Preparation method of 193nm photoresist resin

By introducing epoxy group monomers and tertiary amine synthesis technology in the synthesis of 193nm photoresist resin, the problems of insufficient etch resistance and light transmittance of the resin and high metal impurities content are solved, and the demand for high-precision lithography processes are achieved.

CN119613607AActive Publication Date: 2025-03-14JIANGSU JICUI POLYMER NEW MATERIALS CO LTD
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Patent Information

Application Number
CN202411969219.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2025-03-14
Estimated Expiration
2044-12-30

AI Technical Summary

Technical Problem

The existing 193nm photoresist resin has problems of insufficient etch resistance and light transmittance in the photolithography process. At the same time, high-precision integrated circuits have strict requirements on metal impurities content, and it is difficult for the existing technology to effectively reduce the metal impurities content.

Method used

During the resin synthesis process, the epoxy group monomer is methacrylate. Through the tertiary amine synthesis technology, the advance introduction and volatility of the amine group is avoided, ensuring that the etch resistance and light transmittance of the resin are not affected. At the same time, the epoxy reaction between the electron-grade secondary amine and the resin is not increased, and the metal ion content in the resin is not increased.

Benefits of technology

The etch resistance and light transmittance of 193nm photoresist resin has been improved, the content of metal impurities is reduced, the volatility of amine groups and oxidation and yellowing are avoided, and the requirements of high-precision photolithography process are met.

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Abstract

The invention discloses a preparation method of 193nm photoresist resin. The preparation method comprises the following steps: synthesizing resin to obtain a synthetic resin solution, wherein monomers synthesized during synthesis comprise the following raw materials in molar percentage: 99.9-99.99% of an anti-etching methacrylate monomer and 0.01-0.1% of a methacrylate monomer with epoxy; removing impurities and unreacted monomers in the synthetic resin solution to obtain a No.1 resin solution; removing metal impurities in the first resin solution to obtain a second resin solution; replacing a solvent in the second resin solution with an electronic-grade solvent to obtain a third resin solution; a resin solution containing electronic grade secondary and tertiary amine groups is added into the third resin solution, and the molar weight of an electronic grade secondary amine compound is 95-100% of the molar weight of epoxy groups in the methacrylate monomer with epoxy. The epoxy group monomer introduced in the resin synthesis process is methacrylate, the basic structure, the etching resistance, the light transmission and the like of the resin cannot be influenced, and due to the fact that the tertiary amine group is synthesized on the resin, the tertiary amine group cannot be volatilized during later use.
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Citation Information

Patent Citations

  • Positive photosensitive resist composition and method for preparing the same

    JP2006003861A

  • Positive photosensitive resin composition and method of forming cured film from the same

    WO2009119878A1

  • Modified film-forming resin containing acid inhibitor, preparation method therefor, and photoresist composition

    WO2021169344A1