X-ray detector based on ionic liquid-metal halide and preparation method thereof

Abstract

The invention provides an X-ray detector based on ionic liquid-metal halide and a preparation method of the X-ray detector, and belongs to the technical field of X-ray detectors. The X-ray detector comprises a substrate, a thick film active layer and an electrode which are sequentially stacked from bottom to top; the preparation method comprises the following steps: mixing an ionic liquid, a metal halide and a polymer, and heating at a high temperature to obtain a molten thick film precursor; coating the surface of a high-temperature preheated substrate with the thick film active layer, and cooling to obtain the thick film active layer; and depositing an electrode on the thick film active layer to prepare the X-ray detector. The ionic liquid adopts an imidazole halide salt compound, an imidazole pseudo-halide salt compound, a piperidine imine salt compound or an imidazole trifluoromethanesulfonate compound. The ionic liquid, the metal halide and the polymer are used as thick film raw materials, the thick film active layer grows on the surface of the substrate in situ after melting, cooling and solidification, the problem that the thick film is difficult to grow is solved, and the X-ray detector achieves low-dose detection and has the excellent performance of high current response.

Description

Technical Field

[0001] The invention belongs to the technical field of X-ray detectors, and in particular relates to an X-ray detector based on ionic liquid-metal halide and a preparation method thereof. Background Art

[0002] X-ray detectors are usually used in medical imaging, security inspection, scientific research, space communication and other fields. Especially in X-ray medical detection, people are paying more and more attention to the radiation dose of patients and medical staff. There is an urgent need for equipment with high detection sensitivity to achieve ultra-low dose imaging. At the same time, imaging of complex human tissues has higher requirements for imaging resolution. Current X-ray detectors have shortcomings in X-ray detection materials, device structure design and imaging processing.

[0003] In recent years, ionic liquids, metal compounds, polymers, etc. have been widely used in X-ray detectors to produce thick-film X-ray detectors, which have the advantages of strong universality and good uniformity, and can effectively improve the resolution of X-ray imaging.

[0004] However, existing thick-film X-ray detectors still have technical problems such as difficulty in thick film growth and low current response of thick-film radiation detectors, making it impossible to achieve low-dose detection. Summary of the invention

[0005] In view of this, the present invention aims to provide an X-ray detector based on ionic liquid-metal halide and a preparation method thereof, aiming to solve at least one technical problem in the background technology.

[0006] The present invention is achieved in that:

[0007] The present invention provides an ionic liquid-metal halide based X-ray detector, which comprises a substrate, a thick film active layer and an electrode stacked in sequence from bottom to top;

[0008] The molten thick film precursor is coated on a substrate preheated at a high temperature, and a thick film active layer is obtained after cooling;

[0009] The raw materials of the thick film precursor include ionic liquid, metal halide and polymer;

[0010] The ionic liquid is any one of an imidazole halide compound, an imidazole pseudo-halide compound, a piperidine imide salt compound, and an imidazole trifluoromethanesulfonate compound.

[0011] Furthermore, the raw material of the thick film precursor also includes an organic solvent; the organic solvent is selected from at least one of amides, hydrazides, alcohols, esters, sulfones, sulfoxides, ketones, nitrile solvents or tetrahydrofuran.

[0012] The present invention also provides a method for preparing the above-mentioned ionic liquid-metal halide based X-ray detector, comprising the following steps:

[0013] The raw materials of the thick film precursor are mixed in a set ratio, and heated at a high temperature to obtain a molten thick film precursor;

[0014] Preheating the substrate to a set temperature, and then coating the molten thick film precursor on the surface of the substrate;

[0015] Cooling to the target temperature at a set cooling rate to obtain a thick active layer uniformly dispersed and solidified on the surface of the substrate;

[0016] Finally, an electrode is deposited on the thick film active layer to prepare an X-ray detector;

[0017] The raw materials of the thick film precursor include ionic liquid, metal halide and polymer.

[0018] Furthermore, the ionic liquid is any one of imidazole halide compounds, imidazole pseudo-halide compounds, piperidine imide compounds, and imidazole trifluoromethanesulfonate compounds.

[0019] Furthermore, the set temperature is 90°C to 180°C; the cooling rate is 4.5°C / h to 5.5°C / h; and the target temperature is 30°C to 80°C.

[0020] Furthermore, an organic solvent is added to the raw materials of the thick film precursor, and the organic solvent is selected from at least one of amide solvents, hydrazide solvents, alcohol solvents, ester solvents, sulfone solvents, sulfoxide solvents, ketone solvents, nitrile solvents or tetrahydrofuran.

[0021] Furthermore, the molar ratio of the ionic liquid, the metal halide and the polymer is (0.2-4):1:1, preferably 2:1:1.

[0022] Furthermore, the molar ratio of the ionic liquid to the organic solvent is 1:1.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] 1. The present invention uses specific ionic liquids, metal halides and polymers as thick film raw materials, and in-situ grows a thick film active layer on the substrate surface by melting, cooling and solidifying, thereby overcoming the difficulty of thick film growth. At the same time, the X-ray detector formed by the thick film active layer has excellent optical properties such as high current response.

[0025] 2. The present invention can produce an efficient and stable thick-film X-ray detector, realize low-dose detection, and avoid damage to cells or organs caused by ionizing radiation under high-dose conditions, or even cause death. The X-ray detector of the present invention has broad potential application prospects in the fields of medical imaging, industrial detection, etc.

[0026] 3. The present invention simplifies the technical process, is easy to prepare and has low cost.

[0027] 4. The present invention prepares a thick film active layer by melting, cooling and solidifying, thereby avoiding pores generated during the volatilization of thick film precursors and solvents, and improving the quality of the thick film active layer.

[0028] 5. The thick film active layer prepared by the present invention has the advantages of good stability and high crystal quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a structural schematic diagram of the X-ray detector of the present invention;

[0030] Figure 2 This is a physical picture of the X-ray detector prepared in Example 1 of the present invention;

[0031] Figure 3 is an optical microscopic image of the thick film active layer prepared in Example 1 of the present invention;

[0032] Figure 4 is the XRD pattern of the thick film active layer prepared in Example 1 of the present invention;

[0033] Figure 5 1 is a time-current response diagram of the X-ray detector prepared in Example 1 of the present invention at different dose rates;

[0034] Figure 6 This is a physical picture of the X-ray detector prepared in Example 2 of the present invention;

[0035] Figure 7 is an optical microscopic image of the thick film active layer prepared in Example 2 of the present invention;

[0036] Figure 8 is the XRD pattern of the thick film active layer prepared in Example 2 of the present invention;

[0037] Fig. 9 1 is a time-current response diagram of the X-ray detector prepared in Example 2 of the present invention at different dose rates;

[0038] Fig.10 This is a physical picture of the X-ray detector prepared in Example 3 of the present invention;

[0039] Fig.11is an optical microscopic image of the thick film active layer prepared in Example 3 of the present invention;

[0040] Fig.12 is the XRD pattern of the thick film active layer prepared in Example 3 of the present invention;

[0041] Fig.13 3 is a time-current response diagram of the X-ray detector prepared in Example 3 of the present invention at different dose rates;

[0042] Fig.14 This is a physical picture of the X-ray detector prepared in Example 4 of the present invention;

[0043] Fig.15 is an optical microscopic image of the thick film active layer prepared in Example 4 of the present invention;

[0044] Fig.16 is the XRD pattern of the thick film active layer prepared in Example 4 of the present invention;

[0045] Fig.17 Graph showing the time-current response of the X-ray detector prepared in Example 4 of the present invention at different dose rates. DETAILED DESCRIPTION

[0046] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific implementation cases described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] like Figure 1 As shown, the X-ray detector based on ionic liquid-metal halide includes a substrate 1, a thick film active layer 2 and an electrode 3 which are stacked in sequence from bottom to top.

[0048] The method for preparing the X-ray detector comprises the following steps:

[0049] (1) mixing raw materials of a thick film precursor according to a set ratio and heating at a high temperature to obtain a molten thick film precursor;

[0050] The raw materials of the thick film precursor include ionic liquid, metal halide and polymer. The raw materials are mixed according to the molar ratio of ionic liquid: metal halide: polymer = (0.2-4): 1: 1, preferably 2: 1: 1, and heated until the raw materials are melted to form a molten thick film precursor;

[0051] The heating temperature can be adjusted according to actual needs to achieve melting of the raw materials, generally 150°C to 170°C, and is not specifically limited here;

[0052] In a specific implementation, the cation in the ionic liquid can be imidazole, piperidine, phosphide, amino acid, sulfide, aromatic sulfonate, etc., and the anion can be F - , Cl - Br - ,I - 、AsO4 3- 、AsO3 3- , BO3 3- BrO3 - BrO - 、CO3 2- 、HCO3 - 、ClO3 - 、ClO4 - 、ClO2 - , ClO - 、CrO4 2- 、Cr2O7 2- 、NO3 - 、NO2 - PO4 3- 、HPO3 2- 、HPO4 2 -H2PO4 - 、SO4 2- 、S2O3 2- 、SO3 2- 、SiO4 4- 、SiO3 2- 、AlSiO4 - 、C2H3O2 - 、HCO2 - 、C2O4 2- 、HC2O4 - 、SCN - 、OCN - 、C(CN)3 - 、BF4 - 、BH4 - PF6 - , CN - CF3SO3 - 、CH3COO - NH2 -etc.; the ionic liquid preferably adopts any one of imidazole halide compounds, imidazole pseudohalide compounds, piperidine imide compounds, and imidazole trifluoromethanesulfonate compounds, such as 1-butyl 3-methylimidazolium iodide, ethyl tributylphosphine bis(trifluoromethanesulfonyl)imide, 1-hydroxyethyl-3-methylimidazolium chloride, 1-propyl-3-methylimidazolium chloride, 1-propyl-3-methylimidazolium bromide, 1-butyl 3-methylimidazolium tetrafluoroborate, 1-ethyl 3-methylimidazolium tetrafluoroborate, 1-ethyl 3- Methyl imidazolium iodide, 1-butyl-2,3-dimethyl imidazolium chloride, 1-methyl 3-propyl imidazolium iodide, 1-hexyl 3-methyl imidazolium bromide, 1-octyl 3-methyl imidazolium bromide; 1-butyl-3-methyl imidazolium bromide, 1-butyl-1-methylpiperidinium bis(trifluoromethanesulfonyl)imide, 1-propyl-1-methyl imidazolium iodide, 1-butyl-3-methyl imidazolium trifluoromethanesulfonate, etc. are selected as examples in the following embodiments, but are not limited to these materials, and other ionic liquids not listed are also applicable;

[0053] The metal halide may be any metal halide permitted in the art, and the cation in the metal halide may be selected from Pb 2+ 、Bi 3+ , Fe 3+ , Fe 2+ 、Co 2+ 、In 3+ 、In + , K + , Cs + , Rb + 、Te 4+ ,Ge 2+ , Ca 2+ , Ba 2+ , Sr 2+ , Hg 2+ 、Cd 2+ , Pt 2+ 、Zn 2+ , Sb 3 + Sn 2+ Sn 4+ , Mn 2+ , Cu 2+ , Cu + ,La 3+ 、Eu 2+ 、Eu 3+ , Tb 3+ ; Anions can be selected from halogen ions or pseudohalogen ions, such as F - , Cl - Br - ,I - , CN - 、SCN - 、C(CN)3- , BF 4- ; PbBr2, BiI3, PbI2, ZnBr2, etc. are selected as examples in the following embodiments, but are not limited to these materials, and other metal halides not listed are also applicable;

[0054] The polymer may be any polymer permitted in the art, including but not limited to polylactic acid, polyacrylic acid, polyetherimide, polymethyl methacrylate, polyvinyl carbazole, polyether ketone, polycaprolactone, polybutylene adipate, polyacrylaldehyde, polyvinyl pyrrolidone, polyethoxyethyleneimine. In the following embodiments, polylactic acid PLA, polyvinyl carbazole PVK, polyethoxyethyleneimine PEIE, polyvinyl pyrrolidone PVP, etc. are selected as examples, but are not limited to these materials, and other polymers not listed are also applicable;

[0055] An organic solvent may also be added to the raw materials of the thick film precursor, and the molar ratio of the organic solvent to the ionic liquid is 1. The organic solvent may be any organic solvent permitted in the art, including but not limited to at least one of amide solvents, hydrazide solvents, alcohol solvents, ester solvents, sulfone solvents, sulfoxide solvents, ketone solvents, nitrile solvents or tetrahydrofuran. In the following embodiments, dimethyl sulfoxide DMSO, N,N-dimethylformamide DMF, etc. are selected as examples, but are not limited to these materials. Other organic solvents not listed are also applicable.

[0056] (2) preheating the substrate to a set temperature, and then coating the molten thick film precursor on the surface of the substrate;

[0057] The substrate is placed on a hot plate at 90°C to 180°C for preheating, and then the molten thick film precursor is evenly spread on the substrate by coating;

[0058] Cooling to a target temperature of 30°C to 80°C at a cooling rate of 4.5°C / h to 5.5°C / h to obtain a thick active layer uniformly dispersed and solidified on the surface of the substrate, wherein the thick active layer is completely combined with the substrate;

[0059] The preheating temperature, the cooling rate and the cooling target temperature adopt the above numerical ranges, which can be adjusted according to the raw materials of the thick film precursor. For example, the preheating temperature can be 120°C, 130°C, 150°C; the cooling rate can be 4.5°C / h, 5°C / h, 5.5°C / h; the cooling target temperature can be 30°C, 50°C, 65°C, 80°C, but are not limited to the listed values. Other values ​​not listed in the numerical range are also applicable.

[0060] The present invention avoids the pores generated during the volatilization of thick film precursors and solvents by melting and cooling and solidifying, thereby improving the quality of the thick film active layer;

[0061] The substrate adopts a substrate material permitted in the art, including but not limited to a printed circuit board, quartz glass, indium tin oxide glass, and fluorine-doped tin oxide glass. Quartz glass and indium tin oxide glass are selected as examples in the following embodiments, but are not limited to these materials. Other substrate materials not listed are also applicable.

[0062] (3) depositing an electrode on the thick film active layer to prepare an X-ray detector;

[0063] Using vacuum evaporation technology, a planar conductive electrode is deposited on the thick film active layer, and finally an ionic liquid-metal halide based X-ray detector is produced;

[0064] The electrodes are made of conductive electrode materials permitted in the art, including but not limited to gold, silver, platinum, copper, aluminum, indium tin oxide, fluorine-doped tin oxide, carbon-based, and conductive polymer electrode materials. In the following embodiments, copper and gold are selected as examples, but are not limited to these materials. Other conductive electrode materials not listed are also applicable.

[0065] Example 1

[0066] The preparation method of the X-ray detector based on ionic liquid-metal halide comprises the following steps:

[0067] (1) 1-butyl-3-methylimidazolium bromide, bismuth iodide BiI3, and polylactic acid PLA are mixed in a molar ratio of 2:1:1, and then heated to 170° C. to obtain a molten thick film precursor;

[0068] (2) placing a quartz glass substrate on a 150°C hot plate for preheating; taking 50 μL of the molten thick film precursor, and evenly spreading it on a 1.5 cm×1.5 cm quartz glass substrate by coating, heating and keeping at 150°C during the coating process, and cooling from 150°C to 65°C at a rate of 5°C / h after the coating is completed. After a certain period of time, the thick film precursor is evenly dispersed and solidified and completely combined with the substrate to obtain a thick film active layer with a thickness of about 0.168 μm;

[0069] (3) Using vacuum evaporation technology, a planar gold electrode is deposited on the surface of the thick film active layer, and finally an ionic liquid-metal halide based X-ray detector is produced.

[0070] The schematic diagram of the structure of the X-ray detector prepared in this embodiment is as follows: Figure 1 As shown, the actual Figure 2 shown.

[0071] The optical microscopy image of the thick film active layer in this embodiment is as follows Figure 3 As shown, XRD pattern is as Figure 4As shown, the XRD pattern shows that the material of the thick film active layer has no additional signals of other crystalline impurities; the optical microscopy image also shows that the thick film active layer has high-quality crystallinity.

[0072] The X-ray detector prepared in this embodiment was placed in a test bench of a shielding box for relevant photoelectric performance tests. The time-current response diagrams at different dose rates are shown in FIG. Figure 5 As shown, under 1V bias, the X-ray detector is 9.3nGy air s -1 Up to 269.8 nGy air s -1 The different dose rates between the two have good responsiveness, which can achieve low-dose detection. Under 1V bias, the dark current is about 0.8pA. When the dose rate reaches 269.8nGy air s -1 When the photocurrent reaches 9pA, it can be seen that the X-ray detector prepared in this embodiment has a sensitive current response, indicating that the high-quality thick film formed by the ionic liquid-metal halide in this embodiment has excellent photoelectric properties.

[0073] Example 2

[0074] The preparation method of the X-ray detector based on ionic liquid-metal halide comprises the following steps:

[0075] (1) mixing the ionic liquid 1-butyl-1-methylpiperidinium bis(trifluoromethanesulfonyl)imide salt, the metal halide PbBr2, and the polymer PVK in a molar ratio of 2:1:1, adding the solvent DMSO, the molar ratio of DMSO to the ionic liquid being 1:1, and heating the mixture to 170° C. to obtain a molten thick film precursor;

[0076] (2) placing an indium tin oxide glass substrate on a 150°C hot plate for preheating; taking 50 μL of the molten thick film precursor, evenly spreading it on a 1.5 cm×1.5 cm indium tin oxide glass substrate by coating, continuously heating and keeping the temperature at 150°C during the coating process, and cooling to 65°C at a rate of 5°C / h after the coating is completed. After a certain period of time, the thick film precursor is evenly dispersed and solidified and completely combined with the substrate to obtain a thick film active layer with a thickness of about 0.132 μm;

[0077] (3) Using vacuum evaporation technology, a planar copper electrode is deposited on the thick film active layer, and finally an ionic liquid-metal halide based X-ray detector is produced.

[0078] The schematic diagram of the structure of the X-ray detector prepared in this embodiment is as follows: Figure 1 As shown, the actual Figure 6 shown.

[0079] The optical microscopy image of the thick film active layer in this embodiment is as follows Figure 7 As shown, XRD pattern is as Figure 8 As shown, the XRD pattern shows that the material of the thick film active layer has no additional signals of other crystalline impurities; the optical microscopy image also shows that the thick film active layer has high-quality crystallinity.

[0080] The X-ray detector prepared in this embodiment was placed in a test bench of a shielding box for relevant photoelectric performance tests. The time-current response diagrams at different dose rates are shown in FIG. Fig. 9 As shown, under 1V bias, the X-ray detector is 9.3nGy air s -1 Up to 269.8 nGy air s -1 The different dose rates between the two have good responsiveness, which can achieve low-dose detection. Under 1V bias, the dark current is about 0.8pA. When the dose rate reaches 269.8nGy air s -1 When the photocurrent reaches 11pA, it can be seen that the X-ray detector prepared in this embodiment has a sensitive current response, indicating that the high-quality thick film formed by the ionic liquid-metal halide in this embodiment has excellent photoelectric properties.

[0081] Example 3

[0082] The preparation method of the X-ray detector based on ionic liquid-metal halide comprises the following steps:

[0083] (1) mixing the ionic liquid 1-propyl-1-methylimidazolium iodide, the metal halide PbI2, and the polymer PEIE in a molar ratio of 2:1:1, adding the solvent DMF, the molar ratio of DMF to the ionic liquid being 1:1, and heating the mixture to 120° C. to obtain a molten thick film precursor;

[0084] (2) Preheating a fluorine-doped tin oxide glass substrate on a 120°C hot plate; taking 50 μL of the molten thick film precursor, evenly spreading it on a 1.5 cm×1.5 cm fluorine-doped tin oxide glass substrate by coating, heating and maintaining at 120°C during the coating process, cooling to 30°C at a rate of 5.5°C / h after coating, and after a certain period of time, the thick film precursor is evenly dispersed and solidified and completely combined with the substrate to obtain a thick film active layer with a thickness of about 0.1 μm;

[0085] (3) Using vacuum evaporation technology, a planar copper electrode is deposited on the thick film active layer, and finally an ionic liquid-metal halide based X-ray detector is produced.

[0086] The schematic diagram of the structure of the X-ray detector prepared in this embodiment is as follows: Figure 1 As shown, the actual Fig.10shown.

[0087] The optical microscopy image of the thick film active layer in this embodiment is as follows Fig.11 As shown, XRD pattern is as Fig.12 As shown, the XRD pattern shows that the material of the thick film active layer has no additional signals of other crystalline impurities; the optical microscopy image also shows that the thick film active layer has high-quality crystallinity.

[0088] The X-ray detector prepared in this embodiment was placed in a test bench of a shielding box for relevant photoelectric performance tests. The time-current response diagrams at different dose rates are shown in FIG. Fig.13 As shown, under 1V bias, the X-ray detector is 9.3nGy air s -1 Up to 269.8 nGy air s -1 The different dose rates between the two have good responsiveness, achieving low-dose detection. Under 1V bias, the dark current is about 1.3pA, and when the dose rate reaches 269.8nGy air s -1 When the photocurrent reaches 14.3 pA, it can be seen that the X-ray detector prepared in this embodiment has a sensitive current response, indicating that the high-quality thick film formed by the ionic liquid-metal halide in this embodiment has excellent photoelectric properties.

[0089] Example 4

[0090] The preparation method of the X-ray detector based on ionic liquid-metal halide comprises the following steps:

[0091] (1) mixing ionic liquid 1-butyl-3-methylimidazolium trifluoromethanesulfonate, metal halide ZnBr2, and polymer PVP in a molar ratio of 2:1:1, adding solvent DMSO, and heating to raise the temperature to 130° C. to obtain a molten thick film precursor;

[0092] (2) placing an indium tin oxide glass substrate on a 150°C hot plate for preheating; taking 50 μL of the molten thick film precursor, evenly spreading it on a 1.5 cm×1.5 cm indium tin oxide glass substrate by coating, continuously heating and keeping at 130°C during the coating process, and cooling to 50°C at a rate of 4.5°C / h after coating. After a certain period of time, the thick film precursor is evenly dispersed and solidified and completely combined with the substrate to obtain a thick film active layer with a thickness of about 0.100 μm;

[0093] (3) Using vacuum evaporation technology, a planar copper electrode is deposited on the thick film active layer, and finally an ionic liquid-metal halide based X-ray detector is produced.

[0094] The schematic diagram of the structure of the X-ray detector prepared in this embodiment is as follows: Figure 1As shown, the actual Fig.14 shown.

[0095] The optical microscopy image of the thick film active layer in this embodiment is as follows Fig.15 As shown, XRD pattern is as Fig.16 As shown, the XRD pattern shows that the material of the thick film active layer has no additional signals of other crystalline impurities; the optical microscopy image also shows that the thick film active layer has high-quality crystallinity.

[0096] The X-ray detector prepared in this embodiment was placed in a test bench of a shielding box for relevant photoelectric performance tests. The time-current response diagrams at different dose rates are shown in FIG. Fig.17 As shown, under 1V bias, the X-ray detector is 9.3nGy air s -1 Up to 269.8 nGy air s -1 The different dose rates between the two have good responsiveness, which can achieve low-dose detection. Under 1V bias, the dark current is about 1.5pA, and when the dose rate reaches 269.8nGy air s -1 When the photocurrent reaches 16pA, it can be seen that the X-ray detector prepared in this embodiment has a sensitive current response, indicating that the high-quality thick film formed by the ionic liquid-metal halide in this embodiment has excellent photoelectric properties.

[0097] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. X-ray detectors based on ionic liquids and metal halides, It is characterized in that The X-ray detector comprises a substrate, a thick film active layer and an electrode stacked in sequence from bottom to top; The molten thick film precursor is coated on a substrate preheated at a high temperature, and a thick film active layer is obtained after cooling; The raw materials of the thick film precursor include ionic liquid, metal halide and polymer; The ionic liquid is any one of an imidazole halide compound, an imidazole pseudo-halide compound, a piperidine imide salt compound, and an imidazole trifluoromethanesulfonate compound.

2. The ionic liquid-metal halide based X-ray detector according to claim 1, It is characterized in that The raw materials of the thick film precursor also include an organic solvent.

3. The ionic liquid-metal halide based X-ray detector according to claim 2, It is characterized in that The organic solvent is selected from at least one of amide solvents, hydrazide solvents, alcohol solvents, ester solvents, sulfone solvents, sulfoxide solvents, ketone solvents, nitrile solvents or tetrahydrofuran.

4. Preparation method of X-ray detector based on ionic liquid-metal halide, It is characterized in that The preparation method is used to prepare the ionic liquid-metal halide based X-ray detector according to any one of claims 1 to 3, and the preparation method comprises the following steps: The raw materials of the thick film precursor are mixed in a set ratio, and heated at a high temperature to obtain a molten thick film precursor; Preheating the substrate to a set temperature, and then coating the molten thick film precursor on the surface of the substrate; Cooling to the target temperature at a set cooling rate to obtain a thick active layer uniformly dispersed and solidified on the surface of the substrate; Finally, an electrode is deposited on the thick film active layer to prepare an X-ray detector; The raw materials of the thick film precursor include ionic liquid, metal halide and polymer.

5. The method for preparing the X-ray detector based on ionic liquid-metal halide according to claim 4, It is characterized in that The ionic liquid is any one of an imidazole halide compound, an imidazole pseudo-halide compound, a piperidine imide salt compound, and an imidazole trifluoromethanesulfonate compound.

6. The method for preparing the X-ray detector based on ionic liquid-metal halide according to claim 4, It is characterized in that The set temperature is 90°C to 180°C; the cooling rate is 4.5°C / h to 5.5°C / h; and the target temperature is 30°C to 80°C.

7. The method for preparing an ionic liquid-metal halide X-ray detector according to claim 4, It is characterized in that An organic solvent is also added to the raw materials of the thick film precursor, and the organic solvent is selected from at least one of amides, hydrazides, alcohols, esters, sulfones, sulfoxides, ketones, nitrile solvents or tetrahydrofuran.

8. The method for preparing an ionic liquid-metal halide X-ray detector according to claim 4, It is characterized in that The molar ratio of the ionic liquid, the metal halide and the polymer is (0.2-4):1:

1.

9. The method for preparing an ionic liquid-metal halide X-ray detector according to claim 7, It is characterized in that The molar ratio of the ionic liquid to the organic solvent is 1:1.

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