Light-emitting panel, preparation method thereof and display device

Abstract

The embodiment of the invention provides a light-emitting panel, a preparation method thereof and a display device, relates to the technical field of display, and is used for improving the bonding yield of a light-emitting device. The light-emitting panel comprises a first substrate, a second substrate, a driving circuit layer, a plurality of bonding pad pairs, a plurality of light-emitting devices, a plurality of bonding parts and frame sealing glue, wherein the second substrate and the first substrate are oppositely arranged; at least one of the first substrate and the second substrate may be deformed. The driving circuit layer is arranged on the side, close to the second substrate, of the first substrate. And the plurality of bonding pad pairs are arranged on one side, close to the second substrate, of the driving circuit layer and are electrically connected with the driving circuit layer. The light-emitting device is arranged on the side, close to the first substrate, of the second substrate. The bonding parts are connected with the bonding pads and the corresponding light-emitting devices. The frame sealing glue is positioned between the first substrate and the second substrate and is used for connecting the first substrate and the second substrate so as to define a cavity; air pressure inside the cavity is lower than air pressure outside the cavity. The present disclosure is used for displaying images.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting panel and a preparation method thereof, and a display device. Background Art

[0002] As an important component of display devices, light-emitting devices are widely used in the display field. Among them, light-emitting devices such as sub-millimeter light-emitting diodes (Mini Light Emitting Diode, referred to as Mini LED) and micro light-emitting diodes (Micro Light Emitting Diode, referred to as Micro LED) have attracted widespread attention and applications due to their many advantages such as self-luminescence, high efficiency, high brightness, high reliability, energy saving and fast response speed. Summary of the invention

[0003] The purpose of the embodiments of the present disclosure is to provide a light-emitting panel and a method for manufacturing the same, and a display device, so as to improve the bonding yield of light-emitting devices.

[0004] To achieve the above objectives, the embodiments of the present disclosure provide the following technical solutions:

[0005] On the one hand, a light-emitting panel is provided. The light-emitting panel includes a first substrate, a second substrate, a driving circuit layer, a plurality of pad pairs, a plurality of light-emitting devices, a plurality of bonding parts and a sealing glue, wherein the second substrate is arranged opposite to the first substrate; at least one of the first substrate and the second substrate can be deformed. The driving circuit layer is arranged on a side of the first substrate close to the second substrate. A plurality of pad pairs are arranged on a side of the driving circuit layer close to the second substrate and are electrically connected to the driving circuit layer; the pad pairs include two pads. A plurality of light-emitting devices are arranged on a side of the second substrate close to the first substrate; the plurality of light-emitting devices are arranged corresponding to the plurality of pad pairs, respectively. The bonding part is located between the pad and the light-emitting device corresponding thereto, and connects the pad and the light-emitting device corresponding thereto. The sealing glue is located between the first substrate and the second substrate, and connects the first substrate and the second substrate to enclose a cavity; the air pressure inside the cavity is lower than the air pressure outside the cavity.

[0006] In the above-mentioned light-emitting panel, since the air pressure in the cavity is lower than the air pressure outside the cavity, the first substrate and the second substrate are subjected to pressure, and at least one of them is deformed, that is, the average spacing between the first substrate and the second substrate is reduced, so that the light-emitting device and the pad are close to each other. Since the bonding portion is located between the light-emitting device and the pad, when the bonding portion contacts both the light-emitting device and the pad, the bonding portion can be heated, so that the bonding portion can be in a molten state, and then the light-emitting device is bonded to the pad through the bonding portion, thereby completing the bonding.

[0007] Since different pads are arranged at different heights, the portion of the first substrate and / or the second substrate corresponding to the higher pads will be slightly deformed, so that the higher pads can be bonded to the light-emitting device. The portion of the first substrate and / or the second substrate corresponding to the lower pads will be greatly deformed, so that the lower pads can be bonded to the light-emitting device. That is, the higher pads and the lower pads can be bonded to the light-emitting device with the same pressure, so that the occurrence of problems such as solder leaks and cold solder joints can be avoided, thereby ensuring the bonding yield of the light-emitting device.

[0008] In some embodiments, the interior of the cavity is in a vacuum setting.

[0009] In some embodiments, along a thickness direction perpendicular to the light emitting panel, there is a positive correlation between the size of the frame sealant and the area of ​​the light emitting surface of the light emitting panel.

[0010] In some embodiments, the material of the first substrate includes glass, and the thickness of the first substrate ranges from 0.1 mm to 0.4 mm; or, the material of the first substrate includes polyimide. And / or, the material of the second substrate includes glass, and the thickness of the second substrate ranges from 0.1 mm to 0.4 mm; or, the material of the second substrate includes transparent polyimide.

[0011] In some embodiments, there is a negative correlation between the thickness of at least one of the first substrate and the second substrate and the distribution density of the plurality of light-emitting devices.

[0012] In some embodiments, the material of the bonding portion includes at least one of tin and indium.

[0013] In some embodiments, the light emitting panel further includes a dimming structure, and the dimming structure is disposed on a side of the second substrate away from the first substrate.

[0014] In some embodiments, the light emitting panel includes a first light shielding layer, which is disposed on a side of the second substrate close to the first substrate; the first light shielding layer has a plurality of openings, and the plurality of light emitting devices are respectively located in the plurality of openings.

[0015] On the other hand, a method for preparing a light-emitting panel is provided. The preparation method includes: providing a first substrate. Making a driving circuit layer on the first substrate. Making a pad pair on a side of the driving circuit layer away from the first substrate, the pad pair being electrically connected to the driving circuit layer, and the pad pair including two pads. Providing a second substrate. Fixing a light-emitting device on the second substrate. Making a bonding portion on the pad or the light-emitting device. Flipping the second substrate so that a plurality of the light-emitting devices are aligned with a plurality of the pads, respectively. Setting a frame sealant between the first substrate and the second substrate. In a vacuum bonding system, the first substrate and the second substrate are boxed to form a panel box. The panel box is heated, and the air pressure outside the panel box is increased.

[0016] In some embodiments, the material of the first substrate includes polyimide; before the drive circuit layer is fabricated on the first substrate, the preparation method further includes: providing a first support substrate, arranging the first support substrate on the side of the first substrate away from the drive circuit layer to fabricate the first support substrate; after the first substrate and the second substrate are aligned in a vacuum bonding system to form a panel box, the preparation method further includes: using a peeling technique to peel the first support substrate from the first substrate. And / or, the material of the second substrate includes transparent polyimide; before the light-emitting device is fabricated on the second substrate, the preparation method further includes: providing a second support substrate, arranging the second support substrate on the side of the second substrate away from the light-emitting device to fabricate the second support substrate; after the first substrate and the second substrate are aligned in a vacuum bonding system to form a panel box, the preparation method further includes: using a peeling technique to peel the second support substrate from the second substrate.

[0017] In some embodiments, along the thickness direction of the light-emitting panel, the size of the frame sealant arranged between the first substrate and the second substrate is equal to the sum of the average size of the plurality of pads, the size of the light-emitting device corresponding to the pad, the average size of the plurality of bonding portions, and the size of the driving circuit layer.

[0018] In some embodiments, fixing the light-emitting device on the second substrate further comprises: fixing an elastic stamp on the second substrate; and fixing the light-emitting device on a side of the elastic stamp away from the second substrate.

[0019] In some embodiments, along the thickness direction of the light-emitting panel, the size of the frame sealant provided between the first substrate and the second substrate is equal to the sum of the average size of the plurality of solder pads, the size of the light-emitting device corresponding to the solder pad, the average size of the plurality of bonding portions, the size of the elastic stamp corresponding to the solder pad, and the size of the driving circuit layer.

[0020] The method for preparing the above-mentioned light-emitting panel has the same beneficial effects as those achieved by the light-emitting panel provided above, and will not be described in detail here.

[0021] In another aspect, a display device is provided, the display device comprising a light-emitting panel, an array substrate and a color filter substrate, the light-emitting panel being the light-emitting panel described in the above embodiment. The array substrate is located on the light-emitting side of the light-emitting panel. The color filter substrate is located on a side of the array substrate away from the light-emitting panel.

[0022] The above-mentioned display device has the same structure and beneficial technical effects as the light-emitting panels provided in some of the above-mentioned embodiments, which will not be described in detail here.

[0023] On the other hand, a display device is provided, comprising a housing and a light emitting panel, wherein the light emitting panel is the light emitting panel described in any one of the above embodiments, and the light emitting panel is disposed in the housing.

[0024] The above-mentioned display device has the same structure and beneficial technical effects as the light-emitting panels provided in some of the above-mentioned embodiments, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present disclosure, the actual process of the method, etc.

[0026] Figure 1 is a structural diagram of a display device according to some embodiments;

[0027] Figure 2 is a structural diagram of another display device according to some embodiments;

[0028] Figure 3 is a structural diagram of a light emitting panel according to some embodiments;

[0029] Figure 4 is a structural diagram of another light emitting panel according to some embodiments;

[0030] Figure 5 is a structural diagram of another light-emitting panel according to some embodiments;

[0031] Figure 6 is a structural diagram of another light-emitting panel according to some embodiments;

[0032] Figure 7 is a structural diagram of another light-emitting panel according to some embodiments;

[0033] Figure 8 is a structural diagram of another light-emitting panel according to some embodiments;

[0034] Fig. 9 is a structural diagram of another light-emitting panel according to some embodiments;

[0035] Fig.10 is a structural diagram of another light-emitting panel according to some embodiments;

[0036] Fig.11 is a structural diagram of another light-emitting panel according to some embodiments;

[0037] Fig.12 is a structural diagram of another light-emitting panel according to some embodiments;

[0038] Fig.13 is a structural diagram of another light-emitting panel according to some embodiments;

[0039] Fig.14 is a top view of a light emitting panel according to some embodiments;

[0040] Fig.15 is a structural diagram of another light-emitting panel according to some embodiments;

[0041] Fig.16 is a flow chart of a method for preparing a light-emitting panel according to some embodiments;

[0042] Figures 17A to 17S It is a structural diagram corresponding to each step in the method for preparing a light-emitting panel according to some embodiments. DETAILED DESCRIPTION

[0043] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0044] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "some embodiments", "exemplary embodiments", "examples", etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0045] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0046] When describing some embodiments, the term "connection" and its derivative expressions may be used. The term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0047] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0048] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0049] As used herein, "equal" includes the stated situation and the situation similar to the stated situation, the range of which is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, the difference between the two being equal is less than or equal to 5% of either one.

[0050] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0051] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0052] With the development of display technology, various display devices have appeared in life, and the display devices can provide people with various display services to meet people's needs.

[0053] Based on this, the present disclosure provides a display device, which can be any device that displays whether it is moving (e.g., video) or fixed (e.g., still image) and whether it is text or image. More specifically, it is expected that the embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal digital assistants (PDAs), handheld or portable computers, global positioning system (GPS) receivers / navigators, cameras, moving picture experts group 4 (MP4) video players, video cameras, game consoles, watches, clocks, calculators, television monitors, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controls and / or displays, displays of camera views (e.g., displays of rear-view cameras in vehicles), electronic photos, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0054] In some embodiments, the display device may be an LCD (Liquid Crystal Display) device.

[0055] In this case, if Figure 1As shown, the display device 1 may include a light emitting panel 11, an array substrate 12, a color filter substrate 13 and a liquid crystal layer 14. The array substrate 12 is located on the light emitting side of the light emitting panel 11. The color filter substrate 13 is located on the side of the array substrate 12 away from the light emitting panel 11. The liquid crystal layer 14 is located between the color filter substrate 13 and the array substrate 12.

[0056] It is understandable that the above-mentioned light emitting panel 11 can also be called a backlight module, which is used to provide backlight. For example, the backlight provided by the light emitting panel 11 can be white light or blue light, which is not specifically limited in the present disclosure. Among them, the light emitting side of the light emitting panel 11 refers to the side from which the light emitting panel 11 emits light.

[0057] Exemplarily, the array substrate 12 may include a plurality of transistors and a plurality of pixel electrodes, and the plurality of transistors may be arranged in an array shape. The plurality of transistors are electrically connected to the plurality of pixel electrodes in a one-to-one correspondence, and the transistors transmit pixel voltages to corresponding pixel electrodes.

[0058] Exemplarily, the color film substrate 13 may include a variety of color filters. For example, when the backlight provided by the light-emitting panel 11 is white light, the color filters may include a red filter, a green filter, a blue filter, and the like. For example, a red filter may only allow red light in the incident light to pass through, a green filter may only allow green light in the incident light to pass through, and a blue filter may only allow blue light in the incident light to pass through. For another example, when the backlight provided by the light-emitting panel 11 is blue light, the color filters may also include a red filter, a green filter, and the like.

[0059] Exemplarily, the display device 1 further includes a common electrode. The common electrode can receive a common voltage. The common electrode can be disposed in the color filter substrate 13, or in the array substrate 12, which is not specifically limited in the present disclosure.

[0060] Exemplarily, the liquid crystal layer 14 includes a plurality of liquid crystal molecules. For example, an electric field may be formed between the pixel electrode and the common electrode, and the liquid crystal molecules may be deflected under the action of the electric field.

[0061] Through the above arrangement, when the display device 1 is working, the light emitting panel 11 can emit light, and then the light will pass through the array substrate 12, the liquid crystal layer 14 and the color film substrate 13 in sequence, and finally realize the picture display.

[0062] Specifically, when light is incident on the liquid crystal layer 14, the liquid crystal molecules will be deflected under the action of the electric field formed between the pixel electrode and the common electrode, thereby changing the amount of light passing through the liquid crystal molecules, so that the light emitted through the liquid crystal molecules reaches a preset brightness. Then, when the light passes through the color filter substrate 13, it will pass through filters of different colors and emit light of different colors, such as red light, blue light, green light, etc., and the light of various colors cooperates to achieve display.

[0063] In some other embodiments, the display device 1 may also be a LED (Light Emitting Diode) display device.

[0064] In this case, if Figure 2 As shown, the display device 1 may include a housing 15 and a light emitting panel 11, and the light emitting panel 11 is disposed in the housing 15. The light emitting panel 11 itself can emit light to realize picture display.

[0065] The housing 15 should have a certain strength so as to provide support and protection for the light emitting panel 11. For example, the material of the housing 15 may include plastic.

[0066] In some embodiments, Figure 3 As shown, the light emitting panel 11 includes a first substrate 111, a second substrate 112, a driving circuit layer 113 and a plurality of light emitting devices 115. The first substrate 111 and the second substrate 112 are arranged opposite to each other, and the driving circuit layer 113 is arranged on a side of the first substrate 111 close to the second substrate 112. The light emitting device 115 is arranged on a side of the second substrate 112 close to the first substrate 111, and the light emitting device 115 is electrically connected to the driving circuit layer 113.

[0067] It can be understood that the first substrate 111 can provide support for the driving circuit layer 113 .

[0068] Exemplarily, the material of the first substrate 111 may include glass, which has high hardness and good light transmittance. Alternatively, the material of the first substrate 111 may also include PI (Polyimide). PI has the advantages of high temperature resistance and good flexibility. Exemplarily, the material of the second substrate 112 may include glass. Alternatively, the material of the second substrate 112 may also include CPI (Colorless Polyimide). CPI has the advantages of high temperature resistance, good flexibility and good light transmittance.

[0069] For example, the sizes of the first substrate 111 and the second substrate 112 can be selected according to actual conditions. For example, the length of the first substrate 111 is 470 mm and the width is 370 mm; or the length of the first substrate 111 is 1850 mm and the width is 1500 mm. Alternatively, any other suitable size can be selected and manufactured according to actual needs.

[0070] Among them, the length of the first substrate 111 can be consistent with the length of the second substrate 112, or they can have a certain deviation; the width of the first substrate 111 can be consistent with the width of the second substrate 112, or they can have a certain deviation, but this deviation should not affect the normal function of the light-emitting panel 11.

[0071] It can be understood that the above-mentioned driving circuit layer 113 includes various types, which are specifically related to the driving method of the light-emitting device 115 and can be selected and set according to actual needs.

[0072] In some examples, such as Figure 4 As shown, the driving mode of the light emitting device 115 is active driving. Accordingly, the driving circuit layer 113 is an AM (Active Matrix, active driving) circuit layer.

[0073] Specifically, when the driving circuit layer 113 is an AM circuit layer, as shown in FIG. Figure 4 As shown, the driving circuit layer 113 includes a plurality of pixel driving circuits 1130. The structure of the pixel driving circuit 1130 includes a variety of structures, which can be selected and set according to actual needs. For example, the structure of the pixel driving circuit 1130 includes but is not limited to "3T1C", "6T1C", "7T1C", "6T2C" or "7T2C" structures. Here, "T" represents a transistor, and the number in front of "T" represents the number of transistors, and "C" represents a storage capacitor, and the number in front of "C" represents the number of storage capacitors.

[0074] in, Figure 4 A thin film transistor 1131 (TFT) represents a pixel driving circuit 1130. The driving circuit layer 113 further includes a plurality of common voltage signal lines 1132. The plurality of pixel driving circuits 1130 may be arranged as a plurality of pixel driving circuit columns, and the plurality of pixel driving circuit columns and the plurality of common voltage signal lines may be alternately arranged.

[0075] The thin film transistor 1131 may be a low temperature polysilicon (LTPS) thin film transistor, or may be an oxide thin film transistor.

[0076] For example, Figure 4 As shown, the driving circuit layer 113 further includes a first buffer layer 1133, and the first buffer layer 1133 is disposed between the first substrate 111 and the pixel driving circuit 1130. The material of the first buffer layer 1133 may include any suitable material such as SiO2 (silicon dioxide).

[0077] By providing the first buffer layer 1133 , when the first substrate 111 is impacted, the first buffer layer 1133 can slow down the transfer of force, thereby providing protection for the pixel driving circuit 1130 .

[0078] In some other examples, the driving mode of the light emitting device 115 is passive driving. Accordingly, the driving circuit layer 113 may also be a PM (Passive Matrix, passive driving) circuit layer.

[0079] Specifically, when the driving circuit layer 113 is a PM circuit layer, as shown in FIG. Figure 5 As shown, the driving circuit layer 113 includes a conductive layer 1134, the conductive layer 1134 includes a plurality of signal lines 11341, and the conductive layer 1134 is disposed on a side of the first substrate 111 close to the second substrate 112. Of course, the driving circuit layer 113 may also include multiple conductive layers 1134, and different types of signal lines 11341 are disposed in different conductive layers 1134, which is not limited in the embodiments of the present disclosure.

[0080] For example, Figure 5 As shown, the driving circuit layer 113 further includes a second buffer layer 1135 , which is disposed between the first substrate 111 and the conductive layer 1134 . The second buffer layer 1135 provides buffering for the conductive layer 1134 , so as to prevent the conductive layer 1134 from being damaged when the first substrate 111 is subjected to external force.

[0081] The material of the second buffer layer 1135 may include any suitable material such as SiO 2 .

[0082] Exemplarily, the light emitting device 115 may be a Micro LED (Micro Light Emitting Diode) or a Mini LED (Mini Light Emitting Diode).

[0083] Exemplarily, the structure of the light emitting device 115 may be any one of a face-up structure, a vertical structure or a flip-down structure. For ease of description, the following description takes the flip-down structure of the light emitting device 115 as an example.

[0084] In addition, for the convenience of subsequent description, the following description is made by taking the driving circuit layer 113 as an AM circuit layer as an example.

[0085] In some embodiments, Figure 6 As shown, the light emitting panel 11 further includes a plurality of pad pairs 114 . The pad pairs 114 are disposed on a side of the driving circuit layer 113 close to the second substrate 112 and are electrically connected to the driving circuit layer 113 . The pad pairs 114 include two pads 1141 .

[0086] Among them, the material of the pad 1141 may include one or more of copper (Cu), nickel (Ni), titanium (Ti), gold (Au), platinum (Pt), aluminum (Al), and silver (Ag), for example, copper, nickel, copper-nickel alloy, copper-aluminum alloy, copper-nickel-platinum alloy, etc.

[0087] It can be understood that the two pads 1141 included in the pad pair 114 can be respectively called a first pad (for example, electrically connected to the pixel driving circuit and used to transmit a driving signal) and a second pad (for example, electrically connected to the common voltage signal line and used to transmit a common voltage signal).

[0088] The plurality of light emitting devices 115 are arranged corresponding to the plurality of pad pairs 114, and the light emitting devices 115 are electrically connected to the corresponding pad pairs 114. For example, the plurality of light emitting devices 115 correspond to the plurality of pad pairs 114 one by one, the anode pin of the light emitting device 115 is electrically connected to the first pad of the corresponding pad pair 114, and the cathode pin of the light emitting device 115 is electrically connected to the second pad of the corresponding pad pair 114.

[0089] In some embodiments, Figure 6 As shown, the above-mentioned light-emitting panel 11 also includes multiple bonding parts 116, which correspond one-to-one to multiple solder pads 1141. Each bonding part 116 is located between each solder pad 1141 and the corresponding light-emitting device 115, and connects the solder pad 1141 and the corresponding light-emitting device 115.

[0090] Exemplarily, the material of the bonding portion 116 includes at least one of tin (Sn) and indium (In), for example, the material of the bonding portion 116 may include tin or indium, or the material of the bonding portion 116 may also include a tin-indium alloy. The specific selection may be made according to actual conditions.

[0091] When the bonding portion 116 is made of the above-mentioned material, under the action of high temperature, the soldering pad 1141 can undergo a eutectic reaction with the anode pin and the cathode pin of the light-emitting device 115 to bond the soldering pad 1141 and the light-emitting device 115 together, thereby achieving an electrical connection between the soldering pad 1141 and the light-emitting device 115, and then achieving an electrical connection between the driving circuit layer 113 and the light-emitting device 115. In this way, the driving circuit layer 113 can drive the light-emitting device 115 to emit light.

[0092] Since the light-emitting device 115 is generally grown on a sapphire substrate, before bonding the light-emitting device 115 to the pad 1141, it is first necessary to use mass transfer technology to transfer the light-emitting device 115 located on the sapphire substrate to the second substrate 112, and then make the second substrate 112 face the first substrate 111, and finally use wafer bonding technology to make the anode pins and cathode pins of multiple light-emitting devices 115 respectively bonded to the pads 1141 in the corresponding multiple pad pairs 114 on the first substrate 111.

[0093] However, due to the different wiring conditions at different positions in the driving circuit layer 113, different pads 1141 located on the driving circuit layer 113 are arranged at different heights. For example, based on the plane where the first substrate 111 is located, the height of the lowest pad 1141 may be only 75% of the height of the highest pad 1141. In this way, when multiple light-emitting devices 115 are bonded to multiple pads 1141 at the same time, there will be a problem that the lower pad 1141 cannot contact the anode pin and the cathode pin of the light-emitting device 115. In this way, the lower pad 1141 cannot complete bonding with the corresponding light-emitting device 115, thereby resulting in a low bonding yield.

[0094] In addition, when bonding the light emitting device 115 to the pad 1141, the size of the wafer alignment bonding machine currently used is about 6 inches at one time. If a light emitting panel 11 with a larger size is to be bonded, multiple bondings are required, which results in low bonding efficiency.

[0095] Based on this, Figure 7 As shown, at least one of the first substrate 111 and the second substrate 112 may be deformed ( Figure 7 The light emitting panel 11 further includes a sealant 117. The sealant 117 is located between the first substrate 111 and the second substrate 112, and connects the first substrate 111 and the second substrate 112 to form a cavity 118. The air pressure inside the cavity 118 is lower than the air pressure outside the cavity 118.

[0096] Since the pressure inside the cavity 118 is lower than the pressure outside the cavity 118, the first substrate 111 and the second substrate 112 are subjected to the pressure given by the external atmosphere, and at least one of the first substrate 111 and the second substrate 112 is deformed, that is, the average distance between the first substrate 111 and the second substrate 112 is reduced, so that the light-emitting device 115 and the pad 1141 are close to each other. Since the bonding portion 116 is located between the light-emitting device 115 and the pad 1141, when the bonding portion 116 contacts both the light-emitting device 115 and the pad 1141, the bonding portion 116 can be heated to make the bonding portion 116 in a molten state, so that the light-emitting device 115 is bonded to the pad 1141 through the bonding portion 116, thereby completing the bonding.

[0097] Since different pads 1141 are arranged at different heights, the first substrate 111 and / or the portion of the second substrate 112 corresponding to the higher pad pair 114 will be slightly deformed, so that the higher pad 1141 can be bonded to the light-emitting device 115. The first substrate 111 and / or the portion of the second substrate 112 corresponding to the lower pad pair 114 will be greatly deformed, so that the lower pad 1141 can be bonded to the light-emitting device 115. That is, the higher pad 1141 and the lower pad 1141 can be bonded to the light-emitting device 115 by the same pressure, which can avoid problems such as solder leaks and cold solder joints. Thus, the bonding yield is guaranteed.

[0098] At the same time, since the cavity 118 is a sealed environment, external moisture can be prevented from entering the cavity 118 , thereby preventing moisture from corroding the pad 1141 and the driving circuit layer 113 , etc., thereby extending the service life of the light-emitting panel 11 .

[0099] In addition, since the light-emitting panel 11 in some embodiments of the present application utilizes external atmosphere to form pressure on the first substrate 111 and the second substrate 112 during bonding to complete the bonding, and the sizes of the first substrate 111 and the second substrate 112 are consistent with the sizes of the light-emitting panel 11, when preparing a larger-sized light-emitting panel 11, the bonding can be completed at one time, and the bonding efficiency is higher than the current wafer bonding technology.

[0100] For example, Figure 8 FIG. 1 shows an external structure in which the first substrate 111 of the light-emitting panel 11 is deformed, while the second substrate 112 is not deformed. In this case, the second substrate 112 is not deformed, so that the light-emitting device 115 located on the second substrate 112 is not offset, so that it can emit light better.

[0101] For example, Fig. 9, the external structure of the first substrate 111 in the light emitting panel 11 is shown to be not deformed, but the second substrate 112 is deformed. In this case, the first substrate 111 is not deformed, so that the driving circuit layer 113 located on the first substrate 111 is not deformed, thereby ensuring its electrical performance.

[0102] In order to allow at least one of the first substrate 111 and the second substrate 112 to be deformed, the first substrate 111 and / or the second substrate 112 should be made of a suitable material and have a suitable thickness.

[0103] Exemplarily, the material of the first substrate 111 may include glass, and the thickness of the first substrate 111 is in the range of 0.1 mm to 0.4 mm. In this case, the first substrate 111 has good deformation capability and can avoid being broken when deformed by external pressure.

[0104] For example, the thickness of the first substrate 111 may be 0.1 mm, 0.11 mm, 0.2 mm, 0.21 mm, 0.3 mm, 0.35 mm, or 0.4 mm.

[0105] On this basis, the thickness of the first substrate 111 may be in the range of 0.1 mm to 0.2 mm. Within this range, the deformability and structural reliability of the first substrate 111 can be guaranteed to the greatest extent.

[0106] Alternatively, the material of the first substrate 111 may also include PI, which has good flexibility and can make the first substrate 111 have good rollability.

[0107] When the material of the first substrate 111 includes PI, the thickness of the first substrate 111 may be 5 μm to 30 μm, so that the first substrate 111 can have good flexibility and can be sufficiently deformed when subjected to a certain force.

[0108] For example, the thickness of the first substrate 111 may be 5 μm, 6 μm, 10 μm, 20 μm, 25 μm or 30 μm, etc. Of course, the thickness of the first substrate 111 may also be any other appropriate value.

[0109] Exemplarily, the material of the second substrate 112 includes glass, and the thickness of the second substrate 112 ranges from 0.1 mm to 0.4 mm. At this time, the second substrate 112 has a high deformation capacity and can avoid being broken when deformed by external pressure.

[0110] For example, the thickness of the second substrate 112 may be 0.1 mm, 0.13 mm, 0.25 mm, 0.27 mm, 0.32 mm, 0.37 mm, or 0.4 mm.

[0111] On this basis, the thickness of the second substrate 112 may be in the range of 0.1 mm to 0.2 mm. Within this range, the deformability and structural reliability of the second substrate 112 can be guaranteed to the greatest extent.

[0112] Alternatively, the material of the second substrate 112 includes CPI. CPI firstly does not affect light emission, and secondly has good flexibility, so that the second substrate 112 can have good rollability.

[0113] When the material of the second substrate 112 includes CPI, the thickness of the second substrate 112 may be 5 μm to 30 μm, so that the second substrate 112 can have good flexibility and can be sufficiently deformed when subjected to a certain force.

[0114] For example, the thickness of the second substrate 112 may be 5 μm, 6 μm, 11 μm, 23 μm, 25 μm or 30 μm, etc. Of course, the thickness of the second substrate 112 may also be any other appropriate value.

[0115] It is understood that the thickness of the first substrate 111 and the second substrate 112 may be the same. For example, the thickness of the first substrate 111 and the second substrate 112 are both 0.15 mm. Alternatively, the thickness of the first substrate 111 and the second substrate 112 are both 0.19 mm.

[0116] Alternatively, the thicknesses of the first substrate 111 and the second substrate 112 may be different.

[0117] Exemplarily, the thickness of the first substrate 111 is greater than the thickness of the second substrate 112. Thus, under the same pressure, the first substrate 111 can be deformed less, thereby making the drive circuit layer 113 on the first substrate 111 less deformed, thereby ensuring the electrical performance of the drive circuit layer 113.

[0118] For example, the thickness of the first substrate 111 is 0.16 mm, and the thickness of the second substrate 112 is 0.14 mm. Alternatively, the thickness of the first substrate 111 is 0.15 mm, and the thickness of the second substrate 112 is 0.13 mm.

[0119] Exemplarily, the thickness of the second substrate 112 is greater than that of the first substrate 111. This can reduce the deformation of the second substrate 112, thereby reducing the displacement of the light emitting device 115 on the second substrate 112, so that it can emit light better.

[0120] For example, the thickness of the second substrate 112 is 0.17 mm, while the thickness of the first substrate 111 is 0.13 mm. Alternatively, the thickness of the second substrate 112 is 0.16 mm, while the thickness of the first substrate 111 is 0.13 mm.

[0121] It can be understood that the sealant 117 surrounds the first substrate 111 or the second substrate 112 in a circumferential direction to form a closed space between the first substrate 111 and the second substrate 112, and the closed space is the cavity 118. The driving circuit layer 113, the pad pair 114, the light emitting device 115 and the bonding portion 116 are all disposed in the cavity 118.

[0122] In some embodiments, the interior of the cavity 118 is set to be vacuum. In this way, when the air pressure outside the cavity 118 is a standard atmospheric pressure, that is, when the first substrate 111 and the second substrate 112 are placed in a normal atmospheric environment, the condition that the air pressure inside the cavity 118 is less than the air pressure outside the cavity 118 can be met. At this time, the external atmosphere will form pressure on the first substrate 111 and the second substrate 112, and the pressure will squeeze the first substrate 111 and the second substrate 112, so that the first substrate 111 and / or the second substrate 112 are deformed, so that the high and low pads 1141 can be bonded to the corresponding light-emitting device 115, thereby improving the bonding yield between the pads 1141 and the light-emitting device 115. In this way, there is no need to deliberately apply external force to the first substrate 111 and / or the second substrate 112.

[0123] In addition, if the air pressure outside the cavity 118 is a standard atmospheric pressure, then the force acting on the first substrate 111 and the second substrate 112 will be less than or equal to the force acting on them by a standard atmospheric pressure. In this way, the pressure acting on the driving circuit layer 113 will be very small, thereby preventing the thin film transistor 1131 in the driving circuit layer 113 from being damaged, thereby avoiding affecting its threshold voltage and ensuring its electrical performance.

[0124] At the same time, since the interior of the cavity 118 is a vacuum environment, the oxygen content therein is low or no oxygen, which can prevent oxygen from corroding the pad 1141 and the driving circuit layer 113, etc., thereby extending the service life of the light-emitting panel 11.

[0125] It is understandable that the higher the vacuum degree inside the cavity 118, the better. Because when the vacuum degree inside the cavity 118 is higher, the pressure actually transmitted to the bonding surface between the light-emitting device 115 and the pad 1141 will be greater, so that the pad 1141 and the light-emitting device 115 can be bonded more tightly together to increase the bonding strength between the two, so as to better bond the light-emitting device 115 to the pad 1141 and ensure a stable electrical connection between the two.

[0126] Of course, when the interior of the cavity 118 is set to a vacuum, the external air pressure may also be greater than one standard atmospheric pressure, or less than one standard atmospheric pressure, as long as the air pressure inside the cavity 118 is less than the air pressure outside the cavity 118 .

[0127] In some embodiments, there is a negative correlation between the thickness of at least one of the first substrate 111 and the second substrate 112 and the distribution density of the plurality of light emitting devices 115 .

[0128] It can be understood that there is a negative correlation between the thickness of at least one of the first substrate 111 and the second substrate 112 and the distribution density of the plurality of light-emitting devices 115, which means that: the thickness of at least one of the first substrate 111 and the second substrate 112 decreases as the distribution density of the plurality of light-emitting devices 115 increases; or, the thickness of at least one of the first substrate 111 and the second substrate 112 increases as the distribution density of the plurality of light-emitting devices 115 decreases.

[0129] The negative correlation may be a negative correlation at a fixed ratio, or may be a negative correlation at a non-fixed ratio.

[0130] It can be understood that when the first substrate 111 and the second substrate 112 are subjected to pressure, the greater the distribution density of the light-emitting devices 115, the smaller the force exerted by a single light-emitting device 115 on the first substrate 111 and the second substrate 112. In this way, the thickness of the first substrate 111 and / or the second substrate 112 can be made thinner, thereby reducing the thickness of the light-emitting panel 11, so that the light-emitting panel 11 is lighter and thinner as a whole.

[0131] If the distribution density of the light-emitting devices 115 is small, the force exerted by a single light-emitting device 115 on the first substrate 111 and the second substrate 112 will be greater. In this way, the thickness of the first substrate 111 and / or the second substrate 112 is made thicker to avoid the first substrate 111 and the second substrate 112 from being broken.

[0132] In some embodiments, along the thickness direction perpendicular to the light emitting panel 11, the size of the sealant 117 is positively correlated with the area of ​​the light emitting surface of the light emitting panel 11. The light emitting surface of the light emitting panel 11 refers to the side of the light emitting panel 11 that emits light.

[0133] In the thickness direction perpendicular to the light emitting panel 11 , the size of the frame sealant 117 may be between 1 mm and 4 mm.

[0134] For example, the size of the frame sealant 117 may be 1 mm, 1.5 mm, 2.5 mm, 3.5 mm, or 4 mm.

[0135] It can be understood that the positive correlation between the size of the frame sealant 117 and the area of ​​the light emitting surface of the light emitting panel 11 means that: along the thickness direction perpendicular to the light emitting panel 11, the size of the frame sealant 117 increases as the area of ​​the light emitting surface of the light emitting panel 11 increases. Alternatively, along the thickness direction perpendicular to the light emitting panel 11, the size of the frame sealant 117 decreases as the area of ​​the light emitting surface of the light emitting panel 11 decreases.

[0136] The positive correlation may be a positive correlation in a fixed ratio, or a positive correlation in a non-fixed ratio.

[0137] In this way, when the light-emitting surface of the light-emitting panel 11 has a large area, even if the size of the sealant 117 is relatively thick along the thickness direction perpendicular to the light-emitting panel 11, the black border formed by the sealant 117 will not appear too wide because the area of ​​the vertical projection of the sealant 117 on the first substrate 111 accounts for a small proportion of the area of ​​the light-emitting surface of the light-emitting panel 11. This ensures the aesthetics of the light-emitting panel 11 and realizes a narrow frame design.

[0138] At the same time, since the size of the frame sealant 117 is larger at this time, the contact area between the frame sealant 117 and the first substrate 111 and the second substrate 112 is larger, which can increase the stability of the connection and sealing between the frame sealant 117 and the first substrate 111, and at the same time, increase the stability of the connection and sealing between the frame sealant 117 and the second substrate 112.

[0139] When the light emitting surface of the light emitting panel 11 has a small area, the size of the frame sealant 117 can be made smaller along the thickness direction perpendicular to the light emitting panel 11 , thereby preventing the black border from being too wide and achieving a narrow frame design.

[0140] In some embodiments, the area of ​​the first substrate 111 is positively correlated with the thickness of the first substrate 111 .

[0141] The positive correlation may be a positive correlation in a fixed ratio, or a positive correlation in a non-fixed ratio.

[0142] When the first substrate 111 is in an environment with a stable atmospheric pressure, the pressure on the first substrate 111 is positively correlated with the force-bearing area of ​​the first substrate 111, that is, the larger the area of ​​the first substrate 111, the greater the pressure on the first substrate 111, so the first substrate 111 is thicker to ensure the structural strength of the first substrate 111. Similarly, the smaller the area of ​​the first substrate 111, the smaller the pressure on the first substrate 111, so the first substrate 111 is thinner, thereby ensuring the lightness and thinness of the light-emitting panel 11.

[0143] In some embodiments, the area of ​​the second substrate 112 is positively correlated with the thickness of the second substrate 112 .

[0144] The positive correlation may be a positive correlation in a fixed ratio, or a positive correlation in a non-fixed ratio.

[0145] When the second substrate 112 is in an environment with a stable atmospheric pressure, the pressure on the second substrate 112 is positively correlated with the force-bearing area of ​​the second substrate 112, that is, the larger the area of ​​the second substrate 112, the greater the pressure on the second substrate 112, so the second substrate 112 is thicker to ensure the structural strength of the second substrate 112. Similarly, the smaller the area of ​​the second substrate 112, the smaller the pressure on the second substrate 112, so the second substrate 112 is thinner, thereby ensuring the lightness and thinness of the light-emitting panel 11.

[0146] In some embodiments, Fig.10 As shown, the light emitting panel 11 further includes a first light shielding layer 119, which is disposed on a side of the second substrate 112 close to the first substrate 111. The first light shielding layer 119 has a plurality of openings, and the plurality of light emitting devices 115 are respectively disposed in the plurality of openings. By providing the first light shielding layer 119, the first light shielding layer 119 can absorb the light emitted by the light emitting device 115 to its surroundings, so as to prevent the occurrence of color mixing and pixel cross-color phenomena.

[0147] The first light shielding layer 119 may include a black matrix (BM).

[0148] In some embodiments, Fig.11 As shown, the light emitting panel 11 further includes a dimming structure 120, which is disposed on a side of the second substrate 112 away from the first substrate 111. The dimming structure 120 is disposed on the second substrate 112 to adjust the light output, for example, the angle of the light output, the brightness of the light output, etc.

[0149] For example, Fig.12 As shown, the dimming structure 120 may include a plurality of lens structures 122, and the plurality of lens structures 122 correspond one to one with the plurality of light emitting devices 115, and the lens structures 122 are arranged opposite to the corresponding light emitting devices 115. The angle of light emission is adjusted by the lens structure 122, so that the viewing angle can be adjusted to increase the viewing angle when needed.

[0150] Or, if Fig.13 As shown, the dimming structure 120 may also include a grating structure 121. The grating structure 121 may adjust the angle of light emission, thereby adjusting the viewing angle to increase the viewing angle when needed.

[0151] For example, Fig.12 , Fig.13 , Fig.14 As shown, the dimming structure 120 may further include a second light shielding layer 123, which is disposed on a side of the second substrate 112 away from the first substrate 111. The second light shielding layer 123 has a plurality of through holes, which correspond one-to-one to the plurality of light emitting devices 115, so that the through holes are directly opposite to the corresponding light emitting devices 115.

[0152] By providing the second light shielding layer 123 , the second light shielding layer 123 can absorb the light emitted by the light emitting device 115 to its surroundings, so as to prevent the occurrence of color mixing and pixel cross-color phenomenon.

[0153] The second light shielding layer 123 may include a black matrix (BM).

[0154] It can be understood that the first shading layer 119, lens structure 122, grating structure 121 and second shading layer 123 can be arranged according to actual needs, and the light-emitting panel 11 in the present application can include one, any two, any three or four of the above four.

[0155] In some embodiments, the light emitting panel 11 may further include a plurality of sensors, which are disposed on the second substrate 112. The sensors are disposed to control the light emission of the light emitting device 115, etc.

[0156] In some embodiments, Fig.15 As shown, the light emitting panel 11 may further include a plurality of spacers 124 . The spacers 124 are disposed between the first light shielding layer 119 and the driving circuit layer 113 , and one end of the spacers 124 is connected to the driving circuit layer 113 .

[0157] By providing the spacers 124 , the spacers 124 are used to provide certain support for the first light shielding layer 119 and the second substrate 112 , so as to prevent a portion of the second substrate 112 where the light emitting device 115 is not provided from being greatly deformed.

[0158] It can be understood that the setting of the spacer 124 cannot affect the bonding between the light-emitting device 115 and the pad 1141 , and cannot affect the setting of the vacuum environment inside the cavity 118 .

[0159] The present disclosure also provides a method for preparing the light emitting panel 11, such as Fig.16 As shown, the preparation method includes: S100~S1000.

[0160] S100: Fig.17A As shown, a first substrate 111 is provided.

[0161] For example, the material of the first substrate 111 may include glass, and the thickness of the first substrate 111 is between 0.1 mm and 0.4 mm. Further, the thickness of the first substrate 111 may be between 0.1 mm and 0.2 mm.

[0162] Alternatively, the material of the first substrate 111 may also include PI.

[0163] S200: Fig. 17B As shown, a driving circuit layer 113 is manufactured on the first substrate 111 .

[0164] Exemplarily, the driving circuit layer 113 may be an AM circuit layer, or may be a PM circuit layer. Please refer to the above related description for details, which will not be repeated here.

[0165] S300: Fig. 17C As shown, a pad pair 114 is formed on a side of the driving circuit layer 113 away from the first substrate 111 . The pad pair 114 is electrically connected to the driving circuit layer 113 , and the pad pair 114 includes two pads 1141 .

[0166] The number and height of the pads 1141 can be set as needed.

[0167] Exemplarily, the pad 1141 may be formed on the driving circuit layer 113 by using an etching process. For example, the etching may be dry etching or wet etching.

[0168] Exemplarily, the material of the pad 1141 may include one or more of copper (Cu), nickel (Ni), titanium (Ti), gold (Au), platinum (Pt), aluminum (Al), and silver (Ag), that is, copper, nickel, copper-nickel alloy, copper-aluminum alloy, copper-nickel-platinum alloy, and the like.

[0169] S400: Fig.17D As shown, a second substrate 112 is provided.

[0170] For example, the material of the second substrate 112 may include glass, and the thickness of the second substrate 112 is between 0.1 mm and 0.4 mm. Further, the thickness of the second substrate 112 may be between 0.1 mm and 0.2 mm.

[0171] Alternatively, the material of the second substrate 112 may include CPI.

[0172] For example, the first substrate 111 and the second substrate 112 have the same thickness and are made of the same material, so that when the first substrate 111 and the second substrate 112 are subjected to the same pressure, the first substrate 111 and the second substrate 112 may undergo the same deformation, thereby better completing the bonding.

[0173] S500: Fig.17E As shown, the light emitting device 115 is fixed on the second substrate 112 .

[0174] Exemplarily, the light emitting device 115 may be a Micro LED or a Mini LED.

[0175] It is understandable that the number of light-emitting devices 115 is generally multiple, and can be specifically set as needed. Multiple light-emitting devices 115 can be arranged in an array on the second substrate 112, or multiple light-emitting devices can also be set on the second substrate 112 in a random arrangement.

[0176] For example, when the light emitting device 115 is fixed, the lamp bead portion of the light emitting device 115 (ie, the portion excluding the anode pin and the cathode pin of the light emitting device 115 ) may be fixed to the second substrate 112 .

[0177] Since the light-emitting device 115 is generally grown on a sapphire substrate, in order to transfer the light-emitting device 115 on the sapphire substrate to the second substrate 112, a mass transfer technology is generally used. For example, the mass transfer technology can be a pick-up and release technology of an elastic stamp, which uses the van der Waals force to absorb the light-emitting device 115 from the sapphire substrate and then transfers it to the second substrate 112 for release, thereby transferring the light-emitting device 115 on the sapphire substrate to the second substrate 112.

[0178] In this case, in order to fix the light emitting device 115 on the second substrate 112, as shown in FIG. Fig.17F As shown, fixing the light emitting device 115 on the second substrate 112 includes S510 to S520.

[0179] S510: Fix the elastic stamp 125 on the second substrate 112.

[0180] S520 : fixing the light emitting device 115 on the side of the elastic stamp 125 away from the second substrate 112 .

[0181] By providing the elastic stamp 125 , the light emitting device 115 can be adsorbed by the elastic stamp 125 , so that the light emitting device 115 is fixed on the second substrate 112 .

[0182] The elastic stamp 125 may be disposed on the second substrate 112 by injection molding.

[0183] Exemplarily, in order to fix the light emitting device 115 on the second substrate 112, the light emitting device 115 may be directly fixed on the second substrate 112. For example, the light emitting device 115 may be bonded to the second substrate 112 using optical glue or the like. Of course, the light emitting device 115 may also be fixed using other suitable methods.

[0184] Exemplarily, the mass transfer technology may also be laser dissociation technology, fluid transfer technology, etc. When the above technology is used, there is no need to use an elastic stamp.

[0185] S600: Figure 17G As shown, a bonding portion 116 is formed on the pad 1141; or, as shown Fig.17H As shown, a bonding portion 116 is formed on the light emitting device 115 .

[0186] It can be understood that when the bonding portion 116 is disposed on the light emitting device 115 , the bonding portion 116 can be disposed on the anode pin and the cathode pin of the light emitting device 115 .

[0187] Exemplarily, the material of the bonding portion 116 includes at least one of tin (Sn) and indium (In). For example, the material of the bonding portion 116 may include tin (Sn) or indium (In). Alternatively, the material of the bonding portion 116 may also include a tin alloy or an indium alloy. The specific selection may be made according to actual conditions.

[0188] Exemplarily, when setting the bonding portion 116 on the pad 1141 or the light-emitting device 115, the bonding portion 116 can be first heated by a bonding instrument, and then the bonding portion 116 is put into a molten state, and then the bonding portion 116 is placed on the pad 1141 or the light-emitting device 115. After the bonding portion 116 is cooled, the bonding portion 116 can be fixed together with the pad 1141 or the light-emitting device 115, thereby realizing the production of the bonding portion 116.

[0189] For the convenience of description, the following description is given by assuming that the bonding portion 116 is manufactured on the pad 1141 .

[0190] S700: Fig.17I As shown, the second substrate 112 is turned over so that the plurality of light emitting devices 115 are respectively opposite to the plurality of pad pairs 114 .

[0191] Specifically, the anode pin of the light emitting device 115 is aligned with one of the pads 1141 in the pad pair 114 , and the cathode pin of the light emitting device 115 is aligned with the other pad 1141 in the pad pair 114 .

[0192] S800: Fig.17J and Figure 17KAs shown, a sealing glue 117 is disposed between the first substrate 111 and the second substrate 112 .

[0193] For example, in order to set the sealant 117 between the first substrate 111 and the second substrate 112, as shown in FIG. Fig.17J As shown, the sealant 117 may be first bonded to the first substrate 111. Alternatively, as shown in FIG. Figure 17K As shown, the frame sealant 117 may also be bonded onto the second substrate 112 .

[0194] For example, the sealant 117 may be bonded to the one with higher hardness between the first substrate 111 and the second substrate 112, so that when the sealant 117 is arranged, the first substrate 111 or the second substrate 112 can provide sufficient support for the sealant 117. This can facilitate the arrangement and bonding of the sealant 117.

[0195] Exemplarily, when the hardness of the first substrate 111 and the second substrate 112 are equal, the frame sealing glue 117 may be disposed on either the first substrate 111 or the second substrate 112 .

[0196] S900: Figure 17L As shown, the first substrate 111 and the second substrate 112 are assembled into a box in a vacuum assembly system (VAS) to form a panel box.

[0197] It will be appreciated that the cavity 118 is located within the panel box.

[0198] Illustratively, when the frame-sealing glue 117 is bonded to the first substrate 111, in order to achieve the box-matching of the first substrate 111 and the second substrate 112, the first substrate 111 and the second substrate 112 can be brought close to each other. When the frame-sealing glue 117 is in contact with the second substrate 112, the second substrate 112 and the frame-sealing glue 117 are also bonded together by thermal curing or ultraviolet light curing.

[0199] Similarly, when the sealing glue 117 is bonded to the second substrate 112, in order to achieve the box alignment of the first substrate 111 and the second substrate 112, the first substrate 111 and the second substrate 112 can be brought close to each other. When the sealing glue 117 is in contact with the first substrate 111, the first substrate 111 and the sealing glue 117 are also bonded together by thermal curing or ultraviolet light curing.

[0200] For example, in order to put the vacuum bonding system in a vacuum state, a molecular pump may be used to evacuate the vacuum bonding system.

[0201] S1000: Fig.17M As shown, the panel box is heated and the air pressure outside the panel box is increased.

[0202] It is understood that when the panel box is heated, the heating temperature should be such that the bonding portion 116 is in a molten state. The temperature setting should be set according to the material of the bonding portion 116.

[0203] Exemplarily, the panel box may be placed in a heating device having a heating cavity for heating.

[0204] For example, when the material of the bonding part 116 includes tin (Sn), the temperature in the heating chamber may be about 250° C. Alternatively, when the material of the bonding part 116 includes indium (In), the temperature in the heating chamber may be about 160° C.

[0205] Since the bonding portion 116 is in a molten state, and since the first substrate 111 and / or the second substrate 112 are under pressure at this time, Fig.17M As shown, the first substrate 111 and / or the second substrate 112 may be deformed to press the bonding portion 116 , so that the pad 1141 can be bonded to the light emitting device 115 through the bonding portion 116 .

[0206] During the bonding process, since the portion of the first substrate 111 and / or the second substrate 112 corresponding to the higher portion of the pad 1141 undergoes a smaller deformation, the higher pad 1141 can be bonded to the light-emitting device 115. The portion of the first substrate 111 and / or the second substrate 112 corresponding to the lower portion of the pad 1141 undergoes a larger deformation, so that the lower pad 1141 can be bonded to the light-emitting device 115. That is, the higher portion of the pad 1141 and the lower portion of the pad 1141 can be bonded to the light-emitting device 115 with the same pressure, so that the occurrence of problems such as solder leaks and cold solder joints can be avoided, thereby ensuring the bonding yield of the light-emitting device 115.

[0207] In addition, during bonding, the pressure generated by the external atmosphere is applied to the first substrate 111 and the second substrate 112 to complete the bonding, and the size of the first substrate 111 and the second substrate 112 is consistent with the size of the light-emitting panel 11. Therefore, when preparing a larger size of the light-emitting panel 11, for example, 100 inches, the bonding can be completed at one time, and compared with the current wafer bonding technology, the bonding efficiency is higher.

[0208] It can be understood that S400 to S500 can also be performed before S100 to S300, that is, the second substrate 112 can be provided first, and the light-emitting device 115 on the second substrate 112 can be manufactured. Then the first substrate 111 is provided, and the driving circuit layer 113 and the pad pair 114 on the first substrate 111 can be manufactured. Alternatively, S400 to S500 can also be performed simultaneously with S100 to S300.

[0209] In some embodiments, when the material of the first substrate 111 includes polyimide, in order to facilitate the arrangement of the driving circuit layer 113, before the driving circuit layer 113 is formed on the first substrate 111, as shown in FIG. Fig.17N As shown, the above preparation method also includes: S190.

[0210] S190 : providing a first supporting substrate 126 , and disposing the first supporting substrate 126 on a side of the first substrate 111 away from the driving circuit layer 113 .

[0211] It is understandable that the hardness of the first support substrate 126 should be greater than the hardness of the first substrate 111 , so that the first support substrate 126 can provide support for the first substrate 111 to ensure that the driving circuit layer 113 can be successfully manufactured on the first substrate 111 .

[0212] By way of example, the material of the first support substrate 126 may include glass, or may include any other suitable material.

[0213] In this case, the first substrate 111 and the second substrate 112 are assembled into a box in a vacuum bonding system to form a panel box. Fig.17O , Figure 17P As shown, the preparation method provided by the present disclosure also includes: S910.

[0214] S910: Using a peeling technique, peel the first support substrate 126 from the first substrate 111. In this way, when the light emitting device 115 and the pad 1141 are bonded, external force can directly act on the first substrate 111, thereby ensuring that the first substrate 111 can be deformed, and then the light emitting device 115 can be bonded to the pad 1141.

[0215] Exemplarily, the stripping technique may be a laser lift-off technique (Laser Lift-off, LLO), or any other suitable stripping technique.

[0216] In some embodiments, when the material of the second substrate 112 includes transparent polyimide, in order to facilitate the arrangement of the light emitting device 115, before the light emitting device 115 is fixed on the second substrate 112, as shown in FIG. Figure 17Q As shown, the preparation method provided by the present disclosure also includes: S490.

[0217] S490 : providing a second support substrate 127 , and disposing the second support substrate 127 on a side of the second substrate 112 away from the light emitting device 115 .

[0218] It is understandable that the hardness of the second support substrate 127 should be greater than the hardness of the second substrate 112 , so that the second support substrate 127 can provide support for the second substrate 112 to ensure that the light-emitting device 115 can be successfully manufactured on the second substrate 112 .

[0219] By way of example, the material of the second support substrate 127 may include glass, or may include any other suitable material.

[0220] In this case, the first substrate 111 and the second substrate 112 are assembled into a box in a vacuum bonding system to form a panel box. Figure 17R , Figure 17S As shown, the above preparation method also includes: S1200.

[0221] S1200 : using a peeling technique to peel off the second support substrate 127 from the second substrate 112 .

[0222] Exemplarily, the stripping technique may be a laser lift-off technique (Laser Lift-off, LLO), or any other suitable stripping technique.

[0223] In some embodiments, when the light emitting device 115 is fixed on the second substrate 112 by the elastic stamp 125, the size of the sealant 117 provided between the first substrate 111 and the second substrate 112 along the thickness direction of the light emitting panel 11 is equal to the sum of the size of the pad 1141, the size of the light emitting device 115 corresponding to the pad 1141, the average size of the plurality of bonding portions 116, the size of the elastic stamp 125 corresponding to the pad 1141, and the size of the driving circuit layer 113. That is, the height of the sealant 117 is appropriate.

[0224] In this way, when the frame-sealing glue 117 is in contact with both the first substrate 111 and the second substrate 112 (but not cured), the distance between the first substrate 111 and the second substrate 112 can be maintained within an appropriate range, so the larger sum of the height of the pad 1141 and the height of the bonding portion 116 can be reduced from abutting against the light-emitting device 115, thereby avoiding the support force on the light-emitting device 115 and further supporting the second substrate 112, so that the frame-sealing glue 117 can be fully in contact with both the first substrate 111 and the second substrate 112, thereby facilitating the curing of the frame-sealing glue 117 to ensure the stability of the connection between the frame-sealing glue 117 and the first substrate 111 and the second substrate 112.

[0225] At the same time, when the bonding portion 116 is heated for bonding, since the distance between the first substrate 111 and the second substrate 112 is relatively appropriate, that is, the distance of the light-emitting device 115 will not be too far from the lower part of the multiple pads 1141, when at least one of the first substrate 111 and the second substrate 112 has just undergone a small degree of deformation, the light-emitting device 115 can contact the lower part of the pad 1141 through the bonding portion 116 and quickly complete the bonding, so that the deformation of the first substrate 111 and / or the second substrate 112 is avoided. The surface of the light-emitting panel 11 is smooth.

[0226] It can be understood that in order to obtain the average height of multiple bonding portions 116, the height of each bonding portion 116 can be first measured using an optical instrument, and then the number of bonding portions 116 can be measured, and the heights of all bonding portions 116 can be added together to obtain the total height value of the bonding portions 116, and then the total height value of the multiple bonding portions 116 can be divided by the number of bonding portions 116 to obtain the average height of the bonding portions 116.

[0227] Similarly, in order to obtain the average height of multiple pads 1141, the height of each pad 1141 can be first measured using an optical instrument, and then the number of pads 1141 can be measured, and then the heights of all pads 1141 can be added together to obtain the total height value of the multiple pads 1141, and then the total height value of the multiple pads 1141 can be divided by the number of pads 1141 to obtain the average height of pads 1141.

[0228] In other embodiments, when the light-emitting device 115 is directly fixed on the second substrate 112, the size of the frame sealant 117 arranged between the first substrate 111 and the second substrate 112 along the thickness direction of the light-emitting panel 11 is equal to the sum of the size of the pad 1141, the size of the light-emitting device 115 corresponding to the pad 1141, the average size of the multiple bonding portions 116, and the size of the driving circuit layer 113.

[0229] In this way, when the frame-sealing glue 117 is in contact with both the first substrate 111 and the second substrate 112 (but not cured), since the distance between the first substrate 111 and the second substrate 112 is relatively appropriate, the larger sum of the height of the pad 1141 and the height of the bonding portion 116 can be reduced to abut against the light-emitting device 115, thereby avoiding it from generating a supporting force on the light-emitting device 115 and then generating a supporting force on the second substrate 112, so that the frame-sealing glue 117 can be fully in contact with both the first substrate 111 and the second substrate 112, thereby facilitating the curing of the frame-sealing glue 117 to ensure the stability of the connection between the frame-sealing glue 117 and the first substrate 111 and the second substrate 112.

[0230] At the same time, when the bonding portion 116 is heated for bonding, since the distance between the first substrate 111 and the second substrate 112 will not be too far, that is, the distance of the light-emitting device 115 will not be too far from the lower part of the multiple pads 1141, when at least one of the first substrate 111 and the second substrate 112 has just undergone a small degree of deformation, the light-emitting device 115 can contact the lower part of the pad 1141 through the bonding portion 116 and quickly complete the bonding, so that the deformation of the first substrate 111 and / or the second substrate 112 is avoided. The surface of the light-emitting panel 11 is smooth.

[0231] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be thought of by any person skilled in the art within the technical scope disclosed in the present disclosure should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A light-emitting panel, characterized in that: include: a first substrate; A second substrate is arranged opposite to the first substrate; at least one of the first substrate and the second substrate can be deformed; A driving circuit layer is arranged on a side of the first substrate close to the second substrate; A plurality of pad pairs, arranged on a side of the driving circuit layer close to the second substrate and electrically connected to the driving circuit layer; the pad pair includes two pads; A plurality of light-emitting devices are arranged on a side of the second substrate close to the first substrate; the plurality of light-emitting devices are respectively arranged corresponding to the plurality of pad pairs; A plurality of bonding parts, wherein the bonding parts are located between the pads and the light emitting devices corresponding thereto, and connect the pads and the light emitting devices corresponding thereto; The frame sealing glue is located between the first substrate and the second substrate, and connects the first substrate and the second substrate to enclose a cavity; the air pressure inside the cavity is lower than the air pressure outside the cavity.

2. The light emitting panel according to claim 1, characterized in that: The interior of the cavity is in a vacuum setting.

3. The light emitting panel according to claim 1, characterized in that: Along a thickness direction perpendicular to the light emitting panel, there is a positive correlation between the size of the frame sealant and the area of ​​the light emitting surface of the light emitting panel.

4. The light emitting panel according to claim 1, characterized in that: The material of the first substrate includes glass, and the thickness of the first substrate ranges from 0.1 mm to 0.4 mm; or, the material of the first substrate includes polyimide; and / or, The material of the second substrate includes glass, and the thickness of the second substrate ranges from 0.1 mm to 0.4 mm; or, the material of the second substrate includes transparent polyimide.

5. The light emitting panel according to claim 4, characterized in that: There is a negative correlation between the thickness of at least one of the first substrate and the second substrate and the distribution density of the plurality of light-emitting devices.

6. The light emitting panel according to claim 1, characterized in that: The material of the bonding portion includes at least one of tin and indium.

7. The light emitting panel according to any one of claims 1 to 6, characterized in that: The light emitting panel further includes a dimming structure, and the dimming structure is disposed on a side of the second substrate away from the first substrate.

8. The light emitting panel according to any one of claims 1 to 6, characterized in that: The light emitting panel comprises a first light shielding layer, and the first light shielding layer is arranged on a side of the second substrate close to the first substrate; The first light shielding layer has a plurality of openings, and the plurality of light emitting devices are respectively located in the plurality of openings.

9. A method for preparing a light-emitting panel, characterized in that: The preparation method comprises: providing a first substrate; Manufacturing a driving circuit layer on the first substrate; A pad pair is formed on a side of the driving circuit layer away from the first substrate, the pad pair is electrically connected to the driving circuit layer, and the pad pair includes two pads; providing a second substrate; fixing a light emitting device on the second substrate; Making a bonding portion on the pad or the light-emitting device; Turning over the second substrate so that the plurality of light-emitting devices are aligned with the plurality of pads respectively; Disposing a frame sealant between the first substrate and the second substrate; Aligning the first substrate with the second substrate in a vacuum bonding system to form a panel box; The panel box is heated, and the air pressure outside the panel box is increased.

10. The preparation method according to claim 9, characterized in that: The material of the first substrate includes polyimide; before manufacturing the driving circuit layer on the first substrate, the preparation method further includes: Providing a first supporting substrate, and disposing the first supporting substrate on a side of the first substrate away from the driving circuit layer; After the first substrate and the second substrate are aligned in a vacuum bonding system to form a panel box, the preparation method further includes: Using a peeling technique, peeling the first supporting substrate from the first substrate; and / or, The material of the second substrate includes transparent polyimide; before fixing the light-emitting device on the second substrate, the preparation method further includes: Providing a second supporting substrate, and disposing the second supporting substrate on a side of the second substrate away from the light-emitting device; After the first substrate and the second substrate are aligned in a vacuum bonding system to form a panel box, the preparation method further includes: The second supporting substrate is peeled off from the second substrate by using a peeling technique.

11. The preparation method according to claim 9, characterized in that: Along the thickness direction of the light-emitting panel, the size of the frame sealant arranged between the first substrate and the second substrate is equal to the sum of the average size of the plurality of pads, the size of the light-emitting device corresponding to the pad, the average size of the plurality of bonding portions and the size of the driving circuit layer.

12. The preparation method according to claim 9, characterized in that: The step of fixing the light emitting device on the second substrate comprises: fixing an elastic stamp on the second substrate; The light emitting device is fixed on a side of the elastic stamp away from the second substrate.

13. The preparation method according to claim 12, characterized in that: Along the thickness direction of the light-emitting panel, the size of the frame sealing glue arranged between the first substrate and the second substrate is equal to the sum of the average size of the plurality of solder pads, the size of the light-emitting device corresponding to the solder pads, the average size of the plurality of bonding portions, the size of the elastic stamp corresponding to the solder pads, and the size of the driving circuit layer.

14. A display device, characterized in that: include: A light-emitting panel, which is a light-emitting panel as claimed in any one of claims 1 to 8; An array substrate, located at the light emitting side of the light emitting panel; The color filter substrate is located on a side of the array substrate away from the light emitting panel.

15. A display device, characterized in that: include: case; The light emitting panel is the light emitting panel according to any one of claims 1 to 8, and the light emitting panel is arranged in the housing.

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