Wide-band diode and manufacturing method thereof

Abstract

The invention relates to a wide band diode and a manufacturing method thereof. The manufacturing method of the wide-band diode comprises the following steps of: growing an N-type doped epitaxial layer on an N-type doped substrate, and doping P-type ions on the epitaxial layer to form an active region, a junction termination extension region and an edge region; the active region presents an axisymmetric warp and weft-like pattern, and the proportion of the doping area closer to the central position of the active region is higher. The junction termination extension region surrounds the active region, and the edge region surrounds the active region and the junction termination extension region to improve the tolerance of the wide band diode to surge current.

Description

Technical Field

[0001] The invention relates to a wide energy band diode, in particular to a wide energy band diode with an active region in an axisymmetric longitude-latitude line-like pattern. Background Art

[0002] Wide-band-gap diodes have the characteristics of wide-band-gap semiconductors and Schottky barriers. Wide-band-gap semiconductors, such as silicon carbide, gallium nitride, aluminum gallium nitride, and zirconium nitride, have high electron drift velocity, high electric field characteristics, and high temperature tolerance. Schottky barriers usually have fast switching speeds and low forward voltage losses, so they are suitable for high-frequency and high-speed switching applications. Therefore, wide-band-gap diodes that combine wide-band-gap semiconductors and Schottky barriers perform better than other semiconductor materials under high power, high frequency, high temperature, and high voltage conditions.

[0003] Junction barrier Schottky (JBS) / Merged PiN Schottky (MPS) diodes using silicon carbide substrates can be used in high-power rectifier circuits with voltages ranging from 1200 volts to 1700 volts, currents ranging from 20 amps to 200 amps, and powers ranging from 200 watts to 500 watts. For JBS / MPS diodes, the key performance indicators are reverse breakdown voltage, forward rated current, and forward surge current, and the ability to withstand forward surge current has been an issue that the industry has been working to improve for many years.

[0004] In the prior art, wide-band diodes mainly use plasma diffusion layer (PSL), unbalanced layout method (ULM) and package enhancement to improve the heat dissipation speed and surge current tolerance of wide-band diodes. However, the plasma diffusion layer and unbalanced layout design make the ratio of Schottky contact and ohmic contact from inside to outside uneven or have poor spatial symmetry, so there is still room for improvement in dispersing current and improving heat conduction efficiency. In addition, the method of improving heat dissipation by packaging is costly and incompatible with general packaging forms.

[0005] In view of this, the present invention provides a wide energy band diode which optimizes the use of a plasma diffusion layer and an unbalanced layout design to increase the dispersion current and improve the heat conduction efficiency, thereby improving the tolerance of the wide energy band diode to surge current. Summary of the invention

[0006] The object of the present invention is to provide a wide energy band diode and a manufacturing method thereof. In the present invention, the active area of ​​the wide energy band diode is designed as a latitude and longitude line pattern. Therefore, when a plasma spreading layer (PSL) and an unbalanced layout method (ULM) are used to improve the heat dissipation speed and surge current tolerance of the wide energy band diode, the ratio of Schottky contact to ohmic contact from the center of the active area to the outside changes more evenly and continuously, and the latitude and longitude line pattern has axial symmetry, so the spatial symmetry of the active area is better.

[0007] To achieve the above-mentioned purpose, the present invention discloses a wide energy band diode comprising a substrate, an epitaxial layer, an active area, a junction termination extension (JTE), an edge region, an oxide layer, a first metal layer, an insulating layer (SiN), a protective layer (polyimide) and a second metal layer. The substrate has a first surface and a second surface. The epitaxial layer is disposed on the first surface of the substrate. The active area is located in the epitaxial layer and has a plurality of doped areas and a plurality of undoped areas, wherein the doped areas and the undoped areas form a graticule-like pattern that is axially symmetrical. The junction termination extension area surrounds the active area and is connected to the doped areas. The edge region is located in the epitaxial layer and surrounds the active area. The oxide layer is disposed on the epitaxial layer and is etched to form an opening. The first metal layer is disposed in the opening to contact the doped area to serve as an anode of the wide energy band diode. The insulating layer is disposed on the oxide layer and the first metal layer. The protection layer covers the insulating layer. The second metal layer is arranged on the second surface of the substrate to serve as a cathode of the wide energy band diode.

[0008] In one embodiment, the longitude and latitude line pattern is one of a circle and a hexagon.

[0009] In one embodiment, the edge region includes a plurality of field limitation rings (FLRs), the field limitation rings surround the active region and the junction termination extension region, and the spacing between the field limitation rings is equal. The doping region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limitation rings have a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0010] In one embodiment, the edge region includes a plurality of field limiting rings, the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings increases in a direction away from the active region. The doped region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting rings have a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0011] In one embodiment, the active region includes at least one surge protection region, and the surge protection region is non-ion doped to increase the surge current withstand upper limit of the wide energy band diode.

[0012] In one embodiment, the substrate is made of one of silicon carbide, gallium oxide and zinc oxide.

[0013] In one embodiment, the substrate and the epitaxial layer are both N-type doped.

[0014] In one embodiment, the material of the first metal layer is one of aluminum, titanium nitride and titanium.

[0015] In one embodiment, the second metal layer is made of one of silver, nickel and titanium.

[0016] In addition, the present invention also discloses a method for manufacturing a wide energy band diode, comprising: growing an epitaxial layer on a first surface of a substrate; implanting a plurality of first ions at intervals in the epitaxial layer to form a plurality of first doped regions, wherein a plurality of first undoped regions are defined between the first doped regions, wherein the first doped regions and the first undoped regions together constitute an active region, wherein the active region is an axisymmetric longitude-latitude line pattern (Graticule-Like Pattern); injecting a plurality of second ions at intervals in the epitaxial layer to form a junction termination extension region, the junction termination extension region surrounds the active region and is connected to the first doped region; injecting a plurality of third ions at intervals in the epitaxial layer to form a plurality of second doped regions, a plurality of second undoped regions are defined between the second doped regions, the second doped regions and the second undoped regions together constitute an edge region, the edge region surrounds the junction termination extension region and the active region; depositing an oxide layer on the epitaxial layer; etching the oxide layer to form an opening; depositing a first metal layer in the opening to contact the first doped region and serve as an anode of the wide energy band diode; depositing an insulating layer on the oxide layer and the first metal layer; covering the insulating layer with a protective layer; and disposing a second metal layer on a second surface of the substrate to serve as a cathode of the wide energy band diode.

[0017] In one embodiment, the longitude and latitude line patterns are made into one of a circle and a hexagon.

[0018] In one embodiment, the edge region includes a plurality of field limiting rings (FLRs), the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings is made equal. The doping region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting rings have a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0019] In one embodiment, the edge region includes a plurality of field limitation rings, the field limitation rings surround the active region and the junction termination extension region, and the spacing between the field limitation rings is manufactured to increase in a direction away from the active region. The doped region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limitation rings have a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0020] In one embodiment, the active region includes at least one surge protection region, and the surge protection region is non-ion doped to increase the surge current withstand upper limit of the wide energy band diode.

[0021] After referring to the accompanying drawings and the embodiments described below, a person skilled in the art will be able to understand other objects of the present invention, as well as the technical means and implementation schemes of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0023] Figure 2 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0024] Figure 3 A top view of the wide energy band diode of the present invention;

[0025] Figure 4 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0026] Figure 5 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0027] Figure 6 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0028] Figure 7 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0029] Figure 8 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0030] Fig. 9 A cross-sectional view of the manufacturing process of the wide energy band diode of the present invention;

[0031] Fig.10 A top view of the wide energy band diode of the present invention;

[0032] Fig.11 A schematic diagram of a wide energy band diode on a wafer according to the present invention;

[0033] Fig.12 A schematic diagram of a wide energy band diode on a wafer according to the present invention;

[0034] Fig.13 A top view of the wide energy band diode of the present invention;

[0035] Fig.14 A top view of the wide energy band diode of the present invention;

[0036] Fig.15 A top view of the wide energy band diode of the present invention;

[0037] Fig.16 A flowchart of a method for manufacturing a wide energy band diode according to the present invention; and

[0038] Fig.17 The figure is a flow chart of the method for manufacturing a wide energy band diode of the present invention.

[0039] Description of Reference Numerals

[0040] 1000: Wide band diode

[0041] 1010: Substrate

[0042] 1011: First surface

[0043] 1013: Second surface

[0044] 1020: Epitaxial layer

[0045] 1021: First doping region

[0046] 1022: first undoped region

[0047] 1023: Junction termination extension area

[0048] 1025: Second doping region

[0049] 1026: Second undoped region

[0050] 1030: Active area

[0051] 1031: Tubo Sanctuary

[0052] 1050: Fringe

[0053] 1051: Field limiting ring

[0054] 1060: Oxide layer

[0055] 1070: First metal layer

[0056] 1080: Insulation layer

[0057] 1090: Protective layer

[0058] 1100: Second metal layer

[0059] 2000: Wafers

[0060] D1: Spacing

[0061] D2: Spacing

[0062] D3: Spacing

[0063] S1602-S1608: Steps

[0064] S1702-S1712: steps. DETAILED DESCRIPTION

[0065] The present invention will be explained below through embodiments. The embodiments of the present invention are not intended to limit the present invention to any specific environment, application or special method as described in the embodiments. Therefore, the description of the embodiments is only for the purpose of explaining the present invention, and is not intended to limit the present invention. It should be noted that in the following embodiments and drawings, elements that are not directly related to the present invention have been omitted and not shown, and the dimensional relationship between the elements in the drawings is only for easy understanding, and is not intended to limit the actual proportion.

[0066] The first embodiment of the present invention is Figures 1 to 9 The wide bandgap diode 1000 includes a substrate 1010, an epitaxial layer 1020, an active area 1030, a junction termination extension (JTE) 1023, an edge region 1050, an oxide layer 1060, a first metal layer 1070, an insulating layer 1080, a protective layer 1090 and a second metal layer 1100. The substrate 1010 has a first surface 1011 and a second surface 1013.

[0067] The present invention uses the design of the mask pattern to make the active area 1030 of the wide-band diode 1000 present an axisymmetric graticule-like pattern. The P-type doped region at the center (inside) of the active area 1030 is connected to the P-type doped region on the outside. When the surge current breaks through the PN region, the electric energy drifts outward through the P-type doped region. In addition, the use of the graticule-like pattern design can make the ohmic contact ratio of the active area gradually decrease from the inside to the outside at a certain ratio, so that the heat energy is conducted outward. Therefore, the wide-band diode 1000 of the present invention can enhance the instant dispersion effect of the surge current and the heat dissipation effect.

[0068] For more information, see Figures 1 to 9 , which respectively depict cross-sectional views of the wide energy band diode 1000 at different stages of the manufacturing process. In the process of manufacturing the wide energy band diode 1000 of the present invention, firstly, an epitaxial layer 1020 is grown on the first surface 1011 of the substrate 1010, and a plurality of first ions are implanted into the epitaxial layer 1020 at intervals to form a plurality of first doped regions 1021, and a plurality of second ions are implanted into the epitaxial layer 1020 at intervals to form a junction termination extension region 1023. A plurality of third ions are implanted into the epitaxial layer 1020 at intervals to form a plurality of second doped regions 1025, as shown in FIG. Figure 1 to Figure 2 shown.

[0069] In this embodiment, the substrate 1010 and the epitaxial layer 1020 are both N-type doped. The substrate 1010 is made of one of silicon carbide, gallium oxide and zinc oxide. The first doped regions 1021, the junction termination extension regions 1023 and the second doped regions 1025 are formed by implanting P-type ions, such as boron ions, aluminum ions, gallium ions, indium ions and other positively charged ions, into the N-type epitaxial layer through ion implantation.

[0070] Please refer to Figure 2 and Figure 3 , Figure 3A top view of the active area 1030, the junction termination extension area 1023 and the edge area 1050 is depicted. A plurality of first undoped areas 1022 are defined between these first doped areas 1021, and these first doped areas 1021 and these first undoped areas 1022 together constitute the active area 1030. These first undoped areas 1022 refer to areas where no P-type ions are implanted. In other words, these first undoped areas 1022 are the portions of the epitaxial layer 1020 that are located within the active area 1030. The active area 1030 is in an axisymmetric longitude-latitude pattern. In the present embodiment, the longitude-latitude-latitude pattern is a circle. The junction termination extension area 1023 is connected to these first doped areas 1021 and surrounds the active area 1030, and is used to enhance the insulation effect to improve the voltage withstand capability of the wide energy band diode 1000.

[0071] Similarly, please refer again to Figure 2 and Figure 3 , a plurality of second undoped regions 1026 are defined between these second doped regions 1025, and these second doped regions 1025 and these second undoped regions 1026 together constitute an edge region 1050. These second undoped regions 1026 refer to regions where no P-type ions are implanted. In other words, these second undoped regions 1026 are portions of the epitaxial layer 1020 located within the edge region 1050. The edge region 1050 surrounds the junction termination extension region 1023 and the active region 1030, and is used to limit electric field diffusion, so as to reduce the risk of electric field concentration and voltage breakdown.

[0072] An oxide layer 1060 is deposited on the epitaxial layer 1020, and the oxide layer 1060 is etched to form an opening 1610. Figure 4 and Figure 5 A first metal layer 1070 is deposited in the opening 1610 to contact the first doped regions 1021 and serve as an anode of the wide energy band diode 1000. Figure 6 The material of the first metal layer 1070 is one of aluminum, titanium nitride and titanium.

[0073] Next, an insulating layer 1080 is deposited on the oxide layer 1060 and the first metal layer 1070, and a protective layer 1090 is covered on the insulating layer 1080. Figure 7 and Figure 8 Finally, a second metal layer 1100 is disposed on a second surface 1013 of the substrate 1010 to serve as a cathode of the wide energy band diode 1000, as shown in FIG. Fig. 9 The material of the second metal layer 1100 is one of silver, nickel and titanium.

[0074] The second embodiment of the present invention is Figure 3 and Figures 10 to 12 The second embodiment is an extension of the first embodiment. Fig.10 Another embodiment of describing the warp and weft pattern. Unlike the first embodiment in which the warp and weft pattern is circular, in this embodiment, the warp and weft pattern is hexagonal. For details, please refer to Fig.11 and Fig.12 , which respectively depict the arrangement diagrams of hexagonal and circular latitude and longitude patterns on wafers. Due to the limitations of wafer cutting technology, when the latitude and longitude pattern is circular, multiple wafers on the wafer are usually cut with the smallest square around the wafer, and when the latitude and longitude pattern is polygonal, for example: Fig.10 When the hexagonal pattern is used, the so-called plasma cutting technology can be used along the edge of the wafer. Compared with the hexagonal warp-and-latitude pattern and the circular warp-and-latitude pattern, more hexagonal warp-and-latitude patterns can be placed on the same size wafer 2000. Therefore, in this embodiment, the hexagonal warp-and-latitude pattern can further reduce the manufacturing cost of the wide energy band diode 1000.

[0075] The third embodiment of the present invention is Fig.13 The third embodiment is an extension of the first embodiment and the second embodiment. In this embodiment, the edge region 1050 includes a plurality of field limiting rings (FLR) 1051, which surround the active region 1030 and the junction termination extension region 1023, and the spacing D1 between each field limiting ring 1051 is equal.

[0076] The first doping regions 1021 of the active region 1030 have a first doping concentration, the junction termination extension region 1023 has a second doping concentration, and the field limiting rings 1051 have a third doping concentration. The first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration. In other embodiments, the first doping concentration may be different from the second doping concentration, and both the first doping concentration and the second doping concentration are less than the third doping concentration.

[0077] It should be noted that Fig.13 In the figure, the latitude and longitude-like pattern is a circle for illustration. In other embodiments, the design of this embodiment can also be adopted when the latitude and longitude-like pattern is a hexagon.

[0078] The fourth embodiment of the present invention is Fig.14 The fourth embodiment is an extension of the first embodiment to the third embodiment. Different from the third embodiment in which the spacing D1 of each field limiting ring 1051 is the same, in this embodiment, the spacing between each field limiting ring 1051 increases gradually in the direction away from the active area 1030. For details, please refer to Fig.14 , the distance D2 between the two field limiting rings closer to the active region 1030 is smaller than the distance D3 between the two outer field limiting rings. Fig.14The wide-bandwidth diodes designed with a latitude-longitude pattern have a higher tolerance to surge current than those using Fig.13 Wide-band diodes designed with warp-and-latitude-like patterns.

[0079] It should be noted that Fig.14 In the figure, the latitude and longitude-like pattern is a circle for illustration. In other embodiments, the design of this embodiment can also be adopted when the latitude and longitude-like pattern is a hexagon.

[0080] In addition, it should be noted that the number of field limiting rings and the ratio of the doped region to the undoped region in the active region in the above embodiments and drawings are only used for illustration and are not intended to limit the present invention. In actual applications, the number of field limiting rings and the ratio of the doped region to the undoped region in the active region can be adjusted according to the circuit or electronic component with which the wide bandgap diode is matched.

[0081] The fifth embodiment of the present invention is Fig.15 The fifth embodiment is an extension of the third embodiment and the fourth embodiment. In this embodiment, the active region 1030 includes at least one surge protection region 1031. The surge protection region 1031 is non-ion doped, which can increase the surge current passing through, so as to increase the surge current bearing upper limit of the wide energy band diode 1000.

[0082] Please refer to the sixth embodiment of the present invention Fig.16 and Fig.17 , which is a flow chart of the method for manufacturing a wide energy band diode of the present invention. The method for manufacturing a wide energy band diode is applicable to manufacturing the wide energy band diode 1000 of the aforementioned embodiment. The method for manufacturing a wide energy band diode is performed using a variety of different semiconductor equipment, such as: deposition equipment, ion implantation machine, photolithography machine, etching equipment, cleaning equipment, sputtering machine, testing equipment and packaging equipment, but is not limited thereto.

[0083] First, in step 1602, an epitaxial layer is grown on a first surface of a substrate. In step 1604, a plurality of first ions are implanted at intervals in the epitaxial layer to form a plurality of first doped regions. In step 1606, a plurality of second ions are implanted at intervals in the epitaxial layer to form a junction termination extension region. In step 1608, a plurality of third ions are implanted at intervals in the epitaxial layer to form a plurality of second doped regions.

[0084] Next, in step 1702, an oxide layer is deposited on the epitaxial layer. In step 1704, the oxide layer is etched to form an opening. In step 1706, a first metal layer is deposited in the opening. In step 1708, an insulating layer is deposited on the oxide layer and the first metal layer. In step 1710, a protective layer is covered on the insulating layer. In step 1712, a second metal layer is disposed on a second surface of the substrate.

[0085] In one embodiment, the longitude-latitude line-like pattern is made into one of a circle and a hexagon.

[0086] In other embodiments, the edge region includes a plurality of field limiting rings. The field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings is made equal. The doped regions of the active region have a first doping concentration. The junction termination extension region has a second doping concentration. The field limiting rings have a third doping concentration. The first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0087] In other embodiments, the edge region includes a plurality of field limitation rings, which surround the active region and the junction termination extension region, and the spacing between the field limitation rings is manufactured to increase in a direction away from the active region. The doped regions of the active region have a first doping concentration. The junction termination extension region has a second doping concentration. The field limitation rings have a third doping concentration. The first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration.

[0088] In other embodiments, the active region includes at least one surge protection region, and the surge protection region is non-ion doped to increase the surge current withstand upper limit of the wide energy band diode.

[0089] In addition to the above steps, the wide bandgap diode manufacturing method of this embodiment can also perform all operations described in the above embodiments and have all corresponding functions. Ordinary technicians in the relevant technical field can directly understand how this embodiment performs these operations and has these functions based on the above embodiments, so it is not repeated.

[0090] The above embodiments are only used to illustrate the embodiments of the present invention and to explain the technical features of the present invention, and are not used to limit the protection scope of the present invention. Any changes or equivalent arrangements that can be easily completed by those skilled in the art belong to the scope claimed by the present invention, and the scope of protection of the present invention shall be subject to the attached claims.

Claims

1. A wide energy band diode, comprising: A substrate having a first surface and a second surface; An epitaxial layer grown on the first surface of the substrate; An active area is located in the epitaxial layer and has a plurality of doped areas and a plurality of undoped areas, wherein the doped areas and the undoped areas form a type of longitude and latitude line pattern that is axially symmetrical; a junction termination extension region surrounding the active region and communicating with the doped region; an edge region located in the epitaxial layer and surrounding the active region; an oxide layer, disposed on the epitaxial layer and etched to form an opening; a first metal layer disposed in the opening to contact the doped region and serve as an anode of the wide energy band diode; an insulating layer, disposed on the oxide layer and the first metal layer; a protective layer covering the insulating layer; as well as A second metal layer is disposed on the second surface of the substrate to serve as a cathode of the wide energy band diode. 2 . The wide energy band diode as claimed in claim 1 , wherein the longitude and latitude line pattern is one of a circle and a hexagon. 3 . The wide energy band diode as claimed in claim 1 , wherein the edge region comprises a plurality of field limiting rings, the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings is equal.

4. The wide bandgap diode of claim 3, wherein the doped region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting ring has a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration. 5 . The wide energy band diode as claimed in claim 1 , wherein the edge region comprises a plurality of field limiting rings, the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings increases gradually in a direction away from the active region.

6. The wide energy band diode of claim 5, wherein the doping region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting ring has a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration. 7 . The wide energy band diode as claimed in claim 1 , wherein the active region comprises at least one surge protection zone, the surge protection zone is non-ion doped, and is used to increase the surge current withstand upper limit of the wide energy band diode. 8 . The wide bandgap diode as claimed in claim 1 , wherein the substrate is made of one of silicon carbide, gallium oxide and zinc oxide. 9 . The wide energy band diode as claimed in claim 1 , wherein the substrate and the epitaxial layer are both N-type doped. 10 . The wide energy band diode as claimed in claim 1 , wherein a material of the first metal layer is one of aluminum, titanium nitride and titanium. 11 . The wide energy band diode as claimed in claim 1 , wherein a material of the second metal layer is one of silver, nickel and titanium.

12. A method for manufacturing a wide energy band diode, comprising: Growing an epitaxial layer on a first surface of a substrate; Injecting a plurality of first ions into the epitaxial layer at intervals to form a plurality of first doped regions, wherein a plurality of first undoped regions are defined between the first doped regions, wherein the first doped regions and the first undoped regions together constitute an active region, and the active region is an axisymmetric longitude and latitude line pattern; Implanting a plurality of second ions at intervals into the epitaxial layer to form a junction termination extension region, the junction termination extension region surrounding the active region and communicating with the first doped region; implanting a plurality of third ions into the epitaxial layer at intervals to form a plurality of second doped regions, a plurality of second undoped regions are defined between the second doped regions, the second doped regions and the second undoped regions together constitute an edge region, and the edge region surrounds the junction termination extension region and the active region; depositing an oxide layer on the epitaxial layer; etching the oxide layer to form an opening; Depositing a first metal layer in the opening to contact the first doped region and serve as an anode of the wide energy band diode; depositing an insulating layer on the oxide layer and the first metal layer; covering the insulating layer with a protective layer; and A second metal layer is disposed on a second surface of the substrate to serve as a cathode of the wide energy band diode. 13 . The manufacturing method as claimed in claim 12 , wherein the type of longitude and latitude line pattern is one of a circle and a hexagon. 14 . The manufacturing method according to claim 12 , wherein the edge region comprises a plurality of field limiting rings, the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings is equal.

15. The manufacturing method of claim 14, wherein the doping region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting ring has a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration. 16 . The manufacturing method according to claim 12 , wherein the edge region comprises a plurality of field limiting rings, the field limiting rings surround the active region and the junction termination extension region, and the spacing between the field limiting rings increases gradually in a direction away from the active region.

17. The manufacturing method of claim 16, wherein the doping region of the active region has a first doping concentration, the junction termination extension region has a second doping concentration, the field limiting ring has a third doping concentration, the first doping concentration is the same as the second doping concentration, and the first doping concentration is different from the third doping concentration. 18 . The manufacturing method according to claim 12 , wherein the active region comprises at least one surge protection region, the surge protection region is non-ion doped, and is used to increase the surge current withstand upper limit of the wide energy band diode.

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