Transistor based on light regulation and control and preparation method thereof
By intragallium zinc oxide layer, a photoelectric semiconductor layer with multiple regulation of light at different wavelengths was prepared, which solved the problem of single light response of traditional transistors, and realized the simulation of synaptic memory and forgetting. Neuromorphic calculations provide support.
Patent Information
- Application Number
- CN202411538377.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-02-11
AI Technical Summary
The existing three-terminal thin film transistors have preparation problems when implementing complex neural functions, and traditional transistors have a single response to light, which makes it impossible to effectively simulate artificial vision systems.
By adding silver nanoparticles into the indium gallium zinc oxygen layer, the photoelectric semiconductor layer is prepared using the plasmon resonance effect, multiple regulation of light at different wavelengths is realized, and transistors based on light regulation are constructed.
It realizes flexible regulation of light at different wavelengths, solves the problem of single light response in traditional transistors, simulates the memory and forgetting functions of synapses, and provides a material basis for neuromorphic calculations.
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Figure CN119421509A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of microelectronic material devices, and in particular to a transistor based on light regulation and a preparation method thereof. Background Art
[0002] The traditional von Neumann architecture is the foundation of modern computers. It physically separates storage and computing. This architecture requires extracting the data to be calculated from the memory and transferring it to the computing unit, and then transferring the processing results back to the memory. Such operations increase energy consumption and processing time, and limit data transmission efficiency. With the vigorous development of artificial intelligence technology, today's society has higher requirements for efficient and fast processing of complex data. The von Neumann architecture can no longer meet the high-speed needs of information development. Therefore, it is necessary to provide a high-performance artificial brain-like computing system to cope with the growing amount of data and intelligence requirements.
[0003] According to existing literature, the human brain consists of about 10 11 neurons and about 10 15 synapses, with the advantages of high efficiency, low power consumption and autonomous cognition; based on these characteristics, the neuromorphic computing system developed by the human brain is considered to be an ideal way to achieve efficient artificial intelligence because of its advantages such as high parallelism and ultra-low power consumption. The information obtained by the visual organs accounts for more than 80% of the human body's information. Vision is of great significance in rapid information screening, cognitive learning, etc.; compared with electrical signals, optical signals have the advantages of fast transmission and high bandwidth. Therefore, it is very necessary to use optoelectronic synaptic devices to build an effective artificial vision system.
[0004] Artificial synaptic devices can generally be divided into two-terminal memristor type and three-terminal transistor type in terms of structure. In the past few decades, in the field of neural synapse simulation, there have been a variety of material systems and different response mechanisms for two-terminal devices; although the existing two-terminal devices have shown excellent capabilities in basic neural functions, there is a problem that more complex neural functions cannot be realized, which means that multi-terminal devices are needed to perform more complex functions. However, most of the current three-terminal thin-film transistors are based on two-dimensional materials, which are limited by the preparation method of mechanical peeling, greatly limiting the manufacture of hardware-based artificial neural network synaptic arrays. In addition, all-optical control technology is a technology that uses optical signals for data transmission and processing; in order to eliminate the need for mixed optoelectronic signals and simplify the configuration of external stimuli, it is urgent for relevant R&D personnel in this field to design an artificial neural synapse device solution based on three-terminal thin-film transistors prepared using all-optical control technology. Summary of the invention
[0005] The purpose of the present invention is to provide a transistor based on light regulation and a method for preparing the same to solve the above-mentioned problems in the background technology. The present invention utilizes the plasmon resonance effect and prepares a photoelectric semiconductor layer by doping silver nanoparticles into an indium gallium zinc oxide layer, thereby obtaining a semiconductor device that has different regulation on light of different wavelengths, thereby solving the problem that the indium gallium zinc oxide transistor has a single response to light.
[0006] To achieve the above object, the present invention provides the following technical solutions:
[0007] One of the technical solutions of the present invention is to provide a transistor structure based on light regulation, wherein the transistor includes the following parts arranged in sequence from bottom to top:
[0008] A gate electrode layer, a gate insulating layer, a photoelectric semiconductor layer and a source-drain electrode layer;
[0009] The photoelectric semiconductor layer is an indium gallium zinc oxygen doped silver nanoparticle composite film.
[0010] Preferably, the gate electrode layer is P-type highly doped silicon.
[0011] Preferably, the gate insulating layer is a hafnium oxide film with a thickness of 15-25 nm.
[0012] Preferably, the thickness of the InGaZnO-doped Silver nanoparticle composite film is 50-80 nm.
[0013] Preferably, the source-drain electrode layer is made of molybdenum (Mo), tungsten (W) or gold (Au).
[0014] The second technical solution of the present invention is to provide a method for preparing the above-mentioned transistor based on light regulation, comprising the following steps:
[0015] A gate insulating layer, a photoelectric semiconductor layer and a source-drain electrode layer are sequentially deposited on the gate electrode layer, and annealed to obtain the light-regulated transistor.
[0016] Preferably, the gate insulating layer is deposited by magnetron sputtering or atomic layer deposition; the photoelectric semiconductor layer is deposited by magnetron sputtering or pulsed laser deposition; and the source-drain electrode layer is deposited by magnetron sputtering or thermal evaporation.
[0017] Preferably, the annealing temperature is 300-400° C., the time is 30-60 min, and the atmosphere is a protective atmosphere.
[0018] Preferably, the protective atmosphere is argon or nitrogen.
[0019] The third technical solution of the present invention is to provide an application of the above-mentioned light-controlled transistor in the field of photosensitive semiconductors.
[0020] When a certain gate voltage and source-drain voltage are applied, the silver nanoparticles in the photoelectric semiconductor layer can be ionized under green light, and the electrons enter the conduction band, increasing the conductivity of the photoelectric semiconductor layer; when the photoelectric semiconductor layer is exposed to ultraviolet light, the electrons in the oxygen valence band of InGaZn are excited, reducing Ag ions and reducing the conductivity of the photoelectric semiconductor layer.
[0021] The beneficial technical effects of the present invention are as follows:
[0022] In order to realize artificial synaptic simulation of visual signals on a three-terminal device, the present invention proposes a research method of a transistor based on light regulation.
[0023] The present invention utilizes the plasmon resonance effect to prepare a photoelectric semiconductor layer by doping silver nanoparticles into the indium gallium zinc oxide layer, thereby obtaining a semiconductor device that has different control over light of different wavelengths, thus solving the problem that the indium gallium zinc oxide transistor has a single response to light. Under the irradiation of green light (530-550nm), the silver nanoparticles in the photoelectric semiconductor layer can be oxidized to Ag + , electrons enter the conduction band, thereby increasing the conductivity of the semiconductor layer; under ultraviolet light (370-390nm), the electrons in the valence band of the indium gallium zinc oxide (IGZO) of the photoelectric semiconductor layer will be excited by ultraviolet light and jump to the conduction band to reduce Ag + , which reduces the conductivity of the semiconductor layer. The increase and decrease of the conductivity of the semiconductor layer is manifested as the increase and decrease of the postsynaptic current, which can simulate the memory and forgetting of synapses and provide a material basis for neuromorphic computing. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0025] Figure 1 Schematic diagram of the structure of the light-controlled transistor in Example 1.
[0026] Figure 1 In the figure, 101 is a gate electrode layer; 102 is a gate insulating layer; 103 is a photoelectric semiconductor layer; 104 is silver nanoparticles; and 105 is a source-drain electrode layer.
[0027] Figure 2 This is a flow chart of the preparation method based on light-controlled transistor in Example 1.
[0028] Figure 3This is the conductivity change result of the light-regulated transistor under green light irradiation in Example 1.
[0029] Figure 4 This is the conductivity change result of the light-regulated transistor under the action of ultraviolet light in Example 1.
[0030] Figure 5 This is the absorption spectrum result diagram of the product of Comparative Example 1-2 and the transparent quartz substrate in Comparative Example 1.
[0031] Figure 6 This is the XPS test result diagram of the InGaZnO-doped silver nanoparticle composite film in Comparative Example 1. DETAILED DESCRIPTION
[0032] Now, various exemplary embodiments of the present invention are described in detail, and this detailed description should not be considered as a limitation of the present invention, but should be understood as a more detailed description of certain aspects, characteristics and embodiments of the present invention. It should be understood that the terms described in the present invention are only for describing specific embodiments and are not used to limit the present invention.
[0033] In addition, for the numerical range in the present invention, it is understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. The intermediate value in any stated value or stated range, and each smaller range between any other stated value or intermediate value in the range is also included in the present invention. The upper and lower limits of these smaller ranges can be independently included or excluded in the scope.
[0034] Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which the invention pertains. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein may also be used in the practice or testing of the present invention.
[0035] The words “include,” “including,” “have,” “contain,” etc. used in the present invention are open-ended terms, meaning including but not limited to.
[0036] The present invention provides a method for preparing a transistor based on light regulation, comprising the following steps:
[0037] A gate insulating layer, a photoelectric semiconductor layer and a source-drain electrode layer are sequentially deposited on the gate electrode layer, and annealed to obtain the light-regulated transistor.
[0038] Furthermore, in the process of preparing a transistor based on light regulation, the present invention first uses atomic layer deposition technology to deposit a high dielectric HfO2 film as a gate insulating layer on a P-type highly doped silicon substrate, and then deposits an indium gallium zinc oxygen doped silver nanoparticle composite film on the HfO2 film, and finally uses magnetron sputtering technology to prepare Mo electrodes as the source and drain of the transistor.
[0039] The P-type highly doped Si substrate used in the following embodiments and comparative examples of the present invention is a highly B-doped P-type silicon substrate purchased from Hefei Kejing, and has a thickness of 0.5 mm.
[0040] All raw materials used in the following examples and comparative examples of the present invention are commercially available products. Detailed steps and parameters not explained in the following examples of the present invention can be adopted by conventional methods in the art.
[0041] Example 1
[0042] A method for preparing a transistor based on light regulation, the steps are as follows:
[0043] (1) Preparation of gate electrode layer: Cut the P-type highly doped Si substrate into 12 mm*12 mm pieces, and then ultrasonically clean it in the order of trichloroethylene, acetone, ethanol, and deionized water, with an ultrasonic power of 40 W for 5 min. Then, blow dry it with gas and pack it in a box for later use.
[0044] (2) Deposition of gate insulating layer: tetra(bis(methylethylamino)hafnium) was selected as the hafnium source and water was selected as the oxygen source. Atomic layer deposition technology was used to deposit a 15 nm thick HfO2 film on the substrate obtained in step (1). The parameters of the atomic layer deposition technology were: deposition temperature 150° C. and deposition cycles 150 times.
[0045] (3) Deposition of photoelectric semiconductor layer: A 50 nm thick InGaZnO-doped silver nanoparticle composite film was prepared by co-sputtering, wherein the InGaZnO target material had a ratio of In2O3:Ga2O3:ZnO=1:1:1at%, and the InGaZnO target material was sputtered at 80W; the purity of the Ag target material was 99.99%, and the Ag target material was sputtered at 30W. During the co-sputtering process, the growth pressure was set to 0.8 Pa, the argon flux was 14 mL / min, the oxygen flux was 1 mL / min, and the deposition time was 10 min.
[0046] (4) Deposition of Mo as source and drain: 15 nm Mo source and drain electrodes were deposited using magnetron sputtering technology. The purity of the Mo target was 99.99%. The Mo target was sputtered using a 30 W DC sputtering process. The deposition time was 10 min and the growth pressure was 0.4 Pa.
[0047] (5) Post-annealing: The product obtained in step (4) is post-annealed in a tubular furnace to obtain a light-controlled transistor; the annealing atmosphere is nitrogen, the temperature is 350° C., and the time is 30 min.
[0048] Comparative Example 1
[0049] A 50nm thick InGaZnO-doped silver nanoparticle composite film was prepared on a transparent quartz substrate by co-sputtering, wherein the InGaZnO target material had an In2O3:Ga2O3:ZnO ratio of 1:1:1at%, and the InGaZnO target material was sputtered at 80W; the purity of the Ag target material was 99.99%, and the Ag target material was sputtered at 30W. During the co-sputtering process, the growth pressure was set to 0.8Pa, the argon flux was 14mL / min, the oxygen flux was 1mL / min, and the deposition time was 10min; the final product was recorded as (IGZO@Ag).
[0050] Comparative Example 2
[0051] A 50nm thick indium gallium zinc oxide film was prepared on a transparent quartz substrate, wherein the indium gallium zinc oxide target material had an In2O3:Ga2O3:ZnO ratio of 1:1:1at%, and the indium gallium zinc oxide target material was deposited using an 80W RF sputtering process for 10min. During the sputtering process, the growth pressure was set to 0.8Pa, the argon flux was 14mL / min, and the oxygen flux was 1mL / min; the final product was recorded as (IGZO).
[0052] Figure 1 Schematic diagram of the structure of the light-controlled transistor in Example 1.
[0053] Figure 1 In the figure, 101 is a gate electrode layer; 102 is a gate insulating layer; 103 is a photoelectric semiconductor layer; 104 is silver nanoparticles; and 105 is a source-drain electrode layer.
[0054] Figure 2 This is a flow chart of the preparation method based on light-controlled transistor in Example 1.
[0055] Effect verification 1
[0056] The performance of the product of Example 1 was measured using a precision source meter, a xenon lamp light source and a filter. During the test, a 2V forward voltage was applied to the P-type highly doped silicon substrate, a 0.5V positive voltage was applied to the drain, and the source was grounded. The device conductivity change was tested by irradiating for 10s and then shutting off for 90s. During this period, a xenon lamp light source was used with a green light filter to perform a green light irradiation test (the test wavelength was 530-550nm, and the light intensity was 60mW / cm 2), using xenon lamp light source with UV filter for UV irradiation test (test wavelength 370-390nm, light intensity 40mW / cm 2 ). Specific experimental test results are as follows Figure 3 and Figure 4 shown.
[0057] Figure 3 This is the conductivity change result of the light-regulated transistor under green light irradiation in Example 1.
[0058] like Figure 3 As shown, under the condition of green light irradiation test, the conductivity of the device can be gradually increased.
[0059] Figure 4 This is the conductivity change result of the light-regulated transistor under the action of ultraviolet light in Example 1.
[0060] like Figure 4 As shown, under the conditions of ultraviolet light irradiation test, the conductivity of the device can be gradually reduced.
[0061] Depend on Figure 3-4 It can be seen that after applying green light multiple times, the source-drain current read increases in a step-by-step manner; after applying ultraviolet light multiple times, the source-drain current read decreases in a step-by-step manner.
[0062] The absorption spectrum can prove the influence of other colors of light on the transistor. The present invention has conducted absorption spectrum test on the products of comparative examples 1-2 and the transparent quartz substrate in comparative example 1 (referred to as substrate). The results are as follows: Figure 5 shown.
[0063] Figure 5 This is the absorption spectrum result diagram of the product of Comparative Example 1-2 and the transparent quartz substrate in Comparative Example 1.
[0064] Different colors of light mainly involve the competition between "the increase of photogenerated electrons" and "the reduction of Ag nanoparticles". Figure 5 As shown in the figure, after the indium gallium zinc oxide film is doped with silver nanoparticles, it has obvious absorption peaks in the green light band and the ultraviolet light band. In this test, the absorption intensity of the substrate has been extremely low, which shows that the absorption test of the two samples of IGZO@Ag and IGZO is effective.
[0065] The in-situ XPS characterization test was performed under the assistance of UPS ultraviolet light. The sample was first tested by XPS, then irradiated with UPS ultraviolet light for 1 minute, and then tested by XPS again. The XPS results were peak fitted by comparing the binding energy data of Ag atoms and Ag ions in XPS analysis.
[0066] Figure 6This is the XPS test result diagram of the InGaZnO-doped silver nanoparticle composite film in Comparative Example 1.
[0067] like Figure 6 As shown, after 1 minute of UV irradiation, the intensity of the silver atom peak increased significantly, proving that a large amount of silver ions were reduced to silver atoms during the 1 minute UV irradiation.
[0068] The embodiments described above are only descriptions of the preferred modes of the present invention, and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the protection scope determined by the claims of the present invention.
Claims
1. A transistor based on light regulation, characterized in that: The transistor includes the following parts arranged in order from bottom to top: A gate electrode layer, a gate insulating layer, a photoelectric semiconductor layer and a source-drain electrode layer; The photoelectric semiconductor layer is an indium gallium zinc oxygen doped silver nanoparticle composite film.
2. The light-controlled transistor according to claim 1, characterized in that: The gate electrode layer is P-type highly doped silicon.
3. The light-controlled transistor according to claim 1, characterized in that: The gate insulating layer is a hafnium oxide film with a thickness of 15-25 nm.
4. The light-controlled transistor according to claim 1, characterized in that: The thickness of the indium gallium zinc oxygen doped silver nanoparticle composite film is 50-80nm.
5. The light-controlled transistor according to claim 1, characterized in that: The source-drain electrode layer is composed of molybdenum, tungsten or gold.
6. A method for preparing a light-controlled transistor according to any one of claims 1 to 5, characterized in that: The following steps are involved: A gate insulating layer, a photoelectric semiconductor layer and a source-drain electrode layer are sequentially deposited on the gate electrode layer, and annealed to obtain the light-regulated transistor.
7. The preparation method according to claim 6, characterized in that: The gate insulating layer is deposited by magnetron sputtering or atomic layer deposition; the photoelectric semiconductor layer is deposited by magnetron sputtering or pulsed laser deposition; the source-drain electrode layer is deposited by magnetron sputtering or thermal evaporation.
8. The preparation method according to claim 6, characterized in that: The annealing temperature is 300-400° C., the time is 30-60 min, and the atmosphere is a protective atmosphere.
9. Application of the light-regulated transistor according to any one of claims 1 to 5 in the field of photosensitive semiconductors.