Ultra-wideband vector modulator

Abstract

The invention discloses an ultra-wideband vector modulator, and belongs to the technical field of vector modulators. Comprising a broadside quadrature coupler, a first push-pull dual-phase amplitude modulator, a second push-pull dual-phase amplitude modulator, a grounding resistor and an in-phase power combiner, when a signal is input, the broadside quadrature coupler divides the signal into an I-path quadrature signal and a Q-path quadrature signal, the I-path quadrature signal is input into the first push-pull double-phase amplitude modulator, and the Q-path quadrature signal is input into the second push-pull double-phase amplitude modulator; i-path orthogonal signals modulated by the first push-pull double-phase amplitude modulator are input to a first input end IN1 of the in-phase power combiner, and Q-path orthogonal signals modulated by the second push-pull double-phase amplitude modulator are input to a second input end IN2 of the in-phase power combiner; i-path orthogonal signals and Q-path orthogonal signals modulated by the in-phase power synthesizer are synthesized and then output, the coupler is designed in a broadside coupling mode, and the problem that a vector modulator is narrow in bandwidth is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of vector modulators, and in particular to an ultra-wideband vector modulator. Background Art

[0002] A balanced IQ vector modulator is a chip that can achieve a 360° phase shift and a certain amount of attenuation for the input signal. It is widely used in microwave communication systems, phased array radars, and electronic warfare systems. Existing balanced IQ vector modulators use Lange couplers. The performance of the Lange coupler will directly affect the performance of the balanced IQ vector modulator. The bandwidth of the Lange coupler is limited by its own structure and it is difficult to make it ultra-wideband, which limits the bandwidth of the balanced IQ vector modulator. Summary of the invention

[0003] The purpose of the present invention is to overcome the deficiencies of the prior art and provide an ultra-wideband vector modulator.

[0004] The objective of the present invention is achieved through the following technical scheme: an ultra-wideband vector modulator, comprising a broadside orthogonal coupler, a first push-pull biphase amplitude modulator, a second push-pull biphase amplitude modulator, a grounding resistor and a co-phase power synthesizer; the IN end of the broadside orthogonal coupler is used to receive a signal, the coupling port CP of the broadside orthogonal coupler is connected to the input end of the first push-pull biphase amplitude modulator, the through port OUT of the broadside orthogonal coupler is connected to the input end of the second push-pull biphase amplitude modulator, the first end of the grounding resistor is connected to the isolation end ISO of the broadside orthogonal coupler; the second end of the grounding resistor is connected to the isolation end ISO of the broadside orthogonal coupler The output end of the first push-pull biphase amplitude modulator is connected to the first input end IN1 of the in-phase power synthesizer, the VI end of the first push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VI_ end of the first push-pull biphase amplitude modulator is connected to the second power supply Vc_; the output end of the second push-pull biphase amplitude modulator is connected to the second input end IN2 of the in-phase power synthesizer, the VQ end of the second push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VQ_ end of the second push-pull biphase amplitude modulator is connected to the second power supply Vc_; the broadside orthogonal coupler is a three-stage coupler; When a signal is input, the broadside orthogonal coupler divides the signal into an I-channel orthogonal signal and a Q-channel orthogonal signal, and inputs the I-channel orthogonal signal into the first push-pull biphase amplitude modulator, and the Q-channel orthogonal signal into the second push-pull biphase amplitude modulator; the I-channel orthogonal signal modulated by the first push-pull biphase amplitude modulator is input into the first input terminal IN1 of the in-phase power synthesizer, and the second push-pull biphase amplitude modulator inputs the modulated Q-channel orthogonal signal into the second input terminal IN2 of the in-phase power synthesizer; the I-channel orthogonal signal and the Q-channel orthogonal signal modulated by the in-phase power synthesizer are synthesized and output.

[0005] Preferably, the first push-pull biphase amplitude modulator comprises: a first broadside orthogonal coupler, a second broadside orthogonal coupler, a third broadside orthogonal coupler, a fourth broadside orthogonal coupler, a first grounding resistor, a second grounding resistor, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first transistor FET1, a second transistor FET2, a third transistor FET3 and a fourth transistor FET4; the IN end of the first broadside orthogonal coupler is connected to the coupling port CP of the broadside orthogonal coupler, the coupling port CP of the first broadside orthogonal coupler is connected to the IN end of the second broadside orthogonal coupler, and the through port O of the first broadside orthogonal coupler is connected to the through port O of the first broadside orthogonal coupler. UT is connected to the IN end of the fourth broadside orthogonal coupler, the isolation end ISO of the first broadside orthogonal coupler is connected to the first end of the first grounding resistor; the second end of the first isolation resistor is connected to the ground GND; the coupling port CP of the second broadside orthogonal coupler is connected to the drain of the first transistor FET1, the isolation end ISO of the second broadside orthogonal coupler is connected to the coupling port CP of the third broadside orthogonal coupler, and the through port OUT of the second broadside orthogonal coupler is connected to the drain of the second transistor FET2; the gate of the first transistor FET1 is connected to the first end of the first resistor R1, and the source of the first transistor FET1 is grounded GND; the second end of the first resistor R1 The first end of the fourth wide-side orthogonal coupler is connected to the first power supply Vc; the source of the second transistor FET2 is grounded GND, and the gate of the second transistor FET2 is connected to the first end of the second resistor R2; the second end of the second resistor R2 is connected to the first power supply Vc; the coupling port CP of the fourth wide-side orthogonal coupler is connected to the drain of the fourth transistor FET4, the isolation end ISO of the fourth wide-side orthogonal coupler is connected to the through port OUT of the third wide-side orthogonal coupler, and the through port OUT of the fourth wide-side orthogonal coupler is connected to the drain of the third transistor FET3; the gate of the fourth transistor FET4 is connected to the first end of the fourth resistor R4, and the source of the fourth transistor FET4 is grounded GND ; The second end of the fourth resistor R4 is connected to the second power supply Vc_; The source of the third transistor FET3 is grounded GND, and the gate of the third transistor FET3 is connected to the first end of the third resistor R3; The second end of the third resistor R3 is connected to the second power supply Vc_; The IN end of the third broadside orthogonal coupler is connected to the first input end IN1 of the in-phase power synthesizer, and the isolation end ISO of the third broadside orthogonal coupler is connected to the first end of the second grounding resistor; The second end of the second isolation resistor is connected to the ground GND; The first broadside orthogonal coupler, the second broadside orthogonal coupler, the third broadside orthogonal coupler and the fourth broadside orthogonal coupler are three-stage couplers.

[0006] Preferably, the second push-pull biphase amplitude modulator comprises: a fifth broadside orthogonal coupler, a sixth broadside orthogonal coupler, a seventh broadside orthogonal coupler, an eighth broadside orthogonal coupler, a third grounding resistor, a fourth grounding resistor, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a fifth transistor FET5, a sixth transistor FET6, a seventh transistor FET7 and an eighth transistor FET8; the IN end of the fifth broadside orthogonal coupler is connected to the through port OUT of the broadside orthogonal coupler, the coupling port CP of the fifth broadside orthogonal coupler is connected to the IN end of the sixth broadside orthogonal coupler, and the through end of the fifth broadside orthogonal coupler is connected to the through port OUT of the broadside orthogonal coupler. The port OUT is connected to the IN terminal of the eighth broadside orthogonal coupler, the isolation terminal ISO of the fifth broadside orthogonal coupler is connected to the first end of the third grounding resistor; the second end of the third isolation resistor is connected to the ground GND; the coupling port CP of the sixth broadside orthogonal coupler is connected to the drain of the fifth transistor FET5, the isolation terminal ISO of the sixth broadside orthogonal coupler is connected to the coupling port CP of the seventh broadside orthogonal coupler, and the through port OUT of the sixth broadside orthogonal coupler is connected to the drain of the sixth transistor FET6; the gate of the fifth transistor FET5 is connected to the first end of the fifth resistor R5, and the source of the fifth transistor FET5 is grounded GND; the first end of the fifth resistor R5 The two ends are connected to the first power supply Vc; the source of the sixth transistor FET6 is grounded GND, and the gate of the sixth transistor FET6 is connected to the first end of the sixth resistor R6; the second end of the sixth resistor R6 is connected to the first power supply Vc; the coupling port CP of the eighth wide-side orthogonal coupler is connected to the drain of the eighth transistor FET8, the isolation end ISO of the eighth wide-side orthogonal coupler is connected to the through port OUT of the seventh wide-side orthogonal coupler, and the through port OUT of the eighth wide-side orthogonal coupler is connected to the drain of the seventh transistor FET7; the gate of the eighth transistor FET8 is connected to the first end of the eighth resistor R8, and the source of the eighth transistor FET8 is grounded GND ; The second end of the eighth resistor R8 is connected to the second power supply Vc_; the source of the seventh transistor FET7 is grounded GND, and the gate of the seventh transistor FET7 is connected to the first end of the seventh resistor R7; the second end of the seventh resistor R7 is connected to the second power supply Vc_; the IN end of the seventh broadside orthogonal coupler is connected to the second input end IN2 of the in-phase power synthesizer, and the isolation end ISO of the seventh broadside orthogonal coupler is connected to the first end of the fourth grounding resistor; the second end of the fourth isolation resistor is connected to the ground GND; the fifth broadside orthogonal coupler, the sixth broadside orthogonal coupler, the seventh broadside orthogonal coupler and the eighth broadside orthogonal coupler are three-stage couplers.

[0007] Preferably, the grounding resistance is 50Ω.

[0008] Preferably, the three-stage coupler includes a front-stage coupler, an intermediate-stage coupler and a rear-stage coupler; the intermediate-stage coupler includes a first layer of metal and a second layer of metal stacked in sequence, the width of the second layer of metal is greater than the width of the first layer of metal so that the difference between the parasitic capacitance from the second layer of metal to ground and the parasitic capacitance from the first layer of metal to ground is within a first preset value. Preferably, the side of the first metal layer away from the second metal layer also includes a GaAs material layer; the side of the GaAs material layer away from the first metal layer also includes a ground metal; a SiN dielectric layer and a Polyimide dielectric layer are also included between the first metal layer and the second metal layer; the SiN dielectric layer is arranged on the side of the first metal layer close to the second metal layer; the Polyimide dielectric layer is arranged on the side of the SiN dielectric layer away from the first metal layer.

[0009] Preferably, the three-stage coupler is a 3dB coupler.

[0010] The beneficial effects of the present invention are: 1) The coupler is designed by adopting the wide-side coupling method, and there is enough coupling coefficient to design an ultra-wideband wide-side orthogonal coupler, so that the bandwidth of the vector modulator is increased to reach the desired bandwidth, solving the problem of narrow bandwidth of the vector modulator.

[0011] 2) Increasing the number of nodes of the wide-edge orthogonal coupler increases the bandwidth while increasing the width of the second metal layer to avoid the problem of phase instability of the coupler caused by the large difference in parasitic capacitance between the two metal layers and the ground. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic diagram of the ultra-wideband vector modulator of the present invention; Figure 2 This is a schematic diagram of a push-pull bi-phase amplitude modulator of the present invention; Figure 3 It is a top view of the existing Lange coupler; Figure 4 A top view of a broadside orthogonal coupler of the present invention; Figure 5 The figure is a frequency response curve of the appearance and coupling degree of the first-stage coupler and the third-stage coupler; Figure 6 It is an overlapping diagram of metal layers of an existing intermediate-stage coupler; Figure 7 It is a simulation diagram of an existing intermediate-stage coupler; Figure 8 It is an overlapping diagram of the metal layers of the intermediate-stage coupler of the present invention; Fig. 9 It is a simulation schematic diagram of the intermediate-stage coupler of the present invention. DETAILED DESCRIPTION

[0013] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0014] See also Figure 1-Figure 9 The present invention provides an ultra-wideband vector modulator, comprising a broadside orthogonal coupler, a first push-pull biphase amplitude modulator, a second push-pull biphase amplitude modulator, a grounding resistor and a co-phase power synthesizer; the IN end of the broadside orthogonal coupler is used to receive a signal, the coupling port CP of the broadside orthogonal coupler is connected to the input end of the first push-pull biphase amplitude modulator, the through port OUT of the broadside orthogonal coupler is connected to the input end of the second push-pull biphase amplitude modulator, the first end of the grounding resistor is connected to the isolation end ISO of the broadside orthogonal coupler; the second end of the grounding resistor is connected to the ground GND ; The output end of the first push-pull biphase amplitude modulator is connected to the first input end IN1 of the in-phase power synthesizer, the VI end of the first push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VI_ end of the first push-pull biphase amplitude modulator is connected to the second power supply Vc_; the output end of the second push-pull biphase amplitude modulator is connected to the second input end IN2 of the in-phase power synthesizer, the VQ end of the second push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VQ_ end of the second push-pull biphase amplitude modulator is connected to the second power supply Vc_; the broadside orthogonal coupler is a three-stage coupler; When the signal is input, the broadside orthogonal coupler divides the signal into an I-way orthogonal signal and a Q-way orthogonal signal, and inputs the I-way orthogonal signal into the first push-pull biphase amplitude modulator, and the Q-way orthogonal signal into the second push-pull biphase amplitude modulator; the I-way orthogonal signal modulated by the first push-pull biphase amplitude modulator is input into the first input terminal IN1 of the in-phase power synthesizer, and the second push-pull biphase amplitude modulator inputs the modulated Q-way orthogonal signal into the second input terminal IN2 of the in-phase power synthesizer; the I-way orthogonal signal and the Q-way orthogonal signal modulated by the in-phase power synthesizer are synthesized and output. The coupling coefficient is improved, and the bandwidth of the vector modulator is increased.

[0015] In some embodiments, the first push-pull biphase amplitude modulator includes: a first broadside orthogonal coupler, a second broadside orthogonal coupler, a third broadside orthogonal coupler, a fourth broadside orthogonal coupler, a first grounding resistor, a second grounding resistor, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first transistor FET1, a second transistor FET2, a third transistor FET3 and a fourth transistor FET4; the IN end of the first broadside orthogonal coupler is connected to the coupling port CP of the broadside orthogonal coupler, the coupling port CP of the first broadside orthogonal coupler is connected to the IN end of the second broadside orthogonal coupler, and the through port of the first broadside orthogonal coupler is connected to the coupling port CP of the first broadside orthogonal coupler. The port OUT is connected to the IN terminal of the fourth broadside orthogonal coupler, the isolation terminal ISO of the first broadside orthogonal coupler is connected to the first terminal of the first grounding resistor; the second terminal of the first isolation resistor is connected to the ground GND; the coupling port CP of the second broadside orthogonal coupler is connected to the drain of the first transistor FET1, the isolation terminal ISO of the second broadside orthogonal coupler is connected to the coupling port CP of the third broadside orthogonal coupler, and the through port OUT of the second broadside orthogonal coupler is connected to the drain of the second transistor FET2; the gate of the first transistor FET1 is connected to the first terminal of the first resistor R1, and the source of the first transistor FET1 is grounded GND; the The second end is connected to the first power supply Vc; the source of the second transistor FET2 is grounded GND, and the gate of the second transistor FET2 is connected to the first end of the second resistor R2; the second end of the second resistor R2 is connected to the first power supply Vc; the coupling port CP of the fourth wide-side orthogonal coupler is connected to the drain of the fourth transistor FET4, the isolation end ISO of the fourth wide-side orthogonal coupler is connected to the through port OUT of the third wide-side orthogonal coupler, and the through port OUT of the fourth wide-side orthogonal coupler is connected to the drain of the third transistor FET3; the gate of the fourth transistor FET4 is connected to the first end of the fourth resistor R4, and the source of the fourth transistor FET4 is grounded GN D; the second end of the fourth resistor R4 is connected to the second power supply Vc_; the source of the third transistor FET3 is grounded GND, and the gate of the third transistor FET3 is connected to the first end of the third resistor R3; the second end of the third resistor R3 is connected to the second power supply Vc_; the IN end of the third broadside orthogonal coupler is connected to the first input end IN1 of the in-phase power synthesizer, and the isolation end ISO of the third broadside orthogonal coupler is connected to the first end of the second grounding resistor; the second end of the second isolation resistor is connected to the ground GND; the first broadside orthogonal coupler, the second broadside orthogonal coupler, the third broadside orthogonal coupler and the fourth broadside orthogonal coupler are three-stage couplers.

[0016] In some embodiments, the second push-pull biphase amplitude modulator includes: a fifth broadside orthogonal coupler, a sixth broadside orthogonal coupler, a seventh broadside orthogonal coupler, an eighth broadside orthogonal coupler, a third grounding resistor, a fourth grounding resistor, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a fifth transistor FET5, a sixth transistor FET6, a seventh transistor FET7 and an eighth transistor FET8; the IN end of the fifth broadside orthogonal coupler is connected to the through port OUT of the broadside orthogonal coupler, the coupling port CP of the fifth broadside orthogonal coupler is connected to the IN end of the sixth broadside orthogonal coupler, and the The through port OUT is connected to the IN terminal of the eighth broadside orthogonal coupler, the isolation terminal ISO of the fifth broadside orthogonal coupler is connected to the first terminal of the third grounding resistor; the second terminal of the third isolation resistor is connected to the ground GND; the coupling port CP of the sixth broadside orthogonal coupler is connected to the drain of the fifth transistor FET5, the isolation terminal ISO of the sixth broadside orthogonal coupler is connected to the coupling port CP of the seventh broadside orthogonal coupler, and the through port OUT of the sixth broadside orthogonal coupler is connected to the drain of the sixth transistor FET6; the gate of the fifth transistor FET5 is connected to the first terminal of the fifth resistor R5, and the source of the fifth transistor FET5 is grounded GND; the fifth resistor R5 The second end of the sixth transistor FET6 is connected to the first power supply Vc; the source of the sixth transistor FET6 is grounded GND, and the gate of the sixth transistor FET6 is connected to the first end of the sixth resistor R6; the second end of the sixth resistor R6 is connected to the first power supply Vc; the coupling port CP of the eighth broadside orthogonal coupler is connected to the drain of the eighth transistor FET8, the isolation end ISO of the eighth broadside orthogonal coupler is connected to the through port OUT of the seventh broadside orthogonal coupler, and the through port OUT of the eighth broadside orthogonal coupler is connected to the drain of the seventh transistor FET7; the gate of the eighth transistor FET8 is connected to the first end of the eighth resistor R8, and the source of the eighth transistor FET8 is grounded GN D; the second end of the eighth resistor R8 is connected to the second power supply Vc_; the source of the seventh transistor FET7 is grounded GND, and the gate of the seventh transistor FET7 is connected to the first end of the seventh resistor R7; the second end of the seventh resistor R7 is connected to the second power supply Vc_; the IN end of the seventh broadside orthogonal coupler is connected to the second input end IN2 of the in-phase power synthesizer, and the isolation end ISO of the seventh broadside orthogonal coupler is connected to the first end of the fourth grounding resistor; the second end of the fourth isolation resistor is connected to the ground GND; the fifth broadside orthogonal coupler, the sixth broadside orthogonal coupler, the seventh broadside orthogonal coupler and the eighth broadside orthogonal coupler are three-stage couplers.

[0017] In some embodiments, the grounding resistance is 50Ω.

[0018] like Figure 3 and Figure 4As shown, the Lange coupler and the broadside orthogonal coupler are both four-port devices, the Lange coupler is a first-stage coupler, and the broadside orthogonal coupler is a third-stage coupler; Figure 4 The first-stage and third-stage couplers and their coupling response curves to frequency are given. The coupling of the first-stage coupler changes very quickly within a certain frequency range, and the bandwidth is relatively narrow. Compared with the first-stage coupler, the coupling of the third-stage coupler changes more slowly within a certain frequency range, and has a very wide bandwidth. The Lange coupler belongs to the λ / 4 coupler type. Due to the limitation of its own structure, the Lange coupler is used as the 3dB orthogonal coupler in the balanced IQ vector modulator, which limits the bandwidth of the balanced IQ vector modulator. The 3 dB orthogonal coupler is coupled with a wide side, and the bandwidth of the coupler can be increased by increasing the number of coupler sections, thereby increasing the bandwidth of the balanced IQ vector modulator.

[0019] In some embodiments, the three-stage coupler includes a front-stage coupler, an intermediate-stage coupler, and a rear-stage coupler; the intermediate-stage coupler includes a first layer of metal and a second layer of metal stacked in sequence, the width of the second layer of metal being greater than the width of the first layer of metal so that the difference between the parasitic capacitance from the second layer of metal to ground and the parasitic capacitance from the first layer of metal to ground is within a first preset value.

[0020] like Figure 6 As shown in the figure, the existing intermediate coupler is designed with two layers of metal on the wide side. The vertical distance between the two layers of metal and the ground metal and the material sandwiched between the two layers of metal are different, resulting in different parasitic capacitance between the two layers of metal, which affects the entire coupling phase and limits the working frequency of the coupler. The simulation results are shown in the figure. Figure 7 As shown, in the 3GHz~18GHz frequency band, the amplitude imbalance is ≤1.5dB, in the 3GHz~16GHz frequency band, the phase imbalance is ≤3°, and the phase deteriorates rapidly in the 16GHz~18GHz frequency band, with a phase imbalance of ≤10°. In some embodiments, the side of the first metal layer away from the second metal layer also includes a GaAs material layer; the side of the GaAs material layer away from the first metal layer also includes a ground metal; the first metal layer and the second metal layer also include a SiN dielectric layer and a Polyimide dielectric layer; the SiN dielectric layer is arranged on the side of the first metal layer close to the second metal layer; the Polyimide dielectric layer is arranged on the side of the SiN dielectric layer away from the first metal layer.

[0021] The intermediate coupler of the present invention adopts Figure 8In the design shown, according to the capacitance formula C=εS / 4πkd, the thickness of various materials in the GaAs process is fixed, and only the length and width of the used layer material can be changed to change the area S of the second metal layer and the ground metal layer. In order to solve the difference in parasitic capacitance between the upper and lower metal layers to the ground, the width of the second metal layer is increased, so that the parasitic capacitance between the second metal layer and the first metal layer to the ground is roughly the same, and the phase of the coupler is relatively stable. The simulation results are shown in Fig. 9 As shown in the figure, within the 3GHz~18GHz frequency band, the amplitude compensation balance is ≤1.5dB, and the phase imbalance is ≤5°. Within this frequency band, the phase is relatively stable without large fluctuations. The second metal layer is widened to compensate for the parasitic capacitance, and the phase is improved.

[0022] In some embodiments, the three-stage coupler is a 3dB coupler.

[0023] The above is only a preferred embodiment of the present invention. It should be understood that the present invention is not limited to the form disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be modified within the scope of the concept described herein through the above teachings or the technology or knowledge of the relevant field. The changes and modifications made by those skilled in the art shall not deviate from the spirit and scope of the present invention, and shall be within the scope of protection of the claims attached to the present invention.

Claims

1. An ultra-wideband vector modulator, characterized in that: It includes a broadside orthogonal coupler, a first push-pull biphase amplitude modulator, a second push-pull biphase amplitude modulator, a grounding resistor and a co-phase power synthesizer; the IN end of the broadside orthogonal coupler is used to receive a signal, the coupling port CP of the broadside orthogonal coupler is connected to the input end of the first push-pull biphase amplitude modulator, the through port OUT of the broadside orthogonal coupler is connected to the input end of the second push-pull biphase amplitude modulator, the first end of the grounding resistor is connected to the isolation end ISO of the broadside orthogonal coupler; the second end of the grounding resistor is connected to the ground GND; the output end of the first push-pull biphase amplitude modulator is connected to the first input end IN1 of the co-phase power synthesizer, the VI end of the first push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VI_ end of the first push-pull biphase amplitude modulator is connected to the second power supply Vc_; the output end of the second push-pull biphase amplitude modulator is connected to the second input end IN2 of the co-phase power synthesizer, the VQ end of the second push-pull biphase amplitude modulator is connected to the first power supply Vc, and the VQ_ end of the second push-pull biphase amplitude modulator is connected to the second power supply Vc_; the broadside orthogonal coupler is a three-stage coupler; When a signal is input, the broadside orthogonal coupler divides the signal into an I-channel orthogonal signal and a Q-channel orthogonal signal, and inputs the I-channel orthogonal signal to the first push-pull biphase amplitude modulator, and the Q-channel orthogonal signal to the second push-pull biphase amplitude modulator; The I-channel orthogonal signal modulated by the first push-pull biphase amplitude modulator is input to the first input terminal IN1 of the in-phase power synthesizer, and the second push-pull biphase amplitude modulator inputs the modulated Q-channel orthogonal signal to the second input terminal IN2 of the in-phase power synthesizer; the I-channel orthogonal signal and the Q-channel orthogonal signal modulated by the in-phase power synthesizer are synthesized and output.

2. The ultra-wideband vector modulator according to claim 1, characterized in that: The first push-pull biphase amplitude modulator comprises: a first broadside orthogonal coupler, a second broadside orthogonal coupler, a third broadside orthogonal coupler, a fourth broadside orthogonal coupler, a first grounding resistor, a second grounding resistor, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first transistor FET1, a second transistor FET2, a third transistor FET3 and a fourth transistor FET4; the IN end of the first broadside orthogonal coupler is connected to the coupling port CP of the broadside orthogonal coupler, the coupling port CP of the first broadside orthogonal coupler is connected to the IN end of the second broadside orthogonal coupler, and the through port OUT of the first broadside orthogonal coupler is connected to the OUT end of the second broadside orthogonal coupler. The first broadside orthogonal coupler is connected to the IN end of the fourth broadside orthogonal coupler, the isolation end ISO of the first broadside orthogonal coupler is connected to the first end of the first grounding resistor; the second end of the first isolation resistor is connected to the ground GND; the coupling port CP of the second broadside orthogonal coupler is connected to the drain of the first transistor FET1, the isolation end ISO of the second broadside orthogonal coupler is connected to the coupling port CP of the third broadside orthogonal coupler, and the through port OUT of the second broadside orthogonal coupler is connected to the drain of the second transistor FET2; the gate of the first transistor FET1 is connected to the first end of the first resistor R1, and the source of the first transistor FET1 is grounded GND; the second end of the first resistor R1 is connected to the The first power supply Vc is connected; the source of the second transistor FET2 is grounded GND, and the gate of the second transistor FET2 is connected to the first end of the second resistor R2; the second end of the second resistor R2 is connected to the first power supply Vc; the coupling port CP of the fourth wide-side orthogonal coupler is connected to the drain of the fourth transistor FET4, the isolation port ISO of the fourth wide-side orthogonal coupler is connected to the through port OUT of the third wide-side orthogonal coupler, and the through port OUT of the fourth wide-side orthogonal coupler is connected to the drain of the third transistor FET3; the gate of the fourth transistor FET4 is connected to the first end of the fourth resistor R4, and the source of the fourth transistor FET4 is grounded GND; The second end of the fourth resistor R4 is connected to the second power supply Vc_; the source of the third transistor FET3 is grounded GND, and the gate of the third transistor FET3 is connected to the first end of the third resistor R3; the second end of the third resistor R3 is connected to the second power supply Vc_; the IN end of the third broadside orthogonal coupler is connected to the first input end IN1 of the in-phase power synthesizer, and the isolation end ISO of the third broadside orthogonal coupler is connected to the first end of the second grounding resistor; the second end of the second isolation resistor is connected to the ground GND; the first broadside orthogonal coupler, the second broadside orthogonal coupler, the third broadside orthogonal coupler and the fourth broadside orthogonal coupler are three-stage couplers.

3. The ultra-wideband vector modulator according to claim 1, characterized in that: The second push-pull biphase amplitude modulator comprises: a fifth broadside orthogonal coupler, a sixth broadside orthogonal coupler, a seventh broadside orthogonal coupler, an eighth broadside orthogonal coupler, a third grounding resistor, a fourth grounding resistor, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a fifth transistor FET5, a sixth transistor FET6, a seventh transistor FET7 and an eighth transistor FET8; the IN end of the fifth broadside orthogonal coupler is connected to the through port OUT of the broadside orthogonal coupler, the coupling port CP of the fifth broadside orthogonal coupler is connected to the IN end of the sixth broadside orthogonal coupler, and the through port OU of the fifth broadside orthogonal coupler is connected to the through port OUT of the broadside orthogonal coupler. T is connected to the IN end of the eighth broadside orthogonal coupler, the isolation end ISO of the fifth broadside orthogonal coupler is connected to the first end of the third grounding resistor; the second end of the third isolation resistor is connected to the ground GND; the coupling port CP of the sixth broadside orthogonal coupler is connected to the drain of the fifth transistor FET5, the isolation end ISO of the sixth broadside orthogonal coupler is connected to the coupling port CP of the seventh broadside orthogonal coupler, and the through port OUT of the sixth broadside orthogonal coupler is connected to the drain of the sixth transistor FET6; the gate of the fifth transistor FET5 is connected to the first end of the fifth resistor R5, and the source of the fifth transistor FET5 is grounded GND; the second end of the fifth resistor R5 The first power supply Vc is connected; the source of the sixth transistor FET6 is grounded GND, and the gate of the sixth transistor FET6 is connected to the first end of the sixth resistor R6; the second end of the sixth resistor R6 is connected to the first power supply Vc; the coupling port CP of the eighth broadside orthogonal coupler is connected to the drain of the eighth transistor FET8, the isolation end ISO of the eighth broadside orthogonal coupler is connected to the through port OUT of the seventh broadside orthogonal coupler, and the through port OUT of the eighth broadside orthogonal coupler is connected to the drain of the seventh transistor FET7; the gate of the eighth transistor FET8 is connected to the first end of the eighth resistor R8, and the source of the eighth transistor FET8 is grounded GND; The second end of the eighth resistor R8 is connected to the second power supply Vc_; the source of the seventh transistor FET7 is grounded GND, and the gate of the seventh transistor FET7 is connected to the first end of the seventh resistor R7; the second end of the seventh resistor R7 is connected to the second power supply Vc_; the IN end of the seventh broadside orthogonal coupler is connected to the second input end IN2 of the in-phase power synthesizer, and the isolation end ISO of the seventh broadside orthogonal coupler is connected to the first end of the fourth grounding resistor; the second end of the fourth isolation resistor is connected to the ground GND; the fifth broadside orthogonal coupler, the sixth broadside orthogonal coupler, the seventh broadside orthogonal coupler and the eighth broadside orthogonal coupler are three-stage couplers.

4. The ultra-wideband vector modulator according to any one of claims 1 to 3, characterized in that: The grounding resistance is 50Ω.

5. The ultra-wideband vector modulator according to any one of claims 1 to 3, characterized in that: The three-stage coupler includes a front-stage coupler, an intermediate-stage coupler and a rear-stage coupler; the intermediate-stage coupler includes a first layer of metal and a second layer of metal stacked in sequence, the width of the second layer of metal is greater than the width of the first layer of metal so that the difference between the parasitic capacitance from the second layer of metal to the ground and the parasitic capacitance from the first layer of metal to the ground is within a first preset value.

6. The ultra-wideband vector modulator according to claim 5, characterized in that: The side of the first metal layer away from the second metal layer also includes a GaAs material layer; the side of the GaAs material layer away from the first metal layer also includes a ground metal; the first metal layer and the second metal layer also include a SiN dielectric layer and a Polyimide dielectric layer; the SiN dielectric layer is arranged on the side of the first metal layer close to the second metal layer; the Polyimide dielectric layer is arranged on the side of the SiN dielectric layer away from the first metal layer.

7. The ultra-wideband vector modulator according to claim 5, characterized in that: The three-stage coupler is a 3dB coupler.

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