Resist pattern inspection method, resist pattern manufacturing method, substrate sorting method, and semiconductor package substrate or printed wiring board manufacturing method

Abstract

The method for inspecting a resist pattern includes an appearance inspection step for inspecting the appearance of the resist pattern on the basis of light emitted from a substrate on which the resist pattern is formed. The method for manufacturing a resist pattern includes: a resist pattern forming step of forming a resist pattern on a substrate; and a light-emitting material impregnation step in which, after the resist pattern formation step, a light-emitting material is impregnated in the resist pattern. The substrate sorting method includes: an appearance inspection step of inspecting the appearance of a resist pattern on the basis of light emitted from a substrate on which the resist pattern is formed; and an evaluation step for evaluating the resist pattern on the basis of the appearance inspection in the appearance inspection step. The method for manufacturing a semiconductor package substrate or a printed wiring board includes a conductor pattern forming step of forming a conductor pattern by etching or plating the substrate for which the evaluation of the resist pattern in the substrate sorting method satisfies a reference.

Description

Technical Field

[0001] The present invention relates to a method for inspecting a resist pattern, a method for manufacturing a resist pattern, a substrate sorting method, and a method for manufacturing a semiconductor package substrate or a printed wiring board. Background Art

[0002] In the case of manufacturing a semiconductor package substrate or a printed wiring board, first, a photosensitive layer is laminated on the substrate. Then, a prescribed portion of the photosensitive layer is irradiated with active light through a photomask to cure the exposed portion. Then, after peeling off the support, the unexposed portion of the photosensitive layer is removed with a developer, thereby forming a resist pattern on the substrate. Next, using the formed resist pattern as a mask, an etching process or a plating process is performed on the substrate with the resist pattern formed, thereby forming a conductor pattern on the substrate, and finally the cured portion (resist pattern) of the photosensitive layer is peeled off from the substrate.

[0003] In the manufacturing process of such semiconductor package substrates or printed wiring boards, if the exposure of active light is blocked by foreign matter attached to the photomask or the photosensitive layer, defects may occur in the resist pattern, thereby causing disconnection or short circuit in the conductor pattern. Therefore, conventionally, disconnection or short circuit in the conductor pattern has been checked by visual inspection of the conductor pattern.

[0004] Previous technical literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-207802 Summary of the invention

[0007] Technical issues to be solved by the invention

[0008] By performing a visual inspection on a resist pattern before forming a conductor pattern, it is possible to detect defects at an earlier stage in the manufacture of a semiconductor package substrate or a printed wiring board. In addition, by evaluating the yield of resist pattern formation, it is possible to help improve resist pattern formation. Conventionally, a scanning electron microscope (hereinafter also referred to as "SEM") is used to perform a visual inspection on a resist pattern (for example, refer to Patent Document 1).

[0009] However, the inspection using SEM is limited to 1 mm 2 Therefore, it takes a lot of time to inspect the resist pattern of the semiconductor package substrate or the printed wiring board as a whole using SEM. In addition, the inspection accuracy varies greatly depending on the inspector and the SEM used during the inspection.

[0010] Therefore, an object of the present invention is to provide a resist pattern inspection method, a resist pattern manufacturing method, a substrate sorting method, and a semiconductor package substrate or printed wiring board manufacturing method that can evaluate the resist pattern with high accuracy in a short time.

[0011] Means for solving technical problems

[0012] [1] The resist pattern inspection method of the present invention includes an appearance inspection step of inspecting the appearance of the resist pattern based on light emission from a substrate on which the resist pattern is formed.

[0013] In this resist pattern inspection method, the resist pattern is visually inspected based on light emission from a substrate on which the resist pattern is formed. Therefore, defects of the resist pattern can be detected in a short time with high accuracy compared to visual inspection using an SEM.

[0014] [2] In the appearance inspection step of the resist pattern inspection method described in [1], the contour of the resist pattern may be detected based on the light emission from the substrate, and the appearance inspection of the resist pattern may be performed based on the detected contour. In this resist pattern inspection method, the contour of the resist pattern detected based on the light emission from the substrate is used as the appearance inspection of the resist pattern, thereby enabling the appearance inspection of the resist pattern to be appropriately performed.

[0015] [3] In the appearance inspection step of the resist pattern inspection method described in [2], the detected contour can be compared with the pattern data used to form the resist pattern. In this resist pattern inspection method, as a visual inspection of the resist pattern, the detected contour is compared with the pattern data used to form the resist pattern, thereby enabling defects in the resist pattern to be detected with high accuracy.

[0016] [4] In the appearance inspection step of the resist pattern inspection method described in [2], the line width of the resist pattern can be measured based on the detected contour. In this resist pattern inspection method, as the appearance inspection of the resist pattern, the line width of the resist pattern is measured based on the detected contour, thereby enabling the formation state of the resist pattern to be evaluated.

[0017] [5] In the inspection method of the resist pattern described in any one of [1] to [4], it may further include: a resist pattern forming step of forming a resist pattern on a substrate; and a luminescent material impregnation step of impregnating the resist pattern with a luminescent material after the resist pattern forming step. In the inspection method of the resist pattern, the luminescent material is impregnated into the resist pattern after the resist pattern is formed on the substrate, thereby enhancing the luminescence intensity of the resist pattern, thereby increasing the contrast between the luminescence from the resist pattern and the luminescence from areas other than the resist pattern. Therefore, it is possible to improve the detection accuracy of the contour of the resist pattern based on the luminescence from the substrate.

[0018] [6] In the resist pattern forming step in the resist pattern inspection method described in [5], a resist pattern containing a compound that reacts with light and is converted into a luminescent material can be formed. In this resist pattern inspection method, a resist pattern containing a compound that reacts with light and is converted into a luminescent material is formed, thereby enhancing the luminescence intensity of the resist pattern. As a result, the detection accuracy of the contour of the resist pattern based on the luminescence from the substrate can be improved.

[0019] [7] In the resist pattern forming step in the resist pattern inspection method described in [5] or [6], a resist pattern having a thickness of 0.05 μm or more and 500 μm or less can be formed. In the resist pattern inspection method, a resist pattern having a thickness of 0.05 μm or more and 500 μm or less is formed, thereby preventing the resist pattern from becoming too thick and increasing the contrast between the light emission from the resist pattern and the light emission from the area other than the resist pattern. Therefore, the detection accuracy of the contour of the resist pattern based on the light emission from the substrate can be improved.

[0020] [8] The method for manufacturing a resist pattern of the present invention includes: a resist pattern forming step of forming a resist pattern on a substrate; and a light-emitting material impregnation step of impregnating the resist pattern with a light-emitting material after the resist pattern forming step.

[0021] In the manufacturing method of the resist pattern, after the resist pattern is formed on the substrate, the luminescent material is impregnated into the resist pattern, thereby enhancing the luminescence intensity of the resist pattern, and thus increasing the contrast between the luminescence from the resist pattern and the luminescence from the area other than the resist pattern. Therefore, for example, when the contour of the resist pattern is detected based on the luminescence from the substrate on which the resist pattern is formed, the detection accuracy can be improved. In addition, when measuring the line width of the resist pattern, it is easy to focus on the surface of the resist pattern or the contour of the resist pattern.

[0022] [9] In the resist pattern forming step in the resist pattern manufacturing method described in [8], a resist pattern containing a compound that reacts with light and is converted into a luminescent material can be formed. In the resist pattern manufacturing method, a resist pattern containing a compound that reacts with light and is converted into a luminescent material is formed, thereby enhancing the luminescence intensity of the resist pattern. As a result, for example, the detection accuracy of the contour of the resist pattern based on the luminescence from the substrate can be improved.

[0023]

[10] In the resist pattern forming step in the resist pattern manufacturing method described in [8] or [9], a resist pattern having a thickness of 0.05 μm or more and 500 μm or less can be formed. In the resist pattern manufacturing method, a resist pattern having a thickness of 0.05 μm or more and 500 μm or less is formed, thereby preventing the resist pattern from becoming too thick and increasing the contrast between the light emission from the resist pattern and the light emission from the area other than the resist pattern. Therefore, for example, the detection accuracy of the contour of the resist pattern based on the light emission from the substrate can be improved.

[0024]

[11] The substrate sorting method of the present invention includes: an appearance inspection step of performing an appearance inspection on a resist pattern based on light emission from a substrate on which a resist pattern is formed; and an evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step.

[0025] In this substrate sorting method, since the resist pattern is evaluated by visual inspection of the resist pattern based on light emission from the substrate, the substrate can be sorted in a short time with high accuracy compared to visual inspection using an SEM.

[0026]

[12] In the evaluation step of the substrate sorting method described in

[11] , the resist pattern can be evaluated based on the number or shape of defects in the resist pattern. In this substrate sorting method, the resist pattern is evaluated based on the number or shape of defects in the resist pattern, thereby enabling appropriate evaluation of the substrate.

[0027]

[13] In the substrate sorting method described in

[11] or

[12] , the resist pattern of the substrate subjected to appearance inspection in the appearance inspection process may be impregnated with a luminescent material. In this substrate sorting method, the resist pattern of the substrate subjected to appearance inspection in the appearance inspection process is impregnated with a luminescent material, so that the contrast between the luminescence from the resist pattern and the luminescence from the area other than the resist pattern becomes larger. Therefore, the appearance inspection of the resist pattern can be performed with high precision.

[0028]

[14] The method for manufacturing a semiconductor package substrate or a printed wiring board of the present invention includes a conductor pattern forming step of etching or plating a substrate whose resist pattern evaluation meets a benchmark in the substrate sorting method described in any one of

[11] to

[13] to form a conductor pattern.

[0029] In the manufacturing method of the semiconductor package substrate or printed wiring board, the substrate whose anti-etching pattern evaluation in the above-mentioned substrate sorting method meets the benchmark is etched or plated to form a conductor pattern, thereby being able to suppress the occurrence of adverse conditions such as disconnection or short circuit of the conductor pattern.

[0030] Effects of the Invention

[0031] According to the present invention, a resist pattern can be evaluated in a short time with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 middle, Figure 1 (a) is a schematic perspective view for explaining a photosensitive layer forming step in a resist pattern forming step, Figure 1 (b) is a schematic perspective view for explaining an exposure step in a resist pattern forming step, Figure 1 (c) is a schematic perspective view for explaining a development step in the resist pattern forming step.

[0033] Figure 2 middle, Figure 2 (a) Figure 2 (b) and Figure 2 (c) is a schematic perspective view for explaining formation of a conductor pattern based on a resist pattern having defects.

[0034] Figure 3 This is a schematic perspective view for explaining the appearance inspection process.

[0035] Figure 4 It is a schematic diagram for explaining light emission from a substrate.

[0036] Figure 5 It is a schematic diagram for explaining pattern data.

[0037] Figure 6 middle, Figure 6 (a) Figure 6 (b) and Figure 6 (c) is a schematic perspective view for explaining formation of a conductor pattern. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the resist pattern inspection method, resist pattern manufacturing method, substrate sorting method, and semiconductor package substrate or printed wiring board manufacturing method of the present invention are described with reference to the drawings. In addition, in all the drawings, the same or corresponding parts are marked with the same symbols. Moreover, "A or B" only needs to include either A or B, and may also include both.

[0039] [Resist pattern inspection method]

[0040] The inspection method of the resist pattern of the embodiment includes an appearance inspection process of performing an appearance inspection on the resist pattern based on the luminescence from the substrate on which the resist pattern is formed. The inspection method of the resist pattern may include a resist pattern forming process of forming the resist pattern on the substrate before the appearance inspection process. Furthermore, the inspection method of the resist pattern may include a luminescent material impregnation process of impregnating the resist pattern with a luminescent material. Furthermore, the inspection method of the resist pattern may also include other processes. In this specification, the term "process" includes not only independent processes, but also processes that can achieve the desired effect of the process even if it cannot be clearly distinguished from other processes. The resist pattern is called a photocured material pattern of a photosensitive resin composition, also known as a relief pattern.

[0041] <Resist pattern forming step>

[0042] like Figure 1 As shown, the resist pattern forming step includes a photosensitive layer forming step of laminating a photosensitive layer on a substrate (refer to Figure 1 (a)) an exposure step of irradiating a predetermined portion of the photosensitive layer with active light to form a photocured portion (refer to Figure 1 (b)) and a developing step of removing the photosensitive layer from the substrate except for the predetermined portion (reference Figure 1 (c) The resist pattern forming step may include other steps as necessary.

[0043] (Photosensitive layer forming step)

[0044] like Figure 1 As shown in (a), in the photosensitive layer forming step, a photosensitive layer 2 and a support 3 are formed on a substrate 1. The substrate 1 includes, for example, an insulating layer 1a and a conductive layer 1b formed on the insulating layer 1a. The photosensitive layer 2 is formed on the conductive layer 1b of the substrate 1. The conductive layer 1b is, for example, electroless copper plating.

[0045] The photosensitive layer 2 is a layer formed of a photosensitive resin composition whose properties are changed by irradiation with light (for example, photocuring). The photosensitive resin composition forming the photosensitive layer 2 contains, for example, a binder polymer, a photopolymerizable compound, and a photopolymerization initiator. The photosensitive resin composition forming the photosensitive layer 2 may also contain a photosensitizer, a polymerization inhibitor, or other components as required. The photosensitive resin composition forming the photosensitive layer 2 may contain, for example, dyes such as malachite green, Victoria blue, brilliant green, and methyl violet, photochromic agents such as tribromophenyl sulfone, colorless crystal violet, diphenylamine, benzylamine, triphenylamine, diethylaniline, and o-chloroaniline, thermochromic inhibitors, plasticizers such as p-toluenesulfonamide, pigments, fillers, defoamers, flame retardants, adhesion enhancers, leveling agents, peeling promoters, antioxidants, fragrances, imaging agents, thermal crosslinking agents, and other additives.

[0046] As the support 3 , for example, a heat-resistant and solvent-resistant polymer film (support film) such as polyester such as polyethylene terephthalate (PET) or polyolefin such as polypropylene and polyethylene can be used.

[0047] As a method for forming the photosensitive layer 2 and the support 3 on the substrate 1, there is, for example, a method using a photosensitive element (not shown). The photosensitive element, for example, includes a support, a photosensitive layer, and a protective layer in sequence. After removing the protective layer, the photosensitive layer of the photosensitive element is heated and pressed against the substrate 1, thereby forming the photosensitive layer 2 and the support 3 on the substrate 1. Thus, a laminate 4 including the substrate 1, the photosensitive layer 2, the support 3, and a support film (not shown) in sequence is obtained. In addition, an intermediate layer or the like may be arranged between the support 3 and the photosensitive layer 2.

[0048] (Exposure process)

[0049] like Figure 1 As shown in (b), in the exposure process, the photosensitive layer 2 is exposed to active light via the support 3. As a result, the exposed portion irradiated with active light is photocured to form a photocured portion 2a (latent image). As an exposure method, a known exposure method can be applied, for example, a method of irradiating active light in an image form via a photomask 5 called an original image (mask exposure method), an LDI (Laser Direct Imaging) exposure method, or a method of irradiating an image form via a lens using active light projected with an image of a photomask (projection exposure method), etc.

[0050] (Development Process)

[0051] like Figure 1 As shown in (c), in the development step, the uncured portion 2b of the photosensitive layer 2 is removed from the substrate 1. A resist pattern 6 composed of the photocured portion 2a of the photosensitive layer 2 is formed on the substrate 1 through the development step.

[0052] The thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 0.05 μm or more, 0.1 μm or more, 1 μm or more, or 5 μm or more. Furthermore, the thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 500 μm or less, 300 μm or less, 100 μm or less, or 60 μm or less. The minimum and maximum values ​​of the thickness of these resist patterns 6 can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 can be set to 0.05 μm or more and 500 μm or less, 0.1 μm or more and 300 μm or less, 1 μm or more and 100 μm or less, or 5 μm or more and 60 μm or less. The thickness of the resist pattern 6 is the height relative to the substrate 1 in a direction perpendicular to the main surface of the substrate 1.

[0053] The resist pattern 6 formed on the substrate 1 has, for example, luminescence. Luminescence is also called cold light (LUMINESCENCE) and the like, and for example, refers to the emission of light by absorbing excitation light and the like when irradiated with excitation light such as inspection light. And, luminescence refers to light emitted in this way. As luminescence, there are fluorescence and phosphorescence and the like. Fluorescence is luminescence that stops immediately if the irradiation of excitation light stops. Phosphorescence is luminescence that continues to emit light even if the irradiation of light such as inspection light stops. Having luminescence means having the property of such luminescence, that is, having the property of absorbing excitation light and the like when irradiated with excitation light. In addition, the resist pattern 6 may not have luminescence. And, in the case of performing the luminescent material impregnation process described later, the resist pattern 6 before the luminescent material impregnation process may not have luminescence.

[0054] In addition, the resist pattern 6 formed on the substrate 1, for example, includes a compound that reacts with light and is converted into a luminescent material. The luminescent material is a pigment that emits light when irradiated with excitation light. As luminescent materials, xanthene pigments, coumarin pigments, pyrazoline pigments, dipyrromethene pigments, anthracene pigments, pyrene pigments, perylene pigments, lophine pigments (also called lophine, lophine compounds, etc.) and the like can be used. As a compound that reacts with light and is converted into a luminescent material, hexaaryl biimidazoles and hexaaryl biimidazole derivatives can be used. In addition, the resist pattern 6 may not include a compound that reacts with light and is converted into a luminescent material.

[0055] (Luminescent material impregnation step)

[0056] In the luminescent material impregnation process, in order to enhance the luminescent intensity of the resist pattern 6, the luminescent material is impregnated into the resist pattern 6. The luminescent material is a material that emits light when irradiated with excitation light. In the case where the luminescent material is a fluorescent material, the luminescence becomes fluorescence. In the case where the luminescent material is a phosphorescent material, the luminescence becomes phosphorescence. As a luminescent material (fluorescent material or phosphorescent material), for example, a luminescent pigment (fluorescent pigment or phosphorescent pigment) that emits light when irradiated with excitation light can be used. As a luminescent pigment, for example, xanthene pigments, coumarin pigments, pyrazoline pigments, dipyrromethene dipromethene pigments, anthracene pigments, pyrene pigments, perylene pigments, rofen pigments, etc. can be used. And, as a luminescent material, for example, a fluorescent dye containing a luminescent pigment can be used. In the luminescent material impregnation process, for example, the substrate 1 formed with the resist pattern 6 is immersed in a fluorescent dye as a luminescent material. As the fluorescent dye liquid, for example, saturated aqueous solutions of xanthene pigments, coumarin pigments, pyrazoline pigments, dipyrromethene dipromethene pigments, anthracene pigments, pyrene pigments, perylene pigments, and rofin pigments can be cited. For example, a saturated aqueous solution of Rhodamine B (FUJIFILM Wako Pure Chemical Corporation) as a xanthene pigment can be used. As the solvent, for example, water, methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N,N-dimethylformamide, propylene glycol monomethyl ether and their mixed solvents can be cited. At this time, the entire substrate 1 can be immersed in the fluorescent dye liquid, and a part of the substrate 1 can be immersed in the fluorescent dye liquid in such a way that the entire resist pattern 6 is immersed in the fluorescent dye liquid. And, for example, the fluorescent dye liquid can also be dripped onto the substrate 1 formed with the resist pattern 6. At this time, the fluorescent dye liquid may be dripped onto the entire substrate 1, or the fluorescent dye liquid may be dripped onto a portion of the substrate 1 in the manner of dripping the fluorescent dye liquid onto the entire resist pattern 6. Furthermore, for example, in the developing step in the resist pattern forming step, a luminescent material may be added to the developer and rinse liquid for removing the uncured portion 2b of the photosensitive layer 2 from the substrate 1. After the fluorescent dye is impregnated into the resist pattern 6, the fluorescent dye liquid is removed from the area other than the resist pattern 6. As a method for removing the fluorescent dye liquid, for example, after the fluorescent dye is impregnated into the resist pattern 6, sufficient water washing and air drying may be performed.

[0057] <Appearance inspection process>

[0058] In the appearance inspection process, the resist pattern 6 is inspected for appearance based on light emission (fluorescence or phosphorescence) from the substrate 1 on which the resist pattern 6 is formed. That is, in the appearance inspection process, the resist pattern 6 is inspected for appearance based on light emitted from the substrate 1.

[0059] In the above exposure process, if the exposure of the active light is caused by foreign matter 7 attached to the photomask 5, the support 3 or the photosensitive layer 2 (refer to Figure 1 ) and the like, a defect 8 may be generated on the resist pattern 6. In more detail, if Figure 2 (a) Figure 2 (b) and Figure 2 As shown in (c), when manufacturing a semiconductor package substrate or a printed wiring board, a substrate 1 having a resist pattern 6 is subjected to an etching process or a plating process to form a conductor pattern 9. Therefore, if a defect 8 exists on the resist pattern 6, a disconnection or a short circuit may occur on the conductor pattern 9 formed by the etching process or the plating process. In addition, in the exposure process, the line width of the resist pattern 6 may become thicker or thinner depending on the exposure state of the active light.

[0060] Therefore, in the appearance inspection process, the resist pattern 6 is visually inspected to detect defects before forming the conductor pattern. In the appearance inspection process, for example, the contour of the resist pattern 6 is detected based on the light emission from the substrate 1, and the resist pattern 6 is visually inspected based on the detected contour.

[0061] like Figure 3 As shown, first, in order to make the resist pattern 6 emit light, the inspection light as the excitation light is emitted to the substrate 1 on which the resist pattern 6 is formed, and the light emitted from the substrate 1 is received. That is, the light emitted by the substrate 1 is received. The wavelength of the inspection light can be set to, for example, 390nm or less, 380nm or less, or 370nm or less. In addition, the wavelength of the inspection light can be set to, for example, 190nm or more, 250nm or more, or 300nm or more. The minimum and maximum values ​​of these wavelengths can be appropriately combined. For example, the wavelength of the inspection light can be set to 390nm or less and 190nm or more, 380nm or less and 250nm or more, or 370nm or less and 300nm or more. In addition, in the light source of the inspection light, a carbon arc lamp, a mercury vapor arc lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, a gas laser such as an argon laser, a solid laser such as a YAG laser, a semiconductor laser, an LED or the like can be used, and only the light of the wavelength of the above-mentioned inspection light can be used through a filter. The wavelength region for sensing luminescence can be changed arbitrarily, for example, it can be a visible light of 400nm to 800nm. Regarding the wavelength region for luminescence sensing, it can be set to 400nm to 500nm blue light, 500nm to 600nm green light, or 600nm to 800nm ​​red light. The wavelength can be used in one region alone or in combination of two or more regions. In the appearance inspection process, the light receiving region of the substrate 1 that receives the luminescence can be set to 1cm, for example. 2 Above and 2500cm 2 Below, 5cm 2 Above and 1200cm2 Below, 25cm 2 Over 600cm 2 the following.

[0062] Then, if Figure 4 As shown, the contour 10 of the resist pattern 6 is determined based on the contrast between the light emission from the resist pattern 6 and the light emission from the area other than the resist pattern 6. For example, in the light-receiving image of the light emission, a boundary where the contrast such as brightness or chromaticity becomes large is detected. And, the detected boundary is determined as the contour 10 of the resist pattern 6. In the detection of the contour 10 of the resist pattern 6 based on the light emission from the substrate 1, for example, an optical automatic appearance inspection device such as AOIOrbotech UltraDimension 800 (manufactured by Orbotech Ltd., product name) can be used.

[0063] As appearance inspections of the resist pattern 6, for example, there can be cited inspections for investigating whether the resist pattern 6 has defects 8, inspections for investigating the shape, position, size, etc. (hereinafter also referred to as "shape, etc.") of the defects 8 of the resist pattern 6, inspections for investigating the shape of the resist pattern 6, or inspections for measuring the line width of the resist pattern 6.

[0064] In the inspection for checking whether the resist pattern 6 has a defect 8, for example, Figure 4 and Figure 5 As shown, the contour 10 of the resist pattern 6 detected based on the light emission from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming process. As the pattern data 11, for example, CAD data of the resist pattern 6 can be used. Then, with respect to the pattern data 11, a portion 10a different from the detected contour 10 is detected as a defect 8 of the resist pattern 6. Then, the number of the detected defects 8 is calculated.

[0065] In the inspection for investigating the shape of the defect 8 of the resist pattern 6, for example, Figure 4 and Figure 5 As shown, the contour 10 of the resist pattern 6 detected based on the light emission from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming process. Then, a portion 10a different from the detected contour 10 is detected as a defect 8 of the resist pattern 6 with respect to the pattern data 11. Then, based on the contour of the detected defect 8, the shape of the detected defect 8 and the like are investigated.

[0066] In the inspection to check the shape of the resist pattern 6, for example, Figure 4 and Figure 5As shown, the contour 10 of the resist pattern 6 detected based on the light emission from the substrate 1 is compared with the pattern data 11 used to form the resist pattern 6 in the resist pattern forming step. Then, the degree of difference between the shape of the resist pattern 6 and the pattern data 11 is examined.

[0067] In the inspection of measuring the line width of the resist pattern 6 , for example, the line width of the resist pattern 6 is measured by measuring the interval of the outline 10 of the resist pattern 6 detected based on the light emission from the substrate 1 .

[0068] [Method for producing resist pattern]

[0069] The method for manufacturing a resist pattern of the embodiment includes: a resist pattern forming step of forming a resist pattern 6 on a substrate 1; and a luminescent material impregnation step of impregnating the resist pattern with a luminescent material after the resist pattern forming step. The resist pattern forming step of the method for manufacturing a resist pattern may be, for example, the same as the resist pattern forming step of the method for inspecting the resist pattern described above. Furthermore, the luminescent material impregnation step of the method for manufacturing a resist pattern may be, for example, the same as the luminescent material impregnation step of the method for inspecting the resist pattern described above. The method for manufacturing a resist pattern may include other steps.

[0070] [Substrate sorting method]

[0071] The substrate sorting method of the present embodiment includes: an appearance inspection step of performing an appearance inspection on the resist pattern 6 based on the luminescence from the substrate 1 on which the resist pattern 6 is formed; and an evaluation step of evaluating the resist pattern 6 based on the appearance inspection in the appearance inspection step. The appearance inspection step of the substrate sorting method may be the same as the appearance inspection step of the resist pattern inspection method described above. The resist pattern of the substrate to be inspected in the appearance inspection step may be impregnated with a luminescent material. The substrate sorting method may include other steps.

[0072] <Evaluation process>

[0073] In the evaluation step, the resist pattern 6 is evaluated based on a predetermined standard.

[0074] For example, when a visual inspection is performed in the visual inspection process to check whether the resist pattern 6 has defects 8, in the evaluation process, the resist pattern 6 is evaluated based on the number of defects 8 in the resist pattern 6. For example, in the evaluation process, if the number of defects 8 in the resist pattern 6 is less than a predetermined reference number, the resist pattern 6 is evaluated as good, and if the number of defects 8 in the resist pattern 6 is more than the predetermined reference number, the resist pattern 6 is evaluated as poor.

[0075] Furthermore, for example, when the shape of the defect 8 of the resist pattern 6 is inspected in the appearance inspection process, in the evaluation process, the resist pattern 6 is evaluated based on the size of the defect 8 of the resist pattern 6. For example, in the evaluation process, if the shape of the defect 8 of the resist pattern 6 is within a predetermined allowable range, it is evaluated as good, and if the shape of the defect 8 of the resist pattern 6 is outside the predetermined allowable range, it is evaluated as bad.

[0076] Furthermore, for example, when the inspection of investigating the shape of the resist pattern 6 is performed in the appearance inspection process, in the evaluation process, the resist pattern 6 is evaluated based on the shape of the resist pattern 6. For example, in the evaluation process, if the degree of difference between the shape of the resist pattern 6 and the pattern data 11 is within a predetermined allowable range, it is considered good, and if the degree of difference between the shape of the resist pattern 6 and the pattern data 11 is outside the predetermined allowable range, it is considered bad.

[0077] Furthermore, for example, when a visual inspection of measuring the line width of the resist pattern 6 is performed in the visual inspection process, in the evaluation process, the resist pattern 6 is evaluated based on the line width of the resist pattern 6. For example, in the evaluation process, if the line width of the resist pattern 6 is within a predetermined reference range, it is evaluated as good, and if the line width of the resist pattern 6 is outside the predetermined reference range, it is evaluated as bad.

[0078] [Method for manufacturing semiconductor package substrate or printed wiring board]

[0079] The manufacturing method of the semiconductor package substrate or printed wiring board of the present embodiment includes a conductor pattern forming process of etching or plating the substrate whose evaluation of the resist pattern in the above-mentioned substrate sorting method meets the benchmark to form a conductor pattern. That is, in the conductor pattern forming process, the substrate whose evaluation of the resist pattern in the substrate sorting method does not meet the benchmark will not be etched or plated to form a conductor pattern. The manufacturing method of the semiconductor package substrate or printed wiring board of the present embodiment may also include other processes such as the resist pattern removal process as needed. In addition, the manufacturing method of the semiconductor package substrate or printed wiring board is a method for manufacturing a semiconductor package substrate or a printed wiring board, and is a manufacturing method of a semiconductor package substrate or a manufacturing method of a printed wiring board. According to this manufacturing method, a semiconductor package substrate or a printed wiring board can be manufactured.

[0080] In the etching process, the resist pattern formed on the substrate having the conductor layer is used as a mask to etch away the conductor layer of the substrate that is not covered with the resist. After the etching process, the resist is removed by removing the resist pattern 6 to form a conductor pattern.

[0081] like Figure 6As shown in (a), in the plating process, the resist pattern 6 formed on the substrate 1 having the conductor layer 1b is used as a mask, and copper or solder is plated on the conductor layer 1b of the substrate 1 not covered by the resist. Figure 6 As shown in (b), after the plating process, the resist is removed by removing the resist pattern 6, as shown in FIG. Figure 6 As shown in (c), the conductor layer 1b covered with the resist is etched to form a conductor pattern 9. The plating method may be electrolytic plating or electroless plating, but electrolytic plating is preferred.

[0082] As described above, in the resist pattern inspection method of this embodiment, the resist pattern 6 is visually inspected based on the light emission from the substrate 1 on which the resist pattern 6 is formed. Therefore, compared with the visual inspection using SEM, the defect 8 of the resist pattern 6 can be detected in a short time with high accuracy.

[0083] Furthermore, in this resist pattern inspection method, as the appearance inspection of the resist pattern 6 , the appearance inspection of the resist pattern 6 can be appropriately performed by utilizing the profile 10 of the resist pattern 6 detected based on the light emission from the substrate 1 on which the resist pattern 6 is formed.

[0084] Furthermore, in this resist pattern inspection method, the detected outline 10 is compared with pattern data 11 for forming the resist pattern 6 as an appearance inspection of the resist pattern 6, thereby making it possible to detect defects 8 of the resist pattern 6 with high accuracy.

[0085] Furthermore, in this resist pattern inspection method, as the appearance inspection of the resist pattern 6 , the line width of the resist pattern 6 is measured based on the detected profile 10 , thereby making it possible to evaluate the formation state of the resist pattern 6 .

[0086] Furthermore, in the resist pattern inspection method, after the resist pattern 6 is formed on the substrate 1, the light emitting material is impregnated into the resist pattern 6, thereby enhancing the light emission intensity of the resist pattern 6, and thus increasing the contrast between the light emission from the resist pattern 6 and the light emission from the region other than the resist pattern 6. Therefore, the detection accuracy of the contour 10 of the resist pattern 6 based on the light emission from the substrate 1 can be improved.

[0087] Furthermore, in the resist pattern inspection method, the resist pattern 6 containing a compound that reacts with light and converts into a luminescent material is formed, thereby enhancing the luminescence intensity of the resist pattern 6. Thus, the detection accuracy of the contour 10 of the resist pattern 6 based on the luminescence from the substrate 1 can be improved.

[0088] The thicker the resist pattern 6 becomes, the easier it is for the light emitted from the resist pattern 6 to become brighter. That is, the thicker the resist pattern 6 becomes, the greater the contrast between the light emitted from the resist pattern 6 and the light emitted from the area other than the resist pattern 6 becomes. Therefore, from the viewpoint that the contrast between the light emitted from the resist pattern 6 and the light emitted from the area other than the resist pattern 6 becomes larger, the thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 0.05 μm or more, 0.1 μm or more, 1 μm or more, or 5 μm or more. And, from the viewpoint that the resist pattern 6 can be suppressed from becoming too thick, the thickness of the resist pattern 6 formed on the substrate 1 can be set to, for example, 500 μm or less, 300 μm or less, 100 μm or less, or 60 μm or less. The minimum and maximum values ​​of the thickness of these resist patterns 6 can be appropriately combined. For example, the thickness of the resist pattern 6 formed on the substrate 1 may be 0.05 μm to 500 μm, 0.1 μm to 300 μm, 1 μm to 100 μm, or 5 μm to 60 μm.

[0089] In the inspection method of the resist pattern, the resist pattern 6 is formed to have a thickness of 0.05 μm to 500 μm, 0.1 μm to 300 μm, 1 μm to 100 μm, or 5 μm to 60 μm, thereby preventing the resist pattern 6 from becoming too thick and increasing the contrast between the light emission from the resist pattern 6 and the light emission from the region other than the resist pattern 6. Therefore, the detection accuracy of the contour 10 of the resist pattern 6 based on the light emission from the substrate 1 can be improved.

[0090] In the method for manufacturing a resist pattern of the present embodiment, after the resist pattern 6 is formed on the substrate 1, the resist pattern 6 is impregnated with a light emitting material, thereby enhancing the light emission intensity of the resist pattern 6, and thus increasing the contrast between the light emission from the resist pattern 6 and the light emission from a region other than the resist pattern 6. Therefore, for example, when detecting the contour 10 of the resist pattern 6 based on the light emission from the substrate on which the resist pattern 6 is formed, the detection accuracy can be improved. Furthermore, when measuring the line width of the resist pattern 6, etc., it is easy to focus on the surface of the resist pattern 6 or the contour of the resist pattern 6.

[0091] Furthermore, in the method for manufacturing a resist pattern, the resist pattern 6 containing a compound that reacts with light and is converted into a luminescent material is formed, thereby enhancing the luminescence intensity of the resist pattern 6. Thus, for example, the detection accuracy of the contour 10 of the resist pattern 6 based on the luminescence from the substrate 1 can be improved.

[0092] Furthermore, in the method for manufacturing a resist pattern, the resist pattern 6 is formed to have a thickness of 0.05 μm to 500 μm, 0.1 μm to 300 μm, 1 μm to 100 μm, or 5 μm to 60 μm, thereby preventing the resist pattern 6 from becoming too thick and increasing the contrast between the light emission from the resist pattern 6 and the light emission from the region other than the resist pattern 6. Therefore, for example, the detection accuracy of the contour 10 of the resist pattern 6 based on the light emission from the substrate 1 can be improved.

[0093] In the substrate sorting method of this embodiment, the resist pattern 6 is evaluated by visual inspection of the resist pattern 6 based on light emission from the substrate 1 on which the resist pattern 6 is formed. Therefore, the substrate 1 can be sorted with high accuracy in a short time compared to visual inspection using an SEM.

[0094] Furthermore, in this substrate sorting method, the substrate 1 is evaluated based on the number or shape of defects in the resist pattern 6 , thereby being able to appropriately evaluate the substrate 1 .

[0095] Furthermore, in this substrate sorting method, the resist pattern 6 of the substrate 1 subjected to appearance inspection in the appearance inspection step contains a luminescent material, so that the contrast between the luminescence from the resist pattern 6 and the luminescence from the region other than the resist pattern 6 becomes larger. Therefore, the appearance inspection of the resist pattern 6 can be performed with high precision.

[0096] In the manufacturing method of the semiconductor package substrate or printed circuit board of the present embodiment, the substrate 1 whose anti-etching pattern 6 in the above-mentioned substrate sorting method satisfies the evaluation benchmark is etched or plated to form a conductor pattern 9, thereby being able to suppress the occurrence of adverse conditions such as disconnection or short circuit of the conductor pattern 9.

[0097] The present invention is not limited to the above-described embodiment, and can be modified as appropriate without departing from the gist of the present invention.

[0098] Example

[0099] Next, examples of the present invention will be described. However, the present invention is not limited to the following examples.

[0100] 1. Photosensitive elements and substrates

[0101] The photosensitive elements and substrates shown in Table 1 and below were used in Examples 1 to 5 and Comparative Example 1. The last two digits of the product name of the photosensitive element represent the film thickness of the photosensitive layer (unit: μm).

[0102] (Photosensitive element)

[0103] F-1: ME-3606SG (manufactured by Showa Denko Materials Co., Ltd., product name)

[0104] F-2: RY-5115 (manufactured by Showa Denko Materials Co., Ltd., product name)

[0105] F-3: RY-5125 (manufactured by Showa Denko Materials Co., Ltd., product name, photosensitive layer composition is the same as (F-2))

[0106] F-4: FL-7225 (manufactured by Showa Denko Materials Co., Ltd., product name)

[0107] (Base material)

[0108] S-1: Cu sputtered PET film (manufactured by GEOMATEC Co., Ltd., thickness: 125 μm, Ra < 50 nm)

[0109] S-2: GL-102 (manufactured by Ajinomoto Fine-Techno Co., Inc., product name, Ra: about 100 nm)

[0110] S-3: MCL-E67 (manufactured by Showa Denko Materials Co., Ltd., product name, Ra: about 300 nm)

[0111] 2. Fabrication of laminated body

[0112] In Examples 1, 3 to 4 and Comparative Example 1, S-1 stored under dehumidified conditions was used as a substrate having a copper layer as a conductive layer. In Examples 2 and 5, the substrate having a copper layer as a conductive layer was pickled and washed with water, and then dried using an air flow, and then the substrate was heated to 80°C. Thereafter, in Examples 1 to 5 and Comparative Example 1, a photosensitive element was laminated (stacked) on the surface of the copper layer of the substrate. The protective layer of the photosensitive element was peeled off, and lamination was performed using a hot roller at 110°C with a pressing pressure of 0.4 MPa and a roller speed of 1.0 m / min so that the photosensitive layer of the photosensitive element was in contact with the surface of the copper layer of the substrate. In this way, a laminate of Examples 1 to 5 and Comparative Example 1 in which a substrate, a photosensitive layer and a support were laminated in this order was obtained. The obtained laminate was used as a test piece for the test shown below.

[0113] 3. Fabrication of patterned substrate

[0114] [Examples 1 to 4 and Comparative Example 1]

[0115] A glass chrome type photomask (for resolution evaluation or pattern inspection) was used, and the photosensitive layer was exposed to a predetermined energy using a projection exposure device (manufactured by Ushio Inc., product name "UX-2240SM") using an ultra-high pressure mercury lamp (365 nm) as a light source (exposure treatment). In addition, a line pattern having a line width / space width of x / x (x: 1 to 30, unit: μm) was used in the photomask for resolution evaluation, and a line pattern having a line width / space width of x / x (x: 10, 15, 20, unit: μm) was used in the photomask for pattern inspection (pattern area: 90 mm×90 mm).

[0116] After exposure, the support is peeled off to expose the photosensitive layer, and a 1% by mass sodium carbonate aqueous solution at 30°C is sprayed for twice the shortest development time (the shortest time to remove the unexposed portion) to remove the unexposed portion (development treatment). The substrate after the development treatment exposed using a photomask for resolution evaluation is called a pattern substrate for resolution evaluation, and the substrate after the development treatment exposed using a photomask for pattern inspection is called a pattern substrate for inspection. In the pattern substrate for resolution evaluation, the resolution is evaluated based on the value of the minimum line width / space width in the resist pattern formed by cleanly removing the spacer portion (unexposed portion) and without distortion, winding and defect in the line portion (exposed portion). At this time, when a resist pattern is formed using a resolution evaluation photomask in which the line width / space width of the line pattern becomes 30μm / 30μm, the exposure amount at which the line width of the resist pattern becomes 30.0μm is set to the above-mentioned specified energy.

[0117] [Example 5]

[0118] The photosensitive layer was exposed to a predetermined energy using a direct writing exposure device (Orbotech Ltd., product name "NuvogoFine 8") using a semiconductor laser (mixed beams of 375 nm and 405 nm, the ratio of wavelengths can be arbitrarily changed (375 nm:405 nm = 0:100 to 100:0)) as a light source. After exposure, the development treatment was performed in the same steps as in Examples 1 to 4 and Comparative Example 1 to produce a pattern substrate for resolution evaluation and a pattern substrate for inspection.

[0119] 4. Visual inspection of resist pattern

[0120] In Examples 1 to 5, as an appearance inspection of the resist pattern, AOIOrbotech UltraDimension 800 (manufactured by Orbotech Ltd., product name) was used to irradiate UV light on the inspection pattern substrate to make the resist pattern fluoresce, thereby detecting the defects of the resist pattern. In Comparative Example 1, as an appearance inspection of the resist pattern, the defects of the resist pattern were observed using an SEM of SU-1500 (manufactured by Hitachi High-Tech Corporation., product name). At this time, the acceleration voltage was set to 15 kV and the current value was set to 80 μA. In addition, the time of the appearance inspection was evaluated for Examples 1 to 5 and Comparative Example 1, and the pattern detection rate of the defects of the resist pattern was also evaluated for Examples 1 to 5 as the inspection accuracy. The pattern detection rate (inspection accuracy) refers to the probability that the inspection device recognizes the outline of the resist pattern and can recognize the pattern when performing an appearance inspection. That is, before the appearance inspection is performed, the inspection device sets the appropriate grayscale (threshold value for binarization of light and dark) corresponding to Examples 1 to 5, respectively, and sets the grayscale (threshold value for binarization of light and dark) setting to be acceptable if the setting is completed, and unacceptable if the setting is not completed and an error occurs. Furthermore, in the evaluation of the pattern detection rate of defects in the resist pattern, the case where the pattern is always acceptable is set to A, the case where the pattern is not always acceptable but the probability of being unacceptable is low is set to B, and the case where the probability of being unacceptable is high is set to C. In the evaluation of the time for the appearance inspection, the case where the pattern is less than 10 minutes / cm 2 Let A be 10 points / cm 2 Above and less than 5000 points / 100cm 2 Set it as B, and set 5000 points / 100cm 2 The above is set as C.

[0121] [Table 1]

[0122] project Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Photosensitive element F-1 F-1 F-2 F-3 F-4 F-1 Photosensitive layer thickness (μm) 6 6 15 25 25 6 Base material of substrate S-1 S-2 S-1 S-1 S-3 S-1 Surface roughness of substrate Ra(nm) <50 100 <50 <50 300 <50 Check time A A A A A C Check accuracy A A A A A -

[0123] 5. Evaluation

[0124] As shown in Table 1, in Examples 1 to 5, the inspection time was significantly shortened compared to Comparative Example 1. From this result, it can be seen that by performing appearance inspection of a resist pattern based on fluorescence from a substrate on which a resist pattern is formed, defects in the resist pattern can be detected in a shorter time than by appearance inspection using a SEM.

[0125] Furthermore, the pattern detection rate was high in Examples 1 to 5. From these results, it is understood that in the appearance inspection of the resist pattern based on the fluorescence from the substrate on which the resist pattern is formed, the contour of the resist pattern is easily detected and the inspection accuracy is high.

[0126] Explanation of symbols

[0127] 1-substrate, 1a-insulating layer, 1b-conductor layer, 2-photosensitive layer, 2a-photocured portion, 2b-uncured portion, 3-support, 4-laminated body, 5-photomask, 6-resist pattern, 7-foreign matter, 8-defect, 9-conductor pattern, 10-profile, 11-pattern data.

Claims

1. A method for inspecting a resist pattern, comprising an appearance inspection step of inspecting the appearance of the resist pattern based on light emission from a substrate on which the resist pattern is formed.

2. The method for inspecting a resist pattern according to claim 1, wherein: In the appearance inspection step, the contour of the resist pattern is detected based on the light emission from the substrate, and the appearance inspection of the resist pattern is performed based on the detected contour.

3. The method for inspecting a resist pattern according to claim 2, wherein: In the appearance inspection step, the detected contour is compared with pattern data for forming the resist pattern.

4. The method for inspecting a resist pattern according to claim 2, wherein: In the appearance inspection step, a line width of the resist pattern is measured based on the detected contour.

5. The method for inspecting a resist pattern according to any one of claims 1 to 4, further comprising: a resist pattern forming step of forming the resist pattern on the substrate; and The light emitting material impregnation step is performed after the resist pattern forming step, and the light emitting material is impregnated into the resist pattern.

6. The method for inspecting a resist pattern according to claim 5, wherein: In the resist pattern forming step, the resist pattern including a compound that reacts with light and is converted into a light emitting material is formed.

7. The method for inspecting a resist pattern according to claim 5 or 6, wherein: In the resist pattern forming step, the resist pattern is formed to have a thickness of 0.05 μm or more and 500 μm or less.

8. A method for manufacturing a resist pattern, comprising: A resist pattern forming step of forming a resist pattern on a substrate; and The light emitting material impregnation step is performed after the resist pattern forming step to impregnate the resist pattern with a light emitting material.

9. The method for producing a resist pattern according to claim 8, wherein: In the resist pattern forming step, the resist pattern including a compound that reacts with light and is converted into a light emitting material is formed.

10. The method for producing a resist pattern according to claim 8 or 9, wherein: In the resist pattern forming step, the resist pattern is formed to have a thickness of 0.05 μm or more and 500 μm or less.

11. A substrate sorting method, comprising: an appearance inspection step of inspecting the appearance of the resist pattern based on light emission from a substrate on which the resist pattern is formed; and An evaluation step of evaluating the resist pattern based on the appearance inspection in the appearance inspection step.

12. The substrate sorting method according to claim 11, wherein: In the evaluation step, the resist pattern is evaluated based on the number of defects in the resist pattern.

13. The substrate sorting method according to claim 11 or 12, wherein: The resist pattern of the substrate subjected to the appearance inspection in the appearance inspection step is impregnated with a light emitting material.

14. A method for manufacturing a semiconductor package substrate or a printed circuit board, comprising: The conductor pattern forming step is to perform an etching process or a plating process on the substrate whose evaluation of the resist pattern satisfies a reference in the substrate sorting method according to any one of claims 11 to 13, thereby forming a conductor pattern.

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