Spinning electronic device and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor devices, in particular to a spinning electronic device and a preparation method thereof. The spinning electronic device comprises a substrate, and a magnetic film, a semiconductor film and a heavy metal electrode which are sequentially formed on the substrate, wherein the semiconductor film comprises a perovskite film, the material of the perovskite film comprises organic-inorganic hybrid perovskite, and monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms. Compared with deuterium-free organic-inorganic hybrid perovskite, the deuterated organic-inorganic hybrid perovskite not only shows longer carrier lifetime, but also can obtain longer magneton diffusion length as a non-ferromagnetic spacer material, so that a spin electronic device containing the semiconductor film has good magneton transport capability.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor devices, and in particular, relates to a spin electronic device and a method for preparing the same. Background Art

[0002] Spintronic devices are devices that introduce spin properties into semiconductors and use electron charge and spin as information carriers. For a long time, spintronic devices have been based on the spin transport and spin dynamics effects of "magnetic / non-magnetic" multilayer thin film systems or "magnetic / non-magnetic heavy metal" heterojunction systems.

[0003] Organic-inorganic hybrid perovskites (OIHPs) exhibit rich spin properties, but their heterojunction design and preparation are complex and tedious, and the magnon transport in spintronic devices is not ideal. Therefore, current organic-inorganic hybrid perovskites are difficult to be well applied in spintronic devices. Summary of the invention

[0004] The purpose of the present application is to provide a spin electronic device and a preparation method thereof, aiming to solve the technical problem of how to improve the magnetic oscillator transmission capability of a spin electronic device using organic-inorganic hybrid perovskite as a spin semiconductor material.

[0005] In order to achieve the above application purpose, the technical solution adopted in this application is as follows:

[0006] In a first aspect, the present application provides a spin electronic device, comprising: a substrate, and a magnetic film, a semiconductor film and a heavy metal electrode formed in sequence on the substrate; wherein the semiconductor film comprises a perovskite film, the material of the perovskite film comprises an organic-inorganic hybrid perovskite, and the monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms.

[0007] In some embodiments, the monovalent organic cation comprises CH3ND3 + and CH(ND2)2 + At least one of , wherein D is a deuterium atom.

[0008] In some embodiments, the general formula of the organic-inorganic hybrid perovskite is ABX3; wherein A includes CH3ND3 + and CH(ND2)2 + At least one of, B is a divalent metal cation, and X is a monovalent anion.

[0009] In some embodiments, the organic-inorganic hybrid perovskite includes at least one of CH3ND3PbI3, CH3ND3PbBr3, and CH(ND2)2PbBr3.

[0010] In some embodiments, the semiconductor film has a thickness of 80-400 nm.

[0011] In some embodiments, the substrate comprises a gadolinium gallium garnet substrate;

[0012] and / or, the magnetic film comprises a yttrium iron garnet film;

[0013] And / or, the heavy metal electrode comprises a platinum electrode.

[0014] In a second aspect, the present application provides a method for preparing a spintronic device, comprising:

[0015] preparing a magnetic film on a substrate;

[0016] Preparing a semiconductor film on the magnetic film; wherein the material of the semiconductor film comprises an organic-inorganic hybrid perovskite, and the monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms;

[0017] A heavy metal electrode is prepared on the semiconductor film.

[0018] In some embodiments, the step of preparing a semiconductor film on the magnetic film comprises:

[0019] Dissolving methylammonium halide or formamidine halide in heavy water, and then drying to obtain deuterated methylammonium halide or deuterated formamidine halide; wherein the deuterium atom in the deuterated methylammonium halide is combined with a nitrogen atom, and the deuterium atom in the deuterated formamidine halide is combined with a nitrogen atom;

[0020] Dissolving the deuterated methylammonium halide or deuterated formamidine halide and a divalent metal halide in an organic solvent to obtain a precursor solution;

[0021] Spin coating the precursor solution on the magnetic film, and then annealing to generate organic-inorganic hybrid perovskite to obtain the semiconductor film;

[0022] In some embodiments, the molar ratio of the methylammonium halide or the formamidine halide to the heavy water is 1: (20-50);

[0023] And / or, the drying temperature is 50-70°C.

[0024] In some embodiments, the precursor solution is spin-coated on the magnetic film at a speed of 2000 to 10000 r / s;

[0025] And / or, the annealing treatment temperature is 140-160°C.

[0026] The first aspect of the present application provides a spintronic device, in which the semiconductor film in the magnetic insulator / spin semiconductor / heavy metal heterostructure uses a deuterium-containing organic-inorganic hybrid perovskite material. Compared with the organic-inorganic hybrid perovskite (H-OIHP) without deuterium, i.e., conventional hydrogen atoms, the deuterated organic-inorganic hybrid perovskite (D-OIHP) not only shows a longer carrier lifetime, but also, as a non-ferromagnetic spacer material, can obtain a longer magnon diffusion length, thereby making the spintronic device containing the semiconductor film have a good magnon transport capability.

[0027] The preparation method provided in the second aspect of the present application prepares a semiconductor film containing deuterated organic-inorganic hybrid perovskite between the magnetic film and the heavy metal electrode. Based on the isotope effect of the semiconductor film, the magnetic oscillator transport capacity can be well adjusted. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0029] Figure 1 It is a structural schematic diagram of a spin electronic device provided in an embodiment of the present application;

[0030] Figure 2 1 is a graph showing the test results of a spin electronic device provided in an embodiment of the present application; wherein (a) is an electron microscope image of a cross section of a spin electronic device, (b) is a photoluminescence spectrum of a spin electronic device, and (c) is a curve showing the relationship between the voltage of the spin electronic device and the thickness of a deuterated organic-inorganic hybrid perovskite film. DETAILED DESCRIPTION

[0031] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0032] In this application, the term "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0033] In the present application, "at least one" means one or more, "more than one" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items.

[0034] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution, some or all of the steps can be executed in parallel or sequentially, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0035] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0036] The weight of the relevant components mentioned in the embodiment description of the present application can not only refer to the specific content of each component, but also represent the proportional relationship between the weights of the components. Therefore, as long as the content of the relevant components is proportionally enlarged or reduced according to the embodiment description of the present application, it is within the scope disclosed in the embodiment description of the present application. Specifically, the mass described in the embodiment description of the present application can be a mass unit known in the chemical industry such as μg, mg, g, kg, etc.

[0037] The terms "first" and "second" are used only for descriptive purposes to distinguish objects such as substances from each other, and should not be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. For example, without departing from the scope of the embodiments of the present application, the first XX may also be referred to as the second XX, and similarly, the second XX may also be referred to as the first XX. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0038] Organic-inorganic hybrid perovskites exhibit rich spin properties, and the electron spin transport parameters of most organic-inorganic hybrid perovskite films are comparable to those of traditional semiconductors such as silicon, and are superior to organic semiconductors. However, due to the complex and cumbersome design and preparation methods of organic-inorganic hybrid perovskite-based heterojunctions, its application research on the Spin Seebeck Effect (SSE) is relatively lacking.

[0039] Based on this, the present invention constructs a new spin valve design idea of ​​magnetic insulator / non-ferromagnetic spacer / heavy metal body, takes deuterium-containing organic-inorganic hybrid perovskite film as the research object, uses magnetic film as the source of magnon, and uses isotope engineering to prove the unique effect of hyperfine interaction (HFI) in the spin valve structure. By comparing the protonated (H - ) and deuterated (D - ) Spin Seebeck coefficient (σ) of organic-inorganic hybrid perovskite films SSE ) and magnon diffusion length (λs), confirming that isotope hyperfine interaction plays an important role in magnon transport in organic-inorganic hybrid perovskite. The specific technical solution is as follows.

[0040] In a first aspect, the present application provides a spintronic device. The spintronic device includes: (1) a substrate; (2) a magnetic film, which may be a non-local ferromagnetic insulator; (3) a semiconductor film, which has spin properties, including a perovskite film, wherein the material of the perovskite film includes an organic-inorganic hybrid perovskite, and the monovalent organic cation in the organic-inorganic hybrid perovskite contains a deuterium atom; (4) a heavy metal electrode.

[0041] The spin electronic device of the embodiment of the present application has a magnetic insulator / spin semiconductor / heavy metal heterostructure, wherein the semiconductor film uses a deuterium-containing organic-inorganic hybrid perovskite material. Compared with the organic-inorganic hybrid perovskite without deuterium, i.e., conventional hydrogen atoms, the deuterated organic-inorganic hybrid perovskite not only shows a longer carrier lifetime, but also, as a non-ferromagnetic spacer material, can obtain a longer magnon diffusion length, thereby enabling the spin electronic device containing the semiconductor film to have a good magnon transport capability.

[0042] In some embodiments, the chemical formula of the organic-inorganic hybrid perovskite material can be ABX3; wherein A is a monovalent organic cation containing a deuterium atom (represented by D or 2H), B is a divalent metal cation, and X is a monovalent anion.

[0043] Specifically, the divalent metal cation of B may include Pb 2+ Sn 2+ At least one of the monovalent anions of X may be halogen ions, including Cl - Br - and I - At least one of .

[0044] Specifically, the monovalent organic cation of A can be a deuterated formamidine ion or a deuterated methylamine ion. For example, CH3ND3 + and CH(ND2)2 +At least one of , wherein D is a deuterium atom, that is, a deuterium atom is combined with a nitrogen atom.

[0045] In some embodiments, the deuterated organic-inorganic hybrid perovskite includes at least one of CH3ND3PbI3, CH3ND3PbBr3, and CH(ND2)2PbBr3.

[0046] Taking deuterated organic-inorganic hybrid perovskite CH3ND3PbBr3 as an example, the perovskite film composed of it can be represented by D-MAPbBr3 thin film. As a non-ferromagnetic spacer, D-MAPbBr3 thin film obtains a long magnon diffusion length (about 120.3nm) at room temperature (generally 25-30°C), so it has great application as a magnon material in the spin electronic device of the embodiment of the present application.

[0047] In some embodiments, the thickness of the semiconductor film in the spintronic device is 80-400 nm, for example, 80 nm, 85 nm, 9 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, etc.

[0048] In some embodiments, the substrate of the spintronic device may be gadolinium gallium garnet (Gd3Ga5O 12 , abbreviated as GGG) single crystal substrate or silicon single crystal substrate, a GGG substrate is selected in one embodiment of the present application.

[0049] In some embodiments, the magnetic film of the spintronic device can be a non-local ferromagnetic insulator film. Specifically, it can be a ferromagnetic metal film, such as a film formed by Fe, Co, Ni, and their alloys; it can be a ferrimagnetic insulator, such as garnet ferrite / yttrium iron garnet (Y3Fe5O 12 , abbreviated as YIG), spinel ferrite or magnetoplumbite ferrite, etc.; it can also be a magnetic semiconductor film, such as a film formed by gallium manganese arsenic (GaMnAs), etc. In one embodiment of the present application, a YIG film is selected.

[0050] In some embodiments, the heavy metal electrode of the spintronic device is a material with strong spin-orbit coupling, which can be a single substance such as Pt, W, Ta, Bi, Au, Ag, Al, etc. In one embodiment of the present application, a platinum electrode is selected.

[0051] by Figure 1For example, in a spintronic device: the substrate material is GGG; the magnetic film material is YIG; the semiconductor film material is OIHP, in which the monovalent organic cation contains deuterium; the heavy metal electrode material is Pt. Through laser induction, the thermal gradient on the YIG layer based on the spin Seebeck effect (SSE) generates magnons, which diffuse to form magnon currents. The magnons are injected into the adjacent OIHP film for transport, and after detection, they can be converted into voltage through the inverse spin Hall effect (ISHE). Because the monovalent organic cations in the OIHP film contain deuterium, the transport of magnons can be well regulated.

[0052] In a second aspect, the present invention provides a method for preparing a spintronic device. The method comprises the following steps:

[0053] S01: preparing a magnetic film on a substrate;

[0054] S02: preparing a semiconductor film on the magnetic film; wherein the material of the semiconductor film includes an organic-inorganic hybrid perovskite, and the monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms;

[0055] S03: Prepare heavy metal electrodes on semiconductor films.

[0056] In the embodiment of the present application, a semiconductor film containing deuterated organic-inorganic hybrid perovskite is prepared between the magnetic film and the heavy metal electrode. Based on the isotope effect of the semiconductor film, the magnetic oscillator transport capacity can be well adjusted.

[0057] In some embodiments, the substrate can be a GGG single crystal substrate or a silicon single crystal substrate. The magnetic film can be a ferromagnetic metal film (such as a film formed by Fe, Co, Ni and their alloys), a ferrimagnetic insulator (such as garnet ferrite / yttrium iron garnet, spinel ferrite or magnetoplumbite ferrite) or a magnetic semiconductor film (such as arsenic manganese gallium). The heavy metal electrode can be a single substance such as Pt, W, Ta, Bi, etc. The perovskite film material can be an organic-inorganic hybrid perovskite material ABX3; wherein A is a monovalent organic cation containing a deuterium atom (represented by D or 2H), B is a divalent metal cation, and X is a monovalent anion.

[0058] In some embodiments, the step of preparing a semiconductor film on a magnetic film includes:

[0059] Dissolve methylammonium halide (or formamidinium halide) in heavy water, and then dry it to obtain deuterated methylammonium halide (or deuterated formamidinium halide); wherein the deuterium atom in the deuterated methylammonium halide is combined with the nitrogen atom (the deuterium atom in the deuterated formamidinium halide is combined with the nitrogen atom); dissolve the deuterated methylammonium halide (or deuterated formamidinium halide) and a divalent metal halide in an organic solvent to obtain a precursor solution; spin-coat the precursor solution on a magnetic film, and then anneal it to generate an organic-inorganic hybrid perovskite, thereby obtaining a semiconductor film, i.e., a perovskite film.

[0060] By the above steps of preparing a semiconductor film on a magnetic film, a deuterated monovalent organic cation CH3ND3 can be prepared. + or CH(ND2)2 + Organic-inorganic hybrid perovskite films.

[0061] In some embodiments, when methylammonium halide (or formamidinium halide) is dissolved in heavy water, the molar ratio of methylammonium halide to heavy water is 1:(20-50), or the molar ratio of formamidinium halide to heavy water is 1:(20-50); by using excess heavy water, the active H bound to the nitrogen atom in the methylammonium halide or formamidinium halide can be replaced by deuterium (D) as much as possible.

[0062] In some embodiments, methylammonium halide (or formamidine halide) is dissolved in heavy water and evaporated to dryness at 50-70°C.

[0063] The precursor solution contains a halide salt corresponding to a deuterated monovalent organic cation (such as a deuterated methylammonium halide or a deuterated formamidine halide), a divalent metal halide (such as a lead halide or a tin halide), and the organic solvent may include at least one of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).

[0064] In some embodiments, the precursor solution is spin-coated on the magnetic film at a speed of 2000 to 10000 r / s. Perovskite films of different thicknesses can be obtained by controlling the spin-coating speed of the precursor solution, and a perovskite film of 80 to 400 nm can be obtained under the above speed conditions.

[0065] In some embodiments, the annealing temperature is 140-160° C. Through the above temperature annealing, the organic solvent in the precursor solution is volatilized, and the precursor material synthesizes deuterated organic-inorganic hybrid perovskite. For example, the perovskite film can be obtained by annealing at a temperature of 140-160° C. for 10-20 minutes.

[0066] The above-mentioned preparation method of the embodiment of the present application converts the hydrogen atoms ( 1 H) is replaced by a deuterium atom (D or 2H), Regulating magnon transport in semiconductor films of organic-inorganic hybrid perovskite via the isotope effect.

[0067] The following describes the invention in conjunction with specific embodiments.

[0068] Example 1

[0069] A spin electronic device comprises a gadolinium gallium garnet (GGG) substrate, a yttrium iron garnet (YIG) film, a deuterated organic-inorganic hybrid perovskite (D-OIHP) film, and a platinum (Pt) electrode in sequence.

[0070] The method for preparing the spin electronic device of this embodiment comprises the following steps:

[0071] (1) Yttrium iron garnet film preparation

[0072] Use an analytical balance to weigh Y(NO3)3·6H2O and Fe(NO3)3·9H2O powders in a stoichiometric molar ratio of 3:5; and dissolve them in DMF. The dissolved yttrium iron garnet precursor solution was stirred at room temperature for 24 hours, then the solution was filtered and polyvinyl pyrrolidone (PVP) was added at a PVP amount of 0.5g / mL, and stirred again at room temperature for 24 hours. The solution was then spin-coated on a GGG substrate (spin coating speed of 6000rpm, 80s), and baked at 150℃ for 3min to remove residual solvent. Finally, the sample was annealed at 800℃ for 10 hours to obtain a YIG film.

[0073] (2) Preparation of deuterated organic-inorganic hybrid perovskite films

[0074] Synthesis of deuterated MABr (CH3ND3Br): MABr was dissolved in excess heavy water (D2O, 99.9% D) (the molar ratio of MABr to heavy water was 1:40), and the solvent was dried by rotary evaporation at 60 °C after stirring. This process was repeated four times to ensure that the active H atoms bound to N were replaced by D atoms as much as possible.

[0075] Preparation of deuterated MAPbBr3 precursor solution: Use an analytical balance to weigh deuterated MABr, PbBr2, and PbCl2 powders in a chemical molar ratio of 1:1:0.2, dissolve them in a mixed solvent (composed of DMF and DMSO in a volume ratio of 0.95:0.05), stir at room temperature in a glove box, and filter with a polytetrafluoroethylene filter (size 0.22μm) before use to obtain a deuterated MAPbBr3 precursor solution.

[0076] Preparation of deuterated organic-inorganic hybrid perovskite film (one-step method): The above deuterated MAPbBr3 precursor solution was spin-coated on a YIG / GGG substrate, ethyl acetate was used as an antisolvent, and annealed at 150°C for 10 min. Deuterated organic-inorganic hybrid perovskite films of different thicknesses were obtained by controlling the spin-coating speed and acceleration (samples were labeled 1#, 2#, 3#, 4#, and 5#, as shown in Table 1).

[0077] Table 1 Thickness of D-OHIP film

[0078]

[0079] (3) Preparation of platinum electrodes

[0080] The above-mentioned deuterated organic-inorganic hybrid perovskite film sample was transferred to a pulsed laser deposition device to prepare a Pt film at room temperature, wherein the laser intensity was 200 mJ, the coating time was 3 min, and the substrate-target distance was 5 cm.

[0081] Performance Testing

[0082] The cross-sectional image of the spin electronic device prepared in Example 1 of the present application is as follows: Figure 2 As shown in (a), the thicknesses of the Pt / OIHP / YIG / GGG film layers are approximately 20 nm, 86 nm (corresponding to 1# in Table 1), 340 nm, and 0.5 mm, respectively.

[0083] The fluorescence photoluminescence data of the spintronic device corresponding to sample 1# in Table 1 are as follows: Figure 2 As shown in (b), compared with conventional H-MAPbBr3 (deuterium-free), the deuterated organic-inorganic hybrid perovskite film of isotope-substituted D-MAPbBr3 in the spintronic device prepared in Example 1 of the present application has a longer carrier lifetime (extended from 297.54ns to 366.74ns). Based on the fact that magnons are generated by the thermal gradient on the SSE-based YIG layer, these diffuse to form magnon currents, which are then injected into the adjacent D-OIHP film. When the spin current (J S ) reaches the Pt layer, it can be converted into voltage through the inverse spin Hall effect (ISHE). The generated electromotive force (E ISHE ) can be expressed as: Where D ISHE is the ISHE efficiency, σ is the spin polarization vector. ISHE ) to detect the spin current. In this structure, the black insulating tape can help generate a stable out-of-plane temperature gradient; the temperature difference (ΔT) can be obtained by using a Pt100# resistor.

[0084] In the present embodiment, the thickness of the organic-inorganic hybrid perovskite film (d OIHP ) to measure the V of H-MAPbBr3 and D-MAPbBr3 samples at different ΔT ISHE The results show that as the organic-inorganic hybrid perovskite film becomes thinner, spin heat conduction plays a crucial role in the generation of spin current, and the increase in SSE becomes more obvious; as the film thickness decreases, the spin heat conduction path shortens, and the temperature gradient can more effectively affect the electron spin, thereby generating a larger spin current. Figure 2 As shown in (c): The present application embodiment summarizes V ISHE As d measured at ΔT (8.5°C) OIHP As the film d OIHP As the magnon diffusion length increases, the V ISHE Together, the average magnon diffusion lengths of H-MAPbBr3 and D-MAPbBr3 films at room temperature were finally obtained to be 62.1nm and 120.3nm.

[0085] In summary, the increase in the magnon diffusion length of the D-MAPbBr3 film in the embodiment of the present application strongly confirms the effective regulation of the isotope effect on the magnon transport in spintronic devices.

[0086] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A spin electronic device, characterized in that: It includes: a substrate, and a magnetic film, a semiconductor film and a heavy metal electrode formed in sequence on the substrate; wherein the semiconductor film includes a perovskite film, the material of the perovskite film includes an organic-inorganic hybrid perovskite, and the monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms.

2. The spintronic device according to claim 1, wherein: The monovalent organic cation includes CH3ND3 + and CH(ND2)2 + At least one of , wherein D is a deuterium atom.

3. The spintronic device according to claim 2, characterized in that The general formula of the organic-inorganic hybrid perovskite is ABX3; Among them, A includes CH3ND3 + and CH(ND2)2 + At least one of, B is a divalent metal cation, and X is a monovalent anion.

4. The spintronic device according to claim 3, characterized in that The organic-inorganic hybrid perovskite includes at least one of CH3ND3PbI3, CH3ND3PbBr3 and CH(ND2)2PbBr3.

5. The spintronic device according to any one of claims 1 to 4, characterized in that: The semiconductor film has a thickness of 80 to 400 nm.

6. The spintronic device according to any one of claims 1 to 4, characterized in that: The substrate comprises a gadolinium gallium garnet substrate; and / or, the magnetic film comprises a yttrium iron garnet film; And / or, the heavy metal electrode comprises a platinum electrode.

7. A method for preparing a spin electronic device, characterized in that: include: preparing a magnetic film on a substrate; Preparing a semiconductor film on the magnetic film; wherein the material of the semiconductor film comprises an organic-inorganic hybrid perovskite, and the monovalent organic cations in the organic-inorganic hybrid perovskite contain deuterium atoms; A heavy metal electrode is prepared on the semiconductor film.

8. The preparation method according to claim 7, characterized in that: The step of preparing a semiconductor film on the magnetic film comprises: Dissolving methylammonium halide or formamidine halide in heavy water, and then drying to obtain deuterated methylammonium halide or deuterated formamidine halide; wherein the deuterium atom in the deuterated methylammonium halide is combined with a nitrogen atom, and the deuterium atom in the deuterated formamidine halide is combined with a nitrogen atom; Dissolving the deuterated methylammonium halide or deuterated formamidine halide and a divalent metal halide in an organic solvent to obtain a precursor solution; The precursor solution is spin-coated on the magnetic film, and then annealed to generate organic-inorganic hybrid perovskite to obtain the semiconductor film.

9. The preparation method according to claim 8, characterized in that: The molar ratio of the methylammonium halide or the formamidine halide to the heavy water is 1:(20-50); And / or, the drying temperature is 50-70°C.

10. The preparation method according to claim 8, characterized in that: Spin coating the precursor solution on the magnetic film at a speed of 2000 to 10000 r / s; And / or, the annealing treatment temperature is 140-160°C.

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