Wafer plasma etching equipment
By setting gas feed holes on the edge of the heat table of the plasma etching equipment and adjusting the gas flow field, the problem of uneven etching in semiconductor processing is solved, and a more uniform etching effect is achieved.
CN119419113BActive Publication Date: 2025-03-21SHANGHAI BANGXIN SEMI TECHNOLOGY CO LTD
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Patent Information
- Application Number
- CN202510008751.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-03
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2045-01-03
AI Technical Summary
Technical Problem
In the plasma etching process in semiconductor processing, the prior art lacks effective adjustment means to control the etching rate and etching shape of the inner and outer regions of the wafer, resulting in uneven etching.
Method used
A wafer plasma etching device is designed. By opening several gas feed holes at the circumferential edge of the heat table, the pipeline assembly passes gas into the gas feed hole, and the gas blows to the wafer through the gas feed hole. The adjustment mechanism can adjust the gas speed or gas volume to control the influence range of the gas flow field.
Benefits of technology
The adjustment of the gas flow field above the wafer is achieved, ensuring the uniformity of etching and improving the control accuracy of etching rate and shape.
✦ Generated by Eureka AI based on patent content.
Abstract
The embodiment of the present specification provides a wafer plasma etching device, including: a hot table, a wafer is placed on the hot table, and a plurality of gas feed holes are opened at the circumferential edge of the hot table; a pipeline assembly, the pipeline assembly is used to pass gas into the plurality of gas feed holes; an adjustment mechanism, the adjustment mechanism can adjust the gas speed and / or gas volume blown to the wafer from the plurality of gas feed holes, so that the flow field above the wafer changes. By opening a plurality of gas feed holes at the circumferential edge of the hot table, the pipeline assembly passes gas into the gas feed holes, and the gas is blown to the wafer through the gas feed holes, the gas flow field above the wafer can be changed, and the gas speed or gas volume blown to the wafer from the gas feed holes can be adjusted by the adjustment mechanism, and the influence range of the gas can be controlled, thereby adjusting the gas flow field above the wafer and ensuring the uniformity of wafer etching.
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