Method and apparatus for determining Class II short-circuit transient current of IGBT devices

Abstract

This invention discloses a method and apparatus for determining the transient current of a Type II short-circuit IGBT device, relating to the field of power electronics technology. The method includes: in response to determining that a Type II short circuit has occurred in the IGBT device, determining the operating state of the IGBT device, wherein the operating state includes a saturation region and an active region; in response to the operating state being the saturation region, determining a first rate of change of the collector current of the IGBT device, and determining a first transient current of the IGBT device based on the first rate of change of the collector current; and in response to the operating state being the active region, determining a second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current. Based on the technical solution of this application, after a Type II short circuit occurs in the IGBT device, the state of the collector current and the collector-emitter voltage can be grasped, which has certain guiding significance for IGBT state detection.

Description

Technical Field

[0001] This invention relates to the field of power electronics technology, and in particular to a method and apparatus for determining transient current in IGBT devices. Background Technology

[0002] IGBT (Insulated Gate Bipolar Transistor) devices combine the advantages of fast switching speed of MOSFET devices and low conduction loss of bipolar devices, and have been widely used in new energy converters, flexible DC transmission equipment and dynamic reactive power compensation equipment.

[0003] IGBT turn-on transient collector current i C With collector-emitter voltage u CE There are drastic changes, for i C with u CE Understanding the state is crucial for conducting power loss analysis and transient electrical stress analysis.

[0004] This section is intended to provide background or context for the embodiments of the invention set forth in the claims. The description herein is not an admission that it is prior art simply because it is included in this section. Summary of the Invention

[0005] To address at least one of the technical problems mentioned in the background section, this application provides a method and apparatus for determining the second type of short-circuit transient current of IGBT devices, which has certain guiding significance for IGBT condition detection.

[0006] In a first aspect, embodiments of the present invention provide a method for determining the type II short-circuit transient current of an IGBT device, the method comprising:

[0007] In response to determining that a type II short circuit has occurred in the IGBT device, the operating state of the IGBT device is determined, wherein the operating state includes a saturation region and an active region;

[0008] In response to the operating state being the saturation region, a first rate of change of the collector current of the IGBT device is determined, and a first transient current of the IGBT device is determined based on the first rate of change of the collector current.

[0009] In response to the operating state being the active region, the second transient current of the IGBT device is determined based on the control relationship between the gate-emitter voltage and the collector current.

[0010] In some optional embodiments of this example, the step of determining that the IGBT device has experienced a Type II short circuit includes:

[0011] Determine whether the IGBT device is turned on;

[0012] In response to determining that the IGBT device is turned on, it is determined whether the first preset node and the second preset node of the half-bridge circuit are short-circuited.

[0013] In response to determining that a short circuit exists between the first preset node and the second preset node, it is determined that the IGBT device has experienced a type II short circuit.

[0014] In some optional embodiments of this example, the step of determining the operating state of the IGBT device includes:

[0015] Obtain the output characteristic curve of the IGBT device;

[0016] Based on the output characteristic curve, determine the relationship between collector current and collector-emitter voltage;

[0017] In response to the collector current increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the saturation region;

[0018] In response to the fact that the collector current does not increase linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

[0019] In some optional embodiments of this example, determining the first rate of change of the collector current of the IGBT device includes:

[0020] The first rate of change of the collector current is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, and the parasitic inductance of the IGBT device package.

[0021] In some alternative embodiments of this example, before determining the second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes:

[0022] Determine the rate of change of collector-emitter voltage;

[0023] The gate-emitter voltage is determined based on the control relationship between the collector-emitter voltage and the gate-emitter voltage, as well as the rate of change of the collector-emitter voltage.

[0024] In some optional embodiments of this example, determining the rate of change of the collector-emitter voltage includes:

[0025] The rate of change of the collector-emitter voltage is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, the parasitic inductance of the IGBT device package, and the second rate of change of the collector current.

[0026] Secondly, embodiments of the present invention also provide a device for determining the type II short-circuit transient current of an IGBT device, the device comprising:

[0027] The operating state determination module is configured to determine the operating state of the IGBT device in response to determining that a type II short circuit has occurred in the IGBT device, wherein the operating state includes a saturation region and an active region;

[0028] The first transient current determination module is configured to determine a first rate of change of the collector current of the IGBT device in response to the operating state being the saturation region, and to determine a first transient current of the IGBT device based on the first rate of change of the collector current.

[0029] The second transient current determination module is configured to determine the second transient current of the IGBT device in response to the operating state being the active region, based on the control relationship between the gate-emitter voltage and the collector current.

[0030] Thirdly, embodiments of the present invention also provide an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, it implements the above-mentioned method for determining the second type of short-circuit transient current of an IGBT device.

[0031] Fourthly, embodiments of the present invention also provide a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the above-described method for determining the type II short-circuit transient current of an IGBT device.

[0032] Fifthly, embodiments of the present invention also provide a computer program product, the computer program product including a computer program, which, when executed by a processor, implements the above-described method for determining the second type of short-circuit transient current of an IGBT device.

[0033] The present invention provides a method and apparatus for determining the transient current of a type II short circuit in an IGBT device. After a type II short circuit occurs in the IGBT device, the state of the collector current and collector-emitter voltage can be determined, which has certain guiding significance for IGBT state detection. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. In the drawings:

[0035] Figure 1 This is one of the schematic flowcharts of a transient current determination method for IGBT devices according to an embodiment of the present invention;

[0036] Figure 2 This is a second schematic flowchart of the transient current determination method for IGBT devices according to an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram of the half-bridge circuit model according to an embodiment of the present invention;

[0038] Figure 4 This is the third schematic flowchart of the transient current determination method for IGBT devices according to an embodiment of the present invention;

[0039] Figure 5 This is a schematic diagram of the circuit output characteristic curve after a type II short circuit according to Embodiment 2 of the present invention;

[0040] Figure 6 This is a schematic diagram of the IGBT chip structure according to an embodiment of the present invention;

[0041] Figure 7 This is a schematic diagram of the transient current determination device for IGBT devices according to an embodiment of the present invention;

[0042] Figure 8 This is a schematic diagram of the physical structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0043] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Here, the illustrative embodiments of the present invention and their descriptions are used to explain the present invention, but are not intended to limit the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0044] Embodiments of this application provide a method for determining the type II short-circuit transient current of an IGBT device, such as... Figure 1 As shown, the method includes:

[0045] Step 10: In response to determining that a type II short circuit has occurred in the IGBT device, determine the operating state of the IGBT device, wherein the operating state includes the saturation region and the active region.

[0046] It should be noted that IGBT short circuits can be classified into Class I and Class II short circuits based on the type of short circuit: a shoot-through within the bridge arm is called a Class I short circuit, while a short circuit occurring on the load side with a relatively large equivalent short circuit impedance is called a Class II short circuit.

[0047] In some optional embodiments of this example, such as Figure 2 As shown, the steps to determine if the IGBT device has experienced a Type II short circuit include:

[0048] Step S1: Determine whether the IGBT device is turned on;

[0049] Step S2: In response to determining that the IGBT device is turned on, determine whether the first preset node and the second preset node of the half-bridge circuit are short-circuited;

[0050] Step S3: In response to determining that there is a short circuit between the first preset node and the second preset node, it is determined that the IGBT device has a type II short circuit.

[0051] In this step, firstly, it is determined whether the IGBT device is in the on state; secondly, based on the determination that the IGBT device is on, it is determined whether the first preset node and the second preset node set on the half-bridge circuit model are short-circuited; finally, based on the determination that the short circuit is short-circuited, it is determined that the IGBT device has a type II short circuit.

[0052] In this application, the IGBT device is configured as follows: Figure 3 In the half-bridge circuit model shown, the reference directions of voltage and current in the half-bridge circuit model are already... Figure 3 The bid was successful. When a short circuit occurs in the upper half of the converter circuit (e.g., a short circuit between points A and K) while the IGBT is already turned on, the IGBT will experience a Class II short circuit.

[0053] Additionally, it should be noted that, in Figure 2 Middle,U DC The DC bus voltage, u GE R is the gate voltage. G U is the gate resistance. G,on U is the gate power supply voltage. CE collector-emitter voltage (u) CE,chip L is the collector-emitter voltage of the IGBT chip. s,CE (for IGBT device package parasitic inductance), i C For collector current, u F FWD voltage (u F,chip L is the collector-emitter voltage of the chip. s,F (for parasitic inductance in FWD device packages), i F For FWD current, I L L is the load inductor current. s,1 L is the parasitic inductance value of the IGBT circuit. s,2 This represents the parasitic inductance value of the FWD freewheeling circuit.

[0054] Furthermore, in this embodiment, when it is determined that a Class II short circuit has occurred in the IGBT device, it is necessary to first determine the operating state of the IGBT device.

[0055] In this embodiment, the operating state of the IGBT is divided into the following parts:

[0056] Cut-off region: When the voltage between the collector and emitter (collector-emitter voltage) is less than a threshold voltage, the PN junction on the back of the IGBT is cut off and no current flows.

[0057] Saturation region: When the voltage between collector and collector (CE) exceeds the threshold voltage, current begins to flow, and the voltage between CE increases linearly with the increase of collector current.

[0058] Active region (linear region): As the voltage between collector and collector continues to rise, the current increases further. After reaching a certain critical point, the collector-collector voltage increases rapidly, while the collector current does not increase accordingly.

[0059] In some optional embodiments of this example, such as Figure 4 As shown, the step of determining the operating state of the IGBT device includes:

[0060] Step 101: Obtain the output characteristic curve of the IGBT device;

[0061] Step 102: Determine the relationship between collector current and collector-emitter voltage based on the output characteristic curve;

[0062] Step 103: In response to the linear increase of the collector current with the increase of the collector-emitter voltage, determine that the operating state is the saturation region;

[0063] Step 104: In response to the fact that the collector current does not increase linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

[0064] In this application, the determination of whether an IGBT device is in the active or saturated region is mainly based on its output characteristic curve (e.g., Figure 5 When the IGBT device operates in the saturation region, the collector current i C collector voltage u CE The collector current i increases linearly with the increase of the IGBT; however, when the IGBT enters the active region, the collector current i... C No longer affected by collector voltage u CE The IGBT loss changes significantly with the increase in [the value of the IGBT], which increases the loss of the IGBT and needs to be avoided.

[0065] In this embodiment, to prevent the IGBT device from entering the active region, the following measures can be taken: Reasonable circuit design: Ensure the load current does not exceed the rated value of the IGBT device. Overcurrent protection devices: Such as current sensors and fuses, to promptly cut off the power supply when the current is too high. Optimized heat dissipation design: Increase the area of ​​the heat sink, improve the thermal conductivity of the heat dissipation material, etc., monitor the IGBT temperature in real time, and take cooling measures when the temperature is too high. Adjust the drive circuit: Ensure the drive circuit is designed reasonably, avoiding excessively high drive signal frequency or improper parameter settings that could cause the IGBT to malfunction.

[0066] Step 20: In response to the operating state being the saturation region, determine the first rate of change of the collector current of the IGBT device, and determine the first transient current of the IGBT device based on the first rate of change of the collector current.

[0067] In some optional embodiments of this example, determining the first rate of change of the collector current of the IGBT device includes:

[0068] The first rate of change of the collector current is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, and the parasitic inductance of the IGBT device package.

[0069] See Figure 5 This is a schematic diagram of the output characteristic curve of an IGBT device during a type II short-circuit transient process. Figure 5 It can be seen from t SC The moment when a short circuit occurs between points A and K is... Figure 5 t sc During the period ~t1, the IGBT device is still in the saturation region. The collector current i C The rate of change of satisfies the following relationship:

[0070]

[0071] In equation (1), L s for Figure 3 L shown s,1 L s,2 and L s,CE sum.

[0072] i C It can be obtained by calculation using equation (2):

[0073]

[0074] In equation (2), t is t sc The time is the starting time, and the i calculated by equation (2) C That is, the first transient current of the IGBT device.

[0075] Step 30: In response to the operating state being the active region, determine the second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current.

[0076] In some alternative embodiments of this example, before determining the second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes:

[0077] Step A1: Determine the rate of change of collector-emitter voltage.

[0078] In some optional embodiments of this example, step A1 includes:

[0079] The rate of change of the collector-emitter voltage is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, the parasitic inductance of the IGBT device package, and the second rate of change of the collector current.

[0080] Specifically, in this application, Figure 5 At time t1, the collector current i of the IGBT C The IGBT reaches the saturation current value required to achieve its output characteristics. After time t1, the IGBT exits the saturation region and enters the active region.

[0081] The main circuit satisfies the following relationship:

[0082]

[0083] We can obtain the following from equation (3):

[0084]

[0085] Step A2: Determine the gate-emitter voltage based on the control relationship between the collector-emitter voltage and the gate-emitter voltage, as well as the rate of change of the collector-emitter voltage.

[0086] Specifically, the control relationship between the gate voltage and the collector current is as follows:

[0087]

[0088] In the formula, w is the gate channel width, μ n For channel electron mobility, C ox α is the capacitance per unit area of ​​the channel, l is the gate channel length, and α is the channel capacitance per unit area. pnp The amplification factor of the PNP transistor inside the IGBT, U T This is the gate threshold voltage.

[0089] Specifically, the relationship between the collector-emitter voltage and the gate-emitter voltage is as follows:

[0090]

[0091] Equation (6) can be rearranged into a first-order differential equation of the following form:

[0092]

[0093] In this embodiment, considering time t = t1, u GE =U G,on The solution to equation (7) is:

[0094]

[0095] Furthermore, substituting equations (4) and (8) into equation (5), we obtain:

[0096]

[0097] Therefore, based on the above analysis, the collector current satisfies the following relationship: 1) t sc During the period from t1 to t2, equation (2) represents the first transient current of the IGBT device; during the period from t1 to t2, equation (9) represents the second transient current of the IGBT device. Figure 6 This is a schematic diagram of an IGBT chip structure, C CG It is a capacitor placed between the collector and the gate; C CE It is a capacitor placed between the collector and emitter; C GE It is a capacitor placed between the gate and the emitter.

[0098] The present invention provides a method for determining the transient current of a type II short circuit in an IGBT device. After a type II short circuit occurs in the IGBT device, the method can determine the state of the collector current and the collector-emitter voltage, which has certain guiding significance for IGBT state detection.

[0099] This invention also provides a device for determining the Class II short-circuit transient current of an IGBT device, as described in the following embodiments. Since the principle by which this device solves the problem is similar to the method for determining the Class II short-circuit transient current of an IGBT device, the implementation of this device can refer to the implementation of the method for determining the Class II short-circuit transient current of an IGBT device, and repeated details will not be elaborated further.

[0100] like Figure 7 As shown, the device for determining the type II short-circuit transient current of the IGBT device includes:

[0101] The operating state determination module 701 is configured to determine the operating state of the IGBT device in response to determining that a type II short circuit has occurred in the IGBT device, wherein the operating state includes a saturation region and an active region;

[0102] The first transient current determination module 702 is configured to determine the first rate of change of the collector current of the IGBT device in response to the operating state being the saturation region, and to determine the first transient current of the IGBT device based on the first rate of change of the collector current.

[0103] The second transient current determination module 703 is configured to determine the second transient current of the IGBT device in response to the operating state being the active region, based on the control relationship between the gate-emitter voltage and the collector current.

[0104] In some optional embodiments of this example, the operating state determination module includes a short-circuit determination unit, which is configured as follows:

[0105] Determine whether the IGBT device is turned on;

[0106] In response to determining that the IGBT device is turned on, it is determined whether the first preset node and the second preset node of the half-bridge circuit are short-circuited.

[0107] In response to determining that a short circuit exists between the first preset node and the second preset node, it is determined that the IGBT device has experienced a type II short circuit.

[0108] In some optional embodiments of this example, the working state determination module includes a working state determination unit, which is configured as follows:

[0109] Obtain the output characteristic curve of the IGBT device;

[0110] Based on the output characteristic curve, determine the relationship between collector current and collector-emitter voltage;

[0111] In response to the collector current increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the saturation region;

[0112] In response to the fact that the collector current does not increase linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

[0113] In some optional embodiments of this example, the first transient current determination module includes a first rate of change determination unit for the collector current, and the first rate of change determination unit for the collector current is configured to:

[0114] The first rate of change of the collector current is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, and the parasitic inductance of the IGBT device package.

[0115] In some optional embodiments of this example, the transient current determination device further includes a gate-emitter voltage determination module, comprising:

[0116] The collector-emitter voltage change rate determination unit is configured to determine the collector-emitter voltage change rate before determining the second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current.

[0117] The gate-emitter voltage determination unit is configured to determine the gate-emitter voltage based on the control relationship between the collector-emitter voltage and the gate-emitter voltage and the rate of change of the collector-emitter voltage.

[0118] In some alternative embodiments of this example, the collector-emitter voltage rate-of-change determination unit is further configured as follows:

[0119] The rate of change of the collector-emitter voltage is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, the parasitic inductance of the IGBT device package, and the second rate of change of the collector current.

[0120] It should be noted that the method and apparatus for determining the type II short-circuit transient current of IGBT devices provided in this embodiment of the invention can be used in the field of power electronics, or in any technical field other than power electronics. This embodiment of the invention does not limit the application field of the method and apparatus for determining the type II short-circuit transient current of IGBT devices.

[0121] According to embodiments of this application, this application also provides an electronic device, a readable storage medium, and a computer program product.

[0122] An electronic device includes: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executed by the at least one processor to enable the at least one processor to perform the steps of a method for determining a type II short-circuit transient current of an IGBT device according to the foregoing embodiments.

[0123] A non-transient computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to perform the steps of a method for determining the type II short-circuit transient current of an IGBT device according to the foregoing embodiments.

[0124] A computer program product includes a computer program / instructions that, when executed by a processor, implement the steps of a method for determining the type II short-circuit transient current of an IGBT device according to the foregoing embodiments.

[0125] Figure 8A schematic block diagram of an example electronic device 900 that can be used to implement embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the present disclosure described and / or claimed herein.

[0126] like Figure 8 As shown, device 900 includes a computing unit 901, which can perform various appropriate actions and processes based on a computer program stored in read-only memory (ROM) 902 or a computer program loaded from storage unit 908 into random access memory (RAM) 903. RAM 903 may also store various programs and data required for the operation of device 900. The computing unit 901, ROM 902, and RAM 903 are interconnected via bus 904. Input / output (I / O) interface 905 is also connected to bus 904.

[0127] Multiple components in device 900 are connected to I / O interface 905, including: input unit 906, such as keyboard, mouse, etc.; output unit 907, such as various types of monitors, speakers, etc.; storage unit 908, such as disk, optical disk, etc.; and communication unit 909, such as network card, modem, wireless transceiver, etc. Communication unit 909 allows device 900 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks.

[0128] The computing unit 901 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 901 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 901 performs the various methods and processes described above, such as a method for determining the Class II short-circuit transient current of an IGBT device.

[0129] For example, in some embodiments, a method for determining the Class II short-circuit transient current of an IGBT device can be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 908. In some embodiments, part or all of the computer program can be loaded and / or installed on device 900 via ROM 902 and / or communication unit 909. When the computer program is loaded into RAM 903 and executed by computing unit 901, one or more steps of the method for determining the Class II short-circuit transient current of an IGBT device described above can be performed. Alternatively, in other embodiments, computing unit 901 can be configured to perform a method for determining the Class II short-circuit transient current of an IGBT device by any other suitable means (e.g., by means of firmware).

[0130] Various embodiments of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), application-specific standard products (ASSPs), systems-on-a-chip (SoCs), payload-programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various embodiments may include implementations in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which may be a dedicated or general-purpose programmable processor, capable of receiving data and instructions from a storage system, at least one input device, and at least one output device, and transmitting data and instructions to the storage system, the at least one input device, and the at least one output device.

[0131] The program code used to implement the methods of this disclosure may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing apparatus, such that when executed by the processor or controller, the program code causes the functions / operations specified in the flowcharts and / or block diagrams to be implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0132] In the context of this disclosure, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0133] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0134] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0135] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact via communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other. Servers can be cloud servers, servers in distributed systems, or servers incorporating blockchain technology.

[0136] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this disclosure can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this disclosure can be achieved, and this is not limited herein.

[0137] The specific embodiments described above do not constitute a limitation on the scope of protection of this disclosure. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A method for determining the type II short-circuit transient current of an IGBT device, characterized in that, include: In response to determining that a type II short circuit has occurred in the IGBT device, the operating state of the IGBT device is determined, wherein the operating state includes a saturation region and an active region; In response to the operating state being the saturation region, a first rate of change of the collector current of the IGBT device is determined, and a first transient current of the IGBT device is determined based on the first rate of change of the collector current. In response to the operating state being the active region, the second transient current of the IGBT device is determined based on the control relationship between the gate-emitter voltage and the collector current.

2. The transient current determination method according to claim 1, characterized in that, The steps to determine if a Type II short circuit has occurred in the IGBT device include: Determine whether the IGBT device is turned on; In response to determining that the IGBT device is turned on, it is determined whether the first preset node and the second preset node of the half-bridge circuit are short-circuited. In response to determining that a short circuit exists between the first preset node and the second preset node, it is determined that the IGBT device has experienced a type II short circuit.

3. The transient current determination method according to claim 1, characterized in that, The step of determining the operating state of the IGBT device includes: Obtain the output characteristic curve of the IGBT device; Based on the output characteristic curve, determine the relationship between collector current and collector-emitter voltage; In response to the collector current increasing linearly with the increase of the collector-emitter voltage, the operating state is determined to be the saturation region; In response to the fact that the collector current does not increase linearly with the increase of the collector-emitter voltage, the operating state is determined to be the active region.

4. The transient current determination method according to claim 1, characterized in that, Determining the first rate of change of the collector current of the IGBT device includes: The first rate of change of the collector current is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, and the parasitic inductance of the IGBT device package.

5. The transient current determination method according to claim 1, characterized in that, Before determining the second transient current of the IGBT device based on the control relationship between the gate-emitter voltage and the collector current, the transient current determination method further includes: Determine the rate of change of collector-emitter voltage; The gate-emitter voltage is determined based on the control relationship between the collector-emitter voltage and the gate-emitter voltage, as well as the rate of change of the collector-emitter voltage.

6. The method according to claim 5, characterized in that, Determining the rate of change of the collector-emitter voltage includes: The rate of change of the collector-emitter voltage is determined based on the DC bus voltage, the parasitic inductance of the first circuit, the parasitic inductance of the second circuit, the parasitic inductance of the IGBT device package, and the second rate of change of the collector current.

7. A device for determining the type II short-circuit transient current of an IGBT device, characterized in that, include: The operating state determination module is configured to determine the operating state of the IGBT device in response to determining that a type II short circuit has occurred in the IGBT device, wherein the operating state includes a saturation region and an active region; The first transient current determination module is configured to determine a first rate of change of the collector current of the IGBT device in response to the operating state being the saturation region, and to determine a first transient current of the IGBT device based on the first rate of change of the collector current. The second transient current determination module is configured to determine the second transient current of the IGBT device in response to the operating state being the active region, based on the control relationship between the gate-emitter voltage and the collector current.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method for determining the second type of short-circuit transient current of an IGBT device as described in any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the computer program implements the steps of the method for determining the second type of short-circuit transient current of an IGBT device as described in any one of claims 1 to 6.

10. A computer program product comprising a computer program / instructions, characterized in that, When the computer program / instruction is executed by the processor, it implements the steps of the method for determining the second type of short-circuit transient current of an IGBT device as described in any one of claims 1 to 6.

Images