoltaic system

    CN120358803A

  • Battery structure, battery cell, and photovoltaic system

    CN120358803B

  • Solar cell, preparation method thereof and photovoltaic module

    CN120475775A

  • Solar cell and method of manufacturing the same, photovoltaic module

    CN120475775B