Photoelectric detector, modulation method and manufacturing method thereof

Abstract

The invention provides a photoelectric detector and a modulation method and a manufacturing method thereof, the photoelectric detector shows synaptic-like characteristics, and the photoelectric detector structurally comprises a semiconductor substrate; the interface layer is located on one surface of the semiconductor substrate; the photosensitive layer is made of a gallium oxide thin film, and the photosensitive layer is located on the surface, away from the semiconductor substrate, of the interface layer; wherein the interface layer is suitable for regulating and controlling an energy band structure between the semiconductor substrate and the photosensitive layer, so that the device shows the rectification characteristics of forward bias closing and reverse bias opening under the condition of no illumination; in response to the stimulation of the solar blind ultraviolet light pulse, the photoelectric detector outputs a photoresponse current for simulating a biological synaptic function under a forward bias voltage; when the stimulation of the solar blind ultraviolet light pulse is removed and under the reverse bias voltage, the photoelectric detector erases the light response current, so that the repeatable operation characteristic of the device is realized.

Description

Technical Field

[0001] At least one embodiment of the present invention relates to the field of neuromorphic computing, and more particularly to a photodetector, a modulation method thereof, and a manufacturing method thereof. Background Art

[0002] Due to the existence of the ozone layer, ultraviolet rays of 200 to 280 nm in solar radiation are difficult to reach the earth's surface, so ultraviolet rays in this band are called solar-blind ultraviolet regions. The background noise of ultraviolet radiation in the solar-blind ultraviolet region is very weak, and the signal of the radiation source can be accurately detected. Therefore, solar-blind ultraviolet detection is widely used in ultraviolet communications, flame sensing, biochemical analysis and other fields. The ultra-wide bandgap semiconductor material gallium oxide is considered to be a very promising solar-blind detection material due to its excellent material properties such as high bandgap width, high breakdown field strength, high absorption coefficient, radiation resistance, and stable chemical properties.

[0003] Traditional solar-blind photoelectric detection systems usually adopt the von Neumann architecture, that is, the separation of sensing, storage and computing. A large amount of redundant information is generated in the process of transmitting data between the computing unit and the storage unit, which not only increases power consumption but also limits the efficiency of the detection system.

[0004] Neuromorphic computing has an information processing method that is different from computing based on the von Neumann architecture. It has the advantages of integrated sensing, storage and computing, and is expected to improve information transmission and computing efficiency, and meet the needs of real-time detection and efficient identification and analysis of complex scenarios. Summary of the invention

[0005] In view of this, in order to solve the technical problem of low efficiency of the above-mentioned photodetector, the present invention proposes a photodetector, a modulation method and a manufacturing method thereof. The device exhibits synaptic characteristics to achieve the technical effect of integrated sensing, storage and computing.

[0006] According to an embodiment of one aspect of the present invention, there is provided a photodetector, comprising: a semiconductor substrate; an interface layer, located on a surface of the semiconductor substrate; and a photosensitive layer, made of a gallium oxide thin film, the photosensitive layer being located on a surface of the interface layer away from the semiconductor substrate; the interface layer being suitable for regulating the energy band structure between the semiconductor substrate and the photosensitive layer, so that in the absence of light, the device exhibits a rectification characteristic of being turned off by a forward bias and turned on by a reverse bias; in response to the stimulation of a day-blind ultraviolet light pulse, under a forward bias, the photodetector outputs a photoresponse current that simulates a biological synaptic function; when the stimulation of the day-blind ultraviolet light pulse is removed and under a reverse bias, the photodetector erases the photoresponse current, thereby achieving a repeatable operation characteristic of the device.

[0007] According to an embodiment of another aspect of the present invention, a modulation method of a photodetector is provided, comprising: applying a forward bias voltage to the photodetector, applying a day-blind ultraviolet light pulse stimulus to the photodetector, and causing the photodetector to output a photoresponse current that simulates a biological synaptic function; and applying a reverse bias voltage to the photodetector, and causing the photodetector to erase the photoresponse current.

[0008] According to an embodiment of another aspect of the present invention, a method for manufacturing a photodetector is provided, comprising: forming an interface layer on a substrate; depositing a photosensitive layer on the interface layer; and depositing a top electrode on the photosensitive layer and depositing a back electrode on a side of the substrate away from the interface layer.

[0009] According to the photodetector provided by the above embodiment of the present invention, an interface layer is formed between the substrate and the photosensitive layer, so that under dark conditions, the light response current of the device is suppressed under forward bias, and the device is turned on under negative bias. A reverse bias can be applied to the device after responding to a day-blind ultraviolet light pulse under forward bias to effectively suppress the sustainable photoconductivity effect (PPC effect), and the device current returns to the initial state, thereby realizing the reset operation of the photodetector, that is, achieving an effect similar to erasing on the response photocurrent, and further realizing continuous repeated operation of the photodetector. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present invention, but are not intended to limit the present invention.

[0011] Figure 1 A cross-sectional schematic diagram of a photodetector provided by an embodiment of the present invention;

[0012] Figure 2 A schematic flow chart of a method for manufacturing a photoelectric detector provided by an embodiment of the present invention;

[0013] Figure 3A to Figure 3D A schematic diagram of a manufacturing process of a photodetector provided by an embodiment of the present invention;

[0014] Figure 4A The IV characteristic curve of the photodetector provided by the embodiment of the present invention;

[0015] Figure 4B The photocurrent response curve of the photodetector provided in the embodiment of the present invention to light pulse stimulation;

[0016] Figure 5 A curve showing a change in the double pulse facilitation index value of the photodetector provided by an embodiment of the present invention under stimulation of multiple light pulses;

[0017] Figure 6The photocurrent response curve of the photodetector provided by the embodiment of the present invention under different light pulse stimulation times; and

[0018] Figure 7 Figures A to C in the figure are photocurrent response curves of the photodetector provided by the embodiment of the present invention to 4-bit light pulse stimulation;

[0019] Description of reference numerals:

[0020] 1- semiconductor substrate;

[0021] 2-interface layer;

[0022] 3-Photosensitive layer;

[0023] 4-top electrode;

[0024] 5-Back electrode. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical scheme and advantages of the present invention more clear, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. However, the present invention can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the invention thorough and complete and fully convey the scope of the present invention to those skilled in the art. In the accompanying drawings, for clarity, the sizes and relative sizes of layers and regions may be exaggerated, and the same reference numerals throughout represent the same elements.

[0026] The terms used herein are only for describing specific embodiments and are not intended to limit the present invention. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0027] In order to realize neuromorphic computing, the development of artificial synaptic devices that simulate synapses is crucial. Photodetectors with synaptic-like functions can perform calculations while receiving signal inputs, and pass simulated signals to subsequent artificial neural networks, improving information transmission and computing efficiency, and meeting the real-time detection and efficient recognition and analysis of complex scenes.

[0028] In the related art, there are two main structures of existing day-blind ultraviolet photodetectors. One is a metal / semiconductor / metal (MSM) structure, whose basic structure includes a photosensitive layer and two electrodes located on the same side of the photosensitive layer; the two electrodes constitute the input / output at both ends, forming a two-terminal structure. However, the MSM photodetector adopts a two-terminal planar device design, which limits the device size and makes it difficult to achieve miniaturization and high-density integration applications. In addition, since the two-terminal MSM photodetector lacks a current control method, it is impossible to achieve an erasing effect similar to the response photocurrent, and the device cannot be repeatedly operated continuously.

[0029] The other type uses a field effect transistor (FET) structure, whose basic structure includes a photosensitive layer, a source and a drain located on the first side of the photosensitive layer, and a gate located on the second side of the photosensitive layer opposite to the first side. The source and drain constitute the input / output at both ends, and the gate serves as the regulating end, forming a three-terminal structure; the gate is generally a back gate. However, the preparation process and working conditions of FET-type photodetectors are relatively complex, and the three terminals need to be operated simultaneously; at the same time, this structure also limits the size of the device, making it difficult to achieve miniaturization and high-density integration applications.

[0030] In view of this, it is necessary to propose a new type of photodetector, its control method and its manufacturing method to address the technical problems that photodetectors in related technologies lack a response current erasure method and are difficult to achieve size miniaturization and integration.

[0031] Figure 1 A cross-sectional schematic diagram of a photodetector provided in an embodiment of the present invention.

[0032] According to an exemplary embodiment of the present invention, the present invention provides a photodetector, referring to Figure 1 As shown, including:

[0033] A semiconductor substrate 1;

[0034] An interface layer 2 is located on a surface of the semiconductor substrate 1; and

[0035] The photosensitive layer 3 is made of a gallium oxide thin film, and the photosensitive layer 3 is located on the surface of the interface layer 2 facing away from the semiconductor substrate 1;

[0036] Among them, the interface layer is suitable for regulating the energy band structure between the semiconductor substrate and the photosensitive layer, so that in the absence of light, the device exhibits a rectifying characteristic of being closed by forward bias and opened by reverse bias;

[0037] In response to the stimulation of a day-blinding ultraviolet light pulse, under forward bias, the photodetector outputs a photoresponse current simulating the function of a biological synapse; when the stimulation of the day-blinding ultraviolet light pulse is removed and under reverse bias, the photodetector erases the photoresponse current.

[0038] According to the photodetector provided by the above embodiment of the present invention, an interface layer is formed between the substrate and the photosensitive layer, so that under dark conditions, the light response current of the device is suppressed under forward bias, and the device is turned on under negative bias. A reverse bias can be applied to the device after responding to a day-blind ultraviolet light pulse under forward bias to effectively suppress the sustainable photoconductivity effect (PPC effect), and the device current returns to the initial state, thereby realizing the reset operation of the photodetector, that is, achieving an effect similar to erasing on the response photocurrent, and further realizing continuous repeated operation of the photodetector.

[0039] According to an embodiment of the present invention, the semiconductor substrate 1 is made of a material with high conductivity, and the semiconductor substrate 1 may be SiC, for example.

[0040] According to the embodiment of the present invention, the gallium oxide material has a photosensitive property and has a good response capability to solar-blind light. The photodetector made of gallium oxide material can respond to the solar-blind ultraviolet light band with a wavelength less than 280nm.

[0041] According to an embodiment of the present invention, the thickness of the gallium oxide film is 100~1000nm, for example, 100nm, 200nm, 500nm, 800nm, 1000nm, but is not limited to the listed values; it should be noted that the transmission depth of day-blind ultraviolet light in the gallium oxide film is limited. If the thickness of the gallium oxide film is too large, for example, greater than 1000nm, the incident light cannot reach the space charge region and the device has no response; if the thickness is too small, the incident light directly reaches the space charge region, which is equivalent to a reduction in the series resistance of the device and an increase in the forward dark current of the device, resulting in a weakened response to day-blind ultraviolet light.

[0042] According to an embodiment of the present invention, the interface layer 2 is made of a high barrier oxide material, and the high barrier oxide includes but is not limited to SiO2, HfO2, MgO, ZnO, Al2O3, ZrO2 and the like.

[0043] According to an embodiment of the present invention, the thickness of the interface layer 2 is 1nm to 10nm, for example, it can be 1nm, 3nm, 5nm, 8nm, 10nm, but it is not limited to the values ​​cited. It should be noted that if the thickness of the interface layer 2 is too large, it is difficult for electrons to tunnel through, resulting in the device being unable to conduct; if the thickness of the interface layer 2 is too small, the suppression effect on the forward dark current is not obvious, resulting in a weakening of the day-blind ultraviolet light response. According to an embodiment of the present invention, the introduction of the interface layer 2 will affect the electron transport of the vertical structure device, and the interface layer 2 has a large potential barrier, which has an inhibitory effect on the dark current of the device.

[0044] According to an embodiment of the present invention, the above-mentioned photodetector further includes: a top electrode 4 located on the photosensitive layer 3 ; and a back electrode 5 located on a surface of the semiconductor substrate 1 away from the interface layer 2 .

[0045] According to the embodiment of the present application, the top electrode 4 is a ring electrode or an ultra-thin film electrode to maximize light transmission. The ultra-thin film electrode can be a transparent conductive film such as SnO2, In2O3, ITO, AZO, etc., with a thickness ranging from 10-200 nm.

[0046] Compared with the photodetector with a planar structure, the photodetector with a vertical structure of the present invention is easier to achieve device miniaturization and integrated application.

[0047] The present invention aims to solve the problem that the current planar two-terminal gallium oxide photodetector lacks a response current erasure method and is difficult to integrate, and proposes a vertical structure that can realize response current erasure and is easy to integrate and miniaturize. By introducing an ultra-thin interface layer on the semiconductor substrate and then depositing a gallium oxide photosensitive layer, a vertical photodetector is finally realized. The present invention can suppress the PPC effect by relying on the voltage reversal of the two-terminal device, thereby reducing the complexity of the photodetector.

[0048] The vertically structured photodetector provided by the embodiment of the present invention can avoid the problems of a planar two-terminal device being unable to erase the light response current and being difficult to operate repeatedly, as well as the difficulty in integrating a planar two-terminal device with a three-terminal device.

[0049] Figure 2 A schematic flow chart of a method for manufacturing a photoelectric detector provided in an embodiment of the present invention.

[0050] Figure 3A to Figure 3D A schematic diagram of a manufacturing process of a photodetector provided in an embodiment of the present invention.

[0051] According to an exemplary embodiment of the present invention, the present invention provides a method for manufacturing a photodetector, referring to Figure 2 , Figure 3A to Figure 3D As shown, it includes: operation S01 to operation S03.

[0052] In operation S01 , an interface layer 2 is formed on a semiconductor substrate 1 .

[0053] According to an embodiment of the present invention, before forming the interface layer 2 on the semiconductor substrate 1, the semiconductor substrate 1 is pretreated to remove impurities such as residual glue and organic matter on the surface of the semiconductor substrate 1. Specifically, the semiconductor substrate to be treated is first immersed in an organic solution (for example, an acetone solution is first used, and then the semiconductor substrate is treated with isopropanol) and placed in an ultrasonic cleaning device for cleaning for several minutes to remove organic matter; secondly, the semiconductor substrate is immersed in a piranha solution (concentrated sulfuric acid and hydrogen peroxide solution are prepared in a ratio of 3:1) for 10 minutes to remove other residual contaminants, and finally the sample is immersed in a hydrofluoric acid solution for 5 minutes to remove surface oxides.

[0054] According to an embodiment of the present invention, the material of the interface layer 2 is, for example, SiO2, and SiO2 is formed on the semiconductor substrate 1 by a thermal oxidation method. For example, the semiconductor substrate 1 is placed in an O2 atmosphere at 860°C for 15 minutes for high-temperature oxidation to obtain a SiO2 layer with a thickness of 5 nm, i.e., the interface layer 2. It should be noted that the temperature of the thermal oxidation is not limited to 860°C, as long as the thermal oxidation can form SiO2.

[0055] According to the embodiment of the present invention, the method of depositing the interface layer 2 on the semiconductor substrate 1 is not limited here, for example, one of metal organic chemical vapor deposition (MOCVD), atomic layer deposition (ALD) and sputtering can also be used.

[0056] In operation S02 , a photosensitive layer 3 is deposited on the interface layer 2 .

[0057] According to an embodiment of the present invention, a gallium oxide thin film with a thickness of about 500 nm is deposited on the interface layer 2 by MOCVD as the photosensitive layer 3 .

[0058] In operation S03 , a top electrode 4 is deposited on the photosensitive layer 3 , and a back electrode 5 is deposited on a side of the semiconductor substrate 1 away from the interface layer 2 .

[0059] According to an embodiment of the present invention, a metal layer is deposited on the photosensitive layer 3 by electron beam evaporation to form a top electrode 4. A metal layer is deposited on the side of the semiconductor substrate 1 away from the interface layer 2 by electron beam evaporation to form a back electrode 5.

[0060] According to an exemplary embodiment of the present invention, the present invention provides a modulation method of a photodetector, comprising:

[0061] A forward bias is applied to the photodetector, and a day-blind ultraviolet light pulse is applied to the photodetector, so that the photodetector outputs a photoresponse current simulating the function of a biological synapse; and a reverse bias is applied to the photodetector, so that the photodetector erases the photoresponse current.

[0062] Figure 4A This is an IV characteristic curve of the photodetector provided in an embodiment of the present invention.

[0063] refer to Figure 4A As shown in Figure 2, under the voltage of 0~+10V, the dark current of the photodetector is suppressed and maintained at 10 -10 A; at a voltage of 0~-10V, the dark current of the photodetector is large. In other words, the photodetector responds to day-blind ultraviolet light, that is, illumination will cause the device current to increase sharply; and under dark conditions, the device's light response current (i.e. dark current) is suppressed under forward bias, and the device is turned on under negative bias.

[0064] Figure 4B The photocurrent response curve of the photodetector provided in the embodiment of the present invention to light pulse stimulation.

[0065] refer to Figure 4B As shown in Figure (i), after the photodetector is turned on by day-blind ultraviolet light, the photoresponse current of the device increases from 0 to 14μA within 8s at an operating voltage of +5V. After the day-blind ultraviolet light is removed and the photodetector is turned off, it takes a while for the photoresponse current to return to 0, that is, there is an obvious dark current, which indicates that the device has a sustainable photoconductivity effect (PPC effect).

[0066] refer to Figure 4B As shown in Figure (ii), after the photodetector is turned on by day-blind ultraviolet light, the photoresponse current of the device increases from 0 to 14μA within 8s at a working voltage of +5V. 0.5s after the photodetector is turned off, a reverse voltage of 2ms is applied to the photodetector, that is, under the action of -5V voltage, the photoresponse current of the device instantly returns to 0, and the device has no obvious PPC effect.

[0067] refer to Figure 4B As shown in Figure (iii), after the photodetector is turned on by day-blind ultraviolet light, the photoresponse current of the device increases from 0 to 14μA within 8s at a working voltage of +5V. After the photodetector is turned off, a reverse voltage of 2ms is immediately applied to the photodetector, that is, under the action of -5V voltage, the photoresponse current of the device instantly returns to 0, and the device has no obvious PPC effect.

[0068] It can be seen that the fabricated photodetector can suppress the PPC effect.

[0069] Figure 5 The graph is a variation curve of the double-pulse facilitation index value of the photodetector provided by the embodiment of the present invention under stimulation of multiple light pulses.

[0070] Among them, the horizontal axis is the interval time of multiple solar-blind ultraviolet light pulses, and the vertical axis is the double-pulse facilitation value.

[0071] Figure 5 The illustration in the figure is the photocurrent response curve of the photodetector to two consecutive day-blind ultraviolet light pulses. A1 and A2 are the response amplitude values.

[0072] Paired pulse facilitation (PPF) refers to the situation that when two consecutive light pulses are applied, the response amplitude A2 of the second light pulse is greater than the response amplitude A1 of the first light pulse. The PPF effect is one of the short-term plasticity characteristics of biological synapses. Figure 5The illustration in the figure shows a typical curve similar to that of a biological synapse, indicating that the above-mentioned device simulates the double-pulse facilitation (PPF) and achieves a preliminary short-term memory effect.

[0073] Figure 6 The photocurrent response curve of the photodetector provided in the embodiment of the present invention under different light pulse stimulation times.

[0074] refer to Figure 6 As shown, as the number of light pulse stimulations increases, the simulation of long-term plasticity (LTP) is achieved, and LTP increases with the increase in stimulation, which confirms that the photodetector of the present invention can achieve synaptic function simulation.

[0075] Figure 7 Figures A to C in the figure are photocurrent response curves of the photodetector provided in an embodiment of the present invention to 4-bit light pulse stimulation.

[0076] refer to Figure 7 As shown in Figure A, when the 4-bit light pulses input according to the time series stimulate the photodetector, the device generates a photocurrent response to the 4-bit light pulses, encodes the 4-bit light pulses as "1011", and realizes the perception and calculation of the 4-bit light pulses. The 4-bit light pulses include a first pulse laser with a wavelength of 254nm and a pulse width of 40ms, a 40ms non-pulsed laser, a third pulse laser with a wavelength of 254nm and a pulse width of 40ms, and a fourth pulse laser with a wavelength of 254nm and a pulse width of 40ms.

[0077] refer to Figure 7 As shown in Figure B, when the 4-bit light pulses input according to the time series stimulate the photodetector, the device generates a photocurrent response to the 4-bit light pulses, and encodes the 4-bit light pulses as "1101", realizing the perception and calculation of the 4-bit light pulses. The 4-bit light pulses include a first pulse laser with a wavelength of 254nm and a pulse width of 40ms, a second pulse laser with a wavelength of 254nm and a pulse width of 40ms, a 40ms pulse-free laser, and a fourth pulse laser with a wavelength of 254nm and a pulse width of 40ms.

[0078] refer to Figure 7 As shown in Figure C, when the 4-bit light pulses input according to the time series stimulate the photodetector, the device generates a photocurrent response to the 4-bit light pulses, and encodes the 4-bit light pulses as "1111", realizing the perception and calculation of the 4-bit light pulses. The 4-bit light pulses include a first pulse laser with a wavelength of 254nm and a pulse width of 40ms, a second pulse laser with a wavelength of 254nm and a pulse width of 40ms, a third pulse laser with a wavelength of 254nm and a pulse width of 40ms, and a fourth pulse laser with a wavelength of 254nm and a pulse width of 40ms.

[0079] It can be seen that the photodetector nonlinearly maps the 4-bit light pulses into current signals, completing the sensing and computing functions at the same time.

[0080] Moreover, after the day-blind ultraviolet light pulse is removed, the photoresponse current can be immediately erased after a reverse bias is applied to the device, and the device does not show a persistent photoconductivity effect. The current erasable function improves the operational repeatability of the photodetector.

[0081] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A photoelectric detector, characterized in that: include: Semiconductor substrate (1); An interface layer (2) located on a surface of the semiconductor substrate (1); as well as A photosensitive layer (3) is made of a gallium oxide thin film, and the photosensitive layer (3) is located on a surface of the interface layer (2) that is away from the semiconductor substrate (1); The interface layer (2) is suitable for regulating the energy band structure between the semiconductor substrate (1) and the photosensitive layer (3), so that in the absence of light, the photodetector exhibits a rectification characteristic of being turned off when the forward bias is applied and turned on when the reverse bias is applied; In response to stimulation by a solar-blind ultraviolet light pulse, under forward bias, the photodetector outputs a photoresponse current that simulates a biological synapse function; When the stimulation of the solar-blinding ultraviolet light pulse is removed and under reverse bias, the photodetector erases the photoresponse current.

2. The photodetector according to claim 1, characterized in that: Also includes: A top electrode (4) located on the photosensitive layer (3); A back electrode (5) is located on a surface of the semiconductor substrate (1) that is away from the interface layer (2).

3. The photodetector according to claim 1, characterized in that: The interface layer (2) is made of high barrier oxide; The material of the interface layer (2) includes a stack of one or more of SiO2, HfO2, MgO, ZnO, Al2O3, and ZrO2.

4. The photodetector according to claim 1, characterized in that: The thickness of the interface layer (2) is 1-10 nm, and the thickness of the gallium oxide film is 100-1000 nm; Preferably, the gallium oxide film has a thickness of 500 nm.

5. The photodetector according to claim 1, characterized in that: The biological synaptic functions include paired pulse facilitation, long-range plasticity, and short-range plasticity.

6. A modulation method for a photodetector as claimed in any one of claims 1 to 5, characterized in that: include: Applying a forward bias voltage to the photodetector, applying a day-blind ultraviolet light pulse stimulus to the photodetector, and the photodetector outputs a light response current simulating a biological synaptic function; as well as A reverse bias is applied to the photodetector, the photodetector erases the light response current, and the device current returns to an initial state, thereby achieving a repeatable operating characteristic of the photodetector.

7. The modulation method according to claim 6, characterized in that: The wavelength of the solar-blind ultraviolet light pulse is less than 280 nm.

8. Use of the photodetector according to any one of claims 1 to 5 as a device having the function of simulating biological synaptic behavior in artificial neural network hardware.

9. Use of the photodetector according to any one of claims 1 to 5 as an image processing device in an image sensor device.

10. A method for manufacturing a photodetector according to any one of claims 1 to 5, characterized in that: include: forming an interface layer (2) on a semiconductor substrate (1); Depositing a photosensitive layer (3) on the interface layer; as well as A top electrode (4) is deposited on the photosensitive layer (3), and a back electrode (5) is deposited on a side of the substrate (1) away from the interface layer (2).

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