Manufacturing method of display panel

Abstract

The invention provides a manufacturing method of a display panel. The manufacturing method comprises the following steps: providing a bearing substrate; forming a plurality of connecting layers on the bearing substrate; providing a plurality of micro light-emitting chips, wherein each micro light-emitting chip is provided with a first surface, a second surface and a peripheral side surface; operating the bearing substrate, and bonding the connecting layer to the corresponding second surface, so that the first surface is positioned on one side, far away from the bearing substrate, of the micro light-emitting chip; forming a forming structure on the micro light-emitting chip, so that the forming structure extends and is distributed to the peripheral side surface and the first surface of the micro light-emitting chip along the side wall of the connecting layer; providing a circuit substrate; operating the bearing substrate, and bonding the micro light-emitting chip to the circuit substrate; at least one part of the connecting layer is removed, so that the miniature light-emitting chip is separated from the bearing substrate. According to the manufacturing method of the display panel, the light emitting directivity, the light transmittance (or light transmittance) of the display panel or the yield of products can be improved, or a large amount of cost can be saved.

Description

[0001] Related divisional applications

[0002] This invention is a divisional application of the invention patent application with application number 202111357628.3 filed on November 16, 2021 and invention name “Display panel and manufacturing method thereof”. Technical Field

[0003] The present invention relates to a display panel and a manufacturing method thereof, and in particular to a display panel capable of improving light directivity or light penetration and a manufacturing method thereof. Background Art

[0004] At present, in the manufacturing process of micro-light emitting diode (microLED) display panels, after the micro-light emitting diodes are transferred to the circuit substrate, a light shielding layer (such as a black matrix) is separately made to cover the circuit substrate and shield the gaps between each sub-pixel, thereby preventing the light emitted by each sub-pixel from interfering with each other. However, since this light shielding layer is made on the panel, special attention should be paid to high temperature and circuit protection issues, which makes this process more difficult. In addition, since the above-mentioned separately made light shielding layer will completely cover the gaps between the sub-pixels, the light transmittance of the display panel is poor.

[0005] Based on the needs of the display screen, the light shielding layer needs to produce a patterned light-transmitting area corresponding to the light-emitting area of ​​the sub-pixel. However, since the light shielding layer is made of non-light-transmitting material, when the thickness of the light shielding layer is thick, the yellow light process (photolithography) will not be able to smoothly expose the bottom of the light shielding layer, resulting in the thickness of the light shielding layer being limited by the process. Summary of the invention

[0006] The present invention is directed to a display panel and a manufacturing method thereof, which can improve the directivity of light output, improve the light penetration (or light transmittance) of the display panel, improve the yield of the product or save a lot of costs.

[0007] According to an embodiment of the present invention, a display panel includes a circuit substrate and a plurality of micro-light emitting diode structures. The plurality of micro-light emitting diode structures respectively include a micro-light emitting chip and a forming structure. The micro-light emitting chip is electrically bonded to the circuit substrate. The micro-light emitting chip includes a first surface, a second surface, and a peripheral surface. The first surface is located on a side of the micro-light emitting chip facing the circuit substrate. The second surface is arranged relative to the first surface. The peripheral surface connects the first surface and the second surface. The forming structure surrounds the peripheral surface of the micro-light emitting chip and surrounds the second surface. The forming structure extends in a direction away from the circuit substrate and forms an inner side wall. The inner side wall and the second surface constitute a receiving portion.

[0008] In the display panel according to the embodiment of the present invention, the above-mentioned forming structure extends from the peripheral side surface of the micro light emitting chip to the first surface.

[0009] In the display panel according to the embodiment of the present invention, each of the micro light emitting chips further comprises at least one electrode. The at least one electrode is disposed on the first surface and exposed outside the forming structure, and is electrically connected to the circuit substrate.

[0010] In the display panel according to the embodiment of the present invention, a gap is provided between the above-mentioned forming structure and the circuit substrate.

[0011] In the display panel according to the embodiment of the present invention, the second surface of each micro-light emitting chip is divided into a central part and a peripheral part. The peripheral part is covered by the forming structure. The ratio of the area of ​​the central part to the area of ​​the second surface is greater than or equal to 0.7.

[0012] In the display panel according to the embodiment of the present invention, an included angle is formed between the inner side wall and the second surface, and the included angle is between 90 degrees and 150 degrees.

[0013] In the display panel according to the embodiment of the present invention, the above-mentioned forming structure has an end portion, and the distance between the end portion and the second surface is between 3 micrometers and 10 micrometers.

[0014] In the display panel according to the embodiment of the present invention, the above-mentioned forming structure has an end portion, and the cross-sectional area of ​​the receiving portion gradually increases from the second surface toward the end portion.

[0015] In the display panel according to the embodiment of the present invention, the circuit substrate has an exposed area. The exposed area is located between the orthographic projections of any two adjacent micro-LED structures on the circuit substrate. The exposed area does not overlap the orthographic projection of the forming structure on the circuit substrate.

[0016] In the display panel according to the embodiment of the present invention, the above-mentioned forming structure is made of non-light-transmitting material.

[0017] In the display panel according to the embodiment of the present invention, each of the above-mentioned micro-light emitting chips further comprises a light guide layer. The light guide layer is arranged on the second surface.

[0018] According to an embodiment of the present invention, a method for manufacturing a display panel includes the following steps. A carrier substrate is provided. A plurality of connection layers are formed on the carrier substrate. A plurality of micro-light-emitting chips are provided, wherein each micro-light-emitting chip has a first surface, a second surface opposite to the first surface, and a peripheral surface connecting the first surface and the second surface. The carrier substrate is operated, and the plurality of connection layers are bonded to the corresponding second surface, so that the first surface is located on the side of the micro-light-emitting chip away from the carrier substrate. Forming structures are respectively formed on each micro-light-emitting chip, so that each forming structure extends along the side wall of each connection layer and is distributed to the peripheral surface and the first surface of each micro-light-emitting chip. A circuit substrate is provided. The carrier substrate is operated, and each micro-light-emitting chip is bonded to the circuit substrate. At least a portion of each connection layer is removed to separate the plurality of micro-light-emitting chips from the carrier substrate. Wherein, each forming structure surrounds the second surface of each micro-light-emitting chip and forms a receiving portion with the second surface.

[0019] In the manufacturing method of the display panel according to the embodiment of the present invention, the step of forming a plurality of connection layers on the carrier substrate further includes: connecting the plurality of connection layers to each other to form a protective layer on the carrier substrate. The protective layer is located between the plurality of forming structures and the carrier substrate.

[0020] In the manufacturing method of the display panel according to the embodiment of the present invention, the above-mentioned forming structure covers the first surface, and the above-mentioned manufacturing method further includes: removing part of the forming structure on the first surface to expose at least one electrode of each micro light-emitting chip.

[0021] In the manufacturing method of the display panel according to the embodiment of the present invention, the manufacturing method further comprises: performing a patterning step to remove part of the formed structure according to the exposure pattern. The orthographic projection of the exposure pattern on the carrier substrate does not overlap with the orthographic projection of the plurality of micro-LED structures on the carrier substrate.

[0022] In the method for manufacturing a display panel according to an embodiment of the present invention, in the step of forming a plurality of connection layers on the carrier substrate, the plurality of connection layers are in the shape of rectangular columns, truncated cones or trapezoidal columns.

[0023] In the method for manufacturing a display panel according to an embodiment of the present invention, in the step of forming a plurality of connection layers on the carrier substrate, the cross-sectional areas of the plurality of connection layers gradually decrease in a direction away from the carrier substrate.

[0024] In the method for manufacturing a display panel according to an embodiment of the present invention, in the step of removing each connection layer, the method further includes: retaining a portion of the connection layer on the second surface.

[0025] Based on the above, in the display panel and the manufacturing method thereof of one embodiment of the present invention, since the forming structure can extend and be distributed on the peripheral side surface and the first surface of the micro-light-emitting chip, it is possible to avoid mutual interference between the light emitted by two adjacent micro-light-emitting chips, and the light emission directivity can be improved. Furthermore, compared with the production steps that are generally unable to produce a thicker forming structure due to the limitation of the yellow light process, the manufacturing method of the display panel of this embodiment can easily adjust or produce a thicker forming structure as required by changing the height of the connecting layer. In addition, since the step of forming the forming structure can be performed on the carrier substrate (temporary substrate), it is not necessary to perform complex and difficult processes such as high temperature and circuit protection on the circuit substrate in the subsequent process, thereby greatly improving the yield of the product.

[0026] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention.

[0028] Figures 1A to 1F A cross-sectional schematic diagram showing a method for manufacturing a display panel according to an embodiment of the present invention;

[0029] Figure 2A A cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention;

[0030] Figure 2B A cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention;

[0031] Figure 3 A cross-sectional schematic diagram showing a display panel according to another embodiment of the present invention;

[0032] FIG. 4A to FIG. 4B A cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention;

[0033] Figure 5 FIG. 4 is a cross-sectional schematic diagram of a display panel according to another embodiment of the present invention.

[0034] Description of Figure Numbers

[0035] 100, 100a, 100b, 100c, 100d: display panel;

[0036] 101: Micro light emitting diode structure;

[0037] 110: carrier substrate;

[0038] 120, 120b: connection layer;

[0039] 121: upper surface;

[0040] 123: side wall;

[0041] 125: protective layer;

[0042] 130: Micro light-emitting chip;

[0043] 131: first surface;

[0044] 132: second surface;

[0045] 1321: center part;

[0046] 1322: peripheral part;

[0047] 133: circumferential surface;

[0048] 134: electrode;

[0049] 140, 140a, 140b: forming structure;

[0050] 141: medial wall;

[0051] 143: end;

[0052] 150: Circuit board;

[0053] 150a: first area;

[0054] 150b: Second area;

[0055] 150c: exposed area;

[0056] 151: pad;

[0057] 160: Exposure graphics;

[0058] 180: light guide layer;

[0059] A1, A2: area;

[0060] C1, C2: accommodating part;

[0061] D1: distance;

[0062] G1, G2: gap;

[0063] θ: angle. DETAILED DESCRIPTION

[0064] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0065] Figures 1A to 1F FIG. 1 is a cross-sectional schematic diagram of a method for manufacturing a display panel according to an embodiment of the present invention. The method for manufacturing a display panel 100 according to this embodiment includes the following steps:

[0066] Please refer to Figure 1A First, a carrier substrate 110 is provided. The carrier substrate 110 is a temporary substrate such as a plastic substrate, a glass substrate or a sapphire substrate, but is not limited thereto.

[0067] Next, a plurality of connection layers 120 are formed on the carrier substrate 110. Each connection layer 120 has an upper surface 121 and a side wall 123 connected to the upper surface 121. In the present embodiment, the material of the connection layer 120 may be a light-transmitting material. The material of the connection layer 120 may be, for example, polydimethylsiloxane (PDMS) or SU-8 polymer, etc., but is not limited thereto. In the present embodiment, the shape of the connection layer 120 is substantially a rectangular column, but is not limited thereto. In some embodiments, the shape of the connection layer 120 may also be a truncated cone (not shown) or a trapezoidal column (such as Figure 4A , Figure 4B shown).

[0068] Then, please refer to Figure 1B , providing a plurality of micro-light-emitting chips 130. The micro-light-emitting chip 130 is, for example, a micro-light-emitting diode (micro LED, mLED / μLED) or an organic light-emitting diode (organic light-emitting diode, OLED), but is not limited thereto. Each micro-light-emitting chip 130 has a first surface 131, a second surface 132 opposite to the first surface 131, and a peripheral surface 133 connecting the first surface 131 and the second surface 132. Each micro-light-emitting chip 130 includes at least one electrode 134 ( Figure 1B The schematic diagram shows two electrodes (for example) and an insulating layer 135. The insulating layer 135 is disposed on the first surface 131 of the micro-light-emitting chip 130 and exposes a portion of the first surface 131. The electrode 134 is disposed on the first surface 131 of the micro-light-emitting chip 130 and is disposed on the portion of the first surface 131 exposed by the insulating layer 135.

[0069] Next, a plurality of micro-light emitting chips 130 are bonded to each connection layer 120. It is additionally noted that although Figure 1BThe second surface 132 of the micro-light emitting chip 130 and the upper surface 121 of the connecting layer 120 shown in the figure have the same width (or area), but in other embodiments (eg Figure 3 ), the second surface 132 and the upper surface 121 may have different sizes.

[0070] The above-mentioned bonding process can be performed by pressing the micro-light emitting chips 130 in opposite directions, for example, fixing the multiple micro-light emitting chips 130 on another substrate and pressing the multiple connection layers 120 on the carrier substrate 110. Alternatively, the carrier substrate 110 can be operated, and the upper surfaces 121 of the multiple connection layers 120 can be bonded to the second surfaces 132 of the corresponding micro-light emitting chips 130, but the present invention is not limited thereto. At this time, the first surface 131 of the micro-light emitting chip 130 is located on the side of the micro-light emitting chip 130 away from the carrier substrate 110.

[0071] like Figure 1C As shown, a molding structure 140 is then formed on each micro light emitting chip 130 , so that the molding structure 140 can extend along the sidewall 123 of each connection layer 120 to the peripheral side surface 133 and the first surface 131 of each micro light emitting chip 130 .

[0072] In the present embodiment, the forming structure 140 may be formed, for example, by coating, but is not limited thereto. In the present embodiment, the material of the forming structure 140 may be a non-light-transmitting material or a light-shielding material to reduce the problem of light interference between two adjacent micro-light-emitting chips (i.e., each micro-light-emitting chip 130) and improve the light-emitting directivity. The material of the forming structure 140 may be, for example, a black photoresist (e.g., containing carbon black), a white photoresist (e.g., containing titanium dioxide), or a gray photoresist (e.g., containing a certain proportion of carbon black and titanium dioxide), but is not limited thereto. Among them, when the color of the forming structure 140 is darker, the light absorption effect of the forming structure 140 is stronger and the contrast is higher; conversely, when the color of the forming structure 140 is lighter, the forming structure 140 is easier to reflect light and has a higher brightness. In some embodiments, the material of the forming structure 140 may be, for example, resin, epoxy resin, polymethyl methacrylate (PMMA), polysiloxane or polyimide (PI), but is not limited thereto. In some embodiments, the material of the forming structure 140 may also be filled with metal particles to form a mixture to increase the reflective effect.

[0073] like Figure 1DAs shown, a portion of the forming structure 140 on the first surface 131 of the micro-light-emitting chip 130 is removed to expose the electrode 134 of each micro-light-emitting chip 130. At the same time, a portion of the material at the connection between two adjacent forming structures 140 is also removed to form a gap G1. Here, the forming structure 140 is formed on each micro-light-emitting chip 130 and covers it, and the forming structure 140 and these micro-light-emitting chips 130 constitute a micro-light-emitting diode structure 101. In this embodiment, a portion of the forming structure 140 can be removed, for example, by photolithography, but is not limited thereto. At this time, the electrode 134 of each micro-light-emitting chip 130 can be exposed outside the forming structure 140.

[0074] Please refer to Figure 1E After the above steps are completed, a circuit substrate 150 is provided. The circuit substrate 150 includes a plurality of pads 151 and a driving circuit (not shown), and the driving circuit can be electrically connected to the pads 151 .

[0075] Next, the micro-light emitting chip 130 transfer step is performed: the carrier substrate 110 is operated, and the electrodes 134 of each micro-light emitting chip 130 are bonded to the circuit substrate 150 through the pads 151. At this time, the electrodes 134 of each micro-light emitting chip 130 may contact the pads 151 and be electrically connected to the circuit substrate 150 through the pads 151. In this embodiment, there is a gap G2 between the forming structure 140 and the circuit substrate 150.

[0076] Then, please refer to Figure 1F , remove at least a portion of the material at the interface between each connection layer 120 and the carrier substrate 110, so that the plurality of micro-light-emitting chips 130 can be separated from the carrier substrate 110. Further, the remaining connection layer 120 is removed to expose the second surface 132 of each micro-light-emitting chip 130 and the inner sidewall 141 of the forming structure 140. In the present embodiment, the connection layer 120 can be removed by laser lift-off (LLO), isotropic etching or anisotropic etching, for example, but not limited thereto. At this time, the forming structure 140 surrounds the second surface 132 of each micro-light-emitting chip 130, and the forming structure 140 extends in a direction away from the circuit substrate 150. The inner sidewall 141 of the forming structure 140 can form a receiving portion C1 with the second surface 132. In the present embodiment, the receiving portion C1 can be an air cavity, so as to be used to fill the color conversion material (such as quantum dots) and / or micro lenses in the subsequent process, but not limited thereto.

[0077] In the present embodiment, since the forming structure 140 can extend and be distributed on the side wall 123 of the connecting layer 120, the peripheral surface 133 of the micro light-emitting chip 130, and the first surface 131 of the micro light-emitting chip 130, it is possible to avoid light interference (crosstalk) between two adjacent micro light-emitting chips 130 and improve the directivity of light emission (for example, emitting light in a direction away from the first surface 131).

[0078] In the present embodiment, the forming structure 140 has an end 143. In the normal direction of the circuit substrate 150, there is a distance D1 between the end 143 and the second surface 132 of the micro-light-emitting chip 130, and the distance D1 can be regarded as the depth of the accommodation portion C1. As can be seen from the above description, since the distance D1 is determined by the height of the connecting layer 120, that is, the forming structure 140 is not formed by the yellow light lithography process; therefore, by changing the height of the connecting layer 120, the distance D1 and / or the thickness of the forming structure 140 can be easily adjusted. Therefore, compared with the production steps of the forming structure with a thicker thickness (i.e., a deeper accommodation portion) that cannot be produced due to the limitation of the yellow light process, the manufacturing method of the display panel 100 of the present embodiment is not limited by this process to meet the needs of different products. In the present embodiment, the distance D1 can be, for example, between 3 micrometers (μm) and 10 micrometers, but is not limited thereto.

[0079] In the present embodiment, the circuit substrate 150 may have a first region 150a, a second region 150b, and an exposed region 150c. In the normal direction of the circuit substrate 150, the orthographic projection of the micro-light emitting chip 130 on the circuit substrate 150 may substantially overlap with the first region 150a. The orthographic projection of a portion of the forming structure 140 on the circuit substrate 150 may substantially overlap with the second region 150b. The exposed region 150c is located between the orthographic projections of any two adjacent micro-light emitting diode structures 101 on the circuit substrate 150. In addition, the exposed region 150c does not overlap with the orthographic projection of the micro-light emitting chip 130 on the circuit substrate 150, nor does it overlap with the orthographic projection of the forming structure 140 on the circuit substrate 150. In the present embodiment, since the exposed region 150c of the circuit substrate 150 is not shielded by the forming structure 140, the exposed region 150c can improve the light transmittance of the display panel 100 (e.g., the light-transmissive circuit substrate 150) of the present embodiment.

[0080] It should be noted that, compared to a display panel in which a forming structure is generally produced after the micro-light-emitting chip is transferred to a circuit substrate, the manufacturing method of the display panel 100 of the present embodiment forms a forming structure 140 on a carrier substrate 110 (temporary substrate). Therefore, in subsequent processes, the circuit substrate 150 does not need to be subjected to high temperature or other complex and difficult processes, thereby greatly improving the yield of the product and omitting some circuit protection steps.

[0081] In addition, since bonding the micro-light-emitting chip 130 is one of the main methods for mass transfer of micro-light-emitting diodes, in the manufacturing method of the display panel 100 of the present embodiment, the connection layer 120 is essentially a transfer unit in the transfer process. In other words, the present embodiment provides the conditions for forming the shape of the light-shielding layer through the transfer unit in the original process. Further, after the forming structure 140 is formed, removing the connection layer 120 is also a necessary step in the transfer process, so the accommodating portion C1 is also naturally formed during the above-mentioned removal process. Therefore, since the manufacturing method of the display panel 100 of the present embodiment is further implemented on the basis of the existing mass transfer process, there is no need to add a large number of complicated processes, and the production cost of the light-shielding layer can be significantly reduced.

[0082] Other embodiments will be listed below for illustration. It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the previous embodiments, and the following embodiments will not be repeated.

[0083] Figure 2A FIG. 4 is a cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention. Figure 2B FIG. 1 is a cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention. Figures 1A to 1F as well as Figure 2A , Figure 2B The display panel 100a of this embodiment is Figures 1A to 1F The display panel 100a in the embodiment is similar to the display panel 100, and the main difference is that: in the manufacturing method of the display panel 100a of the present embodiment, it also includes: connecting multiple connecting layers 120 to each other to form a protective layer 125 on the supporting substrate 110; and performing a patterning step to remove part of the forming structure 140a according to the exposure pattern 160.

[0084] For more details, please also refer to Figure 1A and Figure 2A In this embodiment, when forming Figure 1AWhen a plurality of connection layers 120 are formed on the carrier substrate 110, a protective layer 125 can be formed on the carrier substrate 110 and between the plurality of connection layers 120 at the same time, so that the plurality of connection layers 120 can be connected to each other through the protective layer 125, and the protective layer 125 can be located between the plurality of forming structures 140a and the carrier substrate 110. Then, when the forming structure 140a is subsequently formed, the forming structure 140a can cover the protective layer 125. Therefore, when the connection layer 120 and the carrier substrate 110 are separated by a laser lift-off process, the protective layer 125 can be used to protect the end 143 of the forming structure 140a, so that the depth (i.e., the distance D1) of the accommodation portion C1 formed subsequently is easier to control. In some embodiments, the protective layer 125 can be integrally formed with the connection layer 120.

[0085] Next, please refer to Figure 2B After forming a plurality of connection layers 120 and a protective layer 125 on the carrier substrate 110, and then forming a forming structure 140a covering the micro light-emitting chip 130, the connection layer 120 and the protective layer 125, the forming structure 140a to be removed is defined by an exposure pattern 160. The orthographic projection of the exposure pattern 160 on the carrier substrate 110 does not overlap with the orthographic projection of the plurality of micro light-emitting diode structures 101 on the carrier substrate 110.

[0086] like Figure 2B As shown, a patterning step is performed according to the exposure pattern 160 to remove part of the forming structure 140a, and these removed parts correspond to the gaps G1 between each micro-light-emitting chip 130. The gap G1 can expose the protective layer 125 below; or, since the protective layer 125 does not need to be retained in the subsequent transfer process, the patterning step here can allow part or all of the protective layer 125 below the forming structure 140a to be removed (not shown in the figure).

[0087] Figure 3 FIG. 2 is a cross-sectional schematic diagram of a display panel according to another embodiment of the present invention. Figure 1F and Figure 3 The display panel 100b of this embodiment is Figure 1F The display panel 100b of the embodiment is similar to the display panel 100 in the embodiment, but the main difference between the two is that in the display panel 100b of the embodiment, the second surface 132 of each micro light emitting chip 130 can be divided into a central portion 1321 and a peripheral portion 1322.

[0088] Specifically, please match Figure 2A Reference Figure 3In the manufacturing process of the display panel 100b of the present embodiment, since the width (or area) of the upper surface of the connection layer (not shown) is smaller than the width (or area) of the second surface 132 of the micro light-emitting chip 130, when the second surface 132 of the micro light-emitting chip 130 is bonded to the connection layer, the central portion 1321 of the second surface 132 covers the connection layer, and the peripheral portion 1322 of the second surface 132 is exposed.

[0089] Next, since the forming structure 140 can contact and cover the peripheral portion 1322 exposed by the connection layer during the process of forming the forming structure 140, after removing the connection layer, the central portion 1321 of the second surface 132 can be exposed by the forming structure 140, and the peripheral portion 1322 can still be covered by the forming structure 140. The ratio of the area A1 of the central portion 1321 to the area A2 of the second surface 132 can be, for example, greater than or equal to 0.7 and less than 1 (i.e., 0.7≦A1 / A2<1), but is not limited thereto.

[0090] In other words, the width (or area) of the central portion 1321 of the second surface 132 of the micro light-emitting chip 130 may be substantially equal to the width (or area) of the upper surface of the connecting layer, and the width (or area) of the central portion 1321 may be controlled by the width (or area) of the upper surface of the connecting layer.

[0091] In this embodiment, the outer portion 1322 of the second surface 132 of the micro-light emitting chip 130 may be covered by the forming structure 140, and the central portion 1321 may be exposed by the forming structure 140. Therefore, by controlling the size of the light emitting area (i.e., the central portion 1321), the micro-light emitting chip 130 may achieve the effect of concentrated light emission.

[0092] FIG. 4A to FIG. 4B FIG. 1 is a cross-sectional schematic diagram showing a method for manufacturing a display panel according to another embodiment of the present invention. Figures 1A to 1F as well as FIG. 4A to FIG. 4B The display panel 100c of this embodiment is Figures 1A to 1F The display panel 100 in the embodiment is similar to the display panel 100 in the embodiment, but the main difference between the two is that in the manufacturing method of the display panel 100c of the present embodiment, the shape of the connection layer 120b is substantially a trapezoidal column, and the second surface 132 also has an exposed central portion 1321 and a peripheral portion 1322 covered by the forming structure 140b. For details, please refer to Figure 4A In the present embodiment, in the step of forming a plurality of connection layers 120 b on the carrier substrate 110 , the cross-sectional area of ​​the connection layers 120 b gradually decreases in a direction away from the carrier substrate 110 .

[0093] Then, similar to Figure 1B and Figure 1C The steps include providing a plurality of micro light-emitting chips 130, bonding a plurality of connection layers 120 b to the second surfaces 132 of the corresponding micro light-emitting chips 130, forming a forming structure 140 b on the plurality of micro light-emitting chips 130, removing a portion of the forming structure 140 b on the first surface 131, providing a circuit substrate 150, and bonding each micro light-emitting chip 130 to the circuit substrate 150.

[0094] Then, please refer to Figure 4B , remove the plurality of connection layers 120b, so that the plurality of micro-light-emitting chips 130 can be separated from the carrier substrate 110, and expose the second surface 132 of each micro-light-emitting chip 130 and the inner sidewall 141 of the forming structure 140b. There is an angle θ between the inner sidewall 141 and the second surface 132, and the angle θ is, for example, between 90 degrees and 150 degrees, but is not limited thereto. In addition, in the present embodiment, since the cross-sectional area of ​​the accommodating portion C2 can gradually increase from the second surface 132 toward the end portion 143, the accommodating portion C2 can provide more space, so that more color conversion materials and / or micro lenses can be filled in the subsequent process.

[0095] In addition, in other embodiments, the connection layer 120b may also be in different shapes. Figure 1F The receiving portion C1 is formed by the rectangular columnar connection layer 120. However, the present invention is not limited thereto, and the connection layer 120b may also be in other shapes (such as but not limited to a truncated cone shape) according to different light type requirements, so as to change the light emitting area or shape of the central portion 1321 of the second surface 132.

[0096] By using the aforementioned connection layer 120b and the forming structure 140, the present embodiment can control the light emitting angle and area of ​​the micro-light emitting chip 130 to achieve the function of the light shielding layer. In addition, compared with the existing light shielding layer structure which is only arranged on the light emitting side of the micro-light emitting diode, the forming structure 140 of the present embodiment is further extended and distributed on the peripheral surface 133 and the first surface 131 of the micro-light emitting chip 130. Therefore, in conjunction with the inner side wall 141 of the forming structure 140, it can be ensured that the light emitted by the micro-light emitting chip 130 is only emitted from the top (i.e., the second surface 132), thereby eliminating the problem of lateral light leakage and having a better concentrated light emitting effect.

[0097] Figure 5 FIG. 2 is a cross-sectional schematic diagram of a display panel according to another embodiment of the present invention. Figure 1F and Figure 5 The display panel 100d of this embodiment is Figure 1F The display panel 100 in the embodiment is similar to the display panel 100 in the embodiment, but the main difference between the two is that in the display panel 100d of the present embodiment, each micro light-emitting chip 130 further includes a light guide layer 180.

[0098] Specifically, please refer to Figure 5 In this embodiment, the light guide layer 180 is disposed on the second surface 132 of each micro-light emitting chip 130. The light guide layer 180 may be, for example, a part of a connection layer (not shown). In detail, in the manufacturing method of the display panel 100d of this embodiment, when removing the connection layer, the connection layer may not be completely removed, and a part of the connection layer may be retained on the second surface 132, so that the part of the connection layer is used as the light guide layer 180.

[0099] In summary, in a display panel and a manufacturing method thereof according to an embodiment of the present invention, since the forming structure can extend and distribute on the peripheral side surface and the first surface of the micro-light-emitting chip, the problem of mutual interference between the light output of two adjacent micro-light-emitting chips can be avoided, and the light output directivity can be improved. Next, since the forming structure will not shield the exposed area of ​​the circuit substrate, and can expose the exposed area of ​​the circuit substrate, the light penetration (or transmittance) of the display panel of this embodiment can be improved. Furthermore, compared with the manufacturing steps of the forming structure with a thicker thickness that cannot be produced due to the limitation of the yellow light process, the manufacturing method of the display panel of this embodiment can easily adjust or produce a thicker forming structure according to the needs by changing the height of the connecting layer, so that the accommodating part of the forming structure has better applicability (for example, but not limited to being used to fill quantum dot materials and / or refractive components). In addition, since the step of forming the forming structure can be performed on the carrier substrate (temporary substrate), it is not necessary to perform complex and difficult processes such as high temperature and circuit protection on the circuit substrate in the subsequent process, thereby greatly improving the yield of the product.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for manufacturing a display panel, characterized in that: include: providing a carrier substrate; forming a plurality of connection layers on the carrier substrate; Providing a plurality of micro light-emitting chips, each of the plurality of micro light-emitting chips having a first surface, a second surface opposite to the first surface, and a peripheral side surface connecting the first surface and the second surface; Operating the carrier substrate, and bonding the plurality of connection layers to the corresponding second surfaces, so that the first surfaces are located on a side of the plurality of micro-light-emitting chips away from the carrier substrate; Forming a forming structure on each of the plurality of micro light-emitting chips, so that the forming structure extends along the sidewalls of each of the plurality of connection layers to the peripheral side surface and the first surface of each of the plurality of micro light-emitting chips, and forms a plurality of micro light-emitting diode structures; Providing a circuit substrate; Operating the carrier substrate and bonding each of the plurality of micro light-emitting chips to the circuit substrate; as well as Removing at least a portion of each of the plurality of connection layers to separate the plurality of micro-light-emitting chips from the carrier substrate; The forming structure surrounds the second surface of each of the plurality of micro-light-emitting chips and forms a receiving portion with the second surface.

2. The method for manufacturing a display panel according to claim 1, wherein: The step of forming the plurality of connection layers on the carrier substrate also includes: connecting the plurality of connection layers to each other to form a protection layer on the carrier substrate, and the protection layer is located between the forming structure and the carrier substrate.

3. The method for manufacturing a display panel according to claim 1, wherein: Also includes: A portion of the forming structure on the first surface is removed to expose at least one electrode of each of the plurality of micro light-emitting chips.

4. The method for manufacturing a display panel according to claim 1, wherein: Also includes: A patterning step is performed to remove a portion of the formed structure according to an exposure pattern, wherein an orthographic projection of the exposure pattern on the carrier substrate does not overlap with an orthographic projection of the plurality of micro-LED structures on the carrier substrate.

5. The method for manufacturing a display panel according to claim 1, wherein: In the step of forming the plurality of connection layers on the carrier substrate, the plurality of connection layers are in the shape of rectangular columns, truncated cones or trapezoidal columns.

6. The method for manufacturing a display panel according to claim 1, wherein: In the step of forming the plurality of connection layers on the carrier substrate, the cross-sectional areas of the plurality of connection layers gradually decrease in a direction away from the carrier substrate.

7. The method for manufacturing a display panel according to claim 1, wherein: The step of removing each of the plurality of connection layers further includes: retaining a portion of the connection layer on the second surface.

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