Magnetic nano multi-ring memory device and preparation method and application thereof

Abstract

The invention provides a magnetic nano multi-ring memory device and a preparation method and application thereof. The magnetic nano multi-ring memory device comprises a substrate; a cell attached to the substrate; wherein each unit is composed of a plurality of nanoring of which the ring edges are overlapped or connected in a contact manner. Due to the fact that the ring edge overlapping type device has large exchange coupling strength, a hysteresis loop of the ring edge overlapping type device shows a three-step magnetization overturning process and a complex magnetic domain state. Hysteresis loops of the ring edge contact connection type device all show two-step magnetization overturning behaviors, and the magnetic domain state of a second platform on the hysteresis loops is a vortex state. The chirality of the ring edge overlapping type and ring edge contact connection type multi-nanoring magnetic structure is controllable. The method for regulating and controlling the chirality of the magnetic nanoring is provided, and a new means is provided for storage of an artificial magnetic nanostructure.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic devices, and in particular to a magnetic nano multi-ring storage device and a preparation method and application thereof. Background Art

[0002] The vortex state of the magnetic nanoring device is a special magnetic domain configuration, which is characterized by closed magnetic flux and low stray field. In this state, the magnetic domains are distributed 360° along the nanoring, so that the internal magnetic field can effectively offset the magnetic interference of the external environment. These characteristics make the vortex state show great advantages in the design and manufacture of magnetic random access memory, magnetic sensors and magnetic switching devices. For example, a vortex state magnetic storage unit with a nano-unit structure disclosed in Chinese patent CN 104575583A can maintain a stable vortex state at a smaller size, and can complete rapid magnetization reversal under field regulation. A magnetic field sensor using the giant magnetoresistance effect of a ferromagnetic nanoring disclosed in Chinese patent CN 101363903B detects changes in the external magnetic field by using the huge change in resistance of the ferromagnetic nanoring under the action of an external magnetic field. The sensitivity at the magnetic field transition point can reach 2%-10% / Oe or higher.

[0003] In the reading and writing process of magnetic random access memory devices, the storage unit of data can be defined as "0" and "1" respectively by the different chirality of the vortex state. However, the initial chirality of a single nanoring device is often unpredictable, which directly affects the accurate recording and reading of data. Therefore, achieving precise control of the chirality of nanoring devices has become an extremely critical and difficult task. Summary of the invention

[0004] The present invention provides a magnetic nano multi-ring storage device and a preparation method and application thereof, so as to provide more stable new modulated magnetic domain states and provide more options for encoding and decoding of magnetic recording writing.

[0005] This specification discloses a magnetic nano multi-ring storage device, comprising:

[0006] substrate;

[0007] a unit attached to the substrate;

[0008] The unit is composed of a plurality of nano-rings whose edges are overlapped or connected in contact with each other.

[0009] In this specification, the material of the substrate is an insulating material.

[0010] In this specification, the nano-ring is made of a soft magnetic material film.

[0011] In this specification, the outer diameter of the nanoring is d, the ring width is w, and the thickness is t, wherein w=d / 4, d∈(100nm, 1.5μm), and t∈(20nm, 80nm).

[0012] In the present specification, the arrangement of multiple nanorings is as follows: with one nanoring as the center, nanorings are added outward along the horizontal and vertical axis directions of the ring surface; when there are three nanorings, the lines connecting the centers of the three nanorings form a right triangle, and the two right-angled sides are respectively along the horizontal and vertical directions; when there are four nanorings, the outermost edges of the lines connecting the centers of the four nanorings form an isosceles triangle, in which the centers of the three nanorings are on the same straight line, and the straight line is along the horizontal or vertical axis direction; when there are five nanorings, the outermost edges of the lines connecting the centers of the five nanorings form a square, and the diagonals of the square are respectively along the horizontal and vertical axis directions, and the intersection of the diagonals is the center of the central nanoring.

[0013] In this specification, the overlapping of the edges of multiple nanorings means that the rings overlap each other at their joints, the outer diameter of one ring is tangent to the inner diameter of another ring, and the distance between two adjacent ring centers is the difference between the outer diameter of the nanoring and the ring width of the nanoring.

[0014] In this specification, the ring edges of multiple nanorings are in contact and connected as follows: the distance between two adjacent ring centers is l, l∈(the difference between the outer diameter of the nanoring and the ring width of the nanoring, the outer diameter of the nanoring).

[0015] This specification also discloses a method for preparing a magnetic nano multi-ring storage device, comprising:

[0016] Using one of deep ultraviolet lithography technology, extreme ultraviolet exposure technology, electron beam exposure technology, and nanoimprint technology to form a desired template on the substrate material;

[0017] A nano-ring structure is formed on a template by using one of magnetron sputtering technology, electron beam evaporation technology, molecular beam epitaxy technology and pulsed laser deposition technology to prepare any one of the above-mentioned magnetic nano multi-ring storage devices.

[0018] In this specification, the substrate material is any one of a silicon wafer, a silicon oxide wafer, an ITO glass substrate, a FTO glass substrate, a K9 glass substrate, a quartz glass substrate, a sapphire single crystal wafer, and a gallium arsenide substrate.

[0019] This specification also discloses an application of a magnetic nano multi-ring storage device, and uses any of the above-mentioned magnetic nano multi-ring storage devices to prepare magnetic random access memory, magnetic nano switch devices, magnetic spin devices, and magnetic sensors.

[0020] This manual can at least achieve the following beneficial effects:

[0021] Since the ring-edge overlap device has a large exchange coupling strength, its hysteresis loop shows a three-step magnetization reversal process and a complex magnetic domain state; the hysteresis loop of the ring-edge contact connection device shows a two-step magnetization reversal behavior, and the magnetic domain state of the second platform on its hysteresis loop is a vortex state; the chirality of the ring-edge overlap type and the ring-edge contact connection type multi-nano ring magnetic structure is controllable. The magnetic nano multi-ring storage device of the present invention provides a method for regulating the chirality of the magnetic nano ring, and provides a new means for artificial magnetic nano structure storage. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0023] Figure 1a Schematic diagrams of the ring-edge overlapping magnetic nano multi-ring storage device involved in the present invention, from left to right are schematic diagrams of 3 nano-rings, 4 nano-rings, and 5 nano-rings.

[0024] Figure 1b Schematic diagrams of the ring-edge contact connection type magnetic nano multi-ring memory device involved in the present invention, from left to right are schematic diagrams of 3 nano-rings, 4 nano-rings, and 5 nano-rings.

[0025] Figure 2a It is a hysteresis loop of the magnetic nano multi-ring memory device of three nano rings with overlapping ring edges involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0026] Figure 2b It is a hysteresis loop of the magnetic nano multi-ring memory device of the ring edge overlapping type of four nano rings involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0027] Figure 2c It is a hysteresis loop of the magnetic nano multi-ring memory device of the ring edge overlapping type with 5 nano rings involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0028] Figure 3a It is a hysteresis loop of the magnetic nano multi-ring memory device of the ring edge contact connection type of three nano rings involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0029] Figure 3bIt is a hysteresis loop of the magnetic nano multi-ring memory device of the ring edge contact connection type of four nano rings involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0030] Figure 3c It is a hysteresis loop of the magnetic nano multi-ring memory device of the ring edge contact connection type with 5 nano rings involved in the present invention, as well as a magnetic domain state diagram and a micromagnetic simulation diagram at the corresponding step.

[0031] Figure 4 The figure is a schematic diagram of a signal writing circuit of a reading and writing device using the magnetic nano multi-ring memory device involved in the present invention.

[0032] Figure 5 The figure is a schematic diagram of a signal readout circuit of a read-write device using the magnetic nano multi-ring memory device involved in the present invention. DETAILED DESCRIPTION

[0033] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the embodiments of the present invention. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0034] The disclosure below provides many different embodiments or examples to implement different structures of the embodiments of the present invention. In order to simplify the disclosure of the embodiments of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the embodiments of the present invention. In addition, the embodiments of the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0035] The embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] The technical ideas of the present invention are as follows:

[0037] In the reports of magnetic structures composed of two rings, both types of double rings with strong exchange coupling in physical contact showed complex three-step magnetization reversal and formed a vortex state. The chirality of the two ring vortices that make up the double ring structure is correlated, but the stability of the intermediate magnetic domain state is poor and not suitable for application; for the double ring structure without physical contact, the magnetization reversal process shows a two-step reversal similar to that of a single ring, with a stable vortex state, but its chirality cannot be controlled. In addition, in the reports of double ring arrays, it was found that the nucleation of vortex states, twisted states, onion states, and new magnetic domain states named heart-shaped states are all related to the thickness of the structure and the distance between the double rings. It can be inferred that the physical contact between the rings will significantly increase the exchange coupling strength, thereby changing the magnetization reversal process, and ultimately having a profound impact on the generation, stability, and chirality of the vortex state. Therefore, adjusting the number and geometric configuration of nanorings that form physical contact to achieve the chirality of the vortex state has become a new idea for the development of magnetic nanoring devices, but there are not many studies in this area.

[0038] On the other hand, if the magnetic nanorings have more stable magnetic domain states, more options can be obtained based on the definition of binary. For example, in the overlapping nanorings, during the magnetization reversal process, the intermediate stable state formed is a vortex state with the same chirality, and there is a domain wall in the overlapping area of ​​the two rings. Such an intermediate state is different from the pure vortex state and the onion state. It is a new type of stable magnetic domain state, which provides more diverse options for the read and write compilation of magnetic random access memory. Therefore, it is very important to study the magnetic interaction between nanorings to obtain more stable magnetic domain states and realize the regulation of the chirality of magnetic nanorings for applications such as magnetic nano-switching devices or magnetic storage devices, which will obtain more flexible and rich switching information or read and write information compilation.

[0039] Therefore, if Figure 1a and Figure 1b As shown, this specification discloses a magnetic nano multi-ring memory device, comprising:

[0040] substrate;

[0041] a unit attached to the substrate;

[0042] The unit is composed of a plurality of nano-rings whose edges are overlapped or connected in contact with each other.

[0043] In this specification, the material of the substrate is an insulating material.

[0044] In this specification, the nano-ring is made of a soft magnetic material film.

[0045] In this specification, the outer diameter of the nanoring is d, the ring width is w, and the thickness is t, wherein w=d / 4, d∈(100nm, 1.5μm), and t∈(20nm, 80nm).

[0046] In some embodiments, the arrangement of multiple nanorings is as follows: with one nanoring as the center, nanorings are added outward along the horizontal and vertical axis directions of the ring surface; when there are three nanorings, the lines connecting the centers of the three nanorings form a right triangle, and the two right-angled sides are respectively along the horizontal and vertical directions; when there are four nanorings, the outermost edges of the lines connecting the centers of the four nanorings form an isosceles triangle, in which the centers of the three nanorings are on the same straight line, and the straight line is along the horizontal or vertical axis direction; when there are five nanorings, the outermost edges of the lines connecting the centers of the five nanorings form a square, and the diagonals of the square are respectively along the horizontal and vertical axis directions, and the intersection of the diagonals is the center of the central nanoring.

[0047] In some embodiments, the ring edges of multiple nanorings overlap as follows: the rings overlap at their joints, the outer diameter of one ring is tangent to the inner diameter of another ring, and the distance between two adjacent ring centers is the difference between the outer diameter of the nanoring and the ring width of the nanoring (dw);

[0048] The ring edges of multiple nanorings are in contact and connected as follows: the distance between two adjacent ring centers is l, l∈(the difference between the outer diameter of the nanoring and the ring width of the nanoring (dw), the outer diameter of the nanoring d).

[0049] This specification also discloses a method for preparing a magnetic nano multi-ring storage device, comprising:

[0050] Using one of deep ultraviolet lithography technology, extreme ultraviolet exposure technology, electron beam exposure technology, and nanoimprint technology to form a desired template on the substrate material;

[0051] A nano-ring structure is formed on a template by using one of magnetron sputtering technology, electron beam evaporation technology, molecular beam epitaxy technology and pulsed laser deposition technology to prepare any one of the above-mentioned magnetic nano multi-ring storage devices.

[0052] In some embodiments, the substrate material is any one of a silicon wafer, an oxidized silicon wafer, an ITO glass substrate, a FTO glass substrate, a K9 glass substrate, a quartz glass substrate, a sapphire single crystal wafer, and a gallium arsenide substrate.

[0053] In some embodiments, the material of the nano-ring structure is a soft magnetic material (soft magnetic material film). 80 Fe 20 , CoFeB and Co2FeAl.

[0054] This specification also discloses an application of a magnetic nano multi-ring storage device, and uses any of the above-mentioned magnetic nano multi-ring storage devices to prepare magnetic random access memory, magnetic nano switch devices, magnetic spin devices, and magnetic sensors.

[0055] In a specific embodiment, the preparation process of the magnetic nano multi-ring memory device is as follows:

[0056] Cut the silicon wafer into 20×10mm 2 Size (Main parameters of silicon wafer: P type, resistivity: <0.0015>, crystal orientation: <100> , thickness: 500μm), clean the silicon wafer and put it in a baking oven, bake it at 150℃ for 30 minutes, then put it on a glue spreader, use a pipette to extract an appropriate amount of deep ultraviolet photoresist, drip it all over the silicon wafer (950K PMMA positive photoresist, model AR-P679), spin the glue at 5000 rpm for 60 seconds, remove the silicon wafer, put it in a baking oven, bake it at 100℃ for 45 seconds and then take it out. Put the glued silicon wafer into a maskless far ultraviolet exposure machine with a wavelength of 248 nanometers, and the exposure dose is 25mJ / cm 2 , the designed magnetic nano-multi-ring pattern was exposed on the silicon wafer using a positive photoresist process. After the silicon wafer was taken out, it was placed in a developer for 50 seconds, and then placed in a fixer for 50 seconds. After being cleaned with deionized water, the surface of the silicon wafer was blown dry with nitrogen, and the nano-ring array pattern was observed under a microscope with a magnification adjusted to 100 times. The silicon wafer with a nano-ring array and a clear pattern was placed in a magnetron sputtering instrument, and the Ar gas pressure was set to 5mTorr and the high vacuum was set to 5×10 -8 Torr, Ni sputtering on silicon wafer 80 Fe 20 (50) (nanometer) film, and then covered with 5 nanometers of Au as a protective layer. Take out the silicon wafer from the magnetron sputtering instrument, soak it in OK73 solution for 25 minutes, then put it in ultrasound for a few seconds to observe until the photoresist is completely removed, wash it with deionized water, and blow it dry with nitrogen to obtain the corresponding device. The preparation example of the present invention prepared six types of devices, including three ring edge overlap type devices (see attached Figure 1a ) and three edge-contact devices (see Appendix Figure 1b ). All device structures are composed of the same single nanoring, with the dimensions of a single nanoring being: outer diameter d is 1200nm, ring width w is 300nm, and thickness t is 50nm. The combination of nanorings is a device with overlapping ring edges, such as Figure 1aAs shown: (i) Ring-edge overlapping three-ring device: the outer diameter of one ring is in contact with the inner diameter of the second ring, the length in the x-direction is 2100nm, the width in the y-direction is 2100nm, and the thickness in the z-direction is 50nm; (ii) Ring-edge overlapping four-ring device: the combination of the rings in contact with each other is similar to the overlapping three-ring device, the length in the x-direction is 3000nm, the width in the y-direction is 2100nm, and the thickness in the z-direction is 50nm; (iii) Ring-edge overlapping five-ring device: the combination of the rings in contact with each other is similar to the overlapping three-ring device, the length in the x-direction is 3000nm, the width in the y-direction is 3000nm, and the thickness in the z-direction is 50nm. Figure 1b The combination of nano-rings is a ring-edge contact connection type device, and the distance l between the two adjacent ring centers of the ring-edge contact connection nano-rings is 1100nm. (iv) Ring-edge contact connection three-ring device: 2300nm long in the x-direction, 2300nm wide in the y-direction, and 50nm thick in the z-direction; (v) Ring-edge contact connection four-ring device: 3400nm long in the x-direction, 2300nm wide in the y-direction, and 50nm thick in the z-direction; (vi) Ring-edge contact connection five-ring device: 3400nm long in the x-direction, 3400nm wide in the y-direction, and 50nm thick in the z-direction.

[0057] The six typical magnetic nano-ring storage devices of the present invention were tested using a micro-focus magneto-optical Kerr effect instrument to obtain the corresponding hysteresis loops of each device, and the magnetic domains at the hysteresis loop flipping point were observed using a magnetic force microscope. Micro-magnetic simulations were also performed on the devices, and the results are shown in Figure 2a to Figure 2c and Figure 3a to Figure 3c .

[0058] In the ring-edge overlapping multi-ring device, since the strong exchange coupling dominates the magnetization reversal process, the hysteresis loop shows a three-step reversal, that is, there are two stable intermediate states. This is inconsistent with the two transitions of the positive onion state-vortex state-anti-onion state magnetic domains of a single nanoring device, indicating that new magnetic states may appear during the reversal process, which is very important for applications such as magnetic random access memory, magnetic nano-switch devices, magnetic spin devices, and magnetic sensors. Figure 2a As shown in the figure, when the external magnetic field is 0Oe, the top nanoring forms a 360° vortex state rotating clockwise along the direction of the external field, and the two bottom rings show vortex states with opposite chirality and domain walls in the overlapping area; when the external field increases to -150Oe (the first intermediate state in the hysteresis loop), the upper and lower rings on the same side show opposite chirality and domain walls appear in the overlapping area, and the lower ring on the right turns into an onion state; when the external field is further increased to -450Oe (the second intermediate state in the hysteresis loop), all three rings show a twisted onion state. Figure 2bAs shown in the figure, as the external magnetic field increases, the top ring of the device with four overlapping rings maintains a 360° clockwise vortex state, the two rings on the bottom sides show vortex states of opposite chirality (0Oe), and the middle ring is always in a twisted state; the left ring below shows the transition from the onion state (the first intermediate state) to the counterclockwise vortex state (the second intermediate state). Figure 2c As shown, the ring edge overlapping five-ring device increases with the external magnetic field, and the upper and lower two rings keep the vortex state of opposite chirality, the ring on the left is onion state, the right ring shows the transition of vortex state (0Oe)-onion state (first intermediate state)-onion state (second intermediate state), and the middle ring shows the transition of twisted state (0Oe)-onion state (first intermediate state)-twisted state (second intermediate state). The above experimental detection and theoretical simulation results prove that the ring edge overlapping type magnetic nano multi-ring device of the present invention has a novel magnetic domain structure. As a comparison, in the ring edge overlapping double ring device under the same conditions as the present embodiment (single nano ring has the same ring thickness and ring width), its second intermediate state is unstable, this is because the difference of the two intermediate magnetic domain states in the double ring device is not big, just the domain wall has a small movement in the overlapping area, and the two intermediate states of the ring edge overlapping multi-ring device of the present invention have shown different novel magnetic domain states, so it is more stable. In the read and write process of magnetic random access memory device, the unit of storage can be defined as "0" and "1" respectively by the difference of vortex state chirality. For the device of the present invention, the new stable magnetic state at the step of the hysteresis loop can provide more flexible and rich switching information or read-write information compilation for the further application of the magnetic nanodevice.

[0059] The interaction of the ring-edge contact-connected multi-ring device is weaker than that of the ring-edge overlapped multi-ring device, so the hysteresis loop shows a two-step flip, that is, there is only one stable intermediate state, which is similar to the two transitions of the positive onion state-vortex state-anti-onion state magnetic domains of a single nanoring device. Figure 3a As shown, the stable intermediate state of the three-ring device connected by ring-edge contact is three vortex states, in which the chirality of the upper and lower rings on the same side is opposite, and the chirality of the lower two rings is the same; Figure 3b The stable intermediate state of the four-ring device connected by the ring edge contact is that the three outermost rings are all in the counterclockwise vortex state with the same chirality, and the middle ring is in the onion state. Figure 3c In the ring-edge contact-connected five-ring device, the four outermost rings are all in vortex state, the three upper rings are of the same counterclockwise chirality, the lowermost ring is clockwise chirality, and the middle ring is in onion state. The above experimental detection and theoretical simulation results prove that the ring-edge contact-connected magnetic nano multi-ring devices of the present invention also have a new magnetic domain structure.

[0060] In addition, the vortex state chirality of the device of the present invention is controllable. In all the ring edge overlapping type multi-ring devices in the present embodiment, the nano-ring at the top (perpendicular to the external field application direction) keeps a 360° vortex state rotating clockwise, which further illustrates that the chirality of the multi-ring is determined by its configuration. In the ring edge overlapping four-ring device, the rightmost nano-ring along the external field application direction keeps a counterclockwise vortex state; In the ring edge overlapping five-ring device, the two nano-rings at the top (clockwise rotation) and the bottom (counterclockwise rotation) (perpendicular to the external field application direction) show vortex states with opposite chirality. In all the ring edge contact connection type multi-ring devices in the present embodiment, the control of the intermediate state vortex chirality is more obvious: all the top rings in the three devices show a counterclockwise vortex state along the applied external field direction, and the nano-rings arranged in the vertical direction and showing the vortex state have opposite vortex chirality; the nano-rings arranged in the horizontal direction and being the vortex state have the same vortex chirality. This is because the magnetic field is applied along the x-direction, and the exchange coupling in the horizontal direction is stronger than the exchange coupling in the vertical direction. Compared with the prior art, in a single-ring device with the same ring thickness and ring width as the single nanoring in the device of this embodiment, the chirality of the vortex state is unpredictable. The two different configurations of the magnetic nano multi-ring devices of the present invention can significantly control and adjust the chiral characteristics of the vortex state, which not only improves the flexibility and efficiency of magnetic nano devices in information storage and data processing, but also directly affects the improvement of storage density and the reduction of energy consumption, and promotes the development of magnetic storage technology.

[0061] In a specific embodiment, the application process of the magnetic nano multi-ring memory device is as follows:

[0062] Figure 4 and Figure 5 They are schematic diagrams of the structure of the circuit of the embodiment of the ring-edge overlapping three-ring device for the reading and writing device. 80 Fe 20 The device is then covered with 2nm of MgO, 3nm of CoFeB is evaporated on the MgO, and finally covered with 3nm of Ta as a protective layer, making the three-ring device with overlapping edges a magnetic storage unit. Figure 4 It is the signal writing circuit, and the current is passed ( Figure 4 After the I is written in, the current passes through the ring edge overlapping three-ring storage device, and the signal is written. It is required that the input current does not destroy the magnetization state of the CoFeB layer. After the current passes through the bit line and word line, the bias signal in the readout line is 0, and the access transistor channel is closed. Therefore, the N i can be determined by changing the synchronous magnetic field size. 80 Fe 20 The direction of the vortex state rotation of the layer defines the write signal "0" and "1". If Ni 80 Fe 20The rotation directions of the layer vortex state and the CoFeB layer vortex state are consistent, and the signal is "1", otherwise, the signal is "0". Figure 5 The embodiment is a signal readout circuit, when the signal is written into the ring edge overlapping three-ring storage device, by adding a read voltage ( Figure 5 V read) to the bit line to read the signal, and at the same time, a selection voltage ( Figure 5 In this case, when Ni is selected, the access transistor channel is turned on, so the current flowing through the bit line can be detected by the sense amplifier. 80 Fe 20 The layer vortex state and the CoFeB layer vortex state rotate in opposite directions and are in a high resistance state. 80 Fe 20 The rotation direction of the layer vortex state and the CoFeB layer vortex state is consistent with the low resistance state, and the record of one byte is determined by the detected current value. Compared with the prior art, when the device of the present invention is used as a magnetic random access memory, its encoding code has more compilable options. In addition, the magnetic nano multi-ring device of the present invention can control and adjust the chiral characteristics of the vortex state, further improving the flexibility and efficiency of the magnetic nano device in information storage and data processing.

[0063] The above-described embodiments are used to illustrate the present invention, not to limit the present invention, so changes in the exemplified values ​​or replacement of equivalent elements should still fall within the scope of the present invention.

[0064] From the above detailed description, it can be understood by those skilled in the art that the present invention can indeed achieve the aforementioned objectives and is in compliance with the provisions of the Patent Law.

[0065] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they are aware of the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention. The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be pointed out that any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

[0066] It should be noted that the above description of the relevant process is only for example and explanation, and does not limit the scope of application of this specification. For those skilled in the art, various modifications and changes can be made to the process under the guidance of this specification. However, these modifications and changes are still within the scope of this specification.

[0067] The basic concepts have been described above. Obviously, for those of ordinary skill in the art who have read this application, the above invention disclosure is only for example and does not constitute a limitation of this application. Although not explicitly stated here, those of ordinary skill in the art may make various modifications, improvements and amendments to this application. Such modifications, improvements and amendments are suggested in this application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of this application.

[0068] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0069] In addition, it will be understood by those skilled in the art that various aspects of the present application may be illustrated and described by a number of patentable categories or situations, including any new and useful process, machine, product or combination of substances, or any new and useful improvement thereof. Therefore, various aspects of the present application may be implemented entirely by hardware, entirely by software (including firmware, resident software, microcode, etc.), or by a combination of hardware and software. The above hardware or software may be referred to as "units", "modules" or "systems".

[0070] In addition, unless explicitly stated in the claims, the order of the processing elements and sequences described in this application, the use of alphanumeric characters, or the use of other names are not intended to limit the order of the processes and methods of this application. Although the above disclosure discusses some invention embodiments that are currently considered useful through various examples, it should be understood that such details are only for illustrative purposes, and the attached claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that are consistent with the essence and scope of the embodiments of this application.

[0071] Similarly, it should be noted that in order to simplify the description disclosed in this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of the application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this method of the application should not be interpreted as reflecting the intention that the claimed object requires more features than those explicitly stated in each claim. On the contrary, the subject of the invention should have fewer features than the above single embodiment.

Claims

1. A magnetic nano-multi-ring storage device, characterized in that: include: substrate; a unit attached to the substrate; The unit is composed of a plurality of nano-rings whose edges are overlapped or connected in contact with each other.

2. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The substrate is made of insulating material.

3. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The nano ring is made of a soft magnetic material film.

4. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The outer diameter of the nano ring is d, the ring width is w, and the thickness is t, wherein w=d / 4, d∈(100nm, 1.5μm), and t∈(20nm, 80nm).

5. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The arrangement of multiple nanorings is as follows: with one nanoring as the center, nanorings are added outward along the horizontal and vertical axis directions of the ring surface; when there are three nanorings, the lines connecting the centers of the three nanorings form a right triangle, and the two right-angled sides are respectively along the horizontal and vertical directions; when there are four nanorings, the outermost edges of the lines connecting the centers of the four nanorings form an isosceles triangle, in which the centers of the three nanorings are on the same straight line, and the straight line is along the horizontal or vertical axis direction; when there are five nanorings, the outermost edges of the lines connecting the centers of the five nanorings form a square, and the diagonals of the square are respectively along the horizontal and vertical axis directions, and the intersection of the diagonals is the center of the central nanoring.

6. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The ring edges of multiple nanorings overlap as follows: the rings overlap at their joints, the outer diameter of one ring is tangent to the inner diameter of another ring, and the distance between two adjacent ring centers is the difference between the outer diameter of the nanoring and the ring width of the nanoring.

7. The magnetic nano-poly-ring memory device according to claim 1, characterized in that: The ring edges of multiple nanorings are in contact and connected as follows: the distance between two adjacent ring centers is l, l∈(the difference between the outer diameter of the nanoring and the ring width of the nanoring, the outer diameter of the nanoring).

8. A method for preparing a magnetic nano-multi-ring memory device, characterized in that: include: Using one of deep ultraviolet lithography technology, extreme ultraviolet exposure technology, electron beam exposure technology, and nanoimprint technology to form a desired template on the substrate material; A nano-ring structure is formed on a template by using one of magnetron sputtering technology, electron beam evaporation technology, molecular beam epitaxy technology, and pulsed laser deposition technology to prepare the magnetic nano multi-ring storage device according to any one of claims 1 to 7.

9. The method for preparing a magnetic nano-poly-ring memory device according to claim 8, characterized in that: The substrate material is any one of a silicon wafer, an oxidized silicon wafer, an ITO glass substrate, an FTO glass substrate, a K9 glass substrate, a quartz glass substrate, a sapphire single crystal wafer, and a gallium arsenide substrate.

10. An application of a magnetic nano-multi-ring storage device, characterized in that: The magnetic nano multi-ring memory device described in any one of claims 1 to 7 is used to prepare a magnetic random access memory, a magnetic nano switch device, a magnetic spin device, and a magnetic sensor.

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